TW201306326A - 具有小型光學之高功率發光器包裝 - Google Patents

具有小型光學之高功率發光器包裝 Download PDF

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TW201306326A
TW201306326A TW101138314A TW101138314A TW201306326A TW 201306326 A TW201306326 A TW 201306326A TW 101138314 A TW101138314 A TW 101138314A TW 101138314 A TW101138314 A TW 101138314A TW 201306326 A TW201306326 A TW 201306326A
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light source
seal
illuminator
light
heat sink
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James Ibbetson
Bernd Keller
Jayesh Bharathan
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Cree Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2924/1204Optical Diode
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements

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Abstract

本發明提供一種發光器,其包含一平坦支撐表面、一安置於散熱器(spreader)區域上的光源及一安置於該散熱器區域上以圍繞該光源的密封物。除了受到對該平坦支撐表面之黏著力約束的部分之外,該密封物能夠回應溫度變化而膨脹及收縮,以使得由不同組份之間的熱膨脹係數差異導致的力最小化。可將一個或多個反射元件安置在光源附近以提高發光器之發光效率。該等反射元件可包含散熱器區域上的反射層及/或密封物之一部分上的反射層。

Description

具有小型光學之高功率發光器包裝
本發明係關於發光器,且更明確地說,係關於具有配置成可經受熱應力之組件的發光器包裝。
本申請案主張2003年4月30日申請之美國臨時專利案第60/467,193號之權利。
發光器係一種重要的將電能轉換成光的固態裝置。一種此發光器為發光二極體(LED),其通常包含夾於兩個反向摻雜的區域之間的半導電材料主動區域。當將一偏壓施加於摻雜區域上時,電子洞及電子被注入主動區域中並於此處重新結合而產生光。光可自該主動區域發射並穿過LED表面。
LED通常視其功率額定值(power rating)而分成若干等級。儘管對於不同等級沒有標準範圍,但是低功率LED通常具有0.1瓦特至0.3瓦特(或更低)範圍內的功率額定值,而高功率LED通常具有0.5瓦特至1.0瓦特(或更高)範圍內的額定值。
低功率LED之習知包裝通常包含一反射杯,其中LED安裝於該反射杯底部。將陰極及陽極引線電耦接至該LED以提供功率。陰極引線可延伸穿過該反射杯而陽極引線可經導線結合(wire bonded)。反射杯的主要功能在於將所發射的光重新定向為特定方向,從而控制LED之遠場強度場型(far-field intensity pattern)。該反射杯可包含一高反射表 面光潔度並可受平板衝壓或以諸如鋁(Al)或銀(Ag)的金屬電鍍。
整個結構可包裝於一透明、堅硬的密封物(諸如塑膠或環氧樹脂)中。該密封物具有衆多功能。其一功能在於為LED晶片提供真空密封(hermetic seal)。其另一功能在於:光於密封物/空氣介面處折射,以使得密封物之外形可充當一透鏡以進一步控制LED之強度場型。
然而,此包裝配置之一缺點在於:LED晶片、反射杯及密封物各自通常具有不同的熱膨脹係數(CTE)。因此,在運作之加熱循環期間其以不同比率膨脹及收縮,此將對裝置造成高機械應力。詳言之,通常用於密封物的環氧樹脂及聚矽氧具有與金屬或陶瓷之CTE完全不同的CTE。CTE失配亦可由製造流程(諸如環氧樹脂固化過程)所強加之約束加劇。另外,此等包裝由於缺少良好的熱性能而不能有效地自LED晶片耗散熱。然而,由於該LED以低功率運作,所以其生成之熱的量相對較低,以使得CTE的差異不會導致不能接受的失效率(failure rate)。
然而,高功率LED通常更大、使用更大的包裝組件並產生更高熱量。因此,CTE失配對可靠性具有更大的影響,且若使用低功率LED類型之包裝,則該等包裝組件之CTE差異可導致不能接受的失效率。最普遍的失效之一為密封物的斷裂或破裂。
高功率LED包裝已被介紹為具有一充當剩餘組件之堅硬平臺的散熱器(heat spreader),且係由具有高導熱性 (thermal conductivity)之材料(諸如金屬或陶瓷)製成,此材料有助於將LED晶片中的熱量輻射出去。一反射杯安裝於該平臺上,而LED晶片安置於杯的底部。LED晶片與堅硬平臺上的導線結合接觸。反射杯、LED晶片及導線結合包裝於一提供環境保護的光學透明材料中。為了補償包裝組件之熱膨脹係數(CTE)差異,該光學透明材料可包含如聚矽氧的軟凝膠。隨著不同組件在熱循環過程中膨脹及收縮,軟凝膠易變形並補償不同的CTE。
然而,軟凝膠不如塑膠、環氧樹脂及玻璃堅固,且在沒有塗層或覆蓋層作為真空密封的情況下不能用於某些惡劣環境中,而此會增加LED製造過程的複雜性。軟凝膠傾向於吸收水,此可縮短LED使用受命。亦更難於設計軟凝膠之形狀以控制LED包裝之發射場型。
已介紹利用堅硬環氧樹脂密封物的其他高功率LED包裝,而此種裝置未於密封物內利用一反射杯。相反,於散熱器上包含一第二區域,該第二區域之一區經衝壓、模塑或蝕刻以形成一可塗覆有反射材料的凹陷(depression)。LED晶片隨後置放於凹陷底部並與其接觸。堅硬的環氧樹脂或聚矽氧填充該凹陷,從而覆蓋LED及所有導線結合。此配置會減少(但不能消除)環氧樹脂或聚矽氧密封物的斷裂及破裂。此配置亦可遇到另一問題,即環氧樹脂或聚矽氧密封物於LED熱循環過程中分層並自凹陷表面剝落。
Carey等人的第6,274,924號美國專利揭示另一高功率LED包裝,其包含***一***式模塑引線框中的散熱棒 (heat sinking slug)。散熱棒可包含一反射杯,而LED晶片及熱傳導基座架(submount)配置於該杯底部。金屬引線與散熱棒電絕緣及熱隔離。藉由安裝一熱塑性透鏡至該散熱棒上來添加一光學透鏡。該透鏡可模塑成在LED與該透鏡內表面之間為軟密封物留出空間。本發明主張在高功率條件下可靠地運作,但是其製造複雜、困難並且昂貴。熱塑性透鏡亦不能經受通常用於將LED焊接至一印刷電路板之處理中的高溫。
本發明試圖提供如下之LED包裝,其尤其適用於使用高功率LED且被配置成可減少由包裝組件之CTE差異所導致的LED包裝失效。該等LED包裝亦係簡單、可撓且堅固的。
根據本發明之發光器之一實施例包括一實質上平坦的支撐表面(substantially planar supporting surface)、一安置於該支撐表面上的光源及一安置於該支撐表面上的密封物。密封物圍繞著光源並能回應溫度變化而膨脹及收縮,而僅受到對該平坦支撐表面之黏著力的約束。
根據本發明之發光器之另一實施例包括一散熱器及一光源,該光源熱接觸於該散熱器之一實質上平坦表面。散熱器為該光源提供支撐且圍繞該光源安置一密封物,該密封物能回應溫度變化而膨脹及/或收縮,而僅受到對該平坦表面之黏著力的約束。將一第一反射元件安置成反射來自光源的光,該反射元件與散熱器及密封物中之至少一個整 合。
根據本發明之光學顯示器(optical display)之一實施例包括一具有一實質上平坦表面的散熱器。複數個發光器安置於該平坦表面上,每一發光器包括一熱接觸於散熱器的光源。一密封物安置於散熱器上以圍繞光源,該密封物能回應溫度變化而膨脹及收縮,此僅受到對該平坦表面之黏著力的約束。每一發光器包括至少一個反射元件,其安置於散熱器及/或密封物上以提高顯示器的發光效率。
製造發光器的方法之一實施例包含:提供一實質上平坦的支撐表面並提供一安置於該實質上平坦的支撐表面上的光源。提供一安置於該支撐表面上及該光源上的密封物,以使得該密封物可隨溫度變化而膨脹及收縮,而僅受到對該平坦表面之黏著力的約束。
由以下詳細描述及附圖,熟習此項技術者應瞭解本發明之此等及其他特徴及優點。
圖1說明根據本發明之一實施例之發光器10。發光器10包含散熱器12,且光源14被安置且熱接觸於該散熱器區域12上。散熱器區域12提供一用於固持光源14之支撐結構且至少部分由高導熱性材料製成以促進熱量自光源14流走。較佳散熱器由高導熱性材料製成,諸如銅(Cu)、鋁(Al)、氮化鋁(AlN)、氧化鋁(AlO)、矽(Si)、碳化矽(SiC)或其組合。
光源14包括一LED,但是其亦可包含其他發光器,尤其諸如固態雷射器、雷射二極體或有機發光二極體。由第一 及第二導線結合16、18為光源14提供功率同時於光源14上施加一偏壓,且在所展示的實施例中,該等導線結合將一偏壓施加於LED光源之反向摻雜層上從而導致光源發光。在根據本發明之其他實施例中,可使用僅一個導線結合,而光源14亦經由散熱器區域12接觸。在另外的實施例中,光源14僅經由散熱器區域12接觸。
在設計成作為單一光源或在顯示器中發光的系統中,可包含根據本發明之發光器。根據本發明之發光器亦可包含單一光源或發射相同或不同波長之光的光源之陣列。為簡單及易於論述起見,發光器10及下列圖中的發光器均展示為具有一個光源。然而,應瞭解,根據本發明之發光器可以許多不同方式配置。
透明密封物20安置成圍繞光源14,且其用於封裝及真空密封光源14及導線結合16、18。密封物20通常安置於散熱器區域12之頂表面上。密封物20可由許多不同的堅硬且光學透明的材料(諸如環氧樹脂、聚矽氧、玻璃或塑膠)製成,且其可係預模塑透鏡或直接形成於光源14上。可使用諸如噴射模塑之技術來製造預模塑密封物或透鏡,然後將其結合至散熱器12。
散熱器區域12亦可包含在與光源14相同表面上的反射層22,該反射層22至少實質上覆蓋所有未受光源14覆蓋的表面。在所展示的實施例中,反射層22覆蓋整個表面,以使得該反射層之部分夾置於光源14與散熱器區域12之間。光源14全向發光,以光路徑1、2、3、4及5代表來自光源的 少數可能存在的光路徑。光路徑1、2及3自光源14延伸並穿過密封物20。光亦可沿自光源14延伸至反射層22並穿過密封物20的光路徑4及5流動。反射層22可反射來自光源14的光以提高發光器10之光學效率。反射層22可包括許多以吾人感興趣的波長反射的反射材料,諸如鋁(Al)、銀(Ag)或其組合。
發光器10具有許多優點,其中一個在於其較不複雜,且因而其成本低於習知裝置。降低複雜性的一種方式係藉由將反射層22與散熱器區域12組合以消除對與密封物20及散熱器12分離之反射器結構的需要,此導致一簡化的製造過程。
由於反射器功能與發光器10中包含的其他組件相整合,所以熱應力亦降低了。因此,以不同的比率相對於彼此膨脹及收縮的組件較少。因此,光源14可更可靠地以較高功率運作,並且因此較高溫度使得發光器10失效的風險變小。另一失效原因可為與所使用之不同材料之間的CTE失配相關聯的密封物20斷裂或破裂。然而,發光器10之配置可降低此事件發生的可能性。密封物20與散熱器區域12之間的表面係平坦的,以使得密封物20僅在一個表面受到約束。此對導線結合16及/或18造成的應力較小,而此種應力可導致該等導線結合斷開或鬆動並減少發光器10的使用壽命。
密封物20可包含堅硬且熔點高的材料(諸如玻璃)以提供受真空密封的包裝,因為與此等材料相關聯的固化處理及 溫度循環已不再是問題。發光器10亦在材料的選擇上提供更大靈主動,該等材料由於可匹配以獲得黏著力所以可用於密封物20及散熱器區域12。因此,密封物20在發光器熱循環過程中分層並自散熱器區域12剝落的可能性降低了。
另一優點在於:發光器10具有較小的佔用面積,以使得一包裝陣列可相互靠攏地安置在一起。此特徴在光顯示器中是有用的,其中通常需要將該等包裝相互靠攏地安置成一陣列從而提高解析度及顯示品質。
圖2至8說明根據本發明之額外實施例之發光器。應注意的是,本揭示案之剩餘部分說明的發光器包含與圖1中說明的組件類似的組件且使用類似的編號,應瞭解以上與發光器10相結合的論述同樣適用於圖2至8中論述的發光器。
圖2說明根據本發明之另一實施例之發光器30。發光器30包含散熱器區域12並可包含反射層22。將光源14安置於反射層22上且安置一密封物40以封裝並密封光源14。密封物40於其底部成形以提供一成角度的表面42,該表面42藉由全內反射(total internal reflection)旁向反射自光源14發射的定向光。
光路徑6、7展示來自光源14的兩個可能的光路徑,此二者皆入射至表面42。表面42可藉由全內反射(TIR)將光路徑6及7分別沿光路徑8及9朝密封物40之頂部反射。此減少了自密封物40側面發射的光並增加了自其頂部發射的光。結果,發光器30可產生更多具有更佳發光效率的聚焦光。應注意的是,自光源14發射的光亦可由反射層22反射並穿 過密封物40(直接或間接地遠離表面42)以進一步提高發光效率。發光器30包含上述發光器10之所有特徴,且具有附加的優點,即更聚焦的光、更佳的光學效率。
圖3說明根據本發明之另一實施例之發光器50,其類似於圖2中的發光器30。發光器50包含散熱器區域12,且散熱器區域12上具有一反射層22。光源14安置於反射層22上且安置一密封物60以圍繞光源14並提供真空密封。密封物60亦包括一成角度的表面42,且於成角度的表面42上施加一反射層64。鄰近第二反射層64及散熱器區域22安置支撐區域49。
第二反射層64反射大多數或所有入射於成角度的表面42上的光,包含未經受TIR並且否則將穿過成角度的表面42的光。此使得來自光源14的光進一步朝向密封物60頂部聚焦並藉由增加發光量來提高光學效率。第二反射層64可由具有不同反射率之不同材料製成,諸如銀(Ag)、鋁(Al)、氧化鈦(TiO)、白樹脂或其組合。可使用許多不同方法(諸如塗布(painting)、電鍍或沈積)來施加第二反射層64,且亦可於密封物60安置於光源14上之前或之後施加第二反射層64。對光不透明的層64之一額外優點在於:其允許包含可提供機械支撐及環境保護而不降級發光器50之光效率的可選用障壁區域49。應選擇用於區域49之材料,使得其在熱循環中不會約束密封物60。
圖4說明根據本發明之另一實施例之發光器70,其類似於圖1之發光器10。發光器70包含散熱器區域12、光源14 及反射層22。發光器70亦包括密封物80,其係於底部具有一空腔81的預成型透鏡。與上述密封物類似,透鏡80可由環氧樹脂、聚矽氧、玻璃或塑膠製成並可使用諸如噴射模塑的方法來製造。密封物80安裝至散熱器12之頂表面上位於光源14上方,而光源14及導線結合16、18配置於空腔81中。結合材料(bonding material)82填充空腔81中的空間並將透鏡80固定至散熱器12。可使用不同類型的密封物,只要其具有配合散熱器12的尺寸同時為光源14、導線結合16與18及結合材料82提供一空腔。
結合材料82可包含不同的材料,諸如環氧樹脂、膠(glue)或聚矽氧凝膠。結合材料82之折射率較佳與密封物80相同以最小化兩種材料間的反射並可被選擇以以得到所要的發光效率。可在將密封物80安置於光源14上方之前,將材料82安置於空腔81中,或者可將密封物80安置於適當位置且經由密封物80或經由散熱器12中的一個孔(未圖示)注入材料82。該孔隨後可用由樹脂或類似材料製成的插塞加以密封。
