JP5063936B2 - Ｔｆｔアレイ基板の製造方法 - Google Patents

Ｔｆｔアレイ基板の製造方法 Download PDF

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Publication number
JP5063936B2
JP5063936B2 JP2006159306A JP2006159306A JP5063936B2 JP 5063936 B2 JP5063936 B2 JP 5063936B2 JP 2006159306 A JP2006159306 A JP 2006159306A JP 2006159306 A JP2006159306 A JP 2006159306A JP 5063936 B2 JP5063936 B2 JP 5063936B2
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Japan
Prior art keywords
film
transparent conductive
conductive film
etching
tft array
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JP2006159306A
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English (en)
Japanese (ja)
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JP2007329298A (ja
Inventor
英次 柴田
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2006159306A priority Critical patent/JP5063936B2/ja
Priority to TW096115568A priority patent/TW200802892A/zh
Priority to KR1020070055454A priority patent/KR100857481B1/ko
Priority to CNB2007101102680A priority patent/CN100539193C/zh
Publication of JP2007329298A publication Critical patent/JP2007329298A/ja
Application granted granted Critical
Publication of JP5063936B2 publication Critical patent/JP5063936B2/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2006159306A 2006-06-08 2006-06-08 Ｔｆｔアレイ基板の製造方法 Active JP5063936B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006159306A JP5063936B2 (ja) 2006-06-08 2006-06-08 Ｔｆｔアレイ基板の製造方法
TW096115568A TW200802892A (en) 2006-06-08 2007-05-02 TFT array substrate, its manufacturing method, and display device
KR1020070055454A KR100857481B1 (ko) 2006-06-08 2007-06-07 Ｔｆｔ 어레이 기판, 그 제조 방법 및 표시장치
CNB2007101102680A CN100539193C (zh) 2006-06-08 2007-06-08 Tft阵列衬底、其制造方法以及显示装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006159306A JP5063936B2 (ja) 2006-06-08 2006-06-08 Ｔｆｔアレイ基板の製造方法

Publications (2)

Publication Number Publication Date
JP2007329298A JP2007329298A (ja) 2007-12-20
JP5063936B2 true JP5063936B2 (ja) 2012-10-31

Family

ID=38929565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006159306A Active JP5063936B2 (ja) 2006-06-08 2006-06-08 Ｔｆｔアレイ基板の製造方法

Country Status (4)

Country Link
JP (1) JP5063936B2 (zh)
KR (1) KR100857481B1 (zh)
CN (1) CN100539193C (zh)
TW (1) TW200802892A (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101685229B (zh) * 2008-09-25 2012-02-29 北京京东方光电科技有限公司 液晶显示器阵列基板的制造方法
TWI474408B (zh) 2008-12-26 2015-02-21 Semiconductor Energy Lab 半導體裝置及其製造方法
KR101600879B1 (ko) * 2010-03-16 2016-03-09 삼성디스플레이 주식회사 박막트랜지스터, 그 제조방법 및 박막트랜지스터를 이용한 표시기판
US8664097B2 (en) 2010-09-13 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5950638B2 (ja) 2012-03-12 2016-07-13 三菱電機株式会社 配線構造及びそれを備える薄膜トランジスタアレイ基板並びに表示装置
CN103341692A (zh) * 2013-06-26 2013-10-09 京东方科技集团股份有限公司 切割不规则图形基板的方法和显示装置
CN104716166A (zh) * 2015-03-18 2015-06-17 上海天马微电子有限公司 一种有机发光显示装置及其制作方法
CN105895639A (zh) 2016-06-29 2016-08-24 京东方科技集团股份有限公司 阵列基板及其制备方法、显示器件
CN107836039A (zh) * 2016-11-23 2018-03-23 深圳市柔宇科技有限公司 阵列基板的制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100233151B1 (ko) * 1997-04-03 1999-12-01 윤종용 박막 트랜지스터 기판의 제조 방법
JP2968252B2 (ja) * 1998-04-06 1999-10-25 株式会社日立製作所 液晶表示装置
JP2000101091A (ja) * 1998-09-28 2000-04-07 Sharp Corp 薄膜トランジスタ
JP2005301255A (ja) * 2000-01-26 2005-10-27 Sharp Corp 液晶表示装置、配線基板およびこれらの製造方法
KR100656910B1 (ko) * 2000-10-10 2006-12-12 삼성전자주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR100663294B1 (ko) * 2000-12-30 2007-01-02 비오이 하이디스 테크놀로지 주식회사 박막 트랜지스터 액정표시장치 제조방법
JP4267242B2 (ja) * 2001-03-06 2009-05-27 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP2004241774A (ja) * 2003-02-03 2004-08-26 Samsung Electronics Co Ltd 薄膜トランジスタ表示板及びその製造方法とそのためのマスク
JP2005302808A (ja) * 2004-04-07 2005-10-27 Sharp Corp 薄膜トランジスタアレイ基板の製造方法

Also Published As

Publication number Publication date
CN101087004A (zh) 2007-12-12
KR100857481B1 (ko) 2008-09-08
JP2007329298A (ja) 2007-12-20
KR20070117485A (ko) 2007-12-12
CN100539193C (zh) 2009-09-09
TW200802892A (en) 2008-01-01

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