JP5863399B2 - 配線構造及びそれを備える薄膜トランジスタアレイ基板並びに表示装置 - Google Patents
配線構造及びそれを備える薄膜トランジスタアレイ基板並びに表示装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 114
- 239000010409 thin film Substances 0.000 title claims description 8
- 239000010408 film Substances 0.000 claims description 580
- 239000004065 semiconductor Substances 0.000 claims description 71
- 239000010410 layer Substances 0.000 description 77
- 238000006243 chemical reaction Methods 0.000 description 44
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- 238000000034 method Methods 0.000 description 41
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- 238000010586 diagram Methods 0.000 description 13
- 238000000059 patterning Methods 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
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- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
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- 239000000956 alloy Substances 0.000 description 4
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
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- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
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- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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- 239000011229 interlayer Substances 0.000 description 1
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- 235000006408 oxalic acid Nutrition 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
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- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
始めに、本発明に係る配線構造を適用可能な液晶表示装置の構成例を示す。図1は、本発明の実施の形態に係る液晶表示装置を構成するTFTアレイ基板100を示す平面図である。図1に示すように、当該TFTアレイ基板100は、基板1上にアレイ状(マトリクス状)に配設された、画像の表示単位となる画素50を備える。各画素50には、画素電極(不図示)に表示電圧を供給するスイッチング素子であるTFT51が配置される。TFT51を搭載した基板1から構成される部材を「TFTアレイ基板」と呼ぶのは、TFT51が画素50ごとにアレイ状に配列されるためである。基板1は、例えば、ガラス基板や半導体基板により構成される。
図15〜図17は、実施の形態2に係るTFTアレイ基板100の配線変換部45の構成を示す図である。図15は配線変換部45の平面図であり、図16はそのF1−F2線に沿った断面図、図17はそのG1−G2線に沿った断面図である。
Claims (7)
- 上層導電膜と、
前記上層導電膜上に形成された第1の透明導電膜とを備え、
前記第1の透明導電膜は、当該第1の透明導電膜のコーナー部近傍では前記上層導電膜の端面を覆っておらず、前記コーナー部近傍以外において前記上層導電膜の端面を覆う部分を有している
ことを特徴とする配線構造。 - 前記上層導電膜は、異なる種類の導電性の膜を積層した積層膜である
請求項1記載の配線構造。 - 前記上層導電膜の下に、当該上層導電膜と電気的に接続した半導体層をさらに備える
請求項1または請求項2記載の配線構造。 - 前記上層導電膜の下には半導体層が形成されていない
請求項1または請求項2記載の配線構造。 - 前記第1の透明導電膜上に形成された絶縁膜と、
前記絶縁膜よりも下に形成され、前記上層導電膜とは異なる層の下層導電膜と、
前記絶縁膜に形成され、前記第1の透明導電膜に達する第1のコンタクトホールと、
前記絶縁膜に形成され、前記下層導電膜に達する第2のコンタクトホールと、
前記絶縁膜上に形成され、前記第1のコンタクトホールを介して前記第1の透明導電膜に接続すると共に、前記第2のコンタクトホールを介して前記下層導電膜に接続する第2の透明導電膜とをさらに備える
請求項1から請求項4のいずれか一項記載の配線構造。 - 請求項1から請求項5のいずれか一項記載の配線構造を備える薄膜トランジスタアレイ基板。
- 請求項6記載の薄膜トランジスタアレイ基板を用いて形成した表示パネルを備える表示装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2011243076A JP5863399B2 (ja) | 2011-11-07 | 2011-11-07 | 配線構造及びそれを備える薄膜トランジスタアレイ基板並びに表示装置 |
US13/665,412 US8772781B2 (en) | 2011-11-07 | 2012-10-31 | Wiring structure, thin film transistor array substrate including the same, and display device |
CN201210440476.8A CN103091915B (zh) | 2011-11-07 | 2012-11-07 | 布线构造、包括它的薄膜晶体管阵列基板及显示装置 |
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JP2011243076A JP5863399B2 (ja) | 2011-11-07 | 2011-11-07 | 配線構造及びそれを備える薄膜トランジスタアレイ基板並びに表示装置 |
Publications (2)
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JP2013097349A JP2013097349A (ja) | 2013-05-20 |
JP5863399B2 true JP5863399B2 (ja) | 2016-02-16 |
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Country Status (3)
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US (1) | US8772781B2 (ja) |
JP (1) | JP5863399B2 (ja) |
CN (1) | CN103091915B (ja) |
Families Citing this family (8)
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JP5520897B2 (ja) * | 2011-08-11 | 2014-06-11 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
CN104062818B (zh) * | 2014-06-27 | 2017-10-24 | 上海天马微电子有限公司 | 一种液晶显示装置及其制造方法 |
CN106575063B (zh) * | 2014-08-07 | 2019-08-27 | 夏普株式会社 | 有源矩阵基板、液晶面板以及有源矩阵基板的制造方法 |
US9869917B2 (en) * | 2014-08-07 | 2018-01-16 | Sharp Kabushiki Kaisha | Active matrix substrate and method for manufacturing the same |
CN104950539B (zh) * | 2015-07-15 | 2018-10-19 | 深圳市华星光电技术有限公司 | 一种显示面板的制作方法 |
CN105679763A (zh) * | 2016-01-05 | 2016-06-15 | 深圳市华星光电技术有限公司 | 一种阵列基板及其制作方法、显示面板 |
JP7208863B2 (ja) * | 2019-05-29 | 2023-01-19 | シャープ株式会社 | 表示装置の製造方法、および表示装置 |
CN112419881A (zh) * | 2019-08-20 | 2021-02-26 | 华为技术有限公司 | 一种盖板和显示屏 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH0258029A (ja) * | 1988-08-24 | 1990-02-27 | Hitachi Ltd | 液晶表示装置 |
JP3238020B2 (ja) * | 1994-09-16 | 2001-12-10 | 株式会社東芝 | アクティブマトリクス表示装置の製造方法 |
KR100482468B1 (ko) | 2000-10-10 | 2005-04-14 | 비오이 하이디스 테크놀로지 주식회사 | 프린지 필드 구동 액정 표시 장치 |
KR101294232B1 (ko) * | 2007-06-08 | 2013-08-07 | 엘지디스플레이 주식회사 | 프린지 필드 스위칭 모드 액정표시장치용 어레이 기판 및이의 제조 방법 |
US7923733B2 (en) * | 2008-02-07 | 2011-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2009194106A (ja) * | 2008-02-13 | 2009-08-27 | Nec Electronics Corp | 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の製造方法 |
JP5646162B2 (ja) | 2009-01-23 | 2014-12-24 | 三菱電機株式会社 | 薄膜トランジスタアレイ基板、その製造方法、及び液晶表示装置 |
KR101701212B1 (ko) * | 2010-08-11 | 2017-02-02 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
JP5671948B2 (ja) * | 2010-11-04 | 2015-02-18 | 三菱電機株式会社 | 薄膜トランジスタアレイ基板、及び液晶表示装置 |
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