JP4343020B2 - 両面研磨方法及び装置 - Google Patents
両面研磨方法及び装置 Download PDFInfo
- Publication number
- JP4343020B2 JP4343020B2 JP2004127074A JP2004127074A JP4343020B2 JP 4343020 B2 JP4343020 B2 JP 4343020B2 JP 2004127074 A JP2004127074 A JP 2004127074A JP 2004127074 A JP2004127074 A JP 2004127074A JP 4343020 B2 JP4343020 B2 JP 4343020B2
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- Prior art keywords
- carrier
- surface plate
- center
- wafer
- double
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005498 polishing Methods 0.000 title claims description 82
- 238000000034 method Methods 0.000 title claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 28
- 235000012431 wafers Nutrition 0.000 description 94
- 239000000969 carrier Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 238000012935 Averaging Methods 0.000 description 3
- 230000001360 synchronised effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
研磨パッド:ローデル・ニッタ製研磨布SUBA800
研磨液:Nalco2350 20倍希釈液
20 下側の定盤
30 キャリア
40 キャリア駆動手段
41 ピニオンギヤ(偏心ギヤ)
42 駆動体
43 副駆動歯車
44 主駆動歯車
50 ウエーハ(ワーク)
D1 定盤10,20の直径
D2 キャリア30の直径
D3 ウエーハ50の直径
O1 定盤10,20の中心
O2 キャリア30の中心
O3 ウエーハ50の中心
δ1 キャリア30内におけるウエーハ50の偏心量
δ2 定盤中心に対するキャリア30の偏心量(キャリアの円運動半径)
Claims (4)
- 回転する上下の定盤間に定盤より大径のキャリアを配置し、該キャリア内に保持された定盤より小径のワークを同心保持又は偏心保持して、上下の定盤の回転により両面研磨する際に、前記キャリアを上下の定盤間に偏心配置し、前記キャリアに外側から噛み合う複数のギヤによって、前記キャリアをその中心回りに自転させながら、その中心から離れた位置を中心に円運動させることを特徴とする両面研磨方法。
- 上側の定盤を下側の定盤に対して中心軸に直角な方向へ相対的に往復移動させることを特徴とする請求項1に記載の両面研磨方法。
- 回転する上下の定盤と、上下の定盤より大径であり、且つ定盤より小径のワークを同心保持又は偏心保持して、上下の定盤間に偏心配置されるキャリアと、上下の定盤間に配置された前記キャリアをその中心回りに自転させるとともに、前記キャリアをその中心から離れた位置で、定盤の中心回りに円運動させるキャリア駆動手段とを具備し、
前記キャリア駆動手段は、キャリアの外周面に形成された外歯部に周方向の複数箇所で噛み合うと共に、各噛み合い位置でそれぞれが各中心から離れた位置を中心に同期して回転する複数の偏心ギヤを有する構成であることを特徴とする両面研磨装置。 - 上側の定盤を下側の定盤に対して中心軸に直角な方向へ相対的に往復移動させる定盤駆動手段を具備する請求項3に記載の両面研磨装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004127074A JP4343020B2 (ja) | 2003-12-22 | 2004-04-22 | 両面研磨方法及び装置 |
TW093138879A TWI273945B (en) | 2003-12-22 | 2004-12-15 | Double polishing method and device |
KR1020040107896A KR100780005B1 (ko) | 2003-12-22 | 2004-12-17 | 양면 연마 방법 및 장치 |
US11/014,776 US7029380B2 (en) | 2003-12-22 | 2004-12-20 | Double-side polishing method and apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003425289 | 2003-12-22 | ||
JP2004127074A JP4343020B2 (ja) | 2003-12-22 | 2004-04-22 | 両面研磨方法及び装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005205585A JP2005205585A (ja) | 2005-08-04 |
JP4343020B2 true JP4343020B2 (ja) | 2009-10-14 |
Family
ID=34752053
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004127074A Expired - Lifetime JP4343020B2 (ja) | 2003-12-22 | 2004-04-22 | 両面研磨方法及び装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7029380B2 (ja) |
JP (1) | JP4343020B2 (ja) |
KR (1) | KR100780005B1 (ja) |
TW (1) | TWI273945B (ja) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004283929A (ja) * | 2003-03-20 | 2004-10-14 | Shin Etsu Handotai Co Ltd | ウエーハ保持用キャリア並びにそれを用いた両面研磨装置及びウエーハの両面研磨方法 |
JP4343020B2 (ja) * | 2003-12-22 | 2009-10-14 | 株式会社住友金属ファインテック | 両面研磨方法及び装置 |
JP4727218B2 (ja) * | 2004-12-10 | 2011-07-20 | 株式会社住友金属ファインテック | 両面研磨用キャリア |
JP2009285768A (ja) * | 2008-05-28 | 2009-12-10 | Sumco Corp | 半導体ウェーハの研削方法および研削装置 |
JP5201457B2 (ja) * | 2008-06-06 | 2013-06-05 | 株式会社ニコン | 研磨システム |
DE102009038942B4 (de) * | 2008-10-22 | 2022-06-23 | Peter Wolters Gmbh | Vorrichtung zur beidseitigen Bearbeitung von flachen Werkstücken sowie Verfahren zur gleichzeitigen beidseitigen Material abtragenden Bearbeitung mehrerer Halbleiterscheiben |
US8488158B2 (en) * | 2008-11-18 | 2013-07-16 | Adapx, Inc. | Systems and methods for instructing a printer to optimize a printed digital pattern |
JP5399109B2 (ja) * | 2009-03-25 | 2014-01-29 | Hoya株式会社 | マスクブランク用基板の製造方法、マスクブランクの製造方法、及びマスクの製造方法 |
JP5663733B2 (ja) * | 2010-02-22 | 2015-02-04 | 秋田県 | 平面両面仕上げ方法及び平面両面仕上げ装置 |
US8641476B2 (en) | 2011-10-06 | 2014-02-04 | Wayne O. Duescher | Coplanar alignment apparatus for rotary spindles |
US8500515B2 (en) * | 2010-03-12 | 2013-08-06 | Wayne O. Duescher | Fixed-spindle and floating-platen abrasive system using spherical mounts |
US8740668B2 (en) * | 2010-03-12 | 2014-06-03 | Wayne O. Duescher | Three-point spindle-supported floating abrasive platen |
US8647171B2 (en) * | 2010-03-12 | 2014-02-11 | Wayne O. Duescher | Fixed-spindle floating-platen workpiece loader apparatus |
US8647170B2 (en) | 2011-10-06 | 2014-02-11 | Wayne O. Duescher | Laser alignment apparatus for rotary spindles |
US8602842B2 (en) * | 2010-03-12 | 2013-12-10 | Wayne O. Duescher | Three-point fixed-spindle floating-platen abrasive system |
US8696405B2 (en) | 2010-03-12 | 2014-04-15 | Wayne O. Duescher | Pivot-balanced floating platen lapping machine |
US8758088B2 (en) | 2011-10-06 | 2014-06-24 | Wayne O. Duescher | Floating abrading platen configuration |
US8647172B2 (en) | 2010-03-12 | 2014-02-11 | Wayne O. Duescher | Wafer pads for fixed-spindle floating-platen lapping |
CN102267080A (zh) * | 2010-06-03 | 2011-12-07 | 上海峰弘环保科技有限公司 | 一种用于ic卡研磨加工的圆盘式双面抛光机 |
US8337280B2 (en) | 2010-09-14 | 2012-12-25 | Duescher Wayne O | High speed platen abrading wire-driven rotary workholder |
US8430717B2 (en) | 2010-10-12 | 2013-04-30 | Wayne O. Duescher | Dynamic action abrasive lapping workholder |
US9604339B2 (en) | 2012-10-29 | 2017-03-28 | Wayne O. Duescher | Vacuum-grooved membrane wafer polishing workholder |
US8998677B2 (en) | 2012-10-29 | 2015-04-07 | Wayne O. Duescher | Bellows driven floatation-type abrading workholder |
US8845394B2 (en) | 2012-10-29 | 2014-09-30 | Wayne O. Duescher | Bellows driven air floatation abrading workholder |
US9199354B2 (en) | 2012-10-29 | 2015-12-01 | Wayne O. Duescher | Flexible diaphragm post-type floating and rigid abrading workholder |
US8998678B2 (en) | 2012-10-29 | 2015-04-07 | Wayne O. Duescher | Spider arm driven flexible chamber abrading workholder |
US9011207B2 (en) | 2012-10-29 | 2015-04-21 | Wayne O. Duescher | Flexible diaphragm combination floating and rigid abrading workholder |
US9039488B2 (en) | 2012-10-29 | 2015-05-26 | Wayne O. Duescher | Pin driven flexible chamber abrading workholder |
US9233452B2 (en) | 2012-10-29 | 2016-01-12 | Wayne O. Duescher | Vacuum-grooved membrane abrasive polishing wafer workholder |
CN103506934B (zh) * | 2013-08-05 | 2016-04-13 | 厦门金鹭特种合金有限公司 | 利用普通外圆磨床研磨大直径薄圆片工件外圆的辅助装置 |
TWI614799B (zh) * | 2014-05-16 | 2018-02-11 | Acm Res Shanghai Inc | 晶圓拋光方法 |
KR101572103B1 (ko) * | 2014-09-11 | 2015-12-04 | 주식회사 엘지실트론 | 웨이퍼 연마 장치 |
JP6707831B2 (ja) * | 2015-10-09 | 2020-06-10 | 株式会社Sumco | 研削装置および研削方法 |
US10926378B2 (en) | 2017-07-08 | 2021-02-23 | Wayne O. Duescher | Abrasive coated disk islands using magnetic font sheet |
JP6974116B2 (ja) * | 2017-10-27 | 2021-12-01 | 株式会社荏原製作所 | 基板保持装置並びに基板保持装置を備えた基板処理装置および基板処理方法 |
CN107855900B (zh) * | 2017-12-27 | 2024-01-16 | 中原工学院 | 一种两工位聚晶金刚石复合片类抛光机 |
US11691241B1 (en) * | 2019-08-05 | 2023-07-04 | Keltech Engineering, Inc. | Abrasive lapping head with floating and rigid workpiece carrier |
CN110814756B (zh) * | 2019-11-08 | 2021-07-02 | 唐山学院 | 多主轴可调轴距铣钻复合加工中心 |
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Family Cites Families (6)
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JP4256977B2 (ja) * | 1999-04-13 | 2009-04-22 | 不二越機械工業株式会社 | 両面研磨装置システム |
JP2001315057A (ja) * | 2000-05-11 | 2001-11-13 | Toshiba Ceramics Co Ltd | 枚葉式両面研磨装置 |
JP3791302B2 (ja) * | 2000-05-31 | 2006-06-28 | 株式会社Sumco | 両面研磨装置を用いた半導体ウェーハの研磨方法 |
KR100932741B1 (ko) * | 2002-03-28 | 2009-12-21 | 신에쯔 한도타이 가부시키가이샤 | 웨이퍼의 양면연마장치 및 양면연마방법 |
JP2004106173A (ja) * | 2002-08-29 | 2004-04-08 | Fujikoshi Mach Corp | 両面研磨装置 |
JP4343020B2 (ja) * | 2003-12-22 | 2009-10-14 | 株式会社住友金属ファインテック | 両面研磨方法及び装置 |
-
2004
- 2004-04-22 JP JP2004127074A patent/JP4343020B2/ja not_active Expired - Lifetime
- 2004-12-15 TW TW093138879A patent/TWI273945B/zh active
- 2004-12-17 KR KR1020040107896A patent/KR100780005B1/ko active IP Right Grant
- 2004-12-20 US US11/014,776 patent/US7029380B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW200529975A (en) | 2005-09-16 |
US20050159089A1 (en) | 2005-07-21 |
KR20050063694A (ko) | 2005-06-28 |
US7029380B2 (en) | 2006-04-18 |
JP2005205585A (ja) | 2005-08-04 |
TWI273945B (en) | 2007-02-21 |
KR100780005B1 (ko) | 2007-11-27 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |