DE69516402T2 - Gemischtes serielles paralleles dichotomisches Leseverfahren für nichtflüchtige Mehrpegel-Speicherzellen und Leseschaltung mit Verwendung eines solchen Verfahrens - Google Patents

Gemischtes serielles paralleles dichotomisches Leseverfahren für nichtflüchtige Mehrpegel-Speicherzellen und Leseschaltung mit Verwendung eines solchen Verfahrens

Info

Publication number
DE69516402T2
DE69516402T2 DE69516402T DE69516402T DE69516402T2 DE 69516402 T2 DE69516402 T2 DE 69516402T2 DE 69516402 T DE69516402 T DE 69516402T DE 69516402 T DE69516402 T DE 69516402T DE 69516402 T2 DE69516402 T2 DE 69516402T2
Authority
DE
Germany
Prior art keywords
reading
dichotomic
memory cells
serial parallel
multilevel memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69516402T
Other languages
English (en)
Other versions
DE69516402D1 (de
Inventor
Cristiano Calligaro
Vincenzo Daniele
Roberto Gastaldi
Alessandro Manstretta
Nicola Telecco
Guido Torelli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE69516402D1 publication Critical patent/DE69516402D1/de
Application granted granted Critical
Publication of DE69516402T2 publication Critical patent/DE69516402T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642Sensing or reading circuits; Data output circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2211/00Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563Multilevel memory reading aspects
    • G11C2211/5632Multilevel reading using successive approximation
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2211/00Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563Multilevel memory reading aspects
    • G11C2211/5633Mixed concurrent serial multilevel reading

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
DE69516402T 1995-07-31 1995-07-31 Gemischtes serielles paralleles dichotomisches Leseverfahren für nichtflüchtige Mehrpegel-Speicherzellen und Leseschaltung mit Verwendung eines solchen Verfahrens Expired - Lifetime DE69516402T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP95830347A EP0757355B1 (de) 1995-07-31 1995-07-31 Gemischtes serielles paralleles dichotomisches Leseverfahren für nichtflüchtige Mehrpegel-Speicherzellen und Leseschaltung mit Verwendung eines solchen Verfahrens

Publications (2)

Publication Number Publication Date
DE69516402D1 DE69516402D1 (de) 2000-05-25
DE69516402T2 true DE69516402T2 (de) 2000-11-02

Family

ID=8221994

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69516402T Expired - Lifetime DE69516402T2 (de) 1995-07-31 1995-07-31 Gemischtes serielles paralleles dichotomisches Leseverfahren für nichtflüchtige Mehrpegel-Speicherzellen und Leseschaltung mit Verwendung eines solchen Verfahrens

Country Status (3)

Country Link
US (1) US5729490A (de)
EP (1) EP0757355B1 (de)
DE (1) DE69516402T2 (de)

