JP5076723B2 - 研磨装置、基板及び電子機器の製造方法 - Google Patents
研磨装置、基板及び電子機器の製造方法 Download PDFInfo
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- JP5076723B2 JP5076723B2 JP2007208398A JP2007208398A JP5076723B2 JP 5076723 B2 JP5076723 B2 JP 5076723B2 JP 2007208398 A JP2007208398 A JP 2007208398A JP 2007208398 A JP2007208398 A JP 2007208398A JP 5076723 B2 JP5076723 B2 JP 5076723B2
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- 238000005498 polishing Methods 0.000 title claims description 217
- 239000000758 substrate Substances 0.000 title claims description 94
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 238000000034 method Methods 0.000 title claims description 31
- 238000003860 storage Methods 0.000 claims description 66
- 239000000126 substance Substances 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000000428 dust Substances 0.000 description 42
- 239000012530 fluid Substances 0.000 description 34
- 125000006850 spacer group Chemical group 0.000 description 29
- 239000011521 glass Substances 0.000 description 28
- 239000002002 slurry Substances 0.000 description 26
- 239000000853 adhesive Substances 0.000 description 23
- 238000004140 cleaning Methods 0.000 description 23
- 230000001070 adhesive effect Effects 0.000 description 21
- 230000007246 mechanism Effects 0.000 description 19
- 230000004308 accommodation Effects 0.000 description 16
- 230000002093 peripheral effect Effects 0.000 description 16
- 230000008569 process Effects 0.000 description 14
- 230000003746 surface roughness Effects 0.000 description 10
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 238000001816 cooling Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 238000000227 grinding Methods 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000007730 finishing process Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000013013 elastic material Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- 125000003158 alcohol group Chemical group 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000007779 soft material Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Description
前記ワークを収納する収納穴を有するキャリアと、
前記収納穴に配置された前記ワークに接触して固定する固定部材と、
を有することを特徴とする研磨装置。(1)
(付記2) 前記固定部材は、前記収納穴において前記キャリアと前記ワークとの間を接着する接着剤であることを特徴とする付記1に記載の研磨装置。
前記弾性部材は、前記複数のワークに接触することを特徴とする付記3に記載の研磨装置。
前記ワークを収納する収納穴を有するキャリアと、
前記収納穴に配置された前記ワークと前記キャリアの間に位置する弾性部材と、
を有することを特徴とする研磨装置。(2)
(付記7) 前記弾性部材は、前記ワークの外周側面の少なくとも一部に固定されていることを特徴とする付記6に記載の研磨装置。
(付記10) 前記研磨装置は、化学機械研磨によって前記ワークを研磨することを特徴とする付記1乃至9のうちいずれか一項に記載の研磨装置。(4)
(付記11) ワークの両面を同時に研磨する研磨装置に使用され、前記ワークを収納する収納穴を有するキャリアにおいて、
前記研磨装置の一対の研磨面に対向する両面の少なくとも一方に凹凸を有することを特徴とするキャリア。(5)
(付記12) 前記凹凸は、前記収納穴の外側に設けられ、前記収納穴よりも小さく、前記両面を貫通する複数の貫通孔であることを特徴とする付記11に記載のキャリア。(6)
(付記13) 前記凹凸は、前記両面の少なくとも一方に設けられた溝であることを特徴とする付記11に記載のキャリア。
(付記18) 基板を作成するステップと、前記基板に加工を施すステップと、を有する基板の製造方法において、
前記作成ステップは、ワークをラップする仕上げステップと、前記ワークを化学機械研磨する超仕上げステップと、を有し、
前記仕上げステップ及び前記超仕上げステップの少なくとも一方は、付記1乃至10及び17のうちいずれか一項に記載の研磨装置を使用することを特徴とする製造方法。(8)
(付記19) 基板を作成するステップと、前記基板を加工するステップと、前記基板を平坦化するステップとを有する基板の製造方法において、
前記作成ステップ及び前記平坦化ステップの少なくとも一方は、ワークをラップする仕上げステップと、前記ワークを化学機械研磨する超仕上げステップと、を有し、
前記仕上げステップ及び前記超仕上げステップの少なくとも一方は、付記1乃至10及び17のうちいずれか一項に記載の研磨装置を使用することを特徴とする基板の製造方法。(9)
(付記20) 付記18又は19に記載の基板の製造方法によって基板を製造するステップと、
電子部品を製造するステップと、
前記基板と前記電子部品から電子機器を製造するステップと、
を有することを特徴とする電子機器の製造方法。(10)
110−110L キャリア
113−113B 収納穴
117 貫通孔
120 接着剤
142、162 パッド
142a、162a パッド面(研磨面)
400 メムスセンサ(電子機器)
420 ガラス基板
430 メムスチップ(電子部品)
W ワーク
Claims (8)
- ワークの両面を同時に研磨する研磨装置であって、
前記ワークを収納する収納穴を有するキャリアと、
前記収納穴に配置された前記ワークに接触して固定する固定部材と、
を有し、
前記固定部材は、前記収納穴において前記ワークに弾性力を加える弾性部材であり、
前記弾性部材は、前記キャリアに係合するワイヤーリングであることを特徴とする研磨装置。 - 前記ワークを研磨する研磨面上に凹凸を有するパッドを更に有することを特徴とする請求項1に記載の研磨装置。
- 化学機械研磨によって前記ワークを研磨することを特徴とする請求項1又は2に記載の研磨装置。
- 前記キャリアは、前記研磨装置の一対の研磨面に対向する両面の少なくとも一方に凹凸を有することを特徴とする請求項1乃至3のうちいずれか一項に記載の研磨装置。
- 前記凹凸は、前記収納穴の外側に設けられ、前記収納穴よりも小さく、前記両面を貫通する複数の貫通孔であることを特徴とする請求項4に記載の研磨装置。
