SG11201401585RA - Polishing pad and method for producing same - Google Patents

Polishing pad and method for producing same

Info

Publication number
SG11201401585RA
SG11201401585RA SG11201401585RA SG11201401585RA SG11201401585RA SG 11201401585R A SG11201401585R A SG 11201401585RA SG 11201401585R A SG11201401585R A SG 11201401585RA SG 11201401585R A SG11201401585R A SG 11201401585RA SG 11201401585R A SG11201401585R A SG 11201401585RA
Authority
SG
Singapore
Prior art keywords
polishing pad
producing same
producing
same
polishing
Prior art date
Application number
SG11201401585RA
Other languages
English (en)
Inventor
Kouki ITOYAMA
Fumio Miyazawa
Original Assignee
Fujibo Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujibo Holdings Inc filed Critical Fujibo Holdings Inc
Publication of SG11201401585RA publication Critical patent/SG11201401585RA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/08—Processes
    • C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/30—Low-molecular-weight compounds
    • C08G18/32—Polyhydroxy compounds; Polyamines; Hydroxyamines
    • C08G18/3203—Polyhydroxy compounds
    • C08G18/3206—Polyhydroxy compounds aliphatic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/30—Low-molecular-weight compounds
    • C08G18/38—Low-molecular-weight compounds having heteroatoms other than oxygen
    • C08G18/3802—Low-molecular-weight compounds having heteroatoms other than oxygen having halogens
    • C08G18/3814—Polyamines
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40—High-molecular-weight compounds
    • C08G18/48—Polyethers
    • C08G18/4854—Polyethers containing oxyalkylene groups having four carbon atoms in the alkylene group
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
    • C08G18/72—Polyisocyanates or polyisothiocyanates
    • C08G18/74—Polyisocyanates or polyisothiocyanates cyclic
    • C08G18/76—Polyisocyanates or polyisothiocyanates cyclic aromatic
    • C08G18/7614—Polyisocyanates or polyisothiocyanates cyclic aromatic containing only one aromatic ring
    • C08G18/7621—Polyisocyanates or polyisothiocyanates cyclic aromatic containing only one aromatic ring being toluene diisocyanate including isomer mixtures
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2101/00—Manufacture of cellular products
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2110/00—Foam properties
    • C08G2110/0041—Foam properties having specified density
    • C08G2110/0066—≥ 150kg/m3
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/002—Physical properties
    • C08K2201/005—Additives being defined by their particle size in general
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polyurethanes Or Polyureas (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
SG11201401585RA 2011-10-18 2012-10-12 Polishing pad and method for producing same SG11201401585RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011228987A JP5945874B2 (ja) 2011-10-18 2011-10-18 研磨パッド及びその製造方法
PCT/JP2012/076441 WO2013058183A1 (ja) 2011-10-18 2012-10-12 研磨パッド及びその製造方法

Publications (1)

Publication Number Publication Date
SG11201401585RA true SG11201401585RA (en) 2014-09-26

Family

ID=48140831

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201401585RA SG11201401585RA (en) 2011-10-18 2012-10-12 Polishing pad and method for producing same

Country Status (9)

