JP5372766B2 - 光取り出し効率の高い球形led - Google Patents
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Description
本出願は、米国特許法第119条(e)項に基づいて、本発明の譲受人に譲渡された同時係属中の、スティーブン・P.デンバース(Steven P.DenBaars)らによる、米国特許仮出願第60/866,025号、出願日2006年11月15日、発明の名称「光取り出し効率の高い球形LED(HIGH LIGHT EXTRACTION EFFICIENCY SPHERE LED)」の優先権を主張し、該出願を参照により本明細書に組み込む。
村井 章彦、クリスティーナ・イェ・チェン、ダニエル・B.トンプソン、リー・S.マッカーシー、スティーブン・P.デンバース、シュウジ・ナカムラ、およびウメシュ・K.ミシュラによる、米国特許仮出願第60/764,881号、出願日2006年2月3日、発明の名称「光電子応用のための(Al,Ga,In)NおよびZnOの直接ウェーハ・ボンディング構造とその作製方法((Al,Ga,In)N AND ZnO DIRECT WAFER BONDING STRUCTURE FOR OPTOELECTRONIC APPLICATIONS AND ITS FABRICATION METHOD)」、代理人整理番号30794.134−US−P3(2005−536−3)。
スティーブン・P.デンバース、シュウジ・ナカムラ、およびジェームス・S.スペックによる、米国特許仮出願第60/764,975号、出願日2006年2月3日、発明の名称「高効率発光ダイオード(LED)(HIGH EFFICIENCY LIGHT EMITTING DIODE(LED))」、代理人整理番号30794.164−US−P2(2006−318−2)。
オーレリアン・J.F.デーヴィッド、クロード・C.A.ワイズバッシュ、およびスティーブン・P.デンバースによる、米国特許仮出願第60/883,977号、出願日2007年1月8日、発明の名称「複数の取り出し器を通した光取り出し効率の高い発光ダイオード(LED)(HIGH LIGHT EXTRACTION EFFICIENCY LIGHT EMITTING DIODE(LED) THROUGH MULTIPLE EXTRACTORS)」、代理人整理番号30794.191−US−P2(2007−047−2)。
これらの出願は全て参照により本明細書に組み込まれる。
本発明は、光電子応用のためのLEDの光取り出し及び高視感度効率を有する白色LEDに関する。より具体的には、本発明は、(Al,Ga,In)NのLED、および放出される光を全方向で取り出すための球形のパッケージと結合した光取り出し構造に関する。全体的な効果は、卓越した視感度効率および高出力を持つデバイスを実現することである。
2.関連技術の説明
(注:本出願は、本明細書全体を通して示される多数の様々な刊行物を参照する。これらの様々な刊行物の一覧は、以下の「参考文献」の項に見出すことが出来る。これらの刊行物はそれぞれ、参照により本明細書に組み込まれる。)
従来の発光ダイオード(LED)では、LEDの前側について光出力を増加させるために、発光を、サファイヤ基板の裏側上の鏡によって反射させるか、または、ボンディング材料がその発光波長で透明な場合には、鏡被覆膜をリード・フレーム上に置いて反射させる。光子エネルギーはAlInGaN多重量子井戸(MQW)の量子井戸のバンドギャップ・エネルギーとほとんど同じであるので、この反射光は発光層(活性層)によって再吸収される場合が多い。このように、LEDの効率または出力は、発光層によるLED光の再吸収によって低減する。図2および3を参照のこと。p型層の上側から、半透明な薄い金属、即ちITOまたはZnOの透明電極が、光取り出し効率の改善のために用いられた。(ジャパニーズ・ジャーナル・オブ・アプライド・フィジックス(J.J.Appl.Phys.)、34巻、ページL797〜99(1995年))、(ジャパニーズ・ジャーナル・オブ・アプライド・フィジックス(J.J.Appl.Phys.)、43巻、ページL180〜82(2004年))。
本発明は、球形成形物により成形物内の内部反射を最小化する高効率のLEDを記述する。LEDを点光源と見なし、球形成形物のサイズがLEDチップに比べて大きい場合、LED光ビームの方向は、球形成形物の表面にほぼ垂直である。このとき、LEDから放出される光は全て、球形成形物から空気中へ取り出される。従来のLEDでは、図2〜4に示すように、成形物の形状が球形ではないので、LED光の一部は、エポキシの成形物と空気との界面で屈折率の差によって反射される。成形物の形状不良のために光取り出し効率が悪くなるため、この反射によってLEDの効率または出力が低減する。
図1〜16では、LED構造の詳細は必ずしも示されていない。発光層(通常はAlInGaNのMQW)、p型GaN、n型GaN、および基板のみが示されている。通常のLED構造では、p型AlGaN電子ブロッキング層、InGaN/GaN超格子などの他の層が存在する。光取り出し効率は、主にエピタキシャル・ウェーハの表面層または表面状態によって決まるので、ここで、最も大事な部分は、LEDチップの表面である。それゆえに、LEDチップのこれら動作部分のみを図に示す。
本発明は、球形であることを特徴とする成形物の内部反射を最小化することによる高効率のLEDを記述している。LEDが点光源であると近似できるようにエポキシとLEDとをパッケージングすることによって、LEDからの光ビームの全ての方向が、結局は、球形のレンズ成形物の表面に垂直になるように向く。
次の参考文献は参照により本明細書に組み込まれる。
2. Appl.Phys.Lett.64,2839−41(1994)
3. Appl.Phys.Lett.81,3152−54(2002)
4. Jpn.J.Appl.Phys.43,L1275−77(2004)
