KR20050003974A - 반도체 웨이퍼 및 반도체소자의 제조방법 - Google Patents
반도체 웨이퍼 및 반도체소자의 제조방법 Download PDFInfo
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- KR20050003974A KR20050003974A KR1020040000616A KR20040000616A KR20050003974A KR 20050003974 A KR20050003974 A KR 20050003974A KR 1020040000616 A KR1020040000616 A KR 1020040000616A KR 20040000616 A KR20040000616 A KR 20040000616A KR 20050003974 A KR20050003974 A KR 20050003974A
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- Prior art keywords
- semiconductor wafer
- semiconductor
- support plate
- wafer
- back surface
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 246
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 238000000926 separation method Methods 0.000 claims abstract description 27
- 230000002093 peripheral effect Effects 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 22
- 239000000853 adhesive Substances 0.000 claims description 16
- 230000001070 adhesive effect Effects 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 230000002040 relaxant effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 159
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000012217 deletion Methods 0.000 description 2
- 230000037430 deletion Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/20—Optical components
- H02S40/22—Light-reflecting or light-concentrating means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (3)
- 반도체회로가 형성된 평탄면인 표면에 지지판이 접착됨과 동시에, 이면이 삭제가공되어 박판화되는 반도체 웨이퍼에 있어서,주연부에는, 상기 이면의 삭제가공에 의한 마무리 두께보다도 크고, 상기 평탄면으로부터 지름의 외측방향으로 연장된 치수가, 상기 반도체 웨이퍼 및 이 반도체 웨이퍼와 거의 동일한 지름을 갖는 지지판의 지름치수의 마무리 공차의 최대 최소차와, 상기 반도체 웨이퍼 및 상기 지지판의 접착시에 생기는 위치 정렬 오차의 최대치와의 합계값보다도 크고, 이면의 삭제에 의해 분리되는 분리부가 형성된 것을 특징으로 하는 반도체 웨이퍼.
- 웨이퍼 본체 표면의 평탄면에 반도체회로를 형성하는 공정과,청구항 1에 기재된 분리부를 웨이퍼 본체 표면측의 주연부에 형성하여 반도체 웨이퍼를 형성하는 공정과,상기 반도체 웨이퍼 표면에 접착재를 사용하여 반도체 웨이퍼와 거의 동일한 지름치수의 지지판을 접착하는 공정과,상기 반도체 웨이퍼의 이면을 삭제하고 상기 분리부를 제거하여 베이스를 형성하는 공정과,이 베이스의 이면을 가공처리하는 공정을 포함한 것을 특징으로 하는 반도체소자의제조방법.
- 웨이퍼 본체 표면의 평탄면에 반도체회로를 형성하는 공정과,상기 반도체회로로부터 상기 웨이퍼 본체로 연장된 복수개의 구멍을 형성하는 공정과,상기 웨이퍼 본체의 주연부에 청구항 1에 기재된 분리부를 형성하여 반도체 웨이퍼를 형성하는 공정과,상기 구멍에 도전재인 금속을 매립하여, 전극부를 형성하는 공정과,상기 반도체 웨이퍼의 표면에 접착재를 사용하여 반도체 웨이퍼와 거의 동일한 지름치수의 지지판을 접착하는 공정과,상기 반도체 웨이퍼의 이면을 삭제하고 상기 분리부를 제거하여 베이스를 형성함과 동시에 상기 전극부의 단면을 노출시키는 공정과,상기 베이스의 이면을 삭제하여, 상기 전극부를 돌출시키는 공정과,상기 베이스의 이면에서 절연막을 형성하는 공정과,상기 전극부의 단면을 가공하여 관통전극을 형성하는 공정을 포함한 것을 특징으로 하는 반도체소자의 제조방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2003-00189574 | 2003-07-01 | ||
JP2003189574A JP2005026413A (ja) | 2003-07-01 | 2003-07-01 | 半導体ウエハ、半導体素子およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050003974A true KR20050003974A (ko) | 2005-01-12 |
KR100661471B1 KR100661471B1 (ko) | 2006-12-27 |
Family
ID=33549791
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040000616A KR100661471B1 (ko) | 2003-07-01 | 2004-01-06 | 반도체 웨이퍼 및 반도체소자의 제조방법 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7195988B2 (ko) |
JP (1) | JP2005026413A (ko) |
KR (1) | KR100661471B1 (ko) |
CN (1) | CN1311523C (ko) |
DE (1) | DE102004006494A1 (ko) |
TW (1) | TWI265551B (ko) |
Cited By (3)
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KR20150144178A (ko) * | 2014-06-16 | 2015-12-24 | 삼성전자주식회사 | 반도체 패키지의 제조 방법 |
CN110534422A (zh) * | 2018-05-25 | 2019-12-03 | 力成科技股份有限公司 | 全边切削的晶圆加工方法 |
CN111063649A (zh) * | 2019-12-03 | 2020-04-24 | 深圳市华星光电半导体显示技术有限公司 | Micro LED的转移方法及转移装置 |
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- 2004-02-10 DE DE102004006494A patent/DE102004006494A1/de not_active Ceased
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CN111063649A (zh) * | 2019-12-03 | 2020-04-24 | 深圳市华星光电半导体显示技术有限公司 | Micro LED的转移方法及转移装置 |
CN111063649B (zh) * | 2019-12-03 | 2022-11-01 | 深圳市华星光电半导体显示技术有限公司 | Micro LED的转移方法及转移装置 |
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TWI265551B (en) | 2006-11-01 |
TW200503050A (en) | 2005-01-16 |
KR100661471B1 (ko) | 2006-12-27 |
DE102004006494A1 (de) | 2005-01-27 |
JP2005026413A (ja) | 2005-01-27 |
US7709932B2 (en) | 2010-05-04 |
US7195988B2 (en) | 2007-03-27 |
CN1311523C (zh) | 2007-04-18 |
US20050023647A1 (en) | 2005-02-03 |
CN1577733A (zh) | 2005-02-09 |
US20060038260A1 (en) | 2006-02-23 |
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