Country Link
US (1) US9149905B2 (ja)
EP (1) EP2806453B1 (ja)
JP (1) JP5945874B2 (ja)
KR (1) KR101984336B1 (ja)
CN (1) CN103930975B (ja)
IL (1) IL231935A0 (ja)
SG (1) SG11201401585RA (ja)
TW (1) TWI553108B (ja)
WO (1) WO2013058183A1 (ja)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8702479B2 (en) 2010-10-15 2014-04-22 Nexplanar Corporation Polishing pad with multi-modal distribution of pore diameters
US20150038066A1 (en) * 2013-07-31 2015-02-05 Nexplanar Corporation Low density polishing pad
US9102034B2 (en) * 2013-08-30 2015-08-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate
JP2015059199A (ja) * 2013-09-20 2015-03-30 Dic株式会社 ウレタン組成物及び研磨材
US9421666B2 (en) * 2013-11-04 2016-08-23 Applied Materials, Inc. Printed chemical mechanical polishing pad having abrasives therein
JP6434266B2 (ja) * 2013-12-17 2018-12-05 富士紡ホールディングス株式会社 ラッピング用樹脂定盤及びそれを用いたラッピング方法
JP6311183B2 (ja) * 2014-03-31 2018-04-18 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
JP6292397B2 (ja) * 2014-04-23 2018-03-14 富士紡ホールディングス株式会社 研磨パッド
US9238294B2 (en) * 2014-06-18 2016-01-19 Nexplanar Corporation Polishing pad having porogens with liquid filler
WO2016017797A1 (ja) * 2014-08-01 2016-02-04 積水化学工業株式会社 難燃性ポリウレタン樹脂組成物
US9586304B2 (en) * 2014-12-19 2017-03-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Controlled-expansion CMP PAD casting method
US9452507B2 (en) * 2014-12-19 2016-09-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Controlled-viscosity CMP casting method
US9481070B2 (en) * 2014-12-19 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-stability polyurethane polishing pad
US10946495B2 (en) * 2015-01-30 2021-03-16 Cmc Materials, Inc. Low density polishing pad
CN107107307B (zh) * 2015-03-30 2020-06-26 霓达杜邦股份有限公司 研磨垫
JP6600149B2 (ja) * 2015-04-03 2019-10-30 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
JP2016196067A (ja) * 2015-04-03 2016-11-24 富士紡ホールディングス株式会社 研磨パッド
JP6498498B2 (ja) * 2015-04-03 2019-04-10 富士紡ホールディングス株式会社 研磨パッド
JP6773465B2 (ja) * 2015-06-26 2020-10-21 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド ケミカルメカニカル研磨パッド複合研磨層調合物
US9868185B2 (en) 2015-11-03 2018-01-16 Cabot Microelectronics Corporation Polishing pad with foundation layer and window attached thereto
US20180356167A1 (en) * 2015-12-17 2018-12-13 Toyo Tire & Rubber Co., Ltd. Thermoresponsive material, method for producing thermoresponsive material, and heat control device
JP6732382B2 (ja) * 2016-10-12 2020-07-29 株式会社ディスコ 加工装置及び被加工物の加工方法
US10813444B2 (en) * 2018-05-16 2020-10-27 Jh Rhodes Company, Inc. Porous polymeric polishing bristles and methods for their manufacture
JP6929060B2 (ja) * 2016-12-28 2021-09-01 スリーエム イノベイティブ プロパティズ カンパニー 研磨材及びその製造方法
EP3604412B1 (en) * 2017-03-31 2022-06-29 Sekisui Chemical Co., Ltd. Foam and molded article
US11524390B2 (en) * 2017-05-01 2022-12-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Methods of making chemical mechanical polishing layers having improved uniformity
KR102338854B1 (ko) * 2017-08-31 2021-12-15 후베이 딩후이 마이크로일렉트로닉스 머티리얼즈 코., 엘티디 폴리우레탄 연마층, 연마층을 포함하는 연마 패드, 연마층의 제조 방법 및 재료 평탄화 방법
JP7137301B2 (ja) * 2017-09-29 2022-09-14 富士紡ホールディングス株式会社 研磨パッド
CN108161713B (zh) * 2017-12-15 2020-06-12 湖北鼎龙控股股份有限公司 一种抛光垫及用于制备抛光垫的方法
JP7259311B2 (ja) * 2017-12-26 2023-04-18 Dic株式会社 研磨パッド及び研磨パッド用ウレタン樹脂組成物
JP6971839B2 (ja) * 2017-12-27 2021-11-24 ニッタ・デュポン株式会社 研磨パッド
CN111542416B (zh) * 2017-12-27 2022-10-21 霓达杜邦股份有限公司 研磨垫
JP7099827B2 (ja) * 2018-01-26 2022-07-12 ニッタ・デュポン株式会社 研磨パッド
JP7349774B2 (ja) * 2018-03-09 2023-09-25 富士紡ホールディングス株式会社 研磨パッド、研磨パッドの製造方法、被研磨物の表面を研磨する方法、被研磨物の表面を研磨する際のスクラッチを低減する方法
JP2019160996A (ja) * 2018-03-13 2019-09-19 東芝メモリ株式会社 研磨パッド、半導体製造装置、および半導体装置の製造方法
JP7141230B2 (ja) * 2018-03-30 2022-09-22 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
KR20210058835A (ko) * 2018-09-28 2021-05-24 후지보 홀딩스 가부시키가이샤 연마 패드 및 연마 가공물의 제조 방법
JP2020055101A (ja) * 2018-09-28 2020-04-09 富士紡ホールディングス株式会社 研磨パッド及び研磨加工物の製造方法
JP7123722B2 (ja) * 2018-09-28 2022-08-23 富士紡ホールディングス株式会社 研磨パッド
JP7438658B2 (ja) * 2018-09-28 2024-02-27 富士紡ホールディングス株式会社 研磨パッド及び研磨加工物の製造方法
CN109254027A (zh) * 2018-11-01 2019-01-22 西南石油大学 一种基于低场核磁共振的泥饼封堵评价装置及评价方法
KR102141743B1 (ko) * 2018-12-18 2020-08-05 에스케이씨 주식회사 연마층의 제조방법, 연마층 제조용 분급장치 및 이를 포함하는 연마층의 제조장치
JP7302168B2 (ja) * 2018-12-20 2023-07-04 Dic株式会社 ウレタン樹脂組成物、及び、研磨パッド
JP7137504B2 (ja) * 2019-03-27 2022-09-14 富士紡ホールディングス株式会社 研磨パッド、研磨パッドの製造方法、光学材料又は半導体材料の表面を研磨する方法、及び研磨パッドの評価方法
JP7137503B2 (ja) * 2019-03-27 2022-09-14 富士紡ホールディングス株式会社 研磨パッド