- 基板を作成するステップと、前記基板に加工を施すステップと、を有する基板の製造方法において、
前記作成ステップは、ワークをラップする仕上げステップと、前記ワークを化学機械研磨する超仕上げステップと、を有し、
前記仕上げステップ及び前記超仕上げステップの少なくとも一方は、請求項1乃至5のうちいずれか一項に記載の研磨装置を使用することを特徴とする製造方法。 - 基板を作成するステップと、前記基板を加工するステップと、前記基板を平坦化するステップとを有する基板の製造方法において、
前記作成ステップ及び前記平坦化ステップの少なくとも一方は、ワークをラップする仕上げステップと、前記ワークを化学機械研磨する超仕上げステップと、を有し、
前記仕上げステップ及び前記超仕上げステップの少なくとも一方は、請求項1乃至5に記載の研磨装置を使用することを特徴とする基板の製造方法。 - 請求項6又は7に記載の基板の製造方法によって基板を製造するステップと、
電子部品を製造するステップと、
前記基板と前記電子部品から電子機器を製造するステップと、
を有することを特徴とする電子機器の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007208398A JP5076723B2 (ja) | 2007-08-09 | 2007-08-09 | 研磨装置、基板及び電子機器の製造方法 |
US12/155,118 US8221198B2 (en) | 2007-08-09 | 2008-05-29 | Polishing apparatus for polishing a work having two surfaces |
EP08157349A EP2025466A3 (en) | 2007-08-09 | 2008-05-30 | Polishing apparatus, substrate manufacturing method, and electronic apparatus manufacturing method |
KR1020080051042A KR20090015792A (ko) | 2007-08-09 | 2008-05-30 | 연마 장치, 기판 및 전자기기의 제조 방법 |
CN2008100998864A CN101362310B (zh) | 2007-08-09 | 2008-05-30 | 抛光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007208398A JP5076723B2 (ja) | 2007-08-09 | 2007-08-09 | 研磨装置、基板及び電子機器の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2009039828A JP2009039828A (ja) | 2009-02-26 |
JP5076723B2 true JP5076723B2 (ja) | 2012-11-21 |
Family
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JP2007208398A Expired - Fee Related JP5076723B2 (ja) | 2007-08-09 | 2007-08-09 | 研磨装置、基板及び電子機器の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8221198B2 (ja) |
EP (1) | EP2025466A3 (ja) |
JP (1) | JP5076723B2 (ja) |
KR (1) | KR20090015792A (ja) |
CN (1) | CN101362310B (ja) |
Cited By (1)
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JP2007248291A (ja) * | 2006-03-16 | 2007-09-27 | Olympus Corp | 基板検査装置 |
US9707659B2 (en) * | 2010-12-27 | 2017-07-18 | Sumco Corporation | Method and apparatus for polishing workpiece |
JP5614397B2 (ja) * | 2011-11-07 | 2014-10-29 | 信越半導体株式会社 | 両面研磨方法 |
TWI465317B (zh) * | 2012-06-25 | 2014-12-21 | Sumco Corp | 工作件的硏磨方法及工作件的硏磨裝置 |
JP2014151376A (ja) * | 2013-02-05 | 2014-08-25 | Seiko Instruments Inc | ウエハ研磨方法及び電子デバイス製造方法 |
JP6197580B2 (ja) * | 2013-10-29 | 2017-09-20 | 株式会社Sumco | キャリアプレート及びワークの両面研磨装置 |
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CN110293481B (zh) * | 2019-06-26 | 2021-12-24 | 西安奕斯伟材料科技有限公司 | 一种研磨设备和研磨设备的清洁方法 |
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DE10018338C1 (de) * | 2000-04-13 | 2001-08-02 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer Halbleiterscheibe |
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JP2004283929A (ja) * | 2003-03-20 | 2004-10-14 | Shin Etsu Handotai Co Ltd | ウエーハ保持用キャリア並びにそれを用いた両面研磨装置及びウエーハの両面研磨方法 |
JP4149295B2 (ja) * | 2003-03-26 | 2008-09-10 | Sumco Techxiv株式会社 | ラップ盤 |
US7008308B2 (en) * | 2003-05-20 | 2006-03-07 | Memc Electronic Materials, Inc. | Wafer carrier |
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JP2006068895A (ja) | 2004-08-02 | 2006-03-16 | Showa Denko Kk | 研磨用キャリア及び磁気記録媒体用シリコン基板の製造方法並びに磁気記録媒体用シリコン基板 |
JP4727218B2 (ja) * | 2004-12-10 | 2011-07-20 | 株式会社住友金属ファインテック | 両面研磨用キャリア |
DE102005034119B3 (de) | 2005-07-21 | 2006-12-07 | Siltronic Ag | Verfahren zum Bearbeiten einer Halbleiterscheibe, die in einer Aussparung einer Läuferscheibe geführt wird |
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CN108789133A (zh) * | 2018-07-13 | 2018-11-13 | 航天精工股份有限公司 | 一种适用于轴承套圈的研磨载盘及研磨装置 |
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CN101362310B (zh) | 2012-06-13 |
US20090075574A1 (en) | 2009-03-19 |
KR20090015792A (ko) | 2009-02-12 |
US8221198B2 (en) | 2012-07-17 |
EP2025466A2 (en) | 2009-02-18 |
JP2009039828A (ja) | 2009-02-26 |
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EP2025466A3 (en) | 2009-04-01 |
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