TWI419219B - 基板處理裝置及基板處理方法 - Google Patents

基板處理裝置及基板處理方法 Download PDF

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TWI419219B
TWI419219B TW097126238A TW97126238A TWI419219B TW I419219 B TWI419219 B TW I419219B TW 097126238 A TW097126238 A TW 097126238A TW 97126238 A TW97126238 A TW 97126238A TW I419219 B TWI419219 B TW I419219B
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Taiwan
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substrate
processing
liquid
treatment
processing liquid
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TW097126238A
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TW200849369A (en
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Seiji Katsuoka
Masahiko Sekimoto
Toshio Yokoyama
Teruyuki Watanabe
Takahiro Ogawa
Kenichi Kobayashi
Mitsuru Miyazaki
Yasuyuki Motoshiima
Akira Owatari
Naoki Dai
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Ebara Corp
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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Claims (14)

  1. 一種基板處理裝置，係具有：儲存處理液之處理槽；基板保持裝置，係以被處理面朝下的狀態保持基板；及基板保持裝置驅動部，該基板保持裝置驅動部係在使前述基板保持裝置所保持之基板的被處理面傾斜的狀態下接觸前述處理液以進行處理；其中，前述基板保持裝置驅動部在使前述基板保持裝置所保持之前述基板傾斜的狀態下接觸處理液之後回復水平狀態以進行前述被處理面的處理；且，利用前述處理液所進行之基板被處理面的處理，係使用前處理液的電鍍前處理、或使用電鍍液的電鍍處理。
  2. 如申請專利範圍第1項之基板處理裝置，其中，在前述基板保持裝置驅動部設置可在0至100%的範圍內調整接觸於前述基板之被處理面的接液領域調節部。
  3. 如申請專利範圍第1項之基板處理裝置，其中，設有吸引部，在基板傾斜於處理液狀態下與處理液接觸時，該吸引部可吸引並強制排除滯留於基板之被處理面與處理液之間的空氣。
  4. 如申請專利範圍第1項之基板處理裝置，其中，設有處理液供給部，其可沿著接觸前述處理液之基板被處理面的傾斜，形成由深側至淺側之處理液之流動。
  5. 如申請專利第1項之基板處理裝置，其中，在保持基板保持裝置的底面的基板之部分的外周，設置有在基板接觸處理液時用以使滯留於基板下面的空氣排出的逸退溝。
  6. 一種基板處理方法，其特徵為：以被處理面朝下的狀態保持基板；及在使基板之被處理面傾斜的狀態下接觸處理液之後使前述基板回復水平狀態以處理前述被處理面；其中，利用前述處理液所進行之基板被處理面的處理，係使用前處理液的電鍍前處理、或使用電鍍液的電鍍處理。
  7. 如申請專利範圍第6項之基板處理方法，其中，係使前述基板傾斜並進行旋轉，使基板之被處理面的一部分得以接觸處理液以進行接液處理。
  8. 如申請專利範圍第6項之基板處理方法，其中，在使基板傾斜並接觸處理液時係藉由吸引方式強制排除滯留於基板之被處理面與處理液之間的空氣。
  9. 如申請專利範圍第6項之基板處理方法，其中，係沿著浸漬於前述處理液之被處理面的傾斜，形成由深側至淺側之處理液的流動，以去除基板之被處理面上的氣泡。
  10. 一種基板處理裝置，係具有：儲存處理液之處理槽；保持基板之基板保持裝置；及進行接液處理之基板保持裝置驅動部，該基板保持 裝置驅動部係在前述基板保持裝置所保持之基板的被處理面處於傾斜的狀態下使基板接觸前述處理液，之後再使其回復水平狀態，且設有吸引部，在基板傾斜並接觸處理液後回復為水平狀態時，可吸引滯留於基板被處理面與處理液間之空氣並將其強制排出，其中，利用前述處理液所進行之基板被處理面的處理，係電鍍前處理。
  11. 一種基板處理裝置，係具有：儲存處理液之處理槽；以被處理面朝下的狀態保持基板之基板保持裝置；及基板保持裝置驅動部，該基板保持裝置驅動部可在前述基板保持裝置所保持之基板的被處理面處於傾斜狀態下與前述處理液接觸，再回復到水平狀態後進行接液處理，設有處理液供給部，可在使基板傾斜於處理液之狀態下使基板接觸前述處理液後再回復水平狀態時，沿著基板之被處理面的傾斜形成由深側至淺側之處理液之流動，其中，利用前述處理液所進行之基板被處理面的處理，係電鍍前處理。
  12. 一種基板處理裝置，係具有：儲存處理液之處理槽； 保持基板之基板保持裝置；及基板保持裝置驅動部，該基板保持裝置驅動部可在前述基板保持裝置所保持之基板的被處理面處於傾斜狀態下與前述處理液接觸再回復到水平狀態後進行接液處理，在保持基板保持裝置之底面之基板的部分的外周設有逸退溝，該逸退溝係在基板呈傾斜狀態並接觸處理液後回復到水平狀態時，用以使滯留於基板之被處理面與處理液間之空氣得以排出，其中，利用前述處理液所進行之基板被處理面的處理，係電鍍前處理。
  13. 一種基板處理方法，係可使基板在傾斜的狀態下接觸處理液後再回復水平狀態以進行處理的基板處理方法，當基板處於傾斜狀態下與處理液接觸後再回復水平狀態時，可藉由吸附而強制排出滯留於基板的被處理面與處理液之間的空氣，其中，利用前述處理液所進行之基板被處理面的處理，係電鍍前處理。
  14. 一種基板處理方法，係可使基板在傾斜的狀態下接觸處理液後再回復水平狀態以進行處理的基板處理方法，以被處理面朝下的狀態保持基板，當基板於傾斜狀態下與處理液接觸後再回復水平狀態時，可沿著基板之被處理面的傾斜而形成由深側至淺側之處理液之流動，以去除基板之被處理面上的氣泡 其中，利用前述處理液所進行之基板被處理面的處理，係電鍍前處理。
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