KR890016574A - 전기적으로 프로그램 가능한 메모리 - Google Patents
전기적으로 프로그램 가능한 메모리 Download PDFInfo
- Publication number
- KR890016574A KR890016574A KR1019890005514A KR890005514A KR890016574A KR 890016574 A KR890016574 A KR 890016574A KR 1019890005514 A KR1019890005514 A KR 1019890005514A KR 890005514 A KR890005514 A KR 890005514A KR 890016574 A KR890016574 A KR 890016574A
- Authority
- KR
- South Korea
- Prior art keywords
- reference value
- value
- memory
- cell
- voltage
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 6 도는 본 발명에 따른 메모리의 한예의 다이어그램이다.
Claims (3)
- 기억된 정보의 리딩은 리딩 모드에서 셀의 프로그램된 상태의 함수인 전류나 전압 그리고 기준값을 비교함에 의해 행해지고, 상기 메모리는 시퀀스의 n-1주기준 값을 가진 전류나 전압을 비교하고 n가능 상태로 부터 셀의 프로그램된 상태를 유도하기 위해 리딩모드에서 작동하는 여러개의 비교회로를 구성하고 있으며, 상기에서 n은 3이상이고, 상기 메모리는 또 중간 기준값을 가진 셀의 전류나 전압을 비교하기 위한 여러개의 비교회로를 구성하고 있으며, 각 중간 기준값은 첫번째 주기준값과 시퀀스의 연속적인 값인 두번째 주 기준값 사이에 위치되어 있고, 메모리는 또 전류나 전압이 주기준값과 이 주기준값을 뒤따르는 중간 기준값 사이의 값일때 셀의 보상 프로그래밍을 위한 작동의 실행을 제어하고 그리고 측정된 전류나 전압이 중간값과 두번째 주기준값 사이의 정해진 스레시홀드에 도달할때 보상프로그래밍을 정지시키기 위한 비교회로의 출력을 받는 논리 제어 회로를 구성하고 있는 것으로 된 것을 특징으로 하는 전기적으로 프로그램 가능한 메모리.
- 제 1 항에 있어서, 정해진 스레시 홀드는 중간 기준값과 동등한 것을 특징으로 하는 메모리.
- 제 1 항에 있어서, 정해진 스레시 홀드는 첫번째 중간값과 두번째 주기준값 사이에 있는 두번째 중간값인 것을 특징으로 하는 메모리.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8805511 | 1988-04-26 | ||
FR8805511A FR2630573B1 (fr) | 1988-04-26 | 1988-04-26 | Memoire programmable electriquement avec plusieurs bits d'information par cellule |
Publications (1)
Publication Number | Publication Date |
---|---|
KR890016574A true KR890016574A (ko) | 1989-11-29 |
Family
ID=9365679
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890005514A KR890016574A (ko) | 1988-04-26 | 1989-04-25 | 전기적으로 프로그램 가능한 메모리 |
Country Status (6)
Country | Link |
---|---|
US (1) | US4964079A (ko) |
EP (1) | EP0340107B1 (ko) |
JP (1) | JP3101697B2 (ko) |
KR (1) | KR890016574A (ko) |
DE (1) | DE68910374T2 (ko) |
FR (1) | FR2630573B1 (ko) |
Families Citing this family (58)
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JPH07105146B2 (ja) * | 1988-07-29 | 1995-11-13 | 三菱電機株式会社 | 不揮発性記憶装置 |
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US5218569A (en) | 1991-02-08 | 1993-06-08 | Banks Gerald J | Electrically alterable non-volatile memory with n-bits per memory cell |
FR2683664A1 (fr) * | 1991-11-13 | 1993-05-14 | Sgs Thomson Microelectronics | Memoire integree electriquement programmable a un seuil transistor. |
KR960000619B1 (ko) * | 1991-12-27 | 1996-01-10 | 후지쓰 가부시끼가이샤 | 일괄소거형의 불휘발성 반도체 기억장치 및 그의 구동제어회로 |
US6222762B1 (en) | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
US5657332A (en) * | 1992-05-20 | 1997-08-12 | Sandisk Corporation | Soft errors handling in EEPROM devices |
US6000843A (en) * | 1992-07-03 | 1999-12-14 | Nippon Steel Corporation | Electrically alterable nonvolatile semiconductor memory |
US5450354A (en) * | 1992-08-31 | 1995-09-12 | Nippon Steel Corporation | Non-volatile semiconductor memory device detachable deterioration of memory cells |
US5386132A (en) * | 1992-11-02 | 1995-01-31 | Wong; Chun C. D. | Multimedia storage system with highly compact memory device |
US5418743A (en) * | 1992-12-07 | 1995-05-23 | Nippon Steel Corporation | Method of writing into non-volatile semiconductor memory |
EP0649147A1 (en) * | 1993-10-11 | 1995-04-19 | Texas Instruments France | Increased capacity storage device |
