JP2006159383A - 両面研磨用キャリア - Google Patents
両面研磨用キャリア Download PDFInfo
- Publication number
- JP2006159383A JP2006159383A JP2004358247A JP2004358247A JP2006159383A JP 2006159383 A JP2006159383 A JP 2006159383A JP 2004358247 A JP2004358247 A JP 2004358247A JP 2004358247 A JP2004358247 A JP 2004358247A JP 2006159383 A JP2006159383 A JP 2006159383A
- Authority
- JP
- Japan
- Prior art keywords
- carrier
- double
- polishing
- support frame
- carrier body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 92
- 230000002093 peripheral effect Effects 0.000 claims abstract description 38
- 230000033001 locomotion Effects 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000002131 composite material Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 abstract description 2
- 239000011347 resin Substances 0.000 abstract description 2
- 229920002302 Nylon 6,6 Polymers 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000011152 fibreglass Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 48
- 239000007788 liquid Substances 0.000 description 13
- 239000000969 carrier Substances 0.000 description 7
- 230000004308 accommodation Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000835 fiber Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 239000012050 conventional carrier Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000003365 glass fiber Substances 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000004677 Nylon Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 102100040287 GTP cyclohydrolase 1 feedback regulatory protein Human genes 0.000 description 1
- 101710185324 GTP cyclohydrolase 1 feedback regulatory protein Proteins 0.000 description 1
- 239000004918 carbon fiber reinforced polymer Substances 0.000 description 1
- 230000026058 directional locomotion Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
【解決手段】 ワークを収容するワーク収容孔11が設けられた円板状のキャリア本体10の外周側に、該本体を支持するべく厚肉に形成されたリング状の支持枠20を設ける。支持枠20の外周面に、駆動用の歯車30が噛み合う歯部21を形成する。支持枠20は、キャリア本体とは独立した別部材で構成されており、キャリア本体10をねじ40により着脱可能に支持する。キャリア本体10の材質をワーク保持に適したガラス繊維強化樹脂などにし、支持枠20の材質を歯車30による駆動に適した66ナイロンなどにする。
【選択図】 図1
Description
が、キャリア本体10のねじ挿通孔12,12 に対応するように設けられている。
用歯車30との噛み合いによっても繊維粉などが出ない66ナイロンが挙げられる。これ以外にはポリカーボネート、PVCなどの樹脂又はステンレス鋼などの金属の使用も可能である。
11 ワーク収容孔
12 ねじ挿通孔
13 小孔
14 凹部
20 支持枠
21 歯部
22 環状凹部
23 環状凸部
24 ねじ孔
30 駆動用歯車
31 環状支持部
40 ねじ
50 定盤
Claims (6)
- ワークを保持する一枚のキャリアを上下の回転定盤間に挾み、そのキャリアに対して、周方向の第1運動に半径方向の運動成分を含む第2運動を組み合わせた複合動作を行わせることにより、前記ワークを両面研磨するシングルキャリア方式で且つ複合動作方式の両面研磨装置に使用されるキャリアであって、前記ワークを収容するワーク収容孔が設けられた円板状のキャリア本体と、該本体を支持するべくその外周側に設けられ、該本体より厚肉に形成されると共に、駆動用の歯車が噛み合う歯部が外周面に形成されたリング状の支持枠とを具備することを特徴とする両面研磨用キャリア。
- 前記支持枠は、内側のキャリア本体とは独立した別部材であり、そのキャリア本体を脱着可能に支持することを特徴とする請求項1に記載の両面研磨用キャリア。
- 前記支持枠は、前記キャリア本体とは異なる材質の材料により構成されていることを特徴とする請求項2に記載の両面研磨用キャリア。
- 前記キャリア本体の上面は前記支持枠の上面と同一レベルかそれよりも高い位置に位置することを特徴とする請求項1に記載の両面研磨用キャリア。
- 前記キャリア本体の上面は前記支持枠の上面より低いレベルに位置することを特徴とする請求項1に記載の両面研磨用キャリア。
- 請求項1〜5のいずれか記載の両面研磨用キャリアを使用することを特徴とする半導体ウェーハの研磨方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004358247A JP4727218B2 (ja) | 2004-12-10 | 2004-12-10 | 両面研磨用キャリア |