Families Citing this family (94)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5909397A (en) * 1996-10-08 1999-06-01 Texas Instruments Incorporated Method and system for testing and adjusting threshold voltages in flash eeproms
EP0945869B1 (de) * 1998-03-27 2004-11-17 STMicroelectronics S.r.l. Verfahren zum Lesen einer Mehrbitspeicherzelle
KR100339023B1 (ko) * 1998-03-28 2002-09-18 주식회사 하이닉스반도체 문턱전압을조절할수있는플래쉬메모리장치의센싱회로
US5930172A (en) * 1998-06-23 1999-07-27 Advanced Micro Devices, Inc. Page buffer for a multi-level flash memory with a limited number of latches per memory cell
US6005799A (en) * 1998-08-06 1999-12-21 Silicon Aquarius Methods and circuits for single-memory dynamic cell multivalue data storage
US6178114B1 (en) * 1999-01-12 2001-01-23 Macronix International Co., Ltd. Sensing apparatus and method for fetching multi-level cell data
EP1031991B1 (de) * 1999-02-26 2004-04-28 STMicroelectronics S.r.l. Leseverfahren eines mehrwertigen, nichtflüchtigen Speichers, und mehrwertiger,nichtflüchtiger Speicher
EP1211812B1 (de) * 2000-10-31 2006-11-15 STMicroelectronics S.r.l. Verfahren zur Analog/Digitalwandlung in nicht-flüchtigen Mehrregelspeichern mit hoher Dichte und dazugehöriger Wandler
JP2002230989A (ja) * 2001-01-31 2002-08-16 Mitsubishi Electric Corp 不揮発性半導体記憶装置
DE60136330D1 (de) * 2001-04-10 2008-12-11 St Microelectronics Srl Leseschaltkreis und zugehöriges Verfahren für nichtflüchtigen Mehrpegel-Speicher
EP1426965A1 (de) * 2002-12-04 2004-06-09 STMicroelectronics S.r.l. Leseschaltung für eine nichtflüchtige Speicherzelle insbesondere bei niedrigen Versorgungsspannungen und hoher Kapazitätsbelastung
ITMI20030075A1 (it) * 2003-01-20 2004-07-21 Simicroelectronics S R L Amplificatore di rilevamneto parallelo con specchiamento della corrente da misurare su ogni ramo di riferimento.
US6912150B2 (en) * 2003-05-13 2005-06-28 Lionel Portman Reference current generator, and method of programming, adjusting and/or operating same
JP2004348802A (ja) * 2003-05-20 2004-12-09 Sharp Corp 不揮発性メモリ素子のプログラム検証方法および半導体記憶装置とそれを備えた携帯電子機器
US20050035429A1 (en) * 2003-08-15 2005-02-17 Yeh Chih Chieh Programmable eraseless memory
US7132350B2 (en) * 2003-07-21 2006-11-07 Macronix International Co., Ltd. Method for manufacturing a programmable eraseless memory
US7180123B2 (en) * 2003-07-21 2007-02-20 Macronix International Co., Ltd. Method for programming programmable eraseless memory
ITMI20031619A1 (it) * 2003-08-06 2005-02-07 St Microelectronics Srl Amplificatore di rilevamento perfezionato.
US7081845B2 (en) * 2004-05-18 2006-07-25 Slicex, Inc. Current mode analog-to-digital converter
ITMI20042538A1 (it) * 2004-12-29 2005-03-29 Atmel Corp Metodo e sistema per la riduzione del soft-writing in una memoria flash a livelli multipli
US8650352B2 (en) * 2007-09-20 2014-02-11 Densbits Technologies Ltd. Systems and methods for determining logical values of coupled flash memory cells
US8365040B2 (en) 2007-09-20 2013-01-29 Densbits Technologies Ltd. Systems and methods for handling immediate data errors in flash memory
US8694715B2 (en) 2007-10-22 2014-04-08 Densbits Technologies Ltd. Methods for adaptively programming flash memory devices and flash memory systems incorporating same
US8443242B2 (en) 2007-10-25 2013-05-14 Densbits Technologies Ltd. Systems and methods for multiple coding rates in flash devices
US8607128B2 (en) * 2007-12-05 2013-12-10 Densbits Technologies Ltd. Low power chien-search based BCH/RS decoding system for flash memory, mobile communications devices and other applications
WO2009072101A2 (en) 2007-12-05 2009-06-11 Densbits Technologies Ltd. Apparatus and methods for generating row-specific reading thresholds in flash memory
US8335977B2 (en) 2007-12-05 2012-12-18 Densbits Technologies Ltd. Flash memory apparatus and methods using a plurality of decoding stages including optional use of concatenated BCH codes and/or designation of “first below” cells
US8276051B2 (en) * 2007-12-12 2012-09-25 Densbits Technologies Ltd. Chien-search system employing a clock-gating scheme to save power for error correction decoder and other applications
WO2009074978A2 (en) 2007-12-12 2009-06-18 Densbits Technologies Ltd. Systems and methods for error correction and decoding on multi-level physical media
WO2009078006A2 (en) 2007-12-18 2009-06-25 Densbits Technologies Ltd. Apparatus for coding at a plurality of rates in multi-level flash memory systems, and methods useful in conjunction therewith
US8972472B2 (en) * 2008-03-25 2015-03-03 Densbits Technologies Ltd. Apparatus and methods for hardware-efficient unbiased rounding
US8332725B2 (en) 2008-08-20 2012-12-11 Densbits Technologies Ltd. Reprogramming non volatile memory portions
US8819385B2 (en) 2009-04-06 2014-08-26 Densbits Technologies Ltd. Device and method for managing a flash memory
US8458574B2 (en) * 2009-04-06 2013-06-04 Densbits Technologies Ltd. Compact chien-search based decoding apparatus and method
US8566510B2 (en) 2009-05-12 2013-10-22 Densbits Technologies Ltd. Systems and method for flash memory management
TWI412036B (zh) * 2009-07-22 2013-10-11 Silicon Motion Inc 資料讀取的方法及資料儲存裝置
US8995197B1 (en) 2009-08-26 2015-03-31 Densbits Technologies Ltd. System and methods for dynamic erase and program control for flash memory device memories
US8305812B2 (en) * 2009-08-26 2012-11-06 Densbits Technologies Ltd. Flash memory module and method for programming a page of flash memory cells
US9330767B1 (en) 2009-08-26 2016-05-03 Avago Technologies General Ip (Singapore) Pte. Ltd. Flash memory module and method for programming a page of flash memory cells
US8868821B2 (en) 2009-08-26 2014-10-21 Densbits Technologies Ltd. Systems and methods for pre-equalization and code design for a flash memory
US8730729B2 (en) 2009-10-15 2014-05-20 Densbits Technologies Ltd. Systems and methods for averaging error rates in non-volatile devices and storage systems
US8724387B2 (en) 2009-10-22 2014-05-13 Densbits Technologies Ltd. Method, system, and computer readable medium for reading and programming flash memory cells using multiple bias voltages
US8626988B2 (en) * 2009-11-19 2014-01-07 Densbits Technologies Ltd. System and method for uncoded bit error rate equalization via interleaving
US9037777B2 (en) * 2009-12-22 2015-05-19 Densbits Technologies Ltd. Device, system, and method for reducing program/read disturb in flash arrays
US8607124B2 (en) * 2009-12-24 2013-12-10 Densbits Technologies Ltd. System and method for setting a flash memory cell read threshold
US8341502B2 (en) * 2010-02-28 2012-12-25 Densbits Technologies Ltd. System and method for multi-dimensional decoding
US8527840B2 (en) 2010-04-06 2013-09-03 Densbits Technologies Ltd. System and method for restoring damaged data programmed on a flash device
US8516274B2 (en) 2010-04-06 2013-08-20 Densbits Technologies Ltd. Method, system and medium for analog encryption in a flash memory
US8745317B2 (en) 2010-04-07 2014-06-03 Densbits Technologies Ltd. System and method for storing information in a multi-level cell memory
US9021177B2 (en) 2010-04-29 2015-04-28 Densbits Technologies Ltd. System and method for allocating and using spare blocks in a flash memory
US8539311B2 (en) 2010-07-01 2013-09-17 Densbits Technologies Ltd. System and method for data recovery in multi-level cell memories
US8468431B2 (en) 2010-07-01 2013-06-18 Densbits Technologies Ltd. System and method for multi-dimensional encoding and decoding
US20120008414A1 (en) 2010-07-06 2012-01-12 Michael Katz Systems and methods for storing, retrieving, and adjusting read thresholds in flash memory storage system
US8964464B2 (en) 2010-08-24 2015-02-24 Densbits Technologies Ltd. System and method for accelerated sampling
US8508995B2 (en) 2010-09-15 2013-08-13 Densbits Technologies Ltd. System and method for adjusting read voltage thresholds in memories
US9063878B2 (en) 2010-11-03 2015-06-23 Densbits Technologies Ltd. Method, system and computer readable medium for copy back
US8850100B2 (en) 2010-12-07 2014-09-30 Densbits Technologies Ltd. Interleaving codeword portions between multiple planes and/or dies of a flash memory device
US10079068B2 (en) 2011-02-23 2018-09-18 Avago Technologies General Ip (Singapore) Pte. Ltd. Devices and method for wear estimation based memory management
US8693258B2 (en) 2011-03-17 2014-04-08 Densbits Technologies Ltd. Obtaining soft information using a hard interface
US8990665B1 (en) 2011-04-06 2015-03-24 Densbits Technologies Ltd. System, method and computer program product for joint search of a read threshold and soft decoding
US8996790B1 (en) 2011-05-12 2015-03-31 Densbits Technologies Ltd. System and method for flash memory management
US9110785B1 (en) 2011-05-12 2015-08-18 Densbits Technologies Ltd. Ordered merge of data sectors that belong to memory space portions
US9372792B1 (en) 2011-05-12 2016-06-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Advanced management of a non-volatile memory
US9501392B1 (en) 2011-05-12 2016-11-22 Avago Technologies General Ip (Singapore) Pte. Ltd. Management of a non-volatile memory module
US9195592B1 (en) 2011-05-12 2015-11-24 Densbits Technologies Ltd. Advanced management of a non-volatile memory
US9396106B2 (en) 2011-05-12 2016-07-19 Avago Technologies General Ip (Singapore) Pte. Ltd. Advanced management of a non-volatile memory
US8667211B2 (en) 2011-06-01 2014-03-04 Densbits Technologies Ltd. System and method for managing a non-volatile memory
US8588003B1 (en) 2011-08-01 2013-11-19 Densbits Technologies Ltd. System, method and computer program product for programming and for recovering from a power failure
US8553468B2 (en) 2011-09-21 2013-10-08 Densbits Technologies Ltd. System and method for managing erase operations in a non-volatile memory
US8996788B2 (en) 2012-02-09 2015-03-31 Densbits Technologies Ltd. Configurable flash interface
US8947941B2 (en) 2012-02-09 2015-02-03 Densbits Technologies Ltd. State responsive operations relating to flash memory cells
US8996793B1 (en) 2012-04-24 2015-03-31 Densbits Technologies Ltd. System, method and computer readable medium for generating soft information
US8838937B1 (en) 2012-05-23 2014-09-16 Densbits Technologies Ltd. Methods, systems and computer readable medium for writing and reading data
US8879325B1 (en) 2012-05-30 2014-11-04 Densbits Technologies Ltd. System, method and computer program product for processing read threshold information and for reading a flash memory module
US9921954B1 (en) 2012-08-27 2018-03-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Method and system for split flash memory management between host and storage controller
US9368225B1 (en) 2012-11-21 2016-06-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Determining read thresholds based upon read error direction statistics
US9069659B1 (en) 2013-01-03 2015-06-30 Densbits Technologies Ltd. Read threshold determination using reference read threshold
US9136876B1 (en) 2013-06-13 2015-09-15 Densbits Technologies Ltd. Size limited multi-dimensional decoding
US9413491B1 (en) 2013-10-08 2016-08-09 Avago Technologies General Ip (Singapore) Pte. Ltd. System and method for multiple dimension decoding and encoding a message
US9348694B1 (en) 2013-10-09 2016-05-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Detecting and managing bad columns
US9397706B1 (en) 2013-10-09 2016-07-19 Avago Technologies General Ip (Singapore) Pte. Ltd. System and method for irregular multiple dimension decoding and encoding
US9786388B1 (en) 2013-10-09 2017-10-10 Avago Technologies General Ip (Singapore) Pte. Ltd. Detecting and managing bad columns
US9536612B1 (en) 2014-01-23 2017-01-03 Avago Technologies General Ip (Singapore) Pte. Ltd Digital signaling processing for three dimensional flash memory arrays
US10120792B1 (en) 2014-01-29 2018-11-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Programming an embedded flash storage device
US9542262B1 (en) 2014-05-29 2017-01-10 Avago Technologies General Ip (Singapore) Pte. Ltd. Error correction
US9892033B1 (en) 2014-06-24 2018-02-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Management of memory units
US9972393B1 (en) 2014-07-03 2018-05-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Accelerating programming of a flash memory module
US9584159B1 (en) 2014-07-03 2017-02-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Interleaved encoding
US9449702B1 (en) 2014-07-08 2016-09-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Power management
US9524211B1 (en) 2014-11-18 2016-12-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Codeword management
US10305515B1 (en) 2015-02-02 2019-05-28 Avago Technologies International Sales Pte. Limited System and method for encoding using multiple linear feedback shift registers
US10628255B1 (en) 2015-06-11 2020-04-21 Avago Technologies International Sales Pte. Limited Multi-dimensional decoding
US9851921B1 (en) 2015-07-05 2017-12-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Flash memory chip processing
US9954558B1 (en) 2016-03-03 2018-04-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Fast decoding of data stored in a flash memory

