TWI271263B - A double side polishing carrier and method of polishing semiconductor wafers - Google Patents

A double side polishing carrier and method of polishing semiconductor wafers Download PDF

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Publication number
TWI271263B
TWI271263B TW094140774A TW94140774A TWI271263B TW I271263 B TWI271263 B TW I271263B TW 094140774 A TW094140774 A TW 094140774A TW 94140774 A TW94140774 A TW 94140774A TW I271263 B TWI271263 B TW I271263B
Authority
TW
Taiwan
Prior art keywords
carrier
double
disc
support frame
polishing
Prior art date
Application number
TW094140774A
Other languages
English (en)
Chinese (zh)
Other versions
TW200631730A (en
Inventor
Akira Horiguchi
Shoji Nakao
Original Assignee
Kashiwara Machine Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kashiwara Machine Mfg Co Ltd filed Critical Kashiwara Machine Mfg Co Ltd
Publication of TW200631730A publication Critical patent/TW200631730A/zh
Application granted granted Critical
Publication of TWI271263B publication Critical patent/TWI271263B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/28—Work carriers for double side lapping of plane surfaces

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW094140774A 2004-12-10 2005-11-21 A double side polishing carrier and method of polishing semiconductor wafers TWI271263B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004358247A JP4727218B2 (ja) 2004-12-10 2004-12-10 両面研磨用キャリア

Publications (2)

Publication Number Publication Date
TW200631730A TW200631730A (en) 2006-09-16
TWI271263B true TWI271263B (en) 2007-01-21

Family

ID=36584640

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094140774A TWI271263B (en) 2004-12-10 2005-11-21 A double side polishing carrier and method of polishing semiconductor wafers

Country Status (4)

Country Link
US (1) US20060128276A1 (ja)
JP (1) JP4727218B2 (ja)
KR (1) KR100695341B1 (ja)
TW (1) TWI271263B (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5076723B2 (ja) * 2007-08-09 2012-11-21 富士通株式会社 研磨装置、基板及び電子機器の製造方法
KR100897677B1 (ko) 2007-10-29 2009-05-14 주식회사 실트론 기판 양면연마 장치용 캐리어 플레이트
JP2009285768A (ja) * 2008-05-28 2009-12-10 Sumco Corp 半導体ウェーハの研削方法および研削装置
DE102010063179B4 (de) * 2010-12-15 2012-10-04 Siltronic Ag Verfahren zur gleichzeitigen Material abtragenden Bearbeitung beider Seiten mindestens dreier Halbleiterscheiben
DE102011082777A1 (de) * 2011-09-15 2012-02-09 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
KR101285897B1 (ko) 2012-02-28 2013-07-12 주식회사 엘지실트론 웨이퍼 연마장치 및 웨이퍼를 연마하는 방법
JP5748717B2 (ja) 2012-09-06 2015-07-15 信越半導体株式会社 両面研磨方法
US10354905B2 (en) * 2015-03-11 2019-07-16 Nv Bekaert Sa Carrier for temporary bonded wafers
JP6707831B2 (ja) * 2015-10-09 2020-06-10 株式会社Sumco 研削装置および研削方法
JP6513174B2 (ja) * 2017-12-25 2019-05-15 信越半導体株式会社 ウェーハ保持用キャリアの設計方法
CN112571261B (zh) * 2020-12-31 2022-07-22 重庆化工职业学院 一种计算机箱体抛光装置
CN114800109A (zh) * 2022-06-27 2022-07-29 苏州博宏源机械制造有限公司 双面抛光机及其抛光方法

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US1536714A (en) * 1921-04-04 1925-05-05 Pratt & Whitney Co Apparatus for and method of making similar articles
JPS59156755A (ja) * 1983-02-25 1984-09-06 Kyowa Leather Kk 多段多色シ−ト状物の製造法及びその装置
JPS59156755U (ja) * 1983-04-06 1984-10-20 株式会社　市川製作所 両面研上盤
US4827527A (en) * 1984-08-30 1989-05-02 Nec Corporation Pre-processing system for pre-processing an image signal succession prior to identification
DE3624878A1 (de) * 1985-07-31 1987-02-12 Speedfam Corp Flachlaeppmaschine
JPH0729263B2 (ja) * 1989-04-25 1995-04-05 光永産業株式会社 ラップ盤
JPH0646854U (ja) * 1992-11-27 1994-06-28 直江津精密加工株式会社 半導体ウエハ等の研磨用キャリア
JP2673216B2 (ja) * 1993-10-23 1997-11-05 光永産業株式会社 ラップ盤の加工物取出し装置
JPH08112751A (ja) * 1994-10-17 1996-05-07 Koei Sangyo Kk ラップ盤のキャリア
JP3379097B2 (ja) * 1995-11-27 2003-02-17 信越半導体株式会社 両面研磨装置及び方法
JPH1076460A (ja) * 1996-08-30 1998-03-24 Shin Etsu Handotai Co Ltd 薄板の研磨方法および研磨装置
JPH10175159A (ja) * 1996-12-18 1998-06-30 Nippon Electric Glass Co Ltd 板状物の両面研磨装置
US6296553B1 (en) * 1997-04-02 2001-10-02 Nippei Toyama Corporation Grinding method, surface grinder, workpiece support, mechanism and work rest
JP4256977B2 (ja) * 1999-04-13 2009-04-22 不二越機械工業株式会社 両面研磨装置システム
US6210259B1 (en) * 1999-11-08 2001-04-03 Vibro Finish Tech Inc. Method and apparatus for lapping of workpieces
WO2001082354A1 (fr) * 2000-04-24 2001-11-01 Sumitomo Mitsubishi Silicon Corporation Procédé de fabrication d'une plaquette de semi-conducteur
DE10023002B4 (de) * 2000-05-11 2006-10-26 Siltronic Ag Satz von Läuferscheiben sowie dessen Verwendung
JP3791302B2 (ja) * 2000-05-31 2006-06-28 株式会社Ｓｕｍｃｏ 両面研磨装置を用いた半導体ウェーハの研磨方法
KR100932741B1 (ko) * 2002-03-28 2009-12-21 신에쯔 한도타이 가부시키가이샤 웨이퍼의 양면연마장치 및 양면연마방법
JP2004106173A (ja) * 2002-08-29 2004-04-08 Fujikoshi Mach Corp 両面研磨装置
JP4343020B2 (ja) * 2003-12-22 2009-10-14 株式会社住友金属ファインテック 両面研磨方法及び装置

Also Published As

Publication number Publication date
JP4727218B2 (ja) 2011-07-20
TW200631730A (en) 2006-09-16
JP2006159383A (ja) 2006-06-22
US20060128276A1 (en) 2006-06-15
KR20060065502A (ko) 2006-06-14
KR100695341B1 (ko) 2007-03-16

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