US20060128276A1 - Carrier for double side polishing - Google Patents

Carrier for double side polishing Download PDF

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Publication number
US20060128276A1
US20060128276A1 US11/296,488 US29648805A US2006128276A1 US 20060128276 A1 US20060128276 A1 US 20060128276A1 US 29648805 A US29648805 A US 29648805A US 2006128276 A1 US2006128276 A1 US 2006128276A1
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United States
Prior art keywords
carrier
support frame
carrier body
double side
wafer
Prior art date
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Abandoned
Application number
US11/296,488
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English (en)
Inventor
Akira Horiguchi
Shoji Nakao
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Sumco Corp
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Sumco Corp
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Assigned to SUMCO CORPORATION reassignment SUMCO CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HORIGUCHI, AKIRA, NAKAO, SHOJI
Publication of US20060128276A1 publication Critical patent/US20060128276A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/28—Work carriers for double side lapping of plane surfaces

Definitions

  • the invention relates to a double side polishing carrier suitably used for polishing both sides of a semiconductor wafer as a raw material of a semiconductor device. Specifically, the invention relates to a double side polishing carrier suitably used in a single wafer type double side polisher.
  • a double side polisher having a planetary gear mechanism has frequently been used for double side polishing of semiconductor wafers.
  • the planetary gear type double side polisher is a kind of batch processing apparatus in which both sides of a plurality of wafers are polished simultaneously.
  • a plurality of carriers are arranged about the rotating center of upper and lower rotating surface plates.
  • Each of the plurality of carriers has a sufficiently smaller diameter than the surface plates.
  • the carrier While holding one or a plurality of wafers, the carrier rotates in an interstitial space between the upper and lower surface plates. Along with rotating, the carrier also revolves around the rotation center of the surface plates. By this epicyclic movement of carriers in the interstitial space between the surface plates, both sides of a wafer held in each carrier are polished.
  • a multi-carrier type polisher using a plurality of carriers is not preferable for double side polishing of such a large sized wafer, since the large wafer size requires a large apparatus. In such a large apparatus, a reduction of maintenance performance cannot be avoided. For example, in such a large apparatus, maintaining precision, and general maintenance and inspection of the apparatus are difficult. In addition, in order to satisfy a requirement for a highly flat wafer surface, it is desirable that working conditions for manufacturing wafers are optimized for each single wafer. From such a point of view, a single wafer type polisher is considered as preferable for double side polishing of large sized wafers.
  • a single wafer type double side polisher is a single carrier type apparatus using a single carrier having a diameter larger than the diameter of upper and lower rotating surface plates. This is the most important characteristic structure of the single wafer type double side polisher.
  • a wafer is held in a carrier having a larger diameter than the wafer. Both sides of the large sized wafer are polished by a circular movement of the carrier in an interstitial space between the upper and lower rotating surface plates.
  • the multi-carrier type polisher which simultaneously polishes a plurality of wafers held in a plurality of carriers, downsizing and cost reduction can be expected in the single wafer type double side polisher.
  • Japanese Unexamined Patent Application, First Publication No. 2001-315057 discloses a single wafer type double side polisher.
  • a carrier holds a wafer in an eccentric position.
  • the carrier is arranged concentrically with the upper and lower surface plates, and rotates around the center axis.
  • the wafer held in the eccentric position of the carrier revolves around the center of the carrier in an interstitial space between the rotating surface plates.
  • both sides of the wafer are polished.
  • Circumferential velocity of a portion of the rotating surface plate increases with distance from the center from zero velocity at the center towards a maximum velocity at the periphery of the rotating surface plate. Therefore, polishing rate by the surface plate also differs significantly between the center portion and peripheral portion of the surface plate.
  • the single wafer type double side polisher has a principal structure that uses the entire portion of the surface plates for polishing a single wafer. Therefore, unevenness of polishing caused by an inequality in circumferential velocity of the portion of the surface plate is not negligible. From this point of view, compared to the multi-carrier type double side polisher using a plurality of carriers simultaneously, for example, like the planetary gear type double side polisher, the single wafer type double side polisher is disadvantageous for retaining flatness of a wafer.
  • the plurality of carriers placed in the interstitial space between the upper and lower surface plates are arranged near the outer periphery of the surface plates. Therefore, the difference of circumferential velocity between the outer portion and inner portion of the surface plate has little influence on the wafer polishing. As a result, along with the effects of revolution and rotation of the carriers, the wafers held in the carriers are evenly polished.
  • the wafer In the practical polishing process by a single wafer type double side polisher, the wafer itself rotates in the carrier.
  • a countermeasure for example, by supplying more abrasive fluid to the center portion than to the outer portion of the plate, unevenness of the wafer surface is maintained below the value expected from the partial inequality in circumferential velocity of the plate.
  • a carrier movement includes a circular movement around an eccentric position remote from the center as well as rotation in the circumferential direction. Where necessary, rotating surface plates are moved in a direction perpendicular to their rotation axis.
  • an increase in wafer thickness is restricted to a lower level.
  • a normal thickness of a 300 mm wafer is 0.775 mm.
  • a carrier used to finish the wafer so as to have such thickness generally has a thickness of about 0.75 mm.
  • the carrier is made of a highly rigid material such as glass fiber-reinforced epoxy resin.
  • the carrier has a significantly larger size than the surface plates, only a central portion of the carrier is supported by the surface plates, and a large unsupported overhanging portion of the carrier is deformed by the load in the thickness direction. As a result, a failure of the carrier occurs frequently.
  • the deformed carrier made of a highly rigid material applies a load on the surface plates.
  • Such a load destabilizes the load applied from the surface plates to the wafer, and therefore, reduces the precision of polishing.
  • the carrier made of glass fiber-reinforced epoxy resin generates a fine fibrous powder along with the driving of the carrier by driving gears arranged around the outer periphery of the carrier.
  • This fibrous powder also has an adverse effect on the polishing, for example, by cutting flaws on the wafer surface.
  • An object of the present invention is to provide a double side polishing carrier (a carrier used for polishing of both sides of workpieces), which can be used for single carrier type double side polisher.
  • a double side polishing carrier a carrier used for polishing of both sides of workpieces
  • the carrier has a large diameter and is moved with compound movement including a radial component, deformation of an overhanging portion of the carrier, failure of the carrier caused by the deformation, and reduction of precision in polishing can effectively be prevented.
  • a double side polishing carrier of the invention is used in a single carrier type double side polisher which moves the carrier with compound movement.
  • the carrier holding a workpiece (for example a wafer) is inserted between upper and lower surface plates of the polisher.
  • the compound movement of the carrier includes a first movement in the circumferential direction, and a second movement having a radial component. By this compound movement, the workpiece held in the carrier is polished.
  • the carrier comprises a disk shape carrier body having at least one opening (workpiece housing hole) for holding the workpiece; and a ring-shaped support frame which is provided at the outer periphery of the carrier body to support the carrier body.
  • the support frame is formed thicker than the carrier body and has teeth in its periphery to engage with driving gears.
  • the carrier Since the double side polishing carrier of the invention is used in the single carrier type and compound movement type double-side polisher, the carrier has a large overhanging portion outside the surface plate.
  • a thick support frame is provided to support the carrier body. Therefore, running torque applied by the driving gear is accepted by the thick support frame, and deformation of the carrier in the thickness direction is restricted.
  • a support frame of 10 mm in thickness and 15 mm in radial width from an inner circumferential edge to an outer edge of a tooth (addendum circle) may be used.
  • the peripheral support frame may be formed in integrally with the inner carrier body, or may be formed of a different member independent of the inner carrier body.
  • the support frame may be made of a material different from the carrier body. For example, if the support frame is made of a material generating no fibrous powder, for example nylon 66 or the like, an adverse effect on polishing caused by the fibrous powder can be avoided.
  • the carrier body supported by the frame may be removable.
  • the support frame it is possible to use the support frame for a long period by exchanging the carrier body.
  • wear depletion of the frame caused by engagement with the driving gears is reduced and the life-span of the frame is lengthened.
  • the support frame for a long period and changing the carrier body only, the cost of the carrier is reduced. Since the carrier body itself does not have teeth, the carrier body may be provided at a lower cost than that of a conventional carrier.
  • a double side polishing carrier of the invention may have dimensions as follows.
  • an external diameter D 2 of a thin carrier body inserted between the surface plates is not smaller than 1.2 ⁇ D 1 and not larger than 1.8 ⁇ D 1 . More preferably, D 2 is not smaller than 1.3 ⁇ D 1 and not larger than 1.5 ⁇ D 1 (see FIG. 2 ).
  • the overhanging portion is limited to have small area. In such a case, deformation of the overhanging portion remains below an allowable level. It is of no advantage and impractical to have an external diameter D 2 of the carrier body that is much larger than the diameter D 1 of the surface plate. Even if such a carrier is realized, deformation of the carrier cannot be sufficiently inhibited.
  • a preferable thickness d 2 of a support frame is, not smaller than 10 ⁇ d 1 and not larger than 30 ⁇ d 1 . More preferably, d 2 is not smaller than 15 ⁇ d 1 and not larger than 20 ⁇ d 1 ( FIG. 1 ).
  • the thickness d 1 of the carrier body is determined based on the finished thickness of the workpiece. For example, a thickness of a carrier body used for polishing a silicon wafer is about 0.7 mm.
  • a width W of the support frame in the radial direction is preferably not smaller than 0.05 ⁇ D 2 and not larger than 0.1 ⁇ D 2 , where D 2 is the external diameter of the carrier body. More preferably, W is not smaller than 0.07 ⁇ D 2 and not larger than 0.08 ⁇ D 2 .
  • W is not smaller than 0.07 ⁇ D 2 and not larger than 0.08 ⁇ D 2 .
  • the upper level of the carrier body may be coincident with the upper level of the support frame. Alternatively, it may be lower than the upper level of the support frame.
  • abrasive fluid supplied to the surface of the carrier is smoothly drained to the periphery without being prevented by the support frame surrounding the carrier body.
  • abrasive fluid supplied to the surface of the carrier remains on the surface of the carrier body, and a workpiece is polished within the fluid. That is, the latter constitution enables a submerged polishing of the workpiece.
  • a peripheral portion of the carrier is made to have a large thickness.
  • the purpose of this constitution is to fix the relative position of the concentrically rotating carrier and the surface plate by providing the carrier with a recessed portion to which the surface plate is fitted.
  • the thin portion of the carrier has the same external diameter as the diameter of the surface plate. Therefore, the thin portion of the carrier does not overhang outside the surface plate, and is not deformed.
  • the peripheral portion of the carrier is only slightly thicker than the thin portion, since the purpose of the formation of the thick portion is not to support the carrier strength, but to provide a recessed portion to which the surface plate is fitted. Therefore, a usage, constitution, and effect of the thick portion of the carrier is significantly different from the support frame of the double side polishing carrier of the present invention.
  • the carrier of the present invention is particularly effective for the single wafer type polishing method, in which a single wafer is held in a single carrier. While, the carrier of the invention may also be applied to a multi-carrier type polishing method in which a plurality of wafers are held in a single carrier. In the latter case, the carrier body is provided with a plurality of workpiece housing holes for holding wafers.
  • the double side polishing carrier of the invention is a large sized carrier used in a single carrier type double side polisher by moving the carrier with a compound movement including a radial component.
  • a thick ring-shaped support frame is provided at the outer periphery of the disk-shaped carrier body having workpiece housing hole for holding a workpiece.
  • FIG. 1 is a cross section of a main portion of a double side polishing carrier in a first embodiment of the invention.
  • FIG. 2A is a plan view of a carrier body of the carrier in FIG. 1 .
  • FIG. 2B is a cross section of the carrier body along the line b-b of FIG. 2A .
  • FIG. 3A is a plan view of a support frame of the carrier in FIG. 1 .
  • FIG. 3B is a cross section of the support frame along the line b-b of FIG. 3A .
  • FIG. 4 is a plan view of a carrier body of the carrier in a second embodiment of the invention.
  • FIG. 5 is a plan view of a carrier body of the carrier in a third embodiment of the invention.
  • FIG. 1 is a partial cross section showing a constitution of a double side polishing carrier in a first embodiment of the invention.
  • FIGS. 2A and 2B are respectively a plan view and a cross section of a carrier body of the carrier.
  • FIGS. 3A and 3B are respectively a plan view and a cross section of a support frame of the carrier.
  • the double side polishing carrier is provided with a disk-shaped carrier body 10 , and a ring-shaped support frame 20 attached to the periphery of the carrier body for supporting the main body.
  • the support frame 20 is independent from the carrier body 10 , and thus removable, and is fixed to the carrier body through screws 40 .
  • the double side polishing carrier of this embodiment may be used for polishing a wafer of 300 mm in diameter.
  • a workpiece housing hole 11 is provided in the central portion of the carrier body 10 for holding a workpiece.
  • the workpiece housing hole is perforated in a concentric position, or in a slightly eccentric position compared to the center of the carrier body.
  • a plurality of tapped holes 12 are provided with a predetermined interval in the circumferential direction of the carrier body for fixing the carrier body 10 to the support frame 20 .
  • the carrier body 10 moves in a plane perpendicular to the central axis of the surface plates. Therefore, the carrier body is made to have a constant thickness throughout its entire portion, and the thickness is controlled to be slightly thinner than a finished thickness of a wafer. For example, for a wafer of 0.775 mm in finished thickness, a preferable thickness of the carrier body 10 is about 0.75 mm. By this thickness a predetermined load is loaded on both surfaces of the wafer until the end stage of polishing.
  • the carrier body 10 is made of material such as, for example, epoxy resin reinforced with glass fiber (GFRP). Alternatively, carbon fiber-reinforced plastic (CFRP), and metals such as SK steel may also be used as the material for the carrier body 10 .
  • GFRP epoxy resin reinforced with glass fiber
  • CFRP carbon fiber-reinforced plastic
  • metals such as SK steel may also be used as the material for the carrier body 10 .
  • the selected material needs to satisfy a requirement of having high strength as a thin member.
  • External diameter D 2 of the carrier body 10 is determined depending on the momentum of the carrier placed between the upper and lower surface plate, especially on the momentum in the radial direction in a plane perpendicular to the center axis of the surface plates. For example, for a workpiece housing hole 11 of slightly larger than 300 mm in diameter, D 2 is selected from the range of 480 to 490 mm. If the carrier has only a small momentum in the radial direction, the carrier body 10 may have a small external diameter D 2 . If the carrier has a large momentum in the radial direction, a large external diameter D 2 is needed for the carrier body 10 .
  • the support frame 20 is a ring attached to the outer periphery of the carrier body 10 .
  • the support frame 20 is designed to be sufficiently thicker than the carrier body 10 .
  • the support frame is designed to have a thickness of about 10 mm.
  • the self-strength of the support frame also depends on a radial width W of the frame.
  • the support frame is designed to have a width W of, for example, about 20 mm.
  • the support frame 20 is provided with a teeth portion 21 by which the support frame 20 engages with a plurality of driving gears 30 .
  • a back surface (lower surface during polishing ) of the support frame is provided with a ring-shaped recessed portion 22 to which the outer periphery of the carrier body is fitted.
  • the recessed portion has an L-like contour opened towards the inner side of the frame.
  • the front side (upper side during polishing ) of the support frame is provided with a ring-shaped protruding portion 23 by which the carrier body 10 is supported.
  • a plurality of tapped holes 24 , 24 are provided to be coincident with holes 12 , 12 of the carrier body 10 for inserting the screws 40 .
  • a preferable depth of the ring-shaped recessed portion 22 is, for example, 4 mm.
  • the thickness of the ring-shaped protruding portion 23 is 6 mm.
  • the support frame 20 Since the support frame 20 has little limitation on its dimensions, it is easy to provide sufficient strength to the support frame 20 . Therefore, the support frame 20 may be made of various materials including, for example, nylon 66 which has relatively high strength but is inexpensive. The support frame 20 made of nylon 66 generates no fibrous powder by engaging with the driving gears 30 . Alternatively, resins such as polycarbonate or PVC, and metals such as stainless steel may also be used as a material of the support frame 20 .
  • a wafer is held in a workpiece housing hole 11 in the carrier body 10 .
  • the carrier body 10 is inserted between upper and lower surface plates 50 (see FIG. 2 ).
  • the carrier is rotated in the circumferential direction by the driving gears 30 engaging with the teeth portion 21 of the support frame 20 from the outer periphery of the support frame 20 .
  • the carrier is subjected to a circular movement around an eccentric position distant from the center of the carrier.
  • the carrier moves with compound movement including a first movement in the circumferential direction and a second movement having a radial component.
  • Such a complex movement of the carrier enhances the flatness of the wafer.
  • the carrier is subjected to a rotation torque by the plurality of driving gears 30 arranged around the outer periphery of the carrier. Since the carrier has a larger diameter than the diameter of the surface plate, and is moved in the radial direction, the carrier exhibits a large overhanging portion. Although the carrier body 10 holding the wafer is thin, sufficient rigidity is given to the carrier body 10 supported by the thick support frame 20 arranged in the outer periphery of the carrier. Therefore, the overhanging portion of the carrier is substantially free from deformation in the thickness direction by the rotation torque applied by the driving gears 30 .
  • the inventors confirmed that during the double side polishing of wafers of 300 mm in diameter, by using the carrier of the invention, the failure frequency of carriers is reduced to a value not more than 0.1% of the case in which carriers having a constant thickness were used.
  • a load applied by the surface plate to the carrier is free from deviation caused by deformation of the carrier. Such a stabilized load enhances the precision in the polishing process.
  • the double side polishing carrier of the embodiment is surrounded by the ring-shaped protruding portion 23 of the support frame 20 , circular recess 14 is formed on the upper surface of the carrier body 10 . Abrasive fluid supplied during the wafer polishing process remains in the recess 14 , and as a result, the carrier can be applied to submerged wafer polishing.