TW094140774A TWI271263B (en) | 2004-12-10 | 2005-11-21 | A double side polishing carrier and method of polishing semiconductor wafers |
KR1020050118417A KR100695341B1 (ko) | 2004-12-10 | 2005-12-06 | 양면 연마용 캐리어 및 반도체 웨이퍼의 연마 방법 |
US11/296,488 US20060128276A1 (en) | 2004-12-10 | 2005-12-08 | Carrier for double side polishing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004358247A JP4727218B2 (ja) | 2004-12-10 | 2004-12-10 | 両面研磨用キャリア |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006159383A true JP2006159383A (ja) | 2006-06-22 |
JP4727218B2 JP4727218B2 (ja) | 2011-07-20 |
Family
ID=36584640
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004358247A Active JP4727218B2 (ja) | 2004-12-10 | 2004-12-10 | 両面研磨用キャリア |
Country Status (4)
Country | Link |
---|---|
US (1) | US20060128276A1 (ja) |
JP (1) | JP4727218B2 (ja) |
KR (1) | KR100695341B1 (ja) |
TW (1) | TWI271263B (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009285768A (ja) * | 2008-05-28 | 2009-12-10 | Sumco Corp | 半導体ウェーハの研削方法および研削装置 |
KR101285897B1 (ko) | 2012-02-28 | 2013-07-12 | 주식회사 엘지실트론 | 웨이퍼 연마장치 및 웨이퍼를 연마하는 방법 |
JP2014195119A (ja) * | 2011-09-15 | 2014-10-09 | Siltronic Ag | 半導体ウェハの両面研磨方法 |
JP2017071040A (ja) * | 2015-10-09 | 2017-04-13 | 株式会社Sumco | キャリアリング、研削装置および研削方法 |
JP2018047552A (ja) * | 2017-12-25 | 2018-03-29 | 信越半導体株式会社 | ウェーハ保持用キャリアの評価方法及び設計方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5076723B2 (ja) * | 2007-08-09 | 2012-11-21 | 富士通株式会社 | 研磨装置、基板及び電子機器の製造方法 |
KR100897677B1 (ko) | 2007-10-29 | 2009-05-14 | 주식회사 실트론 | 기판 양면연마 장치용 캐리어 플레이트 |
DE102010063179B4 (de) * | 2010-12-15 | 2012-10-04 | Siltronic Ag | Verfahren zur gleichzeitigen Material abtragenden Bearbeitung beider Seiten mindestens dreier Halbleiterscheiben |
JP5748717B2 (ja) | 2012-09-06 | 2015-07-15 | 信越半導体株式会社 | 両面研磨方法 |
US10354905B2 (en) * | 2015-03-11 | 2019-07-16 | Nv Bekaert Sa | Carrier for temporary bonded wafers |
CN112571261B (zh) * | 2020-12-31 | 2022-07-22 | 重庆化工职业学院 | 一种计算机箱体抛光装置 |
CN114800109A (zh) * | 2022-06-27 | 2022-07-29 | 苏州博宏源机械制造有限公司 | 双面抛光机及其抛光方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59156755A (ja) * | 1983-02-25 | 1984-09-06 | Kyowa Leather Kk | 多段多色シ−ト状物の製造法及びその装置 |
JPH02284864A (ja) * | 1989-04-25 | 1990-11-22 | Koei Sangyo Kk | ラップ盤 |
JPH07116957A (ja) * | 1993-10-23 | 1995-05-09 | Koei Sangyo Kk | ラップ盤の加工物取出し装置 |
JPH08112751A (ja) * | 1994-10-17 | 1996-05-07 | Koei Sangyo Kk | ラップ盤のキャリア |
JPH1076460A (ja) * | 1996-08-30 | 1998-03-24 | Shin Etsu Handotai Co Ltd | 薄板の研磨方法および研磨装置 |
JPH10175159A (ja) * | 1996-12-18 | 1998-06-30 | Nippon Electric Glass Co Ltd | 板状物の両面研磨装置 |
JP2001341069A (ja) * | 2000-05-31 | 2001-12-11 | Mitsubishi Materials Silicon Corp | 両面研磨装置を用いた半導体ウェーハの研磨方法 |
Family Cites Families (14)
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US1536714A (en) * | 1921-04-04 | 1925-05-05 | Pratt & Whitney Co | Apparatus for and method of making similar articles |
JPS59156755U (ja) * | 1983-04-06 | 1984-10-20 | 株式会社 市川製作所 | 両面研上盤 |
US4827527A (en) * | 1984-08-30 | 1989-05-02 | Nec Corporation | Pre-processing system for pre-processing an image signal succession prior to identification |