此配置具有發光器10的優點,且可安裝於光源14及散熱器12上方的密封物在類型及形狀上具有更大靈活性。可使用不同類型的透鏡,只要其具有配合散熱器12的尺寸同時為光源14、導線結合16與18及結合材料82提供一空腔。若聚矽氧凝膠用於材料82,則其可補償不同材料之CTE差異。
圖5說明根據本發明之另一實施例之發光器90。發光器 90包含散熱器區域12、光源14及反射層22。發光器90亦包含一"子彈形"密封物100,其可為預成型透鏡或安置於於光源14上方並成形的環氧樹脂。密封物100之形狀選定成:當光於表面121處穿過密封物100時,可將沿光路徑1、3、4及5的光折射朝向發光器90之頂部。光折射有助於聚焦來自光源14的光。正好以90°角(即,沿光路徑2)撞擊密封物100之表面的光將不會受到折射。
圖6說明根據本發明之另一實施例之發光器110,其同樣包含散熱器區域12、光源14及反射層22。發光器110亦包含一"凹"形密封物120,其更為有效地在內部朝向發光器110之頂部反射光,並可更為有效地將穿過密封物120的光折射朝向發光器110之頂部。密封物120包含一成角度的表面122,其以提高密封物120的聚焦能力及發光器110的發光效率的方式成形。可選擇表面122之角度及形狀,以在光聚焦中獲得所要的增益並減少任何由TIR導致的損耗。
圖7說明根據本發明之另一實施例之發光器130,其包括散熱器區域12、光源14、導線結合16與18及反射層22。發光器130亦包括一蘑菇形密封物140,其具有圓頂142及成角度的莖幹(stem)146。莖幹146可由一第二反射層64覆蓋,從而將來自光源14並沿光路徑6及7撞擊莖幹146的光分別沿光路徑8及9反射朝向圓頂142。由於損耗於TIR的光較少,所以此配置亦可提供聚焦光且更為有效。
圖8說明根據本發明之另一實施例之發光器150,其包含散熱器區域12、光源14及反射層22。發光器150亦包含一 球形密封物160,該球形密封物160亦可於其下半球上包含反射區域64以將沿光路徑6及7的光分別沿光路徑8及9反射朝向密封物160之頂部。由於密封物160及反射區域64,所以此配置同樣提供聚焦光並具有較少的TIR損耗。同樣應瞭解,該密封物可為根據本發明之許多其他具體形狀。
圖9說明一種用於製造根據本發明之發光器的方法之一實施例的流程圖200。該方法包含:步驟201,其提供一具有至少一個平坦表面的散熱器區域,該表面上具有一反射層;及步驟202,其提供安置於至少一個平坦表面上的一光源。步驟203包含提供一安置於散熱器區域之平坦表面上且位於光源上之密封物。由於是平坦的,所以該密封物隨溫度變化的膨脹及收縮僅於該平坦表面受到約束。
可安置密封物以使得其真空密封光源,且該真空密封隨溫度變化保持完好。可安置密封物以使得其與光源之相對位置隨溫度變化保持不變。當溫度變化時,若沒有東西(即一3D反射器結構)可供該密封物推壓,則該相對位置將保持不變。
一可選用之步驟204包括:使密封物鄰近散熱器區域的表面成角度,以藉由將TIR光及折射光引導朝向發光器頂部來提高發光器之效率。
一可選用之步驟205包括提供一安置於成角度的表面上之第二反射元件以提高發光器之發光效率。該第二反射元件可藉由使用塗布、電鍍及沈積中之一種方法來形成。一可選用之步驟207可包括鄰近支撐表面及密封物之一底部 安置一障壁區。該障壁區可形成對光源更好的密封。應注意,可以不同次序執行流程圖200中說明的步驟,且不同的步驟可用於根據本發明之方法中。
儘管已參考本發明之某些較佳組態對其進行相當詳細的描述,但是其他版本也是可能的。上述透鏡可具有許多不同的形狀並可由許多不同材料製成。每一上述光源可進一步包括一基座架以提供靜電放電(ESD)保護。在上述每一實施例中,可蝕刻散熱器以提供一孔來容納光源,以使得光源不會延伸超出散熱器之頂表面。隨後密封物可具有一平坦底部以安裝至散熱器,並位於光源上方。
因此,本文描述的本發明之實施例是例示性的,且不難想象許多修改、變化及重新配置來達到實質上相等的結果,所有此等修改、變化及重新配置均應包含於附加申請專利範圍中所界定的本發明之精神及範疇之內。
1-9‧‧‧光路徑
10,30,50,70,90,110,150‧‧‧發光器
12‧‧‧散熱器/散熱器區域
14‧‧‧光源
16,18‧‧‧導線結合
20,40,60,80,100,120,140,160‧‧‧密封物
22‧‧‧反射層
42,122‧‧‧成角度的表面
49‧‧‧障壁區域/支撐區域
64‧‧‧第二反射層/反射區域
81‧‧‧空腔
82‧‧‧結合材料
121‧‧‧表面
142‧‧‧圓頂
146‧‧‧莖幹
圖1為根據本發明之一發光器的簡化剖視圖;圖2為根據本發明之另一實施例之發光器的簡化剖視圖;圖3為根據本發明之另一實施例之發光器的簡化剖視圖,其具有一成形透鏡(shaped lens);圖4為根據本發明之另一實施例之發光器的簡化剖視圖,其在成形透鏡上具有一反射表面;圖5為根據本發明之另一實施例之發光器的簡化剖視圖,其具有一子彈形透鏡; 圖6為根據本發明之另一實施例之發光器的簡化剖視 圖,其具有一凹形透鏡; 圖7為根據本發明之另一實施例之發光器的簡化剖視 圖,其具有一蘑菇形透鏡; 圖8為根據本發明之另一實施例之發光器的簡化剖視 圖,其具有一圓球形透鏡;及 圖9為一簡化流程圖,其說明一種製造根據本發明之發 光器的方法。
1,2,3,6,7,8,9‧‧‧光路徑
12‧‧‧散熱器/散熱器區域
14‧‧‧光源
16‧‧‧導線結合
18‧‧‧導線結合
22‧‧‧反射層
30‧‧‧發光器
40‧‧‧密封物
42‧‧‧成角度的表面

Claims (2)

  1. 一種發光器,包括:一散熱器;一固態光源,其熱接觸於該散熱器的一實質上平坦的表面,而該散熱器為該光源提供支撐且吸取來自該光源的熱量;安置成圍繞該光源的一密封物,該密封物受到對該實質上平坦的表面及該光源之表面之黏著力而僅侷限在圍繞該光源的區域中,以使得該密封物能夠回應一溫度變化而膨脹及收縮;及安置成反射來自該光源之光的一第一反射元件,該反射元件係與該密封物整合且覆蓋該實質上平坦的表面,其中該光源係與該反射元件直接接觸。
  2. 一種發光器,包括:一實質上平坦的支撐表面;安置於該支撐表面上的一固態光源,該支撐表面提供圍繞該光源之一實質上平坦的表面;安置於圍繞該光源的該支撐表面上之一密封物,其中該密封物包括一向內成角度的較低部分,該密封物能夠回應一溫度變化而膨脹及收縮;與該支撐表面整合之一第一反射元件,其中該第一反射元件實質上覆蓋該平坦的支撐表面之全部;及與該向內成角度的較低部分整合之一第二反射元件。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI583086B (zh) * 2016-07-18 2017-05-11 華星光通科技股份有限公司 光發射器散熱結構及包含其的光發射器

Families Citing this family (164)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10340424B2 (en) 2002-08-30 2019-07-02 GE Lighting Solutions, LLC Light emitting diode component
US7224000B2 (en) * 2002-08-30 2007-05-29 Lumination, Llc Light emitting diode component
US7800121B2 (en) 2002-08-30 2010-09-21 Lumination Llc Light emitting diode component
ES2335878T3 (es) 2002-08-30 2010-04-06 Lumination, Llc Led recubierto con eficacia mejorada.
EP2264798B1 (en) 2003-04-30 2020-10-14 Cree, Inc. High powered light emitter packages with compact optics
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
US7777235B2 (en) * 2003-05-05 2010-08-17 Lighting Science Group Corporation Light emitting diodes with improved light collimation
US6803607B1 (en) * 2003-06-13 2004-10-12 Cotco Holdings Limited Surface mountable light emitting device
US6995402B2 (en) * 2003-10-03 2006-02-07 Lumileds Lighting, U.S., Llc Integrated reflector cup for a light emitting device mount
JP3987485B2 (ja) * 2003-12-25 2007-10-10 セイコーエプソン株式会社 光源装置及びプロジェクタ
US7355284B2 (en) * 2004-03-29 2008-04-08 Cree, Inc. Semiconductor light emitting devices including flexible film having therein an optical element
KR100623024B1 (ko) * 2004-06-10 2006-09-19 엘지전자 주식회사 고출력 led 패키지
EP1794808B1 (en) * 2004-09-10 2017-08-09 Seoul Semiconductor Co., Ltd. Light emitting diode package having multiple molding resins
US7748873B2 (en) * 2004-10-07 2010-07-06 Seoul Semiconductor Co., Ltd. Side illumination lens and luminescent device using the same
US7452737B2 (en) * 2004-11-15 2008-11-18 Philips Lumileds Lighting Company, Llc Molded lens over LED die
US7352011B2 (en) * 2004-11-15 2008-04-01 Philips Lumileds Lighting Company, Llc Wide emitting lens for LED useful for backlighting
US7344902B2 (en) * 2004-11-15 2008-03-18 Philips Lumileds Lighting Company, Llc Overmolded lens over LED die
US7858408B2 (en) * 2004-11-15 2010-12-28 Koninklijke Philips Electronics N.V. LED with phosphor tile and overmolded phosphor in lens
KR100580753B1 (ko) 2004-12-17 2006-05-15 엘지이노텍 주식회사 발광소자 패키지
US7821023B2 (en) 2005-01-10 2010-10-26 Cree, Inc. Solid state lighting component
US9793247B2 (en) 2005-01-10 2017-10-17 Cree, Inc. Solid state lighting component
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
JP4634810B2 (ja) * 2005-01-20 2011-02-16 信越化学工業株式会社 シリコーン封止型led
JP4876685B2 (ja) * 2005-04-15 2012-02-15 旭硝子株式会社 ガラス封止発光素子の製造方法
WO2006112417A1 (ja) 2005-04-15 2006-10-26 Asahi Glass Company, Limited ガラス封止発光素子、ガラス封止発光素子付き回路基板およびそれらの製造方法
US8669572B2 (en) 2005-06-10 2014-03-11 Cree, Inc. Power lamp package
KR101232505B1 (ko) * 2005-06-30 2013-02-12 엘지디스플레이 주식회사 발광다이오드 패키지 제조방법, 백라이트 유닛 및액정표시장치
KR100592508B1 (ko) * 2005-07-15 2006-06-26 한국광기술원 비콘 모양의 기판을 구비한 고출력 발광 다이오드 패키지
JP2007059857A (ja) * 2005-07-25 2007-03-08 Matsushita Electric Ind Co Ltd 発光モジュール及び投映型表示装置
JP4925346B2 (ja) * 2005-07-25 2012-04-25 パナソニック株式会社 発光装置
DE102005052356A1 (de) * 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Beleuchtungseinheit mit Lumineszenzdiodenchip und Lichtleiter, Verfahren zum Herstellen einer Beleuchtungseinheit und LCD-Display
CN101297411B (zh) * 2005-10-24 2010-05-19 3M创新有限公司 发光器件的制造方法及发光器件
US7595515B2 (en) * 2005-10-24 2009-09-29 3M Innovative Properties Company Method of making light emitting device having a molded encapsulant
JP2009527071A (ja) 2005-12-22 2009-07-23 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド 照明装置
US7675145B2 (en) 2006-03-28 2010-03-09 Cree Hong Kong Limited Apparatus, system and method for use in mounting electronic elements
JP2007273562A (ja) * 2006-03-30 2007-10-18 Toshiba Corp 半導体発光装置
JP2009534866A (ja) 2006-04-24 2009-09-24 クリー, インコーポレイティッド 横向き平面実装白色led
US11210971B2 (en) 2009-07-06 2021-12-28 Cree Huizhou Solid State Lighting Company Limited Light emitting diode display with tilted peak emission pattern
WO2007123239A1 (ja) * 2006-04-24 2007-11-01 Asahi Glass Company, Limited 発光装置
