EP2064710A4 - DEFORMATION-CONTROLLED STRUCTURES IN SEMICONDUCTOR INTERCONNECTS AND NANOMEMBRANES FOR STABLE ELECTRONIC DEVICES - Google Patents
DEFORMATION-CONTROLLED STRUCTURES IN SEMICONDUCTOR INTERCONNECTS AND NANOMEMBRANES FOR STABLE ELECTRONIC DEVICESInfo
- Publication number
- EP2064710A4 EP2064710A4 EP07841968A EP07841968A EP2064710A4 EP 2064710 A4 EP2064710 A4 EP 2064710A4 EP 07841968 A EP07841968 A EP 07841968A EP 07841968 A EP07841968 A EP 07841968A EP 2064710 A4 EP2064710 A4 EP 2064710A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- nanomembranes
- stretchable electronics
- buckling structures
- controlled buckling
- semiconductor interconnects
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/0078—Constitution or structural means for improving mechanical properties not provided for in B81B3/007 - B81B3/0075
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76832—Multiple layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8221—Three dimensional integrated circuits stacked in different levels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8258—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213, H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/4985—Flexible insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5387—Flexible insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1602—Diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0277—Bendability or stretchability details
- H05K1/0283—Stretchable printed circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0104—Properties and characteristics in general
- H05K2201/0133—Elastomeric or compliant polymer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09045—Locally raised area or protrusion of insulating substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
- H05K2203/0271—Mechanical force other than pressure, e.g. shearing or pulling
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/201—Integrated devices having a three-dimensional layout, e.g. 3D ICs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Materials Engineering (AREA)
- Led Device Packages (AREA)
- Thin Film Transistor (AREA)
- Micromachines (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Optical Integrated Circuits (AREA)
- Light Receiving Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Pressure Sensors (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
- Structure Of Printed Boards (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US82468306P | 2006-09-06 | 2006-09-06 | |
US94462607P | 2007-06-18 | 2007-06-18 | |
PCT/US2007/077759 WO2008030960A2 (en) | 2006-09-06 | 2007-09-06 | Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2064710A2 EP2064710A2 (en) | 2009-06-03 |
EP2064710A4 true EP2064710A4 (en) | 2011-05-04 |
Family
ID=39158048
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP07841968A Ceased EP2064710A4 (en) | 2006-09-06 | 2007-09-06 | DEFORMATION-CONTROLLED STRUCTURES IN SEMICONDUCTOR INTERCONNECTS AND NANOMEMBRANES FOR STABLE ELECTRONIC DEVICES |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP2064710A4 (ko) |
JP (3) | JP5578509B2 (ko) |
KR (5) | KR101453419B1 (ko) |
CN (2) | CN101681695B (ko) |
MY (2) | MY149475A (ko) |
TW (3) | TWI587527B (ko) |
WO (1) | WO2008030960A2 (ko) |
Families Citing this family (172)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7557433B2 (en) | 2004-10-25 | 2009-07-07 | Mccain Joseph H | Microelectronic device with integrated energy source |
US7799699B2 (en) | 2004-06-04 | 2010-09-21 | The Board Of Trustees Of The University Of Illinois | Printable semiconductor structures and related methods of making and assembling |
JP2008502151A (ja) | 2004-06-04 | 2008-01-24 | ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ | 印刷可能半導体素子を製造して組み立てるための方法及びデバイス |
US7521292B2 (en) | 2004-06-04 | 2009-04-21 | The Board Of Trustees Of The University Of Illinois | Stretchable form of single crystal silicon for high performance electronics on rubber substrates |
US8217381B2 (en) | 2004-06-04 | 2012-07-10 | The Board Of Trustees Of The University Of Illinois | Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics |
CN101517700B (zh) | 2006-09-20 | 2014-04-16 | 伊利诺伊大学评议会 | 用于制造可转移半导体结构、器件和器件构件的松脱策略 |
CN105826345B (zh) | 2007-01-17 | 2018-07-31 | 伊利诺伊大学评议会 | 通过基于印刷的组装制造的光学*** |
JP5743553B2 (ja) | 2008-03-05 | 2015-07-01 | ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ | 伸張可能及び折畳み可能な電子デバイス |
US8470701B2 (en) | 2008-04-03 | 2013-06-25 | Advanced Diamond Technologies, Inc. | Printable, flexible and stretchable diamond for thermal management |
US7927976B2 (en) | 2008-07-23 | 2011-04-19 | Semprius, Inc. | Reinforced composite stamp for dry transfer printing of semiconductor elements |
WO2010036807A1 (en) | 2008-09-24 | 2010-04-01 | The Board Of Trustees Of The University Of Illinois | Arrays of ultrathin silicon solar microcells |
US8886334B2 (en) | 2008-10-07 | 2014-11-11 | Mc10, Inc. | Systems, methods, and devices using stretchable or flexible electronics for medical applications |
US8097926B2 (en) | 2008-10-07 | 2012-01-17 | Mc10, Inc. | Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy |
US8372726B2 (en) | 2008-10-07 | 2013-02-12 | Mc10, Inc. | Methods and applications of non-planar imaging arrays |
EP2349440B1 (en) | 2008-10-07 | 2019-08-21 | Mc10, Inc. | Catheter balloon having stretchable integrated circuitry and sensor array |
US9119533B2 (en) | 2008-10-07 | 2015-09-01 | Mc10, Inc. | Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy |
US8389862B2 (en) | 2008-10-07 | 2013-03-05 | Mc10, Inc. | Extremely stretchable electronics |
US9123614B2 (en) | 2008-10-07 | 2015-09-01 | Mc10, Inc. | Methods and applications of non-planar imaging arrays |
US9545285B2 (en) | 2011-10-05 | 2017-01-17 | Mc10, Inc. | Cardiac catheter employing conformal electronics for mapping |
KR101041139B1 (ko) * | 2008-11-04 | 2011-06-13 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 그를 포함하는 유기전계발광표시장치 |
WO2010056857A2 (en) * | 2008-11-12 | 2010-05-20 | Mc10, Inc. | Extremely stretchable electronics |
KR101736722B1 (ko) | 2008-11-19 | 2017-05-17 | 셈프리어스 아이엔씨. | 전단-보조 탄성 스탬프 전사에 의한 프린팅 반도체 소자 |
EP2386117A4 (en) * | 2009-01-12 | 2017-12-27 | Mc10, Inc. | Methods and applications of non-planar imaging arrays |
WO2010086034A1 (en) | 2009-01-30 | 2010-08-05 | Interuniversitair Microelektronica Centrum Vzw | Stretchable electronic device |
EP2430652B1 (en) | 2009-05-12 | 2019-11-20 | The Board of Trustees of the University of Illionis | Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays |
FR2947063B1 (fr) | 2009-06-19 | 2011-07-01 | Commissariat Energie Atomique | Retroprojecteur |
US8261660B2 (en) | 2009-07-22 | 2012-09-11 | Semprius, Inc. | Vacuum coupled tool apparatus for dry transfer printing semiconductor elements |
KR101077789B1 (ko) | 2009-08-07 | 2011-10-28 | 한국과학기술원 | Led 디스플레이 제조 방법 및 이에 의하여 제조된 led 디스플레이 |
KR101113692B1 (ko) | 2009-09-17 | 2012-02-27 | 한국과학기술원 | 태양전지 제조방법 및 이에 의하여 제조된 태양전지 |
US9723122B2 (en) | 2009-10-01 | 2017-08-01 | Mc10, Inc. | Protective cases with integrated electronics |
US10918298B2 (en) | 2009-12-16 | 2021-02-16 | The Board Of Trustees Of The University Of Illinois | High-speed, high-resolution electrophysiology in-vivo using conformal electronics |
US10441185B2 (en) | 2009-12-16 | 2019-10-15 | The Board Of Trustees Of The University Of Illinois | Flexible and stretchable electronic systems for epidermal electronics |
US9936574B2 (en) | 2009-12-16 | 2018-04-03 | The Board Of Trustees Of The University Of Illinois | Waterproof stretchable optoelectronics |
KR101405463B1 (ko) | 2010-01-15 | 2014-06-27 | 그래핀스퀘어 주식회사 | 기체 및 수분 차단용 그래핀 보호막, 이의 형성 방법 및 그의 용도 |
US8450779B2 (en) * | 2010-03-08 | 2013-05-28 | International Business Machines Corporation | Graphene based three-dimensional integrated circuit device |
WO2011112931A1 (en) | 2010-03-12 | 2011-09-15 | The Board Of Trustees Of The University Of Illinois | Waterproof stretchable optoelectronics |
EP2974673B1 (en) | 2010-03-17 | 2017-03-22 | The Board of Trustees of the University of Illionis | Implantable biomedical devices on bioresorbable substrates |
JP2013533754A (ja) * | 2010-04-12 | 2013-08-29 | タフツ・ユニバーシティ | 絹電子部品 |
CA2813000C (en) * | 2010-09-27 | 2018-09-04 | Techtonic Pty Ltd | Undulatory structures |
CN102001622B (zh) * | 2010-11-08 | 2013-03-20 | 中国科学技术大学 | 空气桥式纳米器件的制备方法 |
US9442285B2 (en) | 2011-01-14 | 2016-09-13 | The Board Of Trustees Of The University Of Illinois | Optical component array having adjustable curvature |
EP2681538B1 (en) | 2011-03-11 | 2019-03-06 | Mc10, Inc. | Integrated devices to facilitate quantitative assays and diagnostics |
TWI455341B (zh) * | 2011-03-21 | 2014-10-01 | Motech Ind Inc | Method for manufacturing solar cells |
US10189587B2 (en) * | 2011-04-18 | 2019-01-29 | Adidas Ag | Process and apparatus for continuously encapsulating elongated components and encapsulated elongated components obtained |
WO2012158709A1 (en) | 2011-05-16 | 2012-11-22 | The Board Of Trustees Of The University Of Illinois | Thermally managed led arrays assembled by printing |
US9159635B2 (en) | 2011-05-27 | 2015-10-13 | Mc10, Inc. | Flexible electronic structure |
EP2713863B1 (en) | 2011-06-03 | 2020-01-15 | The Board of Trustees of the University of Illionis | Conformable actively multiplexed high-density surface electrode array for brain interfacing |
CN102244015B (zh) * | 2011-06-17 | 2012-12-19 | 华中科技大学 | 一种在预拉伸的弹性基板上进行柔性电子图案化的方法 |
WO2013022853A1 (en) | 2011-08-05 | 2013-02-14 | Mc10, Inc. | Catheter balloon methods and apparatus employing sensing elements |
US9757050B2 (en) | 2011-08-05 | 2017-09-12 | Mc10, Inc. | Catheter balloon employing force sensing elements |
EP3470830A1 (en) | 2011-09-01 | 2019-04-17 | MC10 Inc. | Electronics for detection of a condition of tissue |
US9691873B2 (en) | 2011-12-01 | 2017-06-27 | The Board Of Trustees Of The University Of Illinois | Transient devices designed to undergo programmable transformations |
FR2985371A1 (fr) | 2011-12-29 | 2013-07-05 | Commissariat Energie Atomique | Procede de fabrication d'une structure multicouche sur un support |
US8492208B1 (en) | 2012-01-05 | 2013-07-23 | International Business Machines Corporation | Compressive (PFET) and tensile (NFET) channel strain in nanowire FETs fabricated with a replacement gate process |
CN102610534A (zh) * | 2012-01-13 | 2012-07-25 | 华中科技大学 | 一种可伸缩rfid电子标签及其制造方法 |
CN104205365B (zh) | 2012-03-19 | 2020-06-16 | 亮锐控股有限公司 | 磷光体施加前后发光器件的单个化 |
CN102610672A (zh) * | 2012-03-23 | 2012-07-25 | 合肥工业大学 | 一种异质结型光电探测器及其制备方法 |
US9554484B2 (en) | 2012-03-30 | 2017-01-24 | The Board Of Trustees Of The University Of Illinois | Appendage mountable electronic devices conformable to surfaces |
US9247637B2 (en) | 2012-06-11 | 2016-01-26 | Mc10, Inc. | Strain relief structures for stretchable interconnects |
US9226402B2 (en) | 2012-06-11 | 2015-12-29 | Mc10, Inc. | Strain isolation structures for stretchable electronics |
KR20150031324A (ko) | 2012-07-05 | 2015-03-23 | 엠씨10, 인크 | 유동 감지를 포함하는 카테터 장치 |
US9295842B2 (en) | 2012-07-05 | 2016-03-29 | Mc10, Inc. | Catheter or guidewire device including flow sensing and use thereof |
CN102903841B (zh) * | 2012-09-18 | 2015-09-09 | 中国科学院宁波材料技术与工程研究所 | 一种温度控制的磁电子器件、其制备方法及应用 |
JP2016500869A (ja) | 2012-10-09 | 2016-01-14 | エムシー10 インコーポレイテッドMc10,Inc. | 衣類と一体化されたコンフォーマル電子回路 |
US9171794B2 (en) | 2012-10-09 | 2015-10-27 | Mc10, Inc. | Embedding thin chips in polymer |
CN102983791A (zh) * | 2012-10-26 | 2013-03-20 | 苏州大学 | 温差交流发电装置及其发电方法 |
KR102495290B1 (ko) | 2012-12-28 | 2023-02-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR102051519B1 (ko) | 2013-02-25 | 2019-12-03 | 삼성전자주식회사 | 파이버 상에 형성된 박막 트랜지스터 및 그 제조 방법 |
AU2014250839B2 (en) | 2013-04-12 | 2018-05-10 | The Board Of Trustees Of The University Of Illinois | Inorganic and organic transient electronic devices |
US9706647B2 (en) * | 2013-05-14 | 2017-07-11 | Mc10, Inc. | Conformal electronics including nested serpentine interconnects |
US9372123B2 (en) | 2013-08-05 | 2016-06-21 | Mc10, Inc. | Flexible temperature sensor including conformable electronics |
CN105705093A (zh) | 2013-10-07 | 2016-06-22 | Mc10股份有限公司 | 用于感测和分析的适形传感器*** |
CN103560157B (zh) * | 2013-11-19 | 2016-02-24 | 中国科学院上海微***与信息技术研究所 | 应变结构及其制作方法 |
KR102365120B1 (ko) | 2013-11-22 | 2022-02-18 | 메디데이타 솔루션즈, 인코포레이티드 | 심장 활동 감지 및 분석용 등각 센서 시스템 |
JP6549150B2 (ja) | 2014-01-06 | 2019-07-24 | エムシー10 インコーポレイテッドMc10,Inc. | コンフォーマル電子デバイスの封入方法 |
CN106063392B (zh) | 2014-03-04 | 2020-06-02 | Mc10股份有限公司 | 电子器件的多部分柔性包封壳体 |
CN106062544B (zh) | 2014-03-12 | 2020-07-07 | Mc10股份有限公司 | 对测定变化的量化 |
CN103869607A (zh) * | 2014-03-18 | 2014-06-18 | 无锡中微掩模电子有限公司 | 二元掩模铬金属膜去除方法 |
WO2015168273A1 (en) * | 2014-05-02 | 2015-11-05 | Synopsys, Inc. | 3d tcad simulation |
US10207916B2 (en) | 2014-05-28 | 2019-02-19 | 3M Innovative Properties Company | MEMS devices on flexible substrate |
CN105431292B (zh) * | 2014-07-11 | 2018-06-08 | 英特尔公司 | 可弯曲并且可拉伸的电子器件和方法 |
MY182253A (en) * | 2014-07-20 | 2021-01-18 | X Celeprint Ltd | Apparatus and methods for micro-transfer-printing |
KR102161644B1 (ko) | 2014-08-20 | 2020-10-06 | 삼성디스플레이 주식회사 | 스트레쳐블 표시 패널 및 이를 포함하는 표시 장치 |
CN104153128B (zh) * | 2014-08-26 | 2017-03-08 | 青岛大学 | 一种基于有序排列扭曲结构柔性可拉伸器件的制备方法 |
US9899330B2 (en) | 2014-10-03 | 2018-02-20 | Mc10, Inc. | Flexible electronic circuits with embedded integrated circuit die |
US10297572B2 (en) | 2014-10-06 | 2019-05-21 | Mc10, Inc. | Discrete flexible interconnects for modules of integrated circuits |
USD781270S1 (en) | 2014-10-15 | 2017-03-14 | Mc10, Inc. | Electronic device having antenna |
US9398705B2 (en) * | 2014-12-02 | 2016-07-19 | Flextronics Ap, Llc. | Stretchable printed electronic sheets to electrically connect uneven two dimensional and three dimensional surfaces |
US9991326B2 (en) | 2015-01-14 | 2018-06-05 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device comprising flexible substrate and light-emitting element |
KR102356697B1 (ko) * | 2015-01-15 | 2022-01-27 | 삼성디스플레이 주식회사 | 신축성 표시 장치 및 그의 제조 방법 |
KR102456698B1 (ko) | 2015-01-15 | 2022-10-19 | 삼성디스플레이 주식회사 | 신축성 표시 장치 |
KR102320382B1 (ko) | 2015-01-28 | 2021-11-02 | 삼성디스플레이 주식회사 | 전자 장치 |
US10477354B2 (en) | 2015-02-20 | 2019-11-12 | Mc10, Inc. | Automated detection and configuration of wearable devices based on on-body status, location, and/or orientation |
WO2016140961A1 (en) | 2015-03-02 | 2016-09-09 | Mc10, Inc. | Perspiration sensor |
KR102335807B1 (ko) * | 2015-03-10 | 2021-12-08 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102385327B1 (ko) * | 2015-04-06 | 2022-04-12 | 삼성디스플레이 주식회사 | 플렉서블 표시 장치 및 이의 제조 방법 |
US10677647B2 (en) | 2015-06-01 | 2020-06-09 | The Board Of Trustees Of The University Of Illinois | Miniaturized electronic systems with wireless power and near-field communication capabilities |
EP3304130B1 (en) | 2015-06-01 | 2021-10-06 | The Board of Trustees of the University of Illinois | Alternative approach to uv sensing |
US10026721B2 (en) | 2015-06-30 | 2018-07-17 | Apple Inc. | Electronic devices with soft input-output components |
US9841548B2 (en) | 2015-06-30 | 2017-12-12 | Apple Inc. | Electronic devices with soft input-output components |
CN105049033B (zh) * | 2015-07-01 | 2017-11-24 | 东南大学 | 基于砷化镓基低漏电流双悬臂梁开关的或非门 |
US10653332B2 (en) | 2015-07-17 | 2020-05-19 | Mc10, Inc. | Conductive stiffener, method of making a conductive stiffener, and conductive adhesive and encapsulation layers |
WO2017031129A1 (en) | 2015-08-19 | 2017-02-23 | Mc10, Inc. | Wearable heat flux devices and methods of use |
WO2017059215A1 (en) | 2015-10-01 | 2017-04-06 | Mc10, Inc. | Method and system for interacting with a virtual environment |
US10532211B2 (en) | 2015-10-05 | 2020-01-14 | Mc10, Inc. | Method and system for neuromodulation and stimulation |
DE102015014256B4 (de) | 2015-11-05 | 2020-06-18 | Airbus Defence and Space GmbH | Mikroelektronisches Modul zur Reinigung einer Oberfläche, Modularray und Verfahren zur Reinigung einer Oberfläche |
US10925543B2 (en) | 2015-11-11 | 2021-02-23 | The Board Of Trustees Of The University Of Illinois | Bioresorbable silicon electronics for transient implants |
WO2017085849A1 (ja) * | 2015-11-19 | 2017-05-26 | 三井金属鉱業株式会社 | 誘電体層を有するプリント配線板の製造方法 |
CN105405983B (zh) * | 2015-12-14 | 2017-05-10 | 吉林大学 | 具有周期性规则褶皱结构的可拉伸有机电致发光器件 |
CN106920800B (zh) * | 2015-12-25 | 2019-07-23 | 昆山工研院新型平板显示技术中心有限公司 | 柔性显示器件及其形成方法 |
EP3420733A4 (en) | 2016-02-22 | 2019-06-26 | Mc10, Inc. | SYSTEM, DEVICE AND METHOD FOR ACQUIRING ON THE BODY OF SENSOR AND CONCENTRATOR NODE COUPLED WITH SENSOR INFORMATION |
US10277386B2 (en) | 2016-02-22 | 2019-04-30 | Mc10, Inc. | System, devices, and method for on-body data and power transmission |
KR102455039B1 (ko) * | 2016-03-18 | 2022-10-17 | 삼성디스플레이 주식회사 | 신축성 디스플레이 장치 |
WO2017184705A1 (en) | 2016-04-19 | 2017-10-26 | Mc10, Inc. | Method and system for measuring perspiration |
ITUA20162943A1 (it) * | 2016-04-27 | 2017-10-27 | Pilegrowth Tech S R L | Metodo per la fabbricazione industriale di una struttura a semiconduttore a ridotto incurvamento. |
US10209602B2 (en) * | 2016-05-31 | 2019-02-19 | E Ink Corporation | Stretchable electro-optic displays |
US10002222B2 (en) * | 2016-07-14 | 2018-06-19 | Arm Limited | System and method for perforating redundant metal in self-aligned multiple patterning |
US10447347B2 (en) | 2016-08-12 | 2019-10-15 | Mc10, Inc. | Wireless charger and high speed data off-loader |
CN106229038B (zh) * | 2016-09-07 | 2017-10-24 | 东华大学 | 一种基于多级结构石墨烯的可拉伸透明导电弹性体的制备方法 |
JP2018060932A (ja) * | 2016-10-06 | 2018-04-12 | ローム株式会社 | Ledパッケージ |
CA3040514A1 (en) | 2016-10-20 | 2018-04-26 | Quantum Diamond Technologies Inc. | Methods and apparatus for magnetic particle analysis using wide-field diamond magnetic imaging |
JP2018078272A (ja) * | 2016-10-31 | 2018-05-17 | スリーエム イノベイティブ プロパティズ カンパニー | 三次元形状熱伝導性成形体、及びその製造方法 |
CN106601933B (zh) * | 2016-12-12 | 2018-02-23 | 吉林大学 | 一种具有规则褶皱结构的可拉伸电子器件的制备方法 |
EP3559668B1 (en) | 2016-12-23 | 2023-07-19 | Quantum Diamond Technologies Inc. | Methods and apparatus for magnetic multi-bead assays |
DE102017100053A1 (de) | 2017-01-03 | 2018-07-05 | Infineon Technologies Ag | Rahmenmontage nach Folienexpansion |
WO2018153421A2 (en) * | 2017-02-24 | 2018-08-30 | Flexucell Aps | Light emitting transducer |
JP2018179501A (ja) * | 2017-04-03 | 2018-11-15 | 日本精工株式会社 | 近接覚センサ |
EP3593423A4 (en) * | 2017-04-12 | 2021-01-20 | Sense Photonics, Inc. | BEAM FORMING FOR ULTRA-SMALL VERTICAL RESONATOR SURFACE-EMITTING LASER (VCSEL) ARRAYS |
US20180323239A1 (en) * | 2017-05-03 | 2018-11-08 | Innolux Corporation | Display device |
CN107248518B (zh) | 2017-05-26 | 2020-04-17 | 京东方科技集团股份有限公司 | 光电传感器及其制作方法、显示装置 |
EP3639281A4 (en) * | 2017-06-12 | 2021-04-21 | 3M Innovative Properties Company | EXPANDABLE CONDUCTORS |
EP3652786B1 (en) | 2017-07-14 | 2022-08-03 | King Abdullah University Of Science And Technology | Flexible and stretchable imager, method of making a flexible and stretchable imager |
ES2932362T3 (es) | 2017-07-31 | 2023-01-18 | Quantum Diamond Tech Inc | Sistema sensor que comprende un cartucho de muestras que incluye una membrana flexible para soportar una muestra |
CN107634054A (zh) * | 2017-09-18 | 2018-01-26 | 天津大学 | 柔性衬底上硅纳米膜转数字逻辑反相器及其制作方法 |
US10205303B1 (en) * | 2017-10-18 | 2019-02-12 | Lumentum Operations Llc | Vertical-cavity surface-emitting laser thin wafer bowing control |
EP3709775A4 (en) * | 2017-11-07 | 2021-08-04 | Dai Nippon Printing Co., Ltd. | EXTENSIBLE CIRCUIT SUBSTRATE AND ARTICLE |
CN108009317A (zh) * | 2017-11-09 | 2018-05-08 | 武汉大学 | 一种复合材料的热导率研究仿真和建模方法 |
WO2019096828A1 (en) | 2017-11-15 | 2019-05-23 | Smith & Nephew Plc | Integrated sensor enabled wound monitoring and/or therapy dressings and systems |
CN109859623B (zh) * | 2017-11-30 | 2021-05-18 | 云谷(固安)科技有限公司 | 阵列基板及其制备方法及显示屏 |
KR101974575B1 (ko) * | 2017-12-01 | 2019-05-02 | 포항공과대학교 산학협력단 | 싱크로트론 엑스선을 이용한 초소형 다중 경사 구조체 제조 방법 |
CN108417592A (zh) * | 2018-02-12 | 2018-08-17 | 中国科学院半导体研究所 | 红外成像器件及其制备方法、仿生红外球面相机 |
KR102077306B1 (ko) * | 2018-02-14 | 2020-02-13 | 광운대학교 산학협력단 | 실시간 당 모니터링 센서 시스템 및 저온 용액 공정에 기반한 당센서의 제조 방법 |
CN109346504B (zh) * | 2018-09-30 | 2021-06-29 | 云谷(固安)科技有限公司 | 柔性显示面板及显示装置 |
CN109437091A (zh) * | 2018-10-23 | 2019-03-08 | 中山大学 | 一种在弹性衬底上制备微纳结构的方法 |
CN111148364B (zh) * | 2018-11-05 | 2021-01-26 | 北京梦之墨科技有限公司 | 一种柔性可拉伸电路及其制作方法 |
CN111556820A (zh) * | 2018-12-10 | 2020-08-18 | 康宁公司 | 可动态弯折的汽车内部显示*** |
CN109671869B (zh) * | 2018-12-12 | 2020-06-16 | 武汉华星光电半导体显示技术有限公司 | 复合膜层的制作方法及显示器件 |
CN109637366B (zh) * | 2018-12-28 | 2020-10-09 | 厦门天马微电子有限公司 | 治具和显示模组的弯折方法 |
CN111724676B (zh) * | 2019-03-21 | 2022-09-02 | 昆山工研院新型平板显示技术中心有限公司 | 可拉伸导线及其制作方法和显示装置 |
CN110393507B (zh) * | 2019-08-01 | 2020-12-25 | 清华大学 | 柔性可延展电子器件的结构设计及其制造方法 |
CN110797148B (zh) * | 2019-10-08 | 2021-07-30 | 上海交通大学 | 适用于无绝缘线圈的超导带材、无绝缘线圈及其制备方法 |
CN110683508B (zh) * | 2019-10-18 | 2023-05-23 | 北京元芯碳基集成电路研究院 | 一种碳纳米管平行阵列的制备方法 |
CN110808295B (zh) * | 2019-11-11 | 2021-04-23 | 重庆中易智芯科技有限责任公司 | 一种三维电致伸缩收集电极的半导体探测器及其制备方法 |
CN110697646A (zh) * | 2019-11-22 | 2020-01-17 | 上海幂方电子科技有限公司 | 一种电子皮肤及其制备方法 |
US11062936B1 (en) | 2019-12-19 | 2021-07-13 | X Display Company Technology Limited | Transfer stamps with multiple separate pedestals |
CN111063658B (zh) * | 2019-12-30 | 2020-09-29 | 清华大学 | 柔性可延展的电子器件的制造方法 |
US20230119125A1 (en) * | 2020-02-12 | 2023-04-20 | Rayleigh Solar Tech Inc. | High performance perovskite solar cells, module design, and manufacturing processes therefor |
GB2593864B (en) * | 2020-02-28 | 2023-01-04 | X Fab France Sas | Improved transfer printing for RF applications |
CN112967971B (zh) * | 2020-05-27 | 2023-04-18 | 重庆康佳光电技术研究院有限公司 | 一种Micro-LED的转移基板及其制备方法 |
KR102393781B1 (ko) * | 2020-07-07 | 2022-05-04 | 서울대학교산학협력단 | 유연 소자 |
CN112133198B (zh) * | 2020-09-29 | 2022-04-22 | 厦门天马微电子有限公司 | 可拉伸显示面板及可拉伸显示装置 |
CN112606585B (zh) * | 2020-12-02 | 2022-05-31 | 潍坊歌尔微电子有限公司 | 器件转印处理方法及微型麦克风防尘装置转印处理方法 |
KR102591096B1 (ko) * | 2020-12-15 | 2023-10-18 | 연세대학교 산학협력단 | 인장 변형을 이용한 광 검출기 제조 방법, 이에 의해 제조되는 광 검출기, 및 그 제조 장치 |
KR102553142B1 (ko) * | 2021-06-25 | 2023-07-06 | 경희대학교 산학협력단 | 감도 향상 구조를 갖는 전도성 고분자 복합재 기반 압저항 압력센서 및 그 제조방법 |
KR102582188B1 (ko) * | 2021-07-22 | 2023-09-26 | 한국과학기술원 | 레이저 커팅된 플라스틱 기판을 활용한 신축 유기 발광 다이오드 및 그 제작 방법 |
CN113542755B (zh) * | 2021-07-27 | 2022-06-21 | 展讯通信(上海)有限公司 | 二维楔形遮罩的产生方法及*** |
WO2023023976A1 (zh) * | 2021-08-25 | 2023-03-02 | 京东方科技集团股份有限公司 | 射频微电子机械开关、射频装置 |
CN114286513B (zh) * | 2021-11-30 | 2024-02-06 | 通元科技(惠州)有限公司 | 一种非对称预应力消除型led背板及其制作方法 |
CN114355489B (zh) * | 2022-01-13 | 2023-05-16 | 西华大学 | 一种基于dmd数字光刻的曲面复眼透镜及其制备方法 |
KR20230112256A (ko) | 2022-01-20 | 2023-07-27 | 공주대학교 산학협력단 | 물결 모양 배선 및 이의 제조방법 |
WO2023137539A1 (en) * | 2022-01-21 | 2023-07-27 | Decorby Raymond | Monolithic optical pressure sensors and transducers |
WO2023187834A1 (en) * | 2022-03-30 | 2023-10-05 | Council Of Scientific And Industrial Research | Method for fabricating silicon chip carriers using wet bulk micromachining for ir detector applications |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005122285A2 (en) * | 2004-06-04 | 2005-12-22 | The Board Of Trustees Of The University Of Illinois | Methods and devices for fabricating and assembling printable semiconductor elements |
US20060169989A1 (en) * | 2003-03-28 | 2006-08-03 | Rabin Bhattacharya | Deformable organic devices |
US20060286785A1 (en) * | 2004-06-04 | 2006-12-21 | The Board Of Trustees Of The University Of Illinois | A Stretchable Form of Single Crystal Silicon for High Performance Electronics on Rubber Substrates |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5763864A (en) * | 1980-09-29 | 1982-04-17 | Messerschmitt Boelkow Blohm | Solar battery mechanism |
US4766670A (en) * | 1987-02-02 | 1988-08-30 | International Business Machines Corporation | Full panel electronic packaging structure and method of making same |
US5086785A (en) * | 1989-08-10 | 1992-02-11 | Abrams/Gentille Entertainment Inc. | Angular displacement sensors |
US5475514A (en) | 1990-12-31 | 1995-12-12 | Kopin Corporation | Transferred single crystal arrayed devices including a light shield for projection displays |
US5375397B1 (en) * | 1993-06-22 | 1998-11-10 | Robert J Ferrand | Curve-conforming sensor array pad and method of measuring saddle pressures on a horse |
JPH08298334A (ja) * | 1995-04-26 | 1996-11-12 | Mitsubishi Electric Corp | 太陽電池板 |
US6784023B2 (en) * | 1996-05-20 | 2004-08-31 | Micron Technology, Inc. | Method of fabrication of stacked semiconductor devices |
DE19637626A1 (de) * | 1996-09-16 | 1998-03-26 | Bosch Gmbh Robert | Flexible Leiterbahnverbindung |
FR2786037B1 (fr) * | 1998-11-16 | 2001-01-26 | Alstom Technology | Barre de conduction electrique de type blinde pour poste electrique haute tension |
US6150602A (en) * | 1999-05-25 | 2000-11-21 | Hughes Electronics Corporation | Large area solar cell extended life interconnect |
US6413790B1 (en) * | 1999-07-21 | 2002-07-02 | E Ink Corporation | Preferred methods for producing electrical circuit elements used to control an electronic display |
JP2001352089A (ja) * | 2000-06-08 | 2001-12-21 | Showa Shell Sekiyu Kk | 熱膨張歪み防止型太陽電池モジュール |
US6743982B2 (en) * | 2000-11-29 | 2004-06-01 | Xerox Corporation | Stretchable interconnects using stress gradient films |
GB0029312D0 (en) * | 2000-12-01 | 2001-01-17 | Philips Corp Intellectual Pty | Flexible electronic device |
JP2004519719A (ja) * | 2001-03-06 | 2004-07-02 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 表示装置 |
US7273987B2 (en) * | 2002-03-21 | 2007-09-25 | General Electric Company | Flexible interconnect structures for electrical devices and light sources incorporating the same |
JP3980918B2 (ja) * | 2002-03-28 | 2007-09-26 | 株式会社東芝 | アクティブマトリクス基板及びその製造方法、表示装置 |
JP2003323741A (ja) | 2002-04-30 | 2003-11-14 | National Institute Of Advanced Industrial & Technology | 光学的メモリ |
US20050227389A1 (en) * | 2004-04-13 | 2005-10-13 | Rabin Bhattacharya | Deformable organic devices |
US7491892B2 (en) * | 2003-03-28 | 2009-02-17 | Princeton University | Stretchable and elastic interconnects |
GB0323285D0 (en) * | 2003-10-04 | 2003-11-05 | Koninkl Philips Electronics Nv | Device and method of making a device having a patterned layer on a flexible substrate |
WO2005098969A1 (ja) * | 2004-04-08 | 2005-10-20 | Sharp Kabushiki Kaisha | 太陽電池及び太陽電池モジュール |
US7629691B2 (en) * | 2004-06-16 | 2009-12-08 | Honeywell International Inc. | Conductor geometry for electronic circuits fabricated on flexible substrates |
FR2875339B1 (fr) * | 2004-09-16 | 2006-12-08 | St Microelectronics Sa | Transistor mos a grille deformable |
US20060132025A1 (en) * | 2004-12-22 | 2006-06-22 | Eastman Kodak Company | Flexible display designed for minimal mechanical strain |
US20060160943A1 (en) * | 2005-01-18 | 2006-07-20 | Weir James P | Water-based flock adhesives for thermoplastic substrates |
CN2779218Y (zh) * | 2005-02-01 | 2006-05-10 | 广德利德照明有限公司 | 一种管状led装饰灯的连接导线 |
TWI427802B (zh) * | 2005-06-02 | 2014-02-21 | Univ Illinois | 可印刷半導體結構及製造和組合之相關方法 |
JP7099160B2 (ja) | 2018-08-10 | 2022-07-12 | 住友電気工業株式会社 | 光ファイバの製造方法 |
US11394720B2 (en) | 2019-12-30 | 2022-07-19 | Itron, Inc. | Time synchronization using trust aggregation |
-
2007
- 2007-09-06 TW TW103117812A patent/TWI587527B/zh active
- 2007-09-06 MY MYPI20090622 patent/MY149475A/en unknown
- 2007-09-06 CN CN2007800411276A patent/CN101681695B/zh active Active
- 2007-09-06 KR KR20097007081A patent/KR101453419B1/ko active IP Right Grant
- 2007-09-06 JP JP2009527564A patent/JP5578509B2/ja active Active
- 2007-09-06 KR KR1020177037238A patent/KR102087337B1/ko active IP Right Grant
- 2007-09-06 EP EP07841968A patent/EP2064710A4/en not_active Ceased
- 2007-09-06 KR KR1020167032797A patent/KR101814683B1/ko active IP Right Grant
- 2007-09-06 TW TW096133310A patent/TWI485863B/zh active
- 2007-09-06 KR KR1020147031584A patent/KR101689747B1/ko active IP Right Grant
- 2007-09-06 CN CN201310075846.7A patent/CN103213935B/zh active Active
- 2007-09-06 KR KR1020147006478A patent/KR101612749B1/ko active IP Right Grant
- 2007-09-06 TW TW106107273A patent/TWI654770B/zh active
- 2007-09-06 WO PCT/US2007/077759 patent/WO2008030960A2/en active Application Filing
- 2007-09-06 MY MYPI2012005126A patent/MY172115A/en unknown
-
2013
- 2013-06-21 JP JP2013131022A patent/JP5735585B2/ja active Active
-
2015
- 2015-04-16 JP JP2015084234A patent/JP2015216365A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060169989A1 (en) * | 2003-03-28 | 2006-08-03 | Rabin Bhattacharya | Deformable organic devices |
WO2005122285A2 (en) * | 2004-06-04 | 2005-12-22 | The Board Of Trustees Of The University Of Illinois | Methods and devices for fabricating and assembling printable semiconductor elements |
US20060286785A1 (en) * | 2004-06-04 | 2006-12-21 | The Board Of Trustees Of The University Of Illinois | A Stretchable Form of Single Crystal Silicon for High Performance Electronics on Rubber Substrates |
Non-Patent Citations (6)
Title |
---|
JONES J ET AL: "Stretchable Interconnects for Elastic Electronic Surfaces", PROCEEDINGS OF THE IEEE, IEEE. NEW YORK, US, vol. 93, no. 8, 1 August 2005 (2005-08-01), pages 1459 - 1467, XP011136590, ISSN: 0018-9219, DOI: 10.1109/JPROC.2005.851502 * |
JONES JOYELLE ET AL: "Stretchable wavy metal interconnects", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART A, AVS /AIP, MELVILLE, NY., US, vol. 22, no. 4, 1 July 2004 (2004-07-01), pages 1723 - 1725, XP012073801, ISSN: 0734-2101, DOI: 10.1116/1.1756879 * |
See also references of WO2008030960A2 * |
Y. SUN ET AL: "Buckled and Wavy Ribbons of GaAs for High-Performance Electronics on Elastomeric Substrates", ADVANCED MATERIALS, vol. 18, no. 21, 3 November 2006 (2006-11-03), DE, pages 2857 - 2862, XP055351598, ISSN: 0935-9648, DOI: 10.1002/adma.200600646 * |
YUGANG SUN ET AL: "Controlled buckling of semiconductor nanoribbons for stretchable electronics", NATURE NANOTECHNOLOGY, vol. 1, no. 3, 1 December 2006 (2006-12-01), pages 201 - 207, XP055165050, ISSN: 1748-3387, DOI: 10.1038/nnano.2006.131 * |
YUGANG SUN ET AL: "Printed Arrays of Aligned GaAs Wires for Flexible Transistors, Diodes, and Circuits on Plastic Substrates", SMALL, vol. 2, no. 11, 7 August 2006 (2006-08-07), pages 1330 - 1334, XP055165207, ISSN: 1613-6810, DOI: 10.1002/smll.200500528 * |
Also Published As
Publication number | Publication date |
---|---|
TW201735380A (zh) | 2017-10-01 |
KR101612749B1 (ko) | 2016-04-27 |
KR20150003308A (ko) | 2015-01-08 |
KR20180002083A (ko) | 2018-01-05 |
KR101814683B1 (ko) | 2018-01-05 |
JP2010503238A (ja) | 2010-01-28 |
MY172115A (en) | 2019-11-14 |
TWI654770B (zh) | 2019-03-21 |
EP2064710A2 (en) | 2009-06-03 |
KR101689747B1 (ko) | 2016-12-27 |
KR102087337B1 (ko) | 2020-03-11 |
KR101453419B1 (ko) | 2014-10-23 |
KR20140043244A (ko) | 2014-04-08 |
TWI485863B (zh) | 2015-05-21 |
WO2008030960A2 (en) | 2008-03-13 |
KR20090086199A (ko) | 2009-08-11 |
JP2013239716A (ja) | 2013-11-28 |
CN103213935A (zh) | 2013-07-24 |
CN101681695B (zh) | 2013-04-10 |
KR20160140962A (ko) | 2016-12-07 |
JP2015216365A (ja) | 2015-12-03 |
TW201434163A (zh) | 2014-09-01 |
CN103213935B (zh) | 2017-03-01 |
TWI587527B (zh) | 2017-06-11 |
MY149475A (en) | 2013-08-30 |
JP5735585B2 (ja) | 2015-06-17 |
WO2008030960A3 (en) | 2008-07-24 |
TW200836353A (en) | 2008-09-01 |
CN101681695A (zh) | 2010-03-24 |
JP5578509B2 (ja) | 2014-08-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2064710A4 (en) | DEFORMATION-CONTROLLED STRUCTURES IN SEMICONDUCTOR INTERCONNECTS AND NANOMEMBRANES FOR STABLE ELECTRONIC DEVICES | |
TWI346367B (en) | Stacked integrated circuit and semiconductor component | |
EP2248159A4 (en) | SEMICONDUCTOR COMPONENT STRUCTURES AND SAME PROCESSES | |
TWI320570B (en) | Memory devices and integrated circuits | |
HK1159848A1 (en) | Stretchable and foldable electronic devices | |
EP2180772A4 (en) | MULTI-LAYER CONNECTION CHART AND SEMICONDUCTOR DEVICE | |
TWI341005B (en) | Semiconductor die and package structure | |
HK1123135A1 (en) | Adjustable integrated circuit antenna structure | |
EP2031510A4 (en) | INTEGRATED SEMICONDUCTOR SWITCHING | |
TWI340469B (en) | Semiconductor devices and fabrication methods thereof | |
EP2192613A4 (en) | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | |
EP2188811A4 (en) | NOISE REDUCTION IN SEMICONDUCTOR DEVICES | |
TWI371591B (en) | Semiconductor device and semiconductor device module | |
TWI341562B (en) | Integrated circuit devices and fabrication methods thereof | |
TWI340470B (en) | Semiconductor structure | |
EP2235827A4 (en) | ADVANCED DRIVER CAPABILITY IN INTEGRATED CIRCUITS ON CIRCUITS WITH PROGRAMMABLE VOLTAGE OUTPUT | |
EP1969634A4 (en) | VERTICAL DMOS ARRANGEMENT IN AN INTEGRATED CIRCUIT | |
HK1128992A1 (en) | Rod-type semiconductor device | |
TWI366971B (en) | Semiconductor integrated circuit | |
EP2034519A4 (en) | SEMICONDUCTOR DEVICE SEALED WITH THE RESIN AND ELECTRONIC DEVICE USING THE SAME | |
EP2040378A4 (en) | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE | |
EP1894233A4 (en) | PREVENTING DELAMINATION OF COPPER IN A SEMICONDUCTOR DEVICE | |
TWI373136B (en) | Multiple-transistor semiconductor structure | |
TWI341084B (en) | Semiconductor integrated circuit | |
EP2178115A4 (en) | INTEGRATED SEMICONDUCTOR SWITCHING |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20090408 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR |
|
AX | Request for extension of the european patent |
Extension state: AL BA HR MK RS |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: CARLSON, ANDREW Inventor name: ROGERS, JOHN A. Inventor name: SUN, YUGANG Inventor name: HUANG, YONGGANG Inventor name: KIM, HOON-SIK Inventor name: MENARD, ETIENNE Inventor name: LEE, KEON JAE Inventor name: NUZZO, RALPH G. Inventor name: STOYKOVICH, MARK Inventor name: AHN, JONG-HYUN Inventor name: MEITL, MATTHEW Inventor name: KHANG, DAHL-YOUNG Inventor name: JIANG, HANQING Inventor name: ZHU, ZHENGTAO Inventor name: KO, HEUNG CHO Inventor name: KANG, SEONG JUN Inventor name: CHOI, WON MOOK |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: LEE, KEON JAE Inventor name: JIANG, HANQING Inventor name: KO, HEUNG CHO Inventor name: STOYKOVICH, MARK Inventor name: CHOI, WON MOOK Inventor name: NUZZO, RALPH G. Inventor name: KANG, SEONG JUN Inventor name: AHN, JONG-HYUN Inventor name: KHANG, DAHL-YOUNG Inventor name: KIM, HOON-SIK Inventor name: ROGERS, JOHN A. Inventor name: MENARD, ETIENNE Inventor name: MEITL, MATTHEW Inventor name: SUN, YUGANG Inventor name: CARLSON, ANDREW Inventor name: HUANG, YONGGANG Inventor name: ZHU, ZHENGTAO |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: MENARD, ETIENNE Inventor name: ROGERS, JOHN A. Inventor name: ZHU, ZHENGTAO Inventor name: KANG, SEONG JUN Inventor name: STOYKOVICH, MARK Inventor name: LEE, KEON JAE Inventor name: KIM, HOON-SIK Inventor name: SUN, YUGANG Inventor name: MEITL, MATTHEW Inventor name: KO, HEUNG CHO Inventor name: AHN, JONG-HYUN Inventor name: KHANG, DAHL-YOUNG Inventor name: CHOI, WON MOOK Inventor name: HUANG, YONGGANG Inventor name: JIANG, HANQING Inventor name: CARLSON, ANDREW Inventor name: NUZZO, RALPH G. |
|
DAX | Request for extension of the european patent (deleted) | ||
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: KIM, HOON-SIK Inventor name: KHANG, DAHL-YOUNG Inventor name: MEITL, MATTHEW Inventor name: CARLSON, ANDREW Inventor name: ZHU, ZHENGTAO Inventor name: KO, HEUNG CHO Inventor name: STOYKOVICH, MARK Inventor name: AHN, JONG-HYUN Inventor name: LEE, KEON JAE Inventor name: SUN, YUGANG Inventor name: JIANG, HANQING Inventor name: NUZZO, RALPH G. Inventor name: MENARD, ETIENNE Inventor name: HUANG, YONGGANG Inventor name: KANG, SEONG JUN Inventor name: ROGERS, JOHN A. Inventor name: CHOI, WON MOOK |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20110406 |
|
17Q | First examination report despatched |
Effective date: 20120427 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R003 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED |
|
18R | Application refused |
Effective date: 20171016 |