DE3624878A1 (de) * | 1985-07-31 | 1987-02-12 | Speedfam Corp | Flachlaeppmaschine |
JPH0646854U (ja) * | 1992-11-27 | 1994-06-28 | 直江津精密加工株式会社 | 半導体ウエハ等の研磨用キャリア |
JP3379097B2 (ja) * | 1995-11-27 | 2003-02-17 | 信越半導体株式会社 | 両面研磨装置及び方法 |
US6296553B1 (en) * | 1997-04-02 | 2001-10-02 | Nippei Toyama Corporation | Grinding method, surface grinder, workpiece support, mechanism and work rest |
JP4256977B2 (ja) * | 1999-04-13 | 2009-04-22 | 不二越機械工業株式会社 | 両面研磨装置システム |
US6210259B1 (en) * | 1999-11-08 | 2001-04-03 | Vibro Finish Tech Inc. | Method and apparatus for lapping of workpieces |
WO2001082354A1 (fr) * | 2000-04-24 | 2001-11-01 | Sumitomo Mitsubishi Silicon Corporation | Procédé de fabrication d'une plaquette de semi-conducteur |
DE10023002B4 (de) * | 2000-05-11 | 2006-10-26 | Siltronic Ag | Satz von Läuferscheiben sowie dessen Verwendung |
KR100932741B1 (ko) * | 2002-03-28 | 2009-12-21 | 신에쯔 한도타이 가부시키가이샤 | 웨이퍼의 양면연마장치 및 양면연마방법 |
JP2004106173A (ja) * | 2002-08-29 | 2004-04-08 | Fujikoshi Mach Corp | 両面研磨装置 |
JP4343020B2 (ja) * | 2003-12-22 | 2009-10-14 | 株式会社住友金属ファインテック | 両面研磨方法及び装置 |
-
2004
- 2004-12-10 JP JP2004358247A patent/JP4727218B2/ja active Active
-
2005
- 2005-11-21 TW TW094140774A patent/TWI271263B/zh active
- 2005-12-06 KR KR1020050118417A patent/KR100695341B1/ko active IP Right Grant
- 2005-12-08 US US11/296,488 patent/US20060128276A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59156755A (ja) * | 1983-02-25 | 1984-09-06 | Kyowa Leather Kk | 多段多色シ−ト状物の製造法及びその装置 |
JPH02284864A (ja) * | 1989-04-25 | 1990-11-22 | Koei Sangyo Kk | ラップ盤 |
JPH07116957A (ja) * | 1993-10-23 | 1995-05-09 | Koei Sangyo Kk | ラップ盤の加工物取出し装置 |
JPH08112751A (ja) * | 1994-10-17 | 1996-05-07 | Koei Sangyo Kk | ラップ盤のキャリア |
JPH1076460A (ja) * | 1996-08-30 | 1998-03-24 | Shin Etsu Handotai Co Ltd | 薄板の研磨方法および研磨装置 |
JPH10175159A (ja) * | 1996-12-18 | 1998-06-30 | Nippon Electric Glass Co Ltd | 板状物の両面研磨装置 |
JP2001341069A (ja) * | 2000-05-31 | 2001-12-11 | Mitsubishi Materials Silicon Corp | 両面研磨装置を用いた半導体ウェーハの研磨方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009285768A (ja) * | 2008-05-28 | 2009-12-10 | Sumco Corp | 半導体ウェーハの研削方法および研削装置 |
JP2014195119A (ja) * | 2011-09-15 | 2014-10-09 | Siltronic Ag | 半導体ウェハの両面研磨方法 |
US9308619B2 (en) | 2011-09-15 | 2016-04-12 | Siltronic Ag | Method for the double-side polishing of a semiconductor wafer |
KR101285897B1 (ko) | 2012-02-28 | 2013-07-12 | 주식회사 엘지실트론 | 웨이퍼 연마장치 및 웨이퍼를 연마하는 방법 |
JP2017071040A (ja) * | 2015-10-09 | 2017-04-13 | 株式会社Sumco | キャリアリング、研削装置および研削方法 |
US11052506B2 (en) | 2015-10-09 | 2021-07-06 | Sumco Corporation | Carrier ring, grinding device, and grinding method |
JP2018047552A (ja) * | 2017-12-25 | 2018-03-29 | 信越半導体株式会社 | ウェーハ保持用キャリアの評価方法及び設計方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4727218B2 (ja) | 2011-07-20 |
TW200631730A (en) | 2006-09-16 |
US20060128276A1 (en) | 2006-06-15 |
TWI271263B (en) | 2007-01-21 |
KR20060065502A (ko) | 2006-06-14 |
KR100695341B1 (ko) | 2007-03-16 |
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