US8748915B2 (en) 2006-04-24 2014-06-10 Cree Hong Kong Limited Emitter package with angled or vertical LED
US7635915B2 (en) 2006-04-26 2009-12-22 Cree Hong Kong Limited Apparatus and method for use in mounting electronic elements
US7521727B2 (en) * 2006-04-26 2009-04-21 Rohm And Haas Company Light emitting device having improved light extraction efficiency and method of making same
US7655486B2 (en) * 2006-05-17 2010-02-02 3M Innovative Properties Company Method of making light emitting device with multilayer silicon-containing encapsulant
US20070269586A1 (en) * 2006-05-17 2007-11-22 3M Innovative Properties Company Method of making light emitting device with silicon-containing composition
KR100705552B1 (ko) * 2006-06-30 2007-04-09 서울반도체 주식회사 발광 다이오드
DE102007021042A1 (de) * 2006-07-24 2008-01-31 Samsung Electro-Mechanics Co., Ltd., Suwon Leuchtdiodenmodul für Lichtquellenreihe
US8735920B2 (en) * 2006-07-31 2014-05-27 Cree, Inc. Light emitting diode package with optical element
US20080029720A1 (en) 2006-08-03 2008-02-07 Intematix Corporation LED lighting arrangement including light emitting phosphor
US8367945B2 (en) 2006-08-16 2013-02-05 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US8092735B2 (en) 2006-08-17 2012-01-10 3M Innovative Properties Company Method of making a light emitting device having a molded encapsulant
KR101258227B1 (ko) 2006-08-29 2013-04-25 서울반도체 주식회사 발광 소자
US7842960B2 (en) 2006-09-06 2010-11-30 Lumination Llc Light emitting packages and methods of making same
JP5372766B2 (ja) * 2006-11-15 2013-12-18 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 光取り出し効率の高い球形led
US7889421B2 (en) * 2006-11-17 2011-02-15 Rensselaer Polytechnic Institute High-power white LEDs and manufacturing method thereof
JP2008159705A (ja) * 2006-12-21 2008-07-10 Matsushita Electric Works Ltd 発光装置
KR100834925B1 (ko) 2006-12-22 2008-06-03 (주) 아모센스 반도체 패키지의 제조방법
JPWO2008096714A1 (ja) * 2007-02-05 2010-05-20 株式会社ニコン 樹脂封止発光素子、平面状光源及びそれらの製造方法、並びに液晶表示装置
US9711703B2 (en) 2007-02-12 2017-07-18 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
JP2008205170A (ja) * 2007-02-20 2008-09-04 Nec Lighting Ltd 発光半導体デバイス
JP5179766B2 (ja) * 2007-03-08 2013-04-10 スタンレー電気株式会社 半導体発光装置およびその製造方法
US11114594B2 (en) 2007-08-24 2021-09-07 Creeled, Inc. Light emitting device packages using light scattering particles of different size
DE102007049799A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US8866169B2 (en) 2007-10-31 2014-10-21 Cree, Inc. LED package with increased feature sizes
USD615504S1 (en) 2007-10-31 2010-05-11 Cree, Inc. Emitter package
USD633631S1 (en) 2007-12-14 2011-03-01 Cree Hong Kong Limited Light source of light emitting diode
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
USD634863S1 (en) 2008-01-10 2011-03-22 Cree Hong Kong Limited Light source of light emitting diode
KR101028852B1 (ko) * 2008-03-26 2011-04-12 서울반도체 주식회사 사이드뷰 led 패키지 및 이를 포함하는 백라이트 모듈
CN101562221A (zh) * 2008-04-18 2009-10-21 富准精密工业(深圳)有限公司 侧面发光二极管
US8049230B2 (en) 2008-05-16 2011-11-01 Cree Huizhou Opto Limited Apparatus and system for miniature surface mount devices
JP5336775B2 (ja) * 2008-06-11 2013-11-06 パナソニック株式会社 発光装置
KR101490862B1 (ko) * 2008-09-23 2015-02-09 주식회사 아모센스 엘이디 패키지 및 그 엘이디 패키지의 제조 방법
US9425172B2 (en) 2008-10-24 2016-08-23 Cree, Inc. Light emitter array
US8791471B2 (en) 2008-11-07 2014-07-29 Cree Hong Kong Limited Multi-chip light emitting diode modules
US8390193B2 (en) * 2008-12-31 2013-03-05 Intematix Corporation Light emitting device with phosphor wavelength conversion
US8368112B2 (en) 2009-01-14 2013-02-05 Cree Huizhou Opto Limited Aligned multiple emitter package
TWI469402B (zh) * 2009-02-24 2015-01-11 Ind Tech Res Inst 發光二極體封裝結構
TWI413284B (zh) * 2009-02-24 2013-10-21 Ind Tech Res Inst 發光二極體封裝結構
US8692274B2 (en) 2009-02-24 2014-04-08 Industrial Technology Research Institute Light emitting diode package structure
US8576406B1 (en) 2009-02-25 2013-11-05 Physical Optics Corporation Luminaire illumination system and method
CN101866995B (zh) * 2009-04-16 2012-08-08 财团法人工业技术研究院 发光二极管封装结构
US8089075B2 (en) * 2009-04-17 2012-01-03 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. LFCC package with a reflector cup surrounded by a single encapsulant
US8101955B2 (en) * 2009-04-17 2012-01-24 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. PLCC package with a reflector cup surrounded by an encapsulant
US8415692B2 (en) 2009-07-06 2013-04-09 Cree, Inc. LED packages with scattering particle regions
US8598809B2 (en) 2009-08-19 2013-12-03 Cree, Inc. White light color changing solid state lighting and methods
US9000466B1 (en) 2010-08-23 2015-04-07 Soraa, Inc. Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
US8207554B2 (en) * 2009-09-11 2012-06-26 Soraa, Inc. System and method for LED packaging
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
US9293667B2 (en) 2010-08-19 2016-03-22 Soraa, Inc. System and method for selected pump LEDs with multiple phosphors
KR20120094477A (ko) 2009-09-25 2012-08-24 크리, 인코포레이티드 낮은 눈부심 및 높은 광도 균일성을 갖는 조명 장치
US8593040B2 (en) 2009-10-02 2013-11-26 Ge Lighting Solutions Llc LED lamp with surface area enhancing fins
US8575642B1 (en) 2009-10-30 2013-11-05 Soraa, Inc. Optical devices having reflection mode wavelength material
KR100993072B1 (ko) * 2010-01-11 2010-11-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
KR101647796B1 (ko) * 2010-04-06 2016-08-12 엘지이노텍 주식회사 발광 소자 및 그 제조방법
US9293678B2 (en) * 2010-07-15 2016-03-22 Micron Technology, Inc. Solid-state light emitters having substrates with thermal and electrical conductivity enhancements and method of manufacture
US9546765B2 (en) 2010-10-05 2017-01-17 Intematix Corporation Diffuser component having scattering particles
US8455882B2 (en) 2010-10-15 2013-06-04 Cree, Inc. High efficiency LEDs
US8541951B1 (en) 2010-11-17 2013-09-24 Soraa, Inc. High temperature LED system using an AC power source
US8896235B1 (en) 2010-11-17 2014-11-25 Soraa, Inc. High temperature LED system using an AC power source
US9048396B2 (en) 2012-06-11 2015-06-02 Cree, Inc. LED package with encapsulant having planar surfaces
US10147853B2 (en) 2011-03-18 2018-12-04 Cree, Inc. Encapsulant with index matched thixotropic agent
JP2012238830A (ja) * 2011-05-09 2012-12-06 Lumirich Co Ltd 発光ダイオード素子
US9488324B2 (en) 2011-09-02 2016-11-08 Soraa, Inc. Accessories for LED lamp systems
KR101186815B1 (ko) * 2011-10-10 2012-10-02 김영석 Led 패키지
KR101168854B1 (ko) * 2011-10-10 2012-07-26 김영석 Led 패키지의 제조방법
US9115868B2 (en) 2011-10-13 2015-08-25 Intematix Corporation Wavelength conversion component with improved protective characteristics for remote wavelength conversion
US8564004B2 (en) 2011-11-29 2013-10-22 Cree, Inc. Complex primary optics with intermediate elements
US8668366B2 (en) * 2011-12-07 2014-03-11 Tsmc Solid State Lighting Ltd. Energy star compliant LED lamp
TW201338642A (zh) * 2012-03-14 2013-09-16 Walsin Lihwa Corp 承載發光二極體之基板及該基板之製造方法
TWI528596B (zh) * 2012-03-16 2016-04-01 鴻海精密工業股份有限公司 發光二極體封裝結構及其製造方法
KR101461154B1 (ko) * 2012-08-24 2014-11-12 주식회사 씨티랩 반도체 소자 구조물을 제조하는 방법
US8985794B1 (en) 2012-04-17 2015-03-24 Soraa, Inc. Providing remote blue phosphors in an LED lamp
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
US20130329429A1 (en) * 2012-06-11 2013-12-12 Cree, Inc. Emitter package with integrated mixing chamber
US10424702B2 (en) * 2012-06-11 2019-09-24 Cree, Inc. Compact LED package with reflectivity layer
US9887327B2 (en) * 2012-06-11 2018-02-06 Cree, Inc. LED package with encapsulant having curved and planar surfaces
US20130328074A1 (en) * 2012-06-11 2013-12-12 Cree, Inc. Led package with multiple element light source and encapsulant having planar surfaces
US10468565B2 (en) 2012-06-11 2019-11-05 Cree, Inc. LED package with multiple element light source and encapsulant having curved and/or planar surfaces
TW201411892A (zh) * 2012-09-14 2014-03-16 Lextar Electronics Corp 發光二極體
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US20140159084A1 (en) * 2012-12-12 2014-06-12 Cree, Inc. Led dome with improved color spatial uniformity
US9761763B2 (en) 2012-12-21 2017-09-12 Soraa, Inc. Dense-luminescent-materials-coated violet LEDs
US20140185269A1 (en) 2012-12-28 2014-07-03 Intermatix Corporation Solid-state lamps utilizing photoluminescence wavelength conversion components
US10355182B2 (en) 2013-03-13 2019-07-16 Lumileds Llc Encapsulated LED lens with bottom reflectors
TWI627371B (zh) * 2013-03-15 2018-06-21 英特曼帝克司公司 光致發光波長轉換組件
USD735683S1 (en) * 2013-05-03 2015-08-04 Cree, Inc. LED package
US10807329B2 (en) 2013-05-10 2020-10-20 Abl Ip Holding Llc Silicone optics
JP6207236B2 (ja) 2013-05-28 2017-10-04 三菱電機株式会社 点光源、面状光源装置および表示装置
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
TW201505134A (zh) * 2013-07-25 2015-02-01 Lingsen Precision Ind Ltd 光學模組的封裝結構
US9461024B2 (en) 2013-08-01 2016-10-04 Cree, Inc. Light emitter devices and methods for light emitting diode (LED) chips
JP6318495B2 (ja) * 2013-08-07 2018-05-09 日亜化学工業株式会社 発光装置
USD758976S1 (en) * 2013-08-08 2016-06-14 Cree, Inc. LED package
JP6201617B2 (ja) * 2013-10-17 2017-09-27 日亜化学工業株式会社 発光装置
US9976710B2 (en) 2013-10-30 2018-05-22 Lilibrand Llc Flexible strip lighting apparatus and methods
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
USD746240S1 (en) * 2013-12-30 2015-12-29 Cree, Inc. LED package
US9601670B2 (en) 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate
KR102222580B1 (ko) 2014-07-30 2021-03-05 삼성전자주식회사 발광 소자 패키지 및 이를 포함하는 표시 장치
US10622522B2 (en) 2014-09-05 2020-04-14 Theodore Lowes LED packages with chips having insulated surfaces
CN104296072A (zh) * 2014-10-09 2015-01-21 青岛海信电器股份有限公司 一种发光器件及背光源
USD762184S1 (en) * 2014-11-13 2016-07-26 Mitsubishi Electric Corporation Light emitting diode
USD826871S1 (en) * 2014-12-11 2018-08-28 Cree, Inc. Light emitting diode device
US9752925B2 (en) * 2015-02-13 2017-09-05 Taiwan Biophotonic Corporation Optical sensor
US9953797B2 (en) * 2015-09-28 2018-04-24 General Electric Company Flexible flat emitter for X-ray tubes
US11060702B2 (en) 2016-03-08 2021-07-13 Ecosense Lighting Inc. Lighting system with lens assembly
JP1566954S (zh) * 2016-04-28 2017-01-16
CN106520050A (zh) * 2016-10-26 2017-03-22 安徽飞达电气科技有限公司 一种电容器灌封材料
DE102016125909A1 (de) * 2016-12-30 2018-07-05 Osram Opto Semiconductors Gmbh Bauteil und Anschlussträger
US11296057B2 (en) 2017-01-27 2022-04-05 EcoSense Lighting, Inc. Lighting systems with high color rendering index and uniform planar illumination
US20180328552A1 (en) 2017-03-09 2018-11-15 Lilibrand Llc Fixtures and lighting accessories for lighting devices
JP1588923S (zh) * 2017-03-15 2017-10-23
JP6432656B2 (ja) * 2017-08-22 2018-12-05 日亜化学工業株式会社 発光装置
CN110197867A (zh) * 2018-02-26 2019-09-03 世迈克琉明有限公司 半导体发光器件及其制造方法
CN114981592A (zh) 2018-05-01 2022-08-30 生态照明公司 具有中央硅酮模块的照明***及装置
WO2020131933A1 (en) 2018-12-17 2020-06-25 Lilibrand Llc Strip lighting systems which comply with ac driving power
JP7226131B2 (ja) * 2019-06-25 2023-02-21 豊田合成株式会社 発光装置及びその製造方法
JP7460898B2 (ja) * 2020-04-24 2024-04-03 日亜化学工業株式会社 発光装置
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device

Family Cites Families (321)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2127239A5 (zh) * 1971-03-01 1972-10-13 Radiotechnique Compelec
JPS508494A (zh) * 1973-05-21 1975-01-28
JPS5371375A (en) 1976-12-08 1978-06-24 Schumacher Nihon Kk Filter for high pressure gas
JPS5722581Y2 (zh) * 1979-08-21 1982-05-17
US4476620A (en) * 1979-10-19 1984-10-16 Matsushita Electric Industrial Co., Ltd. Method of making a gallium nitride light-emitting diode
DE3128187A1 (de) * 1981-07-16 1983-02-03 Joachim 8068 Pfaffenhofen Sieg Opto-elektronisches bauelement
JPS6016175A (ja) 1983-07-07 1985-01-26 Toshiba Corp 制御整流器のデイジタル制御装置
JPS6132483A (ja) 1984-07-24 1986-02-15 Kimura Denki Kk Ledを用いた球状発光体
JPS6194362A (ja) 1984-10-15 1986-05-13 Mitsubishi Electric Corp サイリスタ装置
JPS61144890A (ja) 1984-12-19 1986-07-02 Stanley Electric Co Ltd Ledランプのレンズの製造方法
JPS6214481A (ja) 1985-07-12 1987-01-23 Saamobonitsuku:Kk 集熱媒体装置
JPS62143942A (ja) 1985-12-18 1987-06-27 Taihoo Kogyo Kk 防曇材
JP2520423B2 (ja) 1987-06-29 1996-07-31 エヌティエヌ株式会社 潤滑性ゴム組成物
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
JPH01230274A (ja) 1987-11-13 1989-09-13 Iwasaki Electric Co Ltd 発光ダイオード
US5094185A (en) 1987-11-24 1992-03-10 Lumel, Inc. Electroluminescent lamps and phosphors
JPH01139664A (ja) 1987-11-27 1989-06-01 Sanken Kagaku Kk 溶剤型粘着剤
JPH0770755B2 (ja) 1988-01-21 1995-07-31 三菱化学株式会社 高輝度led用エピタキシャル基板及びその製造方法
JPH01287973A (ja) 1988-05-13 1989-11-20 Takiron Co Ltd ドットマトリックス発光表示体
US4912532A (en) 1988-08-26 1990-03-27 Hewlett-Packard Company Electro-optical device with inverted transparent substrate and method for making same
US5087949A (en) 1989-06-27 1992-02-11 Hewlett-Packard Company Light-emitting diode with diagonal faces
EP0405757A3 (en) 1989-06-27 1991-01-30 Hewlett-Packard Company High efficiency light-emitting diode
US5103271A (en) 1989-09-28 1992-04-07 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method of fabricating the same
US4946547A (en) 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
JPH0644567B2 (ja) 1989-12-18 1994-06-08 株式会社日立製作所 半導体形状の改善方法
JPH04555A (ja) 1990-04-17 1992-01-06 Matsushita Electric Ind Co Ltd データ処理装置
US5226052A (en) * 1990-05-08 1993-07-06 Rohm, Ltd. Laser diode system for cutting off the environment from the laser diode
JPH0428269A (ja) * 1990-05-23 1992-01-30 Fujikura Ltd Ledベアチップの実装構造
US5200022A (en) 1990-10-03 1993-04-06 Cree Research, Inc. Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