JP7137505B2 (ja) * 2019-03-27 2022-09-14 富士紡ホールディングス株式会社 研磨パッド、研磨パッドの製造方法、光学材料又は半導体材料の表面を研磨する方法、及び研磨パッドの評価方法
KR102293801B1 (ko) * 2019-11-28 2021-08-25 에스케이씨솔믹스 주식회사 연마패드, 이의 제조방법 및 이를 이용한 반도체 소자의 제조방법
IL293614A (en) * 2019-12-11 2022-08-01 Tokuyama Corp A microballoon with an ionic group and its production method
KR102423956B1 (ko) * 2020-09-07 2022-07-21 에스케이씨솔믹스 주식회사 연마 패드, 연마 패드의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법
EP3967452A1 (en) * 2020-09-07 2022-03-16 SKC Solmics Co., Ltd. Polishing pad and method of fabricating semiconductor device using the same
KR102420673B1 (ko) * 2020-09-29 2022-07-13 에스케이씨솔믹스 주식회사 연마 패드, 연마 패드의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법
KR102512675B1 (ko) * 2020-12-30 2023-03-21 에스케이엔펄스 주식회사 연마 패드, 연마 패드의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법
WO2022210037A1 (ja) * 2021-03-30 2022-10-06 富士紡ホールディングス株式会社 研磨パッド及び研磨パッドの製造方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE439599B (sv) 1981-01-14 1985-06-24 Kema Nord Ab Sett att torka och expandera i vetska dispergerade, termoplastiska mikrosferer innehallande, flyktiga, flytande jesmedel
JPH106211A (ja) 1996-06-26 1998-01-13 Asahi Glass Co Ltd 研磨パッドおよび板状材の研磨方法
US6454633B1 (en) * 1997-04-04 2002-09-24 Rodel Holdings Inc. Polishing pads of flocked hollow fibers and methods relating thereto
JP3924952B2 (ja) 1998-10-13 2007-06-06 東レ株式会社 研磨装置および研磨パッド
US6454634B1 (en) * 2000-05-27 2002-09-24 Rodel Holdings Inc. Polishing pads for chemical mechanical planarization
JP2002124491A (ja) * 2000-08-10 2002-04-26 Toray Ind Inc 研磨パッド
JP3788729B2 (ja) 2000-08-23 2006-06-21 東洋ゴム工業株式会社 研磨パッド
US7059946B1 (en) * 2000-11-29 2006-06-13 Psiloquest Inc. Compacted polishing pads for improved chemical mechanical polishing longevity
US20020098789A1 (en) * 2001-01-19 2002-07-25 Peter A. Burke Polishing pad and methods for improved pad surface and pad interior characteristics
US6764574B1 (en) * 2001-03-06 2004-07-20 Psiloquest Polishing pad composition and method of use
KR100845481B1 (ko) 2001-11-13 2008-07-10 도요 고무 고교 가부시키가이샤 연마 패드 및 그 제조 방법
JP3494641B1 (ja) * 2001-12-12 2004-02-09 東洋紡績株式会社 半導体ウエハ研磨用研磨パッド
KR100467765B1 (ko) * 2002-02-04 2005-01-24 에스케이씨 주식회사 고경도 및 우수한 내마모성을 갖는 폴리우레탄 탄성체제조용 조성물
JP3983610B2 (ja) 2002-07-02 2007-09-26 株式会社クラレ 熱可塑性ポリウレタン発泡体およびそれからなる研磨パッド
US20040058623A1 (en) * 2002-09-20 2004-03-25 Lam Research Corporation Polishing media for chemical mechanical planarization (CMP)
US7704125B2 (en) * 2003-03-24 2010-04-27 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
US8864859B2 (en) * 2003-03-25 2014-10-21 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
JP4338150B2 (ja) 2003-10-17 2009-10-07 東レ株式会社 発泡ポリウレタンおよびその製造方法
JP2006114885A (ja) * 2004-09-17 2006-04-27 Jsr Corp 化学機械研磨パッド及び化学機械研磨方法
DE602005007125D1 (de) * 2004-09-17 2008-07-10 Jsr Corp Chemisch-mechanisches Polierkissen und chemisch-mechanisches Polierverfahren
US20060089093A1 (en) 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089094A1 (en) 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US7048610B1 (en) * 2005-01-26 2006-05-23 Intel Corporation Conditioning polishing pad for chemical-mechanical polishing
TWI385050B (zh) * 2005-02-18 2013-02-11 Nexplanar Corp 用於ｃｍｐ之特製拋光墊及其製造方法及其用途
JP5193595B2 (ja) * 2005-09-22 2013-05-08 株式会社クラレ 高分子材料、それから得られる発泡体及びこれらを用いた研磨パッド
JP5031236B2 (ja) * 2006-01-10 2012-09-19 東洋ゴム工業株式会社 研磨パッド
JP2007238783A (ja) 2006-03-09 2007-09-20 Mitsui Chemicals Inc 発泡体
JP2008126363A (ja) * 2006-11-21 2008-06-05 Nippon Polyurethane Ind Co Ltd ポリウレタン研磨パッドの製造方法
US7438636B2 (en) * 2006-12-21 2008-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
JP5234916B2 (ja) * 2007-01-30 2013-07-10 東レ株式会社 積層研磨パッド
JP2009256473A (ja) 2008-04-17 2009-11-05 Nitta Haas Inc 発泡ポリウレタンの製造方法および研磨パッド
KR101410116B1 (ko) * 2008-08-08 2014-06-25 가부시키가이샤 구라레 연마 패드 및 연마 패드의 제조 방법
JP5166172B2 (ja) 2008-09-02 2013-03-21 富士紡ホールディングス株式会社 研磨パッドの製造方法
JP5242322B2 (ja) 2008-09-30 2013-07-24 富士紡ホールディングス株式会社 研磨パッドおよびその製造方法
TWI516340B (zh) * 2009-01-12 2016-01-11 諾發沛拉納科技公司 用於化學機械平坦化之拋光墊及／或其他拋光方法
US8303375B2 (en) * 2009-01-12 2012-11-06 Novaplanar Technology, Inc. Polishing pads for chemical mechanical planarization and/or other polishing methods
JP5846714B2 (ja) 2009-04-06 2016-01-20 ニッタ・ハース株式会社 研磨パッド
US9056382B2 (en) * 2009-05-27 2015-06-16 Rogers Corporation Polishing pad, composition for the manufacture thereof, and method of making and using
US8697239B2 (en) * 2009-07-24 2014-04-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-functional polishing pad