  • the carrier body 10 When the inner surface of the workpiece housing hole 11 for holding the workpiece is damaged, the life of the carrier body 10 exceeds the working limit. At that time, the carrier body 10 is removed from the support frame 20 , and replaced by the new one. Thus, the support frame 20 may be used repeatedly and the carrier can be used for a long time only by changing the carrier body 10 . Since the carrier body 10 does not have teeth in its periphery, it is inexpensive compared with the conventional carrier. Therefore, by using the carrier of the invention, it is possible to reduce the cost of changing the carrier compared to the case using conventional carriers.
  • FIG. 4 is a plan view of a carrier body 10 used in a second embodiment of the invention.
  • the difference between this carrier body l and the above-described carrier body 10 of the first embodiment is that a plurality of holes 13 , 13 are provided around the periphery of the workpiece housing hole 11 . With these small holes 13 , 13 , drainage of abrasive fluid is enhanced. Even though the upper surface of the support frame 20 is placed at a higher level than the upper surface of the carrier body 10 , by providing the holes 13 , abrasive fluid may be effectively drained. By enhancing draining of the abrasive fluid, new abrasive fluid is continuously supplied to the carrier. Therefore, a workpiece is rapidly polished and the precision of the finished surface is enhanced.
  • a similar effect can be obtained by having the upper surface of the support frame 20 lower than the upper surface of the carrier body 10 .
  • draining of the abrasive fluid is further enhanced. While, in some cases of polishing, the above described submerged polishing is rather preferable.
  • FIG. 5 is a plan view of a carrier body 10 used in a third embodiment of the double side polishing carrier of the invention.
  • the carrier body 10 is different in that a plurality of workpiece housing holes 11 are provided to the carrier body 10 .
  • three workpiece housing holes 11 , 11 , and 11 each having a diameter slightly larger than the wafer diameter are arranged around the center at regular intervals.
  • the diameter D 1 of the surface plate is slightly larger than the diameter of the wafer.
  • surface plates having a diameter D 1 of 230 to 240 mm may preferably be used.
  • the diameter D 2 of the carrier body 10 and the size of the support frame 20 are the same as the other embodiment.
  • the support frame 20 can be reused even when a different type of carrier is applied, and thus it is highly advantageous.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
US11/296,488 2004-12-10 2005-12-08 Carrier for double side polishing Abandoned US20060128276A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004-358247 2004-12-10
JP2004358247A JP4727218B2 (ja) 2004-12-10 2004-12-10 両面研磨用キャリア

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JP (1) JP4727218B2 (ja)
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US20090075574A1 (en) * 2007-08-09 2009-03-19 Fujitsu Limited Polishing apparatus, substrate manufacturing method, and electronic apparatus manufacturing method
US20120156970A1 (en) * 2010-12-15 2012-06-21 Siltronic Ag Method for the simultaneous material-removing processing of both sides of at least three semiconductor wafers
US9308619B2 (en) 2011-09-15 2016-04-12 Siltronic Ag Method for the double-side polishing of a semiconductor wafer
US9987721B2 (en) 2012-09-06 2018-06-05 Shin-Etsu Handotai Co., Ltd. Double-side polishing method
CN108349058A (zh) * 2015-10-09 2018-07-31 胜高股份有限公司 承载环、磨削装置及磨削方法
US10354905B2 (en) * 2015-03-11 2019-07-16 Nv Bekaert Sa Carrier for temporary bonded wafers
CN112571261A (zh) * 2020-12-31 2021-03-30 重庆化工职业学院 一种计算机箱体抛光装置
CN114800109A (zh) * 2022-06-27 2022-07-29 苏州博宏源机械制造有限公司 双面抛光机及其抛光方法

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KR100897677B1 (ko) 2007-10-29 2009-05-14 주식회사 실트론 기판 양면연마 장치용 캐리어 플레이트
JP2009285768A (ja) * 2008-05-28 2009-12-10 Sumco Corp 半導体ウェーハの研削方法および研削装置
KR101285897B1 (ko) 2012-02-28 2013-07-12 주식회사 엘지실트론 웨이퍼 연마장치 및 웨이퍼를 연마하는 방법
JP6513174B2 (ja) * 2017-12-25 2019-05-15 信越半導体株式会社 ウェーハ保持用キャリアの設計方法

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KR20060065502A (ko) 2006-06-14
KR100695341B1 (ko) 2007-03-16

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