JP2765256B2 (ja) 1991-04-10 1998-06-11 日立電線株式会社 発光ダイオード
JPH06275866A (ja) 1993-03-19 1994-09-30 Fujitsu Ltd ポーラス半導体発光装置と製造方法
JPH05327012A (ja) 1992-05-15 1993-12-10 Sanyo Electric Co Ltd 炭化ケイ素発光ダイオード
JP3269668B2 (ja) 1992-09-18 2002-03-25 株式会社日立製作所 太陽電池
US5298767A (en) 1992-10-06 1994-03-29 Kulite Semiconductor Products, Inc. Porous silicon carbide (SiC) semiconductor device
JPH06177427A (ja) 1992-12-03 1994-06-24 Rohm Co Ltd 発光ダイオードランプ
US5376580A (en) 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
US5834570A (en) * 1993-06-08 1998-11-10 Nippon Steel Chemical Co., Ltd. Epoxy resin composition
JPH077180A (ja) 1993-06-16 1995-01-10 Sanyo Electric Co Ltd 発光素子
GB9320291D0 (en) 1993-10-01 1993-11-17 Brown John H Optical directing devices for light emitting diodes
JPH08148280A (ja) 1994-04-14 1996-06-07 Toshiba Corp 半導体装置およびその製造方法
JP2994219B2 (ja) * 1994-05-24 1999-12-27 シャープ株式会社 半導体デバイスの製造方法
SG41939A1 (en) * 1994-10-07 1997-08-15 Shell Int Research Epoxy resin composition for semiconductor encapsulation
JP3127195B2 (ja) 1994-12-06 2001-01-22 シャープ株式会社 発光デバイスおよびその製造方法
US5614734A (en) 1995-03-15 1997-03-25 Yale University High efficency LED structure
JP3792268B2 (ja) 1995-05-23 2006-07-05 ローム株式会社 チップタイプ発光装置の製造方法
JPH0983018A (ja) 1995-09-11 1997-03-28 Nippon Denyo Kk 発光ダイオードユニット
JPH09153646A (ja) * 1995-09-27 1997-06-10 Toshiba Corp 光半導体装置およびその製造方法
US5851449A (en) * 1995-09-27 1998-12-22 Kabushiki Kaisha Toshiba Method for manufacturing a surface-mounted type optical semiconductor device
JPH09138402A (ja) 1995-11-15 1997-05-27 Kouha:Kk 液晶表示装置照明用ledバックライト装置
JP3311914B2 (ja) 1995-12-27 2002-08-05 株式会社シチズン電子 チップ型発光ダイオード
US5985687A (en) 1996-04-12 1999-11-16 The Regents Of The University Of California Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials
US20040239243A1 (en) 1996-06-13 2004-12-02 Roberts John K. Light emitting assembly
US5803579A (en) 1996-06-13 1998-09-08 Gentex Corporation Illuminator assembly incorporating light emitting diodes
US6550949B1 (en) 1996-06-13 2003-04-22 Gentex Corporation Systems and components for enhancing rear vision from a vehicle
JPH1012929A (ja) 1996-06-25 1998-01-16 Hitachi Cable Ltd 発光ダイオードの実装構造
DE19638667C2 (de) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
EP1439586B1 (de) 1996-06-26 2014-03-12 OSRAM Opto Semiconductors GmbH Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
TW383508B (en) 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
DE19640594B4 (de) 1996-10-01 2016-08-04 Osram Gmbh Bauelement
JPH10163535A (ja) 1996-11-27 1998-06-19 Kasei Optonix Co Ltd 白色発光素子
JP3065263B2 (ja) 1996-12-27 2000-07-17 日亜化学工業株式会社 発光装置及びそれを用いたled表示器
EP0960353B1 (en) 1997-02-13 2010-04-14 Honeywell International Inc. Illumination system with light recycling to enhance brightness
JPH10233532A (ja) 1997-02-21 1998-09-02 Houshin Kagaku Sangiyoushiyo:Kk 発光ダイオード
JP3985065B2 (ja) 1997-05-14 2007-10-03 忠弘 大見 多孔質シリコン基板の形成方法及び多孔質シリコン基板の形成装置
US5939732A (en) 1997-05-22 1999-08-17 Kulite Semiconductor Products, Inc. Vertical cavity-emitting porous silicon carbide light-emitting diode device and preparation thereof
US6784463B2 (en) 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
JPH1126808A (ja) 1997-07-09 1999-01-29 Matsushita Electric Ind Co Ltd 発光素子およびその製造方法
US5847507A (en) * 1997-07-14 1998-12-08 Hewlett-Packard Company Fluorescent dye added to epoxy of light emitting diode lens
JP3663281B2 (ja) 1997-07-15 2005-06-22 ローム株式会社 半導体発光素子
US7014336B1 (en) 1999-11-18 2006-03-21 Color Kinetics Incorporated Systems and methods for generating and modulating illumination conditions
JPH11224960A (ja) * 1997-11-19 1999-08-17 Unisplay Sa Ledランプ並びにledチップ
JPH11177129A (ja) 1997-12-16 1999-07-02 Rohm Co Ltd チップ型led、ledランプおよびledディスプレイ
US6071795A (en) 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
US6184544B1 (en) * 1998-01-29 2001-02-06 Rohm Co., Ltd. Semiconductor light emitting device with light reflective current diffusion layer
JPH11220178A (ja) * 1998-01-30 1999-08-10 Rohm Co Ltd 半導体発光装置
DE19813269A1 (de) * 1998-03-25 1999-09-30 Hoechst Diafoil Gmbh Siegelfähige Polyesterfolie mit hoher Sauerstoffbarriere, Verfahren zu ihrer Herstellung und ihre Verwendung
JP3704941B2 (ja) 1998-03-30 2005-10-12 日亜化学工業株式会社 発光装置
JP4319265B2 (ja) * 1998-04-22 2009-08-26 株式会社デンソー 厚膜回路基板の焼成方法
DE19829197C2 (de) 1998-06-30 2002-06-20 Siemens Ag Strahlungsaussendendes und/oder -empfangendes Bauelement
US6225647B1 (en) 1998-07-27 2001-05-01 Kulite Semiconductor Products, Inc. Passivation of porous semiconductors for improved optoelectronic device performance and light-emitting diode based on same
US5959316A (en) 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
WO2000016411A1 (fr) 1998-09-10 2000-03-23 Rohm Co., Ltd. Del a semi-conducteur et son procede de fabrication
JP3525061B2 (ja) 1998-09-25 2004-05-10 株式会社東芝 半導体発光素子の製造方法
DE69937993C5 (de) 1998-09-28 2019-01-10 Koninklijke Philips N.V. Beleuchtungsanordnung
US6274924B1 (en) 1998-11-05 2001-08-14 Lumileds Lighting, U.S. Llc Surface mountable LED package
US6429583B1 (en) 1998-11-30 2002-08-06 General Electric Company Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors
JP3469484B2 (ja) 1998-12-24 2003-11-25 株式会社東芝 半導体発光素子およびその製造方法
US6744800B1 (en) 1998-12-30 2004-06-01 Xerox Corporation Method and structure for nitride based laser diode arrays on an insulating substrate
JP2000208822A (ja) 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp 半導体発光装置
US6212213B1 (en) 1999-01-29 2001-04-03 Agilent Technologies, Inc. Projector light source utilizing a solid state green light source
US6320206B1 (en) 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
US20010042866A1 (en) 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
US6521916B2 (en) 1999-03-15 2003-02-18 Gentex Corporation Radiation emitter device having an encapsulant with different zones of thermal conductivity
US6258699B1 (en) 1999-05-10 2001-07-10 Visual Photonics Epitaxy Co., Ltd. Light emitting diode with a permanent subtrate of transparent glass or quartz and the method for manufacturing the same
US6222207B1 (en) * 1999-05-24 2001-04-24 Lumileds Lighting, U.S. Llc Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip
US6489637B1 (en) * 1999-06-09 2002-12-03 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
US6548832B1 (en) * 1999-06-09 2003-04-15 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
JP2000353826A (ja) * 1999-06-09 2000-12-19 Sanyo Electric Co Ltd 混成集積回路装置および光照射装置
DE60042187D1 (de) 1999-06-09 2009-06-25 Toshiba Kawasaki Kk Bond-typ Halbleitersubstrat, lichtemittierendes Halbleiterbauelement und Herstellungsverfahren
EP1059678A2 (en) * 1999-06-09 2000-12-13 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
JP2001000043A (ja) 1999-06-18 2001-01-09 Mitsubishi Chemicals Corp 栽培用光源
KR100425566B1 (ko) 1999-06-23 2004-04-01 가부시키가이샤 시티즌 덴시 발광 다이오드
