KR100857481B1 - Ｔｆｔ 어레이 기판, 그 제조 방법 및 표시장치 - Google Patents

Ｔｆｔ 어레이 기판, 그 제조 방법 및 표시장치 Download PDF

Info

Publication number
KR100857481B1
KR100857481B1 KR1020070055454A KR20070055454A KR100857481B1 KR 100857481 B1 KR100857481 B1 KR 100857481B1 KR 1020070055454 A KR1020070055454 A KR 1020070055454A KR 20070055454 A KR20070055454 A KR 20070055454A KR 100857481 B1 KR100857481 B1 KR 100857481B1
Authority
KR
South Korea
Prior art keywords
film
transparent conductive
conductive film
electrode
etching
Prior art date
Application number
KR1020070055454A
Other languages
English (en)
Korean (ko)
Other versions
KR20070117485A (ko
Inventor
에이지 시바타
Original Assignee
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시덴키 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20070117485A publication Critical patent/KR20070117485A/ko
Application granted granted Critical
Publication of KR100857481B1 publication Critical patent/KR100857481B1/ko

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020070055454A 2006-06-08 2007-06-07 Ｔｆｔ 어레이 기판, 그 제조 방법 및 표시장치 KR100857481B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00159306 2006-06-08
JP2006159306A JP5063936B2 (ja) 2006-06-08 2006-06-08 Ｔｆｔアレイ基板の製造方法

Publications (2)

Publication Number Publication Date
KR20070117485A KR20070117485A (ko) 2007-12-12
KR100857481B1 true KR100857481B1 (ko) 2008-09-08

Family

ID=38929565

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070055454A KR100857481B1 (ko) 2006-06-08 2007-06-07 Ｔｆｔ 어레이 기판, 그 제조 방법 및 표시장치

Country Status (4)

Country Link
JP (1) JP5063936B2 (zh)
KR (1) KR100857481B1 (zh)
CN (1) CN100539193C (zh)
TW (1) TW200802892A (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101685229B (zh) * 2008-09-25 2012-02-29 北京京东方光电科技有限公司 液晶显示器阵列基板的制造方法
TWI474408B (zh) 2008-12-26 2015-02-21 Semiconductor Energy Lab 半導體裝置及其製造方法
KR101600879B1 (ko) * 2010-03-16 2016-03-09 삼성디스플레이 주식회사 박막트랜지스터, 그 제조방법 및 박막트랜지스터를 이용한 표시기판
US8664097B2 (en) 2010-09-13 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5950638B2 (ja) 2012-03-12 2016-07-13 三菱電機株式会社 配線構造及びそれを備える薄膜トランジスタアレイ基板並びに表示装置
CN103341692A (zh) * 2013-06-26 2013-10-09 京东方科技集团股份有限公司 切割不规则图形基板的方法和显示装置
CN104716166A (zh) * 2015-03-18 2015-06-17 上海天马微电子有限公司 一种有机发光显示装置及其制作方法
CN105895639A (zh) 2016-06-29 2016-08-24 京东方科技集团股份有限公司 阵列基板及其制备方法、显示器件
CN107836039A (zh) * 2016-11-23 2018-03-23 深圳市柔宇科技有限公司 阵列基板的制造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980075975A (ko) * 1997-04-03 1998-11-16 윤종용 박막 트랜지스터 기판의 제조 방법
JP2000101091A (ja) * 1998-09-28 2000-04-07 Sharp Corp 薄膜トランジスタ
KR20020028517A (ko) * 2000-10-10 2002-04-17 윤종용 박막 트랜지스터 기판 및 그 제조 방법
KR20020057019A (ko) * 2000-12-30 2002-07-11 주식회사 현대 디스플레이 테크놀로지 박막 트랜지스터 액정표시장치 제조방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2968252B2 (ja) * 1998-04-06 1999-10-25 株式会社日立製作所 液晶表示装置
JP2005301255A (ja) * 2000-01-26 2005-10-27 Sharp Corp 液晶表示装置、配線基板およびこれらの製造方法
JP4267242B2 (ja) * 2001-03-06 2009-05-27 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP2004241774A (ja) * 2003-02-03 2004-08-26 Samsung Electronics Co Ltd 薄膜トランジスタ表示板及びその製造方法とそのためのマスク
JP2005302808A (ja) * 2004-04-07 2005-10-27 Sharp Corp 薄膜トランジスタアレイ基板の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980075975A (ko) * 1997-04-03 1998-11-16 윤종용 박막 트랜지스터 기판의 제조 방법
JP2000101091A (ja) * 1998-09-28 2000-04-07 Sharp Corp 薄膜トランジスタ
KR20020028517A (ko) * 2000-10-10 2002-04-17 윤종용 박막 트랜지스터 기판 및 그 제조 방법
KR20020057019A (ko) * 2000-12-30 2002-07-11 주식회사 현대 디스플레이 테크놀로지 박막 트랜지스터 액정표시장치 제조방법