FR2714202B1 (fr) * | 1993-12-22 | 1996-01-12 | Sgs Thomson Microelectronics | Mémoire en circuit intégré à temps de lecture amélioré. |
JP3476952B2 (ja) * | 1994-03-15 | 2003-12-10 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US5515317A (en) * | 1994-06-02 | 1996-05-07 | Intel Corporation | Addressing modes for a dynamic single bit per cell to multiple bit per cell memory |
JP3610621B2 (ja) * | 1994-11-11 | 2005-01-19 | ソニー株式会社 | 不揮発性半導体メモリ装置 |
EP0724266B1 (en) * | 1995-01-27 | 2001-12-12 | STMicroelectronics S.r.l. | Successive approximation method for sensing multiple-level non-volatile memory cells and sensing circuit using such method |
KR100478172B1 (ko) | 1995-01-31 | 2005-03-23 | 가부시끼가이샤 히다치 세이사꾸쇼 | 반도체 메모리 장치 |
US6353554B1 (en) | 1995-02-27 | 2002-03-05 | Btg International Inc. | Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell |
DE69514783T2 (de) * | 1995-03-23 | 2000-06-08 | St Microelectronics Srl | Leseschaltung für serielle dichotomische Abfühlung von mehrschichtigen nichtflüchtigen Speicherzellen |
DE69516402T2 (de) * | 1995-07-31 | 2000-11-02 | St Microelectronics Srl | Gemischtes serielles paralleles dichotomisches Leseverfahren für nichtflüchtige Mehrpegel-Speicherzellen und Leseschaltung mit Verwendung eines solchen Verfahrens |
US5815434A (en) * | 1995-09-29 | 1998-09-29 | Intel Corporation | Multiple writes per a single erase for a nonvolatile memory |
JP3740212B2 (ja) * | 1996-05-01 | 2006-02-01 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
JP3062730B2 (ja) * | 1996-07-10 | 2000-07-12 | 株式会社日立製作所 | 不揮発性半導体記憶装置および書込み方法 |
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KR100371022B1 (ko) * | 1998-11-26 | 2003-07-16 | 주식회사 하이닉스반도체 | 다중비트 메모리셀의 데이터 센싱장치 |
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JPS58137181A (ja) * | 1982-02-05 | 1983-08-15 | Toshiba Corp | 半導体メモリ |
JPS59104796A (ja) * | 1982-12-03 | 1984-06-16 | Mitsubishi Electric Corp | 不揮発性半導体メモリ装置 |
EP0136119B1 (en) * | 1983-09-16 | 1988-06-29 | Fujitsu Limited | Plural-bit-per-cell read-only memory |
JPS626493A (ja) * | 1985-06-29 | 1987-01-13 | Ricoh Co Ltd | 書込みと消去が可能な半導体メモリ装置 |
JPH0828431B2 (ja) * | 1986-04-22 | 1996-03-21 | 日本電気株式会社 | 半導体記憶装置 |
JPS6342099A (ja) * | 1986-08-06 | 1988-02-23 | Fujitsu Ltd | 3値レベルrom |
JPS63153799A (ja) * | 1986-08-08 | 1988-06-27 | Nec Corp | 半導体メモリ |
-
1988
- 1988-04-26 FR FR8805511A patent/FR2630573B1/fr not_active Expired - Lifetime
-
1989
- 1989-04-24 US US07/342,476 patent/US4964079A/en not_active Expired - Lifetime
- 1989-04-25 KR KR1019890005514A patent/KR890016574A/ko not_active Application Discontinuation
- 1989-04-26 JP JP10714189A patent/JP3101697B2/ja not_active Expired - Lifetime
- 1989-04-26 EP EP89401183A patent/EP0340107B1/fr not_active Expired - Lifetime
- 1989-04-26 DE DE89401183T patent/DE68910374T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US4964079A (en) | 1990-10-16 |
EP0340107A1 (fr) | 1989-11-02 |
FR2630573A1 (fr) | 1989-10-27 |
FR2630573B1 (fr) | 1990-07-13 |
DE68910374D1 (de) | 1993-12-09 |
JP3101697B2 (ja) | 2000-10-23 |
EP0340107B1 (fr) | 1993-11-03 |
DE68910374T2 (de) | 1994-02-24 |
JPH0215497A (ja) | 1990-01-19 |
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WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |