TW200836353A - Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics - Google Patents

Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics Download PDF

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Publication number
TW200836353A
TW200836353A TW96133310A TW96133310A TW200836353A TW 200836353 A TW200836353 A TW 200836353A TW 96133310 A TW96133310 A TW 96133310A TW 96133310 A TW96133310 A TW 96133310A TW 200836353 A TW200836353 A TW 200836353A
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Taiwan
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substrate
interconnect
stamp
curved
strain
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TW96133310A
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Chinese (zh)
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TWI485863B (en
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John A Rogers
Matthew Meitl
yu-gang Sun
Heung-Cho Ko
Andrew Carlson
Mark Stoykovich
Hanqing Jiang
Yonggang Huang
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Univ Illinois
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Publication of TWI485863B publication Critical patent/TWI485863B/en

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Abstract

In an aspect, the present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Description

200836353 九、發明說明： 【先前技術】 自1994年對印刷全聚合物電晶體之首次論證以來，將大 量關注針對於包含處於塑膠基板上之可撓性整合式電子設 備的潛在之新類別的電子系統。[Garnier，F.，Hajla〇ui R· ’ Yassar，Α·及 Srivastava，P·，Science，第 265 卷，第 1684至1686頁]近來，大量研究已針對開發用於用於可撓 性塑膠電子設備之導體、介電質及半導體元件之新的溶液 φ 可處理材料。然而，可撓性電子元件領域之進步不僅係由 新的溶液可處理材料之開發所驅動，而且亦由可應用於可 撓性電子系統之新的設備組件幾何形狀、有效之設備及設 備組件處理方法及高解析度圖案化技術所驅動。預期該等 材料、ΰ又備組恶及製造方法將在快速新興之新類別的可撓 性整合式電子設備、系統及電路中起根本作用。 對可撓性電子元件領域之關注起因於此技術所提供之若 干重要k勢。舉例而言’此等基板材料之固有可挽性允許 ♦將其整合為許多形狀，從而提供對於脆性習知石夕基電子設200836353 IX. INSTRUCTIONS: [Prior Art] Since the first demonstration of printing all-polymer transistors in 1994, there has been a great deal of attention to potential new categories of electronics for flexible integrated electronic devices on plastic substrates. system. [Garnier, F., Hajla〇ui R. 'Yassar, Α· and Srivastava, P., Science, vol. 265, pp. 1684–1686] Recently, a large number of studies have been developed for use in flexible plastic electronics. A new solution φ of the conductor, dielectric and semiconductor components of the device can handle the material. However, advances in the field of flexible electronic components are not only driven by the development of new solution-processable materials, but also by the processing of new device component geometries, effective equipment and equipment components that can be applied to flexible electronic systems. Driven by methods and high-resolution patterning techniques. It is expected that these materials, defects, and manufacturing methods will play a fundamental role in the rapidly emerging new category of flexible integrated electronic devices, systems, and circuits. The focus on the field of flexible electronic components stems from the important k-pots offered by this technology. For example, the inherent levitability of such substrate materials allows for the integration of them into many shapes, thereby providing a basis for brittleness.

該等技術能夠以較低成本於較大基板區上產 生電子設備。These technologies are capable of producing electronic devices on a larger substrate area at a lower cost.

之設計及 成熟方法與多數可撓性材料不相容 。第一，製造習知矽基電子設備之 才料不相容。舉例而言，諸如單晶 124395.doc 200836353 矽或鍺半導體之傳統高品質無機半導體組件通常藉由在大 大超過多數塑膠基板之熔融或分解溫度的溫度（> 攝氏ι〇〇〇 度）下使薄膜生長而加以處理。另外，多數無機半導體本 質上不可溶於將允許基於溶液之處理及輸送之習知溶劑 中。第二，雖然許多非晶矽、有機或混合有機_無機半導 體適於併入可撓性基板中且可以相對較低之溫度加以處 理，但此等材料不具有能夠提供具有良好電子效能之整合 式電子設備的電子特性。舉例而言，具有由此等材料製成 之半導體元件之薄膜電晶體顯示出比基於互補單晶矽之設 備小約三個數量級之場效遷移率。由於此等限制，可撓性 電子設備目前限於不需要高效能之特定應用，諸如用於開 關元件（用於具有非發射性像素之主動式矩陣平板顯示器） 中及用於發光二極體中。 可撓性電子電路為包括可撓性顯示器、具有任意形狀之 電活性表面（諸如電子織物及電子皮膚）的許多領域中之研 九之活躍區。此等電路經常由於傳導組件不能夠回應於構 形改變而延伸而不能夠充分與其環境相一致。因此，彼等 可撓性電路易於受損、電子降級，且在嚴苛及/或重複之 構形改變下可能不可靠。可撓性電路f要在經由延伸及鬆 弛而循環時仍保持完好之可延伸且可撓曲之互連。 能夠撓曲且具有彈性之導體一般藉由在諸如聚矽氧之彈 性體中嵌入金屬粒子而製成。彼等傳導橡膠為具有機械彈 性且導電的。傳導橡膠之缺點包括高電阻率及在延伸時之 顯著電阻變化，由此導致整體較差之互連效能及可靠 124395.doc 200836353The design and maturity methods are incompatible with most flexible materials. First, the manufacturing of conventional electronic equipment is incompatible. For example, conventional high quality inorganic semiconductor components such as single crystal 124395.doc 200836353 germanium or germanium semiconductors are typically fabricated at temperatures (> Celsius) that greatly exceed the melting or decomposition temperatures of most plastic substrates. The film is grown for processing. In addition, most inorganic semiconductors are intrinsically insoluble in conventional solvents that will allow solution based processing and transport. Second, although many amorphous germanium, organic or hybrid organic-inorganic semiconductors are suitable for incorporation into flexible substrates and can be processed at relatively low temperatures, such materials do not have an integrated design that provides good electronic performance. Electronic characteristics of electronic equipment. For example, a thin film transistor having a semiconductor element made of such a material exhibits a field effect mobility about three orders of magnitude smaller than that of a device based on a complementary single crystal germanium. Because of these limitations, flexible electronic devices are currently limited to specific applications that do not require high performance, such as in switching elements (for active matrix flat panel displays with non-emissive pixels) and in light emitting diodes. Flexible electronic circuits are active areas of research in many fields including flexible displays, electroactive surfaces of any shape, such as electronic fabrics and electronic skin. These circuits often do not extend sufficiently to conform to their environment due to the inability of the conductive components to extend in response to structural changes. As such, their flexible circuits are susceptible to damage, electronic degradation, and may be unreliable under severe and/or repeated configuration changes. The flexible circuit f is an extendable and flexible interconnect that remains intact when it is cycled through extension and slack. A flexible and resilient conductor is typically made by embedding metal particles in an elastomer such as polyoxyl. These conductive rubbers are mechanically elastic and electrically conductive. Disadvantages of conductive rubber include high resistivity and significant resistance changes during extension, resulting in poor overall interconnect performance and reliability. 124395.doc 200836353

Uray寻人論述了藉由# ..^ 封閉於能夠進行高達54%之線 性應變同時保持傳導性之綮 ^ W之聚矽礼彈性體中的微製造曲折導 線來建構彈性體電子元件。太 在彼研究中，將導線形成為螺 方疋彈黃形狀。與在較m 厂、 杜竿又低應k(例如’ 2.4%)下斷裂之直線導Uray tracing discusses the construction of elastomeric electronic components by means of #..^ enclosed by microfabricated turns in a 矽 矽 弹性 elastomer that can perform linear strains up to 54% while maintaining conductivity. Too much in the study, the wire was formed into a spiral shape. a straight line that breaks at a lower m plant and a rhododendron with a lower k (for example, '2.4%)

線相比，曲折導線在顯著較高之應變(例如，27·2%)下仍 保持傳導。該導線幾何形狀依賴於導線藉由撓曲而非延伸 而伸長之能力。«統在以不同形狀及在額外平面中進行 可控及精確圖案化之能力上受到限制，由此限制使系統適 應於不同應變及撓曲狀態之能力。 研九提#彈性可延伸金屬互連經歷電阻隨機械應變之 曰加（Mandlik等人，2006年）。Mandlik等人嘗試藉由於 錐1示米圖案化表面上沈積金屬膜而最小化此電阻改變。 然而，彼研究依賴於產生賦予薄金屬線延伸能力之微裂縫 之起伏特徵。微裂缝藉由平面外扭曲及變形而促進金屬彈 性變形。然而，彼等金屬裂縫與厚金屬膜不相容，而替代 地與沈積於圖案化彈性體之頂部的相當窄範圍之薄金屬膜 (例如，約小於30 nm)相容。 向金屬互連賦予可延伸性之一方式為在導體（例如，金 屬）應用期間對基板預加應變（例如，15%至25%)，繼之以 對預應變之自發解除，由此誘發金屬導體互連之波狀起伏 (見（例如）Lacour 等人（2003) ; (2005) ; (2004)，Jones 等人 (2004) ’ Huck 專人（2000) ; Bowden 等人（1998))。Lacour 等 人（2003)報告藉由最初壓縮金條帶來產生自發起皺之金條 帶’電連續性在高達22%之應變（與彈性基板上之金膜之數 124395.doc 200836353 個百分比的斷裂應變相比）下得以保持。然而，彼研究使 用相當薄之金屬膜之層（例如，約105 nm)且相對有限，因 為糸統可潛在地製造可延伸約1 之電導體。 自前述内容顯而易見，存在對於具有改良之可延伸性、 電特性之互連及設備組件及用於快速且可靠地製造多種不 同組恶之可延伸互連的相關製程之需要。預期可撓性電子 凡件領域中之進步在許多^要的新興及既定之技術中起關 鍵作用。然❿，可撓性電子技術之此等應用的成功在很大 •程度上取決於對用於製造在折曲、變形及撓曲構形下顯示 出良好電子、機械及光學特性之積體電子電路及設備的新 型材料、設備組態及商業可行之製造途徑之持續開發。特 疋言之，需要高效能、機械可延展材料及設備組態在延伸 或收縮構形下顯示出有用的電子及機械特性。 【發明内容】 本發明提供可延伸半導體及可延伸電子設備、設備組件 及電路。需要可延伸、可撓曲且適型之電子設備及設備組 件來衣&適於印刷於多種彎曲表面上的電子元件。形狀符 合之没備具有在自可撓性顯示器及電子織物至適型生物及 物理感應器之範圍内的多種應用。因此，本發明之一實施 例為具可撓性且可撓曲之電子設備、設備組件及用於製造 具可撓性且可撓曲之設備的相關方法。藉由提供具有波狀 或弓曲幾何形狀之互連或半導體薄膜而實現該可撓性及可 挽曲性。該幾何形狀提供用於確保系統可延伸且可撓曲而 不會有害地影響效能（即使在猛烈且重複之延伸及/或撓曲 124395.doc 200836353 循辰下）之手奴。此外，該等方法提供精確且準確之幾何 建構之能力，以使得可使設備及/或設備組件之物理特徵 (例如’可延伸性、可撓曲性）適應於系統之操作條件。 舉例而a ’可藉由彎曲互連而使一陣列設備組件彼此連 接’以促進設備組件相對於彼此之獨立移動。然而，陣列 内之局部區域可能具有與其他區域不同的撓曲或延伸要 〆本^月之σ又備及方法促進可具有彎曲互連幾何形狀 (包括⑽如）互連尺寸、週期性、振幅、定向及„區中互^ 之總數目)之局部變化之可撓性系統的建構。產生具有可 控敎向之多個互連促進使互連適應於設備之操作條件。 在一實施例中’本發明提供用於建立與設備 Γ =…連具有第-末端' 第二末端及安= 板：末端之間的中央部分。該等末端結合至基 :可撓性（例如，可延伸）基板、彈性體 其柘、τ &， 斤丨王般I板、剛性 二=性體之基板或者希望向其印刷電子設備、設 其Η、、歹,]之基板。互連之每一末端可附接至自身由 基板支撐的不同訊锯紐姓^ ^丄 主目身由 〇 - #件。互連之中央部分處於撓曲组熊 不舁基板實體接觸（例如，不結合）。在一離 曲組態為中央部八♦ ^ 袠中，此撓 態-般為彎曲：：：之結果。在此態樣中，撓曲組 、，以使彳于若以隔開設備組件 多個設備細处γ山 、々式向一或 、、、件（或下伏基板）施加力，則互連彎曲部八可s 少部分地―吉丨”、立产 口P刀可至 文直从適應設備組件之間的相對 設備組件之間的電接觸。 f運動，同時保持 在-實施例中’互連中央部分為狐形，其具有一振幅， 124395.doc 200836353 令在、力1GG nm與約i龜之間的振 同互連結合區域之數目可大於二，諸如三在1樣中，不 態樣中，在第一互連末端與第：或五。在此 -體接：！：撓曲組態區域，以使得形成不與基板 個不，部分區域。在該組態中二 及/或週期性可為恆定 化。lit自#/ 連之整個縱向長度上變Compared to the wire, the meandering wire remains conductive at significantly higher strains (eg, 27.2%). The wire geometry relies on the ability of the wire to elongate by flexing rather than extending. The ability to control and precisely pattern in different shapes and in additional planes is limited, thereby limiting the ability of the system to adapt to different strain and deflection conditions.研九提# Elastic extendable metal interconnects experience electrical resistance with mechanical strain (Mandlik et al., 2006). Mandlik et al. attempted to minimize this resistance change by depositing a metal film on the patterned surface of the cone. However, his research relies on the undulation characteristics of microcracks that impart the ability to extend thin metal wires. Micro-cracks promote elastic deformation of metals by out-of-plane distortion and deformation. However, their metal cracks are incompatible with thick metal films and are instead compatible with a relatively narrow range of thin metal films (e.g., less than about 30 nm) deposited on top of the patterned elastomer. One way to impart extensibility to a metal interconnect is to pre-strain the substrate (eg, 15% to 25%) during conductor (eg, metal) application, followed by spontaneous release of the pre-strain, thereby inducing metal The undulations of conductor interconnections (see, for example, Lacour et al. (2003); (2005); (2004), Jones et al. (2004) 'Huck (2000); Bowden et al. (1998)). Lacour et al. (2003) reported that the electrical continuity of the self-initiating wrinkled gold strip by the initial compression of the gold strip was up to 22% strain (the number of gold films on the elastic substrate was 124395.doc 200836353 percentage) The strain at break is maintained. However, he has studied the use of a relatively thin layer of metal film (e.g., about 105 nm) and is relatively limited because it can potentially fabricate an electrical conductor that can extend about one. It will be apparent from the foregoing that there is a need for interconnects and device components with improved extensibility, electrical characteristics, and related processes for rapidly and reliably manufacturing a wide variety of different interconnected extensible interconnects. Advances in the field of flexible electronics are expected to play a key role in many emerging and established technologies. The success of such applications of flexible electronic technology, however, depends to a large extent on the integrated electronics used to fabricate good electronic, mechanical and optical properties in flexing, deforming and flexing configurations. Continuous development of new materials, equipment configurations and commercially viable manufacturing routes for circuits and equipment. In particular, high performance, mechanically malleable materials and equipment configurations are required to exhibit useful electronic and mechanical properties in an extended or collapsed configuration. SUMMARY OF THE INVENTION The present invention provides extensible semiconductor and extensible electronic devices, device components and circuits. There is a need for an extendable, flexible and conformable electronic device and device component for clothing & electronic components suitable for printing on a variety of curved surfaces. Shapes are well-suited for a wide range of applications from flexible displays and electronic fabrics to suitable biological and physical sensors. Accordingly, one embodiment of the present invention is a flexible and flexible electronic device, device assembly, and related method for making a flexible and flexible device. This flexibility and flexibility can be achieved by providing an interconnect or semiconductor film having a wavy or bowed geometry. This geometry provides a slave for ensuring that the system is extensible and flexible without adversely affecting performance (even under violent and repetitive extensions and/or flexing). Moreover, the methods provide the ability to accurately and accurately geometrically construct such that the physical characteristics of the device and/or device components (e.g., 'extensibility, flexibility) can be adapted to the operating conditions of the system. For example, a' can interconnect an array of device components by bending the interconnects' to facilitate independent movement of the device components relative to one another. However, localized regions within the array may have different deflections or extensions than other regions. The method may also have curved interconnect geometry (including (10) such as) interconnect size, periodicity, amplitude. The construction of a flexible system with local variations in the orientation, and the total number of zones in the zone. The creation of a plurality of interconnects with controllable orientations facilitates adapting the interconnects to the operating conditions of the device. In an embodiment The invention provides for establishing a central portion between the second end of the device and the second end and the end of the panel: the end is bonded to the base: a flexible (eg, extendable) substrate The substrate of the elastomer, the τ &, the I-plate of the king, the rigid substrate of the second body, or the substrate on which the electronic device is desired to be printed, and the substrate, the substrate, the substrate, the substrate, etc. Attached to the different signal saws supported by the substrate itself ^ ^ 丄 main body body 〇 - #件. The central part of the interconnection is in the flexural group bears the substrate physical contact (for example, does not combine). The song is configured as the central part of the eight ♦ ^ 袠, this deflection state - The result of bending::: In this aspect, the flexing group, so that if the device assembly is separated by a plurality of devices, the γ mountain, the 向-to-one, the, the piece (or the lower part) The substrate is applied with a force, so that the interconnecting bends can be a small portion of the "ji", and the stand-up P-knife can be electrically connected to the electrical device between the opposing device components. f movement, while remaining in the embodiment - the central portion of the interconnection is a fox-shaped, with an amplitude, 124395.doc 200836353, the number of vibrational interconnections between the force 1GG nm and the approximately turtle Greater than two, such as three in one, in the non-existent, at the first interconnect end with the first: or five. Here - body connection:! : Flex the configuration area so that it does not form a partial area with the substrate. In this configuration, the second and/or periodicity can be constant. Lit from #/ 连 across the entire longitudinal length

糊任何形狀’諸如薄膜、線或織帶。在互 之喊中，織帶可具有在約-一随之間 互連末端電連接至之設 ’額外設備組件與接觸 為了促進額外設備組件之置放， 備組件可為接觸焊墊。在一態樣中 焊墊電接觸。 如所4曰出’支樓互連之基板可韻 败j視互連所併入之設備而具 有任何所要材料。在-實施例中，基板包含諸如聚二甲基 石夕氧院（PDMS)之彈性體材料。基板可可逆地變形（例如， PDMS)或不可逆地變形（例如，塑膠）。 在-實施例中，言曼備可基於其物理特徵來進一步加以描 述。舉例而言’本文中提供能夠經受高達25%之應變同時 保持電導率及與設備組件之電接觸的互連。此情況下的"保 持”指代在應變適應期間電導率的小於20%、丨0%或5%之降 低0 在一實施例中，藉由將本文揭示之互連中之任一者併入 具有複數個互連及兩個以上設備組件的設備陣列中來提供 多軸延伸及撓曲。在此實施例中，每一互連提供一對設備 124395.doc 11 200836353 組件之間的電接觸。視所要延伸、撓曲及/或屢縮操作條 件而疋，叹傷陣列可具有為拇格、花形、橋接或直任一組 Γ列如，—區域^柵格組態中u域處於橋接組 悲t)之幾何組態。另夕卜藉由將鄰近設備組件連接至一 個以上之互連（諸如兩個、三個或四個互連）之能力而提供 進-步的延伸及可撓曲性控㈣例而言，係正方形或矩 形之設備組件可鄰近於四個其他設備組件。若每一鄰近對 藉由兩個互連而連接，収備組件將具有自其延 互連。 在-實施例中，設備陣列具有定向於至少兩個不同方向 上之互連之集合。舉例而言’在拇格組態中’互連可具有 彼此垂直或正交之兩個定向以提供在兩：Paste any shape 'such as a film, thread or webbing. In mutual vocalization, the webbing may have electrical connections to the terminals at about one-to-one interconnection. Additional device components and contacts To facilitate placement of additional device components, the component may be contact pads. In one aspect, the pads are in electrical contact. The substrate interconnected by the branch can be used to have any desired material. In an embodiment, the substrate comprises an elastomeric material such as polydimethyl oxalate (PDMS). The substrate can be reversibly deformed (eg, PDMS) or irreversibly deformed (eg, plastic). In an embodiment, the device can be further described based on its physical characteristics. For example, an interconnect capable of withstanding strain up to 25% while maintaining electrical conductivity and electrical contact with equipment components is provided herein. "holding" in this context refers to a decrease in electrical conductivity of less than 20%, 丨0%, or 5% during strain adaptation. In one embodiment, by any of the interconnections disclosed herein Multi-axis extension and flexing are provided in an array of devices having a plurality of interconnects and more than two device components. In this embodiment, each interconnect provides a pair of devices 124395.doc 11 200836353 electrical contact between components Depending on the condition to be extended, flexed, and/or retracted, the sniped array may have a set of folds, flowers, bridges, or straights. For example, the u-domain in the grid configuration is bridged. The geometric configuration of the group t), further providing an extended and flexible approach by the ability to connect adjacent device components to more than one interconnect, such as two, three or four interconnects. In the case of a curved control (4), a square or rectangular device component can be adjacent to four other device components. If each adjacent pair is connected by two interconnections, the collection component will have its own interconnection. In an embodiment, the array of devices has orientations in at least two different directions A collection of interconnected example apos thumb grid configuration 'may have two interconnected oriented perpendicular or normal to each other to provide two of:

力：在另：實謝，設備陣列可包含所有皆二= 對準之互連。彼貫施例在延伸或撓曲被限制於單—方向時 (例如，將電子設備織物撓曲限制於圓柱形表面）可為有用 的。藉由將互連定向於三個或三個以上方向（例如，三個 方向或四個方向）上而提供額外撓曲及/或延伸能力。在一 貫施例中’藉由將設備陣列之互連置放於任一數目之不同 層（諸如彼此鄰近之兩層）中而提供額外控制及穩定性。B 在-實施例中，設備陣列能夠經受高達約15〇%之庠變 而不斷裂。藉由使互連幾何形狀、定向、振幅、週期性、 數目適應於操作條件(例如，單軸對多軸延伸及/或撓曲)而 最大化達到斷裂之應變。 支撑互連或設備陣列之基板可具有為彎曲（諸如，為m 124395.doc 12- 200836353 入、凸起、半球形或其組合)之至少一部分。在一實施例 互連所併入之設備為可延伸之光侦測器、顯示器、發 光器、光伏打裝置、薄片掃描器、LED顯示器、半導體雷 射、光學系統、大面積電子元件、電晶體或積體電路中之 一或多者。 在另-實施例中，本發明係關於用於製造能夠建立與設 備組件之電接觸之、蠻ώ 觸之弓曲互連之各種方法。在一態樣中，向 彈性體基板表面、互連或兩者上施加結合位點之圖案。施 力^使基板及與基板接觸之互連應變。結合位點之圖 案提供特定互連位置盥美祐 y — 一 土板之間的結合。在使基板鬆弛之 後（藉由移除力），即產吐辦 P屋生萼曲互連。改變預加應變之量 值、結合位點圖案化、幾何 咬Π形狀及間距中之一或多者產生 具有不同料或波狀幾何形狀之互連。舉例^，使結合 t點，位置交錯以使得鄰近互連於不同位置處結合至基板 k供丨’反相丨’之互連幾柯花 _ 7形狀。結合位點圖案化係藉由此項 技術中已知的任何年岛》& > 、 而進仃，諸如藉由向彈性體基板表 面塗覆可固化光聚合物。視情況可藉由將互連之至少一部 分囊封於諸如彈性體材料之囊封材料巾來㈣互連。彎曲 互連可具有適於應用之任何形狀。在一實施例中，圖案為 栅格組態、花形㈣、橋接組態或其任一組合。 方法及設備可具有且彳壬彳 任何尺寸之互連，諸如具有在數十 示米至約一毫米之範圍内 间U的y予度或大於約300 nm之厚度。 在一態樣中，彎曲互造百士^ t + 連，、有對應於互連自基板之最大豎直 洋夕位的振幅，且該振幅 係k自100 11311與1 mm之間的範 124395.doc -13- 200836353 圍。對於具有長度及寬度之互連織帶，寬度、振幅或者寬 度及振幅視情況可沿互連之長度而變化。影響振幅之一因 素為在互連結合之前施加至彈性體基板之預加應變。一般 而言，應變愈高，振幅愈大。在一實施例中，施加之力在 彈性體基板中產生一應變，其中該應變選自在20%與100% 之間的範圍。 在一實施例中，互連之一末端電連接至設備組件，且基 板能夠延伸高達約1〇〇%，壓縮高達約5〇%或以低達5 籲之曲率半控而撓曲而無互連斷裂。互連由任何合適材料製 成，諸如金屬或半導體，包括GaA^tSi。在一實施例中: 該等方法提供彎曲互連自彈性體基板至諸如彎曲設備基板 之没備基板的轉印。 替代經由對彈性體基板預加應變而產生上推或彎曲互 ' 了藉由向具有波狀表面之聚合印模施加互 成可延伸且可撓曲之互連。 1 Φ 在A知例中，為了製造可延伸且可撓曲之互連，使在 表面上具有波狀特徵之基板平滑（諸如旋塗聚合物以部分 填充凹入特徵）。該部分填充產生平滑波狀基板。接著視 需要將金屬特徵沈積至平滑波狀基板上且對該等金屬特徵 進:圖案化。平滑波狀基板上之金屬特徵可用於聚合印模 2罪平滑波狀金屬化基板之後續洗鱗。藉由自基板移除聚 合印模而將金屬化基板(具有金屬特徵)轉移至聚合物基板 來製造可延伸且可撓曲之互連。在一實施例中，金屬與基 板之間的界面為域u_8環氧樹脂光阻劑。金屬可為層化 I24395.doc -14- 200836353 之（例如）Au/Al。基板可經類似地層化，例如玻璃層支撐 如-8層，金屬與基板之間的實際界面為Au/Su_8。Force: In another: Thank you, the device array can contain all the interconnections = alignment. This embodiment may be useful when the extension or deflection is limited to a single direction (e.g., flexing the electronic device fabric to a cylindrical surface). Additional flexing and/or extension capabilities are provided by orienting the interconnects in three or more directions (eg, three directions or four directions). In a consistent embodiment, additional control and stability is provided by placing the interconnects of the device array in any number of different layers, such as two layers adjacent to each other. In an embodiment, the array of devices is capable of withstanding up to about 15% enthalpy without breaking. The strain at which fracture is achieved is maximized by adapting the interconnect geometry, orientation, amplitude, periodicity, number to operating conditions (e.g., uniaxial to multiaxial extension and/or deflection). The substrate supporting the interconnect or array of devices can have at least a portion that is curved (such as m 124395.doc 12-200836353 in, protrusion, hemisphere, or a combination thereof). The devices incorporated in an embodiment interconnect are extensible photodetectors, displays, illuminators, photovoltaic devices, sheet scanners, LED displays, semiconductor lasers, optical systems, large area electronic components, transistors Or one or more of the integrated circuits. In other embodiments, the present invention is directed to various methods for fabricating a bow-and-pull interconnection that is capable of establishing electrical contact with a device component. In one aspect, a pattern of binding sites is applied to the surface of the elastomeric substrate, the interconnect, or both. Apply force to strain the substrate and the interconnect with the substrate. The pattern of binding sites provides a specific interconnection location 盥美佑 y — a combination of slabs. After the substrate is slackened (by removing the force), the vomiting device is bent and interconnected. Changing one or more of the magnitude of the pre-applied strain, the patterning of the binding sites, the geometric bite shape, and the spacing produces interconnects having different materials or wavy geometries. For example, the t-dots are combined and the positions are staggered such that the adjacent interconnects are bonded to the substrate k at different locations to form an interconnected chirp_7 shape. The binding site patterning is carried out by any of the islands &> known in the art, such as by coating a surface of the elastomeric substrate with a curable photopolymer. Optionally, the interconnection can be interconnected by encapsulating at least a portion of the interconnect with an encapsulating material such as an elastomeric material. The curved interconnect can have any shape suitable for the application. In one embodiment, the pattern is a grid configuration, a flower shape (four), a bridge configuration, or any combination thereof. The method and apparatus can have and/or interconnect any size, such as having a y pre-degree of U or a thickness greater than about 300 nm in the range of tens of meters to about one millimeter. In one aspect, the curved interpenetrating cymbal ^ t + 连 has an amplitude corresponding to the largest vertical eclipse interconnected from the substrate, and the amplitude k is from a range between 100 11311 and 1 mm 124153 .doc -13- 200836353 Wai. For interconnected webbing having lengths and widths, the width, amplitude or width and amplitude may vary from length to length depending on the length of the interconnect. One of the factors affecting the amplitude is the pre-stress applied to the elastomeric substrate prior to the interconnection bonding. In general, the higher the strain, the greater the amplitude. In one embodiment, the applied force creates a strain in the elastomeric substrate, wherein the strain is selected from the range between 20% and 100%. In one embodiment, one of the ends of the interconnect is electrically connected to the device component, and the substrate is capable of extending up to about 1%, compressing up to about 5% or flexing with a curvature of up to 5 Even broken. The interconnect is made of any suitable material, such as a metal or semiconductor, including GaA^tSi. In one embodiment: the methods provide for the transfer of a curved interconnect from an elastomeric substrate to a substrate that is a substrate such as a curved device. Instead of applying an up-stroke or bend-through via pre-straining the elastomeric substrate, an interconnected extensible and flexible interconnect is applied to the polymeric stamp having the undulating surface. 1 Φ In the case of A, in order to fabricate an extensible and flexible interconnect, the substrate having wavy features on the surface is smoothed (such as a spin-on polymer to partially fill the recessed features). This partial filling produces a smooth wavy substrate. Metal features are then deposited onto the smooth undulating substrate as desired and characterized by: metallization: patterning. The metal features on the smooth wavy substrate can be used to polymerize the impressions 2 subsequent smoothing of the wavy metallized substrate. An extensible and flexible interconnect is fabricated by transferring a metallized substrate (having metal features) to the polymer substrate by removing the polymeric stamp from the substrate. In one embodiment, the interface between the metal and the substrate is a domain u_8 epoxy photoresist. The metal can be layered (for example) Au/Al by I24395.doc -14- 200836353. The substrate can be similarly layered, for example, a glass layer supports, for example, -8 layers, and the actual interface between the metal and the substrate is Au/Su_8.

在印模表面上製造上推互連之替代方法依賴於使彎曲基 板表面變平’使互連與變平之表面接觸且允許基板表面鬆 弛回至其彎曲幾何形狀。如本文所揭示，在一實施例中， 該方法進一步提供在接觸之前對結合位點進行空間圖案 化在此貫施例中，該方法尤為適於將互連及設備組件轉 移至第二相應彎曲基板表面。在一態樣中，諸如黏著劑或 黏著前驅物之結合手段在第二彎曲基板與第一彎曲基板上 連系、、充之間產生結合，其即使在移除彈性體印模之後 亦足以允許互連系統向第二基板之轉移。 在一態樣中，本發明之方法及設備中之任一者具有為 刪S之印模或彈性體基板，其具有對於高達約·之應 變的線性及彈性回應。本發明之互連視情況可為可延伸電 極、可延伸被動式矩陣LED顯示器或光们則器陣列之部 分。在-實施例中，本發明為具有藉由本發明之方法而製 成之任何-或多個互連之可延伸電子設備，其中該電子設 備為可延伸或可撓曲之電極、被動式矩陣咖、太陽能電 池、集光器陣列、生物感應器、化學感應器、光電二極體 陣列或半導體陣列。在-態樣中，電連接至彎曲互連之設 備組件為薄膜、感應器、電路元件 又 α &制兀件、微處理 杰、傳感器或其組合。在一態樣中，藉 _ 電連接至設備㈣而接取互連。精由使互連之一末端 在一實施例中 本發明係，具㈣如波狀半導體奈 米 124395.doc -15- 200836353 薄膜之波狀不米薄臈之方法及結構。該波狀奈米薄膜促進 可撓性在設備組件自身中之併入（與連接設備組件之互連 ，σ撓!·生相比)。在一態樣中，本發明為製造將半導體奈 米薄膜材料自第一基板轉移至第二變形基板之雙軸可延伸 半導體薄膜之方法，其中在轉移之後，允許變形基板鬆他 回至其靜止組態。在一態樣中，半導體材料之厚度在約4〇 nm與600麵之間。二維變形力之解除產生具有二維波狀結 構之奈米薄膜。在-態樣中，藉由改變可撓性基板之溫度 Φ 而產生變形力。 【實施方式】An alternative method of fabricating the push-up interconnect on the surface of the stamp relies on flattening the surface of the curved substrate to bring the interconnect into contact with the flattened surface and to allow the substrate surface to relax back to its curved geometry. As disclosed herein, in one embodiment, the method further provides for spatial patterning of the binding sites prior to contacting. In this embodiment, the method is particularly adapted to transfer interconnects and device components to a second corresponding bend The surface of the substrate. In one aspect, a bonding means such as an adhesive or an adhesive precursor creates a bond between the second curved substrate and the first curved substrate, which is sufficient to allow even after removal of the elastomeric impression. The transfer of the interconnect system to the second substrate. In one aspect, any of the methods and apparatus of the present invention has a stamp or elastomeric substrate that is S-deposited and has a linear and elastic response to strains up to about ≤. The interconnect of the present invention may optionally be part of an extendable electrode, an extendable passive matrix LED display, or an array of light emitters. In an embodiment, the invention is any one or more interconnected extendable electronic devices made by the method of the invention, wherein the electronic device is an extendable or deflectable electrode, a passive matrix coffee, Solar cells, concentrator arrays, biosensors, chemical sensors, photodiode arrays or semiconductor arrays. In the aspect, the device components that are electrically connected to the curved interconnect are films, inductors, circuit components, alpha & components, microprocessors, sensors, or combinations thereof. In one aspect, the interconnection is accessed by _ electrical connection to the device (4). One of the ends of the interconnect is in one embodiment. The present invention is a method and structure of a wavy non-small sheet of a film such as a wavy semiconductor nanowire 124395.doc -15-200836353. The corrugated nanofilm promotes the incorporation of flexibility into the device assembly itself (compared to the interconnection of the connected device components, σ-flex!). In one aspect, the invention is a method of making a biaxially extensible semiconductor film that transfers a semiconductor nanofilm material from a first substrate to a second deformed substrate, wherein after transfer, the deformed substrate is allowed to relax back to its stationary state configuration. In one aspect, the thickness of the semiconductor material is between about 4 Å nm and 600 sides. The release of the two-dimensional deformation force produces a nano film having a two-dimensional wavy structure. In the aspect, the deformation force is generated by changing the temperature Φ of the flexible substrate. [Embodiment]

互連"指代能夠與組件建立電連接或在組件之間建立電 連接之導電材料。特定言之，互連可在分離及/或可相對 於彼此私動之組件之間建立電接觸。視所要設備規格、操 作及應用而定，互連由合適材料製成1於需要高傳導性 之應用而言，可使用典型互連金屬，包括（但不限於）銅、 銀、金、！呂及其類似物、合金。合適傳導材料可包括如 石夕、氧化錮錫或GaAs之半導體。"半導體"指代於非常低之 溫度下為絕緣體’但在約300克耳文之溫度下具有明顯電 導率之任何材料。在本描述中，對術語半導體之使用意欲 與在微電子及電子設備之技術中對此術語之使用相一致。 在本發明中有用之半導體可包含元素半導體，諸如石夕、錄 及金剛石，以及化合物半導體，諸如：諸如队及8脱之 第iv族化合物半導體、諸如A1Sb、A1As、Ain、Aip、Interconnect " refers to a conductive material that is capable of establishing an electrical connection with a component or establishing an electrical connection between components. In particular, the interconnects can establish electrical contact between components that are separate and/or private with respect to each other. Depending on the device specification, operation, and application, the interconnect is made of a suitable material. For applications that require high conductivity, typical interconnect metals can be used, including but not limited to copper, silver, gold, and! Lu and its analogues, alloys. Suitable conductive materials may include semiconductors such as sin, yttrium tin oxide or GaAs. "Semiconductor" refers to any material that is an insulator at very low temperatures but has significant electrical conductivity at a temperature of about 300 grams. In this description, the use of the term semiconductor is intended to be consistent with the use of this term in the art of microelectronics and electronic devices. The semiconductor useful in the present invention may comprise an elemental semiconductor such as a lithograph, a diamond, and a compound semiconductor such as, for example, a group VIII compound semiconductor such as A1Sb, A1As, Ain, Aip,

InSb、lnAs、InN及 InP之 BN、GaSb、GaAs、GaN、GaP、 124395.doc -16 - 200836353 第III-V族半導體、諸如AUGahAs之第III-V族三元化合物 半導體合金、諸如 CsSe、CdS、CdTe、ZnO、ZnSe、ZnS 及ZnTe之第II-VI族半導體、第I-VII族半導體CuCl、諸如 PbS、PbTe及SnS之第IV-VI族半導體、諸如Pbl2、MoS2及 GaSe之層狀半導體及諸如CuO及Cu20之氧化物半導體。術 語半導體包括本徵半導體及非本徵半導體，該等非本徵半 導體摻有一或多種選定材料（包括具有p型摻雜材料及η型 掺雜材料之半導體）以提供對給定應用或設備有用之有益 φ 電子特性。術語半導體包括包含半導體及/或摻雜劑之混 合物的複合材料。在本發明之一些應用中有用之特定半導 體材料包括（但不限於）Si、Ge、SiC、Α1Ρ、AlAs、AlSb、 GaN、GaP、GaAs、GaSb、InP、InAs、GaSb、InP、 InAs 、 InSb 、 ZnO 、 ZnSe 、 ZnTe 、 CdS 、 CdSe 、 ZnSe 、 ZnTe、CdS、CdSe、CdTe、HgS、PbS、PbSe、PbTe、 AlGaAs、AlInAs、AllnP、GaAsP、GalnAs、GalnP、 AlGaAsSb、AlGalnP及GalnAsP。多孔矽半導體材料對於 ® 本發明在感應器及發光材料（諸如發光二極體（LED)及固態 雷射）之領域中的應用為有用的。半導體材料之雜質為除 半導體材料自身或提供至半導體材料之任何摻雜劑以外之 原子、元素、離子及/或分子。雜質為存在於半導體材料 中的可能消極地影響半導體材料之電子特性之不合需要的 材料，且包括（但不限於）氧、碳及包括重金屬之金屬。重 金屬雜質包括（但不限於）週期表上處於銅與鉛之間的族之 元素、鈣、鈉及其所有離子、化合物及/或錯合物。 124395.doc -17- 200836353 、可L伸之互連在本文中用以廣泛地指代能夠經受在一 $多個方向上的諸如延伸、撓曲及/或壓縮之多種力及應 ^而不會有害地影響至設備組件之電連接或自設備組件之 “ ¥的互連因此，可延伸互連可由諸如GaAs之相對脆性 之材料形成，然而歸因於互連之幾何組態而即使在曝露於 顯著變形力（例如，延伸、撓曲、壓縮）下時仍能夠持續起 作用。在-例不性實施例中，可延伸互連可經受大於約 1%、10%或約30%之應變而不斷裂。纟一實例中，藉由使 φ互連之至} -部分所結合至之下伏彈性體基板延伸而產生 應變。 使用"設備組件"以廣泛地指代電氣設備内之個別組件。 組件可為光電二極體、LED、TFT、電極、半導體、其他 光收集/偵測組件'電晶體、積體電路、能夠收納設備組 件之接觸¥塾、薄膜設備、電路元件、控制元件、微處理 器、傳感器及其組合中之一或多者。如諸如金屬蒸鑛、導 、線結合、固體或導電膏之施加的技術中所已知，設備組件 攀可連接至-或多個接觸焊塾。電氣設備一般指代併有複數 個設備組件之設備，且包括較大面積之電子元件、印刷線 .路板冑體电路、設備組件陣列、生物及/或化學感應 器、物理感應器（例如，溫度、光、輕射等等）、太陽能電 池或光伏打陣列、顯示器陣列、集光器、系統及顯示器。 "基板"指代具有能夠支撐包括設備組件或互連之組件之 表面的材料。#合"至基板之互連指代互連之與基板處於 實體接觸且實質上不能夠相對於所結合至之基板表面移動 124395.doc 200836353 的部分。相反，未結合之部分能夠相對於基板作顯著移 動。互連之未結合部分一般對應於（諸>)藉由應變誘發之 互連撓曲而具有”撓曲組態’’之部分。 在此描述之上下文中，”撓曲組態"指代具有由力之施加 所導致之彎曲構形之結構。在本發明中，繞曲結構可呈有 -或多個指疊區域、凸起區域、凹入區域及其任何組合。 舉例而言，可以捲曲構形、起敏構形、，彎曲構形及/或波 狀（亦即，波紋狀）組態而提供在本發明中有用之挽曲結 φ 構。InSb, lnAs, InN, and InP BN, GaSb, GaAs, GaN, GaP, 124395.doc -16 - 200836353 Group III-V semiconductor, Group III-V ternary compound semiconductor alloy such as AUGahAs, such as CsSe, CdS Group II-VI semiconductors of CdTe, ZnO, ZnSe, ZnS and ZnTe, CuCl of Group I-VII semiconductors, Group IV-VI semiconductors such as PbS, PbTe and SnS, layered semiconductors such as Pbl2, MoS2 and GaSe And oxide semiconductors such as CuO and Cu20. The term semiconductor includes intrinsic semiconductors and extrinsic semiconductors that incorporate one or more selected materials (including semiconductors having p-type dopant materials and n-type dopant materials) to provide usefulness for a given application or device. It is beneficial to φ electronic properties. The term semiconductor includes composite materials comprising a mixture of semiconductors and/or dopants. Specific semiconductor materials useful in some applications of the invention include, but are not limited to, Si, Ge, SiC, Α1Ρ, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InP, InAs, GaSb, InP, InAs, InSb, ZnO, ZnSe, ZnTe, CdS, CdSe, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, PbS, PbSe, PbTe, AlGaAs, AlInAs, AllnP, GaAsP, GalnAs, GalnP, AlGaAsSb, AlGalnP, and GalnAsP. Porous germanium semiconductor materials are useful for the application of the invention in the field of inductors and luminescent materials such as light-emitting diodes (LEDs) and solid-state lasers. Impurities of the semiconductor material are atoms, elements, ions and/or molecules other than the semiconductor material itself or any dopant provided to the semiconductor material. Impurities are undesirable materials present in the semiconductor material that may negatively affect the electronic properties of the semiconductor material, and include, but are not limited to, oxygen, carbon, and metals including heavy metals. Heavy metal impurities include, but are not limited to, elements of the family between copper and lead on the periodic table, calcium, sodium, and all of their ions, compounds, and/or complexes. 124395.doc -17- 200836353, an interconnect that is used herein to broadly refer to a variety of forces such as extension, flexing, and/or compression that can withstand in more than one direction and should not An interconnection that adversely affects the electrical connection to the device component or from the device component. Therefore, the extendable interconnection can be formed from a relatively brittle material such as GaAs, but due to the geometric configuration of the interconnection, even when exposed The ability to continue to function is significant under significant deformation forces (eg, extension, flexing, compression). In an exemplary embodiment, the extendable interconnect can withstand strains greater than about 1%, 10%, or about 30%. Without breaking. In an example, strain is generated by interconnecting φ to the portion where the portion is bonded to the underlying elastomeric substrate. Use "equipment components" to broadly refer to individual parts of the electrical device Components can be photodiodes, LEDs, TFTs, electrodes, semiconductors, other light collection/detection components 'transistors, integrated circuits, contacts that can accommodate device components, thin film devices, circuit components, control components ,microprocessor, One or more of the sensors and combinations thereof. As known in the art of application of metallization, wire bonding, wire bonding, solids or conductive pastes, the device component can be attached to - or a plurality of contact pads. Electrical equipment generally refers to equipment that has a plurality of equipment components, and includes a large area of electronic components, printed wiring, circuit board, circuit device arrays, biological and/or chemical sensors, physical sensors (eg, Temperature, light, light, etc.), solar cells or photovoltaic arrays, display arrays, concentrators, systems, and displays. "Substrate" refers to materials that have the surface that can support components including device components or interconnects. The interconnection to the substrate refers to the portion of the interconnect that is in physical contact with the substrate and is substantially incapable of moving 124395.doc 200836353 relative to the substrate surface to which it is bonded. Conversely, the unbound portion can be relative to The substrate is moved significantly. The unbonded portions of the interconnect generally correspond to (the >) portions of the "flex configuration" by strain-induced interconnect deflection. In the context of this description, "deflection configuration" refers to a structure having a curved configuration resulting from the application of force. In the present invention, the winding structure may have - or a plurality of finger-folding regions, convex a region, a recessed region, and any combination thereof. For example, a curled configuration, a responsive configuration, a curved configuration, and/or a wavy (ie, corrugated) configuration can be provided to provide usefulness in the present invention. The buckling knot φ structure.

《可乙伸撓曲互連之撓曲結構可以撓曲結構處於應變 下之構形而結合至諸如聚合物及/或彈性基板之可撓性基 板在"'只施例中，諸如撓曲織帶結構之撓曲結構處於 等於或小於約3G%之應變下、等於或小於約ig%之應變 下、=於或小於約5%之應變下，且在料—些應用為較 ，之實施例中，處於等於或小於約1%之應變下。在一些 Λ Ο中諸如撓曲織帶結構之撓曲結構處於自約ο」％至 約30%之範圍中選擇之應變下、自約請至約⑽之範圍 中k擇的應變下、自約〇5%至約5%之範圍中選擇之應變 下或者可延伸撓曲互連可結合至係設備組件之基板的 基板’該基板⑽自㈣可撓性之基板。基板自身可為平 坦、大體上平坦、彎曲、具有銳緣或其任何組合。可延伸 凡連可用於轉移至此等複雜基板表面形狀中之任何— 或多者。 只要該幾何形 互連可具有任何數目 之幾何形狀或形狀， I24395.doc -19- 200836353 狀或^狀促進互連在 可將一舻方洁砸 r〜祝曲或延伸即可。 又、何形狀描述為"彎曲"或"波狀，丨。在一熊樣 尺寸的苻办— 基板加力以使得下伏基板之 人至Α板Χ互連中產生“或波_為互連之部分結 /結合部分之間的區域未結合Μ互連施加 如，應變)來獲得彼幾何形狀。因此，可藉由結合至 : 端及末端之間未與基板結合之彎曲中央部分來界The flexible structure of the flex-extension interconnect can be bonded to a flexible substrate such as a polymer and/or an elastic substrate in a configuration in which the flexural structure is in strain, in a "only" embodiment, such as flexing The flexural structure of the webbing structure is at a strain equal to or less than about 3 G%, a strain equal to or less than about ig%, a strain at or below about 5%, and in some applications, the embodiment is Medium, at a strain equal to or less than about 1%. In some cases, the flexural structure of the flexural webbing structure is in a strain selected from the range of about ο"% to about 30%, from the range of about to about (10), and the strain is selected from The strain selected from the range of 5% to about 5% or the extendable flexure interconnect can be bonded to the substrate of the substrate of the system component assembly (10) from the (four) flexible substrate. The substrate itself can be flat, substantially flat, curved, have a sharp edge, or any combination thereof. Extensible Anything that can be used to transfer to any of these complex substrate surface shapes—or more. As long as the geometrical interconnection can have any number of geometries or shapes, I24395.doc -19-200836353 can be used to facilitate interconnections. Also, what shape is described as "bend" or "wavy, 丨. In a bear-like size - the substrate is forced to create a "or wave-to-interconnected portion of the junction/bonding portion between the unbonded germanium interconnects in the underlying substrate." For example, strain) to obtain the geometry. Therefore, it can be bounded by the central portion of the bend that is not bonded to the substrate between the end and the end.

疋：：互連。’幫曲”指代相對複雜之形狀，諸如對於在中 、P刀/、有或多個額外結合區域之互連之情況。，，弧狀” 指代具有振幅之_妒3 χ # >…， 叙呈正弦之形狀，其中振幅對應於互連 與基板表面之間的最大分離距離。 、互連可具有任何橫截面形狀…形狀之互連為織帶狀互 連。”織帶”指代具有厚度及寬度的大體上呈矩形形狀之橫 截面、。特定尺寸視經由互連之所要傳導性、互連之組成及 使郴近叹備組件電連接之互連的數目而定。舉例而言，使 鄰近組件連接之橋接組態的互連可具有與使鄰近組件連接 之單互連不同之尺寸。因此，只要產生合適電導率，尺 寸可具有任何合適值，諸如在約10 μχη與1 cm之間的寬度 及在約50 nm與i nm之間的厚度，或者在約〇·〇〇ι與〇1之間 的範圍内之寬度厚度比，或約為〇.〇1之比。 π彈性體"指代可延伸或變形且至少部分地返回其原始形 狀而無顯著永久變形之聚合材料。彈性體基板通常經受實 質上之彈性變形。在本發明中有用之例示性彈性體基板包 括（但不限於）彈性體及彈性體之複合材料或混合物，以及 124395.doc 200836353 顯示出彈性之聚合物及共聚物。在一些方法中，經由沿一 或多個主軸提供彈性基板之擴展之機構來對彈性體基板預 加應變。舉例而言，可藉由使彈性基板沿第一軸擴展（包 括用以將半球形表面變換為平坦表面的在徑向方向上之擴 展）而提供預加應變。或者，可沿複數個軸來擴展彈性基 板（例如經由沿相對於彼此正交定位之第一與第二軸的擴 展）。經由提供彈性基板之擴展之機構而對彈性基板預加 應又的手段包括撓曲、捲繞、折曲、平整、擴展彈性基板 或以其他方式使彈性基板變形。預加應變之手段亦包括藉 升南彈丨生基板之溫度，藉此提供彈性基板之熱膨脹而提 供之預加應變。在本發明中有用之彈性體可包括（但不限 於）熱塑性彈性體、苯乙烯類材料、烯烴材料、聚烯烴、 聚胺基甲酸酯熱塑性彈性體、聚醯胺、合成橡膠、 PDMS、聚丁二烯、聚異丁烯、聚（苯乙烯· 丁二稀·苯乙 烯）、聚胺基甲酸酯、聚氯丁烯及聚矽氧。 將對於長度自L(處於靜止）(在所施加之力下） 之應變界定為：s=AL/L，其中Μ為自靜止之移位距離。 軸向應變指代施加至基板之軸以產生移位之力。亦藉由 在其他方向上施加之力來產生應變，諸如撓曲力、壓縮 力、剪切力及其任何組合。亦可藉由將f曲表面延伸為平 i一表面或是相反過程來產生應變或壓縮。 揚氏模數（Young、modulus)”為材料、設備或層之機械 特性’其指代對於給定物質，應力與應變之比。楊氏模數 可由以下表達式提供； 124395.doc 21 200836353 mm Ial 7j, συ 其中E為揚氏模數，Lg為平衡長度，AL為在所施加之應力 下的長度改變，F為所施加之力且A為力所施加於之面積。 亦可、、二由下式而以拉梅常數（Lame c〇nstant)來表達揚氏模 數： μ(3λ + 2μ) · ~ϊ+ΐ’ (III) 其中λ&μ為拉梅彈性常數。高楊氏模數（或，，高模數”）及低 揚氏棋數（或”低模數"）為對於給定材料、層或設備中之楊 氏模數之里值的相對描述符。在本發明中，高楊氏模數大 於低揚氏模數，對於一些應用較佳地大約10倍，對於其他 應用4更佳大約100倍且對於其他應用甚至更佳大約1000 么。藉由使具有空間變化之揚氏模數之彈性體聚合及/或 精由以在各個位置處具有不同彈性之多個層而使彈性體層 化來獲得複雜表面形狀。 Φ i縮在本文中以與應變類似之方式而使用，但特別指代 用以減小基板之特徵性長度或體積之力，從而α<0。 斷放私代互連中之實體破裂，其使得互連實質上不能 夠導電。 "結合位點之圖案"指代結合手段對支撐基板表面及/或對 Τ連之空間應用’其使得所支狀互連具有與基板之結合 區域及未結合區域。舉例而言，於末端結合至基板且在中 央部分未結合之互連。進一步之形狀控制藉由在中央部分 中提供額外結合位點以使得未結合之區域被劃分為兩個不 124395.doc -22· 200836353 同的中央部分而為可能的。結合手段可包括黏著劑、黏著 則驅物、熔接、光微影、光可固化聚合物。一般而言，結 口位點可藉由多種技術而加以圖案化，且可在能夠提供基 板與特徵（例如’互連）之間的強黏著力之表面活性（waci)區 或及黏著力相對較弱之表面非活性(D的方面加以描述。 可在Waet|4 Win之尺寸方面描述以黏著方式圖案化成直線之 基板。彼等變數連同預加應變之量值一影響互連幾何形 狀0疋:: Interconnection. 'Help' refers to a relatively complex shape, such as for the case of interconnections in the middle, P-knife/, with or with multiple additional bonding areas., arc-shaped refers to _妒3 χ # > ..., in a sinusoidal shape in which the amplitude corresponds to the maximum separation distance between the interconnect and the substrate surface. The interconnects may have any cross-sectional shape... The interconnects of the shapes are ribbon-like interconnects. "Webbing" refers to a generally rectangular cross section having a thickness and a width. The particular dimensions depend on the desired conductivity of the interconnect, the composition of the interconnect, and the number of interconnects that electrically connect the adjacent components. For example, an interconnect that enables a bridge configuration of adjacent components can have a different size than a single interconnect that connects adjacent components. Thus, as long as the appropriate conductivity is produced, the dimensions can have any suitable value, such as a width between about 10 μχη and 1 cm and a thickness between about 50 nm and i nm, or in about 〇·〇〇ι and 〇. The ratio of the width to the thickness in the range between 1 or about 〇.〇1. A pi-elastomer" refers to a polymeric material that can be stretched or deformed and at least partially returns to its original shape without significant permanent deformation. Elastomeric substrates are typically subjected to substantial elastic deformation. Exemplary elastomeric substrates useful in the present invention include, but are not limited to, composites or mixtures of elastomers and elastomers, and 124395.doc 200836353 exhibiting elastomeric polymers and copolymers. In some methods, the elastomeric substrate is pre-stressed via a mechanism that provides expansion of the elastomeric substrate along one or more of the major axes. For example, the pre-strain can be provided by expanding the elastic substrate along the first axis, including the expansion in the radial direction to transform the hemispherical surface into a flat surface. Alternatively, the resilient substrate can be expanded along a plurality of axes (e.g., via expansion along first and second axes that are orthogonally positioned relative to each other). Further means for pre-adding the elastic substrate via a mechanism that provides expansion of the elastic substrate includes flexing, winding, flexing, flattening, expanding the elastic substrate, or otherwise deforming the elastic substrate. The means of pre-straining also includes the temperature at which the substrate is raised by the southern bomb, thereby providing the pre-stress provided by the thermal expansion of the elastic substrate. Elastomers useful in the present invention may include, but are not limited to, thermoplastic elastomers, styrenic materials, olefin materials, polyolefins, polyurethane thermoplastic elastomers, polyamines, synthetic rubbers, PDMS, poly Butadiene, polyisobutylene, poly(styrene·butylene styrene), polyurethane, polychloroprene and polyfluorene. The strain for length from L (at rest) (under the applied force) is defined as: s = AL / L, where Μ is the displacement distance from rest. Axial strain refers to the force applied to the shaft of the substrate to create a displacement. Strain is also generated by forces applied in other directions, such as flexing force, compressive force, shear force, and any combination thereof. Strain or compression can also be produced by extending the surface of the f-curve to a flat surface or vice versa. Young's modulus (Young, modulus) is the mechanical property of a material, device, or layer' that refers to the ratio of stress to strain for a given substance. Young's modulus can be provided by the following expression; 124395.doc 21 200836353 mm Ial 7j, συ where E is the Young's modulus, Lg is the equilibrium length, AL is the length change under the applied stress, F is the applied force and A is the area to which the force is applied. The Young's modulus is expressed by the following formula: Lame c〇nstant: μ(3λ + 2μ) · ~ϊ+ΐ' (III) where λ&μ is the Lame elastic constant. High Young's modulus The number (or, high modulus) and low Young's number (or "low modulus") are relative descriptors for the value of the Young's modulus in a given material, layer, or device. In the invention, the high Young's modulus is greater than the low Young's modulus, preferably about 10 times for some applications, about 100 times better for other applications 4, and even more preferably about 1000 for other applications. Elastomeric aggregation and/or fineness of varying Young's modulus to have different elasticity at various locations The layers are layered to obtain a complex surface shape. Φ i is used herein in a manner similar to strain, but specifically refers to the force used to reduce the characteristic length or volume of the substrate, thereby α < 0. Breaking the physical rupture in the private interconnect, which makes the interconnect substantially incapable of conducting. "The pattern of binding sites" refers to the application of the bonding means to the surface of the supporting substrate and/or to the space of the Τ The branched interconnect has bonded regions and unbonded regions to the substrate. For example, the ends are bonded to the substrate and are not bonded at the central portion. Further shape control provides additional binding sites in the central portion It is possible to divide the unbonded region into two central portions that are not the same as 124395.doc -22·200836353. The bonding means may include adhesive, adhesive, splicing, photolithography, photocurable polymerization. In general, the junction site can be patterned by a variety of techniques and can provide surface adhesion (wac) that provides strong adhesion between the substrate and features such as 'interconnects'. i) Zone or surface inactive with relatively weak adhesion (described in terms of D. The dimensions of Waet|4 Win can be described as a substrate that is patterned into a line by adhesion. The magnitude of these variables along with the pre-stressed value An influence on the interconnect geometry 0

猎由以下非限制性實例可進—步瞭解本發明。本文引用 之所有參考文獻在不與隨附揭示内容不—致的程度上以引 用方式併人本文中。雖然本文之描述含有許多特定細節， 但此等特定細節不應解釋為限制本發明之料，而應解釋 為僅僅提供對本發明之目前較佳的實施例中之—些之說 :月。因此’本發明之範疇應由所附申請專利範圍及其等效 物判定而非由給出之實例所判定。 圚1大體概述用於製造彎曲或波狀互連之一 Γ:金:諸如將為互連之金屬特徵)， 及/或基板：面以：=:蔽:如遮!而處理接觸金 咸j钻者。诸如猎由微機械 之後續二 由在取得全屬=Γ 波崎曲幾何形狀4〇。 的_二ΪΓ變下且隨後解除所施加之張力 弓曲之產生’或藉由在取得金屬特徵之後塵 124395.doc -23- 200836353 縮印模30而提供彎曲之產生。 圖2展示藉由圖〗中所概述之方法而產生之彎曲或波狀金 屬特敛之一實例。圖2為可延伸波狀/彎曲電互連之相 片’遠電互連40係藉由自剛性基板取至經預加應變之可延 伸PDMS橡膠基板30上，隨後解除應變，藉此誘發彎曲而 形成。 圖3中提供用於產生波狀可延伸電極及/或互連之方法。 如圖3A所示’藉由（例如）微機械加工製程而在基板2〇上製 備波狀特徵22。-表面具有波狀特徵22之基板2()充當用於 拉製具有相應波狀表面32之彈性體印模3()的母體。藉由 (諸如）經由蔽隱遮罩之蒸鐘及/或電鍍而在波狀表面32上沈 積金屬特徵10。The invention is further understood by the following non-limiting examples. All references cited herein are incorporated by reference to the extent that they do not disclose the disclosure. Although the description herein contains many specific details, these specific details are not to be construed as limiting the scope of the present invention, but are to be construed as merely providing a description of the presently preferred embodiments of the invention. Therefore, the scope of the invention should be determined by the scope of the appended claims and their equivalents.圚1 is generally outlined for making one of the curved or wavy interconnects: gold: such as metal features that will be interconnected), and/or substrate: face with: =: cover: such as cover! Driller. Such as hunting by the micro-mechanical follow-up two by obtaining the full genus = Γ 崎 曲 曲 geometry geometry 4 〇. The _ ΪΓ ΪΓ 且 且 且 且 且 且 且 且 且 且 且 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或Figure 2 shows an example of a curved or wavy metal feature created by the method outlined in the Figure. 2 is a photo of an extendable wavy/curved electrical interconnect 'the remote electrical interconnect 40 is taken from a rigid substrate onto a pre-strained extensible PDMS rubber substrate 30, followed by strain relief, thereby inducing bending. form. A method for producing a wavy extensible electrode and/or interconnect is provided in FIG. The undulating features 22 are fabricated on the substrate 2 by, for example, a micromachining process as shown in Figure 3A. The substrate 2 () having a wavy feature 22 on its surface acts as a precursor for drawing an elastomeric stamp 3 () having a corresponding undulating surface 32. The metal feature 10 is deposited on the undulating surface 32 by, for example, a steaming bell and/or electroplating through a mask.

圖4提供用於製造平滑波狀彈性體基板之—方法。各向 異性Si(1〇〇)餘刻提供具有銳緣24之基板20(圖4B_頂部晝 面）。旋塗PR藉由在基板20之銳緣谷24中沈積pR %而使銳 緣谷平滑。抵靠基板20而澆鑄彈性體印模34。印模34具有 銳緣凹人特徵。在印模34上澆鑄第二彈性體印模％以產生 具有銳緣峰之印模。以Su_8 5_印印模⑽在適當時使其 固化。旋塗PR 26使5G之銳緣谷平滑。抵#具有平滑谷之 5〇而淹碡彈性體基板3G。移除基板加顯露波狀且平滑之 表面32。 圖54概述製造波狀可延伸電極之-方法：於波狀母體上 沈積，隨後在彼母體上洗鑄，，使印模固化，且藉此 在釋放後即將電極轉移至母體。圖55展示藉由圖4中之方 124395.doc -24· 200836353 法結合圖54中之方法而製備的在波狀PDMS上之可延伸金 屬電極（Au，3〇〇 nm厚）之影像。於金屬特徵1〇與基板2〇之 間展示界面112。界面112可包含促進底部晝面中所說明的 藉由印模30而進行的金屬特徵1〇之移除之材料。簡言之， 一方法使用：於預清潔之2"x3”玻璃載片上旋塗su_8 1〇之 /專塗層以使得玻璃表面被完全覆蓋。使載片與具有 所要波狀表面特徵（平滑谷及陡峰）之PDMS印模接觸且輕 柔施加壓力以使得所有氣穴經移除。在正面於UV燈下閃 _二口化印模/模結構歷時3 0秒，翻轉，且在背面固化額外 之4〇移。在固化之後，在熱板上於65。(：下烘焙5分鐘。在 烘焙之後，允許樣本冷卻至室溫，並將SU-8模自PDMS母 體剝離。SU:8現將具有具有銳緣谷之波狀表面起伏。為了 =此等谷趨於平滑，將一份SU-8 2與一份較薄之811_8混 合，且以高RPM而旋塗歷時90秒。曝露κυν燈下歷時2〇 秒來固化且於65°C進行後烘焙歷時3分鐘。一旦冷卻，即 經由電鍍、光微影及蝕刻/起離及/或經由蔽蔭遮罩之蒸鍍 而沈積金屬線或接觸點。以MPTMS#SU_8上之金屬處理工 小時，且接著抵靠其而澆鑄彈性體基板。在移除後， PDMS具有波狀表面起伏(其具有平滑之峰及谷)連同轉移 之金屬結構。圖55為藉由圖54中概述之製程而製造之波狀 可延伸電極之相片，且亦提供可延伸波狀金屬電極的作為 所施加之拉伸應變（高達3〇%)之函數的量測而得之電阻 料。 圖5提供藉由圖4中概述之方法而製造之平滑波狀？_ 124395.doc •25· 200836353 基板30之一實例。設備組件⑽可於非波狀區域（例如，大 體上平坦之#分）中支撑於波狀基板且在需要時連接至 互連10。 圖θ展不向銳緣谷或凹入特徵中旋塗平滑層之一實例。 藉由旋塗光可固化環氧樹脂26而使銳緣基板34(圖6Α)平滑 來產生平滑波狀基板。_由抵靠圖⑶之基板洗禱叩⑽印 模且Ik後自基板34移除印模3〇而獲得具有平滑波狀表面32 之彈性體（例如，PDMS)印模3〇。 圖7為可延伸电極之相片。圖了八為具有波狀表面u之彈 丨生體基板30的検截面之相片。圖冗為藉由在波狀彈性體基 板表面32上瘵鍍金屬丨〇而製成之電極的俯視顯微相片。影 像之焦平面處於波狀起伏之峰上。在圖7C中，焦平面處於 波狀起伏之谷上且金屬互連1〇處於與電極25〇之電接觸 中。藉由經由蔽蔭遮罩而蒸鍍至平滑波狀彈性體基板上來 沈積可延伸電極。在此實例中，電極25〇在受張力而延伸 至鬲達約10%的期間保持經由互連1〇之傳導性及連接性。 本文揭示之方法及設備可用以製造多種電子設備，包括 (例如）可延伸被動式矩陣LED顯示器（見圖8)。將波狀電極 (例如，互連10及接觸焊墊70)圖案化於兩個彈性體基板3〇 上。藉由轉印而將設備組件60(在此情況中為ILED像素）於 接觸焊墊70處圖案化波狀電極上。相應地組裝兩個基板⑽ 以使得互連10以不同定向（在此實例中為垂直）而延行。圖9 說明該被動式矩陣LED顯示器之2D機械可延伸性。除了能 夠單軸及雙軸延伸以外，顯示器能夠顯著撓曲而不破裂。 124395.doc -26 - 200836353 該多軸撓曲向彎曲表面提供模製電子設備之能力以製造線 曲電子設備且併入智慧電子織物或顯示器巾。 弓 彎曲電子設備之一該實例提供於圖1〇中。圖1〇說明包含 刀布於球面’弓曲透鏡上之無機光電二極體陣列之"人造眼” 。展示人造陣列之四個不同視圖。圖11示意性地說明對於 可延伸平坦電子設備之要求。為了圍繞球形表面而包繞平 坦薄片，薄片必須在一個以上的方向上延伸。 圖12為用於製造能夠與彎曲表面相符之可延伸彎曲半導 體陣列之衣造機制。藉由在基板（諸如晝面⑴中所說明之"母 晶圓”）上之選擇性Au4Ti/Au沈積來製造薄si元件。使以結 合至經預加應變（指示gL+AL)及uv〇處理之pDMs(晝面 (=))。如所說明，在兩個方向上提供預加應變。該結合係 藉由此項技術中已知之任何手段而進行，諸如（例如）塗覆 至Si元件、基板或兩者之黏著劑。以選定圖案應用結合手 •k以使付Si具有將保持與基板之實體接觸（在變形之後）之 結合區域及不與基板實體接觸之處於撓曲組態的其他區域 (例如，相對於結合區域中之黏著力不結合或弱結合之區 域）°自晶圓基板移除經預加應變之基板以顯露半導體陣 列之平坦拇格（晝面（iU))。在將基板自L + AL鬆弛至L後， 互連1 〇即在弱結合之區域中彎曲（見晝面（iv))為撓曲組 恶’而没備組件60(例如，半導體以接觸焊墊）仍保持結合 至基板3 0。因此，彎曲互連10向整個陣列賦予可延伸性， 且特定吕之相對於其他組件6〇移動組件6〇之能力。不破壞 組件60之間的電接觸而藉此向彎曲表面或可撓曲表面提供 124395.doc -27· 200836353 保形能力。 圖13提供採取單一柵格組態14〇(頂部兩幅畫面）、具有 複數個連接之互連160的栅格組態（左下部晝面）及花形組態 15〇(右下^晝面）之_曲可延伸⑨陣列之光學顯微影像。在 此等實例中之每一者中，互連10在中央部分中彎曲，互連Figure 4 provides a method for making a smooth wavy elastomeric substrate. The anisotropic Si (1 〇〇) is provided with a substrate 20 having a sharp edge 24 (Fig. 4B_ top surface). The spin coating PR smoothes the sharp valley by depositing pR % in the sharp valley 24 of the substrate 20. The elastomer stamp 34 is cast against the substrate 20. The stamp 34 has a sharp-edged feature. A second elastomer stamp % is cast on the stamp 34 to produce an impression having a sharp peak. The Su_8 5_printing die (10) is cured as appropriate. Spin coating PR 26 smoothes the sharp edge valley of 5G. The ## has a smooth valley and drenches the elastomer substrate 3G. The substrate is removed to reveal a wavy and smooth surface 32. Figure 54 outlines the method of making a wavy extensible electrode: deposition on a wavy precursor followed by casting on a parent to cure the stamp and thereby transfer the electrode to the precursor after release. Fig. 55 shows an image of an extensible metal electrode (Au, 3 〇〇 nm thick) on a wavy PDMS prepared by the method of Fig. 4, 124395.doc -24·200836353 in combination with the method of Fig. 54. The interface 112 is shown between the metal features 1〇 and the substrate 2〇. Interface 112 may include material that facilitates removal of metal features 1 by stamp 30 as illustrated in the bottom face. Briefly, a method uses: spin coating su_8 1〇/special coating on a pre-cleaned 2"x3” glass slide to allow the glass surface to be completely covered. The slide has the desired wavy surface characteristics (smooth valley) And the PDMS impression of the steep peak contact and gently apply pressure to remove all air pockets. Flashing on the front side under the UV lamp _ two-pass impression die structure for 30 seconds, flipping, and curing on the back side After the curing, on the hot plate at 65. (: Bake for 5 minutes. After baking, allow the sample to cool to room temperature, and peel the SU-8 mold from the PDMS matrix. SU: 8 will now Has a wavy surface undulation with a sharp edge valley. In order to = such valleys tend to smooth, a piece of SU-8 2 is mixed with a thinner 811_8 and spin coated with high RPM for 90 seconds. Exposure κ υ 灯 lamp It is cured in 2 second seconds and post-baked at 65 ° C for 3 minutes. Once cooled, the metal lines are deposited via electroplating, photolithography and etching/disengagement and/or evaporation through a shadow mask. Contact point. The metal is treated on the MPTMS#SU_8 for an hour, and then the elastomer is cast against it. Substrate. After removal, the PDMS has undulating surface undulations (which have smooth peaks and valleys) along with the transferred metal structure. Figure 55 is a photograph of a wavy extensible electrode fabricated by the process outlined in Figure 54, Also provided is a resistive material of the extensible wavy metal electrode as a function of the applied tensile strain (up to 3%). Figure 5 provides a smooth wave produced by the method outlined in Figure 4. An example of the substrate 30. The device assembly (10) can be supported on the corrugated substrate in a non-wavy region (eg, substantially flat) and connected to the interconnect 10 as needed. Figure θ shows an example of a spin-coated smoothing layer in a sharp-edged valley or recessed feature. The smooth-edged substrate 34 (Fig. 6A) is smoothed by spin-coating the photocurable epoxy resin 26 to produce a smooth wavy substrate. The elastomer (e.g., PDMS) stamp 3 having a smooth wavy surface 32 is obtained by scrubbing the sputum (10) stamp against the substrate of Fig. (3) and removing the stamp 3 from the substrate 34 after Ik. It is a photo of an extendable electrode. Figure 8 shows an elastic substrate 3 having a corrugated surface u. A photograph of a cross-section of 0. The figure is a top-down photomicrograph of an electrode made by ruthenium-plating a metal crucible on the surface 32 of the corrugated elastomer substrate. The focal plane of the image is on a undulating peak. In Figure 7C, the focal plane is on the undulating valley and the metal interconnect 1 is in electrical contact with the electrode 25. The deposition is extensible by evaporation onto the smooth wavy elastomer substrate via a shadow mask. Electrode. In this example, electrode 25A maintains conductivity and connectivity via interconnect 1 during tension extension to about 10%. The methods and apparatus disclosed herein can be used to fabricate a variety of electronic devices, including (for example) an extendable passive matrix LED display (see Figure 8). Wave electrodes (e.g., interconnect 10 and contact pads 70) are patterned on the two elastomer substrates 3''. Device component 60 (in this case, an ILED pixel) is patterned on the wavy electrode at contact pad 70 by transfer. The two substrates (10) are assembled accordingly such that the interconnects 10 are extended in different orientations (vertical in this example). Figure 9 illustrates the 2D mechanical extensibility of the passive matrix LED display. In addition to being able to uniaxially and biaxially extend, the display can flex significantly without breaking. 124395.doc -26 - 200836353 The multi-axis flexing provides the ability to mold electronic devices to curved surfaces to make linear electronic devices and incorporate smart electronic or display towels. One example of a bow bending electronic device is provided in Figure 1A. Figure 1 illustrates an "artificial eye" of an inorganic photodiode array comprising a knife cloth on a spherical 'bent lens. Shows four different views of the artificial array. Figure 11 schematically illustrates for an extendable flat electronic device In order to surround a flat sheet around a spherical surface, the sheet must extend in more than one direction. Figure 12 is a fabrication mechanism for fabricating an extendable curved semiconductor array that conforms to a curved surface. The selective Au4Ti/Au deposition on the "male wafer" described in the face (1) is used to fabricate a thin Si element. PDMs (facets (=)) were combined to be treated with pre-stressed (indicative gL+AL) and uv〇. As explained, pre-stress is provided in both directions. The bonding is carried out by any means known in the art, such as, for example, an adhesive applied to a Si element, a substrate, or both. Applying the bonding hand k in a selected pattern such that the Si has a bonding region that will remain in physical contact with the substrate (after deformation) and other regions in a flex configuration that are not in physical contact with the substrate (eg, relative to the bonding region) The region where the adhesion is not combined or weakly bonded) The pre-strained substrate is removed from the wafer substrate to reveal the flat thumb (iU) of the semiconductor array. After the substrate is relaxed from L + AL to L, the interconnect 1 弯曲 bends in the weakly bonded region (see face (iv)) as a flexing group and does not have component 60 (eg, semiconductor for contact soldering) The pad) remains bonded to the substrate 30. Thus, the curved interconnect 10 imparts extensibility to the entire array, and the ability of the particular component to move the component 6 relative to other components. The electrical contact between the components 60 is not thereby disrupted thereby providing a conformal capability to the curved or flexible surface 124395.doc -27.200836353. Figure 13 provides a grid configuration (lower left side) with a single grid configuration of 14 turns (top two frames), interconnects 160 with multiple connections, and a flower configuration 15〇 (bottom right) The optical image of the 9 array can be extended. In each of these examples, interconnect 10 is bent in the central portion, interconnected

末端附接至接觸焊墊70。互連及接觸焊塾70支撐於PDMS 基板30上。圖14至圖17進一步提供許多不同互連幾何形狀 之特寫視圖。圖14提供電子顯微影像以展示具有中央部分 馨90連同第一末端1〇〇及第二末端11〇之基本彎曲或波狀互連 1〇。中央部分採取撓曲組態。末端100及11〇連接至設備組 件（在此情況下為接觸焊墊7〇)，從而能夠建立與設備組件 之電接觸。互連10及接觸焊墊7〇支撐於諸如彈性體pDMs 基板之基板3 0上。 圖15為藉由複數個（兩個）互連16〇彼此連接之鄰近設備 組件（例如，接觸焊墊70)之電子顯微影像。圖15與圖u比 較論證了可藉由-❹個互連1G來使設備組件7g彼此連接 以向電子設備提供額外可撓性。舉例而言，具有相對較大 之佔據面積之設備組件或接觸焊塾7〇視情況可藉由多個互 連而連接至另一設備組件。 圖16為採取花形組態15G之互連之電子顯微影像。與拇 格組態相比，花形組態具有在兩個以上之縱向方向上定向 之互連。在此實例中，存在四個不同定向以使得諸如接觸 知墊70之设備組件能夠接觸對角鄰近之設備組件。在此實 例中，互連10具有電連接至設備組件（未圖示）之互連末: 124395.doc -28- 200836353 、/、11〇之間的可選結合區域102，藉此將中央部分90劃 分為各具有撓曲組態之兩個未結合區域92。 圖17為以橋接組態13()配置之互連的電子顯微影像。在 橋接組恶中，存在橋接中央部分高峰120，三個或三個以 上互連末端自其延伸。舉例而言，於未結合區域中相交之 :個互連導致高峰120，其具有自其延伸之四個互連末 端。對於設備組件為交錯配置之情形，高峰120可具有自 ^延伸之三個末端。在設備組件之間存在多個互連連接之 情況下，四個以上之末端可自高峰120延伸。 雖本文提供之圖式中之許多者展示係接觸焊墊之設 備組件，但本文主張的方法及設備㈣連接至大量設備組 件以提供可延伸且因此形狀符合之電子設備。舉例而言， 圖18展不設備組件6〇，丨為藉由支樓於彈性體基板％上之 弓曲互連1 〇而連接至採取陣列組態之其他光電二極體的光 電二極體。 圖19描繪f曲”狀—維延伸行為。畫面⑴為在未施 加任何應變力之情況下的彎曲矽陣列之圖像。施加延伸力 (如藉由晝面⑴上方之箭頭所指示）以使陣列在一方向上延 伸如晝面（2)至（4)所展示，彎曲互連變平。當於晝面（5) 中解除延伸力時，陣列返回至其彎曲組態（見畫面（6)至 (8))晝面（1)與（8)之間的比較展示在延伸之前與延伸之後 的彎曲組態相同，此指示該過程可逆。 設備組件之彎曲陣列可易於轉移至彎曲表面，包括剛性 或非彈性彎曲表面。藉由圖20之氣泡或氣球印模4〇〇來提 124395.doc -29- 200836353 供用於促進對彎曲表面夕仅 衣由之保形接觸的一設備及製程之實 例。彈性體基板3〇(在此每加士 1长此只例中為約20 μπι厚之PDMS薄膜） 口定於外成L至3GG中以提供由面向内部之基板壁及外殼 月工至所界定之腔至容積31〇。施加正壓力（例如，腔室 中之£力大於外部壓力)產生能夠與凹入狀收納基板保形 接觸之凸起200基板表面。相反，負壓力產生能夠與凸起 狀收、、内基板保形揍觸之凹入表面2〗〇。對基板之局部彈性 (例如，揚氏杈數）之空間控制允許產生複雜彎曲幾何形 狀。圖20之左下部晝面說明用於藉由引入氣體至腔室31〇 或自L至3 10私除氣體之注射器而控制外殼容積3 1 〇中的壓 力之一構件。圖式右侧之影像為pDMS薄膜回應於正壓力 之增加水準的不同彎曲。用於在彈性體基板上提供彎曲互 連之方法及設備中之任一者可與用於轉印至彎曲基板的該 寺设備一起使用。 圖2 1中概述用於在彎曲表面上產生彎曲或上推互連之另 一構件。抵靠成形之表面澆鑄薄彈性體膜以產生具有至少 一背曲部分之彈性體基板。基板能夠延伸以使表面變平， 從而使得基板能夠與彎曲及平坦表面相符。將互連施加至 平坦印模，且在解除延伸力之後，基板表面即鬆弛回至彎 曲幾何形狀，從而在互連中產生應變，藉由互連中央部分 之上推而適應該應變。 圖22中提供由圖20所示之設備造成的彎曲矽陣列之n二 維π延伸之實例。在此實例中’互連包含採取栅袼組態之 複數個彎曲互連連接，其中互連由290 nm厚之Si製成。將 124395.doc -30- 200836353 最初為平坦之彎曲料列（左上部影像）置放人外殼中，且 施加正壓力以使陣列擴展為氣泡或氣球組態（例如，彎曲 表面）。最右側影像中展示最大擴展，且隨後移除正磨 力。類似於對於平坦基板之單軸延伸的結果，此"彎曲"延 伸為可逆的。在最大化與彎曲表面之保形接觸的擴展之任 一階段’可藉由此項技術中已知之任何手段來將陣列轉移 至幫曲表面。®23展示藉由氣球印模而進行的至塗佈有黏The end is attached to the contact pad 70. The interconnect and contact pads 70 are supported on the PDMS substrate 30. Figures 14 through 17 further provide close-up views of a number of different interconnect geometries. Figure 14 provides an electron micrograph to show a substantially curved or wavy interconnect having a central portion scent 90 along with a first end 1 〇〇 and a second end 11 〇. The central part takes the flex configuration. The ends 100 and 11 are connected to a device component (in this case, a contact pad 7A) to enable electrical contact with the device components. The interconnect 10 and the contact pads 7 are supported on a substrate 30 such as an elastomeric pDMs substrate. Figure 15 is an electron micrograph of a neighboring device component (e.g., contact pad 70) connected to each other by a plurality of (two) interconnects 16". Figure 15 is a comparison with Figure u demonstrating that the device components 7g can be connected to one another by means of one interconnect 1G to provide additional flexibility to the electronic device. For example, a device component or contact pad 7 having a relatively large footprint may be connected to another device component by a plurality of interconnections. Figure 16 is an electron micrograph of the interconnection of the flower configuration 15G. The flower configuration has an interconnection oriented in more than two longitudinal directions compared to the thumb configuration. In this example, there are four different orientations to enable device components such as contact pads 70 to contact diagonally adjacent device components. In this example, the interconnect 10 has an interconnecting end that is electrically connected to a device component (not shown): an optional bonding area 102 between 124395.doc -28-200836353, /, 11〇, whereby the central portion is 90 is divided into two unbonded regions 92 each having a flex configuration. Figure 17 is an electron micrograph of the interconnect configured in bridge configuration 13(). In the bridging group, there is a peak 120 in the central portion of the bridge, from which three or more interconnecting ends extend. For example, intersecting in an unbonded region: an interconnect results in a peak 120 having four interconnected ends extending therefrom. For the case where the device components are in a staggered configuration, the peaks 120 can have three ends that extend from ^. Where there are multiple interconnect connections between device components, more than four ends may extend from peak 120. While many of the figures provided herein show device components that are in contact with the pads, the methods and apparatus (4) claimed herein are coupled to a large number of device components to provide an electronic device that is extendable and thus conformal in shape. For example, FIG. 18 shows the device component 6〇, which is connected to the photodiode of the other photodiode adopting the array configuration by the bow interconnect 11 on the elastomer substrate%. . Figure 19 depicts the f-shape-dimensional extension behavior. Picture (1) is an image of a curved 矽 array without any strain applied. Apply an extension force (as indicated by the arrow above the face (1)) to The array extends in one direction as shown by the faces (2) to (4), and the curved interconnect is flattened. When the extension force is released in the face (5), the array returns to its curved configuration (see screen (6) The comparison between (1) and (8) shows that the bending configuration is the same as before the extension, which indicates that the process is reversible. The curved array of equipment components can be easily transferred to curved surfaces, including Rigid or inelastically curved surface. Figure 32395.doc -29- 200836353 is provided by the bubble or balloon impression of Figure 20 for an example of a device and process for promoting conformal contact with a curved surface. The elastomer substrate 3〇 (here, a PDMS film of about 20 μm thick in each case of the first one) is placed in the outer L to 3GG to provide the substrate wall and the outer casing facing the interior. Define the cavity to a volume of 31 〇. Apply positive pressure (for example, in the chamber The force of the £ is greater than the external pressure) produces a surface of the substrate of the protrusion 200 which can be in conformal contact with the concave-shaped receiving substrate. Conversely, the negative pressure generates a concave surface which can be conformed to the convex shape and the inner substrate conforms to the concave surface. The spatial control of the local elasticity of the substrate (for example, Young's turns) allows for the creation of complex curved geometries. The lower left side of Figure 20 illustrates the use of gas to chamber 31 or from L to 3 10 In addition to the gas injector, one of the pressures in the housing volume 3 1 控制 is controlled. The image on the right side of the figure is the different bending of the pDMS film in response to the increase in positive pressure. Used to provide a curved interconnect on the elastomeric substrate. Any of the methods and apparatus can be used with the temple apparatus for transfer to a curved substrate. Another component for creating a curved or push-up interconnect on a curved surface is outlined in Figure 21. The shaped surface casts a thin elastomeric film to create an elastomeric substrate having at least one backing portion. The substrate can be extended to flatten the surface to enable the substrate to conform to the curved and flat surface. Applying the interconnect to the flat The stamp is stamped, and after the extension force is released, the surface of the substrate is relaxed back to the curved geometry to create strain in the interconnect, which is accommodated by pushing over the central portion of the interconnect. Figure 20 is provided in Figure 20. An example of a two-dimensional π extension of a curved tantalum array caused by the device shown. In this example, the interconnect includes a plurality of curved interconnect connections in a grid configuration, wherein the interconnects are made of 290 nm thick Si. Place 124395.doc -30- 200836353 initially for the flat curved row (upper left image) in the human shell and apply a positive pressure to expand the array into a bubble or balloon configuration (eg, curved surface). The maximum expansion is shown in the image and then the positive grinding force is removed. This "bend" extends to be reversible similar to the result of a uniaxial extension of the flat substrate. The array can be transferred to the curved surface by any means known in the art at any stage of maximizing the expansion of the conformal contact with the curved surface. ®23 shows the adhesion to the coating by the balloon impression

著劑（彈性體基板或SU_8)之玻璃透鏡上之约刷之實例。 透鏡可為凹人或凸起的4此實例中，r分別等於㈣ mm及 9.33 mm。 實例1 :半導體奈求織帶中之受控弯曲結構連同在可延伸 電子元件中之應用實例 =半導體奈米結構之組成、形狀、空間位置及/或幾何 組悲之控制對於此等材料之幾乎所有應用均為重要的。雖 然存在用於界定奈米線及奈米織帶之材料組成、直徑、長 度及位置之方法，但存在相對較少用於控制其二維及三維 (2D及3D)組態的方法。本文提供用於在奈米織帶中形成原 本難以產生的特定類別之3D形狀之機械策略。此實例涉及 對用以提供對黏著位點之空間控制之微影圖案化表面化學 反應/、用以誘發文到良好控制的局部移位之支撐基板之彈 性變形的組合使用。可藉由力學分析模型而定量地描述以 此方式及此等組態而產生於（^^與Si之奈米織帶中的經精 確設計之彎曲幾何形狀。作為一應用實例，特定結構提供 至具有極高可延伸性水準（高達〜1〇〇%)、可壓縮性水準（高 124395.doc -31- 200836353 達〜25%)及可撓曲性水準（具有低至〜5 mm之曲率半徑）之電 子元件的途徑。 對奈米織帶及奈米線之2維及3維組態在其生長期間加以 控制以避免諸如捲曲、環狀及分支布局之特定幾何形狀， 或在其生長之後加以控制以（作為實例）藉由將此等元件耦 接至受到應變之彈性體支撐物而產生正弦波狀結構或藉由 使用成層系統中的内建殘餘應力而產生管狀（或螺旋）結 構。具有波狀幾何形狀之半導體奈米織帶受到關注，此部 籲分因為其使得高效能可延伸電子元件系統能夠用於潛在應 用，諸如球面彎曲焦平面陣列、智慧型橡膠外科手套及適 型結構保健監視器。電子設備自身可延伸之此方法與達成 使用剛性设備島狀物連同可延伸金屬互連之此等相同應用 、，曰代方法不同且可能為對其之補充。先前描述之波狀奈 米織帶具有兩個主要劣勢：⑴其以由材料之模數及織帶之 厚度所界定之固定週期及振幅以幾乎不提供對波紋的幾何 •㈣或相位之控制之方式而自發形成，及（ii)受到由此製 程所導致的非最佳波狀幾何形狀之限制，其可適應之最大 f變在2G%S3G%之範圍内。此處引人之程序使用微影界 定之表面黏著位點連同支撐基板之彈性變形來達成彎曲組 恶（错由對其幾何形狀之確定性控制）。週期性或非週期性 "又什對於該等結構之大規模、有組織陣列中的個別奈米織 T之任一選定集合為可能的。經設計以用於可延伸電子元 件之專用幾何形狀致能高達接近15〇%之應變範圍（即使在 諸如GaAs之脆性材料中），此與力學分析模型一致且多達 I24395.doc -32- 200836353 先前報告之結果的十倍。 圖24展不此程序中之步驟。製造始於對遮罩之製備，該 遮罩用於對聚二曱基珍氧烧（pDMS)之彈性體基板上的表 面化干黏著位點進行圖案化。此過程涉及在稱作遮罩 的不常見類型之振幅光罩（經由步驟i製造）與1>〇148保形接 觸時經由該光罩而傳遞深紫外（UV)光（240-260 nm)。UV0 遮罩佔有透明區域中起伏之凹入特徵，使得向uv之曝露 在接近PDMS之表面處產±臭氧之圖案化㊣。臭氧將以_ CH3及-H端基支配之未改質疏水性表面轉換為以_〇1^及_〇· Si-Ο-官能基終止的高度極性及反應性表面（亦即，活性表 面）。未曝露之區保持未改質之表面化學（亦即，非活性表 面）。此處引入之程序涉及於較大單軸預加應變（對於長度 自L變為L+AL’〜，缝）下在_s基板（厚度為〜4腿） 上之曝露(步驟Π)。對於具有簡單週期性線條圖案之遮 罩，吾人在步驟⑴中將圖24A之步驟（叫中的活性條帶（指 示為標有，，活性表面"之線條）與非活性條帶之寬度（例如， 鄰近活性條帶之間的距離)表示為W4Win。活性區可強 烈且不可逆地結合至在表面上具有曝露之_〇h或·Μ基團 的其他材料。如下文所.概括，利用此等圖案化黏著位點以 在奈米織帶中形成經清楚界定之扣幾何形狀。或者，藉由 在互連與基板接觸之前對互連類似地進行圖案化而提供類 似的黏著結合位點圖案。 Μ㈣中’㈣織帶由單㈣及GaAs組成。藉由使用 先雨描述之程序（見等人’ Seienee 311，肌212 124395.doc -33- 200836353 (2〇〇6))而由絕緣體上矽（S0I)晶圓製備矽織帶。織帶 包括藉由分子束磊晶法（m〇lecular吨eam epitaxy，MBE)在 (lOO)SI-GaAs晶圓上形成的摻雜SiinMGaAs(i2〇随^載 體濃度為4xl017 cm3)、半絕緣GaAysLGaAs ; ι5〇 _)及 AlAs(200 nm)之多層。藉由使用沿（〇^丨）結晶定向而光阻 圖案化之線條作為蝕刻遮罩而在HjO4及Η2〇2之水性蝕刻 劑中化學蝕刻磊晶層，從而界定織帶。移除光阻劑且接著 將郎圓/文泡於HF之乙醇溶液（乙醇與49%之水性hf的體積 _ 為2,1)中移除AlAs層，藉此釋放具有由光阻劑判定之寬度 (對於圖 24D 中之實例為 1〇〇 μπι)的 GaAs(n_GaAs/SI_GaAs) 之織帶。乙醇向HF溶液之添加減小易碎織帶歸因於乾燥期 間之毛細管力之作用而破裂的機率。較低表面張力（與水 相比）亦最小化GaAs織帶之空間布局中的乾燥誘發之無 序。在最後步驟中，沈積較薄Si〇2層（〜30 nm)以提供必要. Si-OH表面化學以供與pdms之活性區域結合。 抵靠經UVO處理、預延伸之PDMS基板（平行於預加應變 籲之方向而定向之織帶）而層壓經處理之SOI或GaAs晶圓，將 其在烘箱中於9〇。〇下烘焙數分鐘，且移除晶圓，從而將所 有織帶轉移至PDMS的表面（步驟iv)。加熱促進Si織帶上之 原生Si〇2層或GaAs織帶上之沈積的Si〇2層與PDMS之主動 區之間的保形接觸及該兩者之間的強石夕氧烧鍵（亦即，_〇_ Si-Ο·)之形成。相對較弱之凡得瓦爾力（waais force)使織 帶結合至PDMS之非活性表面區域。使pdmS中之應變鬆弛 經由織帶與PDMS之非活性區域的實體分離而產生彎曲（步 124395.doc -34- 200836353 驟V)。歸因於強化學鍵結，織帶保持在活性區域中繫栓至 PDMS。所得3D織帶幾何形狀（亦即，彎曲之空間變化的圖 案）視預加應變之量值及表面活性之圖案（例如，貿… 之形狀及尺寸）而定。（可經由織帶上之圖案化結合位點而 達成類似結果）。對於簡單線條圖案之情況，In及預加應 變判定彎曲之寬度及振幅。當Waet>1〇〇 ^瓜時，歸因於產 生”波狀”石夕之類型的機械不穩定性，在相同織帶中亦形成 具有比彎曲小得多的波長及振幅之正弦波(見圖25，以不 同Waet形成之樣本之影像）。作為製造之最後步驟，可藉由 澆鑄並固化液態預聚物而將31)織帶結構囊封於pDMst (見 圖24步驟vi)。歸因於液體之低黏度及低表面能，其流動且 填充形成於織帶與基板之間的間隙（見圖26)。 圖24D展示PDMS上之彎曲GaAs織帶之斜視掃描電子顯 微鏡（scanning electron micr〇sc〇pe，SEM)影像，其中、尸 60/〇且Waet-i〇 0111且界111==4〇〇 μιη。該影像顯示對於陣列中 之所有織帶具有共有幾何形狀及空間自干相位之均勾週期 卜生弓曲。將錨固點適當地對齊至微影界定之黏著位點。插 圖展不結合區域之SEM影像；寬度為〜1〇 μηι，其與…⑽相 一致。該等影像亦顯示PDMS之表面為平坦的，即使在結 合位點處亦如&。與先前報告之強純之波狀結構大不相 同的此行為提示，對於此處描述之情況，pDMs誘發移 位，但並不密切涉及於彎曲製程中（亦即，其模數不影響 織帶之幾何形狀）。在此意義上，PDMS表示用於經由施二 於黏著位點處之力而控制織帶的柔軟、非破壞性工具。 124395.doc -35 - 200836353 圖27八展示以不同4^形成於？〇148上之彎曲織帶的側視 光學顯微相片（Wact=10 μηι且Win=190 μηι)。彎曲之高度.（例 如’ ”振幅，’）隨著spre而增加。非活性區域中之織帶在較低 4“處未充分分離（見以81)1^=11.3%及25.5%而形成之樣本）。 在較高8?1^處，織帶（厚度h)與PDMS分離以形成具有由丁式 特徵化之豎直移位輪廓之彎曲： r y 1 + cos —χ • 其中： 4 L'L2 / ^ pre Η2π2λ V 12L? j } + ε Pre ) Kct 2 oAn example of a brush on a glass lens of a coating (elastomer substrate or SU_8). The lens can be concave or convex. In this example, r is equal to (4) mm and 9.33 mm, respectively. Example 1: Controlled Bending Structure in Semiconductor Nylon Ribbons, along with Application Examples in Extensible Electronic Components = Control of Composition, Shape, Spatial Position, and/or Geometry of Semiconductor Nanostructures for almost all of these materials Applications are important. Although there are methods for defining the material composition, diameter, length and position of the nanowire and nanoweb, there are relatively few methods for controlling their 2D and 3D (2D and 3D) configurations. This paper provides a mechanical strategy for forming a particular class of 3D shapes that would otherwise be difficult to produce in a nanoweb. This example relates to the combined use of a lithographic patterned surface chemical reaction to provide spatial control of the adhesion sites/elastic deformation of the support substrate to induce localized displacement to good control. The precisely designed bending geometry produced in this way and in such a configuration can be quantitatively described by the mechanical analysis model. As an application example, the specific structure is provided to have Extremely high extensibility level (up to ~1%), compressibility level (up to 25% for high 124395.doc -31-200836353) and flexibility level (with radius of curvature as low as ~5 mm) Approach to electronic components. The 2-dimensional and 3-dimensional configurations of nanoweb and nanowires are controlled during their growth to avoid specific geometries such as curl, ring and branch layout, or to control them after growth A tubular (or spiral) structure is created (as an example) by coupling the elements to a strained elastomeric support to produce a sinusoidal structure or by using built-in residual stresses in a layered system. The shape of the shape of the semiconductor nano-webbing has attracted attention, because it enables high-performance extendable electronic component systems for potential applications, such as spherically curved focal plane arrays, smart rubber Gloves and conformable structure health monitors. The electronic device itself can be extended by this method in the same way as the use of rigid device islands together with extendable metal interconnects, which is different and may be In addition, the previously described corrugated nanobelt has two major disadvantages: (1) it has a fixed period and amplitude defined by the modulus of the material and the thickness of the webbing to provide little control over the geometry of the corrugation (4) or phase. Spontaneously formed, and (ii) limited by the non-optimal wavy geometry caused by the process, the maximum f which can be adapted is in the range of 2G% S3G%. The surface-bonding sites defined by the shadows together with the elastic deformation of the supporting substrate to achieve the bending group evil (the fault is determined by the deterministic control of its geometry). Periodic or aperiodic and even for the large-scale of such structures Any selected set of individual nanowebs T in the tissue array is possible. The specialized geometry designed for the extensible electronic components is capable of achieving a strain range of up to approximately 15% (ie, In brittle materials such as GaAs, this is consistent with the mechanical analysis model and up to ten times the results previously reported by I24395.doc -32-200836353. Figure 24 shows the steps in this procedure. Manufacturing begins with the mask The mask is used to pattern surfaced dry adhesion sites on a polydimethyl sulfonate (pDMS) elastomeric substrate. This process involves an unusual type of amplitude mask called a mask ( Passing through step i) to transfer deep ultraviolet (UV) light (240-260 nm) through the reticle when conformal contact with 1> 148. The UV0 mask occupies the concave feature of the undulation in the transparent region, so that the uv is Exposed to the surface near the surface of PDMS, the patterning of ozone is positive. Ozone converts the unmodified hydrophobic surface dominated by _CH3 and -H end groups to _〇1^ and _〇· Si-Ο-functional groups. Terminated highly polar and reactive surfaces (ie, active surfaces). Unexposed areas maintain unmodified surface chemistry (i.e., inactive surface). The procedure introduced here involves exposure to a larger uniaxial pre-strain (for lengths from L to L+AL'~, slit) on the _s substrate (thickness ~ 4 legs) (step Π). For a mask with a simple periodic line pattern, in step (1), the step of Figure 24A (the active strip (indicated as marked, active surface " line) and the width of the inactive strip ( For example, the distance between adjacent active strips is indicated as W4Win. The active region can be strongly and irreversibly bonded to other materials having exposed 〇h or Μ groups on the surface. As summarized below, utilize this The patterned adhesion sites are patterned to form a well-defined buckle geometry in the nanotextile. Alternatively, a similar adhesive bond site pattern can be provided by similarly patterning the interconnect before the interconnect is in contact with the substrate. In (4), the '(4) webbing consists of single (four) and GaAs. It is made up of insulators by using the procedure described in the first rain (see et al 'Seienee 311, Muscle 212 124395.doc -33- 200836353 (2〇〇6)) S0I) wafer preparation woven tape. The webbing includes doped SiinMGaAs formed on a (100) SI-GaAs wafer by molecular beam epitaxy (MBE) (i2〇 with carrier concentration is 4xl017 cm3), semi-insulating GaAysLGaAs; Multiple layers of ι5〇 _) and AlAs (200 nm). The ribbon is chemically etched in the aqueous etchant of HjO4 and Η2〇2 by using a photoresist patterned along the crystal orientation as an etch mask to define the webbing. The photoresist is removed and then the AlAs layer is removed from the HF solution of ethanol (the volume of ethanol and 49% of the aqueous hf is 2,1), whereby the release is determined by the photoresist. A web of GaAs (n_GaAs/SI_GaAs) having a width (1 〇〇μπι for the example in Fig. 24D). The addition of ethanol to the HF solution reduces the chance that the fragile web will rupture due to the capillary force during drying. The lower surface tension (compared to water) also minimizes the drying induced disorder in the spatial layout of the GaAs webbing. In the final step, a thinner layer of Si 2 (~30 nm) is deposited to provide the necessary. Si-OH surface chemistry for binding to the active region of pdms. The treated SOI or GaAs wafer was laminated against a UVO treated, pre-stretched PDMS substrate (webbed oriented parallel to the pre-stressed orientation) and placed in an oven at 9 Torr. The crucible is baked for a few minutes and the wafer is removed to transfer all webbing to the surface of the PDMS (step iv). Heating promotes conformal contact between the deposited Si〇2 layer on the Si ribbon or the deposited Si〇2 layer on the GaAs webbing and the active region of the PDMS and the diarrhea bond between the two (ie, The formation of _〇_Si-Ο·). The relatively weak waais force binds the webbing to the inactive surface area of the PDMS. The strain relaxation in the pdmS is caused to be bent by the separation of the webbing from the entity of the inactive area of the PDMS (step 124395.doc-34-200836353 step V). Due to strong chemical bonding, the webbing remains tied to the PDMS in the active area. The resulting 3D webbing geometry (i.e., the pattern of spatial variations in curvature) depends on the magnitude of the pre-strain and the pattern of surface activity (e.g., the shape and size of the trade). (Similar results can be achieved via patterned binding sites on the webbing). In the case of a simple line pattern, In and pre-addition determine the width and amplitude of the bend. When Waet>1〇〇^, due to the mechanical instability of the type of "wavy" Shixi, a sine wave with a much smaller wavelength and amplitude than the bend is formed in the same webbing (see figure 25, images of samples formed by different Waet). As a final step in the manufacture, the 31) webbing structure can be encapsulated in pDMst by casting and curing the liquid prepolymer (see step vi in Figure 24). Due to the low viscosity and low surface energy of the liquid, it flows and fills the gap formed between the webbing and the substrate (see Figure 26). Figure 24D shows a scanning electron microscopy (SEM) image of a curved GaAs webbing on a PDMS, wherein the corpse 60/〇 and Waet-i〇 0111 and the boundary 111 == 4 〇〇 μιη. The image shows a uniform cross-section of the common geometry and spatial self-drying phase for all of the webbing in the array. The anchor points are properly aligned to the adhesion sites defined by the lithography. The SEM image of the uncombined area is displayed; the width is ~1〇 μηι, which is consistent with (10). These images also show that the surface of the PDMS is flat, even at the binding site as & This behavior, which is quite different from the previously reported strong wavy structure, suggests that pDMs induce displacement in the case described here, but are not closely related to the bending process (ie, the modulus does not affect the webbing). Geometric shape). In this sense, PDMS denotes a soft, non-destructive tool for controlling the webbing via the force applied to the adhesive site. 124395.doc -35 - 200836353 Figure 27 shows how the difference is formed in 4? Side view optical micrograph of the curved webbing on 〇148 (Wact=10 μηι and Win=190 μηι). The height of the bend. (eg ' amp' amplitude, ') increases with spre. The webbing in the inactive area is not sufficiently separated at the lower 4" (see 81) 1^=11.3% and 25.5% ). At a higher 8?1^, the webbing (thickness h) is separated from the PDMS to form a bend with a vertical shift profile characterized by the dent: ry 1 + cos —χ • where: 4 L'L2 / ^ pre Η2π2λ V 12L? j } + ε Pre ) Kct 2 o

AA

[2 二 + 如藉由對均句薄層中所形成之、彎曲 定，織帶中之最大拉伸應變辑 刀析戶 匕 peak h ：2 ：y 彎曲之寬度為2Ll且週期為21^。因 h2峨3遠小於W在此報告中亦即二^ ^ 獨立於織帶之機械特性（例如’厚 以 數等等)，且主要由黏著位點之布局及：：組成、揚 此結論提示如下方法之一般適用性'由應變所判 由任何材料製成. I24395.doc -36- 200836353 帶均將形成類似彎曲幾何形狀。此預測與藉由此處所使用 之si與GaAs之織帶而獲得的結果相一致。在圖27八中繪製 為虛線之對於33.7%及56.0%之預加應變而計算所得的輪廓 與在GaAs織帶中的觀測結果良好地符合。另外，除了在低 已…處（表1及表2)，圖27A所示之彎曲之參數（包括週期、寬 度及振幅）與分析計算相一致。此研究之一引起關注之結 果在於織帶中之最大拉伸應變較小（例如，〜12%)，即使 對於較大epre(例如’ 56.0%)亦如此。如隨後所論述，此定 比致能可延伸性，即使對於諸如GaAs之脆性材料的情況亦 如此。 微影界定之黏著位點可具有比與圖24中之結構相關聯之 簡單格栅或柵格圖案複雜的幾何形狀。舉例而言，可在個 別織帶中形成具有不同寬度及振幅之彎曲。作為實例，圖 27B展示彎曲Si織帶（寬度及厚度分別為5〇 ^111及29〇 n⑷之 SEM影像，該織帶以5〇%之預加應變及以貿⑽=15叫^且界…[2 2 + If the bending is determined by the thin layer formed in the thin layer, the maximum tensile strain in the web is analyzed. 匕 peak h : 2 : y The width of the bend is 2Ll and the period is 21^. Because h2峨3 is much smaller than W in this report, that is, two ^ ^ independent of the mechanical properties of the webbing (such as 'thickness, etc.), and mainly consists of the layout of the adhesive sites and:: composition, the conclusion of this conclusion is as follows The general applicability of the method 'is determined by strain from any material. I24395.doc -36- 200836353 The bands will all form a similar curved geometry. This prediction is consistent with the results obtained by the web of si and GaAs used herein. The profile calculated for the pre-stressed strain of 33.7% and 56.0% in Fig. 27 is in good agreement with the observations in the GaAs webbing. In addition, the parameters of the bending (including the period, width, and amplitude) shown in Fig. 27A are identical to the analytical calculations except at the low (Tables 1 and 2). One of the concerns of this study is that the maximum tensile strain in the webbing is small (e.g., ~12%), even for larger epres (e.g., '56.0%). As discussed later, this ratio is capable of extensibility, even in the case of brittle materials such as GaAs. The lithographically defined adhesive sites may have a complex geometry than the simple grid or grid pattern associated with the structure of Figure 24. For example, bends having different widths and amplitudes can be formed in individual webbings. As an example, Fig. 27B shows a SEM image of a curved Si webbing (width and thickness of 5 〇 ^ 111 and 29 〇 n (4), respectively, which is pre-strained by 5 〇 % and traded by (10) = 15 and bound...

沿織帶的長度等於350、300、250、25〇、3〇〇及35〇 μη^ 特徵之黏著位點而形成。該影像清楚地展示織帶中之每一 者中的鄰近彎曲之寬度及振幅之變化。彎曲織帶亦可以對 於不同織帶之不同相位而形成 '圖27c呈現以彎曲中隨垂 直於織帶之長度的距離而、線性變化之相位來設計的Si系統 之實例。用於此樣本之UV0遮罩具有分別為15 μιη&25〇 μη之Wact及win。PDMS印模上之活性條帶與si織帶之間的 角度為30。歸因於對黏著位點之簡單微影控制而可易於 達成許多其他可能性，且一些可能性展示於（例如）圖〗3至 124395.doc -37· 200836353 圖17中。 具有spre=60%、Wact=10 μπι及不同Win的PDMS上之彎曲 GaAs織帶之簡單實例（如圖27D中所示）說明對於可延伸電 子元件中的應用為重要之態樣。與對力學之分析解良好符 合之輪廓展示在Win=l 00 μπι(及更小）時，歸因於GaAs中之 破裂而導致的失效。失效係由超過GaAs之屈服點（〜2%)的 拉伸應變（在此情況下為〜2.5%)所導致。因此可藉由選擇 與8!^成比例之Win(»Wact)來達成對延伸及壓縮之強健性的 # 最佳組態。在此情形中，可適應高達及大於100%之預加 應變。吾人藉由向PDMS支撐物施加力而直接論證此類型 之可延伸性。織帶之區段的端至端距離（Lpr()jeeted)之改變提 供根據下式而量化可延伸性及可壓縮性之手段： projected *100%， rmax 一 7-0 h projected ^ p T° projected ^projected 表示斷裂之前的最大/最小長度， -S- ^projected 為鬆弛 狀態下之長度。延伸及壓縮分別對應於大於及小於 L projected 之 。Waet=10 μπι 且 Win=400 μπι且 spre=60% 的 PDMS 上之 彎曲織帶顯示出60%之可延伸性（亦即spre)及高達30%之可 壓縮性。將織帶嵌入於PDMS中在機械上保護結構，且亦 產生持續可逆回應，但在力學上存在微小改變。特定言 之，可延伸性及可壓縮性分別減小至〜5 1.4%(圖28A)與 〜18.7%(圖28B)。織帶頂部之PDMS基質部分歸因於下伏 PDMS的固化誘發之收縮而使彎曲之峰微微變平。小週期 波紋在較大壓縮應變下歸因於產生先前所述之波狀織帶結 124395.doc -38 - 200836353 構之類型的自發力學而形成於此等區域中。如圖28b所說 明，機械失效傾向於開始於此等區中，由此減小可壓縮 性。waet=10 μπι且Win=3〇〇 μιη之彎曲結構避免此類型之行 為。雖然該#實例顯示出比圖28Α所示之實例稍低的可延 伸性，但短週期波紋之缺少將可壓縮性增加至〜％%。總 體而言，形成於具有圖案化表面化學黏著位點之預延伸: PDMS基板上的具有幫曲之單晶GaAs奈米織帶顯示出高於 5 0 /〇之可延伸性及大於25%之可壓縮性，此對應於接近 鲁1〇〇%之滿標度應變範圍。*匕等數字藉由增加一及u藉 由使用具有比PDMS咼之伸長率的基板材料而得到進一步 改良。對⑨更加精密之系、统，亦彳重複此等製造程序來產 生具有多個彎曲織帶之層的樣本（見圖29)。 此較大可延伸性/可壓縮性之直接結果為極大程度之機 械可撓曲性。圖30A至圖30C呈現說明此特徵之撓曲組態 的光學顯微相片。分別將PDMS基板（厚度為〜4 —挽曲為 # 凹入（〜5.7 mm之半徑）、平坦及凸起（〜6.i mm之半徑）的脊 1。該等影像說明輪廓如何改變以適應撓曲誘發之表面應 變（對於此等情況為〜鳩至25%)。實際上，形狀類似於在 壓縮（〜20%)及張力（〜2〇%)中所獲得之形狀。嵌入之系統歸 口於中性機械平面效應而暴貝示出更高水準之可挽曲 性。當頂部與底部!>麵層具有類似厚度時，在撓曲期間 不存在言曲形狀上的改變（圖3 0D)。 ，了論證功能電子設備中之此等機械特性，吾人使用具 有頒似於圖30所示之輪廓的輪廓之彎曲GaAs織帶，藉由將 124395.doc *39· 200836353 ㈣金電極沈積至織帶之SM}aA_上以進行肖特基接觸 (SCh〇ttky e()ntaet)而建立金屬半導體_金屬光债測器⑽M PD)。圖31Α展示MSM pD在延伸〜5〇%之前及之後的幾何 形狀及等效電路及俯視光學顯微相片。在無光之情況下， 幾乎無電流流過PD;電流隨著紅外光束（波長為〜85〇㈣ 之增加的照射而增大（圖31B)。電流/電壓（I_v)之不對稱特 徵可歸因於接觸點之電特性的差異。圖31C(延伸）及圖 31D(l缩）展示在不同程度之延伸及壓縮所量測之電 流在PD延伸高達44.4%時增大，且接著隨著進—步延伸而 :小。因此光源之每單位面積的強度為恆定的，所以電流 隨延伸之增大可歸因於f_As織帶的投影面積消作有 效面積’ Seff)隨織帶變平之增大。使pD進一步延伸可能誘 發GaAs織帶之表面上及/或晶格中的缺陷，其導致電流之 減小且最終在斷裂時導致斷路。類似地，壓縮使。減小 且:此使電流減小（圖31D)。此等結果指示，嵌人於pDMs 基質中之彎曲GaAs織帶提供對於諸如耐磨監視器、彎曲成 像陣列及其他設備之各種應用為有用的充分可㈣/可壓 縮類型之光感應器。 總之’此實例指示’具有以微影方式界定之黏著位點之 柔軟彈性料W於在半導體奈米織帶巾形成特定類型之 3維組態的工具為有料。可延伸電子元件提供此等類型 之結構的許多可能應用領域之—實例。簡單pD設備論證— ，能力。對結構之高水準控制及將高溫處理步驟（例如， 歐姆接觸之形成）與彎曲製程及醒S分離之能力指示較為 124395.doc -40- 200836353 複雜之設備（例如，電晶體及較小電路薄片）為可能的。鄰 近織帶中之彎曲的受到良好控制之相位提供電互連多個元 件之機會。又，雖然此處報告之實驗使用GaAs與Si奈米織 帶，但其他材料（例如，GaN、InP及其他半導體）及其他結 構（例如，奈米線、奈米薄膜）與此方法相容。Formed along the length of the webbing equal to the adhesion sites of the 350, 300, 250, 25, 3, and 35〇 μη^ features. The image clearly shows the change in width and amplitude of adjacent bends in each of the webbing. The curved webbing can also be formed for different phases of different webbings. Figure 27c presents an example of a Si system designed with a linearly varying phase in a bend with a distance perpendicular to the length of the webbing. The UV0 mask used for this sample has Wact and win of 15 μηη & 25 μ μη, respectively. The angle between the active strip on the PDMS stamp and the si webbing is 30. Many other possibilities are easily attributable to simple lithographic control of the adhesion sites, and some possibilities are shown, for example, in Figures 13 to 124395.doc -37·200836353 Figure 17. A simple example of a curved GaAs webbing on a PDMS with spre = 60%, Wact = 10 μm and different Win (as shown in Figure 27D) illustrates an important aspect for applications in extensible electronic components. A contour that is in good agreement with the analytical solution to mechanics exhibits a failure due to cracking in GaAs at Win = l 00 μπι (and smaller). The failure is caused by a tensile strain (~2.5% in this case) that exceeds the yield point of GaAs (~2%). Therefore, the #optimal configuration for the robustness of the extension and compression can be achieved by selecting Win(»Wact) proportional to 8!^. In this case, up to and greater than 100% of the pre-stress can be accommodated. We directly demonstrate this type of extensibility by applying a force to the PDMS support. The change in the end-to-end distance (Lpr()jeeted) of the section of the webbing provides a means to quantify the extensibility and compressibility according to the following formula: projected *100%, rmax a 7-0 h projected ^ p T° projected ^projected represents the maximum/minimum length before breaking, and -S- ^projected is the length in the relaxed state. The extension and compression correspond to greater than and less than L projected, respectively. The curved webbing on PDMS with Waet = 10 μπι and Win = 400 μπι and spre = 60% showed 60% extensibility (also known as spre) and up to 30% compressibility. Embedding the webbing in the PDMS mechanically protects the structure and also produces a sustained reversible response, but with minor changes in mechanics. In particular, the extensibility and compressibility are reduced to ~5 1.4% (Fig. 28A) and ~18.7%, respectively (Fig. 28B). The PDMS matrix at the top of the webbing is partially flattened by the cure-induced shrinkage of the underlying PDMS. The small periodic corrugations are formed in these regions at a greater compressive strain due to the spontaneous mechanics of the type of wavy webbing 124395.doc-38 - 200836353 previously described. As illustrated in Figure 28b, mechanical failure tends to begin in such zones, thereby reducing compressibility. The curved structure of waet=10 μπι and Win=3〇〇 μιη avoids this type of behavior. Although the # example shows a slightly lower extensibility than the example shown in Fig. 28, the lack of short period corrugations increases the compressibility to ~%%. In general, it is formed on a pre-extension with a patterned surface chemical adhesion site: a single crystal GaAs nanowebbing with a buckling on a PDMS substrate exhibits an extensibility above 50/〇 and greater than 25%. Compressibility, which corresponds to a full scale strain range close to Lu 〇〇%. * Numbers such as 匕 are further improved by using a substrate material having an elongation ratio higher than that of PDMS by adding one and u. For more sophisticated systems, these manufacturing procedures are repeated to produce samples with multiple layers of curved webbing (see Figure 29). The direct result of this greater extensibility/compressibility is a great degree of mechanical flexibility. Figures 30A through 30C present optical micrographs illustrating the flex configuration of this feature. The PDMS substrate (thickness of ~4 - tow is # recessed (~5.7 mm radius), flat and convex (~6.i mm radius) ridge 1 respectively. These images illustrate how the contour changes to suit Flexural induced surface strain (~鸠 to 25% for these cases). In fact, the shape is similar to that obtained in compression (~20%) and tension (~2〇%). At neutral mechanical plane effects, the scallops show a higher level of flexibility. When the top and bottom!> top layers have similar thicknesses, there is no change in the shape of the singularity during flexing (Figure 3 0D) In order to demonstrate these mechanical properties in functional electronic devices, we use a curved GaAs ribbon with a contour that is similar to the contour shown in Figure 30, by depositing 124395.doc *39· 200836353 (4) gold electrodes onto the webbing On the SM}aA_, a metal semiconductor_metal optical debt detector (10) M PD is established by performing Schottky contact (SCh〇ttky e() ntaet). Figure 31 shows the geometry and equivalent circuit and top view optical micrograph of the MSM pD before and after extending ~5〇%. In the absence of light, almost no current flows through the PD; the current increases with increasing illumination of the infrared beam (wavelength of ~85〇(4)) (Figure 31B). The asymmetry of current/voltage (I_v) can be attributed Due to the difference in electrical characteristics of the contact points, Figures 31C (extension) and Figure 31D (l) show that the current measured at different degrees of extension and compression increases as the PD extends up to 44.4%, and then proceeds with - The step extends: small. Therefore, the intensity per unit area of the light source is constant, so the increase of the current with the extension can be attributed to the fact that the projected area of the f_As webbing is reduced as the effective area 'Seff) increases with the flattening of the webbing. Further extension of the pD may induce defects on the surface of the GaAs webbing and/or in the crystal lattice, which results in a decrease in current and eventually an open circuit upon breaking. Similarly, compression makes. Decrease and: This reduces the current (Figure 31D). These results indicate that curved GaAs webbing embedded in a pDMs matrix provides a fully compliant (four)/compressible type of light sensor useful for a variety of applications such as wear resistant monitors, curved imaging arrays, and other devices. In summary, this example indicates that a soft elastic material having a lithographically defined adhesive site is a material for forming a particular type of 3-dimensional configuration in a semiconductor nanowebbing towel. Extensible electronic components provide examples of many possible fields of application for these types of structures. Simple pD device demonstration - ability. The high level of control of the structure and the ability to separate the high temperature processing steps (eg, the formation of ohmic contacts) from the bending process and the wake-up S are more detailed. 124395.doc -40- 200836353 Complex equipment (eg, transistors and smaller circuit sheets) ) is possible. The well-controlled phase of the bend in the adjacent webbing provides the opportunity to electrically interconnect multiple components. Also, although the experiments reported herein use GaAs and Si nanowebbing, other materials (e.g., GaN, InP, and other semiconductors) and other structures (e.g., nanowires, nanofilms) are compatible with this process.

GaAs織帶之製造：具有定製磊晶層之GaAs晶圓（細節描 述於本文中）係購自IQE Inc·，Bethlehem，PA。光微影及濕 式化學蝕刻產生GaAs織帶。以5000 rpm之速度將AZ光阻 # 劑（例如AZ 5214)旋轉澆鑄於GaAs晶圓上歷時30秒，且接 著於100°C下軟烘焙1分鐘。經由具有以沿GaAs之（011)結 晶方向而定向之圖案化線的光罩之曝露繼之以顯影在光阻 劑中產生線條圖案。溫和〇2電漿（亦即，除渣製程）移除殘 餘光阻劑。GaAs晶圓接著在蝕刻劑（4 mL H3P04(85重量 %)、52 mL 112〇2(30重量％)及48 mL去離子水）中經各向異 性蝕刻1分鐘，在冰水浴中經冷卻。以於乙醇中稀釋之HF 溶液（Fisher® Chemicals)(在體積上為1:2)來溶解AlAs層。 ® 在通風櫃中使具有在母晶圓上之經釋放織帶的樣本乾燥。 以藉由電子束蒸鍍沈積之30 nm的Si02來塗佈經乾燥之樣 本0Fabrication of GaAs webbing: GaAs wafers with custom epitaxial layers (described in detail herein) were purchased from IQE Inc., Bethlehem, PA. Photolithography and wet chemical etching produce GaAs webbing. AZ photoresist (e.g., AZ 5214) was spin cast onto a GaAs wafer at 5000 rpm for 30 seconds and then soft baked at 100 °C for 1 minute. Exposure to a mask having patterned lines oriented in the (011) crystallographic direction of GaAs is followed by development to produce a line pattern in the photoresist. The mild 〇2 plasma (i.e., the slag removal process) removes the residual photoresist. The GaAs wafer was then anisotropically etched for 1 minute in an etchant (4 mL H3P04 (85 wt%), 52 mL 112〇2 (30 wt%) and 48 mL deionized water) and cooled in an ice water bath. The AlAs layer was dissolved in HF solution (Fisher® Chemicals) diluted in ethanol (1:2 in volume). ® Dry the sample with the released webbing on the mother wafer in a fume hood. The dried sample was coated with 30 nm of SiO 2 deposited by electron beam evaporation.