Also Published As

Publication number Publication date
JP5063936B2 (ja) 2012-10-31
CN101087004A (zh) 2007-12-12
JP2007329298A (ja) 2007-12-20
KR20070117485A (ko) 2007-12-12
CN100539193C (zh) 2009-09-09
TW200802892A (en) 2008-01-01

Similar Documents

Publication Publication Date Title
KR100857481B1 (ko) Ｔｆｔ 어레이 기판, 그 제조 방법 및 표시장치
US7888678B2 (en) Thin film array panel and manufacturing method thereof
KR101226974B1 (ko) 액정표시장치용 어레이 기판 및 그 제조 방법
US20090224257A1 (en) Thin film transistor panel and manufacturing method of the same
US6608658B1 (en) Top gate TFT structure having light shielding layer and method to fabricate the same
US20080265254A1 (en) Thin film transistor array substrate, method of manufacturing same, and display device
JP5907697B2 (ja) 配線構造及びそれを備える薄膜トランジスタアレイ基板並びに表示装置
JP2005122182A (ja) 表示素子用の薄膜トランジスタ基板及び製造方法
KR20070002447A (ko) 액정표시패널 및 그 제조방법
US8390776B2 (en) Thin film transistor array and method of manufacturing the same
US7078279B2 (en) Manufacturing method of a thin film transistor array substrate
KR102248837B1 (ko) 박막 트랜지스터 표시판의 제조 방법
US8772781B2 (en) Wiring structure, thin film transistor array substrate including the same, and display device
JP2012018970A (ja) 薄膜トランジスタアレイ基板、その製造方法、及び液晶表示装置
US7492418B2 (en) Liquid crystal display device with particular metal layer configuration of TFT and fabricating method thereof
KR100688372B1 (ko) 기판, 그 기판을 구비한 액정 표시 장치 및 기판을제조하는 방법
JP6188473B2 (ja) 薄膜トランジスタアレイ基板およびその製造方法
KR101835525B1 (ko) 표시 장치 및 그 제조 방법
WO2012176702A1 (ja) Ｔｆｔ基板およびその製造方法ならびに表示装置
KR100416853B1 (ko) 액정표시장치용 어레이기판과 박막트랜지스터 제조방법
JP2009239174A (ja) パターン形成方法、コンタクトホールの形成方法、及び電気光学装置の製造方法
JP2008263128A (ja) 薄膜トランジスタアレイ基板、その製造方法、及び表示装置
JP5236370B2 (ja) Ｔｆｔ基板の製造方法及びｔｆｔ基板
JP4863667B2 (ja) 液晶表示装置とその製造方法
KR20090114003A (ko) 미세 패턴의 형성방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20120821

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20130822

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20140825

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20150730

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20160818

Year of fee payment: 9

LAPS Lapse due to unpaid annual fee