DE19931689A1 (de) * 1999-07-08 2001-01-11 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Optoelektronische Bauteilgruppe
DE19952932C1 (de) 1999-11-03 2001-05-03 Osram Opto Semiconductors Gmbh LED-Weißlichtquelle mit breitbandiger Anregung
US6513949B1 (en) 1999-12-02 2003-02-04 Koninklijke Philips Electronics N.V. LED/phosphor-LED hybrid lighting systems
US6350041B1 (en) 1999-12-03 2002-02-26 Cree Lighting Company High output radial dispersing lamp using a solid state light source
US6410942B1 (en) 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
CN1292493C (zh) 1999-12-03 2006-12-27 美商克立股份有限公司 藉由内部及外部光学组件之使用而加强发光二极管中的光放出
JP4125848B2 (ja) * 1999-12-17 2008-07-30 ローム株式会社 ケース付チップ型発光装置
JP2001177153A (ja) 1999-12-17 2001-06-29 Sharp Corp 発光装置
US6486499B1 (en) 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US6573537B1 (en) 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
JP2000315826A (ja) 2000-01-01 2000-11-14 Nichia Chem Ind Ltd 発光装置及びその形成方法、砲弾型発光ダイオード、チップタイプled
JP3696021B2 (ja) 2000-01-20 2005-09-14 三洋電機株式会社 光照射装置
TW465123B (en) 2000-02-02 2001-11-21 Ind Tech Res Inst High power white light LED
WO2001059851A1 (en) * 2000-02-09 2001-08-16 Nippon Leiz Corporation Light source
JP2001223388A (ja) * 2000-02-09 2001-08-17 Nippon Leiz Co Ltd 光源装置
DE10008583A1 (de) 2000-02-24 2001-09-13 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optisch transparenten Substrates und Verfahren zum Herstellen eines lichtemittierenden Halbleiterchips
US6538371B1 (en) 2000-03-27 2003-03-25 The General Electric Company White light illumination system with improved color output
JP4060511B2 (ja) 2000-03-28 2008-03-12 パイオニア株式会社 窒化物半導体素子の分離方法
JP2003533030A (ja) 2000-04-26 2003-11-05 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング GaNをベースとする発光ダイオードチップおよび発光ダイオード構造素子の製造法
US20020011192A1 (en) * 2000-05-09 2002-01-31 Yuji Tachizuka Moisture conditioning building material and its production method
US6534346B2 (en) 2000-05-16 2003-03-18 Nippon Electric Glass Co., Ltd. Glass and glass tube for encapsulating semiconductors
US6577073B2 (en) 2000-05-31 2003-06-10 Matsushita Electric Industrial Co., Ltd. Led lamp
JP4386693B2 (ja) 2000-05-31 2009-12-16 パナソニック株式会社 Ledランプおよびランプユニット
JP2001345485A (ja) * 2000-06-02 2001-12-14 Toyoda Gosei Co Ltd 発光装置
GB0015898D0 (en) 2000-06-28 2000-08-23 Oxley Dev Co Ltd Light
US6562648B1 (en) 2000-08-23 2003-05-13 Xerox Corporation Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
JP2002076443A (ja) 2000-08-29 2002-03-15 Citizen Electronics Co Ltd Ledチップ用反射カップ
DE10042947A1 (de) 2000-08-31 2002-03-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
US6345903B1 (en) * 2000-09-01 2002-02-12 Citizen Electronics Co., Ltd. Surface-mount type emitting diode and method of manufacturing same
JP2002141556A (ja) 2000-09-12 2002-05-17 Lumileds Lighting Us Llc 改良された光抽出効果を有する発光ダイオード
JP3466144B2 (ja) 2000-09-22 2003-11-10 士郎 酒井 半導体の表面を荒くする方法
JP4565723B2 (ja) 2000-09-26 2010-10-20 ローム株式会社 半導体発光装置
US6429460B1 (en) 2000-09-28 2002-08-06 United Epitaxy Company, Ltd. Highly luminous light emitting device
US6998281B2 (en) 2000-10-12 2006-02-14 General Electric Company Solid state lighting device with reduced form factor including LED with directional emission and package with microoptics
CN1182590C (zh) * 2000-10-20 2004-12-29 中田仗祐 发光或者受光用半导体器件及其制造方法
JP4091261B2 (ja) 2000-10-31 2008-05-28 株式会社東芝 半導体発光素子及びその製造方法
WO2002041364A2 (en) 2000-11-16 2002-05-23 Emcore Corporation Led packages having improved light extraction
JP5110744B2 (ja) 2000-12-21 2012-12-26 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 発光装置及びその製造方法
AT410266B (de) 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh Lichtquelle mit einem lichtemittierenden element
US6930737B2 (en) 2001-01-16 2005-08-16 Visteon Global Technologies, Inc. LED backlighting system
JP2002217450A (ja) 2001-01-22 2002-08-02 Sanken Electric Co Ltd 半導体発光素子及びその製造方法
MY145695A (en) 2001-01-24 2012-03-30 Nichia Corp Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same
US6791119B2 (en) 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
JP2002261333A (ja) 2001-03-05 2002-09-13 Toyoda Gosei Co Ltd 発光装置
JP3830083B2 (ja) 2001-03-07 2006-10-04 スタンレー電気株式会社 半導体装置およびその製造方法
JP4430264B2 (ja) 2001-03-19 2010-03-10 日亜化学工業株式会社 表面実装型発光装置
US6468824B2 (en) 2001-03-22 2002-10-22 Uni Light Technology Inc. Method for forming a semiconductor device having a metallic substrate
JP2003115204A (ja) 2001-10-04 2003-04-18 Toyoda Gosei Co Ltd 遮光反射型デバイス及び光源
US6833566B2 (en) * 2001-03-28 2004-12-21 Toyoda Gosei Co., Ltd. Light emitting diode with heat sink
JP2002289923A (ja) 2001-03-28 2002-10-04 Toyoda Gosei Co Ltd 発光ダイオード及びその製造方法
JP2002299699A (ja) * 2001-03-30 2002-10-11 Sumitomo Electric Ind Ltd 発光装置およびその製造方法
JP4101468B2 (ja) * 2001-04-09 2008-06-18 豊田合成株式会社 発光装置の製造方法
US6686676B2 (en) 2001-04-30 2004-02-03 General Electric Company UV reflectors and UV-based light sources having reduced UV radiation leakage incorporating the same
US6616862B2 (en) 2001-05-21 2003-09-09 General Electric Company Yellow light-emitting halophosphate phosphors and light sources incorporating the same
JP3940596B2 (ja) 2001-05-24 2007-07-04 松下電器産業株式会社 照明光源
US6946788B2 (en) 2001-05-29 2005-09-20 Toyoda Gosei Co., Ltd. Light-emitting element
JP3767420B2 (ja) 2001-05-29 2006-04-19 豊田合成株式会社 発光素子
JP4789350B2 (ja) * 2001-06-11 2011-10-12 シチズン電子株式会社 発光ダイオードの製造方法
JP4098568B2 (ja) 2001-06-25 2008-06-11 株式会社東芝 半導体発光素子及びその製造方法
JP2003017756A (ja) 2001-06-28 2003-01-17 Toyoda Gosei Co Ltd 発光ダイオード
DE10131698A1 (de) 2001-06-29 2003-01-30 Osram Opto Semiconductors Gmbh Oberflächenmontierbares strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung
JP3548735B2 (ja) 2001-06-29 2004-07-28 士郎 酒井 窒化ガリウム系化合物半導体の製造方法
JP2003037297A (ja) 2001-07-25 2003-02-07 Sanyo Electric Co Ltd 光照射装置とその製造方法及びその光照射装置を用いた照明装置
JP2003036707A (ja) 2001-07-25 2003-02-07 Sanyo Electric Co Ltd 照明装置とその製造方法
JP2003110146A (ja) 2001-07-26 2003-04-11 Matsushita Electric Works Ltd 発光装置
TW552726B (en) * 2001-07-26 2003-09-11 Matsushita Electric Works Ltd Light emitting device in use of LED
JP4122737B2 (ja) 2001-07-26 2008-07-23 松下電工株式会社 発光装置の製造方法
US20030030063A1 (en) 2001-07-27 2003-02-13 Krzysztof Sosniak Mixed color leds for auto vanity mirrors and other applications where color differentiation is critical
JP2003046117A (ja) 2001-07-30 2003-02-14 Kyocera Corp 半導体発光素子の製造方法
JP4147755B2 (ja) 2001-07-31 2008-09-10 日亜化学工業株式会社 発光装置とその製造方法
DE10137641A1 (de) 2001-08-03 2003-02-20 Osram Opto Semiconductors Gmbh Hybrid-LED
TW506145B (en) 2001-10-04 2002-10-11 United Epitaxy Co Ltd High Luminescence LED having transparent substrate flip-chip type LED die
JP3905343B2 (ja) * 2001-10-09 2007-04-18 シチズン電子株式会社 発光ダイオード
US6498355B1 (en) 2001-10-09 2002-12-24 Lumileds Lighting, U.S., Llc High flux LED array