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404655A (en) * 1981-01-28 1983-09-13 General Instrument Corporation Data sense apparatus for use in multi-threshold read only memory
US4544917A (en) * 1982-09-16 1985-10-01 Westinghouse Electric Corp. A/D converter having digitally controlled subranging and self-alignment apparatus for use therein
US4749984A (en) * 1987-06-29 1988-06-07 Rca Corporation Subranging A/D converter with converging digitally controlled voltages
FR2630573B1 (fr) * 1988-04-26 1990-07-13 Sgs Thomson Microelectronics Memoire programmable electriquement avec plusieurs bits d'information par cellule
JPH0262123A (ja) * 1988-08-29 1990-03-02 Matsushita Electric Ind Co Ltd 直並列型a/d変換器
US5142495A (en) * 1989-03-10 1992-08-25 Intel Corporation Variable load for margin mode
US5163021A (en) * 1989-04-13 1992-11-10 Sundisk Corporation Multi-state EEprom read and write circuits and techniques
US5070332A (en) * 1991-03-18 1991-12-03 Burr-Brown Corporation Two-step subranging analog to digital converter
JP2564067B2 (ja) * 1992-01-09 1996-12-18 株式会社東芝 センス回路を有する読み出し出力回路
US5638322A (en) * 1995-07-19 1997-06-10 Cypress Semiconductor Corp. Apparatus and method for improving common mode noise rejection in pseudo-differential sense amplifiers