Also Published As

Publication number Publication date
US20140242894A1 (en) 2014-08-28
JP2013089767A (ja) 2013-05-13
WO2013058183A1 (ja) 2013-04-25
US9149905B2 (en) 2015-10-06
EP2806453A1 (en) 2014-11-26
CN103930975B (zh) 2016-08-31
TW201321493A (zh) 2013-06-01
TWI553108B (zh) 2016-10-11
EP2806453A4 (en) 2015-07-22
EP2806453B1 (en) 2018-05-02
IL231935A0 (en) 2014-05-28
CN103930975A (zh) 2014-07-16
KR101984336B1 (ko) 2019-05-30
JP5945874B2 (ja) 2016-07-05
KR20140075795A (ko) 2014-06-19

Similar Documents

Publication Publication Date Title
IL231935A0 (en) Polishing pad and method for its production
EP2698809A4 (en) POLISHING CUSHIONS AND MANUFACTURING METHOD THEREFOR
EP2698811A4 (en) POLISHING CUSHIONS AND MANUFACTURING METHOD THEREFOR
SG11201401560VA (en) Double-side polishing method
SG11201406031YA (en) Polishing pad and method for producing polishing pad
EP2716662A4 (en) HYDROGEL AND METHOD FOR ITS MANUFACTURE
SG11201500924PA (en) Polishing composition and method for producing substrate
EP2687195A4 (en) BED AND SEPARATION METHOD THEREOF
SG11201400614RA (en) Polishing pad
PL2686514T3 (pl) Zintegrowana okładka przeciwzużyciowa oraz sposób
SG11201405708VA (en) Polishing method
EP2698810A4 (en) BUFFER PAD AND METHOD OF MANUFACTURING THE SAME
SG11201501825WA (en) Double-side polishing method
EP2853350A4 (en) POLISHING PAD AND METHOD FOR MANUFACTURING THE SAME
EP2767568A4 (en) SUSPENSION AND METHOD OF POLISHING
EP2537445A4 (en) PADDING PAD AND METHOD FOR THE PRODUCTION THEREOF
SG11201406374UA (en) Laminated polishing pad and method for producing same
EP2693459A4 (en) POLISHING COMPOSITION AND POLISHING METHOD
SG11201404143SA (en) Method for producing laminated polishing pad
EP2737112A4 (en) DIAMOND SEMICONDUCTOR SYSTEM AND METHOD THEREOF
SG11201400637XA (en) Polishing pad
EP2732917A4 (en) POLISHING CUSHION
SG11201402998PA (en) Hydroxy-aminopolymers and method for producing same
ZA201400854B (en) Grinding apparatus
SG11201501674XA (en) Double-side polishing method