US6610598B2 (en) 2001-11-14 2003-08-26 Solidlite Corporation Surface-mounted devices of light-emitting diodes with small lens
US6552495B1 (en) 2001-12-19 2003-04-22 Koninklijke Philips Electronics N.V. Adaptive control system and method with spatial uniform color metric for RGB LED based white light illumination
JP4077312B2 (ja) 2001-12-28 2008-04-16 株式会社東芝 発光素子の製造方法および発光素子
TW520616B (en) 2001-12-31 2003-02-11 Ritdisplay Corp Manufacturing method of organic surface light emitting device
US6480389B1 (en) * 2002-01-04 2002-11-12 Opto Tech Corporation Heat dissipation structure for solid-state light emitting device package
JP3802424B2 (ja) 2002-01-15 2006-07-26 株式会社東芝 半導体発光素子及びその製造方法
US6936855B1 (en) * 2002-01-16 2005-08-30 Shane Harrah Bendable high flux LED array
JP3782357B2 (ja) 2002-01-18 2006-06-07 株式会社東芝 半導体発光素子の製造方法
EP2262008B1 (en) 2002-01-28 2015-12-16 Nichia Corporation Nitride semiconductor element with supporting substrate and method for producing nitride semiconductor element
CN2535926Y (zh) 2002-02-08 2003-02-12 陈巧 发光二极管封装结构
JP2003234509A (ja) 2002-02-08 2003-08-22 Citizen Electronics Co Ltd 発光ダイオード
KR200277135Y1 (ko) 2002-03-04 2002-05-30 주식회사 토우그린 레이저 안개등
US6716654B2 (en) 2002-03-12 2004-04-06 Opto Tech Corporation Light-emitting diode with enhanced brightness and method for fabricating the same
SG185827A1 (en) 2002-03-22 2012-12-28 Nichia Corp Nitride phosphor and production process thereof, and light emitting device
JP2003347601A (ja) 2002-05-28 2003-12-05 Matsushita Electric Works Ltd 発光ダイオード照明装置
JP3707688B2 (ja) 2002-05-31 2005-10-19 スタンレー電気株式会社 発光装置およびその製造方法
JP2004031856A (ja) 2002-06-28 2004-01-29 Sumitomo Electric Ind Ltd ZnSe系発光装置およびその製造方法
JP4197109B2 (ja) 2002-08-06 2008-12-17 静雄 藤田 照明装置
US7244965B2 (en) 2002-09-04 2007-07-17 Cree Inc, Power surface mount light emitting die package
JP3991961B2 (ja) 2002-09-05 2007-10-17 日亜化学工業株式会社 側面発光型発光装置
TWI292961B (en) 2002-09-05 2008-01-21 Nichia Corp Semiconductor device and an optical device using the semiconductor device
JP4349782B2 (ja) 2002-09-11 2009-10-21 東芝ライテック株式会社 Led照明装置
TW546859B (en) 2002-09-20 2003-08-11 Formosa Epitaxy Inc Structure and manufacturing method of GaN light emitting diode
JP2004119839A (ja) 2002-09-27 2004-04-15 Toshiba Corp 光半導体装置及びその製造方法
JP2004127988A (ja) 2002-09-30 2004-04-22 Toyoda Gosei Co Ltd 白色発光装置
US6784460B2 (en) 2002-10-10 2004-08-31 Agilent Technologies, Inc. Chip shaping for flip-chip light emitting diode
US7009199B2 (en) 2002-10-22 2006-03-07 Cree, Inc. Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current
JP4277508B2 (ja) 2002-10-28 2009-06-10 パナソニック電工株式会社 半導体発光装置
TW569479B (en) 2002-12-20 2004-01-01 Ind Tech Res Inst White-light LED applying omnidirectional reflector
US7091653B2 (en) 2003-01-27 2006-08-15 3M Innovative Properties Company Phosphor based light sources having a non-planar long pass reflector
JP2004238441A (ja) 2003-02-04 2004-08-26 Nitto Denko Corp 光半導体素子封止用樹脂
US6786390B2 (en) 2003-02-04 2004-09-07 United Epitaxy Company Ltd. LED stack manufacturing method and its structure thereof
US6936857B2 (en) 2003-02-18 2005-08-30 Gelcore, Llc White light LED device
JP2004266124A (ja) 2003-03-03 2004-09-24 Matsushita Electric Ind Co Ltd 半導体発光装置
JP4182783B2 (ja) * 2003-03-14 2008-11-19 豊田合成株式会社 Ledパッケージ
JP4504662B2 (ja) 2003-04-09 2010-07-14 シチズン電子株式会社 Ledランプ
US6964507B2 (en) 2003-04-25 2005-11-15 Everbrite, Llc Sign illumination system
DE10319274A1 (de) * 2003-04-29 2004-12-02 Osram Opto Semiconductors Gmbh Lichtquelle
EP2264798B1 (en) 2003-04-30 2020-10-14 Cree, Inc. High powered light emitter packages with compact optics
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
US6869812B1 (en) 2003-05-13 2005-03-22 Heng Liu High power AllnGaN based multi-chip light emitting diode
JP2004356116A (ja) 2003-05-26 2004-12-16 Citizen Electronics Co Ltd 発光ダイオード
JP5142523B2 (ja) 2003-06-04 2013-02-13 チェオル ユー,ミュング 縦型構造複合半導体装置
JP4374913B2 (ja) 2003-06-05 2009-12-02 日亜化学工業株式会社 発光装置
JP3878579B2 (ja) 2003-06-11 2007-02-07 ローム株式会社 光半導体装置
JP4085899B2 (ja) 2003-06-30 2008-05-14 日立エーアイシー株式会社 発光デバイス用基板および発光デバイス
DE102004001312B4 (de) 2003-07-25 2010-09-30 Seoul Semiconductor Co., Ltd. Chip-Leuchtdiode und Verfahren zu ihrer Herstellung
JP4360858B2 (ja) 2003-07-29 2009-11-11 シチズン電子株式会社 表面実装型led及びそれを用いた発光装置
US6923002B2 (en) 2003-08-28 2005-08-02 General Electric Company Combustion liner cap assembly for combustion dynamics reduction
US6806112B1 (en) 2003-09-22 2004-10-19 National Chung-Hsing University High brightness light emitting diode
JP2005109212A (ja) 2003-09-30 2005-04-21 Stanley Electric Co Ltd 半導体発光装置
JP4817845B2 (ja) 2003-09-30 2011-11-16 株式会社東芝 発光装置の製造方法
US6972438B2 (en) 2003-09-30 2005-12-06 Cree, Inc. Light emitting diode with porous SiC substrate and method for fabricating
KR20050034936A (ko) 2003-10-10 2005-04-15 삼성전기주식회사 형광체를 이용한 파장변환형 발광 다이오드 패키지 및제조방법
JP2005123238A (ja) 2003-10-14 2005-05-12 Matsushita Electric Ind Co Ltd 半導体発光装置の製造方法および半導体発光装置
US20050082562A1 (en) 2003-10-15 2005-04-21 Epistar Corporation High efficiency nitride based light emitting device
JP4458804B2 (ja) 2003-10-17 2010-04-28 シチズン電子株式会社 白色led
US6841804B1 (en) 2003-10-27 2005-01-11 Formosa Epitaxy Incorporation Device of white light-emitting diode
JP4590905B2 (ja) 2003-10-31 2010-12-01 豊田合成株式会社 発光素子および発光装置
JP2005142311A (ja) 2003-11-06 2005-06-02 Tzu-Chi Cheng 発光装置
JP4124102B2 (ja) 2003-11-12 2008-07-23 松下電工株式会社 多重反射防止構造を備えた発光素子とその製造方法
EP1686629B1 (en) 2003-11-19 2018-12-26 Nichia Corporation Nitride semiconductor light emitting diode and method for manufacturing the same
JP2005166937A (ja) 2003-12-02 2005-06-23 Toyoda Gosei Co Ltd 発光装置
JP2005166941A (ja) 2003-12-02 2005-06-23 Matsushita Electric Ind Co Ltd 発光装置およびその製造方法、並びにその発光装置を用いた照明モジュールと照明装置
JP2005191530A (ja) 2003-12-03 2005-07-14 Sumitomo Electric Ind Ltd 発光装置
JP2005167079A (ja) 2003-12-04 2005-06-23 Toyoda Gosei Co Ltd 発光装置
US7095056B2 (en) 2003-12-10 2006-08-22 Sensor Electronic Technology, Inc. White light emitting device and method
JP4289144B2 (ja) 2003-12-15 2009-07-01 シチズン電子株式会社 発光ダイオード
US7066623B2 (en) 2003-12-19 2006-06-27 Soo Ghee Lee Method and apparatus for producing untainted white light using off-white light emitting diodes
JP2005191192A (ja) 2003-12-25 2005-07-14 Kyocera Corp 発光素子搭載用基板および発光装置
JP4637478B2 (ja) 2003-12-26 2011-02-23 日本パイオニクス株式会社 気相成長装置
JP4622253B2 (ja) 2004-01-22 2011-02-02 日亜化学工業株式会社 発光デバイス及びその製造方法
JP4530739B2 (ja) 2004-01-29 2010-08-25 京セラ株式会社 発光素子搭載用基板および発光装置
JP2005268770A (ja) 2004-02-19 2005-09-29 Matsushita Electric Ind Co Ltd 白色発光素子及び白色光源
JP2005266124A (ja) 2004-03-17 2005-09-29 Sharp Corp 粉体排出装置及び画像形成装置
US7009285B2 (en) 2004-03-19 2006-03-07 Lite-On Technology Corporation Optoelectronic semiconductor component