Also Published As

Publication number Publication date
US5729490A (en) 1998-03-17
EP0757355B1 (de) 2000-04-19
DE69516402D1 (de) 2000-05-25
EP0757355A1 (de) 1997-02-05

Similar Documents

Publication Publication Date Title
DE69516402D1 (de) Gemischtes serielles paralleles dichotomisches Leseverfahren für nichtflüchtige Mehrpegel-Speicherzellen und Leseschaltung mit Verwendung eines solchen Verfahrens
DE68919393D1 (de) Nichtflüchtige Speicherzelle und Verfahren zum Lesen.
TW358208B (en) Non-volatile semiconductor memory for unit and multi-unit operations
DE69128209T2 (de) Löschschaltung und -verfahren für EEPROM-Speichermatrizen
DE69424927D1 (de) Datenleseverfahren in Halbleiterspeicheranordnung geeignet zum Speichern von drei- oder mehrwertigen Daten in einer Speicherzelle
DE69613266D1 (de) Leseverfahren eines ferroelektrischen Speichers unter Verwendung von unterschiedlichen Lese- und Schreibespannungen
DE69423104D1 (de) Fehlernachweis- und Korrekturverfahren in einem mehrstufigen Speicher und Speicher für dieses Verfahren
DE69630024D1 (de) Nichtflüchtiger Speicher mit Einzelzellenreferenzsignalgeneratorschaltung zum Auslesen von Speicherzellen
DE4495101T1 (de) Speicherelemente, nichtflüchtige Speicher, nichtflüchtige Speichervorrichtungen und darauf basierende Verfahren zur Informationsspeicherung
DE69427209D1 (de) Anordnung und Verfahren zum Lesen von Mehrpegeldatensignalen in einem Halbleiterspeicher
DE69630758D1 (de) Ferroelektrischer Speicher und Datenleseverfahren von diesem Speicher
DE69522738T2 (de) Verfahren und Schaltkreis zum Programmieren einer Schwebegatterspeicherzelle
DE69811181T2 (de) Leseverfahren für ferroelektrischen 1T/1C-Speicher
DE69823618D1 (de) Ferroelektrischer Direktzugriffspeicher mit kurzlebigem Zelldetektor für Prüfung eines ferroelektrischen Kapazitors und Verfahren zur Prüfung von ferroelekrischen Speicherzellen
DE69633000D1 (de) Zellendekodiererschaltkreis für einen nichtflüchtigen elektrisch programmierbaren Speicher und entsprechendes Verfahren
DE69629669D1 (de) Leseverfahren und -schaltung für nichtflüchtige Speicherzellen mit Entzerrerschaltung
DE69716844D1 (de) Datenschreibverfahren in einer ferroelektrischen Speicherzelle vom Ein-Transistor-Typ
DE59608152D1 (de) Elektrisch schreib- und löschbare festwertspeicherzellenanordnung und verfahren zu deren herstellung
DE69631123D1 (de) Verfahren und Schaltung zum Lesen von nichtflüchtigen Speicherzellen mit niedriger Versorgungsspannung
DE69712005T2 (de) Datenleseschaltungsanordnung und Verfahren für eine Mehrbitszelle
DE69726832D1 (de) Datenlesevorrichtung und -verfahren für Mehrbitspeicherzelle
DE69820594D1 (de) Anordnung und Verfahren zum Lesen von nichtflüchtigen Speicherzellen
DE69524558T2 (de) Schnittweises Annäherungsverfahren zum Abtasten von nichtflüchtigen Mehrfachniveauspeicherzellen und dementsprechende Abtastschaltung
DE69227542T2 (de) Speicher mit kapazitiver EEPROM-Speicherzelle und Verfahren zum Lesen dieser Speicherzelle
GB2320810B (en) Flash memory cell array and method of programming, erasing and reading the same

Legal Events

Date Code Title Description
8364 No opposition during term of opposition