5. Jpn.J.Appl.Physics,45,No.41,L1084−L1086(2006)
6. Fujii T,Gao Y,Sharma R,Hu EL, DenBaars SP,Nakamura S.Increase in the extraction efficiency of GaN−based light−emitting diodes via surface roughening.Applied Physics Letters,vol.84,no.6,9 Feb.2004,pp.855−7.Publisher:AIP,USA
結論
本発明は、発光ダイオードを記述している。本発明によるLEDは、少なくとも第1の発光波長で光を放出するLEDチップと、該LEDチップを取り囲むパッケージを備え、該パッケージはほぼ球形であることを特徴とする。
Claims (20)
- 少なくとも第1の発光波長で前側と裏側から光を放出するLEDチップと、
前記LEDチップが取り付けられるリード・フレームであって、前記LEDチップは該リード・フレーム内の透明な板上に存在し、前記LEDチップの前側と裏側の両側から前記光が取り出され、前記LEDチップの裏側からの光は該透明の板および該リード・フレームを通して前記LEDチップから取り出されることを特徴とする該リード・フレームと、
前記リード・フレームに取り付けられ、前記LEDチップの前側と裏側の両側から前記光を取り出す前記LEDチップを取り囲むほぼ球形のパッケージとを備えた発光ダイオード(LED)。 - 前記LEDチップは、前記パッケージのほぼ中心に位置づけられることを特徴とする請求項1に記載のLED。
- 前記パッケージは、前記LEDチップの前記第1の発光波長で透明な材料から作られていることを特徴とする請求項1に記載のLED。
- 透明な導電体層が、前記LEDチップのp型AlGaInN層上に配置されることを特徴とする請求項1に記載のLED。
- 前記透明な導電体層は、酸化インジウム錫(ITO)および酸化亜鉛(ZnO)を含むグループの中から選択された材料から出来ていることを特徴とする請求項4に記載のLED。
- 前記透明な導電体層の表面は粗面であることを特徴とする請求項4に記載のLED。
- 前記透明な導電体層の前に、前記電流拡散層が成膜されることを特徴とする請求項4に記載のLED。
- 前記電流拡散層は、SiO2 、SiN、および他の絶縁性材料を含むグループの中から選択された材料から作られていることを特徴とする請求項7に記載のLED。
- 前記LEDチップの少なくとも一つの表面は粗面であることを特徴とする請求項1に記載のLED。
- 前記LEDチップは、サファイヤ基板の裏側が前記サファイヤ基板を介した光の取り出しを増加させるために粗面化されることを特徴とする前記サファイヤ基板上に作製されることを特徴とする請求項1に記載のLED。
- 前記パッケージに結合した蛍光剤層を更に含み、前記蛍光剤層は、前記蛍光剤層を介した光の取り出しを向上させるために粗面化されることを特徴とする請求項1に記載のLED。
- 前記LEDチップは、(Al,Ga,In)N材料系、(Al,Ga,In)As材料系、(Al,Ga,In)P材料系、(Al,Ga,In)AsPNSb材料系、ZnGeN 2 材料系、およびZnSnGeN 2 材料系を含むグループの中から選択された材料から作られていることを特徴とする請求項1に記載のLED。
- 前記LEDチップと光学的に結合した鏡を更に備え、前記LEDチップの片側から放出される光が、前記LEDチップの他の側から放出される光とほぼ方向が合うように反射されることを特徴とする請求項1に記載のLED。
- 活性層と、第1の方向への光の放出のために繊維模様のついた表面層とを備えたLEDチップからなるIII 族窒化物ベースの発光源と、
前記光が前記LEDチップの前側と裏側から放出されるような、前記繊維模様のついた表面層とは反対側にあって、前記第1の方向とはほぼ反対の第2の方向への光の放出のための第2の表面層と、
前記LEDチップが取り付けられるリード・フレームであって、前記LEDチップは該リード・フレーム内の透明な板上に存在し、前記LEDチップの前側と裏側の両側から前記光が取り出され、前記LEDチップの裏側からの光は該透明の板および該リード・フレームを介して前記LEDチップから取り出されることを特徴とする該リード・フレームと、
前記III 族窒化物ベースの発光源を取り囲む封止材料であって、前記封止材料は、前記LEDチップの前側と裏側から前記光が取り出されるようなほぼ球形であり、前記封止材料の直径は、前記III 族窒化物ベースの発光源の幅よりもかなり大きいことを特徴とする封止材料とを備えた発光ダイオード(LED)。 - 前記第2の表面層には繊維模様がついていることを特徴とする請求項14に記載のLED。
- 前記封止材料と結合した蛍光剤層を更に備え、前記LEDチップから放出された光が、前記蛍光剤を励起することを特徴とする請求項15に記載のLED。
- 前記活性層と結合した透明な導電性の層を更に備え、前記活性層は、前記透明な導電性の層を通して光を放出することを特徴とする請求項14に記載のLED。
- 前記透明な導電性の層は、酸化インジウム錫と酸化亜鉛を含むグループの中から選択された材料から作られていることを特徴とする請求項17に記載のLED。
- 前記リード・フレーム内の前記透明な板は、前記LEDチップの裏側からの光取り出しを向上させるための支持ガラス板であることを特徴とする請求項1または14に記載のLED。
- 前記球形の表面は、前記球形表面を通した光の取り出しを増大させるために粗面化されていることを特徴とする請求項1または14に記載のLED。
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- 2007-11-15 US US11/940,872 patent/US20080121918A1/en not_active Abandoned
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