US7517728B2 (en) 2004-03-31 2009-04-14 Cree, Inc. Semiconductor light emitting devices including a luminescent conversion element
US7419912B2 (en) 2004-04-01 2008-09-02 Cree, Inc. Laser patterning of light emitting devices
JP2005294736A (ja) 2004-04-05 2005-10-20 Stanley Electric Co Ltd 半導体発光装置の製造方法
JP4228303B2 (ja) 2004-04-12 2009-02-25 住友電気工業株式会社 半導体発光素子搭載部材と、それを用いた半導体発光装置
JP4665209B2 (ja) 2004-04-15 2011-04-06 スタンレー電気株式会社 平面照射型led
US7777241B2 (en) 2004-04-15 2010-08-17 The Trustees Of Boston University Optical devices featuring textured semiconductor layers
JP4128564B2 (ja) 2004-04-27 2008-07-30 松下電器産業株式会社 発光装置
US7315119B2 (en) 2004-05-07 2008-01-01 Avago Technologies Ip (Singapore) Pte Ltd Light-emitting device having a phosphor particle layer with specific thickness
KR100658700B1 (ko) 2004-05-13 2006-12-15 서울옵토디바이스주식회사 Rgb 발광소자와 형광체를 조합한 발광장치
KR100586968B1 (ko) 2004-05-28 2006-06-08 삼성전기주식회사 Led 패키지 및 이를 구비한 액정표시장치용 백라이트어셈블리
JP2005353816A (ja) 2004-06-10 2005-12-22 Olympus Corp 発光デバイス、発光デバイスの製造方法、発光デバイスを用いた照明装置、及び、プロジェクタ
EP1761958A2 (en) 2004-06-18 2007-03-14 Philips Intellectual Property & Standards GmbH Led with improved light emittance profile
US7795623B2 (en) 2004-06-30 2010-09-14 Cree, Inc. Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
US7255469B2 (en) 2004-06-30 2007-08-14 3M Innovative Properties Company Phosphor based illumination system having a light guide and an interference reflector
WO2006006555A1 (ja) 2004-07-12 2006-01-19 Rohm Co., Ltd. 半導体発光素子
TWI274209B (en) 2004-07-16 2007-02-21 Chi Lin Technology Co Ltd Light emitting diode and backlight module having light emitting diode
JP2006036930A (ja) 2004-07-27 2006-02-09 Nitto Denko Corp 光半導体素子封止用樹脂
JP4817629B2 (ja) 2004-09-15 2011-11-16 京セラ株式会社 発光素子およびその発光素子を用いた照明装置
KR100524098B1 (ko) 2004-09-10 2005-10-26 럭스피아 주식회사 반도체 발광장치 및 그 제조방법
US7217583B2 (en) 2004-09-21 2007-05-15 Cree, Inc. Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US8513686B2 (en) 2004-09-22 2013-08-20 Cree, Inc. High output small area group III nitride LEDs
US7633097B2 (en) 2004-09-23 2009-12-15 Philips Lumileds Lighting Company, Llc Growth of III-nitride light emitting devices on textured substrates
JP4121536B2 (ja) 2004-09-27 2008-07-23 松下電器産業株式会社 半導体発光素子、その製造方法及びその実装方法、並びに発光装置
JP2006114909A (ja) 2004-10-14 2006-04-27 Agilent Technol Inc フラッシュ・モジュール
US7462502B2 (en) 2004-11-12 2008-12-09 Philips Lumileds Lighting Company, Llc Color control by alteration of wavelength converting element
US7419839B2 (en) 2004-11-12 2008-09-02 Philips Lumileds Lighting Company, Llc Bonding an optical element to a light emitting device
US7858408B2 (en) 2004-11-15 2010-12-28 Koninklijke Philips Electronics N.V. LED with phosphor tile and overmolded phosphor in lens
US7344902B2 (en) 2004-11-15 2008-03-18 Philips Lumileds Lighting Company, Llc Overmolded lens over LED die
KR100638666B1 (ko) 2005-01-03 2006-10-30 삼성전기주식회사 질화물 반도체 발광소자
US7413918B2 (en) 2005-01-11 2008-08-19 Semileds Corporation Method of making a light emitting diode
JP2006216717A (ja) 2005-02-02 2006-08-17 Harvatek Corp ウエハーレベル電気光学半導体組立構造およびその製造方法
JP4715227B2 (ja) 2005-02-21 2011-07-06 パナソニック株式会社 半導体発光装置の製造方法
EP1861876A1 (en) 2005-03-24 2007-12-05 Tir Systems Ltd. Solid-state lighting device package
JP2006278675A (ja) 2005-03-29 2006-10-12 Toshiba Corp 半導体発光装置
US7244630B2 (en) 2005-04-05 2007-07-17 Philips Lumileds Lighting Company, Llc A1InGaP LED having reduced temperature dependence
WO2006112417A1 (ja) * 2005-04-15 2006-10-26 Asahi Glass Company, Limited ガラス封止発光素子、ガラス封止発光素子付き回路基板およびそれらの製造方法
TW200707799A (en) 2005-04-21 2007-02-16 Aonex Technologies Inc Bonded intermediate substrate and method of making same
TWM277882U (en) 2005-05-31 2005-10-11 Sheng-Li Yang Diffusion type light source structure
JP2006339362A (ja) 2005-06-01 2006-12-14 Ngk Spark Plug Co Ltd 発光素子実装用配線基板
US7348212B2 (en) 2005-09-13 2008-03-25 Philips Lumileds Lighting Company Llc Interconnects for semiconductor light emitting devices
KR100638868B1 (ko) 2005-06-20 2006-10-27 삼성전기주식회사 금속 반사 층을 형성한 엘이디 패키지 및 그 제조 방법
JP2007005091A (ja) 2005-06-22 2007-01-11 Mitsubishi Rayon Co Ltd 線状発光素子アレイ
JP2007080885A (ja) 2005-09-09 2007-03-29 New Japan Chem Co Ltd 光半導体用封止剤、光半導体及びその製造方法
DE102006032416A1 (de) 2005-09-29 2007-04-05 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement
JP4863682B2 (ja) 2005-10-17 2012-01-25 日東電工株式会社 光半導体素子封止用シート
US7514721B2 (en) 2005-11-29 2009-04-07 Koninklijke Philips Electronics N.V. Luminescent ceramic element for a light emitting device
US7213940B1 (en) 2005-12-21 2007-05-08 Led Lighting Fixtures, Inc. Lighting device and lighting method
US7915619B2 (en) 2005-12-22 2011-03-29 Showa Denko K.K. Light-emitting diode and method for fabrication thereof
JP2009527071A (ja) 2005-12-22 2009-07-23 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド 照明装置
JP2007180430A (ja) 2005-12-28 2007-07-12 Toshiba Lighting & Technology Corp 発光ダイオード装置
JP5357379B2 (ja) 2006-02-23 2013-12-04 パナソニック株式会社 発光装置
SG170031A1 (en) 2006-02-23 2011-04-29 Azzurro Semiconductors Ag Nitride semiconductor component and process for its production
US7682850B2 (en) 2006-03-17 2010-03-23 Philips Lumileds Lighting Company, Llc White LED for backlight with phosphor plates
US7364338B2 (en) 2006-03-29 2008-04-29 Tpo Displays Corp. Systems for providing backlight module with stacked light source
JP2007273763A (ja) 2006-03-31 2007-10-18 Sony Corp 半導体装置およびその製造方法
JP2009534866A (ja) 2006-04-24 2009-09-24 クリー, インコーポレイティッド 横向き平面実装白色led
TWI306674B (en) 2006-04-28 2009-02-21 Delta Electronics Inc Light emitting apparatus
US8080828B2 (en) 2006-06-09 2011-12-20 Philips Lumileds Lighting Company, Llc Low profile side emitting LED with window layer and phosphor layer
US7626210B2 (en) 2006-06-09 2009-12-01 Philips Lumileds Lighting Company, Llc Low profile side emitting LED
KR100809210B1 (ko) 2006-07-10 2008-02-29 삼성전기주식회사 고출력 led 패키지 및 그 제조방법
JP4458116B2 (ja) 2007-05-30 2010-04-28 住友電気工業株式会社 エピタキシャル層成長用iii族窒化物半導体層貼り合わせ基板および半導体デバイス
DE102007046743A1 (de) 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement sowie Verfahren zu dessen Herstellung
US20090173958A1 (en) 2008-01-04 2009-07-09 Cree, Inc. Light emitting devices with high efficiency phospor structures
JP5388666B2 (ja) 2008-04-21 2014-01-15 キヤノン株式会社 面発光レーザ
JP5371375B2 (ja) 2008-10-30 2013-12-18 三菱レイヨン・テキスタイル株式会社 ワイピング用布帛
US20110018013A1 (en) 2009-07-21 2011-01-27 Koninklijke Philips Electronics N.V. Thin-film flip-chip series connected leds
WO2011143197A2 (en) 2010-05-13 2011-11-17 Cree, Inc. Lighting device and method of making
US9240395B2 (en) 2010-11-30 2016-01-19 Cree Huizhou Opto Limited Waterproof surface mount device package and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI583086B (zh) * 2016-07-18 2017-05-11 華星光通科技股份有限公司 光發射器散熱結構及包含其的光發射器

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