Si織帶之製造：由絕緣體上矽（SOI)晶圓（Soitect，Inc.， 頂部石夕290 nm，内埋氧化物400 nm，p型）來製造石夕織帶。 使用AZ 5214光阻劑藉由習知光微影法對晶圓進行圖案 化，且藉由 SF6 電漿（PlasmaTherm RIE，SF6 40 seem，50 毫托，100 W)對其進行蝕刻。在以丙酮將光阻劑洗淨之 124395.doc •41- 200836353 後，接著在HF(49%)中餘刻内埋氧化物層。 UVO遮罩之製造·於食人魚溶液s〇iuti〇n)中清 洗熔融石英载片（於6(rc)15分鐘且以充足的水對其進行徹 底沖洗。藉由氮氣吹掃來乾燥經清洗之載片，且將其置放 於電子束蒸鍍器之腔室中以藉由5 nm2Ti(作為黏著層）及 100 nm之An(對sUV光之遮罩層）的連續層而塗佈。以 3000 rpm之速度將負性光阻劑（亦即，SU8 5)旋轉澆鑄於載 片上歷時30秒來產生〜5 μιη厚之膜。軟烘焙、曝露於 光、後烘焙及顯影在光阻劑中產生圖案。溫和〇2電漿（亦 即，除渣製程）移除殘餘光阻劑。光阻劑充當遮罩以分別 糟由金蝕刻劑（亦即，：^與〇之水性溶液）及鈦蝕刻劑（亦 即’ HC1之稀釋溶液）來餘刻au與丁1。 PDMS印模之製造：藉由將預聚物（A:B=1:10，Sylgard 184，Dow Corning)傾注至皮氏培養皿中繼之以於65。〇下 烘焙4小犄來製備具有〜4 mm之厚度的pDMs基板。自所得 固化物件切割具有合適大小及矩形形狀之厚片且接著以異 丙醇對其進行沖洗1藉由氮氣吹掃使其乾燥。使用特別設 计之台來將PDMS機械延伸至所要程度的應變。經由置放 為與PDMS接觸之UV0遮罩使此等經延伸之基板受到短波 長uv光（低壓汞燈，BHK，自24〇至26〇請為⑺肩铺2) 的照射歷時5分鐘產生經圖案化之表面化學。 彎曲GaAs織帶之形成及嵌入··相對於具有經圖案化之 表面化學的延伸之!>0“8層壓具有塗佈有ΜΑ之經釋放之 織帶的GaAs晶圓。在烘箱中於9〇。〇下烘焙5分鐘，在空氣 124395.doc -42- 200836353 中冷卻至室溫且接著缓慢鬆弛PDMS中之應變沿每一織帶 產生彎曲。嵌入彎曲織帶涉及泛光曝露於UV光下5分鐘且 接著將液態PDMS預聚物澆鑄至〜4 mm之厚度。將樣本在 烘箱中於65°C下固化4小時或在室溫下固化36小時使得預 聚物固化來使彎曲織帶嵌入於PDMS之固體基質中。 彎曲織帶之表徵：藉由使樣本傾斜〜90。(對於非嵌入之 樣本）或〜30° (對於嵌入之樣本）而以光學顯微鏡對織帶進 行成像。在以較薄金層（厚度為〜5 nm)塗佈樣本之後將SEM • 影像記錄於Philips XL30場發射掃描電子顯微鏡上。使用 用於預延伸PDMS印模之同一台來延伸及壓縮所得樣本。 SMS PD之製造及表徵：PD之製造始於採取圖24B之底 部圖框中所示之組態的樣本。輕柔地將〜0.8 mm寬之聚對 苯二甲酸乙二酯（PET)薄片的條帶置放於PDMS上，其中條 帶之縱軸與織帶之縱軸垂直。此條帶充當對於30 nm厚之 金膜之電子束蒸鍍（以形成肖特基電極）的蔽蔭遮罩。移除 PET條帶且鬆弛預延伸之PDMS印模形成建有彎曲GaAs織 ® 帶之SMS PD。將液態PDMS預聚物澆鑄至織帶之無電極的 區域上，且接著於烘箱中固化。金電極延伸越過頂部 PDMS以致能藉由半導體參數分析器而進行之探測。 (Agilent 4155C)。在對光回應之量測中，藉由使用用於延 伸及壓縮之機械台來控制PD。IR LED源（具有850 nm之波 長）提供照射。 實例2 :轉印： 吾人之技術方法使用體現於先前描述之基於平坦印模的 124395.doc -43- 200836353 印刷方法中之某些思想。雖然此等基本技術提供有前途之 起點但如下文所述，必須引入許多根本上的新特徵來滿 足用於成像之半球陣列偵測器（HemispheHeai沿心 Detector for lmaging，HARm)系統之挑戰。 圖32及圖33說明與向彎曲表面之轉印相關之總策略。步 驟之第一集合（圖32)涉及經設計以將互連之以CM〇s "小 晶片（chiplet)”自晶圓之平坦表面起離且接著將幾何形狀變 換為半球形狀之較薄球面彎曲彈性體印模的製造及控制。 猎由抵靠經選擇具有所要曲率半徑之高品質光學元件（亦 =，凸透鏡與凹透鏡之配對）澆鑄並固化液態預聚物以獲 得諸如聚二甲基石夕氧烧（PDMS)之彈性體而形成用於此製 程之印模。印模具有模製之圓形輪緣。藉由使此輪緣上之 模製槽（圖32中之虛線圓）配合至適當大小之岡生圓形固持 環而徑向延伸此元件將此球形印模變換為延伸之平坦薄 片。使此延伸之印模與支撐具有較薄互連之預成型且經底 切蝕刻之Si CMOS ”小晶片”的母晶圓接觸且接著剝離該印 核以此等互連之”小晶片”對此元件,,塗墨”。小晶片與柔軟 彈性體tl件之間的凡得瓦爾相互作用（Van interaction)對此製程提供充分黏著。 移除固持環使得PDMS鬆弛回其初始半球形狀，藉此實 現小晶片陣列的平坦至球形之變換。此變換誘發印模之表 面處的壓縮應變。藉由互連之局部分層及提昇而在cm〇s 小晶片陣列中適應此等應變（圖32之左下部）。此等，，上推，， 互連以避免對小晶片之損害及其電特性之有害的應變誘發 124395.doc -44- 200836353 之改變之方式來吸收應變。將小晶片中之應變保持於 〜〇·ι%以下實現此等兩個目標。互連所需之空間限制 CMOS小晶片之最大填充因數。然而，光偵測器消耗幾乎 全部像素面積，由此提供達到80%之填充因數目標的簡單 途徑。Fabrication of Si webbing: The Si-Yi webbing was fabricated from a silicon-on-insulator (SOI) wafer (Soitect, Inc., top xi 290 nm, buried oxide 400 nm, p-type). The wafer was patterned by conventional photolithography using an AZ 5214 photoresist and etched by SF6 plasma (Plasma Therm RIE, SF6 40 seem, 50 mTorr, 100 W). After the photoresist was washed with acetone 124395.doc •41-200836353, the oxide layer was then buried in the HF (49%). Manufacture of UVO masks. Clean the fused silica slides in piranha solution s〇iuti〇n) (wash out on 6 (rc) for 15 minutes and rinse thoroughly with sufficient water. Dry by nitrogen purge. The slide was placed in a chamber of an electron beam vaporizer to be coated by a continuous layer of 5 nm 2 Ti (as an adhesive layer) and 100 nm An (a mask layer for sUV light). A negative photoresist (ie, SU8 5) was spin cast onto the slide at 3000 rpm for 30 seconds to produce a film of ~5 μιη thick. Soft baking, exposure to light, post-baking and development in the photoresist The pattern is generated. The mild 〇2 plasma (that is, the slag removal process) removes the residual photoresist. The photoresist acts as a mask to separate the gold etchant (ie, the aqueous solution of ^ and 〇) and Titanium etchant (also known as 'diluted solution of HC1) for the remainder au and butyl 1. Preparation of PDMS impression: by pouring the prepolymer (A: B = 1:10, Sylgard 184, Dow Corning) into the skin The Petri dish was relayed at 65. The crucible was baked for 4 hours to prepare a pDMs substrate having a thickness of ~4 mm. A slab of size and rectangular shape and then rinsed with isopropyl alcohol 1 is dried by a nitrogen purge. A specially designed stage is used to mechanically extend the PDMS to the desired degree of strain. The exposed UV0 mask causes these extended substrates to be subjected to short-wavelength uv light (low pressure mercury lamps, BHK, from 24 to 26, (7) shoulder 2) to produce patterned surface chemistry for 5 minutes. Formation and Embedding of Curved GaAs Ribbons · With respect to Extensions with Patterned Surface Chemistry!>0"8 Laminated GaAs wafers with enamel-released webbing. In an oven at 9〇 Baking for 5 minutes under the arm, cooling to room temperature in air 124395.doc -42-200836353 and then slowly relaxing the strain in the PDMS to produce a bend along each webbing. The embedded curved webbing involves flood exposure to UV light for 5 minutes and The liquid PDMS prepolymer was then cast to a thickness of ~4 mm. The sample was cured in an oven at 65 °C for 4 hours or at room temperature for 36 hours to cure the prepolymer to embed the curved webbing into the solid of PDMS. In the matrix. Table of curved webbing : Imaging the webbing with an optical microscope by tilting the sample to ~90 (for non-embedded samples) or ~30° (for embedded samples). Coating with a thinner gold layer (thickness ~5 nm) After the sample, the SEM image was recorded on a Philips XL30 field emission scanning electron microscope. The same sample was used to pre-extend the PDMS impression to extend and compress the resulting sample. Fabrication and Characterization of SMS PD: The fabrication of PD began with Figure 24B. The configured sample shown in the bottom frame. A strip of polyethylene terephthalate (PET) sheet of ~0.8 mm width was gently placed on the PDMS with the longitudinal axis of the strip perpendicular to the longitudinal axis of the webbing. This strip acts as a shadow mask for electron beam evaporation (to form a Schottky electrode) for a 30 nm thick gold film. The PET strip, which removes the PET strip and relaxes the pre-stretch, forms an SMS PD with a curved GaAs weave. The liquid PDMS prepolymer was cast onto the electrodeless areas of the webbing and then cured in an oven. The gold electrode extends across the top PDMS to enable detection by a semiconductor parameter analyzer. (Agilent 4155C). In the measurement of the response to light, the PD is controlled by using a mechanical table for extension and compression. The IR LED source (with a wavelength of 850 nm) provides illumination. Example 2: Transfer: Our technical method uses some of the ideas embodied in the previously described flat impression based 124395.doc -43-200836353 printing method. While these basic techniques provide a promising starting point, as described below, many fundamental new features must be introduced to meet the challenges of the HemispheHeai Detector for lmaging (HARm) system. Figures 32 and 33 illustrate the overall strategy associated with transfer to a curved surface. The first set of steps (Fig. 32) relates to a thinner sphere designed to detach the interconnected CM〇s "chiplets" from the flat surface of the wafer and then transform the geometry into a hemispherical shape Fabrication and control of curved elastomeric impressions. Hunting is performed by casting and curing a liquid prepolymer against a high quality optical element (also = pair of convex and concave lenses) selected to have a desired radius of curvature to obtain, for example, polydimethyl stone. The elastomer of the epoxidized (PDMS) forms a stamp for the process. The stamp has a molded round rim. By fitting the molding groove on the rim (the dotted circle in Fig. 32) Radially extending the element to a suitably sized rounded retaining ring to transform the spherical stamp into an extended flat sheet. The extended stamp and support have a thinner interconnected preform and undercut etched The mother wafer of the Si CMOS "small wafer" contacts and then strips the core to interconnect the "small wafer" for this component, inked. The Van interaction between the small wafer and the soft elastomer tl piece provides sufficient adhesion to the process. Removing the retaining ring causes the PDMS to relax back to its original hemispherical shape, thereby achieving a flat to spherical transition of the small wafer array. This transformation induces compressive strain at the surface of the stamp. These strains are accommodated in the cm〇s small wafer array by local layering and lifting of the interconnect (lower left in Figure 32). These, push-up, and interconnections avoid damage to the small wafer and its harmful electrical strain induced by the strain induced 124395.doc-44-200836353 to absorb strain. These two objectives are achieved by keeping the strain in the small wafer below ~〇·ι%. The space required for interconnection limits the maximum fill factor of CMOS small wafers. However, photodetectors consume almost all of the pixel area, thereby providing an easy way to achieve an 80% fill factor goal.

在步驟之第二集合（圖33)中，使用經”塗墨，，之半球印模 來將此等元件轉印至具有匹配形狀之空腔的最終設備基板 (例如，在此實例中為具有匹配半$求狀空腔之玻璃基板） 上。此轉移製程使用諸如光可固化BCB(Dow Chemicai)或 聚胺基甲酸酯（Norland Optical Adhesive)之紫外（uv)固化 光聚合物作為黏著劑。將此等材料以薄（數十微米厚）液態 膜之形式塗覆至設備基I在與㈣接觸之後，此液態層 即流動以符合與小晶片及上推互連相關聯之起伏結構。‘ 過透明基板之UV光使光聚合物固化且將其變換為固體形 式以在移除印模之後即產生平滑、平面化之頂部表面。用 以形成功能系統之最終整合涉及電極及光偵測器材料之沈 積及圖案化，及匯流排線至外部控制電路之微影界定。 圖32及圖33之方法具有若干顯著特徵。第一，其利用最 新平面電子技術來致能對半球基板之可靠、節省成本及高 效月色的才呆作〇牲定士夕 Ϊ曰U 1 特疋。之小日日片由以〇·13 μπι之設計規則 加以處理之矽電晶體之集合組成來得到系統之局部 像素、、及處理能力。纟用習知處理連同絕緣體上⑧晶圓以形 成此等設備。内埋氧化物提供犧牲層（藉由hf而進行底切 餘刻）來製備用於印刷之小晶片。互連由窄且薄（〜100 nm) 124395.doc •45· 200836353 之金屬線組成。 第二特徵在於該方法使用彈性體元件及機械設計以致能 平面向半球之受到良好控制的變換。轉移印模及綜合機械 模型化中之可逆線性力學如隨後所概括而實現此控制。第 =個有吸引力之態樣在於，轉移製程及策略之用以控制黏 著之某些基本組件在平面應用中已得到論證。實際上，已 經設計以用於彼等平面印刷應用之台可經調適以用於圖32 及圖33之製程。圖34展示適用於此製程中的具有整合式視 ® 覺系統及氣壓致動器之自製印刷器。 使用此等類型之印刷器系統來論證圖32及圖33之製程的 若干態樣。圖35展示以單晶矽島狀物之陣列而”塗墨”之半 球印模之表面的掃描電子顯微相片影像，該等單晶矽島狀 物在正方陣列中藉由重摻雜之矽織帶而互連。圖％展示光 學影像。在平面至球形之變換期間，此等織帶互連以圖^ 中所描緣之方式上推。此等類型之互連之關鍵態樣在於， •當=完全成形之小晶片的轉移組合時，其減小對於高解析 度弓曲表面微影或直接對半球進行之其他形式之處理的需 要。 除了材料及總處理策略以外，執行對半球印模、上推互 連及與剛性設備島狀物之相互作用的彈性機械回應之全計 f模型化。此料算以促進設計控制及最佳化之水準顯示 裝私之物理現象。基於線性彈性板理論之簡單估計暗示與 圖32之製程相關聯的應變水準對於2細厚之印模及半徑為 1cm之球面可達到10%或更高。因此，為了可靠設計控 124395.doc -46 - 200836353 制，對於高達此值之兩倍（亦即，〜2〇%)的應變在線性彈性 狀悲中操作印模為必要的。圖37展示PDMS之若干變體之 實驗應力/應變曲線，關於該等變體，吾人在基於塊狀平 土-印杈之印刷的水準上具有經驗。i84-pDMs看來似乎提 供良好初始材料，因為其提供高達〜40%之應變的高線性 及彈性回應。 諸如此等之機械量測連同關於小晶片及織帶上推互連之 模數及幾何形狀的文獻值提供對於模型化為必要之資訊。 h用兩種#异方法。第_者為滿標度有限元模型化伽如 element mQdehng，FEM)，在其中分析平坦基板上之設備 及互連幾何形狀(例如，大小、間距、多層)的細節。在分 析：直接考慮不同材料(例如，印模、矽、互連)。外加側 向1力W使印柄及電路變形為所要球形形狀。有限元分析 $應又；7布（尤其是設備及互連中之最大應變）及經變換 ^又備之間的不均勾間距。該方法之優勢在於其俘獲設備 幾何形狀及材料之所有細節，且因此可用以探察轉印製程 =同設：的效果以減小最大應變及不均勻性。然而，此 =异密集的且因此耗費時間，因為其涉及較廣範圍 :又不度及對印模上之大量結構設備之模型化。 等==設備(小晶片)之單胞模型，該模型分析該 示，且直力、m之機械效能。每一設備藉由-單胞表 π元方去機械負載下之回應（例如，撓曲及張力）經由有 ::Γ::到徹底研究。接著藉由以互連連接之單胞來 ·--備。接著將此單胞模型併入至有限元分析中以 124395.doc -47- 200836353 替代對設備及互連之詳細模型化。此外，在遠離球面之邊 緣處，應變相對均勻以使得許多單胞可經整合且其效能可 由粗略水準之模型表示。在接近球面邊緣處，應變高度不 均勾’使得對設備之詳細模型化仍為必要的。該方法之優 勢在於其顯著減少計算量。使用第一種方法中之滿標度有 限元模型化來驗證此單胞模型。一旦經驗證，單胞模型即 提供強有力之設計工具，因為其適用於對設備、互連及其 間距的不同設計之快速探察。 圖38呈現關於如圖32所概括，料球印模延伸為平坦幾 何形狀（且將其鬆弛回至其半球形狀）的初步fem結果。頂 部圖框展示具有如同圖32中所示意性說明之幾何形狀的幾 何形狀之半球印模之橫截面圖。此等結果展示延伸薄膜之 應fe中的如由其不均勻厚度所顯見之微小空間不均勻性。 經由適當選擇藉由繞鑄及固化而形成印模時所抵靠之結構 來對印模之厚度輪廓進行涉及可消除此等不均勻性=然 而，值得注意的是，一些不均勻應變為可接受的，因為⑴ 上推互連固有地容許扭曲，且（ii)小晶片無需在每一像素 位置處完全居中；較大光偵測器將以均勻背面電極填充像 素區，該背面電極可獨立於小晶片在像素區内的位置而建 立至其之電接觸。 杈型化亦可判定Si CMOS小晶片中應變之水準。系統鹿 經設計以將此等小晶片應變保持於〜〇1%至〇2%以下來: 免電特性之改變及（可能地）歸因於斷裂或分層之機械失 效。此模型化促進對印模及處理條件之設計以避免小晶片 124395.doc -48- 200836353 曝露於在此範圍以上的應變。 實例3 :雙軸可延伸”波狀"石夕奈米薄膜 此只例引入雙軸可延伸形式之單晶矽，其由彈性體支撐 物上之二維彎曲或"波狀"石夕奈米薄膜組成。描述用於此等 結構之製造程序，且呈現該等結構之幾何形狀之各種態樣 及對於沿各個方向之單軸及雙軸應變的回應。此等系統之 力學分析模型提供用於定量理解該等系統之行為之構架。 此等類別之材料提供得到具有充分的二維可延伸性之高效 W 能電子元件之途徑。 提供機械可撓曲性之電子元件對於資訊顯示器、X射線 成像光伏打設備及其他系統中之應用為所關注的。可逆可 延伸性為-不同且更具技術挑戰性之機械特徵，其將致能 無法藉由諸如智慧型外科手套、電子眼攝影機及個人保健 監視器之僅可撓曲之電子元件實現的設備可能性。在得到 此類型之電子元件之一方法中，可延伸導線使剛性設備島 狀4勿互連以對於不可延伸之設備組件提供電路級可延伸 性。在替代朿略中，某些結構形式之薄單晶半導體及其他 電子材料允許設備自身之可延伸性。近來之論證涉及在石夕 及珅化鎵之奈米織帶（厚度在數十與數百奈米之間且寬度 在微米範圍内）中使用f曲一維"波狀"幾何形狀以在金屬氧 化物半導體場效電晶體（M0SFET)、金屬半導體場效電晶 體（MESFET)、pn接合二極體及宵特基電極中達成單抽可 延伸性。此實例展示類似材料之奈米薄膜可成形為二維 (2D)波狀幾何形狀以提供充分的2〇可延伸性。描述該等系 124395.doc -49- 200836353 統之製造程序連同對該等系統之機械回應的詳細實驗表徵 及分析模型化。 圖39示意性地說明用於在彈性體支撐物上形成二維可延 伸Si奈米薄膜之步驟。對於此實例，由絕緣體上矽（SOI)晶 圓（Soitec，Inc.，p型）製造此等薄膜，其始於藉由以光微影 界定光阻劑之合適圖案且接著以反應性離子蝕刻（Plasma Therm RIE，SF6 40 seem，50毫托，100 W)移除曝露之秒 而形成頂部石夕中之孔洞（〜2· 5 μπι之直徑及〜25 μπι之間距）之 # 正方陣列。此相同步驟界定薄膜之整體橫向尺寸，該尺寸 對於此處報告之樣本處於3-5平方毫米之範圍内。厚度處 於55 nm與320 nm之間。將經蝕刻之樣本浸沒於濃縮氫氟 酸（HF 49%)中移除Si02内埋層（145至1000 nm厚）；在丙酮 中清洗移除光阻劑。抵靠經研磨之矽晶圓澆鑄並固化聚二 甲基矽氧烷（PDMS)之預聚物產生平坦彈性體基板（〜4 mm 厚）。曝露於藉由強烈紫外光（240-260 nm)形成之臭氧環境 中5分鐘將疏水性PDMS表面（-CH3及-H端基）轉換為親水性 ® 狀態（-OH及-O-Si-O端基）。在對流烘箱中於70至180°C下 暫時加熱該活性PDMS基板誘發受控程度之各向同性熱膨 脹。使此元件與經處理之SOI晶圓接觸且接著再次將其剝 離將整個奈米薄膜轉移至PDMS。對流烘箱中歷時數分鐘 之繼續加熱促進薄膜與PDMS之間強黏著結合之形成。在 最後步驟中，將奈米薄膜/PDMS結構i冷卻至室温（約25°C) 以釋放熱誘發之預加應變（AL/L)。此製程導致Si奈米薄膜 及PDMS之附近表面區域中的二維（2D)波狀結構之起伏之 124395.doc -50- 200836353 自發形成。此等結構在一維週 鎊卢、画心 匁，射生波起主要作用之接近邊 ^ ^ ^ ^ „ 布局之内部區域中及無序魚 月狀、衾口構經吊發生的接近中央盧一 F祕“奸“ 央處顯不出不同狀態。魚骨狀 ^以波紋中鄰近峰之間的距離(吾人稱作短波長”、波紋 之振幅Al(圖1中未展示)及與魚骨狀結構中之鄰近"凹凸"之 間的間隔相關聯之較長距離2議2(沿&方向）(吾人稱作長 波長)為特徵。其他特徵長度為"凹凸”波長2叫沿&方In a second set of steps (Fig. 33), an "ink", hemispherical impression is used to transfer the elements to a final device substrate having a matching shaped cavity (e.g., in this example Matching a glass substrate with a half-dimensional cavity. This transfer process uses an ultraviolet (uv) curing photopolymer such as photocurable BCB (Dow Chemicai) or Norland Optical Adhesive as an adhesive. These materials are applied to the device base I in the form of a thin (tens of microns thick) liquid film. After contact with (iv), the liquid layer flows to conform to the relief structure associated with the small wafer and the push-up interconnect. UV light passing through the transparent substrate cures the photopolymer and transforms it into a solid form to produce a smooth, planarized top surface after removal of the stamp. The final integration to form the functional system involves electrode and photodetection The deposition and patterning of the material, and the lithography of the busbar to the external control circuit. The methods of Figures 32 and 33 have several salient features. First, they utilize the latest planar electronics to enable the hemispherical substrate. Reliable, cost-effective, and efficient moonlight are the best things to do. The small Japanese film is made up of a collection of 矽-transistors processed with 设计·13 μπι design rules. Partial pixels, and processing power of the system. The conventional processing is performed together with 8 wafers on the insulator to form such devices. The buried oxide provides a sacrificial layer (undercutting by hf) to prepare for printing Small wafer. The interconnect consists of a narrow and thin (~100 nm) wire of 124395.doc •45·200836353. The second feature is that the method uses elastomeric components and mechanical design to enable well-controlled planar hemispheres. Transformation. The reversible linear mechanics in transfer impressions and integrated mechanical modeling are implemented as outlined below. The first attractive aspect is that the transfer process and strategy are used to control some of the basic components of adhesion. It has been demonstrated in planar applications. In fact, the stations that have been designed for their planar printing applications can be adapted for use in the processes of Figures 32 and 33. Figure 34 shows that it is suitable for use in this process. Self-contained printers for integrated vision systems and pneumatic actuators. These types of printer systems are used to demonstrate several aspects of the process of Figures 32 and 33. Figure 35 shows an array of single crystal islands. Scanning electron micrograph images of the surface of the "ink-coated" hemispherical impression are interconnected in a square array by heavily doped woven ribbons. Figure % shows an optical image. During the transition from plane to sphere, these webbing interconnections are pushed up in the manner described in Figure 2. The key aspects of these types of interconnects are: • When = a fully formed small wafer transfer combination, Reduce the need for high-resolution bow surface lithography or other forms of processing directly on the hemisphere. In addition to materials and overall processing strategies, perform hemispherical impressions, push-up interconnections, and islands with rigid equipment. The interaction of the elastic mechanical response is fully modeled. This is a physical phenomenon that shows the degree of design control and optimization. A simple estimate based on the linear elastic plate theory implies that the strain level associated with the process of Figure 32 can be 10% or more for a 2 thick stamp and a spherical surface having a radius of 1 cm. Therefore, in order to reliably design control 124395.doc -46 - 200836353, it is necessary to operate the stamp in linear elastic sorrow for strains up to twice this value (ie, ~2〇%). Figure 37 shows experimental stress/strain curves for several variants of PDMS with respect to which we have experience in the level of printing based on block-like printing. The i84-pDMs appear to provide good starting materials because they provide high linearity and elastic response up to ~40% strain. Mechanical measurements such as these, along with literature values for the modulus and geometry of the small wafer and webbing push-up interconnects, provide the information necessary for modeling. h uses two different methods. The first is a full-scale finite element modeling gamma element mQdehng, FEM), in which the details of the device and interconnect geometry (eg, size, spacing, multilayer) on a flat substrate are analyzed. In the analysis: directly consider different materials (for example, impressions, defects, interconnections). The lateral force 1 is applied to deform the stamp and the circuit into a desired spherical shape. Finite element analysis $ should be; 7 cloth (especially the maximum strain in equipment and interconnection) and the uneven spacing between the transformed and the prepared. The advantage of this method is that it captures all the details of the device geometry and material, and thus can be used to explore the effects of transfer process = co-design: to minimize maximum strain and non-uniformity. However, this is heterogeneous and therefore time consuming because it involves a wide range: inferior and modeling of the large number of structural devices on the stamp. The unit cell of the == device (small wafer), the model analyzes the indication, and the mechanical force of the direct force, m. Each device responds to the mechanical load (eg, flexure and tension) by the -cell table π element via a ::Γ:: to thorough study. Then, by unit cells connected by interconnections. This unit cell model is then incorporated into the finite element analysis to replace the detailed modeling of the device and interconnection with 124395.doc -47-200836353. Moreover, at the edge away from the sphere, the strain is relatively uniform so that many unit cells can be integrated and their performance can be represented by a roughly level model. At near the edge of the sphere, the strain height is not uniform, making detailed modeling of the equipment still necessary. The advantage of this approach is that it significantly reduces the amount of computation. The unit cell model is validated using the full scale finite element modeling in the first method. Once validated, the unit cell model provides a powerful design tool because it is suitable for rapid exploration of different designs of devices, interconnects, and their spacing. Figure 38 presents preliminary fem results for a ball die extending into a flat geometric shape (and relaxing it back to its hemispherical shape) as summarized in Figure 32. The top panel shows a cross-sectional view of a hemispherical impression having a geometric shape as illustrated in Fig. 32. These results show the small spatial inhomogeneities in the stretched film as seen by its uneven thickness. Involving the thickness profile of the stamp by appropriately selecting the structure against which the stamp is formed by casting and curing can eliminate such inhomogeneities = however, it is worth noting that some uneven strain is acceptable Because (1) the push-up interconnect inherently allows for distortion, and (ii) the small wafer does not need to be fully centered at each pixel location; the larger photodetector will fill the pixel region with a uniform back electrode that can be independent of The location of the small wafer within the pixel region establishes electrical contact thereto. The 杈 type can also determine the level of strain in the Si CMOS small wafer. The system deer is designed to maintain strain on these small wafers from ~〇1% to less than 2%: changes in electrical-free characteristics and (possibly) mechanical failure due to fracture or delamination. This modeling facilitates the design of the stamp and processing conditions to avoid exposure of the small wafer 124395.doc -48- 200836353 to strains above this range. Example 3: Biaxially extensible "wavy" "stone" film This example introduces a biaxially extensible form of a single crystal crucible that is two-dimensionally curved or "wavy" on an elastomeric support. Circumference film composition. Describe the fabrication procedures for such structures, and present various aspects of the geometry of the structures and responses to uniaxial and biaxial strains in various directions. Mechanical analysis models of such systems Provides a framework for quantitative understanding of the behavior of such systems. Materials in these categories provide access to efficient W-energy electronic components with sufficient two-dimensional extensibility. Electronic components that provide mechanical flexibility for information displays, Applications in X-ray imaging photovoltaic devices and other systems are of interest. Reversible extensibility is a different and more technically challenging mechanical feature that will not be able to be achieved by, for example, smart surgical gloves, electronic eye cameras and Device possibilities for flexible electronic components of personal health monitors. In one of the methods of obtaining electronic components of this type, extendable wires enable rigid devices 4 is not interconnected to provide circuit level extensibility for non-extendable device components. In alternative strategies, thin crystalline single crystal semiconductors and other electronic materials of certain constructions allow for the extensibility of the device itself. Recent arguments involve Use f-one-dimensional "wave-like" geometry in metal oxide semiconductors in Shixi and gallium nitride ribbons (thickness between tens and hundreds of nanometers and width in the micrometer range) Single-effect extensibility is achieved in field effect transistor (M0SFET), metal semiconductor field effect transistor (MESFET), pn junction diode and 宵-tep electrode. This example shows that nano film of similar material can be formed into two dimensions. (2D) wavy geometry to provide sufficient 2 〇 extensibility. Describe the manufacturing procedures of these systems 124395.doc -49- 200836353 together with detailed experimental characterization and analytical modeling of the mechanical response of the systems. 39 schematically illustrates the step of forming a two-dimensional extensible Si nanofilm on an elastomeric support. For this example, this is fabricated from a silicon-on-insulator (SOI) wafer (Soitec, Inc., p-type). thin Starting from the appropriate pattern of the photoresist defined by photolithography and then removing the exposure seconds by reactive ion etching (Plasma Therm RIE, SF6 40 seem, 50 mTorr, 100 W) to form the top of the stone The square of the hole (~2·5 μπι diameter and ~25 μπι). This same step defines the overall lateral dimension of the film, which is within the range of 3-5 square millimeters for the sample reported here. The thickness is between 55 nm and 320 nm. The etched sample is immersed in concentrated hydrofluoric acid (HF 49%) to remove the SiO2 buried layer (145 to 1000 nm thick); the photoresist is removed by cleaning in acetone. Agent. A pre-polymer of polydimethylsiloxane (PDMS) was cast and cured against a ground germanium wafer to produce a flat elastomer substrate (~4 mm thick). Exposure to hydrophobic PDMS surface (-CH3 and -H end groups) to hydrophilicity state (-OH and -O-Si-O) exposed to an ozone environment formed by intense ultraviolet light (240-260 nm) for 5 minutes End base). Temporary heating of the active PDMS substrate at 70 to 180 °C in a convection oven induced a controlled degree of isotropic thermal expansion. This element was brought into contact with the treated SOI wafer and then peeled off again to transfer the entire nanofilm to PDMS. Continued heating in the convection oven for a few minutes promotes the formation of a strong bond between the film and the PDMS. In the final step, the nanofilm/PDMS structure i is cooled to room temperature (about 25 ° C) to release the heat-induced pre-strain (AL/L). This process spontaneously forms the undulation of the two-dimensional (2D) wavy structure in the vicinity of the surface area of the Si nanofilm and PDMS. These structures are in the first dimension of the week, and the heart is drawn, and the main effect of the shooting wave is close to the edge ^ ^ ^ ^ „ The inner part of the layout and the disordered fish-shaped, the mouth of the mouth is close to the central Lu A F secret "sex" can not show different states. The fish bone shape is the distance between adjacent peaks in the corrugation (we call it short wavelength), the amplitude of the corrugation Al (not shown in Figure 1), and the fishbone shape The longer distance between the adjacent "convex" in the structure is related to the longer distance 2 (in the & direction) (which I call the long wavelength). The other features are of the length of the "convex" wavelength 2 & party

向’與長波長方向Χ2垂直）、凹凸之振幅Α2、凹凸角β。圖 3 9之底部圖框示意性地說明此等特徵。 圖4〇之部分a_f展示對於具有100nm之厚度（約⑽麵2 之橫向尺寸）及〜道之熱預加應變（藉由加熱至15代而界 定)的奈米薄膜，於魚骨狀波紋之形成期間之不同階段收 集的光學顯微相片。此等影像指示兩階段之結構形成，該 等P白&中之第-者涉及在較大區上起主要作用之—維波紋 :之以撓曲此等波紋結構以最終在完全冷卻時形成緊密魚 骨狀布局（圖40 d-f)。圖40h展示兩個特徵波長之時間演 進。短波長傾向於隨著冷卻導致矽上的逐漸較大之壓縮應 變（歸因於PDMS之相對較大之熱收縮）而減小。特定言 之此值自初始階段中之17至18 μιη降至魚骨狀結構變得 突出時之〜14.7 μπι，且最終在完全冷卻之狀態下降至〜127The angle Α2 perpendicular to the long wavelength direction, the amplitude 凹凸2 of the unevenness, and the uneven angle β. The bottom panel of Figure 39 schematically illustrates these features. Part a_f of Figure 4 shows a nanofilm with a thickness of 100 nm (a lateral dimension of about (10) face 2) and a thermal pre-stress of the channel (defined by heating to 15 generations). Optical micrographs collected at different stages during the formation. These images indicate the formation of a two-stage structure, the first of which involves a major role in the larger area - the corrugation: to deflect the corrugated structure to eventually form upon complete cooling. Close fishbone layout (Fig. 40 df). Figure 40h shows the time progression of the two characteristic wavelengths. The short wavelength tends to decrease with the gradual larger compression strain on the crucible due to cooling (due to the relatively large heat shrinkage of the PDMS). Specifically, this value drops from 17 to 18 μηη in the initial stage to ~14.7 μπι when the fishbone structure becomes prominent, and eventually drops to ~127 in the state of complete cooling.

Km。此波長在較大區上為均勻的（〜5%之變化）。相反地， 如自圖40g中之影像所顯而易見的，與魚骨狀布局相關聯 之長波長顯示出寬廣範圍之值。在跨越此樣本之〜i⑽個點 處之量測得到值之分布，其概述於圖4〇g之直方圖中。可 124395.doc -51- 200836353 由面外位移w=AlCOS[klXl+kl A2COS(k2X2)]表示魚骨狀結構 (圖49)。此處，係數：波紋之振幅&、長波長2兀/匕、凹凸 波長2 π/k!及凹凸之振幅八2藉由對特定薄膜厚度、膜的機 械特性及基板之分析而判定。短波長人為（2 π/1^)δίη(Θ/2)。 模型化使用如由量測而得之等同長度及波狀結構之週期而 判定的Si應變替代熱預加應變來作為施加之預加應變（圖 5〇) °使Si變形之實際應變可能歸因於之負载 效應而通常稍小於估計之熱預加應變。舉例而言，si應變 •在3·8ϋ/❻之熱預加應變下為2·4%。對於該位移w，Si膜中之 應力、應變及位移場可在Ai、ki、心及匕之方面自馮卡門 板理淪（Von Karman plate theory)獲得。自3D彈性理論獲 得PDMS基板中之場。最小化由以膜中之薄膜能量及撓曲 月& 1及PDMS基板中之彈性能量組成之總能量給出A!、 h、A!及h。Si及PDMS之揚氏模數及柏松比為心=13〇 GPa vSl 〇·27、EpDMS—1·8 MPa且 vpdms=〇.5。實驗與模型 _ 均給出凹凸角Θ為約90。。理論給出之短波長在2·4%之雙軸 預加應變下為12·4 μηι，此與以上之實驗結果良好地符 合。長波長2 π/k2之較大變化亦由理論計算所預測 4 卡Γ 為 30至 60 μηι。 圖41呈現類似於圖40之完全冷卻狀態所說明之結構的鈐 構之原子力顯微鏡（at〇mic force microscope，AFM)及掃_ 電子顯微鏡（SEM)影像。此等影像清楚地展示，魚骨狀苎 案以鋸齒狀結構為特徵，該等結構界定兩個特徵性方向， 即使屢縮應餐:完全為各向同性亦如此。魚骨狀結構表一田 124395.doc -52- 200836353 2 =量組態，其減小系統中之總平面内應力且減輕兩 個方向上之雙軸I縮。因此，此幾何形狀相較於"棋盤形" 紋布局而言在較大區上為較佳的，因為魚骨狀模式 為此：二個模式中在所有方向上使平面内應力鬆弛而不誘 、、貝著延伸▲ 1之唯——者。僅在緊接凹凸處誘發顯著延 伸。1D模式僅在—财向上使預加應力降低 ，所有方向上降低應力，但其產生伴隨挽曲之顯著延= 量0 自AFM影像提取之兩個線切圖指示沿凹凸方向（輪廊i)及 垂直於波紋（輪廓ii)的週期性（但僅近似正弦）之起伏輪廓。 波紋之由輪廓ii判定之人及、分別為12·8 μηι及〇·66 。由 理論分析給出之為12·4 μηΐ2λ類似於實驗資料；然而，得 自理論分析的八】為〇·90 μπι，其為稍高於實驗結果之值。 SEM影像清楚地展示如由在波紋之凸起及凹入區域中接近 矽中之小孔洞的樣本之狀態所顯見之薄膜與pDMs之間的 密切結合。此等影像亦指示波紋結構與此等孔洞之位置完 王不相關，因為2.5 μιη之孔洞大小遠小於吾人之實驗中的 變形模式之特徵性波長。對於波狀結構之幾何形狀對碎之 厚度之依賴性的研究可提供對物理現象之額外理解且進一 步驗證力學模型。圖42展示一些結果，包括對於類似熱應 變以不同厚度形成於薄膜中之波紋結構的光學顯微相片以 及波長與振幅。對於100 nm之厚度，波紋之人及、分別為 12.6( 土 0.37) μηι 及 〇·64( 土 〇·〇7) μηι，且對於 320 nm 之厚度， 其為45.1(士 1·06) μπι及1.95(土0.18) μπι。此等值相當良好地 I24395.doc -53· 200836353 對應於理論計算，該等理論計算得到九及、對於1〇〇 nm2 情況為12·4 μιη及0.90 μηι且對於32〇 nm之情況分別為451 μηι及 3 ·29 μηι 〇 此等波狀濤膜k供各個平面内方向上之對於應變的真實 可延伸性，此與藉由先前描述之織帶幾何形狀所提供之一 維可延伸性形成對比。$ 了研究此態樣，吾人藉由使用經 杈準機械台及以熱誘發之3.8%的預加應變而製備之2D可延 伸薄膜執行沿不同方向之單軸抗張延伸測試。圖43提供一 塹衫像。在情況i中，沿長波紋之方向施加之拉伸應變 使得魚骨狀結構”展開”（〜為ι8%)，逐漸導致完全延伸狀 態（8“為3.8%)下的1D波狀幾何形狀。此延伸藉由柏松效應 而在正交方向上誘發具有粗略等於拉伸應變之一半的振幅 之壓縮應變。可藉由在此方向上壓縮波狀結構而適應此壓 縮應k。在解除所施加之拉伸應變之後，原始魚骨狀波紋 即恢復而顯示出與最初相當類似之結構。（圖5丨展示在$、 1〇、15個延伸循環之後收集之光學顯微相片）。 在對角方向上施加之拉伸應變（情況u)展示類似結構改 憂但在70全延伸時’ 1D波紋結構沿由施加之應變所界定 之方向對準而非為初始幾何形狀。對於垂直情況m，在較 小應變（8“為1，8%)處，樣本之某些部分完全失去魚骨狀布 局而沿延伸方向產生新的1D波紋。隨著增加之應變，較多 區域經歷此變換直至整個區由此等定向之1〇波紋組成。此 等新形成之1D波紋垂直於原始波紋之定向；在解除之後， 其即簡單地撓曲以形成無序魚骨狀幾何形狀。對於圖43b 124395.doc -54- 200836353 中所示之全部情況，波長均隨拉伸應變而增大且在解除之 後即恢復至其原始值，即使在正交方向上由柏松效應誘發 壓縮應力亦如此。此行為由於由魚骨狀波紋之展開所誘發 的λ之增大而產生，該增大大於由柏松效應引起之此波長 的減小。（圖52)對於情況i，凹凸波長2 π/、（圖52Α)在施加 之拉伸應變sst下歸因於柏松效應而減小至2 π/k’i(圖52B)， 亦即，k’pki。然而，相應凹凸角θ，歸因於魚骨狀結構之展 開而大於角Θ。短波長λ=(2 π/1^)8ίη(θ/2)變為λ，=(2 _ π/1<^)δίη(θν2)，其在角改變之效應克服柏松效應時可大於 λ。吾人之理論模型給出對於严〇、ι·8〇//〇及3·8〇/〇， λ=12·4、14·6及17·2 μιη，此證實了如在實驗中所觀測的， 短波長隨施加之應變而增大。對於情況iH，人及2 π/]^均隨 施加之延伸應變而增大，因為波紋沿延伸應變之方向而鬆 弛’且凹凸角Θ未因柏松效應而顯著改變。亦藉由熱誘發 之拉伸應變來研究彎曲薄膜之雙軸可延伸性（圖53)。由熱 應變產生之魚骨狀波紋隨著對樣本加熱而緩慢消失；其在 胃冷卻之後即完全恢復。 此等觀測結果僅適用於薄膜之中央區域。如圖39之底部 圖框中所指示，薄膜之邊緣展示1D波紋結構，其中波向量 沿邊緣而定向。圖44中展示邊緣區域、中央區域及其之間 的過渡區之AFM影像及線切圖輪廓。起源於以之邊緣附近 之1D波紋（頂部圖框）逐漸變得撓曲（中部圖框）直至其變換 為中央區域中之魚骨狀幾何形狀（底部圖框）。此等區域中 之λ值分別為16.6 μιη、13.7邮及127哗（自頂部圖框 124395.doc •55- 200836353 起）5其中八〗為0.52 μπι、〇·5 5 μιη及〇·67 μπι。與邊緣處之 ID波紋相對比，2D魚骨狀波紋具有較小人及八】，此提示以 之内部區比邊緣受到較強的壓縮應變之影響。邊緣附近之 應力狀態在某距離範圍内，由於薄膜之無牵引力邊緣而近 似為單軸壓縮。此單軸壓縮平行於此自由邊緣，且因此導 致沿該邊緣之1D波紋。然而，應力狀態在魚骨狀結構產生 之中央區域中變為等雙軸壓縮。對於丨D波紋邊緣與魚骨狀 波紋之間的過渡區，不平衡雙軸壓縮造成具有較大凹凸角 之半魚骨狀波紋。吾人之模型得到對於1D波紋分別為 16.9 μιη及〇·83 μηΐ2λ&Αι及對於魚骨狀結構分別為Μ〆 μ及0.90 μηι之九及。此等結果與實驗觀測值相當良好地 符合。 為了進一步研究此等邊緣效應，吾人製造具有1〇〇〇 之長度及 100 μιη、200 μηι、5〇〇 μιη&1〇〇〇 之寬度的矩 形薄膜其均處於同一 PDMS基板上。圖45展示此等結構 對於兩個不同水準之熱預加應變之光學顯微相片。在較低 熱預加應變（約2·3%，圖CA)處，1〇〇 μιη及2〇〇 μιη寬之薄 膜顯示出自一側至另一側的完全m波紋，其在末端具有平 坦，變形之區域。5〇〇 _寬之薄膜展示類似之⑼皮紋及平 坦區域，但波紋在結構之中部具有微微撓曲之幾何形狀， 二具有大體上小於1〇〇 μιη&2〇〇 之情況的整體有序性及 定向上之均勻性。對於i刚㈣之方塊，波紋存在於邊 j之中央區域中，其在角落中具有平坦區。薄膜之中央部 刀展不几全形成之魚骨狀幾何形狀。對於角落平坦區域， 124395.doc -56- 200836353 歸因於兩個自由邊緣而存在近似無應力之狀態。在該等角 洛附近無波紋形成。隨著增大之預加應變（4.8%，圖 45B) ’所有情況下之平坦區域在大小上均減小。ι〇波紋狀 悲在100 μπι及200 μπι之織帶中持續，但顯著魚骨狀形態在 500 μπι之情況的中央區域中出現。在較高預加應變處，等 雙轴壓縮應變存在於500 0瓜寬之薄膜的内部區域中。對於 1000 μιη之方塊薄膜，魚骨狀狀態延伸至接近邊緣之區 域。可將界定平坦區域之空間延伸之特徵長度標度（吾人 %作邊緣效應長度）Ledge估計為薄膜大小及預加應變的函 數。圖45C展示指示對於此處研究之情況，此長度以獨立 於薄膜之大小之方式隨預加應變之線性縮放的結果。隨著 預加應變變得較高，單軸應變區域之長度變得較小。因 此’可在接近兩個自由邊緣處之無應力區域中觀測到較短 範圍之1D波紋形式及類似狀態。 圖46展示在包括圓形、橢圓形、六邊形及三角形之其他 薄膜幾何形狀中形成之波狀結構的光學顯微相片。該等結 果定性地與圖45之織帶及方塊中之觀測結果相一致。特定 言之’邊緣區域展示平行於邊緣而定向之1D波紋。具有正 交定向之波紋僅出現於距邊緣距離大於Ledge處。對於圓 形’ 1D波紋歸因於薄膜之形狀而以全面徑向定向出現於接 近邊緣處，魚骨狀波紋出現於中央。橢圓形顯示出類似行 為’但在長軸之邊緣處具有平坦區域（歸因於此等區域中 之較小曲率半徑）。對於六邊形及三角形形狀，銳角隅角 (分別為120。及60。之角度）導致平坦區域。魚骨狀幾何形狀 124395.doc -57- 200836353 出現於六邊形之中央。三角形之中央展示對於此處所示之 預加應變的水準，1D波紋之合併。對於具有清角之形狀 (例如’六邊形、三角形及橢圓形之尖端），在隅角附近不 存在波紋，因為兩個相交之自由邊緣（未必垂直）給出無應 力狀態。對於三角形形狀，不存在足夠空間來產生魚骨狀 結構，即使是在中央區域中亦如此。 薄膜自身提供達成雙軸可延伸電子設備之途徑。可利用 上文概述之邊緣效應來實現對於該等設備之特 有用之特定結果。特定言之，在成像系統中，於光 之位置處保持平坦未變形區域以避免在此等設備具有波狀 形狀時發生之非理想狀態可能具有價值。圖47呈現達成此 結果之可延伸薄膜之一些代表性實例。此等結構由以3〇 μηιχ150 μιη之織帶（對於正交織帶而言為3〇叫^21〇 在 豎直及水平方向上（圖47A、圖47C)及在豎直、水平及對角 方向上（圖47E、圖47G)連接的1〇〇 μηιχ1〇〇 μιη之正方島狀 物、、且成。織V中之波紋之振幅及波長的改變提供以在較大 私度上避免正方島狀物之區域中之變形的方式來適應所施 加之應變之手段。吾人檢查此等結構在若干不同所施加應 夂下之行4 ® 47之邛分3及e展示在藉由於烘箱中加熱樣 本而施加的較低應變（約2·3%)之I態中之代表性情況了圖 47之部分。及§展示在藉由使用機械台而施加之相對較高的 雙軸應變(約1 5 %)下之相同結構。如所顯而易見的，在低 應變狀態下島狀物保持平坦；在足夠高之應變下，開始於 此等.區域中形成波紋結構。如傾斜角度之讀影像（圖 124395.doc •58· 200836353 47B、圖470、圖47卩、圖4711)中所示，在所有應變下， PDMS與Si之間的良好黏著得以保持。圖47之部分b及d中 之高放大率SEM影像的插圖亦證實Si與PDMS之強結合。 總而言之，矽之奈米薄膜可與預加應變之彈性體基板整 合以產生具有幾何形狀之一範圍的2D ”波狀”結構。此等 系統之機械行為的許多態樣與理論預測之行為良好地一 致。此等結果對於電子元件在使用期間或在安裝期間需要 充分可延伸性之系統中之應用為有用的。 # 參考文獻 1. Duan, X. & Lieber, C. M. General synthesis of compound semiconductor nanowires. Adv. Mater. 12，298-302 (2000)〇 2. Xiang，J·，Lu，W·，Hu，Y·，Wu，Y·，Yan, H. & Lieber， C. M. Ge/Si nanowire heterostructures as high-performance field-effect transistors. Nature 441，489-493 (2006) 〇Km. This wavelength is uniform over a large area (~5% change). Conversely, as is apparent from the image in Figure 40g, the long wavelength associated with the fishbone layout exhibits a wide range of values. The distribution of values is measured at ~i(10) points across this sample, which is summarized in the histogram of Figure 4〇g. 124395.doc -51- 200836353 The fishbone structure is represented by the out-of-plane displacement w=AlCOS[klXl+kl A2COS(k2X2)] (Fig. 49). Here, the coefficient: the amplitude of the ripple & the long wavelength 2 兀 / 匕, the concave and convex wavelength 2 π / k! and the amplitude of the unevenness 八 2 are determined by analyzing the specific film thickness, the mechanical properties of the film, and the substrate. The short wavelength is artificial (2 π/1^)δίη(Θ/2). Modeling uses the Si strain determined by measuring the equivalent length and the period of the wavy structure instead of the thermal pre-stress as the applied pre-stress (Fig. 5〇) ° The actual strain of the Si deformation may be attributed The load effect is usually slightly less than the estimated thermal pre-stress. For example, si strain • is 2.4% at a thermal pre-stress of 3·8 ϋ/❻. For this displacement w, the stress, strain and displacement fields in the Si film can be obtained from Von Karman plate theory in terms of Ai, ki, heart and enthalpy. The field in the PDMS substrate was obtained from the 3D elastic theory. Minimizing A!, h, A!, and h is given by the total energy composed of the film energy in the film and the flexural Moon & 1 and the elastic energy in the PDMS substrate. The Young's modulus and the Poisson's ratio of Si and PDMS are heart = 13 〇 GPa vSl 〇 · 27, EpDMS - 1 · 8 MPa and vpdms = 〇. Both the experiment and the model _ give a concave-convex angle of about 90. . The short wavelength given by the theory is 12·4 μηι under the biaxial pre-strain of 2.4%, which is in good agreement with the above experimental results. The large change in long wavelength 2 π/k2 is also predicted by theoretical calculations. 4 Γ is 30 to 60 μηι. Figure 41 presents an atomic force microscope (AFM) and a scanning electron microscope (SEM) image of a structure similar to that illustrated in the fully cooled state of Figure 40. These images clearly show that the fishbone shackles are characterized by a zigzag structure that defines two characteristic directions, even if the accompaniment is completely isotropic. Fishbone structure table Ida 124395.doc -52- 200836353 2 = Quantitative configuration, which reduces the total in-plane stress in the system and reduces the biaxial I contraction in both directions. Therefore, this geometry is preferred over a larger area than the "checkerboard" layout because the fishbone pattern is this: in both modes, the in-plane stress is relaxed in all directions. Do not entice, and extend the ▲ 1 only. Significant extensions are induced only at the concavities and convexities. The 1D mode reduces the pre-stressing only in the fortune, reducing the stress in all directions, but it produces a significant delay with the release of the volume = 0. The two line cuts extracted from the AFM image indicate the direction along the bump (the corridor i) And a undulating profile perpendicular to the periodicity (but only approximately sinusoidal) of the corrugations (profile ii). The person whose corrugation is determined by the contour ii is 12·8 μηι and 〇·66 respectively. The theoretical analysis gives 12·4 μηΐ2λ similar to the experimental data; however, the theoretical analysis of the eight] is 〇·90 μπι, which is slightly higher than the experimental results. The SEM image clearly shows the close association between the film and the pDMs as evidenced by the state of the sample approaching the small hole in the ridge in the raised and recessed regions of the corrugation. These images also indicate that the corrugated structure is not related to the location of the holes, since the 2.5 μιη hole size is much smaller than the characteristic wavelength of the deformation mode in our experiments. The study of the dependence of the geometry of the wavy structure on the thickness of the shreds provides an additional understanding of the physical phenomena and further validates the mechanical model. Figure 42 shows some of the results, including optical micrographs of the corrugated structures formed in the film at different thicknesses, similar to thermal strain, and wavelength and amplitude. For a thickness of 100 nm, the corrugated person is 12.6 (earth 0.37) μηι and 〇·64 (soil 〇7) μηι, and for a thickness of 320 nm, it is 45.1 (±1·06) μπι and 1.95 (soil 0.18) μπι. This value is quite good. I24395.doc -53· 200836353 corresponds to theoretical calculations. These theoretical calculations yield nine sums, for 1〇〇nm2 cases, 12·4 μηη and 0.90 μηι and for 32〇nm, respectively, 451 Ηηι and 3 · 29 μηι 〇 These wavy films k provide true extensibility for strain in the in-plane directions, in contrast to one dimensional extensibility provided by the previously described web geometry. Investigating this aspect, we performed uniaxial tensile elongation tests in different directions by using a quasi-mechanical stage and a thermally induced 3.8% pre-strained 2D stretchable film. Figure 43 provides a shirt image. In case i, the tensile strain applied in the direction of the long corrugations causes the fishbone structure to "expand" (~ ι 8%), gradually leading to a 1D wavy geometry in a fully extended state (8 "3.8%"). This extension induces a compressive strain having an amplitude roughly equal to one-half of the tensile strain in the orthogonal direction by the cypress effect. This compression can be accommodated by compressing the wavy structure in this direction. After the tensile strain, the original fishbone corrugations recovered and showed a structure quite similar to the original (Fig. 5丨 shows the optical micrographs collected after $, 1〇, 15 extension cycles). The tensile strain applied in the direction (case u) shows a similar structural change but the '1D corrugated structure is aligned in the direction defined by the applied strain instead of the initial geometry at 70 full extension. For the vertical case m, At a small strain (8" of 1,8%), some parts of the sample completely lost the fishbone layout and created new 1D ripples along the extension. With increasing strain, more regions undergo this transformation until the entire region is composed of such an oriented ripple. These newly formed 1D corrugations are oriented perpendicular to the original corrugations; after release, they simply deflect to form a disordered fishbone geometry. For all of the cases shown in Fig. 43b 124395.doc -54- 200836353, the wavelengths increase with tensile strain and return to their original values after release, even if the compressive stress is induced by the cypress effect in the orthogonal direction. The same is true. This behavior is due to an increase in λ induced by the unfolding of the fishbone corrugation, which is greater than the decrease in this wavelength caused by the cypress effect. (Fig. 52) For the case i, the concave-convex wavelength 2 π/, (Fig. 52Α) is reduced to 2 π/k'i due to the cypress effect at the applied tensile strain sst (Fig. 52B), that is, K'pki. However, the corresponding embossing angle θ is larger than the angle 归因 due to the expansion of the fishbone structure. The short wavelength λ=(2 π/1^)8ίη(θ/2) becomes λ,=(2 _ π/1<^)δίη(θν2), which can be larger than λ when the effect of the angle change overcomes the cypress effect . The theoretical model of ours gives for 〇, ι·8〇//〇 and 3·8〇/〇, λ=12·4, 14·6 and 17·2 μηη, which confirms the observation as observed in the experiment. The short wavelength increases with the applied strain. For the case iH, both human and 2 π/]^ increase with the applied extension strain because the corrugations relax in the direction of the extension strain and the embossing angle 显 does not change significantly due to the cypress effect. The biaxial extensibility of the curved film was also investigated by heat induced tensile strain (Fig. 53). The fishbone corrugations produced by the thermal strain slowly disappear as the sample heats up; it fully recovers after the stomach cools. These observations apply only to the central area of the film. As indicated in the bottom panel of Figure 39, the edges of the film exhibit a 1D corrugated structure in which the wave vectors are oriented along the edges. The AFM image and line cut outline of the edge region, the central region, and the transition region therebetween are shown in FIG. The 1D ripple (top frame) originating from the edge near it gradually becomes deflected (middle frame) until it is transformed into the fishbone geometry in the central area (bottom frame). The λ values in these areas are 16.6 μηη, 13.7 邮, and 127 哗 (from the top frame 124395.doc •55-200836353). 5 of them are 0.52 μπι, 〇·5 5 μιη, and 〇·67 μπι. In contrast to the ID ripple at the edge, the 2D fishbone corrugation has a smaller person and eight, which suggests that the inner zone is more affected by the compressive strain than the edge. The stress state near the edge is within a certain distance and is nearly uniaxially compressed due to the unlatched edge of the film. This uniaxial compression is parallel to this free edge and thus results in a 1D ripple along the edge. However, the stress state becomes equal biaxial compression in the central region where the fishbone structure is produced. For the transition zone between the 丨D corrugated edge and the fishbone corrugation, unbalanced biaxial compression results in a half fishbone corrugation with a larger embossed angle. The model obtained by our model is 16.9 μιη and 〇·83 μηΐ2λ&Αι for the 1D ripple and Μ〆 μ and 0.90 μηι for the fish bone structure, respectively. These results are in good agreement with the experimental observations. In order to further investigate these edge effects, we have fabricated rectangular films having a length of 1 Å and a width of 100 μm, 200 μm, 5 Å μηη, and 1 Å, all on the same PDMS substrate. Figure 45 shows an optical micrograph of these structures for two different levels of thermal pre-strain. At a lower thermal pre-strain (about 2.3%, graph CA), a film of 1 〇〇μηη and 2〇〇μηη shows a complete m-corrugation from side to side, which is flat at the end, The area of deformation. The 5〇〇-wide film exhibits similar (9) dermatoglyph and flat areas, but the corrugations have a slightly deflected geometry in the middle of the structure, and the overall order is generally less than 1〇〇μηη&2〇〇 Sexuality and orientation uniformity. For the square of i (4), the ripple exists in the central region of the edge j, which has a flat region in the corner. The central part of the film has a fishbone geometry that is almost completely formed. For a flat area of the corner, 124395.doc -56- 200836353 is subject to an approximately stress-free state due to the two free edges. No ripples are formed near the isosceles. With increasing pre-stress (4.8%, Figure 45B), the flat area in all cases decreases in size. The ι〇 corrugated sorrow persists in the 100 μπι and 200 μπι webbing, but the significant fishbone morphology appears in the central region of the 500 μπι case. At higher pre-stressed strains, the biaxial compressive strain is present in the inner region of the film at 500 mils wide. For a 1000 μm square film, the fishbone state extends to areas close to the edge. The feature length scale (the % of the edge effect) Ledge that defines the spatial extension of the flat region can be estimated as a function of film size and pre-strain. Figure 45C shows the results of a linear scaling of the length with pre-strain in a manner independent of the size of the film for the case studied here. As the pre-added strain becomes higher, the length of the uniaxial strain region becomes smaller. Therefore, a shorter range of 1D corrugated forms and the like can be observed in the unstressed regions near the two free edges. Figure 46 shows an optical micrograph of a wavy structure formed in other film geometries including circles, ellipses, hexagons, and triangles. These results are qualitatively consistent with the observations in the webbing and squares of Figure 45. The particular 'edge region' exhibits 1D ripple oriented parallel to the edge. Corrugations with orthogonal orientation appear only at a distance from the edge greater than Ledge. For the circular '1D corrugation due to the shape of the film and appearing in a full radial orientation near the edge, fishbone corrugations appear in the center. The ellipse shows a similar behavior 'but has a flat area at the edge of the long axis (due to the smaller radius of curvature in these areas). For hexagonal and triangular shapes, sharp corners (120 and 60 degrees, respectively) result in flat areas. Fishbone geometry 124395.doc -57- 200836353 Appears in the center of the hexagon. The center of the triangle shows the combination of 1D ripple for the level of pre-strain shown here. For shapes with clear angles (e.g., 'hexagons, triangles, and elliptical tips'), there are no corrugations near the corners because the two intersecting free edges (not necessarily perpendicular) give no stress. For a triangular shape, there is not enough space to create a fishbone structure, even in a central region. The film itself provides a means to achieve a two-axis extendable electronic device. The edge effects outlined above can be utilized to achieve specific results that are particularly useful for such devices. In particular, in an imaging system, it may be of value to maintain a flat, undeformed area at the location of the light to avoid non-ideal conditions that occur when such devices have a wavy shape. Figure 47 presents some representative examples of stretchable films that achieve this result. These structures consist of a webbing of 3〇μηιχ150 μηη (for the positive interlaced strip, 3 ^ ^ ^ 21 〇 in the vertical and horizontal directions (Fig. 47A, Fig. 47C) and in the vertical, horizontal and diagonal directions (Fig. 47E, Fig. 47G) The square island of 1〇〇μηιχ1〇〇μιη connected, and the change in the amplitude and wavelength of the corrugation in the V is provided to avoid the square island in a large degree of privacy. The manner of deformation in the area to accommodate the applied strain. We examine these structures under a number of different applications. 4 ® 47, points 3 and e are displayed by heating the sample in the oven. The representative of the lower strain (about 2.3%) I state is part of Figure 47. And § shows the relatively high biaxial strain (about 15%) applied by using the mechanical table. The same structure is as follows. 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Ohzono，Τ·; Shimomura，M. Langmuir 2005，21，7230 o 實例4 :藉由使用印刷半導體奈米材料而得到之異質整合 式三維電子元件 吾人已開發一種簡單方法來將寬廣類別之相異材料組合 至具有二維或三維（3D)布局之異質整合式（HGI)電子系統 中。該製程始於不同半導體奈米材料（例如，單壁碳奈米 管及氮化鎵、矽及砷化鎵之單晶奈米線/織帶）於單獨基板 上之合成。對使用柔軟印模及此等基板作為供體的附加轉 印製程繼之以設備及互連之形成之重複應用產生將此等 (或其他）半導體奈米材料的任何組合併入於剛性或可撓性 設備基板上之高效能3D-HGI電子元件。此通用方法可產 生使用其他技術難以達成或不可能達成的寬廣範圍之不常 見電子系統。 124395.doc -67- 200836353Ohzono, Τ·; Shimomura, M. Langmuir 2005, 21, 7230 o Example 4: Heterogeneous integrated three-dimensional electronic components obtained by using printed semiconductor nanomaterials We have developed a simple method to broadly dissimilar materials Combined into a heterogeneous integrated (HGI) electronic system with a two- or three-dimensional (3D) layout. The process begins with the synthesis of different semiconductor nanomaterials (e.g., single-walled carbon nanotubes and single crystal nanowires/ribbons of gallium nitride, germanium, and gallium arsenide) on separate substrates. The additional transfer process using a soft stamp and such substrates as a donor, followed by repeated application of the formation of devices and interconnects, results in the incorporation of any combination of such (or other) semiconductor nanomaterials into the rigid or High performance 3D-HGI electronic components on flexible device substrates. This versatile approach can result in a wide range of infrequent electronic systems that are difficult or impossible to achieve with other technologies. 124395.doc -67- 200836353

許多現有及新興電子設備受益於相異類別之半導體向二 維或三維（2D或3D)布局的單一系統中之整體異質整合 _)。實例包括多功能射頻通信設備、紅外（IR)成像攝影 機、可定址感應器陣列及混合CM〇s/奈米線/奈米設備電 路（3二）。在—些代表性'系統中，化合物半導體或其他材料 提供局速操作、有效光㈣或感應能力，而梦⑽⑽在通 常包括堆疊3D組態之電路中提供數位讀出及信號處理。晶 圓結合（8)及蠢晶成長（9、1G)表示用於達成此等類型之3D曰· HCH系統的兩種最為廣泛使用之方法。前者製程涉及藉由 使用黏著劑或熱起始界面化學而進行的分別形成於不同半 導體晶圓上之積體電路、光電二極體或感應器之實體結 合。此方法在許多情況中適用，但其具有重要缺點，包括 ⑴縮放至較大區或第三(亦即，堆疊)維度中之數層的有限 能力’⑻與不常見材_如’奈米結構之材料）或低溫材 似基板之不相容性，（Ui)對於貫穿晶圓之電互連的具有 挑戰性之製造及對準’ (iv)對於平坦、平面結合表面之古 要求及⑺可因藉由全異材料之差異熱膨脹/收縮而產生= 機械應k 1¾生之曲折及破裂。蠢晶成長提供—種不同方 法，其涉及藉由分子束蟲晶法或其他手段而進行 導體材料層於其他材料之晶圓之表面上的直接形成。雖I 此方法避免前述問題中之—些，但對於Μ法之要求對;: 成長之材料的品質及類刑士 0 Μ 貝及類型加心格限制，即使 Γ:及其:進階技術時亦如此。相反地，諸如無機材料: 奈米級線、織帶、薄膜或粒子或者諸如單壁碳奈米】 I24395.doc -68- 200836353 (SWNT)或石墨薄片（graphene sheet)(u_14)的基於碳之系 統之新興類別的半導體奈米材料可成長且接著懸浮於溶劑 中，或以回避對於磊晶成長或晶圓結合之需要之方式而轉 私至基板上。近來的工作展示（例如）藉由溶液澆鑄（15)而 形成之父叉奈米線二極體以2D布局的整合。此處呈現之結 果說明相異單晶無機半導體（例如，GaN、以及以心之奈 米線/織帶）可如何藉由使用可伸縮及確定性印刷技術而彼 此組合及亦與其他類別之奈米材料（例如，swnt)組合來 產生2D或3D布局之複雜HGI電子系統。特定言之，整合至 剛性無機及可撓性塑膠基板上之設備陣列、邏輯閘及活動 可定址光㈣器中的高效能金屬氧化物半導體場效電晶體 (MOSFET)、金屬半導體場效電晶體ε§ 體㈣、光電二極體及其他植 )二膜電曰曰 〜、、、且1千之起溥多層堆疊論證該 等能力中之一些。 圖57說明用於製造此等瓜⑽系統之代表性步驟。該 製程始於各處於自己的源基板上之半導體奈米材料之合 成b处呈見之σ又備整合藉由使用基於晶圓之源材料及微 影蝕刻程序而形成之罝θ f 〇 χτ ^ ^之旱4、⑽及⑸^的奈米線及奈米 織帶（16·21)與藉由化學氣相沈積而成長之議τ之網路 (13、21)。圖57之頂部的掃描電子顯微相片展示在自源基 板移除之後的此等半導體奈米材料。對於電路製造，此等 元件仍處於在製造或成長階段期間於晶圓上界定之組態： 在Sl、㈣及GaAs奈米線/織帶之情況下為對準陣列，且對 於SWNT為亞早層隨機網路。可在源基板上執行用於實現 124395.doc -69- 200836353 與Si、GaN及GaAs之歐姆接觸之高溫推雜及退火程序。下 y驟β及使用描述之基於彈性體印模之印刷技術來 將此等經處理之元#自、源| & a ^ 干目原基板轉移至設備基板（諸如圖57 中所說明的聚醯亞胺（PI)之薄片）。特^言之，抵靠源基板 層壓來-甲基石夕氧師DMS)之印模建立與半導體奈米材 料几件之軟凡得瓦爾黏著接觸。使經"塗墨"之印模與在表 面上具有液恶預聚物（例如，聚醯胺酸）之薄旋轉澆鑄層之 設備基板讓，PI薄片胸，且接著使聚合物固化使得 在印板經移除時此等半導體材料嵌埋於此層上且良好地黏 附至此層（16-20)。類似程序對於基板（亦即，剛性或可撓 性、有機或無機）之一範圍及半導體奈米材料之一範圍適 用[此製程之一略經修改的版本用於SWNT(21)。]。中間層 (在此情況下為PI)之厚度可小至5〇〇 nm，且對於此處㈣ 之系、、先通#為1至1 · 5 μιη。在包括閘極介電質、電極及互 連之形成的某一額外處理之後，可重複轉印及設備製造步 知，其始於於先前完成之電路級之頂部旋塗新的預聚物中 間層。經特別設計以用於轉印之自動台或習知遮罩對準器 致能在數平方公分上〜1 Pm之疊置重合精度。(22)(圖61)。 簡單地藉由在中間層中之由光圖案化及/或乾式蝕刻界定 之開口上療鑛金屬線及將金屬線蒸鍍至該等開口中而形成 層與層的互連（23)。此用以得到3D_HGI電子元件之不常見 方法具有若干重要特徵。第一，設備基板上之所有處理均 於低溫下發生，藉此避免可導致多層堆疊系統中之不合需 要之、形的差異熱膨脹/收縮效應。此操作亦致能對低溫 124395.doc 200836353 及中間層㈣之使用’且其有助於確保下伏電路 層不會因對上覆設備之處理而熱降級。第二，該、、。 用於寬廣類別之半導體奈米材料’包括諸如二二:= =新興材料。第三，柔軟印模致能與下伏設備層之非破壞 性接觸；此等印模連同超薄半導體材料亦可容許具有 形之表面。第四，超薄設備幾何形狀(<ι _及中間層 μΓΠ)允許層與層之電互連的簡單形成。克服習知方: 之劣勢中之許多者的此等特徵說明於下文描述之若干電路 論證中。 毛岭 圖58呈現藉由使用圖57中說明之總處理流程，使用具有 摻雜接觸點（形成於源晶圓上）、電漿增強化學氣相沈積之 叫介電質及用於源極、沒極及閘極之⑽時屬化的單 曰曰矽奈米織帶（24)而製造之三層3〇堆疊陣列以m〇sfe 丁。 每-設備使用三個對準之奈米織帶，有分別為87 _、290請及25〇 _之寬度、厚度及長度。圖2A展示系 ，之邊緣之俯視光學顯微相片，該邊緣具有經設計以分別 頌不基板之支撐一個、兩個及三個m〇sfe丁層之部分的布 局。第二層之設備幾何形狀相對於第一層及第三層之九十 度疑轉有助於闡明系統之布局。堆疊結構之示意性橫截面 圖及傾斜圖出現於圖58B中。可使用共焦光學顯微法來在 一、、隹上觀察樣本。圖58C展示該等影像之俯視圖及傾斜 圖，其經著色以易於觀察。（影像品質隨深度而稍有降 、及此歸因於自上層之散射及吸收）。圖5 8D呈現對每一層 中之代表性設備[具有19 μηι之通道長度（Lc)、由在摻雜源 124395.doc -71 - 200836353 極/汲極區域上延伸之閘極電極的距離界定之5 · 5 μπι之通道 重疊距離（Lo)及200 μιη之通道寬度（W)的頂部閘極 MOSFET]之電量測結果。三層中之每一者上之形成於ΡΙ基 板上的設備展示出極佳特性（470土30 cm2/Vs之線性遷移 率，>104之開關比及-0·1 ±0·2 V之臨限電壓），且在不同層 中的設備之間不存在系統差異。可藉由重複相同程序來向 此系統添加額外層。如圖5 9中所說明’除了具有單一半導 體之3D電路以外，可在多層中使用各種半導體以形成完整 # 3D-HGI系統。為了說明此能力，吾人分別使用GaN及Si奈 米織帶與SWNT膜而在PI基板上製造MESFET(特定言之， 高電子遷移率電晶體HEMT)、MOSFET及TFT之陣列。圖 59A及圖59B分別展示所得設備之高放大率光學影像與共 焦影像。第一層上之GaN HEMT對於源極及汲極使用歐姆 接觸點（Ti/Al/Mo/Au，其於源晶圓上加以退火），且對於閘 極使用肖特基（Ni/Au)接觸點。通道長度與寬度及閘極寬度 分別為20 μιη、1 70 μιη及5 μιη。每一設備使用具有分別為 ® 1.2 μιη、10 μιη及150 μιη之厚度、寬度及長度、藉由設備 基板上之處理而電互連的GaN織帶（由AlGaN/GaN/AIN之多 層堆疊構成）。第二層上之SWNT TFT對於閘極介電質使用 Si02/環氧樹脂，且對於源極、汲極及閘極使用Cr/Au，其 具有分別為50 μιη及200 μιη之通道長度及寬度。Si MOSFET使用與圖58中所示之設計相同的設計。可藉由使 用Si、SWNT及GaN之不同組合來建構各種其他3D-HGI設 備（圖61及圖62)。圖59C呈現圖59A及圖59B之系統中的典 124395.doc -72- 200836353 型設備之電流-電壓特徵。在所有情況中，特性均類似於 在源晶圓上製造的特性：GaN HEMT具有-2.4士0.2 V之臨 限包壓（Vth)、>1〇6之開關比及0·6土〇·5 mS之轉導；丁 TFT 具有 Vth=-5.3 士 1.5 V、>105之開關比及5.9 士 2.0 em2/Vs 之線性遷移率；Si M〇SFET具有Vth=〇2±〇 3 v、>1〇4之開 關比及500士30 cm2/Vs之線性遷移率。此等設備之一受關 〆主悲樣（其係由對薄Ρϊ基板（25 μηι)、設備（2.4 μηι)及Pl/pxj 中間層（5 μιη)之使用而得出）為其機械可撓曲性，此對於在 ®可撓性電子元件中之應用為重要的。吾人將對於圖59Α之 3D-HGI系統中之Si、SWN1^ GaN設備的有效轉導（^)評 估為撓曲半徑之函數。展示如經正規化為未撓曲狀態下之 轉導（g〜//)的此等資料之圖59D說明對於低至3.7 mm之撓曲 半徑的穩定效能。 形成於此等3D-HGI設備中之不同級之間的電互連可產 生引起關注之電路能力。較薄聚合物中間層使得此等互連 鲁此夠藉由在微影界定之開口上蒸鑛金屬線或將金屬線蒸鍍 至該等開口中而簡單地形成。圖6〇呈現一些實例。圖6〇A 中所示之第一者為3D NM〇s反相器（邏輯閘），其中驅動 (L=4 μιη，W=2〇〇 μπι)與負載（L=4 μιη，w=3〇 pm)Si MOSFET處於不同級上。在5 v之電源電壓之情況下，此雙 層反相器顯示出經良好界定的轉移特徵，其中增益為〜2， 此與使用類似電晶體之習知平面反相器（25)之效能相當。 圖60B展示藉由使用整合之η通道si MOSFET與p通道SWNT TFT而具有互補設計（CM〇s)之反相器，其經設計以使上拉 124395.doc -73 - 200836353 與下拉方向上之電流驅動能力均衡（圖65)。以至VD心端子 之5 V偏壓及自〇 V至5 V之閘極電壓（輸入）而收集之轉移曲 線出現於圖60A中。曲線形狀及增益（高達〜7)定性地與數 值電路模擬（圖65)相一致。作為第三實例，吾人建立與可 撓性PI基板上之Si MOSFET整合的金屬-半導體.金屬 (MSM)紅外（IR)偵測器（26)來論證用於製造可用於活性汛 成像裔中之單胞的能力。在此情況下，轉移至具有Si奈米 織帶MOSFET之印刷陣列之基板上的GaAsi印刷奈米織帶 (厚度、見度及長度分別為270 μηι、1〇〇 nm及400 μΓη)形成 msm之基礎。沈積於此等GaAs奈米織帶之末端上的電極 (Ti/Au=5/70 nm)形成背對背與特基二極體，其中間隔為ι〇 μιη。所得偵測益單元顯示出隨IR照射之強度而增大的電 流增強（圖60C)，此與電路模擬（圖66)相一致。在不考慮自 半導體之表面反射的光之情況下，在丨又至5又觀測到於 850 nm之波長處約0·30 A/w之回應率。該系統亦顯示出具 有低於1 cm之曲率半徑的可撓曲性，此對於諸如廣角以夜 視成像器之彎曲焦平面陣列之進階系統可為有用的。 印刷半導體奈米材料提供得到3D_HGI系統之新方法且 可在各種應用領域中具有重要應用，不僅是此處報告之系 統所提不的應用領域，且有其他應用領域，包括具有整合 式讀出及感應電子元件之微流體設備、將不f見感應材料 與習知矽基電子元件合併之生化感應系統及將化合物半導 體之發光器與矽驅動電子元件或微機電結構組合的光子/ 光電子系統。另外，此方法與較薄輕型塑膠基板之相容性 124395.doc •74- 200836353 可產生對於具有不常見形狀因數或機械可撓性作為關鍵特 徵的設備之額外機會。 材料及方法：設備製造：矽設備：製造始於藉由處理絕 緣體上石夕晶圓（s〇I ;具有290 nm之頂部Si層之Soitec imibond，其具有6.〇〜9.4xl〇14/cm3之摻雜級）而進行的對單 晶矽之接觸點摻雜薄織帶之界定。第一步驟涉及磷摻雜， 其使用固源及旋塗式摻雜劑（Filmtronic，P509)且使用電漿 A 強化予氣相沈積（PECVD)之 Si〇2(Plasmatherm，300 nm 900 ¾ 托 ’ 350 sccm，2% 之 SiH4/He，795 seem N〇2，250°C) 的光彳政景彡界定之層作為遮罩來控制摻雜劑於何處擴散至石夕 中。在摻雜之後，經由光阻劑之圖案化層而進行的sF6電 漿蝕刻界定織帶。藉由濃HF溶液（Fisher Chemicals)而進行 的對内埋氧化物之底切蝕刻將織帶自晶圓釋放。此程序完 成單晶矽之接觸點摻雜織帶的製造。在下一步驟中，使聚 一甲基石夕氧燒（PDMS，A:B = 1:1 〇，Sylgard 1 84，DowMany existing and emerging electronic devices benefit from the overall heterogeneous integration of heterogeneous semiconductors into a single system of 2D or 3D (2D or 3D) layouts _). Examples include multi-function RF communication devices, infrared (IR) imaging cameras, addressable sensor arrays, and hybrid CM〇s/nano/nano device circuits (3). In some representative 'systems, compound semiconductors or other materials provide local speed operation, effective light (four) or sensing capabilities, while Dream (10) (10) provides digital readout and signal processing in circuits that typically include stacked 3D configurations. The combination of crystal circle (8) and stray crystal growth (9, 1G) represents the two most widely used methods for achieving these types of 3D 曰 HCH systems. The former process involves the physical combination of integrated circuits, photodiodes or inductors formed on different semiconductor wafers by using an adhesive or thermal initiation interface chemistry. This method is applicable in many cases, but it has important drawbacks, including (1) the limited ability to scale to a larger area or a number of layers in a third (ie, stacked) dimension '(8) versus an uncommon material such as 'nano structure Material) or low-temperature material-like substrate incompatibility, (Ui) challenging manufacturing and alignment for electrical interconnections through the wafer' (iv) ancient requirements for flat, planar bonded surfaces and (7) Produced by differential thermal expansion/contraction of dissimilar materials = mechanically twisted and broken. Stellate growth provides a different approach involving the direct formation of a layer of conductor material on the surface of a wafer of other materials by molecular beam crystallization or other means. Although I avoid some of the above problems, the requirements for the law are correct:: The quality of the material being grown and the type of prisoner 0 Μ and type plus the heart rate limit, even if: 及其: and: advanced technology The same is true. Conversely, such as inorganic materials: nanoscale wires, webbing, films or particles or carbon-based systems such as single-walled carbon nanotubes I24395.doc -68- 200836353 (SWNT) or graphite sheet (u_14) The emerging class of semiconductor nanomaterials can be grown and then suspended in a solvent or transferred to a substrate in a manner that avoids the need for epitaxial growth or wafer bonding. Recent work has shown, for example, the integration of a parent-handed nanowire diode formed by solution casting (15) in a 2D layout. The results presented herein illustrate how different single crystal inorganic semiconductors (eg, GaN, and nanowires/ribbons) can be combined with each other by using scalable and deterministic printing techniques and also with other classes of nanometers. Materials (eg, swnt) are combined to produce a complex HGI electronic system in a 2D or 3D layout. In particular, high-performance metal-oxide-semiconductor field-effect transistors (MOSFETs) and metal-semiconductor field-effect transistors integrated into device arrays, logic gates, and active addressable light (4) devices on rigid inorganic and flexible plastic substrates. Ε§ Body (4), Photodiode and other implants) Two-layer stacks of ~,, and thousands of stacks demonstrate some of these capabilities. Figure 57 illustrates a representative step for making such a melon (10) system. The process begins with the synthesis of the semiconductor nanomaterials on its own source substrate, and is integrated with 罝θ f 〇χτ ^ formed by using wafer-based source materials and photolithography etching procedures. ^ The drought of 4, (10) and (5) ^ nanowires and nano-webbing (16.21) and the network of growth by chemical vapor deposition (13, 21). The scanning electron micrograph at the top of Figure 57 shows these semiconductor nanomaterials after removal from the source substrate. For circuit fabrication, these components are still in a configuration defined on the wafer during the manufacturing or growth phase: in the case of Sl, (4) and GaAs nanowires/webbing, the array is aligned, and for SWNTs, the sub-earth layer Random network. A high temperature push and anneal procedure for achieving ohmic contact of 124395.doc -69-200836353 with Si, GaN, and GaAs can be performed on the source substrate. The next step β and the use of the described elastomer-based impression-based printing technique to transfer the processed source #自源| & a ^ dry original substrate to the device substrate (such as the poly layer illustrated in Figure 57) a sheet of quinone imine (PI)). In particular, the stamping of the source substrate (MMS) was established to adhere to the soft van der Waals of several pieces of semiconductor nanomaterial. The substrate of the <inking" and the thin rotating cast layer having a liquidish prepolymer (e.g., polylysine) on the surface, the PI sheet, and then the polymer is cured These semiconductor materials are embedded on this layer and adhere well to this layer (16-20) as the plates are removed. Similar procedures apply to a range of substrates (i.e., rigid or flexible, organic or inorganic) and a range of semiconductor nanomaterials [a slightly modified version of this process is used for SWNT (21). ]. The thickness of the intermediate layer (PI in this case) can be as small as 5 〇〇 nm, and for the system (4) here, the first pass # is 1 to 1 · 5 μιη. After an additional treatment including the formation of gate dielectrics, electrodes, and interconnects, repeatable transfer and device fabrication steps begin with the spin-coating of a new prepolymer at the top of the previously completed circuit level. Floor. An automatic table or conventional mask aligner specially designed for transfer enables stacking coincidence accuracy of ~1 Pm over several square centimeters. (22) (Fig. 61). The layer-to-layer interconnection (23) is formed simply by treating the metal lines on the openings defined by photo-patterning and/or dry etching in the intermediate layer and evaporating the metal lines into the openings. This uncommon method for obtaining 3D_HGI electronic components has several important features. First, all processing on the device substrate occurs at low temperatures, thereby avoiding the undesirable differential thermal expansion/contraction effects that can result in undesirable multi-layer stacking systems. This operation also enables the use of low temperature 124395.doc 200836353 and intermediate layer (d) and it helps to ensure that the underlying circuit layer is not thermally degraded by the processing of the overlying device. Second, the, ,. Semiconductor nanomaterials for a broad category include, for example, two or two: = = emerging materials. Third, the soft stamp enables non-destructive contact with the underlying device layer; these stamps, along with the ultra-thin semiconductor material, also allow for a shaped surface. Fourth, the ultra-thin device geometry (<ι_ and intermediate layer μΓΠ) allows for a simple formation of electrical interconnections of layers. Overcoming the knowledge of the conventional parties: Many of the disadvantages are illustrated in several circuit demonstrations described below. The Maoling diagram 58 is presented using a process having the doped contact points (formed on the source wafer), a plasma-enhanced chemical vapor deposition called dielectric, and a source for use, using the overall process flow illustrated in FIG. The three-layer 3-turn stacked array manufactured by the unipolar nano-webbing (24) with the immersion and the gate (10) is m〇sfe. Each device uses three aligned nanoribbon ribbons with widths, thicknesses, and lengths of 87 _, 290, and 25 〇, respectively. Figure 2A shows a top view optical micrograph of the edge of the system having a layout designed to support portions of one, two, and three m〇sfe layers, respectively, without the substrate. The device geometry of the second layer relative to the ninety degrees of the first and third layers helps to clarify the layout of the system. A schematic cross-sectional view and a tilted view of the stacked structure appear in Figure 58B. Confocal optical microscopy can be used to observe the sample on the sputum. Figure 58C shows a top view and a tilt view of the images, which are colored for easy viewing. (Image quality decreases slightly with depth and is attributed to scattering and absorption from the upper layer). Figure 5 8D shows a representative device in each layer [having a channel length (Lc) of 19 μηι, defined by the distance of the gate electrode extending over the doping source 124395.doc -71 - 200836353 pole/drain region) 5 · 5 μπι channel overlap distance (Lo) and 200 μιη channel width (W) top gate MOSFET] power measurement results. The device formed on the germanium substrate on each of the three layers exhibited excellent characteristics (linear mobility of 470 soil 30 cm2/Vs, > 104 switching ratio and -0.11 ± 0·2 V) There is no systematic difference between devices in different layers. Additional layers can be added to this system by repeating the same procedure. As illustrated in Figure 59, in addition to the 3D circuit having a single half conductor, various semiconductors can be used in the multilayer to form a complete #3D-HGI system. To illustrate this capability, we have fabricated MEMSFETs (specifically, high electron mobility transistor HEMTs), MOSFETs, and TFT arrays on PI substrates using GaN and Si nanowebs and SWNT films, respectively. Figures 59A and 59B show high magnification optical images and confocal images of the resulting device, respectively. The GaN HEMT on the first layer uses ohmic contacts (Ti/Al/Mo/Au, which is annealed on the source wafer) for the source and drain, and Schottky (Ni/Au) contact for the gate. point. The channel length and width and gate width are 20 μηη, 1 70 μιη, and 5 μιη, respectively. Each device uses a GaN webbing (composed of a multi-layer stack of AlGaN/GaN/AIN) electrically interconnected by processing on the device substrate using thicknesses, widths, and lengths of ® 1.2 μm, 10 μm, and 150 μm, respectively. The SWNT TFT on the second layer uses Si02/epoxy for the gate dielectric and Cr/Au for the source, drain and gate, with channel lengths and widths of 50 μm and 200 μm, respectively. The Si MOSFET uses the same design as that shown in FIG. Various other 3D-HGI devices can be constructed by using different combinations of Si, SWNT, and GaN (Fig. 61 and Fig. 62). Figure 59C presents the current-voltage characteristics of the type 124395.doc-72-200836353 device of the system of Figures 59A and 59B. In all cases, the characteristics are similar to those fabricated on the source wafer: GaN HEMT has a threshold voltage (Vth) of -2.4 ± 0.2 V, >1〇6 switching ratio and 0·6 bandit· 5 mS transconductance; D-TFT has a switching ratio of Vth=-5.3 ± 1.5 V, > 105 and a linear mobility of 5.9 ± 2.0 em2/Vs; Si M〇SFET has Vth = 〇 2 ± 〇 3 v, &gt ; 1〇4 switching ratio and linear mobility of 500 ± 30 cm2 / Vs. One of these devices is subject to the main sadness (which is derived from the use of thin tantalum substrates (25 μηι), equipment (2.4 μηι) and Pl/pxj intermediate layers (5 μιη)) for its mechanical flexibility Flexibility, which is important for applications in flexible electronic components. We will evaluate the effective transduction (^) of the Si, SWN1^ GaN devices in the 3D-HGI system of Figure 59 as a function of the deflection radius. Figure 59D, which shows such data as normalized to untransduced (g~//), illustrates the stable performance for deflection radii as low as 3.7 mm. Electrical interconnections between different stages formed in such 3D-HGI devices can create circuit capabilities that cause concern. The thinner polymeric intermediate layer allows such interconnections to be simply formed by vaporizing the metal lines on the openings defined by the lithography or by vapor evaporating the metal lines into the openings. Figure 6A presents some examples. The first one shown in Fig. 6A is a 3D NM〇s inverter (logic gate) in which the drive (L=4 μηη, W=2〇〇μπι) and the load (L=4 μηη, w=3) 〇pm) Si MOSFETs are at different levels. In the case of a supply voltage of 5 v, the dual-layer inverter exhibits a well-defined transfer characteristic with a gain of ~2, which is comparable to the performance of a conventional planar inverter (25) using a similar transistor. . 60B shows an inverter with complementary design (CM〇s) by using an integrated n-channel si MOSFET and p-channel SWNT TFT, which is designed to pull up 124395.doc -73 - 200836353 with the pull-down direction The current drive capability is balanced (Figure 65). The transfer curve collected with a 5 V bias of the VD core terminal and a gate voltage (input) from 〇 V to 5 V appears in Fig. 60A. The curve shape and gain (up to ~7) are qualitatively consistent with the digital circuit simulation (Figure 65). As a third example, we have established a metal-semiconductor (MSM) infrared (IR) detector (26) integrated with a Si MOSFET on a flexible PI substrate to demonstrate that it can be used in the production of active 汛 imaging. The ability of a single cell. In this case, the GaAsi-printed nanowebs (thickness, visibility, and length of 270 μηι, 1 〇〇 nm, and 400 μΓη, respectively) transferred onto a substrate having a printed array of Si nanoribbon ribbon MOSFETs form the basis of msm. The electrodes (Ti/Au = 5/70 nm) deposited on the ends of the GaAs nanowebs form back-to-back and special-base diodes with a spacing of ι〇 μιη. The resulting detection unit shows an increase in current as a function of IR illumination (Fig. 60C), which is consistent with the circuit simulation (Fig. 66). The response rate of about 0·30 A/w at a wavelength of 850 nm was observed at 丨 and 5, without considering the light reflected from the surface of the semiconductor. The system also exhibits flexibility with a radius of curvature of less than 1 cm, which may be useful for advanced systems such as wide-angle curved focal plane arrays for night vision imagers. Printed semiconductor nanomaterials provide a new approach to 3D_HGI systems and can be used in a variety of applications, not only in the applications not covered by the systems reported here, but also in other applications, including integrated readout and A microfluidic device that senses electronic components, a biochemical sensing system that combines inductive materials with conventional germanium-based electronic components, and a photonic/photonic subsystem that combines a compound semiconductor illuminator with a germanium drive electronic component or a microelectromechanical structure. In addition, the compatibility of this method with thinner lightweight plastic substrates 124395.doc •74- 200836353 can create additional opportunities for devices with unusual form factors or mechanical flexibility as key features. Materials and Methods: Equipment Manufacturing: Tantalum Equipment: Fabrication begins with the processing of a silicon-on-insulator wafer (s〇I; Soitec imibond with a top Si layer of 290 nm, which has 6.〇~9.4xl〇14/cm3 The doping level is performed to define the contact point of the single crystal germanium doped thin webbing. The first step involves phosphorus doping using a solid-state and spin-on dopant (Filmtronic, P509) and using plasma A for enhanced vapor deposition (PECVD) of Si〇2 (Plasmatherm, 300 nm 900 3⁄4 Torr' 350 sccm, 2% SiH4/He, 795 seem N〇2, 250 °C) The layer defined by the diaphragm is used as a mask to control where the dopant diffuses into the stone. After doping, the sF6 plasma etch through the patterned layer of photoresist defines the webbing. The undercut etching of the buried oxide by concentrated HF solution (Fisher Chemicals) releases the webbing from the wafer. This procedure completes the fabrication of contact point doped webbing of single crystal germanium. In the next step, polymethyl oxalate (PDMS, A: B = 1:1 〇, Sylgard 1 84, Dow)

Corning)之平坦彈性體印模與光阻劑塗佈之織帶接觸，且 接著剝離印模，從而將織帶自晶圓移除，且藉由疏水性 PDMS與光阻劑之間的凡得瓦爾力使得織帶仍黏附至印模 之表面。抵靠旋塗有較薄液態PI前驅物聚醯胺酸 (Sigma—Aldfichlnc.)層（〜1·5 μηι)之 25 μιη 的聚醯亞胺 片來層壓如此以來自晶圓之s _ S i織帶而經”塗墨”的印模。 使前驅物固化，剝離PDMS印模且汽提光阻劑將織帶保留 為嵌埋於PI基板之表面上且良好地黏附至該表面。閘極介 電質層由藉由PECVD於相對較低之溫度，250°C下沈積之 124395.doc -75- 200836353The flat elastomer stamp of Corning) is in contact with the photoresist coated webbing, and then the stamp is peeled off to remove the webbing from the wafer, and by the van der Waals force between the hydrophobic PDMS and the photoresist The webbing is still adhered to the surface of the stamp. Laminating a 25 μm polytheneimide sheet coated with a thin liquid PI precursor polyglycine (Sigma-Aldfichlnc.) layer (~1·5 μηι) to laminate the s_ from the wafer i ribbon and "painted" impression. The precursor was cured, the PDMS stamp was peeled off and the stripping photoresist was left to be embedded on the surface of the PI substrate and adhered well to the surface. The gate dielectric layer is deposited by PECVD at a relatively low temperature, 250 ° C. 124395.doc -75 - 200836353

Si02層（厚度為〜100 nm)組成。光微影及CF4電漿蝕刻界定 對矽之摻雜源極/汲極區域之開口。在藉由光微影及濕式 餞刻而進行之單一步驟中界定Cr/Au(5/100 nm，藉由電子 束蒸鑛自底部至頂部而形成，丁611^8〇&1?01800)之源極、 >及極及閘極電極。The SiO 2 layer (thickness is ~100 nm) is composed. Photolithography and CF4 plasma etching define the opening of the doped source/drain region of the crucible. Cr/Au (5/100 nm, formed by electron beam evaporation from bottom to top) in a single step by photolithography and wet engraving, Ding 611^8〇&1?01800 ) source, > and pole and gate electrodes.

GaN設備：在具有異質結構[AlGaN(18 nm)/GaN(0.6 μιη)/Α1Ν(0·6 pm)/Si]的GaN之塊狀晶圓上製造GaN微結 構。歐姆接觸區由AZ 5214光阻劑界定且接著於RIE系統中 # 以 SiCl4 電漿而加以清洗。Ti/Al/Mo/Au(15 nm/60 nm/35 nm/5 0 nm)金屬層接著藉由電子束蒸鍍（Ti/Al/Mo)及熱蒸鑛 (An)而沈積。洗掉完整之抗蝕劑使金屬接觸點保留於GaN 上。在N2環境中於850°C下歷時30秒之熱退火形成歐姆接 觸點。Si〇2(Plasmatherm，300 nm5 900 毫托 5 350 seem, 2% 之SiH4/He，795 seem N02，250°C)及 Cr金屬（電子束蒸鍍 器，150 nm)層經沈積作為對於隨後的感應耦合電漿（ICP) 蝕刻之遮罩材料。光微影、濕式蝕刻及RIE處理（50毫托， ^ 40 seem CF4, 100 W，14分鐘）界定GaN之織帶幾何形狀。在 以丙酮移除光阻劑之後，使用ICP乾式蝕刻（3.2毫托，15 seem Cl2，5 seem Ar，-100 V偏壓，14分鐘）來移除曝露之 GaN且稍稍蝕刻至Si中（〜1.5 μπι)以促進隨後的各向異性蝕 刻。接著藉由使用四甲基銨氫氧化物（Aldrich，150°C，歷 時4分30秒）而自GaN下方蝕刻掉Si。將樣本浸潰於 BOE(6:l，NH4F: HF)中歷時30秒以移除PECVD Si02，且將 新的50 nm之電子束蒸鍍之Si02層沈積於GaN織帶的頂部 124395.doc -76- 200836353 上。接著抵靠塗佈有2 μηι之聚胺基甲酸酯（pu，Norland optical adhesive，No· 73)的PI薄片層壓藉由來自母晶圓之 GaN織帶而經”塗墨”之PDMS厚片。使樣本曝露於uv光 (173 pWcm2)下15分鐘以使PU固化。剝離PDMS且藉由浸 沒於BOE中20秒而移除電子束Si〇2導致GaN元件向塑膠基 板之轉移。使用負性光阻劑（AZ nLOF2020)來圖案化Ni/Au (80/180 nm)之肖特基接觸點。藉由az汽提器（KWIK，歷 時3 0分鐘）來移除光阻劑。 SWN 丁設備：使用化學氣相沈積（CvD)來在Si〇2/si晶圓 上生長個別單壁碳奈米管之隨機網路。使用連同曱醇而沈 積於基板上之鐵蛋白（Sigma Aldrich)作為催化劑。饋入氣 體為曱烧（1900 seem CH4連同300 seem H2)。藉由Ar氣之 高流動來沖洗爐中之石英管以在生長之前進行清洗。在生 長期間，使溫度保持於900°C歷時20分鐘。轉移涉及類似 於如先前所描述之製程的印刷之程序或者將厚Au層及π前 驅物塗佈於具有管之SiOVSi基板上的稍稍不同之方法。在 使PI固化之後剝離Au/PI。相對於塗佈有薄環氧樹脂層 (SU8, 150 nm)之經預圖案化之設備基板而層壓此層，且接 著分別藉由氧反應性離子蝕刻及濕式蝕刻而移除？1及層 完成轉移。在底部閘極設備之情況中，基板支撐經預圖案 化之閘極電極及介電質。特定言之，藉由光微影而圖案化 Cr/Au/Cr(2 nm/10 nm/10 nm)之閘極電極，且接著使用 PECVD將300 nm之Si〇2沈積於基板上。直接於管之頂部界 定Cr/Au(2 nm/20 nm)之源極及汲極電極。 124395.doc -77- 200836353 3D電路：3D Si NMOS反相器：藉由重複應用相同製造 程序來建構多層設備。特定言之，將PI前驅物旋轉澆鑄於 設備之現有層之頂部，且將矽織帶轉印於頂部。接著使用 相同製程來製造設備。對於豎直金屬互連，藉由在 AZ4620光阻劑之層中光圖案化開口，且接著藉由於RIE系 統中使用CF4及02電漿蝕刻掉此曝露區中之Si02及PI而界 定電極區。向此區中沈積300 nm之A1於底部建立接觸，且 在藉由蝕刻之Si02及PI而形成之階梯邊緣上提供電連續連 鲁接。 SWNT及Si CMOS反相器：SWNT設備由藉由光微影在管 網路上界定的Au(20 nm)之源極/汲極接觸點組成。 SiO2(100 nm)/Si晶圓基板提供閘極介電質及閘極。接著在 選擇性地以光阻劑（AZ5214)塗佈SWNT電晶體之後將環氧 樹脂（SU8, 5 00 nm)旋塗至此基板上。在用於環氧樹脂之固 化的UV曝露之後，抵靠基板而層壓以未摻雜Si織帶π塗墨” 之PDMS厚片，且隨後藉由緩慢人工剝離來移除該厚片以 ^ 完成轉印製程。使用Cr/Au(5 nm/100 nm)作為對於石夕設備 中之源極及汲極電極之肖特基接觸點。使用Al( 100 nm)以 連接SWNT與Si電晶體。 整合有Si TFT之GaAs MSM IR偵測器：使用GaAs晶圓 (IQE Inc.，Bethlehem，PA·)以產生背對背肖特基二極體。 由具有多個磊晶層[摻雜Si之η型GaAs(120 nm)/半絕緣（SI)-GaAs(150 nm)/AlAs(200 nm)/SI-GaAs]的 GaAs之高品質塊 狀晶圓產生織帶。η型GaAs之載體濃度為4x1017 cm·3。在 124395.doc -78- 200836353 蝕刻劑（4 mL H3P04(85 重量 ％)、52 mL 112〇2(30重量％)及 48 mL去離子水）中對具有光阻劑遮罩圖案之GaAs晶圓進行 各向異性蝕刻。以乙醇中之稀HF溶液（在體積上為1:2)來 飿刻掉AlAs層。接著藉由電子束蒸鑛器沈積2 nmtTi及28 nm之Si〇2之層。接著使以GaAs織帶塗墨之PDMS印模與塗 佈有PI的Si電晶體之層（厚度為ι·5 μπι)接觸。剝離PDMS且 藉由ΒΟΕ蝕刻劑移除Ti及Si〇2完成GaAs向設備基板之轉 移。藉由電子束蒸鍍而沈積用於离特基接觸點之金屬 _ (Ti/Au=5 nm/70 nm)。藉由首先圖案化AZ4620光阻劑之 層，接著於RIE系統中使用CF4及〇2電漿蝕刻穿開口且接著 沈積300 nm之A1來界定GaAs背對背肖特基二極體與Si MOSFET之間的電互連。 設備表徵：使用半導體參數分析器（Agilent，4155C)及習 知探測台來進行二極體及電晶體之電表徵。在具有85〇 nm 之波長的IR LED源下量測IR回應。 電路模擬：為了比較CMOS反相器之量測而得之轉移曲 _ 線與一模擬，經驗地產生對於η通道Si MOSFET與p通道 SWNT TFT之 2 級 PSPICE 模型。基於預設 pSPICE MOSFET 模型（MbreakN及MbreakP)而產生此等PSpICE模型，該預 設PSPICE MOSFET模型具有提取之參數來配合圖65B所示 之Si NMOS及SWNT PMOS之量測而得的四個曲線。藉由 使用與Si MOSFET串連連接之背對背南特基二極體而經驗 地產生對於GaAs MSM光偵測器之pspiCE模型。 實例4之參考文獻： 124395.doc -79- 200836353 1· Κ· Banerjee, S. J. Souri，P. Kapur，K. C. Saraswat， Proc. IEEE，89, 602 (2001) 〇 2. S. F. Al-Sarawi, D· Abbott, P. D. Franzon, IEEE Trans. Components， Packaging, and Manufacturing Technology，Part B，21，2 (1998) o 3. A. S. Brown, W. A. Doolittle, N. M. Jokerst, S. Kang, S· Huang, S. W. Seo Materials Science and Engineering B 87, 317 (2001)。GaN device: A GaN micro-structure was fabricated on a bulk GaN wafer having a heterostructure [AlGaN (18 nm) / GaN (0.6 μm) / Α 1 Ν (0.6 pm) / Si]. The ohmic contact region is defined by AZ 5214 photoresist and then washed in a RIE system with SiCl4 plasma. The Ti/Al/Mo/Au (15 nm/60 nm/35 nm/5 0 nm) metal layer was then deposited by electron beam evaporation (Ti/Al/Mo) and thermal distillation (An). The complete resist is washed away to leave the metal contacts on the GaN. An ohmic contact was formed by thermal annealing at 850 ° C for 30 seconds in an N 2 environment. Si〇2 (Plasmatherm, 300 nm 5 900 mTorr 5 350 seem, 2% SiH4/He, 795 seem N02, 250 ° C) and Cr metal (electron beam evaporator, 150 nm) layer were deposited as a follow-up Inductively coupled plasma (ICP) etched mask material. Photolithography, wet etching, and RIE processing (50 mTorr, ^40 seem CF4, 100 W, 14 minutes) define the ribbon geometry of GaN. After removing the photoresist with acetone, ICP dry etching (3.2 mTorr, 15 seem Cl2, 5 seem Ar, -100 V bias, 14 minutes) was used to remove the exposed GaN and slightly etched into Si (~ 1.5 μm) to promote subsequent anisotropic etching. Si was then etched from under the GaN by using tetramethylammonium hydroxide (Aldrich, 150 ° C for 4 minutes and 30 seconds). The sample was immersed in BOE (6:1, NH4F: HF) for 30 seconds to remove PECVD SiO 2, and a new 50 nm electron beam evaporated SiO 2 layer was deposited on top of the GaN webbing 124395.doc -76 - 200836353 on. Then, the PIMS slabs which are "inked" by the GaN webbing from the mother wafer are laminated against the PI sheets coated with 2 μm of polyurethane (No. 73). . The sample was exposed to uv light (173 pWcm2) for 15 minutes to cure the PU. Stripping the PDMS and removing the electron beam Si〇2 by immersing in the BOE for 20 seconds resulted in the transfer of the GaN element to the plastic substrate. A negative photoresist (AZ nLOF2020) was used to pattern the Schottky contact of Ni/Au (80/180 nm). The photoresist was removed by an az stripper (KWIK, which lasted for 30 minutes). SWN Ding Equipment: A random network of individual single-walled carbon nanotubes grown on Si〇2/si wafers using chemical vapor deposition (CvD). Ferritin (Sigma Aldrich) deposited on the substrate together with sterol was used as a catalyst. The feed gas is calcined (1900 seem CH4 along with 300 seem H2). The quartz tube in the furnace is flushed by the high flow of Ar gas to be cleaned prior to growth. During the growth period, the temperature was maintained at 900 ° C for 20 minutes. The transfer involves a procedure similar to that of the printing process as previously described or a slightly different method of applying a thick Au layer and a π precursor to a SiOV substrate having a tube. The Au/PI was peeled off after the PI was cured. This layer is laminated with respect to a pre-patterned device substrate coated with a thin epoxy layer (SU8, 150 nm), and then removed by oxygen reactive ion etching and wet etching, respectively. 1 and layer Complete the transfer. In the case of a bottom gate device, the substrate supports the pre-patterned gate electrode and dielectric. Specifically, a Cr/Au/Cr (2 nm/10 nm/10 nm) gate electrode was patterned by photolithography, and then 300 nm of Si〇2 was deposited on the substrate using PECVD. The source and drain electrodes of Cr/Au (2 nm/20 nm) are defined directly at the top of the tube. 124395.doc -77- 200836353 3D Circuitry: 3D Si NMOS Inverter: Constructs a multi-layer device by repeatedly applying the same manufacturing process. Specifically, the PI precursor is spin cast on top of the existing layer of equipment and the webbing is transferred to the top. The same process is then used to fabricate the device. For vertical metal interconnects, the openings are defined by photo-patterning openings in the layer of AZ4620 photoresist, and then by etching the SiO2 and PI in the exposed regions using CF4 and 02 plasma in the RIE system. A 300 nm A1 is deposited in this region to establish contact at the bottom, and an electrical continuous splicing is provided on the stepped edge formed by etching SiO 2 and PI. SWNT and Si CMOS Inverters: SWNT devices consist of source/drain contact points of Au (20 nm) defined by photolithography on the network. The SiO2 (100 nm)/Si wafer substrate provides gate dielectric and gate. An epoxy resin (SU8, 500 nm) was then spin coated onto the substrate after selectively coating the SWNT transistor with a photoresist (AZ5214). After UV exposure for curing of the epoxy resin, the PDMS slab is laminated with the undoped Si ribbon π inked against the substrate, and then the slab is removed by slow manual peeling to complete Transfer process. Use Cr/Au (5 nm/100 nm) as the Schottky contact point for the source and drain electrodes in the Shixi device. Use Al (100 nm) to connect the SWNT to the Si transistor. GaAs MSM IR detector with Si TFT: GaAs wafer (IQE Inc., Bethlehem, PA.) was used to create a back-to-back Schottky diode. Having a plurality of epitaxial layers [n-doped η-type GaAs A high-quality bulk wafer of GaAs (120 nm)/semi-insulating (SI)-GaAs (150 nm)/AlAs (200 nm)/SI-GaAs is used to produce a webbing. The carrier concentration of n-type GaAs is 4x1017 cm·3. GaAs crystal with photoresist mask pattern in 124395.doc -78- 200836353 etchant (4 mL H3P04 (85 wt%), 52 mL 112〇2 (30 wt%) and 48 mL deionized water) The circle was anisotropically etched. The AlAs layer was engraved with a dilute HF solution in ethanol (1:2 in volume), followed by deposition of 2 nmtTi and 28 nm layers of Si〇2 by electron beam concentrator. Next, the PDMS stamp coated with the GaAs webbing is brought into contact with the layer of the Si-coated Si transistor (having a thickness of 1⁄5 μm). The PDMS is peeled off and the Ti and Si〇2 are removed by the etchant to complete the GaAs orientation. Transfer of the device substrate. Metal _ (Ti/Au=5 nm/70 nm) for the contact point of the detachment is deposited by electron beam evaporation. By first patterning the layer of AZ4620 photoresist, followed by RIE The system uses CF4 and 〇2 plasma etch through openings and then deposits 300 nm of A1 to define the electrical interconnection between the GaAs back-to-back Schottky diode and the Si MOSFET. Device Characterization: Using a Semiconductor Parameter Analyzer (Agilent, 4155C) and the conventional probe station for electrical characterization of diodes and transistors. The IR response is measured at an IR LED source with a wavelength of 85 〇 nm. Circuit Simulation: For comparison of CMOS inverter measurements The transfer _ line and a simulation, empirically generated a 2-stage PSPICE model for the n-channel Si MOSFET and the p-channel SWNT TFT. These PSpICE models are generated based on the preset pSPICE MOSFET models (MbreakN and MbreakP), the preset PSPICE The MOSFET model has extracted parameters to match Figure 6. Four curves measured by the Si NMOS and SWNT PMOS shown in 5B. The pspiCE model for GaAs MSM photodetectors is empirically generated by using a back-to-back south-tepit diode connected in series with a Si MOSFET. References for Example 4: 124395.doc -79- 200836353 1· Κ· Banerjee, SJ Souri, P. Kapur, KC Saraswat, Proc. IEEE, 89, 602 (2001) 〇 2. SF Al-Sarawi, D· Abbott , PD Franzon, IEEE Trans. Components, Packaging, and Manufacturing Technology, Part B, 21, 2 (1998) o 3. AS Brown, WA Doolittle, NM Jokerst, S. Kang, S· Huang, SW Seo Materials Science and Engineering B 87, 317 (2001).

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15· Y, Huang，X. Duan，C. M. Lieber， Small 1， 1 (2005) 〇 16. M. A. Meitl，Z. Zhu，V. Kumar，K. Lee，X. Feng，Y· Huang, R. G. Nuzzo, J. A. Rogers, Nature Materials 5，3 3 (2006)。 17. E. Menard, K. J. Lee, D. Y. Khang, R. G. Nuzzo, J. A. Rogers，Appl. Phys. Lett. 84，5398 (2004) o 18. Y. Sun? S. Kim3 I. Adesida, J. A. Rogers, Appl. Phys. Lett· 87, 083501 (2005)。 19. K. Lee，M. A. Meitl，V. Kumar，J.-HL Ahn，I· Adesida，J. A. Rogers, R. G. Nuzzo? Appl. Phys. Lett, accepted o 20. S.-H. Hur, D.-Y. Khang, C. Kocabas, J. A. Rogers, Appl· Phys. Lett· 85，5730 (2004) o 21. Materials 及 Methods are available as supporting material on Science Online o 124395.doc -81 - 200836353 22· J· Dong，M. A. Meitl，E. Menard，Ρ· Ferreira及 J, Α· Rogers，未出版。 23. S. Linder，H. Baltes, F. Gnaedinger及 E. Doering: Proc. IEEE Micro Eletro Mech. Systems 349，(1994) o 24. J.-H. Ahn, H.-S. Kim, K. Lee, Z.-T. Zhu? E. Menard, R· G. Nuzzo，J· A. Rogers，IEEE Electron Devices Lett· 27, 460 (2006) 〇 25. J.-H. Ahn? H.-S. Kim? K. Lee, Z.-T. Zhu, E. Menard, R· G. Nuzzo，J. A. Rogers，未出版。 26. J. B. D. Soole，H. Schumacher, IEEE J. Quantum Electron. 27, 737 (1991)。 美國專利申請案第11/1 15,954號、第1 1/145,574號、第 1 1/145,542 號、第 60/863,248 號、第 11/465,3 17 號、第 1 1/423,287號、第 1 1/423，192號及第11/421，654號在不與本 發明之描述不一致的程度上以引用方式併入本文中。 遍及此申請案之所有參考文獻（例如包括經頒予或授予 之專利或等效物之專利文件；專利申請公開案；及非專利 文獻或其他源材料）在每一參考文獻至少部分不與本申請 案之揭示内容不一致的程度上（例如，部分不一致之參考 文獻藉由引用除了該參考文獻之部分不一致之部分以外的 部分而併入）以全文引用之方式併入本文中’如同個別地 以引用方式併入一般。 本文已使用之術語及表達係用作描述之術語且非限制之 術語，且在使用該等術語及表達中不欲排除所展示及描述 124395.doc -82- 200836353 的特欲之任何等效物或其部分，但應認識到，各種修改在 所主張的本發明之範疇内為可能的。因此，應瞭解，雖然 已稭由較佳實施例、例示性實施例及可選特徵而特別揭示 本發明，{旦可由熟習此項技術者採用對本文揭示之概念的 修改及變化，且應瞭解，將該等修改及變化視作處於由所 ^請專利範圍界定之本發明之㈣内。本文提供之特定 實施例為本發明之有用實施例的實例，且熟習此項技術者 ;易瞭解可藉由使用本發明之描述中所闡述之設備、設 備組件、方法步驟之大量變化來執行本發明。如對於熟習 此項技術者為明顯的，對於本發明之方法有用之方法2設 備可包括大量可選組成及處理元件及步驟。 除非另行規定，否則本文描述或舉例說明之組件的每一 表述或組合可用以實踐本發明。 在說明書中無論何時給出一範圍(例如，溫度範圍、時 間範圍或者組成或濃度範圍）時，所有中間範圍及子範圍 #以及所給出之範圍中包括的所有個別值均欲包括於揭示内 容中。應瞭解，包括於束女$ >、+、士 ^ , 尽文之描述中的任何子範圍或者範 圍或子範圍中之個別值可自本文之申請專利範圍排除。 說明書中提及之所有專利及公開案指示熟習與本發明有 關之技術者之技術水準。本文引用之參考文獻以其全文引 用之方式併入本文中以指示在其出版或申請曰期時的技術 2態’且意欲此資訊可在需要時使用於本文中以排除處於 先前技術中之特定實施例。舉例而言，在主張物質之組成 時，應瞭解’在先於申請者之發明之前的技術中已知並可 I24395.doc -83 - 200836353 用之化合物（包括在本文引用之參 安w μ 号文獻中k供致能揭示 案所關於的化合物）不欲包括 中。 。栝於本文所主張的物質組成 =於本文中時’"包含,,與·，包括’，、”含有"或"以......為 之1件^方且為包括性或開放式的’且不排除額外未敍述 法步驟。在用於本文中時’，，由……組成"排除 ΪΓ!中未規定的任何元件、步驟或成份。在用 ^文日守，本質上由……組成"不排除不在本質上影塑 申請專利範圍之基本及新穎特徵的材料或步驟。在本文： :一例子中，術語，，包含"、"本質上由組成"及"由組成" 中之任-者可由另兩個術語中之任一者替代。可在缺少未 於本文中特別揭示之任何元件、限制的情況下實踐在本文 中適當地以說明方式描述之本發明。 一般熟習此項技術者將瞭解’可在實踐本發明時使用除 特別舉例說明之内容以外的起始材料、生物材料、試劑、 合成方法、純化方法、分析方法、檢定方法及生物學方法 而無需採用過度實驗。該等材料及方法的所有技術已知之 功能等效物意欲包括於本發明中。已使用之術語及表達係 用作描述之術語且非限制之術語，且在使用該等術語及表 達中不欲排除所展示及描述的特徵之任何等效物或其部 分，但應認識到，各種修改在所主張的本發明之範疇内為 可能的。因此，應瞭解，雖然已藉由較佳實施例及可選特 徵而特別揭不本發明，但可由熟習此項技術者採用對本文 揭不之概念的修改及變化，且應瞭解，將該等修改及變化 124395.doc -84- 200836353 視作處於由所附申請專利範圍界定之本發明之範疇内。 表1:自圖31A所示之彎曲提取之參數（得自實驗及計算）。 該等計算假設活性區域之寬度（亦即，對於圖式中所示之 樣本為10 μιη)在延伸之前及之後相同。15· Y, Huang, X. Duan, CM Lieber, Small 1, 1 (2005) 〇 16. MA Meitl, Z. Zhu, V. Kumar, K. Lee, X. Feng, Y· Huang, RG Nuzzo, JA Rogers, Nature Materials 5, 3 3 (2006). 17. E. Menard, KJ Lee, DY Khang, RG Nuzzo, JA Rogers, Appl. Phys. Lett. 84,5398 (2004) o 18. Y. Sun? S. Kim3 I. Adesida, JA Rogers, Appl. Phys Lett 87, 083501 (2005). 19. K. Lee, MA Meitl, V. Kumar, J.-HL Ahn, I. Adesida, JA Rogers, RG Nuzzo? Appl. Phys. Lett, accepted o 20. S.-H. Hur, D.-Y Khang, C. Kocabas, JA Rogers, Appl· Phys. Lett 85, 5730 (2004) o 21. Materials and Methods are available as supporting materials on Science Online o 124395.doc -81 - 200836353 22· J· Dong, MA Meitl, E. Menard, Ρ Ferreira and J, Α Rogers, unpublished. 23. S. Linder, H. Baltes, F. Gnaedinger and E. Doering: Proc. IEEE Micro Eletro Mech. Systems 349, (1994) o 24. J.-H. Ahn, H.-S. Kim, K. Lee, Z.-T. Zhu? E. Menard, R. G. Nuzzo, J. A. Rogers, IEEE Electron Devices Lett. 27, 460 (2006) 〇 25. J.-H. Ahn? H.-S Kim? K. Lee, Z.-T. Zhu, E. Menard, R. G. Nuzzo, JA Rogers, unpublished. 26. J. B. D. Soole, H. Schumacher, IEEE J. Quantum Electron. 27, 737 (1991). U.S. Patent Application Serial Nos. 11/1 15,954, 1 1/145,574, 1 1/145,542, 60/863,248, 11/465,317, 1 1/423,287, 1 1 /423,192 and 11/421,654 are hereby incorporated by reference herein in their entirety inso- All references (such as patent documents including patents or equivalents granted or granted); patent application publications; and non-patent literature or other source materials are at least partially inconsistent with each reference in this application. To the extent that the disclosure of the application is inconsistent (e.g., a partially inconsistent reference is incorporated by reference to a portion other than the inconsistent portion of the reference) is incorporated herein by reference in its entirety as if individually The reference is incorporated into the general. The terms and expressions used herein are used to describe the terms and not to limit the terms, and the use of such terms and expressions is not intended to exclude any equivalents shown and described in the description of 124395.doc-82-200836353. Or a part thereof, but it will be appreciated that various modifications are possible within the scope of the claimed invention. Therefore, it is to be understood that the invention may be particularly modified by the preferred embodiments, the exemplary embodiments and the optional features, and modifications and variations of the concepts disclosed herein may be employed by those skilled in the art And such modifications and variations are considered to be within the scope of the invention as defined by the scope of the claimed invention. The specific embodiments provided herein are examples of useful embodiments of the present invention and are familiar to those skilled in the art; it is readily understood that the present invention can be implemented by a large number of variations of the apparatus, device components, and method steps described in the description of the invention. invention. As will be apparent to those skilled in the art, the method 2 apparatus useful for the method of the present invention can include a wide variety of optional components and processing elements and steps. Each expression or combination of components described or illustrated herein can be used to practice the invention, unless otherwise specified. Whenever a range (eg, temperature range, time range, or composition or concentration range) is given in the specification, all intermediate ranges and subranges # and all individual values included in the ranges given are intended to be included in the disclosure. in. It should be understood that any sub-range or range of sub-ranges or sub-ranges included in the description of the syllabus may be excluded from the scope of the patent application herein. All patents and publications mentioned in the specification are indicative of the skill of those skilled in the art. The references cited herein are hereby incorporated by reference in their entirety in their entirety to the extent of the disclosure of the disclosure of the disclosure of Example. For example, when advocating the composition of a substance, it should be understood that 'the compound used in the prior art prior to the applicant's invention and available for use in I24395.doc -83 - 200836353 (including the reference to the reference number in this article) The compounds in the literature for the purpose of revealing the case are not intended to be included. . The composition of matter claimed in this article = in this article '"includes,, and, including ',,' contains " or " is one of the squares and is included Or open-ended 'and does not exclude additional unreported steps. When used in this context, ', consists of "exclude any component, step or component not specified in ΪΓ! Essentially composed of ... does not exclude materials or steps that do not essentially affect the basic and novel characteristics of the scope of the patent application. In this article: In an example, the term, contains ", " essentially consists of " And "composed of" may be replaced by any of the other two terms. The practice may be appropriately described herein in the absence of any elements or limitations not specifically disclosed herein. The present invention is described in the following. It will be understood by those skilled in the art that the starting materials, biological materials, reagents, synthetic methods, purification methods, analytical methods, and assay methods other than those specifically illustrated may be used in the practice of the present invention. And biological side The method does not require undue experimentation. Functional equivalents of all the techniques of the materials and methods are intended to be included in the present invention. Terms and expressions that have been used are used as the terms of the description and are not limiting, and The terms and expressions are not intended to exclude any equivalents or parts of the features shown and described, but it should be understood that various modifications are possible within the scope of the claimed invention. The invention is not specifically described by the preferred embodiments and the optional features, but modifications and variations of the concepts disclosed herein may be employed by those skilled in the art, and it should be understood that 84-200836353 is considered to be within the scope of the invention as defined by the scope of the appended claims. Table 1: Parameters of the bending extraction from Figure 31A (from experiments and calculations). These calculations assume the width of the active area ( That is, 10 μm for the sample shown in the drawing) is the same before and after the extension.

11.3% 136.6 170.7 25,5% 139.6 151411.3% 136.6 170.7 25,5% 139.6 1514

51*5 50.3 0.65 337% 140.1 142.1 56.4 54.3 0.80 56.0% 124.3 121.8 63.6 60.4 1.2 表2 :自圖3 1D所示之彎曲提取之參數（得自實驗及計算）51*5 50.3 0.65 337% 140.1 142.1 56.4 54.3 0.80 56.0% 124.3 121.8 63.6 60.4 1.2 Table 2: Parameters for bending extraction from Figure 3 1D (from experiment and calculation)

100 Ν/Α 69 Ν/Α 33.2100 Ν/Α 69 Ν/Α 33.2

2.5 1.2 0.80 200 123 131 66.3 64.1 300 199 194 100.6 94.9 400 253 256 129.3 128.8 0.61 【圖式簡單說明】 圖1概述用於製造波狀或彎曲可延伸金屬互連之一方 124395,doc -85- 200836353 法。A為流程圖概述且B說明流程圖步驟。 圖2為可延伸波狀/彎曲電互連之相片，該電互連係藉由 自剛性基板取至經預加應變之可延伸pDMS橡膠基板上， 隨後解除應變以誘發彎曲而形成。 圖3概述藉由在波狀結構之彈性體基板上沈積而製造波 狀可延伸電極之一方法。 圖4提供關於用於製造平滑波狀彈性體基板之一方法的 細節。A為流程圖概述且b說明流程圖步驟。 圖5提供藉由圖3至圖4中所概括之方法而產生之平滑波 狀PDMS基板的影像。所展示之互連具有226%之可延伸性 且具有約900 nm厚（700 nm A1/ 200 nm Au)之金屬互連、約 38彳政米之波長及約15.6微米之振幅（自峰至谷之距離）。b展 不互連之一用於與設備組件建立電接觸之末端。可將設備 組件定位於基板之平坦部分中。 圖6A具有尖點之市售雙凸透鏡陣列（購自Edmund Optics)。B旋塗光可固化環氧樹脂以製造平滑波狀基板。 C抵靠得自B之基板而澆鑄PDMS印模以產生具有平滑特徵 之波狀彈性體印模。 圖7藉由經由蔽蔭遮罩而蒸鍍至平滑波狀彈性體基板上 而沈積之可延伸電極。電極在受張力而延伸至高達〜1〇0/〇 期間保持傳導性及連接性。定標線條為約〇1 mm。A為彈 性體基板上之波狀起伏之橫截面圖。B為蒸鑛至波狀彈性 體基板上之電極之俯視顯微相片。焦平面處於波狀起伏之 峰上。C為蒸錄至波狀彈性體基板上之電極之俯視顯微相 124395.doc •86- 200836353 片。焦平面處於波狀起伏之谷上。 圖8為對用於使用可延伸電極製造 LED顯示器之製程之示意性說明。 可延伸被動式矩 陣 顯示器之機械 圖9說明具有波狀電極之被動式矩陣 可延伸性。 圖1〇說明分布於具有球形彎曲之透鏡上的無機光電二極 體陣列。所展示的為各種透鏡形狀及角度 圖11說明當圍繞球形表面而包繞平坦薄片時對於 性之需要。 圖12概述用於製造能夠與球面彎曲之表面相符的可延 彎曲半導體陣列之一機制。 圖13具有單一連接栅格組態（A及B)、多個（例如，兩個） 連接柵格組態（C)及花形連接組態（D)之彎曲可延伸矽陣列 之光學顯微影像。可延伸互連能夠於（例如）接觸焊墊區域 處電連接光電二極體、光收集/偵測設備及其他設備組 件。此等系統能夠與彎曲表面相符。圖13A至圖ud中描 繪之組態處於PDMS基板上。 圖14採取栅格組態的能夠支撐設備組件且與彎曲表面相 符之彎曲可延伸矽陣列之電子顯微影像。定標線條在A中 為200 μπι且在B中為50 μηι。 圖15採取柵格組態之彎曲可延伸矽陣列之電子顯微影 像，忒等陣列具有藉由複數個（例如，兩個）互連彼此連接 之鄰近接觸焊墊且能夠支撐設備組件且與彎曲表面相符。 定標線條在Α中為200 μηι且在Β中為50 μιη。 124395.doc • 87 - 200836353 支撐設備組件 子顯微影像。 且與彎曲表面相 定標線條在Α中 圖16採取花形組態的能夠 符之彎曲可延伸矽陣列之電 為200 μιη且在B中為50 μιη。 且與彎曲表面相 定標線條在Α中 圖17採取橋接組態的能夠支擇設備組件 符之彎曲可延伸矽陣列之電子顯微影像。 為200 μιη且在B中為50 μηι。 曲矽陣列上的採取栅袼陣列組 圖18 PDMS上之可延伸 悲之光電二極體之相片。2.5 1.2 0.80 200 123 131 66.3 64.1 300 199 194 100.6 94.9 400 253 256 129.3 128.8 0.61 [Simple description of the diagram] Figure 1 outlines one of the methods for making corrugated or curved extensible metal interconnects 124395, doc -85 - 200836353 . A is an overview of the flowchart and B illustrates the steps of the flowchart. 2 is a photograph of an extendable wavy/curved electrical interconnect formed by taking a self-rigid substrate onto a pre-strained extensible pDMS rubber substrate and subsequently relieving strain to induce bending. Figure 3 outlines one method of making a wave-shaped extensible electrode by deposition on an elastomeric substrate of a wavy structure. Figure 4 provides details regarding one method for fabricating a smooth wavy elastomeric substrate. A is an overview of the flowchart and b illustrates the steps of the flowchart. Figure 5 provides an image of a smoothed wave PDMS substrate produced by the method outlined in Figures 3 through 4. The interconnect shown has a dipole of 226% extensibility and a metal interconnect of about 900 nm thick (700 nm A1/200 nm Au), a wavelength of about 38 mils, and an amplitude of about 15.6 microns (from peak to valley) Distance). One of the non-interconnects is used to establish electrical contact with the device components. The device assembly can be positioned in a flat portion of the substrate. Figure 6A shows a commercially available lenticular lens array (available from Edmund Optics) with a sharp point. B spin-coating a photocurable epoxy resin to produce a smooth corrugated substrate. The PDMS stamp was cast against the substrate from B to produce a wavy elastomer stamp having smooth features. Figure 7 shows an extendable electrode deposited by evaporation onto a smooth, wavy elastomeric substrate via a shadow mask. The electrodes maintain conductivity and connectivity during tension extension up to ~1〇0/〇. The calibration line is approximately 〇1 mm. A is a cross-sectional view of the undulations on the elastomeric substrate. B is a top photomicrograph of the electrode on the vaporized to wavy elastomeric substrate. The focal plane is on the undulating peak. C is the top microscopic phase of the electrode that is vaporized onto the wavy elastomeric substrate 124395.doc •86- 200836353. The focal plane is on the undulating valley. Figure 8 is a schematic illustration of a process for fabricating an LED display using an extendable electrode. Extendable Passive Matrix Display Machine Figure 9 illustrates the passive matrix extensibility with wavy electrodes. Figure 1A illustrates an array of inorganic photodiodes distributed over a lens having a spherical curvature. Shown for various lens shapes and angles Figure 11 illustrates the need for sex when wrapping a flat sheet around a spherical surface. Figure 12 outlines one mechanism for fabricating a bendable semiconductor array that is compatible with a spherically curved surface. Figure 13 Optical microscopy image of a bendable extensible array with a single connection grid configuration (A and B), multiple (for example, two) connection grid configurations (C), and a flower connection configuration (D) . The extendable interconnect electrically connects the photodiode, the light collecting/detecting device, and other device components to, for example, the contact pad area. These systems are compatible with curved surfaces. The configuration depicted in Figures 13A through ud is on the PDMS substrate. Figure 14 is an electron microscopic image of a curved, extendable array of arrays that can support the device components and conform to the curved surface in a grid configuration. The calibration line is 200 μπι in A and 50 μηι in B. Figure 15 is an electron micrograph of a bendable extensible array of grid configurations having adjacent contact pads connected to each other by a plurality of (e.g., two) interconnects and capable of supporting device components and bending The surface matches. The calibration line is 200 μηι in the Α and 50 μηη in the Β. 124395.doc • 87 - 200836353 Supporting device components Submicroscopic image. And the curved line is aligned with the curved surface. Figure 16 takes the shape of the flower configuration and can bend the array to 200 μm and 50 μm in B. And the curved surface is aligned with the curved line. Figure 17 is a bridge configuration that can be used to select the device component to bend the electron microscopic image of the array. It is 200 μηη and is 50 μηι in B. Take the grid array on the Qufu array. Figure 18 The photo of the photodiode on the PDMS.

圃U爾證可延伸互連在延伸與 畫面1中使系統鬆弛。如藉由延箭、圯行為。在 3及4中使系統延伸。書 一面2 n τ —千之取大延伸為約Η)。/。且導致 大體上平坦之互連(對於在延伸力之方向上對準之。 在畫面⑴中釋放系統，且畫面8具有與畫面 何形狀及組態等效的幾何形狀及組態。定標線條為。2 mm 〇 · 圖20能夠與彎曲基板以及平坦基板 模"或"氣球印模”設備。 接觸之虱泡印 圖。能夠與球面.彎曲及平坦表面相符之另一設備為可延 伸球面模製之印模。抵靠彎曲表面(在此實例中為凹入透 鏡)潦鑄印模且將其移除。使印模延伸以使其表 上 變平’可將互連轉移至該表面。 士圖22在”氣泡"或"氣球"印模上之延伸循環期間之可延伸 f曲石夕陣列。在此實例中，鄰近接觸焊塾之間的互連包人 兩個波狀互連（厚度為290㈣之Si)。延伸測試使用氣泡: 124395.doc -88- 200836353 展來提供多向延伸。最右側晝面處於最大延伸中，且底部 兩幅晝面展示當移除延伸力時，互連鬆弛回至左上部畫面 所示的其延伸之前的組態。 圖23經由氣球印模而印刷至塗佈有黏著劑（pDMs或su_ 8)之玫璃透鏡上之矽。 圖24概括用於設計半導體奈米織帶中之3維彎曲形狀之 處理步驟。A製造UVO遮罩且使用其在PDMS基板上圖案 化表面化學。B形成彎曲GaAs織帶且將其嵌入於PdmS 中。C彎曲GaAs織帶對延伸及壓縮之回應。D使用a&b中 之程序而形成之樣本的SEM影像。用於產生此樣本之預加 應變為 60%，其中 Wact=10 μη^ψίη=4〇〇 陣。 圖25藉由使用33,7%之預加應變且以（A)Wact=1〇 μηι及 Win=190 μηι;及（B)Wact=l〇〇 pm&Win=1〇〇 μιη而形成於 PDMS基板上的彎曲之側視輪廓。兩個樣本均由於織帶自 PDMS之分離而在非活性區域中顯示彎曲。具有較小峰之 正弦波僅形成於活性區域中，其中Wau=1〇〇 。此等兩 個樣本之比較指示將Waet選擇為小於一臨界值避免較小波 狀結構之形成。 圖26嵌入於PDMS中之彎曲GaAs織帶在顯微切片之後的 側視影像。此影像展示PDMS完全填充織帶與下伏基板之 間的間隙。在此情況下之彎曲以6〇%之預加應變且以 Waet-10 μπι及Win=3 0〇 μιη而形成。在此等彎曲織帶之表面 上洗_ iPDMS預聚物在烘箱中於下固化4小時。 圖27彎曲（A及D)GaAs及（B、C)Si織帶之側視輪廓的光學 124395.doc -89· 200836353 顯被相片。A形成於以Wact= 10 μπι及Win= 190 μηι，以不同 預加應變：11·3%、25.5%、33.7%及56.0%(自頂部至底部） 而經圖案化之PDMS上的GaAs織帶結構。對於Spre=33 7% 及5 6 · 0 %之虛線為以數學方法預測之互連幾何形狀。b形成 於經預加應變至50%且以Wact=15 μηι及Win為350、300、 25 0、250、300及3 50 μηι(自左向右）而經圖案化之PDMS基 板上的S i織帶結構。藉由使樣本以4 5之角度傾斜而獲得影 像。C形成於經預加應變至5 〇 %且以黏著位點之平行線 (Wact=15 μιη且Win=250 μηι)而經圖案化之PDMS基板上的Si 織帶結構，該等平行線以相對於織帶之長度成3〇之角度 而定向。藉由使樣本以75之角度傾斜而獲得影像。D形成 於經預加應變至60% ’具有waet=l〇 μιη及不同win(100、 2〇0、300及4〇〇 μιη(自頂部至底部））之基板上的GaAs織帶 結構。The 尔 尔 可 extendable interconnects relax the system in the extension and picture 1. Such as by extending the arrow and swearing behavior. Extend the system in 3 and 4. The book is 2 n τ - the extension of the thousand is extended to about Η). /. And results in a substantially flat interconnection (for alignment in the direction of the extension force. The system is released in picture (1), and picture 8 has geometry and configuration equivalent to the shape and configuration of the picture. Calibration lines 2 mm 图 · Figure 20 can be used with curved substrates and flat substrate molds " or "balloon impressions" equipment. Contact blister printing. Another device that is compatible with spherical, curved and flat surfaces is extensible a spherically molded stamp. The stamp is cast against a curved surface (in this example, a concave lens) and removed. The stamp is extended to flatten it on the surface to transfer the interconnect to the The surface of Figure 22 can be extended during the extension cycle of the "bubble" or "balloon" stamp. In this example, the interconnection between adjacent contact pads is two. Wave interconnect (Si of thickness 290 (four)). The extension test uses a bubble: 124395.doc -88- 200836353 to provide a multi-directional extension. The rightmost side is in the maximum extension and the bottom two sides are displayed when removed When the force is extended, the interconnection relaxes back to the upper left screen. The configuration before its extension. Figure 23 is printed on a glaze coated with an adhesive (pDMs or su_8) via a balloon impression. Figure 24 is a summary of the 3D used in the design of semiconductor nanoribbons. Step of processing the curved shape. A. Fabricating a UVO mask and using it to pattern surface chemistry on a PDMS substrate. B. Forming a curved GaAs webbing and embedding it in PdmS. C-bending GaAs webbing responds to extension and compression. D uses a&amp The SEM image of the sample formed by the procedure in b. The pre-strain applied to produce this sample is 60%, where Wact = 10 μη^ψίη = 4 〇〇 array. Figure 25 by using 33, 7% pre- A curved side profile formed on the PDMS substrate with strain applied and (A) Wact = 1 〇 μηιη and Win = 190 μηι; and (B) Wact = l〇〇pm & Win = 1 〇〇 μηη. The samples all show curvature in the inactive area due to the separation of the webbing from PDMS. A sine wave with a smaller peak is formed only in the active area, where Wau = 1 〇〇. Comparison of these two samples indicates that Waet is chosen to be less than A critical value avoids the formation of smaller wavy structures. Figure 26 is embedded in PDMS A side view image of the curved GaAs webbing after microsection. This image shows that the PDMS completely fills the gap between the webbing and the underlying substrate. In this case the bend is preloaded by 6〇% and Waet-10 μπι And Win = 3 0 〇 μηη formed. On the surface of these curved webbings, the iPDMS prepolymer was cured in an oven for 4 hours. Figure 27 Bending (A and D) GaAs and (B, C) Si webbing The side of the profile of the optical 124395.doc -89· 200836353 was photographed. A is formed on GaAs ribbon structure on patterned PDMS with Wact = 10 μπι and Win = 190 μηι with different pre-strain: 11·3%, 25.5%, 33.7%, and 56.0% (from top to bottom) . The dashed lines for Spre = 33 7% and 5 6 · 0 % are mathematically predicted interconnect geometries. b is formed on a PDMS substrate patterned with a pre-strained to 50% and Wact = 15 μηι and Win 350, 300, 25 0, 250, 300 and 3 50 μη (from left to right) Ribbon structure. The image is obtained by tilting the sample at an angle of 45. C is formed on a Si ribbon structure on a PDMS substrate that has been pre-strained to 5 〇% and patterned with parallel lines of adhesion sites (Wact = 15 μηη and Win = 250 μηι), the parallel lines being relative to The length of the webbing is oriented at an angle of 3 inches. The image was obtained by tilting the sample at an angle of 75. D is formed on a GaAs web structure which is pre-strained to 60% of a substrate having waet = l 〇 μηη and different wins (100, 2 〇 0, 300 and 4 〇〇 μηη (from top to bottom)).

圖28嵌入於PDMS中之彎曲以心織帶的延伸及壓縮。a 延伸至拉伸應變之不同水準（正％)的單一彎曲織帶之影 像。斷裂在接近50%時發生αΒ壓縮至壓縮應變之不同水 準（負％)的單-彎曲織帶之影像。對於大於〜]外之壓縮應 變’小、短週期；皮狀幾何形狀出現於彎曲之高峰處。c壓 縮至壓縮應變之不同水準的單-彎曲織帶之影像。此等情 況下之彎曲係以60〇/〇之預知雍戀 iv w 1Λ 了貝加應變，以Waet=l〇 μιη 且 Win=400 μιη(Α、B)及以 Wact=i〇 ηι^ n act _ 且 Win=300 pm(C)而形成。每一 晝面中之紅線及箭頭指+ n Λ_ 日不冋一織▼上之相同位置以突出顯 示機械變形。插圖提佴靜古a # ^ ^ 穴供钻有白框之區段的放大影像，其清 124395.doc 200836353 變下裂缝之形成。根據下式而計算對應 100% 疋展示在高壓縮應 rmax L projected h projected u projected 於延伸或壓縮程度之數字：Figure 28 shows the curvature embedded in the PDMS with the extension and compression of the heart webbing. a Image of a single curved webbing that extends to different levels (positive %) of tensile strain. An image of a single-bend webbing with a different level (negative %) of αΒ compression to compressive strain occurs at approximately 50% fracture. For compressions greater than ~], the strain should be 'small, short period; the skin geometry appears at the peak of the bend. c Image of a single-bend webbing of different levels of compressive strain. In these cases, the bending is 60 〇/〇 of the foreseeable love iv w 1Λ Bega strain, with Waet=l〇μηη and Win=400 μιη (Α, B) and Wact=i〇ηι^ n act _ and Win = 300 pm (C). The red line and the arrow in each face refer to the same position on the + n Λ _ day 以 ▼ to highlight the mechanical deformation. The illustration of the 佴静静古 a # ^ ^ hole for drilling a magnified image of the section of the white frame, its clear 124395.doc 200836353 changed the formation of cracks. Calculate the corresponding 100% 疋 according to the following formula. The high compression should be rmax L projected h projected u projected in the degree of extension or compression:

圖29具有兩個彎曲GaAs織帶陣列之層之樣本的相片。 、〔層機制來製造該結構。第一個織帶之層（以 之預加應變且以Waet=i〇 μπι&ψίη=400 μη^界定之彎曲幾 何形狀）嵌入於PDMsf。第二個彎曲織帶之層藉由使用 50%之預加應變且以|^=1〇 μπι&πη=3〇〇 而形成於此 基板之表面上。 圖30 PDMS之表面上及PDMS之基質中的彎曲織帶之撓 曲。A-C為採用較低放大率之光學顯微影像（左上部圖框） 及較南放大率之光學顯微影像（右側圖框）及對pDMs上之 具有（A)凹入，（B)平坦及（c)凸起表面之彎曲織帶的 不思性說明（左下部圖框）。c中之定標線條適用於a及b。d 為嵌入於PDMS中之彎曲織帶在撓曲之前（左側）及之後（右 側）的影像。頂部及底部圖框分別展示頂部及底部表面之 彎曲。右側影像中之定標線條亦適用於左側影像^彎曲織 ▼以60/〇之預加應變且以waet=1〇 μιη及win=400 μηι而形 成0 圖31可延伸金屬_半導體-金屬光偵測器⑽以‘ semiconductor-metal photodetector，MSM PD)之表徵。A對 彎曲PD之幾何形狀（頂部）、等效電路（中部）及彎曲pD在延 伸之Ml及期間的光學影像（底部）之示意性說明。B自藉由 IR燈以不同輸出強度而輻射之彎曲PD記錄的電流（j)_電壓 124395.doc •91 - 200836353 (V)曲線。以忸定之亮度及不同程度的延伸（C)或壓縮（D)而 說明PD之ΐ-v特徵。 圖32半球彈性體轉移"印模"可將互連之Si CMOS ”小晶 片'’自習知晶圓起離，且接著將其幾何形狀變換為半球 形】θθ片之間的"上推"互連適應與此平面至彎曲表面之 變換相關聯的應變。 圖33互連之CM〇s小晶片自半球印模向匹配的半球設備 基板之轉移。光可固化黏著劑層使CMOS結合至設備基板 _且亦使表面平面化。 圖34具有失具、致動器及視覺系統，與半球印模相容之 印刷器裝置。 圖35半球印模上藉由”上推”織帶互連而電連接之單晶矽 島狀物的可壓縮陣列。 圖36經’’塗墨”至具有〜2 cm之曲率半徑之半球印模之表 面上的互連之單晶矽島狀物之陣列之光學影像。 鲁 圖37可用於半球印模之各種聚矽氧彈性體之應力/應變 曲線。對小於20%之應變的線性、純彈性回應係重要的。 圖38對具有〇·57 mm之最初均勻厚度之半球印模中的球 形至平面之變換之有限元模型化。 圖39對用於製造彈性體支撐物上之二維，，波狀”半導體奈 米薄膜之步驟的示意性說明。 圖4〇(a-f)矽奈米薄膜中之2維波狀結構在其形成期間之 各個階段之光學顯微相片。插圖展示二維功率譜，（名）低放 大率的完全形成之結構之影像。對於此樣本，石夕之厚度為 124395.doc -92- 200836353 100 nrn，其具有約4X4 mm2之横向尺寸，基板為pDMs且 熱誘發之預加應變為3.8%。（h)對應於圖框（a_f)之短波長之 曲線，及（i)於得自圖框（g)之各個點處估計的長波長之直 方圖。 圖41 PDMS上之2維波狀Si奈米薄膜之AFM(a)及SEM(b_ d)影像（傾斜角60)。石夕之厚度為1〇〇 nm，且熱預加應變為 3.8%。此等影像突出顯示波狀圖案之高度週期性性質、如 由在Si與PDMS之接近於Si中银刻之孔洞之邊緣處可見的 •密切接觸而顯見之Si與PDMS之間良好結合，及波紋結構 與此等孔洞之位置之間相關性的缺失。 圖42(a)PDMS上之以3·8%之熱預加應變形成、具有各種 厚度（55 、1〇〇 nm、26〇脑、32〇 _)之2維波狀以奈米 薄膜之光學顯微相片’及⑻短波長及振幅料厚度之依賴 性。 圖43⑷在於三個不同定向上施加之不同單車由應變下心 維波狀S!奈米薄膜之光學顯微相片。此等樣本由印⑽上 之以3,8%之熱預加應變形成、具有1〇〇 nm之厚度的以薄膜 組成。於延伸前之鬆弛狀態（頂部圖框）、延伸後之鬆弛狀 態（底部圖框）及在U%之單軸施加的拉伸應變下（頂部中部 圖框）及3.8〇/〇之單軸施加之拉伸應變下（底部中部圖框）收集 該等影像’⑻短波長對在三個不同方向上施加之應變之依 賴性。 圖44 2維波狀以奈#、薄膜之不同區域之AFM影像，其展 示接近薄膜之邊緣處的區域（頂部圖框）、稍稍遠離此邊緣 124395.doc -93- 200836353 區或之區域（中部圖框）及接近薄膜的中央之區域（底部圖 框）之維波狀幾何特徵。此等樣本由PDMS上之以3 8%之 熱預加應變形成、具有1〇〇 nm之厚度的以薄膜組成。 圖45具有1000叫1之長度且具有100 μπι、200 μιη、500 μπι及1000 ’之寬度的2維波狀以奈/卡薄膜之光學顯微相 片此等薄膜均具有！〇〇 nm之厚度且以（&)2 3%及（b)4 8% 之熱預加應變而形成於同一 PDMS基板上。（勾對於類似薄 膜邊緣效應長度對預加應變之依賴性。 圖46具有；同形狀之2維波狀Si奈#薄膜之光學顯微相 片.（a)圓形、（b)橢圓形、⑷六邊形及（d)三角形。此等薄 膜均具有100 nm之厚度且以4.8%之熱預加應變而形成於 PDMS 上。 圖47具有經設計以利用邊緣效應來在平坦島狀物之互連 陣列中提供2維可延伸性之形狀的以奈米薄膜之波狀結構 ,光學顯微相片。在此處說明之兩種情況中，8丨為1〇〇打㈤ 厚，方塊為100 μπίχΙΟΟ μηι且織帶連接為3〇 pmxi5〇之 線。預加應變為2.3%(a、e)A15%(e、g)。展示（a、c、e、 g)之織帶及方塊之選定區域的SEM影像（75之傾斜角）分別 展示於（b、d、f、h)中。冑放大率SEM影像之插圖展示从 d中之具有波紋的凸起區域。 圖48為PDMS基板波紋上之2維波狀“奈米薄膜之樣本 (100 nm厚’㈣mm2及η%之熱預加應變）的相片（頂部圖 框）’且⑴為邊緣處之丨維波紋，（ii)為内部區域處之魚骨 狀波紋且（iii)為中央處之無序魚骨狀波紋。定標線條為5〇 124395.doc i -94· 200836353 μηι 〇 圖49對魚骨狀波紋結構中之特徵性長度之示意性說明。 圖5〇魚骨狀波紋及1維波紋處作為所施加之熱預加應變 之函數的Si應變。在實驗中藉由sSi=(L4)a來量測Si應 變’其中L及λ為AFM表面輪廓中之表面及水平距離。 圖51延伸測試（〜sst=4.0%)之循環後的魚骨狀波紋之光學 顯微影像。以100 nm厚之Si薄膜及3.8%之雙軸熱預加應變 來製備測試樣本。魚骨狀波紋在高達i 5次的延伸測試之循 環之後恢復為具有與最初相當類似的結構，除了源自薄膜 裂缝之一些缺陷。 圖52對藉由應用單轴拉伸應變而進行的魚骨狀波紋之"展 開π之示意性說明。壓縮應變scp係歸因於在拉伸應變為 之情況下的柏松效應（Poisson effect) 〇 圖53魚骨狀波紋在作為雙軸延伸測試之加熱及冷卻過程 期間的形態改變之光學顯微影像。以1〇〇 nm厚之Si薄膜及 2·9%之雙軸熱預加應變來製備測試樣本。 圖54概述製造波狀可延伸電極之一方法，該方法係藉由 於結構化波狀母體上沈積，隨後在彼母體上澆鑄一印模， 使印模固化，且藉此在釋放後即將電極轉移至母體。 圖55提供藉由圖4中之方法結合圖54中之方法而製備的 在波狀PDMS上之可延伸金屬電極（Au，3〇〇 11111厚）之影 像。底部晝面為可延伸波狀金屬電極的作為所施加之拉: 應變（局達3 0%)之函數的量測得之電阻資料之圖。 圖56為本發明之方法用於製造可撓性可延伸條帶照 124395.doc -95- 200836353 明燈之應用之實例。A為說明設#能夠切度地撓曲之設 備的顯微相片，且在此實例中撓曲半徑為〇 85⑽。B提供 波狀PDMS基板上之可延伸金屬之橫截面圖（頂部晝面，^ 標線條為40 _及俯視圖（底部晝面，定標線條為3随）。 金屬能夠延伸約3G%而無物理特性之顯著降級。c為 應變對PDMS上之正弦波狀金屬互連（展示於时）之波^ (方塊’左側軸)及振幅(圓形，右側軸)的影響之圖。隨： 應變增大，存在金屬之波長之相庫 應減小。 大及金屬之振幅的相 圖5 7對用以得到昱質二雉兩工 伃巧，、貝一、准私子兀件之基於印刷半導體夺 米材料之方法的示意性說明。該製程涉及獨立地形成於源 基板上之奈米管、奈米線、奈米織帶或其他活性奈求材料 之集合向共用設備基板的重複轉印以產生超薄多層堆疊幾 何形狀的互連電子元件。 圖5 8 (A)對於半導體使用印刷⑪奈米織帶之單晶梦全屬 氧化物場效電晶體（M0SFET)之陣列之三維多層堆疊的光 學顯微相片。此影像之底部（標有第一）、中部（標有第二） 及頂部（標有第三）部分分別對應於設備之具有—個、二個 及三個層之區域。⑻示意性橫截面圖(頂部)及傾斜圖(底 部）。S、D及G分別指代源極、汲極及閘極電極（均以金色 而展不）。免藍及暗藍區域對應於矽織帶之摻雜及未摻雜 區域；紫色層為Si〇2閘極介電質。（c)於如（A)及（b)中所示 之設備基板的設備基板上藉由共焦顯微法而收集之三維影 像（左側圖框··俯視圖；右側圖框：傾斜圖p對層進行= 124395.doc -96- 200836353 色（金色：頂層；紅色：中部層；藍色：底層；矽：灰色） 以易於觀察。（D)該等層中之每一者中的Si MOSFET之電 流-電壓特徵，其展示極佳效能（470土30 cm2/Vs之遷移率） 及特性之良好均勻性。通道長度及寬度分別為19及200 μηι 〇 圖59(A)三層堆疊之三維異質式電子設備的光學顯微相 片，該等電子設備包括GaN奈米織帶ΗΕΜΤ、Si奈米織帶 MOSFET及SWNT網路TFT。（B)藉由共焦顯微法而收集之 # 三維影像。對層進行著色（金色：頂層，Si MOSFET ;紅 色：中部層，SWNT TFT ;藍色：底層）以易於觀察。（C) 第一層上之GaN設備（通道長度、寬度及閘極寬度分別為20 μχη、170 μιη及5 μηι)、第二層上之SWNT設備（通道長度及 寬度分別為50 μιη及200 μηι)及第三層上之Si設備（通道長度 及寬度分別為19 μπι及200 μπι)的電特徵。（D)每一層中之 設備的作為塑膠基板之撓曲半徑之函數的正規化轉導 (黑色方塊：Si MOSFET ;紅色圓形：SWNT ® TFT ;綠色三角·· GaN ΗΕΜΤ)(左側）。撓曲系統及探測裝 置之影像（右側）。Figure 29 is a photograph of a sample of two layers of a curved GaAs webbing array. [Layer mechanism to make this structure. The first webbing layer (which is pre-stressed and has a curved geometry defined by Waet = i 〇 μπι & ψίη = 400 μη^) is embedded in the PDMsf. The second layer of curved webbing is formed on the surface of the substrate by using 50% pre-strain and with |^=1〇 μπι&πη=3〇〇. Figure 30 Flexure of the curved webbing on the surface of the PDMS and in the matrix of the PDMS. AC is an optical microscopy image with lower magnification (upper left frame) and an optical microscopic image of souther magnification (right frame) and (A) concave, (B) flat on pDMs (c) Unexplained description of the curved webbing of the raised surface (lower left frame). The calibration lines in c apply to a and b. d is the image of the curved webbing embedded in the PDMS before (left) and after (right) flexing. The top and bottom frames show the curvature of the top and bottom surfaces, respectively. The calibration line in the right image is also suitable for the left image ^Bend woven ▼ with 60/〇 pre-strain and formed with waet=1〇μιη and win=400 μηι. Figure 31 Extensible Metal_Semiconductor-Metal Light Detection The detector (10) is characterized by 'semi-metal photodetector, MSM PD. A pair of curved PD geometry (top), equivalent circuit (middle) and curved pD in the extended Ml and the optical image (bottom) during the period. B. Current (j)_voltage 124395.doc •91 - 200836353 (V) curve recorded by a curved PD radiated by IR lamps at different output intensities. The ΐ-v characteristic of PD is described by the brightness of the setting and the degree of extension (C) or compression (D). Figure 32 Hemispherical elastomer transfer "impression" can separate the interconnected Si CMOS "small wafer" from the conventional wafer, and then transform its geometry into a hemispherical shape. Push " Interconnect adapts to the strain associated with this plane-to-curved surface transition. Figure 33 Interconnected CM〇s small wafers from hemispherical impressions to matched hemispherical device substrates. Photocurable adhesive layer enables CMOS Bonded to the device substrate _ and also planarizes the surface. Figure 34 has a dislocation, actuator and vision system, a printer device compatible with the hemispherical impression. Figure 35 Hemispherical impressions by "push up" ribbons A compressible array of evenly connected single crystal islands. Figure 36 is an interconnected single crystal island on the surface of a hemispherical impression having a radius of curvature of 〜2 cm. Optical image of the array. Lutu 37 can be used for the stress/strain curves of various polyoxynene elastomers for hemispherical impressions. A linear, purely elastic response to strains less than 20% is important. Figure 38 is a finite element modeling of a spherical to planar transformation in a hemispherical impression having an initial uniform thickness of 〇·57 mm. Figure 39 is a schematic illustration of the steps used to fabricate a two-dimensional, wavy "semiconductor nanofilm" on an elastomeric support. Figure 4 shows the formation of a two-dimensional wavy structure in a (af) nanofilm. Optical micrographs of various stages of the period. The inset shows a two-dimensional power spectrum, (name) image of a fully formed structure with low magnification. For this sample, the thickness of Shi Xi is 124395.doc -92 - 200836353 100 nrn, It has a lateral dimension of about 4×4 mm 2 , the substrate is pDMs and the heat-induced pre-strain is 3.8%. (h) corresponds to the short wavelength curve of the frame (a_f), and (i) is derived from the frame (g) The estimated long-wavelength histogram at each point. Figure 41 AFM (a) and SEM (b_d) image (tilt angle 60) of the 2-dimensional wavy Si nanofilm on PDMS. The thickness of Shi Xi is 1 〇〇nm, and the thermal pre-strain is 3.8%. These images highlight the highly periodic nature of the wavy pattern, such as by close contact with the visible edges of the holes in the Si and PDMS that are close to the silver in Si. A good association between the apparent Si and PDMS, and the correlation between the corrugated structure and the location of these holes Figure 42 (a) Two-dimensional wavy nano-film formed on the PDMS with a thermal pre-stress of 3.8% and various thicknesses (55, 1 〇〇 nm, 26 〇 brain, 32 〇 _) The optical micrographs 'and (8) the dependence of the short-wavelength and the amplitude of the thickness of the material. Figure 43 (4) is an optical micrograph of the heart-wave-shaped S! nanofilm from different strains of different bicycles applied in three different orientations. It is composed of a thin film with a thickness of 1 〇〇nm formed by a heat pre-strain of 3,8% on the stamp (10). The relaxed state before the extension (top frame) and the relaxed state after the extension (bottom frame) And collecting the images under the tensile strain applied by the uniaxial force of U% (top middle frame) and the uniaxially applied tensile strain of 3.8 〇/〇 (bottom middle frame) '(8) short wavelength pair Dependence of strain applied in three different directions. Figure 44 AFM image of different regions of the film, showing the area near the edge of the film (top frame), slightly away from this edge 124395 .doc -93- 200836353 Area or area (middle frame) and close to the film The wavy geometry of the central region (bottom frame). These samples are composed of a film with a thermal pre-stress of 3 8% on the PDMS and a thickness of 1 〇〇 nm. Figure 45 has 1000 Optical micrographs of a 2-dimensional wavy nano/ka film having a length of 1 and having a width of 100 μm, 200 μm, 500 μm and 1000 Å, all of which have a thickness of 〇〇nm and are (&) 2 3% and (b) 4 8% of the thermal pre-strain were formed on the same PDMS substrate. (Check for the dependence of the film edge effect length on the pre-strain. Figure 46 has an optical micrograph of the same shape of the 2-dimensional wavy Si Nai film. (a) round, (b) elliptical, (4) Hexagons and (d) triangles. These films each have a thickness of 100 nm and are formed on the PDMS with 4.8% thermal pre-strain. Figure 47 has been designed to exploit edge effects in flat islands An optical micrograph of a nano-film with a 2-dimensional extensibility shape in the array. In the two cases described here, 8 丨 is 1 〇〇 (5) thick, and the square is 100 μπίχΙΟΟ Ηηι and the webbing is connected to a line of 3〇pmxi5〇. The pre-added strain is 2.3% (a, e) A15% (e, g). SEM showing the selected areas of the webbing (a, c, e, g) and the squares The image (the tilt angle of 75) is shown in (b, d, f, h), respectively. The illustration of the SEM image of the magnified magnification shows the raised area with ripples from d. Figure 48 shows the 2D on the ripple of the PDMS substrate. Photograph of a wavy "nano film sample (100 nm thick '(four) mm2 and η% thermal pre-strain) (top frame)' and (1) The ripple at the edge, (ii) is the fishbone corrugation at the inner region and (iii) is the disordered fishbone corrugation at the center. The calibration line is 5〇124395.doc i -94· 200836353 μηι 〇 Figure 49 is a schematic illustration of the characteristic length of the fishbone corrugated structure. Figure 5. Si strain of the squid bone corrugation and the 1D corrugation as a function of the applied thermal pre-strain. In the experiment by sSi =(L4)a to measure the Si strain 'where L and λ are the surface and horizontal distances in the AFM surface profile. Figure 51 Optical microscopy image of the fishbone corrugation after the cycle of the extension test (~sst=4.0%) The test specimens were prepared with a 100 nm thick Si film and a 3.8% biaxial thermal pre-strain. The fishbone corrugations recovered to a structure similar to the original after the cycle of up to 5 extension tests, except for the source. Some defects in the crack of the film. Fig. 52 is a schematic illustration of the expansion of π of the fishbone corrugation by applying uniaxial tensile strain. The compressive strain scp is attributed to the tensile strain. Poisson effect 53 Figure 53 fishbone ripples An optical microscopic image of the morphological change during the heating and cooling process of the biaxial extension test. The test sample was prepared with a 1 〇〇 thick Si film and a 2.9% biaxial thermal pre-strain. Figure 54 Overview Manufacturing A method of undulating an extendable electrode by depositing a stamp on a structured wavy precursor followed by casting a stamp on the parent to cure the stamp and thereby transferring the electrode to the parent after release. 55 provides an image of an extensible metal electrode (Au, 3〇〇11111 thick) on a wavy PDMS prepared by the method of FIG. 4 in conjunction with the method of FIG. The bottom facet is a plot of the resistance data measured as a function of applied tension: strain (up to 30%) of the extensible wavy metal electrode. Figure 56 is an illustration of the application of the method of the present invention for the manufacture of flexible extendable strips 124395.doc-95-200836353. A is a photomicrograph illustrating the device capable of flexibly deflecting, and in this example the deflection radius is 〇 85 (10). B provides a cross-sectional view of the extendable metal on the corrugated PDMS substrate (top top surface, ^ mark line 40 _ and top view (bottom surface, calibration line is 3). Metal can extend about 3G% without physical Significant degradation of the characteristic. c is the effect of the strain on the sinusoidal metal interconnection (shown at time) on the PDMS (the square 'left axis) and the amplitude (circular, right axis). Large, the phase library of the wavelength of the metal should be reduced. The phase diagram of the amplitude of the metal and the metal is used to obtain the tantalum and the two-factory, and the printed semiconductor is used. Schematic description of the method of rice material. The process involves repeated transfer of a collection of nanotubes, nanowires, nanowebbing or other active material on a source substrate to a common device substrate to produce a super Thin multilayer stacking geometry of interconnected electronic components. Figure 5 8 (A) Optical microscopy of a three-dimensional multilayer stack of an array of oxide field effect transistors (M0SFETs) using a printed 11 nm webbing for semiconductors Photo. The bottom of this image (labeled The first), middle (marked second), and top (labeled third) portions correspond to areas of the device that have one, two, and three layers. (8) Schematic cross-sectional view (top) and oblique view (Bottom). S, D, and G refer to the source, drain, and gate electrodes, respectively (both in gold). The blue and dark blue regions correspond to the doped and undoped regions of the woven ribbon; The layer is a Si〇2 gate dielectric. (c) A three-dimensional image collected by confocal microscopy on the device substrate of the device substrate as shown in (A) and (b) (left frame, top view) ; right frame: oblique map p to layer = 124395.doc -96- 200836353 color (gold: top layer; red: middle layer; blue: bottom layer; 矽: gray) for easy observation. (D) in the layers The current-voltage characteristics of the Si MOSFET in each of them show excellent performance (mobility of 470 soil 30 cm2/Vs) and good uniformity of characteristics. The channel length and width are 19 and 200 μηι 〇 Figure 59 (A) Optical micrographs of three-layer stacked three-dimensional heterogeneous electronic devices including GaN Rice Ribbon Ribbon, Si Nano Ribbon MOSFET and SWNT Network TFT. (B) #3D image collected by confocal microscopy. Coloring the layer (gold: top layer, Si MOSFET; red: middle layer, SWNT TFT; Blue: bottom layer) for easy viewing. (C) GaN devices on the first layer (channel length, width, and gate width are 20 μχη, 170 μηη, and 5 μηι, respectively), and SWNT devices on the second layer (channel length) And electrical characteristics of 50 μm and 200 μηι) and Si devices on the third layer (channel length and width are 19 μm and 200 μπι, respectively). (D) Normalized transduction of the device in each layer as a function of the flexural radius of the plastic substrate (black square: Si MOSFET; red circle: SWNT ® TFT; green triangle · GaN ΗΕΜΤ) (left side). The image of the flexure system and the detector (right side).

圖60(A)聚醯亞胺基板上之3維矽NMOS反相器之印刷陣 列之影像。反相器由藉由電通道結構互連之兩個不同級上 之MOSFET(通道長度為4 μηι，負載與驅動器寬度比為6·7 且驅動器寬度為200 μηι)組成。右上部之影像提供藉由左 侧圖框中之紅色框指示之區域的放大視圖。右下部之曲線 圖展示典型反相器之轉移特徵。（Β)使用Ρ通道SWNT 124395.doc •97- 200836353 TFT(通道長度及寬度分別為30 μιη及200 μιη)及η通道Si MOSFET(通道長度及寬度分別為75 μιη及50 μιη)之印刷互 補反相器之轉移特徵。插圖提供反相器之光學顯微相片 (左側）及電路示意圖（右侧）。（C)與Si MOSFET(通道長度及 寬度分別為9 μιη及200 μιη)整合之GaAs MSM(通道長度及 寬度分別為10 μηι及100 μιη)在藉由紅外光源以850 nm而照 射的自黑暗至11 pW之不同位準處之電流-電壓回應。插圖 展示光學影像及電路圖。 圖61用於轉印、能約重合至〜1 μιη内的自動台之影像。 圖62(A)聚醯亞胺基板上之Si MOSFET及GaN ΗΕΜΤ之三 維異質整合陣列的光學顯微相片。右侧插圖展示橫截面示 意圖。電極（金色）、Si02(PE0 ;紫色）、Si(亮藍：未摻 雜；暗藍：摻雜）、GaN(暗綠：歐姆接觸點；亮綠：通 道）、聚醯亞胺（PI ;褐色）及聚胺基甲酸酯（PU ;淺棕色）均 得以展示。（B)典型Si MOSFET(通道長度及寬度分別為19 μηι及200 μιη)及GaN HEMT(通道長度、寬度及閘極寬度分 別為20 μιη、170 μιη及5 μιη)之電流電壓特徵。分別在 Vdd=0.1 V及Vdd=2 V下量測左侧圖框中關於Si及GaN之資 料。 圖63(A)聚醯亞胺基板上之Si MOSFET及SWNT TFT之三 維異質整合陣列的光學顯微相片。右侧插圖展示橫截面示 意圖。電極（金色）、環氧樹脂（青色）、SiCMPEO ;紫色）、 Si(亮藍：未摻雜；暗藍：摻雜）、SWNT(灰色）、聚醯亞胺 (PI ;褐色）及固化聚醯亞胺（淺棕色）均得以展示。（B)典型 124395.doc -98- 200836353 SWNT TFT(通道長度及寬度分別為75 μπι及200 μπι)及典型 Si MOSFET(閘極長度及通道寬度分別為19 μπι及200 μπι) 之電流-電壓特徵。分別在vdd=-〇.5 V及Vdd=0.1 V下量測左 側圖框中關於SWNT及Si之資料。 圖64(A)聚醯亞胺基板上之Si MOSFET、SWNT TFT及 GaN HEMT之三維異質整合陣列的橫截面示意性說明。（B) Si MOSFET(通道寬度=200 μπι，黑線：通道長度=9 μπι， 紅色：14 μπι，綠色：19 μπι，藍色：24 μηι)中之若干者的 # 轉移特徵、有效遷移率及開關比，（C) SWNT TFT (通道寬 度=200 μπι，黑線··通道長度=25 μιη，紅色·· 50 μηι，綠 色：75 μηι，藍色：1〇〇 μπι)之轉移特徵、有效遷移率及開 關比及（D)GaN ΗΕΜΤ(通道長度、寬度及閘極寬度分別為 20 μηι、170 μπι及5 μπι)之轉移特徵、轉導及開關比。 圖65(A)建立於矽晶圓基板上之SWNT-Si CMOS反相器 的橫截面之示意結構。（B)形成CMOS反相器之η通道Si MOSFET及p通道SWNT TFT之轉移特徵及Ι-V特徵。（C)反 • 相器之計算而得之轉移特徵及Si與SWNT電晶體之I-V特 徵。 圖66(A)建立於聚醯亞胺基板上之GaAs MSM-Si MOSFET IR偵測器的橫截面之示意結構及電路示意圖。 (B) GaAs MSM IR偵測器（L=10 μπι，W=100 μπι)之電流-電 壓特徵及Si MOSFET(L=9 μπι，w=200 μπι)在3 V電源的情況 下之轉移特徵及I-V特徵。（C) GaAs MSM之計算而得之IV 特徵及與Si MOSFET整合之GaAs MSM在3 V電源的情況下 124395.doc -99- 200836353 之I-V回應。 10 20 【主要元件符號說明】 金屬特徵/SU-8/互連 基板Figure 60 (A) Image of a printed array of 3-dimensional NMOS inverters on a polyimide substrate. The inverter consists of two different stages of MOSFETs interconnected by an electrical channel structure (channel length 4 μηι, load-to-driver width ratio of 6.7 and driver width of 200 μηι). The image on the upper right provides an enlarged view of the area indicated by the red box in the left frame. The graph at the bottom right shows the transfer characteristics of a typical inverter. (Β) Use the Ρ channel SWNT 124395.doc •97- 200836353 TFT (channel length and width are 30 μηη and 200 μηη respectively) and η-channel Si MOSFET (channel length and width are 75 μιη and 50 μιη, respectively) The transfer characteristics of the phaser. The illustrations provide an optical micrograph of the inverter (left) and a schematic of the circuit (right). (C) GaAs MSM (channel length and width 10 μηι and 100 μηη, respectively) integrated with Si MOSFET (channel length and width are 9 μηη and 200 μηη, respectively) in the dark from 850 nm by infrared light source Current-voltage response at different levels of 11 pW. Illustration Shows optical images and circuit diagrams. Figure 61 is an image of an automatic stage for transfer, which can be approximately overlapped to ~1 μηη. Figure 62 (A) Optical micrograph of a three-dimensional hetero-integrated array of Si MOSFETs and GaN germanium on a polyimide substrate. The illustration on the right shows the cross-sectional illustration. Electrode (gold), SiO 2 (PE0; purple), Si (bright blue: undoped; dark blue: doped), GaN (dark green: ohmic contact; bright green: channel), polyimine (PI; Both brown) and polyurethane (PU; light brown) were shown. (B) Current and voltage characteristics of a typical Si MOSFET (channel length and width 19 μηη and 200 μηη, respectively) and GaN HEMT (channel length, width, and gate width are 20 μηη, 170 μηη, and 5 μιη, respectively). The materials for Si and GaN in the left frame are measured at Vdd = 0.1 V and Vdd = 2 V, respectively. Figure 63 (A) Optical micrograph of a three-dimensional hetero-integrated array of Si MOSFETs and SWNT TFTs on a polyimide substrate. The illustration on the right shows the cross-sectional illustration. Electrode (gold), epoxy (cyan), SiCMPEO; purple), Si (bright blue: undoped; dark blue: doped), SWNT (grey), polyimine (PI; brown) and cured poly The quinone imine (light brown) was shown. (B) Typical 124395.doc -98- 200836353 SWNT TFT (channel length and width are 75 μπι and 200 μπι, respectively) and typical Si MOSFET (gate length and channel width are 19 μπι and 200 μπι, respectively) current-voltage characteristics . The data on SWNT and Si in the left frame are measured at vdd=-〇.5 V and Vdd=0.1 V, respectively. Figure 64 (A) is a cross-sectional schematic illustration of a three dimensional heterogeneous array of Si MOSFETs, SWNT TFTs, and GaN HEMTs on a polyimide substrate. (B) # MOSFET (channel width = 200 μπι, black line: channel length = 9 μπι, red: 14 μπι, green: 19 μπι, blue: 24 μηι), the transfer characteristics, effective mobility and Switching ratio, (C) SWNT TFT (channel width = 200 μπι, black line · channel length = 25 μιη, red · 50 μηι, green: 75 μηι, blue: 1 〇〇 μπι) transfer characteristics, effective migration Rate and switching ratio and (D) GaN ΗΕΜΤ (channel length, width and gate width are 20 μηι, 170 μπι and 5 μπι, respectively) transfer characteristics, transduction and switching ratio. Fig. 65(A) shows a schematic configuration of a cross section of a SWNT-Si CMOS inverter built on a germanium wafer substrate. (B) Transition characteristics and Ι-V characteristics of n-channel Si MOSFETs and p-channel SWNT TFTs forming CMOS inverters. (C) The transfer characteristics of the inverse phase comparator and the I-V characteristics of the Si and SWNT transistors. Fig. 66(A) is a schematic view showing the schematic structure and circuit of a cross section of a GaAs MSM-Si MOSFET IR detector built on a polyimide substrate. (B) Current-voltage characteristics of GaAs MSM IR detector (L=10 μπι, W=100 μπι) and transfer characteristics of Si MOSFET (L=9 μπι, w=200 μπι) in the case of 3 V power supply IV characteristics. (C) The IV characteristics of the GaAs MSM calculation and the GaAs MSM integrated with the Si MOSFET in the case of a 3 V power supply. IdV response of 124395.doc -99- 200836353. 10 20 [Description of main component symbols] Metal features/SU-8/interconnect substrate

22 24 25 26 30 32 34 36 40 50 60 70 90 92 100 102 110 112 波狀特徵 銳緣/銳緣谷 分隔物（裂縫） PR/光可固化環氧樹脂 彈性體印模/基板/彈性體基板 波狀表面/波狀彈性體基板表面 彈性體印模/銳緣基板 第二彈性體印模 波狀或彎曲幾何形狀/電互連 Su-8 設備組件 接觸焊墊/設備組件 中央部分 未結合區域 弟一末端 、 結合區域 弟一末端 界面 120 橋接中央部分高峰 橋接組態 124395.doc 100- 130 20083635322 24 25 26 30 32 34 36 40 50 60 70 90 92 100 102 110 112 Wave-like feature sharp edge / sharp edge valley separator (crack) PR / light curable epoxy resin elastomer stamp / substrate / elastomer substrate Wavy surface / corrugated elastomer substrate surface elastomer stamp / sharp edge substrate second elastomer stamp wavy or curved geometry / electrical interconnection Su-8 equipment component contact pad / equipment assembly central part unbonded area One end of the brother, the combined area of the end of the interface 120 bridges the central part of the peak bridge configuration 124395.doc 100- 130 200836353

140 單一栅格組態 150 花形組態 160 互連 200 凸起 210 凹入表面 25 0 電極 300 外殼腔室 310 腔室容積/外殼容積/腔室 124395.doc -101 -140 Single Grid Configuration 150 Flower Configuration 160 Interconnect 200 Raised 210 Concave Surface 25 0 Electrode 300 Enclosure Chamber 310 Chamber Volume / Enclosure Volume / Chamber 124395.doc -101 -

Claims (1)

200836353 十、申請專利範圍： 觸之可延伸互連，該互 1. 一種用於建立與設備組件之電接 連包含： 一第一末端； 一第一末端；及 於該第-末端與該第二末端之間的中央部分； “備組件由-基板支揮，且該互連之該第一末 端及該第二太她紝人不 旦 …口至该基板，且該互連之該中央部分 ^ 祝曲組態且不與該基板實體接觸。200836353 X. Patent application scope: Touchable extendable interconnect, the mutual 1. The electrical connection for establishing the device component comprises: a first end; a first end; and the first end and the second end a central portion between the ends; "the spare component is branched by the substrate, and the first end of the interconnection and the second is too stunned to the substrate, and the central portion of the interconnection ^ The configuration is not in contact with the substrate entity. 2. 3· 4. 5· 6.2. 3· 4. 5· 6. 員1之互連，其中該中央部分處於應變下。 如明求項1之互連，其中該中央部分為彎曲的。 如：求項3之互連，其中該中央部分為狐形。 如㈢求項4之互連，其中該彎曲部分具有一選自一在約 100 nm與丨_之間的範圍之振幅。 ^ ^項5之互連，其中該互連中央部分包含-或多個 結合區域，以形成不與該基板實體接觸之複數個不同彎 曲部分區域。 7·:明求項6之互連，纟中該等不同彎曲部分區域中之至 ^者的振幅不同於另一彎曲部分區域之振幅。 8·如明求項1之互連，其中該互連包含一織帶。 月求項8之互連，其中該織帶具有一大於100 nm之厚 度0 10. 求員9之互連，其中該織帶具有一在約3 00 nm盥1 mm之間的厚度。 /、 124395.doc 200836353 11, 12. 13. 14. # 15. 16. 17. 18.The interconnection of member 1, wherein the central portion is under strain. The interconnection of claim 1, wherein the central portion is curved. For example, the interconnection of the item 3, wherein the central portion is a fox. (3) The interconnection of claim 4, wherein the curved portion has an amplitude selected from a range between about 100 nm and 丨_. ^^ The interconnection of item 5, wherein the interconnect central portion includes - or a plurality of bonding regions to form a plurality of different curved portion regions that are not in physical contact with the substrate. 7: The interconnection of the item 6 is obtained, and the amplitude of the one of the different curved portions in the 不同于 is different from the amplitude of the other curved portion. 8. The interconnect of claim 1, wherein the interconnect comprises a webbing. The interconnect of item 8 wherein the webbing has a thickness greater than 100 nm 0 10. The interconnect of claim 9, wherein the webbing has a thickness of between about 300 nm and 1 mm. /, 124395.doc 200836353 11, 12. 13. 14. # 15. 16. 17. 18. 19. 20. 21. 22. :請求項!之互連’其中該互連具有—包含一中央部分 兩峰之橋接組態，三個或三個以上之互連自該高峰延 伸。 如：求項1之互連，其中該設備組件包含一與該等互連 末端中之一者電接觸之接觸焊墊。 3求項12之互連’其巾-額外設備組件與該接觸焊塾 電接觸。 如明求項1之互連，其中該基板包含一彈性體材料。 如請求項U之互連，其中該彈性體枯料為聚二甲基石夕氧 烷。 t請求項14之互連，其能夠經受一高達25%之應變，同 日^保持電導率及與該設備組件之電接觸。 一種包含複數個如請求項〗之互連之設備陣列，其中每 一互連提供一對設備組件之間的電接觸。 如睛求項17之設備陣列，其中該陣列具有一柵格組態、 花形組態、橋接組態或其任一組合。 士明求項1 7之没備陣列’其中每一設備組件藉由複數個 互連而連接至一鄰近設備組件。 如請求項19之設備陣列，其中至少一設備組件連接至八 個互連。 如請求項17之設備陣列，其中至少一互連在一不同於另 一互連的方向上定向。 如請求項17之設備陣列，其中該陣列之至少一部分包含 彼此在一方向上平行對準之複數個互連。 124395.doc -2- 200836353 23.如請求項22之設備陣列，其中該複數個平行互連中之至 少一者與該等互連中之至少另一者反相。 24·如請求項17之設備陣列，其中該複數個互連在兩個或兩 個以上的方向上定向。 25·如請求項24之設備陣列，其中該定向係在兩個彼此垂直 之方向上。 26. 如請求項17之設備陣列，其中該設備包含兩個或兩個以19. 20. 21. 22. The interconnection of the request item 'where the interconnection has a bridge configuration comprising a central portion of two peaks, three or more interconnections extending from the peak. For example, the interconnection of claim 1, wherein the device component includes a contact pad in electrical contact with one of the interconnect terminals. 3 The interconnection of claim 12's towel-extra device assembly is in electrical contact with the contact pad. The interconnect of claim 1, wherein the substrate comprises an elastomeric material. As in the interconnection of claim U, wherein the elastomer is dry polydimethyl oxalate. The interconnection of claim 14 is capable of withstanding a strain of up to 25%, maintaining electrical conductivity and electrical contact with the device components. An array of devices comprising a plurality of interconnects, such as a request item, wherein each interconnect provides electrical contact between a pair of device components. An array of devices as claimed in claim 17, wherein the array has a grid configuration, a flower configuration, a bridge configuration, or any combination thereof. The device array of each of the devices is connected to a neighboring device component by a plurality of interconnects. An array of devices as claimed in claim 19, wherein at least one of the device components is connected to eight interconnects. The device array of claim 17, wherein the at least one interconnect is oriented in a direction different from the other interconnect. The device array of claim 17, wherein at least a portion of the array comprises a plurality of interconnects that are aligned in parallel with each other in one direction. 23. The device array of claim 22, wherein at least one of the plurality of parallel interconnects is inverted from at least one of the other interconnects. 24. The device array of claim 17, wherein the plurality of interconnects are oriented in two or more directions. 25. The array of devices of claim 24, wherein the orientation is in two mutually perpendicular directions. 26. The device array of claim 17, wherein the device comprises two or two 上鄰近層，其中每一層包含複數個互連。 27. 如請求項17之設備陣列，其能夠經受一高達約之應 變而不斷裂。 表面，該表 凹入或凸起 28·如請求項17之設備陣列，其中該基板具有一 面具有為彎曲之至少一部分。 29.如請求項28之設備陣列，其中該表面具有為 之至少一部分。Upper adjacent layers, each of which contains a plurality of interconnects. 27. The device array of claim 17 which is capable of withstanding a strain up to about rupture without breaking. The surface, the table is recessed or raised. The device array of claim 17, wherein the substrate has at least a portion of the surface that is curved. 29. The device array of claim 28, wherein the surface has at least a portion thereof. 30. 31. 如請求項28之設備陣列，其中該表面為半球狀。 如請求項17之設備陣列，其中該設備為一 測器、顯示器、發光器、光伏打裝置、 led顯示器、半導體雷射、光學系統、 件、電晶體或一積體電路中之一或多者。 可延伸之光偵 薄片掃描器、 大面積電子元 之彎曲互連之 施加結合位點 32· —種製造一用於建立與設備組件之電接觸 方法，該方法包含： 提供一具有一表面之彈性體基板； 在该彈性體基板表面、該互連或兩者上 之一圖案； 124395.doc 200836353 對該彈性體基板施加一力以產生對該基板之一應變； 提供一互連； 使該互連與具有結合位點之該圖案的該基板表面接 觸，以使得該等互連於該等結合位點處結合至該基板表 面；及 移除對該基板之該力以鬆弛該基板； 藉此產生一彎曲互連，其具有在該等結合位點處結合至 該基板之末端及一處於一撓曲組態且不與該基板實體接 觸之中央部分。 33. 如請求項32之方法，其中藉由向該彈性體基板表面塗覆 可固化光聚合物而提供結合位點之該圖案，其中在具 有一自10 μιη與20 μΐη之間的一範圍選出之寬度貿⑽且藉 由自200 μιη與400 μιη之間的一範圍選出之間隔距離 Win隔開之複數個條帶中塗覆該聚合物。 34. 如請求項32之方法，其中該中央部分處於應變下。 35. 如請求項32之方法，其中該中央部分為彎曲的。 36. 如請求項32之方法，其進一步包含將該互連之至少一部 分囊封於一囊封材料中。 月求項32之方法，其中複數個互連經提供且與該基板 表面接觸以產生複數個互連，其中該等互連末端中之每 一=結合至該基板，且該互連之該中央部分處於一挽曲 、、且^中且與該彈性體基板實體隔開，藉此產生互連之— 38·如請求項37之方法 其中互連之該圖案係選自由一柵袼 124395.doc 200836353 組態、花形組態、橋接組態及其任一組合組成之群。 39. 如請求項38之方法，其中該互連具有一大於約 厚度。 40. 如請求項39之方法，其中該厚度大於3〇() nm。 4!.如請求項38之方法，其中該彎曲互連具有一對應於該互 連自該基板之-最大t直移位的振幅，且該振幅係選自 一在100 nm與1 mm之間的範圍。 42.如請求項41之方法，其中該互連具有一長度及_寬度， 其中該寬度、該振幅或者該寬度及該振幅沿該互連之該 長度而變化。 43·如明求項32之方法，其中該施加之力在該彈性體基板中 產生一應變，該應變選自一在2〇%與1〇〇%之間的範圍。 44·如請求項32之方法，其中該互連之一末端電連接至該設 備組件，且該基板能夠延伸高達約100%，壓縮高達約 50%或以低達5 mm之—曲率半徑而撓曲而無互連斷裂。 45·如凊求項32之方法，其中該互連包含^^或以。 46,如巧求項32之方法，其進一步包含將該互連自該彈性體 基板轉移至一設備基板。 47· -種製造一可延伸且可撓曲之互連之方法，其包含： a) 提供一在一表面上具有波狀特徵之基板； b) 藉由旋塗一聚合物以部分填充凹入特徵來使該等波狀 特徵平滑； C)抵靠該經旋塗之基板澆鑄一聚合印模； 句自該基板移除該聚合印模以使—聚合印模波狀表面曝 124395.doc 200836353 露；及 e)將金屬沈積至該聚合印模波狀表面上； 藉此製造一可延伸且可撓曲之互連。 48.如清求項47之方法，其中藉由電鍍而沈積該金屬。 49·如明求項47之方法，其中藉由以下步驟而沈積該金屬·· a) 提供一蔽蔭遮罩； b) 使該蔽蔭遮罩與該波狀表面接觸；及 C)經由該蔽隱遮罩蒸鍍金屬α在該波狀表面丨產生金屬 之一相應圖案。 50·如明求項47之方法，其中該具有波狀特徵之基板係藉由 對Si(l 0 〇)之各向異性蝕刻而製成。 5 1 ·如咕求項47之方法，其中該具有波狀特徵之基板係藉由 壓印Su-8而製成。 52·如請求項47之方法，其中該波狀表面具有： a) —具有一選自50 nm至} mm之間的範圍之波長； b) —具有一選自⑽咖至！ _之間的範圍之振幅；且 c) 能夠延伸高達1 〇〇〇/。而不斷裂。 53. 如請求項47之方法，其進一步包含將該等互連轉移至一 設備基板。 54. 如請求項47之方法，其進_步包含提供—設備組件及在 該互連之一末端與該設備組件之間建立一電接觸。 55. —種製造一可延伸且可撓曲之互連之方法，其包含： a) 提供一在一表面上具有波狀特徵之基板； b) 藉由旋塗-聚合物以部分填充凹人特徵來使該等波狀 I24395.doc 200836353 特徵平滑’從而產生一平滑波狀基板； c) 將金屬特徵沈積至該平滑波狀基板上且對該等金屬特 徵進行圖案化； d) 抵#該平滑波狀金屬化基板澆鑄一聚合印模；及 e) 自該基板移除該聚合印模，藉此將該等金屬特徵轉移 至"亥印模’藉此製造一可延伸且可撓曲之互連。 56·如請求項55之方法，其中該基板與該金屬具有一界面， 且該金屬與基板之界面為Au/Su_8環氧樹脂光阻劑。 57.如請求項55之方法，其中藉由電鍍而沈積該金屬。 58·如請求項55之方法，其中藉由以下步驟而沈積該金屬·· a) 提供一蔽蔭遮罩； b) 使該蔽蔭遮罩與該波狀表面接觸；及 )、、二由該蔽蔭遮罩蒸鍍金屬以在該波狀表面上產生金屬 之一相應圖案。 59. 如請求項55之方法’其中藉由光微影及姓刻而沈積該金 屬。 60. 如請求項55之方法，其中該具有波狀特徵之基板係藉由 對Si(l 〇 〇)之各向異性蝕刻而製成。 61. 如請求項55之方法’其中該具有波狀特徵之基板係藉由 壓印Su-8而製成。 62·種在印拉表面上製造一上推互連之方法，其包含： a) 在一基板表面上提供一互連，· b) 提供-具有一彎曲幾何形狀之彈性體印模； c) 將該互連自該基板轉移至該印模，其係藉由以下步驟 124395.doc 200836353 而進行： 〇向該印模施加一變形力以提供一大體上平坦的印 模表面； 使該經應變之印模與該基板上之該互連接觸； lu)藉由在一遠離該基板之方向上起離該印模而將該 互連自該基板移除，藉此將該互連自該基板表面 轉移至該彈性體印模表面；及 d)移除該變形力以使該印模鬆弛為該彎曲幾何形狀，藉 此製造一上推互連。 曰 63.如請求項62之方法，其中當鬆弛該印模時，該彎曲幾何 形狀至少部分為半球狀的。 64=請求項63之方法，其中該印模具有一圓形周界，且進 一步包含一圍繞該圓形周界之模製輪緣以在該變形力施 加期間向該印模賦予一徑向力。 65.如請求項62之彳〉去，其進一步包含將該上推互連轉移至 一設備基板上，該轉移包含： a) 提供一具有一 f曲表面形狀之設備該彎曲表面 形狀對應於該印模彎曲幾何形狀； b) 向該設備基板彎曲表面塗覆一黏著劑或黏$前驅物以 在該設備基板表面上產生黏著劑或黏著前驅物之一液 態膜層；及 Ο使具有言亥上推互連之該印模纟面與設備基板上的黏著 劑之該層接觸，其中在該接觸之後，該黏著液態層即 流動以符合該上推互連之該形狀且使該互連結合至該 124395.doc 200836353 設備基板。 =Γ65之方法，其進一步包含移除該彈性體印模。 .二項65之方法’其中該黏著劑包含—光聚合物，且 σ物黏者層藉由在該印模表面與設備基板之接觸 ν驟期間或之後施加電磁輻射而得以固化。 6=請求項62之方法，其中該印模包含聚二甲基石夕氧燒， /、對於鬲達約40%之應變具有一線性及彈性回應。30. The array of devices of claim 28, wherein the surface is hemispherical. The device array of claim 17, wherein the device is one or more of a detector, a display, an illuminator, a photovoltaic device, a led display, a semiconductor laser, an optical system, a device, a transistor, or an integrated circuit. . An extendable photodetection sheet scanner, an application bonding site for a curved interconnect of a large area electron element 32. A method for establishing electrical contact with a device component, the method comprising: providing a surface having elasticity a substrate; a pattern on the surface of the elastomer substrate, the interconnect, or both; 124395.doc 200836353 applying a force to the elastomer substrate to create strain on one of the substrates; providing an interconnection; Contacting the surface of the substrate with the pattern of binding sites such that the interconnections are bonded to the substrate surface at the bonding sites; and removing the force on the substrate to relax the substrate; A curved interconnect is produced having a central portion bonded to the substrate at the bonding sites and a central portion in a flexed configuration and not in physical contact with the substrate. 33. The method of claim 32, wherein the pattern of binding sites is provided by coating a surface of the elastomeric substrate with a curable photopolymer, wherein a pattern having a range of between 10 μηη and 20 μΐη is provided The width is traded (10) and the polymer is coated by a plurality of strips separated by a separation distance Win from a range between 200 μηη and 400 μηη. 34. The method of claim 32, wherein the central portion is under strain. 35. The method of claim 32, wherein the central portion is curved. 36. The method of claim 32, further comprising encapsulating at least a portion of the interconnect in an encapsulating material. The method of claim 32, wherein a plurality of interconnects are provided and in contact with the surface of the substrate to produce a plurality of interconnects, wherein each of the interconnect ends is bonded to the substrate, and the center of the interconnect The portion is in a wrap, and is physically separated from the elastomer substrate, thereby creating an interconnection. 38. The method of claim 37, wherein the pattern interconnected is selected from a gate 124395.doc 200836353 A group consisting of a configuration, a flower configuration, a bridge configuration, and any combination thereof. 39. The method of claim 38, wherein the interconnect has a thickness greater than about. 40. The method of claim 39, wherein the thickness is greater than 3 〇 () nm. The method of claim 38, wherein the curved interconnect has an amplitude corresponding to a maximum t-direct displacement of the interconnect from the substrate, and the amplitude is selected from a range between 100 nm and 1 mm The scope. 42. The method of claim 41, wherein the interconnect has a length and a width, wherein the width, the amplitude or the width and the amplitude vary along the length of the interconnect. The method of claim 32, wherein the applied force produces a strain in the elastomeric substrate selected from a range between 2% and 1%. The method of claim 32, wherein one of the ends of the interconnect is electrically connected to the device component, and the substrate is capable of extending up to about 100%, compressing up to about 50% or scratching a radius of curvature as low as 5 mm There is no interconnect break. 45. The method of claim 32, wherein the interconnection comprises ^^ or . 46. The method of claim 32, further comprising transferring the interconnect from the elastomeric substrate to a device substrate. 47. A method of making an extendable and flexible interconnect comprising: a) providing a substrate having wavy features on a surface; b) partially filling the recess by spin coating a polymer Characterizing the smoothing of the wavy features; C) casting a polymeric stamp against the spin-coated substrate; removing the polymeric stamp from the substrate to expose the wavy surface of the polymeric stamp 124395.doc 200836353 And e) depositing a metal onto the undulating surface of the polymeric stamp; thereby creating an extendable and flexible interconnect. 48. The method of claim 47, wherein the metal is deposited by electroplating. 49. The method of claim 47, wherein the metal is deposited by: a) providing a shadow mask; b) contacting the shadow mask with the undulating surface; and C) The masking mask vapor deposition metal alpha produces a corresponding pattern of one of the metals on the corrugated surface. The method of claim 47, wherein the substrate having the wavy features is formed by anisotropic etching of Si (10 〇). The method of claim 47, wherein the substrate having the wavy features is formed by imprinting Su-8. The method of claim 47, wherein the undulating surface has: a) - having a wavelength selected from a range between 50 nm and } mm; b) - having a color selected from (10)! The amplitude of the range between _; and c) can extend up to 1 〇〇〇/. Without breaking. 53. The method of claim 47, further comprising transferring the interconnects to a device substrate. 54. The method of claim 47, further comprising providing a device component and establishing an electrical contact with the device component at one end of the interconnect. 55. A method of making an extendable and flexible interconnect comprising: a) providing a substrate having wavy features on a surface; b) partially filling the recess by spin coating - polymer Characterizing the smoothing of the wavy I24395.doc 200836353 features to produce a smooth wavy substrate; c) depositing metal features onto the smooth undulating substrate and patterning the metallic features; d) Smoothing the wavy metallization substrate to cast a polymeric stamp; and e) removing the polymeric stamp from the substrate, thereby transferring the metallic features to a "stencil' thereby creating an extendable and flexible Interconnection. The method of claim 55, wherein the substrate has an interface with the metal, and the interface between the metal and the substrate is an Au/Su_8 epoxy resin photoresist. 57. The method of claim 55, wherein the metal is deposited by electroplating. 58. The method of claim 55, wherein the metal is deposited by the following steps: a) providing a shadow mask; b) contacting the shadow mask with the wavy surface; and The shadow mask evaporates the metal to produce a corresponding pattern of one of the metals on the undulating surface. 59. The method of claim 55, wherein the metal is deposited by photolithography and surname. 60. The method of claim 55, wherein the substrate having wavy features is formed by anisotropic etching of Si (l 〇 〇). 61. The method of claim 55, wherein the substrate having the wavy features is made by stamping Su-8. 62. A method of fabricating a push-up interconnect on a surface of a stamp comprising: a) providing an interconnect on a surface of a substrate, b) providing an elastomeric stamp having a curved geometry; c) Transferring the interconnect from the substrate to the stamp is performed by the following step 124395.doc 200836353: 〇 applying a deforming force to the stamp to provide a substantially flat stamp surface; The stamp is in contact with the interconnect on the substrate; lu) removing the interconnect from the substrate by moving away from the stamp in a direction away from the substrate, thereby interconnecting the interconnect from the substrate The surface is transferred to the elastomeric stamp surface; and d) the deforming force is removed to relax the stamp into the curved geometry, thereby creating a push-up interconnect. The method of claim 62, wherein the curved geometry is at least partially hemispherical when the stamp is relaxed. 64. The method of claim 63, wherein the stamp has a circular perimeter and further includes a molded rim surrounding the circular perimeter to impart a radial force to the stamp during the application of the deforming force. 65. As claimed in claim 62, further comprising transferring the push-up interconnect to a device substrate, the transferring comprising: a) providing a device having a curved surface shape corresponding to the curved surface shape a bending geometry of the stamp; b) applying an adhesive or a precursor to the curved surface of the device substrate to produce a liquid film on the surface of the device substrate or an adhesive film; and The stamp face of the push-up interconnect is in contact with the layer of adhesive on the device substrate, wherein after the contact, the adhesive liquid layer flows to conform to the shape of the push-up interconnect and the interconnect is bonded To the 124395.doc 200836353 device substrate. The method of Γ65, further comprising removing the elastomeric stamp. The method of item 65, wherein the adhesive comprises a photopolymer, and the σ viscous layer is cured by applying electromagnetic radiation during or after the contact of the stamp surface with the device substrate. 6 = The method of claim 62, wherein the stamp comprises polydimethyl-stone, and has a linear and elastic response to strains of about 40%. 69.如請求項62之方法，其中該互連為一可延伸電極、可延 伸被動式矩陣LED顯示器或—光偵測器陣列之部分。 7〇· -種可延伸電子設備，其包含藉由如請求項以方法製 成之任何—或多個互連，其中該等互連使-對設備㈣ 電連接，且該電子設備係選自#以下各項IE成之群：— 可延伸或可撓曲之電極、被動式矩陣LED、太陽能電 池、集光器陣列、生物感應器、化學感應器、光電二極 體陣列及半導體陣列。 鲁71·如请求項13之互連，其中該額外設備組件係選自由以下 各項組成之群：一薄膜、感應器、電路元件、控制元 件、微處理器、傳感器及其組合。 72· —種製造一雙軸可延伸半導體薄膜之方法，其包含： a) 在一基板上提供一半導體奈米薄膜材料，其中該材料 之厚度在約40 nm與約600 nm之間； b) 提供一彈性體基板； e)活化該彈性體基板之一表面； d)向該彈性體基板施加一雙軸應變，藉此使該彈性體基 124395.doc 200836353 板在兩個方向上延伸； e) 使該經活化且經延伸之彈性體基板與基板上 體材料接觸； ^ ^ f) 將該彈性體基板剝離支撐該半導體之該基板，藉此將 該半導體奈米薄膜轉移至該彈性體基板；及 ； g) 解除該彈性體基板上之該雙軸應變，藉此產生一具有 一二維波狀結構之奈米薄膜。 73·如請求項72之方法，其中該雙軸應變係藉由加熱該彈性 體基板而產生。 74·如請求項72之方法，其中該彈性體基板包含聚二曱基矽 氧烷’且該活化步驟係藉由於一含臭氧環境中使該彈性 體基板曝露於具有一在240 nm與260 nm之間的波長之電 磁輪射而進行。69. The method of claim 62, wherein the interconnect is part of an extendable electrode, an extendable passive matrix LED display, or a photodetector array. An extensible electronic device comprising any one or more interconnections made by a method as claimed, wherein the interconnections electrically connect the device (4) and the electronic device is selected from # The following IE groups: - extendable or flexible electrodes, passive matrix LEDs, solar cells, concentrator arrays, biosensors, chemical sensors, photodiode arrays, and semiconductor arrays. Lu 71. The interconnection of claim 13, wherein the additional device component is selected from the group consisting of: a film, an inductor, a circuit component, a control element, a microprocessor, a sensor, and combinations thereof. 72. A method of fabricating a biaxially extensible semiconductor film, comprising: a) providing a semiconductor nano film material on a substrate, wherein the material has a thickness between about 40 nm and about 600 nm; b) Providing an elastomeric substrate; e) activating one surface of the elastomeric substrate; d) applying a biaxial strain to the elastomeric substrate, thereby extending the elastomeric substrate 124395.doc 200836353 in two directions; Adhering the activated and stretched elastomeric substrate to a bulk material on the substrate; ^^ f) stripping the elastomeric substrate from the substrate supporting the semiconductor, thereby transferring the semiconductor nanofilm to the elastomeric substrate And g) releasing the biaxial strain on the elastomer substrate, thereby producing a nano film having a two-dimensional wavy structure. The method of claim 72, wherein the biaxial strain is produced by heating the elastomeric substrate. 74. The method of claim 72, wherein the elastomeric substrate comprises polydioxanoxane' and the activating step is by exposing the elastomeric substrate to one at 240 nm and 260 nm in an ozone-containing environment The electromagnetic wave between the wavelengths is carried out. 124395.doc 200836353 七、指定代表圖： (一) 本案指定代表圖為：第（1A)圖。 (二) 本代表圖之元件符號簡單說明： (無元件符號說明） 八、本案若有化學式時，請揭示最能顯示發明特徵的化學式： (無）124395.doc 200836353 VII. Designated representative map: (1) The representative representative of the case is: (1A). (2) A brief description of the symbol of the representative figure: (No description of the symbol of the component) 8. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: (none) 124395.doc124395.doc
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