WO2005098969A1 - 太陽電池及び太陽電池モジュール - Google Patents
太陽電池及び太陽電池モジュール Download PDFInfo
- Publication number
- WO2005098969A1 WO2005098969A1 PCT/JP2005/005910 JP2005005910W WO2005098969A1 WO 2005098969 A1 WO2005098969 A1 WO 2005098969A1 JP 2005005910 W JP2005005910 W JP 2005005910W WO 2005098969 A1 WO2005098969 A1 WO 2005098969A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- interconnector
- solar cell
- current collecting
- solar
- cell module
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 76
- 238000000034 method Methods 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 description 52
- 229910000679 solder Inorganic materials 0.000 description 35
- 238000004519 manufacturing process Methods 0.000 description 31
- 230000008602 contraction Effects 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 230000000694 effects Effects 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 11
- 229910052709 silver Inorganic materials 0.000 description 9
- 239000004332 silver Substances 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 230000007423 decrease Effects 0.000 description 8
- 238000005476 soldering Methods 0.000 description 8
- 238000001816 cooling Methods 0.000 description 7
- 238000005336 cracking Methods 0.000 description 7
- 239000000945 filler Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910001374 Invar Inorganic materials 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- BAUGPFZKDROCKT-UHFFFAOYSA-N butyl acetate;ethene Chemical compound C=C.CCCCOC(C)=O BAUGPFZKDROCKT-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present invention relates to a solar cell and a solar cell module, and more particularly, to a solar cell in which an interconnector is connected to a current collecting electrode provided on the surface of the solar cell, and a plurality of solar cells by the interconnector
- the present invention relates to a solar cell module to which is connected.
- a solar cell module is formed by connecting a plurality of solar cells.
- a conventional solar cell used in this solar cell module is composed of a semiconductor substrate 11 and current collecting electrodes 15 and 16 provided on the front and back thereof.
- An N-type region 12 and a P-type region 13 are formed on a semiconductor substrate 11 used for a solar cell 20, and a semiconductor junction 14 is formed at an interface between the N-type region 12 and the P-type region 13. .
- a current collecting electrode 15 on the front surface is provided, and on the surface of the P-type region 13, a current collecting electrode 16 on the back surface is provided.
- the current collecting electrode 15 on the front surface is composed of a grid-shaped finger portion 15 b and a bus bar portion 15 a connecting the interconnector 17.
- the current collecting electrode 16 on the back surface is composed of a silver electrode (not shown) for connecting the interconnector 7 and an aluminum current collecting electrode (not shown) formed on almost the entire back surface excluding the silver electrode. It is composed of
- an interconnector 17 as shown in FIGS. 13 and 14 is used to connect a plurality of solar cells 20.
- the interconnector 17 has electrode contact portions 17a and 17b at both ends, and is made of rectangular copper foil or invar (an alloy of iron and nickel) or the like, and its entire surface is covered with solder.
- a plurality of solar cells 20 are connected as shown in FIG. That is, one of the electrode contact portions 17a is disposed over substantially the entire length of the current collecting electrode 15 on the surface of the solar cell 20 on the bus bar portion 15a, and a plurality of portions are joined to the bus bar portion 15a. Connected to the nose bar 15a of the current collecting electrode 15 on the front side.
- the other electrode contact portion 17b is connected to the current collecting electrode 16 on the back by soldering! RU
- one of the electrode contacts 17a of the interconnector 17 connected to the bus bar 15a of the current collecting electrode 15 on the surface of the solar battery cell 20 is referred to in this specification.
- Various types of such solar cell modules have been proposed (for example, see Patent Document 1).
- the solar cell device described in Patent Document 1 uses a stranded wire as an interconnector
- Patent Document 1 Japanese Patent Application Laid-Open No. H11 251613
- soldering is used to connect the electrode contact portion of the interconnector to the current collecting electrode of the solar cell.
- the heat of the soldering raises the temperature of the electrode contact portion of the interconnector and the current collecting electrode of the solar cell, and when the raised temperature returns to normal temperature, the solar cell is formed. It is a well-known fact that a compressive stress is applied to a given semiconductor substrate.
- the only way to increase the cross-sectional area of the interconnector is to increase the thickness of the interconnector.
- the above-mentioned compressive stress applied to the semiconductor substrate increases due to the following two factors.
- the welding between the current collecting electrode on the surface and the interconnector takes a long time, so that the interconnector expands due to thermal expansion, and the compressive stress applied to the semiconductor substrate increases.
- the above-described compressive stress increases, so that a large warpage occurs in the semiconductor substrate, which causes a problem such as cell cracking and electrode peeling, thereby lowering the manufacturing yield. .
- the solar cell device described in Patent Document 1 uses a stranded wire as the interconnector.
- the use of a stranded wire as an interconnector is one solution to the problem described above. Even if a power stranded wire is used, it is still a single linear wire as a whole. I have to say that it stays at a level. In other words, since there is no gap between the current collecting electrode and the interconnector, for example, if an interconnector using a stranded wire whose entire surface is covered with solder is used, the entire surface is covered with a solder.
- the stranded wire that has expanded due to the heat of hot air reflow, a soldering iron, etc. is fixed to the current collecting electrode on the surface in the expanded state. Then, when the temperature increased by heating decreases and the stranded wire shrinks, the stranded wire that should have the effect of reducing the warpage of the semiconductor substrate due to the elongation of the stranded wire by unwinding the stranded wire, It is fixed and cannot be undone. Therefore, when a stranded wire is used as the interconnector, the effect of reducing the warpage of the semiconductor substrate is drastically reduced, and eventually, when the stranded wire shrinks, the semiconductor substrate is warped.
- the stranded wire before the stranded wire exhibits the effect of reducing the warpage of the semiconductor substrate, the stranded wire is fixed to the current collecting electrode on the surface of the solar cell by the solder. It is almost gone. Therefore, if you try to use a stranded wire for the interconnector, Therefore, an interconnector having a special structure in which solder is coated only on the portion that comes into contact with the solder must be used, and an extra process is required for the manufacture of the interconnector, and the cost increases. In addition, the process of processing the stranded wire into the interconnector itself is complicated and time-consuming.
- the present invention has been made to solve the above problems, and even if the thickness of the interconnector is increased to reduce the resistance loss with the increase in the area of the solar cell, In the manufacturing process of the solar cell module, it is possible to prevent the semiconductor substrate of the solar cell from being greatly warped, cracking the cell, peeling off the electrodes, etc., thereby preventing a reduction in manufacturing yield and reducing a resistance loss.
- FF fill factor: photoelectric conversion efficiency
- a solar cell of the present invention made to solve the above problem has a solar cell on which a current collecting electrode is formed, and an interconnector is connected to the current collecting electrode of the solar cell.
- the interconnector is formed with an uneven portion.
- the solar cell module of the present invention is a solar cell module in which a plurality of solar cells are arranged and connected by the solar cell power S interconnectors adjacent to each other. It is characterized in that the interconnector has an uneven portion.
- the above-mentioned solar cell or solar cell module is configured such that at least a part of a portion of the interconnector used for the solar cell or the solar cell, which is located on a front surface or a back surface of the solar cell, is formed in a concave-convex shape. I prefer to.
- the interconnector used for the above-mentioned solar cell module may include a part of a part located on the front surface of the solar cell and a part of a part located on the back surface of the solar cell. Only the part may be formed in an uneven shape. [0015] In the above-described solar cell or solar cell module, since the uneven portion is formed in the interconnector, expansion and contraction of the uneven portion of the interconnector during heating and cooling in the manufacturing process of the solar cell module causes It is unlikely to occur in the direction parallel to the surface of the photovoltaic cells as soon as it occurs along the uneven direction.
- the cross-sectional area of the interconnector is increased, so that the compressive stress is increased in accordance with the thickness, or As the thickness of the interconnect becomes thicker, even though the welding of the surface electrode and the interconnector takes a long time and the expansion of the interconnector becomes large due to thermal expansion, the interconnector may be in contact with the surface of the solar cell. Expansion and contraction in the parallel direction can be suppressed. Therefore, it is possible to prevent the semiconductor substrate of the solar battery cell from being greatly warped, or the cell from being cracked or the electrode from being peeled off during the manufacturing process of the solar battery module.
- the uneven portion formed on the interconnector causes a partial gap between the current collecting electrode on the surface and the interconnector, even if the interconnector is entirely covered with solder, The effect of reducing the warpage of the semiconductor substrate can be sufficiently obtained. Therefore, a decrease in manufacturing yield can be prevented, and the thickness of the interconnect can be increased, so that the resistance loss of the solar cell module can be reduced and the FF can be increased.
- the unevenness formed on the interconnector of the solar cell or the solar cell module may be a corrugated shape or an arched or anti-arched shape. Is also good.
- the shape of these concavities and convexities should be a partial projection type or a partial depression type.
- the pitch of the irregularities formed on the interconnector of the solar cell or the solar cell module is less than the length of one side of the solar cell and the height of the irregularities is 2 mm or less. preferable.
- a flat portion may be formed in the interconnector, and the uneven portion and the flat portion may be alternately formed a plurality of times.
- the plurality of concave and convex portions are formed in the interconnector. For this reason, processing during the manufacturing process of the solar cell module is performed. At the time of thermal cooling, the expansion and contraction force due to the heat of the concave and convex portions is generated along the concave and convex direction, and is hardly generated in the direction parallel to the surface of the solar cell.
- the thickness of the interconnector is increased in order to reduce the resistance loss, even if the compressive stress increases according to the thickness due to the increase in the cross-sectional area of the interconnector, Even if the expansion of the interconnector increases due to thermal expansion due to the time required for welding to the interconnector, expansion and contraction of the interconnector in a direction parallel to the surface of the solar cell can be suppressed. Therefore, in the manufacturing process of the solar cell module, it is possible to prevent the semiconductor substrate of the solar cell from being significantly warped, or the cells from being cracked or the electrodes from being peeled off. Therefore, a decrease in manufacturing yield can be prevented, and the thickness of the interconnector can be increased, so that the resistance loss of the solar cell module can be reduced and the FF can be increased.
- the flat portion is formed by inserting the flat portion between the concavo-convex portions adjacent to the interconnector, the flat portion is formed on the upper surface of the current collecting electrode.
- the interconnector By bonding to the current collector, the interconnector can be pressed and fixed to the current collecting electrode, and the interconnector plays a role of reinforcing the strength of the current collecting electrode. Can be enhanced.
- the presence of the flat portion in the interconnector allows the interconnector to be vacuum-adsorbed and transported, thereby improving the productivity of the solar cell module.
- the above-mentioned uneven portion of the interconnector is formed by independently forming a protrusion-shaped portion having a single rounded top.
- a plurality of protrusion-shaped portions each having a single rounded top are formed, and the plurality of protrusion-shaped portions are formed by inserting a linear shape portion between adjacent ones of the protrusion-shaped portions. U, like to do.
- the linear part is formed on the upper surface of the current collecting electrode.
- the interconnector can be firmly fixed to the current collecting electrode similarly to the flat portion, and the interconnector reinforces the strength of the current collecting electrode. Therefore, the strength of the current collecting electrode can be further enhanced.
- the projection-shaped portion is formed so that the top of the projection-shaped portion is rounded, when the interconnector is molded using a hydraulic press, the molded interconnector is formed. It is possible to suppress a decrease in the productivity of the solar cell or the solar cell module, which is prevented from being wound by a hooking force on a mold.
- the linear portion of the uneven portion of the interconnector is longer than the width of the bottom of the projecting portion of the uneven portion, and Preferably, it is formed to be shorter than the length of the.
- the interconnector is fixedly fixed to the current collecting electrode while maintaining the effect of reducing the warpage of the semiconductor substrate due to the projection-shaped portion of the uneven portion. And the strength of the current collecting electrode can be enhanced.
- the protrusion-shaped portion of the uneven portion of the interconnector has a width at the bottom of the protrusion-shaped portion approximately four times the height of the protrusion-shaped portion. It is preferred to be formed so that.
- expansion and contraction of the protrusion-shaped portion of the uneven portion can be effectively caused along the protrusion direction during heating and cooling in the manufacturing process of the solar cell module.
- expansion and contraction of the interconnector in a direction parallel to the surface of the solar cell can be effectively suppressed. Therefore, the above-described warpage of the semiconductor substrate can be effectively reduced.
- the interconnector is formed such that portions of the solar cell that adhere to the upper surfaces of both ends of the current collecting electrode are flat. . By doing so, the interconnector can be firmly fixed to the front surface or the back surface of the solar cell using the flat portion.
- the solar cell module and the interconnector can be configured such that the solar cell module is sandwiched between a transparent substrate and a back cover. By doing so, the front and back surfaces of the solar cell can be protected.
- a part of the interconnector of the solar cell module may be formed in a linear shape.
- a stress release that relieves various stresses on the interconnector is formed in a portion of the interconnector between adjacent solar cells connected by the interconnector.
- the stress release is a crank-shaped component formed in the interconnector in advance, and has a function of alleviating various stresses applied to the interconnector.
- the stress release is formed in the direction in which the solar cells are arranged in a length of about the thickness of the solar cells.
- the stress release force is formed at a portion between the solar cells of the interconnector, so that a plurality of the solar cells are arranged or a plurality of the arranged solar cells are transparent.
- the stress generated in the interconnector can be released by the interconnector pressing down the edge of the solar cell.
- cell cracking and force of four which are generated when the interconnector presses the edge of the solar cell, can be significantly reduced.
- expansion or contraction occurs due to heating, cooling, or the like, the change in length due to the expansion or contraction can be released in a direction having little effect, and the interconnector expands and contracts in the arrangement direction of the solar cells. Can be suppressed.
- the semiconductor substrate of the solar cell in the manufacturing process of the solar cell module, it is possible to prevent the semiconductor substrate of the solar cell from being significantly warped, or the cells from being cracked or the electrodes from being peeled off.
- a further advantage of the stress release is that after the solar cell module is completed, the interconnector thermally expands due to direct sunlight or the like, or the transparent substrate on the front surface of the solar cell and the back cover can be used. Even if the transparent filler material expands and contracts during this time, it is possible to suppress expansion and contraction of the interconnector in the arrangement direction of the solar cells. Therefore, the reliability of the solar cell module can be improved, and the life can be prolonged.
- the interconnector has a flat edge portion of the solar cell, and irregularities are formed on a front side and a rear side of the interconnector except for the flat portion. It may be configured as follows. Doing something like this Thereby, the interconnector can be firmly fixed to the front and back surfaces of the solar cell using the flat edge portion.
- the solar cell module of the present invention even if the thickness of the interconnector is increased to reduce the resistance loss with the increase in the area of the solar cell, the solar cell module can be used.
- the manufacturing process it is possible to prevent the semiconductor substrate of the solar battery cell from being significantly warped, cell breakage, electrode peeling, and the like, thereby preventing a reduction in manufacturing yield and reducing resistance loss to reduce FF. Can be improved.
- FIG. 1 is a plan view of a solar cell according to a first embodiment.
- FIG. 2 is a sectional view taken along line AA of FIG. 1.
- FIG. 3 is a cross-sectional view of the solar cell module according to the first embodiment.
- FIG. 4 is an enlarged view of an inter-cell portion of an interconnector used in the solar cell module according to the first embodiment.
- FIG. 5 is an explanatory diagram of a reflow method used for manufacturing the solar cell module according to the first embodiment.
- 6 (a) to 6 (h) are explanatory diagrams showing other examples of the shape of the electrode contact portion of the interconnector.
- FIG. 7 is a plan view of a solar cell according to a second embodiment.
- FIG. 8 is a sectional view taken along the line A′-A ′ in FIG. 7.
- FIG. 9 is a cross-sectional view of a solar cell module according to a second embodiment.
- FIG. 10 is a partially enlarged view of FIG.
- FIG. 11 is a diagram showing a shape of an uneven portion of the interconnector.
- FIG. 12 is a view showing the shape of another example of the uneven portion of the interconnector.
- FIG. 13 is a plan view of a conventional solar cell.
- FIG. 14 is a cross-sectional view taken along line BB of FIG. 13.
- FIG. 15 is a cross-sectional view of a conventional solar cell module.
- FIG. 1 is a plan view of a solar cell according to the first embodiment
- FIG. 2 is a cross-sectional view thereof
- FIG. 3 is a cross-sectional view of a solar cell module according to the present embodiment.
- the solar cell is configured by connecting one interconnector 7 to one solar cell 10.
- the solar cell module is configured by connecting a plurality of arranged solar cells 10 in series using an interconnector 7. That is, the solar cell module includes, in the arrayed solar cells, the other end 7b of the interconnector 7 having one end 7a connected to the surface of one adjacent solar cell and the other end of the adjacent solar cell. It is configured by connecting to the back surface.
- a solar cell 10 used in the solar cell and the solar cell module according to the present embodiment includes a semiconductor substrate 1 and a current collecting electrode 5 on the surface formed on the front and back surfaces thereof. And a current collecting electrode 6 on the back surface.
- the semiconductor substrate 1 is formed of a P-type silicon substrate such as single-crystal silicon or polycrystalline silicon having a square shape with a side of about 155 mm and a thickness of about 0.2 to 0.3 mm.
- a PZN junction is formed on the surface of the P-type silicon substrate. Specifically, the formation of the PZN junction is performed by applying a solution containing N-type impurities to the surface of the P-type silicon substrate. Alternatively, the PZN junction is formed by placing this P-type silicon substrate in the gas phase and thermally diffusing N-type impurities at a temperature of about 800 to 900 ° C to the surface of the P-type silicon substrate. This is performed by forming an impurity diffusion layer on the substrate.
- the N-type diffusion surface thus formed is referred to as the front surface, which is the light receiving surface of the solar cell 10, and the non-diffusion surface is referred to as the back surface. That is, an N-type region 2 and a P-type region 3 are formed in the semiconductor substrate 1, and an interface between the N-type region 2 and the P-type region 3 is formed. A semiconductor junction 4 is formed at this time. It is desirable to form an antireflection film such as a metal oxide on the surface that is the light receiving surface.
- the semiconductor substrate 1 may be formed of single crystal gallium arsenide or the like other than silicon.
- a collecting electrode 5 on the front surface is formed on the surface of the N-type region 2, and a collecting electrode on the back surface is formed on the surface of the P-type region 3, as shown in FIGS. Electrode 6 is formed.
- the collecting electrode 5 on the surface is composed of a grid-like finger portion 5b and a bus bar portion 5a for connecting the interconnector 7.
- the current collecting electrode 5 on the front surface and the current collecting electrode 6 on the rear surface are specifically formed as follows. That is, in the electrode forming step, the light-receiving surface of the semiconductor substrate 1 is patterned in a grid shape with a metal or a substance similar thereto as the current collecting electrode 5, and the current is collected using a vacuum deposition method or a screen printing method. The electrode 5 is formed. A metal or a substance similar thereto is patterned as a current collecting electrode 6 on substantially the entire back surface, and the current collecting electrode 6 is formed using a vacuum deposition method or a screen printing method.
- the current collecting electrode 5 on the front surface is composed of the bus bar portion 5a for connecting the interconnector 7, and the grid-like finger portion 5b branched and formed to cross the bus bar portion 5a.
- the two busbar portions 5a are formed in parallel so as to cross substantially the entire surface of the semiconductor substrate 1.
- a plurality of finger portions 5b are formed over substantially the entire length of the substrate 1 so as to intersect the bus bar portion 5a at right angles.
- the width of the bus bar portion 5a is, for example, about 2 mm, and the width of the finger portion 5b is, for example, about 0.2 mm.
- the current collecting electrode 5 on this surface is, for example, screen-printed with silver powder, glass frit, a binder, and a paste having a force such as a solvent and baked at a temperature of about 700 to 800 ° C. It is formed by coating.
- the current collecting electrode 6 on the back surface is composed of a silver electrode (not shown) for connecting the interconnector 7, and a current collecting aluminum electrode (not shown) formed on almost the entire surface except the silver electrode.
- the silver electrode is covered with a solder layer.
- the interconnector 7 is connected to the solar cell 10 to form a solar cell as shown in FIGS. 1 and 2. Further, by arranging a plurality of solar cells and connecting them in series, a solar cell module as shown in FIG. 3 is formed. The interval between the solar cells 10 in the solar cell module is about 2 to 3 mm. As shown in FIG. 3, the interconnector 7 includes one electrode contact portion 7a and the other electrode contact portion 7b with the inter-cell portion 7c interposed therebetween. When the interconnector 7 is viewed from the side, the shape of the interconnector 7 is such that one electrode contact portion 7a is formed higher than the other electrode contact portion 7b and is formed in a step shape.
- Each of the one electrode contact portion 7a and the other electrode contact portion 7b has a shape which is bent up and down in a wavy shape over the entirety. Also, two edge portions 7d, 7d of one electrode contact portion 7a of the interconnector 7 connected to the bus bar portion 5a of the current collecting electrode 5 on the front surface of the solar cell 10 and the back surface of the solar cell 10 The two edge portions 7e and 7e of the other electrode contact portion 7b of the interconnector 7 connected to the collecting electrode 6 have a flat shape. By doing so, it is possible to firmly adhere to the solar cell 10 while maintaining the effect of bending the electrode contact portions 7a and 7b of the interconnector 7 up and down.
- the interconnector 7 is formed of a rectangular copper foil, invar, or the like.
- a copper wire or an Invar wire having a width of 2 mm and a thickness of 0.15 to: L Omm is immersed in a solder bath having a desired composition, and wound at a constant speed. put out.
- one electrode contact portion 7a and the other electrode contact portion 7b of the interconnector 7 are bent up and down in a wavy manner over the entire length thereof.
- the pitch p of the wavy bent portion needs to be shorter than the length of the bus bar portion 5a, and is set to about 3.5 mm in the present embodiment.
- the height q of the peak is set to about 0.4 mm in the present embodiment, which is desirably 2 mm or less from a practical point of view.
- a stress release having a shape as shown in FIG. 4 is formed in the inter-cell portion 7c of the interconnector 7.
- the stress release is a crank-shaped component formed in the interconnector 7 in advance, and has a function of relieving stresses such as various stresses applied to the interconnector 7 by escaping in a direction having less influence. .
- This stress release is formed in the direction of arrangement of the solar cells 10 so as to have a length of about the thickness of the solar cells 10.
- the drop height X is about lmm and the drop width y is about 0.5 mm in FIG. Since the interval between the solar cells 10 is about 2 to 3 mm, the drop height X and the drop width y are determined by the thickness of the solar cells 10 and the interconnect. The thickness of the cutter 7 can be sufficiently covered.
- the height z of the play portions 7f and 7g which preferably include the play portions 7f and 7g before and after the stress release, is set to about 0.1 mm.
- the above interconnector 7 is connected to solar cell 10 to form a solar cell. That is, as shown in FIGS. 1 and 2, the lower end of the valley portion of one of the corrugated electrode contact portions 7a of the interconnector 7 is brought into contact with the surface of the bus bar portion 5a of the solar cell 10a, The contact portion is spot-connected using solder or the like to form a solar cell.
- a solar cell module is formed as shown in FIG. That is, first, a plurality of solar cells 10 with the interconnector 7 attached to the surface are arranged. Then, the other electrode contact portion 7b in the form of a corrugated shape covered with solder of the interconnector 7 in which the one electrode contact portion 7a is already bonded to the bus bar portion 5a of one of the adjacent solar cells 1 Oa The upper end of the crest portion is set so as to be in contact with the silver electrode covered with solder on the current collecting electrode 6 on the back surface of the other solar cell 10b adjacent to each other.
- a method of connecting the interconnector 7 to the solar cell 10 in addition to the above-mentioned method, there is a reflow method, a method using a soldering iron, or the like.
- the reflow method instead of blowing hot air when melting the solder, as shown in Fig. 5, the interconnector 7 and the solar cell 10 are sandwiched between the SUS plates 8 heated to a high temperature to melt the solder. Is the way.
- a solar cell module it is necessary to protect the front and back surfaces of the solar cell 10. Therefore, as a solar cell module product, a plurality of solar cells 10 provided with the interconnector 7 described above are used.
- the solar cell module is formed between the transparent substrate and the back cover.
- the front surface which is the light receiving surface of the solar cell 10
- a transparent plate such as a glass plate
- a back cover with the transparent substrate facing the transparent substrate.
- a super straight system in which a plurality of provided solar cells are sealed is generally used.
- the transparent filler for example, PVB (polybutyrol), which has a small decrease in light transmittance, and EVA (ethylene buracetate) excellent in metahumidity are used.
- one electrode contact portion 7a and the other electrode contact portion 7b of interconnector 7 are configured to bend up and down in a wave shape.
- the expansion and contraction of each bent portion of the one electrode contact portion 7a or the other electrode contact portion 7b occurs along the bent direction and hardly occurs in the arrangement direction of the solar cells 10 . Therefore, as the thickness of the interconnector 7 is increased in order to reduce the resistance loss, the cross-sectional area of the interconnector 7 is increased, and the compressive stress applied to the semiconductor substrate 1 is increased in accordance with the thickness.
- a stress release is formed in the inter-cell portion 7c of the interconnector 7, and play is provided before and after the stress release. Therefore, when arranging a plurality of solar cells or enclosing the arranged plurality of solar cells between a transparent substrate and a back cover with a transparent filler, the interconnector 7 is connected to the edge of the solar cell 10. By pressing down, the stress generated in the interconnector 7 can be released. For this reason, cell breaks, splinters, and the like that occur when the interconnector 7 presses the edge of the solar cell 10 can be significantly reduced.
- the expansion of the interconnector 7 due to thermal expansion is large, in combination with the fact that the one electrode contact portion 7a and the other electrode contact portion 7b of the interconnector 7 are formed to bend up and down in a wave shape.
- expansion and contraction of the interconnector 7 in the arrangement direction of the solar cells 10 can be suppressed. For this reason, it is possible to prevent the semiconductor substrate 1 of the solar cell 10 from being significantly warped, cracking the cell, peeling off the electrode, or the like during the manufacturing process of the solar cell module.
- the interconnector 7 thermally expands due to direct sunlight or the like after completion of the solar cell module, or if the transparent filler material expands and contracts between the front transparent substrate and the back cover, The expansion and contraction of 7 in the arrangement direction of the solar cells 10 can be suppressed. Therefore, the reliability of the solar cell module can be improved and the life can be prolonged.
- the vertical direction and the arrangement direction of the solar cells 10 due to the strain and the like generated during the manufacturing process and after the completion of the solar cell module. Even if the tension is applied to the solar battery cell 1, it can be absorbed or reduced, and the advantages of the stress release described above can be more effectively exerted.
- the electrode contact portions 7a and 7b of the interconnector 7 are bent up and down to process the shapes of the electrode contact portions 7a and 7b.
- the shape of the electrode contact portions 7a and 7b is not limited to this, and any shape may be adopted as long as the shape is uneven.
- FIGS. 6A to 6H schematically show other examples of the shapes of the electrode contact portions 7a and 7b. It is. For example, as shown in FIG. 6 (a), semi-circles are continuously arranged in a row, and are arch-shaped, anti-arch shaped as shown in FIG. 6 (f), or partially projecting or You may use a partially concave shape!
- the entirety of one electrode contact portion 7a and the other electrode contact portion 7b of the interconnect connector 7 is provided with an uneven portion.
- only one electrode contact portion 7a or the other electrode contact portion 7b may be provided, or the one electrode contact portion 7a or the other electrode contact portion 7b, or an uneven portion may be provided only on a part of both.
- the inter-cell portion 7c of the inter-connector 7 has a shape of the force inter-cell portion 7c forming a stress release.
- the present invention is not limited to this, and may be, for example, a linear shape.
- FIG. 7 is a plan view of the solar cell according to the present embodiment
- FIG. 8 is a cross-sectional view taken along line A′-A ′ of FIG. 7
- FIG. 3 is a cross-sectional view of the solar cell module according to the present embodiment. is there.
- the solar cell is configured by connecting one interconnector 7 to one solar cell 10.
- the solar cell module is configured by connecting a plurality of arranged solar cells 10 in series using an interconnector 7. That is, the solar cell module is configured by arranging a plurality of the above solar cells, and connecting the other end 7b of the interconnector 7 having one end 7a connected to the front surface of the solar cell to the back surface of the adjacent solar cell. Being done.
- a solar cell 10 used in the solar cell and the solar cell module according to the present embodiment includes a semiconductor substrate 1, a current collecting electrode 5 formed on the front and back surfaces, and a back surface.
- the current collecting electrode 6 is composed of:
- the semiconductor substrate 1 is formed of a P-type silicon substrate such as single-crystal silicon or polycrystalline silicon having a square shape with a side of about 155 mm and a thickness of about 0.24 mm.
- This P-type silicon A PZN junction is formed on the surface of the substrate. Specifically, the formation of the PZN junction is performed by applying a solution containing N-type impurities to the surface of the P-type silicon substrate. Alternatively, the PZN junction is formed by placing this P-type silicon substrate in the gas phase and thermally diffusing N-type impurities at a temperature of about 800 to 900 ° C to the surface of the P-type silicon substrate. This is performed by forming an impurity diffusion layer on the substrate.
- the N-type diffusion surface thus formed is referred to as the front surface, which is the light receiving surface of the solar cell 10, and the non-diffusion surface is referred to as the back surface. That is, the N-type region 2 and the P-type region 3 are formed in the semiconductor substrate 1, and the semiconductor junction 4 is formed at the interface between the N-type region 2 and the P-type region 3. It is desirable to form an antireflection film such as a metal oxide on the surface that is the light receiving surface.
- the semiconductor substrate 1 may be formed of single crystal gallium arsenide or the like other than silicon.
- the current collecting electrode 5 on the front surface is formed on the surface of the N-type region 2, and the collecting electrode 5 on the rear surface is formed on the surface of the P-type region 3, as shown in FIGS. Electrode 6 is formed.
- the collecting electrode 5 on the surface is composed of a grid-like finger portion 5b and a bus bar portion 5a for connecting the interconnector 7.
- the current collecting electrode 5 on the front surface and the current collecting electrode 6 on the rear surface are specifically formed as follows. That is, in the electrode forming step, the light-receiving surface of the semiconductor substrate 1 is patterned in a grid shape with a metal or a substance similar thereto as the current collecting electrode 5, and the current is collected using a vacuum deposition method or a screen printing method. The electrode 5 is formed. A metal or a substance similar thereto is patterned as a current collecting electrode 6 on substantially the entire back surface, and the current collecting electrode 6 is formed using a vacuum deposition method or a screen printing method.
- the current collecting electrode 5 on the front surface is composed of the bus bar portion 5a for connecting the interconnector 7, and the grid-like finger portion 5b branched and formed to cross the bus bar portion 5a.
- the two busbar portions 5a are formed in parallel so as to cross substantially the entire surface of the semiconductor substrate 1.
- a plurality of finger portions 5b are formed over substantially the entire length of the substrate 1 so as to intersect the bus bar portions 5a at right angles.
- the width of the bus bar part 5a is, for example, about 2 mm, and the width of the finger part 5b is, for example, about 0.2 mm.
- the current collecting electrode 5 on this surface is screen-printed, for example, with silver powder, glass frit, a binder, and a paste such as a solvent, and baked at a temperature of about 700 to 800 ° C. It is formed by coating with a solder layer.
- the current collecting electrode 6 on the back surface includes a silver electrode (not shown) for connecting the interconnector 7 and a current collecting aluminum electrode (not shown) formed on almost the entire surface except the silver electrode.
- the silver electrode is covered with a solder layer.
- the interconnector 7 is connected to the solar cell 10 to form a solar cell as shown in FIGS. 7 and 8.
- a solar cell module as shown in FIG. 9 is formed.
- the interval between the solar cells 10 in the solar cell module is about 2 to 3 mm.
- the interconnector 7 is formed of a copper wire or an invar wire having a width of 2 mm and a thickness of 0.3 mm. As shown in Figs. 8 and 9, the inter-cell portion 7c is interposed therebetween. It is composed of one electrode contact 7a and the other electrode contact 7b. One electrode contact portion 7a is connected to the bus bar portion 5a of the current collecting electrode 5 on the surface of the solar cell 10. The other electrode contact portion 7b is connected to the current collecting electrode 6 on the back surface of the solar cell 10. When the interconnector 7 is viewed from the side, the shape of the interconnector 7 is such that one electrode contact portion 7a is formed in a step shape at a position higher than the other electrode contact portion 7b!
- the one electrode contact portion 7a and the other electrode contact portion 7b are composed of an uneven portion 7h and a flat portion 7k.
- the uneven portion 7h and the flat portion 7k are formed by inserting the flat portion 7k between the plurality of uneven portions 7h. That is, the uneven portions 7h and the flat portions 7k are alternately formed.
- the flat portion 7k has a flat plate shape as shown in FIG.
- the uneven portion 7h includes a protruding portion 7i and a linear portion 7j.
- the projecting portion 7i and the linear portion 7j include a plurality of projecting portions 7i formed of one projection, and the plurality of projecting portions 7i are located between adjacent projecting portions 7i. Are inserted and arranged. That is, the projecting portions 7i and the linear portions 7j are formed alternately.
- the concavo-convex portion 7h is formed by a plurality of protruding portions 7i, but may be formed by only one protruding portion 7i without using the linear portion 7j.
- the protruding shape portion 7i has a rounded triangular shape at the top, an arc swelling upward with a radius of curvature r of about 0.1 mm, and a hem at the bottom. Bulging downward It has an arc shape.
- the height H of the projection 7i is 0.4 mm, and the width Wl between both bottoms of the bottom is 1.5 mm.
- the linear portion 7j has a flat plate shape, like the flat portion 7k.
- the thickness t of the interconnector 7 is 0.3 mm as described above.
- one concavo-convex portion 7h is composed of four protruding portions 7i and three linear portions 7j.
- the number of the protruding portions 7i that constitute one uneven portion 7h is not limited to this, but the total number is 20 to 40 for each of the electrode contact portions 7a and 7b of the interconnector 7. Is one guideline. Therefore, one interconnector 7 has a guideline of 40 to 80 connectors. Further, as shown in FIG. 12, the number of the protrusion-shaped portions 7i constituting one uneven portion 7h is different depending on each of the uneven portions 7h.
- the number of uneven portions 7h formed on the electrode contact portions 7a, 7b may be the same as each of the electrode contact portions 7a, 7b, but is not limited thereto.
- the number of electrode contact portions 7a may be different from five, and the other electrode contact portion 7b may be six.
- the number of the protruding portions 7i constituting one uneven portion 7h may be different between the one electrode contact portion 7a and the other electrode contact portion 7b, or the length of the flat portion 7k may be different. May be different between the one electrode contact portion 7a and the other electrode contact portion 7b.
- the pitch P of the plurality of protrusions 7i is 3.5 mm, so the length W2 of the linear portion 7j is 2 mm. That is, the linear shape portion 7j is formed such that the length W2 of the linear shape portion 7j is longer than the width W1 between both bottoms of the bottom of the projection shape portion 7i. Further, the linear portion 7j is formed shorter than the flat portion 7k, and can be distinguished from the flat portion 7k.
- the edge portions 71 where the electrode contact portions 7a and 7b are adhered to the upper surfaces at both ends of the current collecting electrode 5 on the front surface and the current collecting electrode 6 on the rear surface, respectively, are flat as shown in FIGS. It is formed in a shape.
- the uneven portion 7h and the flat portion 7k described above are formed to have substantially the same length. However, this is not always necessary.For example, the ratio between the length of the uneven portion 7h and the length of the flat portion 7k is adjusted according to the situation of the current collecting electrode 5 on the front surface and the current collecting electrode 6 on the rear surface.
- the current collecting electrode 5 has a ratio of 8: 7
- the current collecting electrode 6 on the back has a ratio of 10:11. Is also good.
- the value obtained by integrating the lengths of all the concave and convex portions 7h formed on the electrode contact portions 7a and 7b of the interconnector 7 is substantially equal to the value obtained by integrating the lengths of all the flat portions 7k. It is desirable to form the uneven portion 7h and the flat portion 7k in such a way as to make it easier.
- the interconnector 7 As a specific method of manufacturing the interconnector 7, first, a copper wire or an invar wire having a width of ⁇ mm and a thickness of 0.3mm is immersed in a solder bath having a desired composition, and is wound at a constant speed. Pull out. Then, the interconnector 7 whose surface is covered with solder is bent to form an electrode contact constituted by the uneven portion 7h composed of the above-mentioned protrusion 7i and the linear portion 7j, a flat portion 7k and an edge portion 71. Parts 7a and 7b are formed.
- the inter-cell portion 7c of the interconnector 7 forms a stress release having a shape as shown in FIGS.
- the stress release is a crank-shaped component formed in the interconnector 7 in advance, and has a function of relieving stresses such as various stresses applied to the interconnector 7 by releasing them in a direction with little effect.
- RU This stress release is formed in the direction of arrangement of the solar cells 10 so as to have a length of about the thickness of the solar cells 10.
- the interconnector 7 is connected to the solar cell 10 to form a solar cell. That is, as shown in FIGS. 7 to 9, the flat portion 7 k, the linear portion 7 j and the edge portion 71 formed on one electrode contact portion 7 a of the interconnector 7 are combined with the bus bar part 5 a of the solar cell 10. And soldered to the surface.
- This bonding is specifically performed as follows. First, one electrode contact portion 7a of the interconnector 7 whose entire surface is covered with solder is set so as to be in contact with the bus bar portion 5a of the solar cell 10 also covered with solder. Then, hot air of about 400 ° C is blown onto the entire interconnector 7 to melt the solder in the parts that are in contact with each other, and then cool and solidify the interconnector 7 and the solar cells 10. And are integrated.
- a solar cell module as shown in FIG. 9 is formed. That is, first, a plurality of solar cells 10 having one electrode contact portion 7a of the interconnector 7 attached to the surface are arranged.
- the flat portion 7k formed on the other electrode contact portion 7b of the interconnector 7 has a linear shape.
- the portion 7j and the edge portion 71 are brought into contact with the surface of the current collecting electrode 6 on the back surface of the adjacent solar cell 10 and are adhered with solder.
- This bonding is specifically performed as follows. First, the other electrode contact portion 7b of the interconnector 7, which is attached to the bus bar portion 5a of the solar cell 10 and whose entire surface is covered with solder, is covered with the same solder of the adjacent solar cell 10. It is set so as to be in contact with the current collecting electrode 6 on the back surface. Then, hot air of about 400 ° C is blown to the entire interconnector 7 to melt the solder in the parts that are in contact with each other, and then cool and solidify to form the interconnector 7 and the solar cell. And 10 are integrated to form a solar cell module.
- the interconnector 7 and the solar cell are heated by a SUS plate heated to a high temperature (see reference numeral 8 shown in FIG. 5 of the first embodiment). This is a method of sandwiching the pond cell 10 and melting the solder.
- a plurality of solar cells 10 provided with the interconnector 7 described above are used as a solar cell module product.
- the solar cell module is formed between the transparent substrate and the back cover.
- the front surface which is the light receiving surface of the solar cell 10
- a transparent plate such as a glass plate and the back cover with the transparent substrate facing the transparent substrate.
- a super-straight method for enclosing a plurality of solar cells 10 provided with is used.
- the transparent filler for example, PVB (polybutyrol), which has a small decrease in light transmittance, and EVA (ethylene butyl acetate) excellent in meta-humidity are used.
- the interconnector 7 is formed with a plurality of uneven portions 7h having the protruding portions 7i. Therefore, during heating and cooling in the manufacturing process of the solar cell module, the expansion and contraction of the protrusions 7i due to heat hardly occurs in the protrusion direction and hardly occurs in the direction parallel to the surface of the solar cell 10 immediately. Therefore, as the thickness of the interconnector 7 is increased to reduce the resistance loss, the cross section of the interconnector 7 is increased. Due to the increase in the product, the expansion and contraction of the interconnector 7 in the direction parallel to the surface of the solar cell 10 can be suppressed even if the compressive stress increases according to the thickness.
- the interconnector 7 is oriented parallel to the surface of the solar cell 10. The expansion and contraction can be suppressed. Therefore, it is possible to prevent the semiconductor substrate 1 of the solar battery cell 10 from being significantly warped, or the cells from being cracked or the electrodes being peeled off during the manufacturing process of the solar battery module. Therefore, a decrease in manufacturing yield can be prevented, and the thickness of the interconnector 7 can be increased, so that the resistance loss of the solar cell module can be reduced and the FF can be increased.
- a flat portion 7k is inserted between the concavo-convex portions 7h of the interconnector 7 adjacent to each other.
- the interconnector 7 can be firmly fixed to the collecting electrodes 5 and 6, and the interconnector 7 serves to reinforce the strength of the collecting electrodes 5 and 6.
- the strength of the electrodes 5, 6 can be increased.
- the presence of the flat portion 7k in the interconnector 7 makes it possible to carry by vacuum suction and transfer, thereby improving the productivity of the solar cell module.
- the uneven portion 7h of the interconnector 7 is formed by inserting a linear shape portion 7j between a plurality of projecting shape portions 7i adjacent to each other. Therefore, by bonding this linear portion 7j to the upper surfaces of the current collecting electrodes 5 and 6, the interconnector 7 can be fixedly fixed to the current collecting electrodes 5 and 6 in the same manner as the flat portion 7k. Further, since the interconnector 7 plays a role of reinforcing the strength of the current collecting electrodes 5 and 6, the strength of the current collecting electrodes 5 and 6 can be further enhanced.
- the edge portion 71 has a flat shape, the interconnector 7 can be firmly fixed to the current collecting electrodes 5 and 6 of the solar cell using this flat portion. .
- the linear shape portion 7j is formed such that the length W2 of the linear shape portion 7j is longer than the width W1 between both bottom portions of the bottom of the projection shape portion 7i. Therefore, while maintaining the effect of reducing the warpage of the semiconductor substrate 1 due to the projections 7i of the projections and depressions 7h, the interconnector 7 can be firmly fixed to the current collecting electrode while the current collecting is performed. The strength of the electrodes 5 and 6 can be increased.
- a stress release is formed in inter-cell portion 7 c of interconnector 7. Therefore, when arranging a plurality of solar cells, or when encapsulating the arranged plurality of solar cells between a transparent substrate and a back cover with a transparent filler, the interconnector 7 is connected to the solar cells 10.
- the stress generated in the interconnector 7 can be released by holding down the edge. Therefore, it is possible to greatly reduce cell cracking, force 4 and the like that occur when the interconnector 7 presses the edge of the solar cell 10. Further, even if the expansion of the interconnector 7 increases due to thermal expansion, expansion and contraction of the interconnector 7 in the direction in which the solar cells 10 are arranged can be suppressed.
- the semiconductor substrate i of the solar cell: LO it is possible to prevent the semiconductor substrate i of the solar cell: LO from causing a large warp, a cell crack, an electrode peeling, and the like. Furthermore, even after the completion of the solar cell module, even if the interconnector 7 thermally expands due to direct sunlight or the like, expansion and contraction of the interconnector 7 in the arrangement direction of the solar cell 10 can be suppressed. Similarly, even if the transparent filling material expands and contracts between the front transparent substrate and the back cover, expansion and contraction of the interconnector 7 in the arrangement direction of the solar cell 10 can be suppressed. Therefore, the reliability of the solar cell module can be improved and the life can be prolonged.
- the inter-cell portion 7c of the inter-connector 7 has a shape of the force inter-cell portion 7c forming a stress release.
- the present invention is not limited to this, and may be, for example, a linear shape.
- the electrode contact portions 7a and 7b of the interconnector 7 are formed with the concavo-convex portions 7h and the flat portions 7k each including the protruding portions 7i and the linear portions 7j. It has been done.
- the inventor has performed various trials in the process of deriving such a configuration plan, and the details of the trials will be described next. In this trial, for convenience, reference numerals of the respective components of the solar cell and the solar cell module according to the present embodiment are used.
- a semiconductor substrate made of a P-type silicon substrate such as monocrystalline silicon or polycrystalline silicon having a square shape of about 155 mm on a side and a thickness of about 0.24 mm and an interconnector having a width of 2 mm were used.
- the present invention relates to a solar cell module configured to be used.
- the thickness of the interconnector 7 was set to 0.3 mm, and the electrode contact portions 7a and 7b of the interconnector 7 were provided with uneven portions.
- a continuous sine curve with a peak-to-peak height of 0.4mm and a pitch of 3.5mm was formed.
- the continuous sine curve with a peak-to-peak height of 0.4 mm and a pitch of 3.5 mm formed at the electrode contact parts 7a and 7b has a height of 0.4 mm and a width between the bottom skirts of 3 mm.
- the top of 5mm can be regarded as a convex waveform close to a rounded triangular waveform. In this convex waveform, the width between the bottom hem portions is about 9 times the height, so that the width between the bottom hem portions is too long compared to the height, and the width of the interconnector 7 is reduced.
- the configuration of the interconnector 7 is the configuration of the present embodiment described above.
- the semiconductor substrate 1 does not warp and the adhesive strength between the interconnector 7 and the current collecting electrodes 5 and 6 can be ensured.
- the height H of the projection 7i is 0.4 mm, and the width W1 between the bottoms of the bottom is 1.5 mm, which is different from the trial 1.
- the width W1 between the bottoms of the bottom of the part 7i is about four times the height H, and the expansion and contraction force of the interconnector 7 due to the heat generated by the interconnector 7 It is unlikely to occur in a direction parallel to the surface of the solar cell 1 and is considered to be due to the body.
- the interconnector 7 of Trial 2 was excellent in the above-described embodiment, which was not easily adopted. That is, the projecting portion 7i of the uneven portion 7h of the interconnector 7 is formed such that the width between both bottoms of the bottom of the projecting portion 7i is approximately four times the height of the projecting portion 7i.
- the expansion and contraction of the projection-shaped portion 7i of the uneven portion 7h can be effectively caused along the projection direction. Therefore, the expansion and contraction of the interconnector 7 in the direction parallel to the surface of the solar cell 10 can be effectively suppressed, and the warpage of the semiconductor substrate 1 can be effectively reduced, and the productivity can be reduced. Can be prevented from being hindered.
- the top of the protruding portion 7i is formed in an arc shape having a radius of curvature r of about 0.1 mm because the molded interconnector is formed by using a hydraulic press. 7 is also a force that is effective in ensuring that the mold has no catching force.
- the height of the protruding portion 7i formed in the interconnector 7 is preferably low. Therefore, in Trial 3, the thickness of the interconnector was set to 0.3 mm, and the width between the bottom hem portions of the electrode contact portions 7a and 7b of the interconnector 7 was approximately four times the height of the projection-shaped portion 7i. In this state, a projection 7i having a height of 0.2 mm was formed. That is, the protrusion 7i has a height of 0.2 mm and a width between both bottom hem portions of 0.75 mm. In this state, although warpage occurs somewhat, warpage can be suppressed by setting the pitch of the protruding portions 7i to 2.5 mm.
- the height of the projection 7i is smaller than 0.2 mm, the interconnector 7 having the projection 7i formed thereon is bonded to the current collecting electrodes 5 and 6 of the solar battery cell 10. Then, when the entire surface of the interconnector 7 is covered with a solder and adhered to the current collecting electrodes 5 and 6 of the solar cell 10, the uneven portions 7 h formed on the electrode contact portions 5 and 6 of the interconnector 7 are formed. Solder clogged the space formed between the projection 7i and the surfaces of the current collecting electrodes 5 and 6, and the effect of forming the irregularities 7h on the electrode contact portions 7a and 7b of the interconnect connector 7 was exhibited. There was a problem that it was not possible. Therefore, considering the productivity of the solar cell module, The height of the protrusion 7i of the uneven portion 7h formed on the electrode contact portions 7a and 7b of one connector 7 is desirably 0.2 mm or more.
- the interconnector 7 of the present embodiment when the collector electrodes 5, 6 and the interconnector 7 are bonded to each other, the interconnector 7 that is entirely covered with a solder can be used.
- the space formed between the projection-shaped portion 7i of the uneven portion 7h formed on 7 and the collecting electrodes 5 and 6 can be maintained, and the effect of reducing the warpage of the semiconductor substrate 1 can be sufficiently obtained. .
- the solar cell and the solar cell module of the present invention can be applied to the semiconductor substrate of the solar cell in the manufacturing process of the solar cell or the solar cell module even if the thickness of the interconnector is increased in order to reduce the resistance loss. It can be effectively used to prevent large warpage, cell cracking, electrode peeling, and the like, and to prevent a reduction in manufacturing yield.
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004-114684 | 2004-04-08 | ||
JP2004114684A JP2005302902A (ja) | 2004-04-08 | 2004-04-08 | 太陽電池及び太陽電池モジュール |
JP2004-261194 | 2004-09-08 | ||
JP2004261194A JP2006080217A (ja) | 2004-09-08 | 2004-09-08 | 太陽電池及び太陽電池モジュール |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005098969A1 true WO2005098969A1 (ja) | 2005-10-20 |
Family
ID=35125372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/005910 WO2005098969A1 (ja) | 2004-04-08 | 2005-03-29 | 太陽電池及び太陽電池モジュール |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2005098969A1 (ja) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006310745A (ja) * | 2005-03-29 | 2006-11-09 | Kyocera Corp | 太陽電池モジュール及びその製造方法 |
JP2008066695A (ja) * | 2006-08-09 | 2008-03-21 | Kyocera Corp | 太陽電池モジュールおよび太陽電池モジュールの製造方法 |
WO2009049572A1 (de) * | 2007-10-19 | 2009-04-23 | Solarwatt Ag | Leitungsverbinder für solarzellen von plattenförmigen solarmodulen |
WO2010091680A2 (de) | 2009-02-16 | 2010-08-19 | Q-Cells Se | Solarzellenstring und solarmodul mit derartigen solarzellenstrings |
WO2011016483A1 (ja) * | 2009-08-07 | 2011-02-10 | シャープ株式会社 | 太陽電池モジュール |
WO2012028537A3 (fr) * | 2010-08-30 | 2012-11-29 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Cellule photovoltaïque avec conducteurs discontinus |
US8334453B2 (en) * | 2007-12-11 | 2012-12-18 | Evergreen Solar, Inc. | Shaped tab conductors for a photovoltaic cell |
JP2013239716A (ja) * | 2006-09-06 | 2013-11-28 | Board Of Trustees Of The Univ Of Illinois | 2次元デバイスアレイ |
WO2014033884A1 (ja) * | 2012-08-30 | 2014-03-06 | 三洋電機株式会社 | 太陽電池モジュールの配線材、太陽電池モジュール、及び太陽電池モジュールの製造方法 |
CN103797588A (zh) * | 2011-09-05 | 2014-05-14 | 迪睿合电子材料有限公司 | 太阳能电池模块的制造方法、太阳能电池模块和焊带的连接方法 |
CN104221161A (zh) * | 2012-03-23 | 2014-12-17 | 三洋电机株式会社 | 太阳能电池组件和太阳能电池组件的制造方法 |
US9966487B2 (en) | 2015-12-14 | 2018-05-08 | Solarcity Corporation | Strain relief apparatus for solar modules |
US10355113B2 (en) | 2004-06-04 | 2019-07-16 | The Board Of Trustees Of The University Of Illinois | Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06275858A (ja) * | 1993-03-19 | 1994-09-30 | Taiyo Yuden Co Ltd | 光起電力モジュールとその製造方法 |
JPH11177117A (ja) * | 1997-12-12 | 1999-07-02 | Showa Shell Sekiyu Kk | 太陽電池モジュール |
JPH11251613A (ja) * | 1998-02-27 | 1999-09-17 | Kyocera Corp | 太陽電池装置 |
JPH11312820A (ja) * | 1998-04-28 | 1999-11-09 | Sanyo Electric Co Ltd | 太陽電池モジュール及びその製造方法 |
JP2001030999A (ja) * | 1999-07-01 | 2001-02-06 | Space Syst Loral Inc | ソーラセルアセンブリ |
JP2001237444A (ja) * | 2000-02-22 | 2001-08-31 | Fuji Electric Co Ltd | 薄膜光電変換装置の配線接続方法 |
JP2001352089A (ja) * | 2000-06-08 | 2001-12-21 | Showa Shell Sekiyu Kk | 熱膨張歪み防止型太陽電池モジュール |
JP2002222978A (ja) * | 2000-11-21 | 2002-08-09 | Sharp Corp | 太陽電池モジュール、交換用太陽電池セル、及び太陽電池セルの交換方法 |
-
2005
- 2005-03-29 WO PCT/JP2005/005910 patent/WO2005098969A1/ja active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06275858A (ja) * | 1993-03-19 | 1994-09-30 | Taiyo Yuden Co Ltd | 光起電力モジュールとその製造方法 |
JPH11177117A (ja) * | 1997-12-12 | 1999-07-02 | Showa Shell Sekiyu Kk | 太陽電池モジュール |
JPH11251613A (ja) * | 1998-02-27 | 1999-09-17 | Kyocera Corp | 太陽電池装置 |
JPH11312820A (ja) * | 1998-04-28 | 1999-11-09 | Sanyo Electric Co Ltd | 太陽電池モジュール及びその製造方法 |
JP2001030999A (ja) * | 1999-07-01 | 2001-02-06 | Space Syst Loral Inc | ソーラセルアセンブリ |
JP2001237444A (ja) * | 2000-02-22 | 2001-08-31 | Fuji Electric Co Ltd | 薄膜光電変換装置の配線接続方法 |
JP2001352089A (ja) * | 2000-06-08 | 2001-12-21 | Showa Shell Sekiyu Kk | 熱膨張歪み防止型太陽電池モジュール |
JP2002222978A (ja) * | 2000-11-21 | 2002-08-09 | Sharp Corp | 太陽電池モジュール、交換用太陽電池セル、及び太陽電池セルの交換方法 |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10355113B2 (en) | 2004-06-04 | 2019-07-16 | The Board Of Trustees Of The University Of Illinois | Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics |
JP2006310745A (ja) * | 2005-03-29 | 2006-11-09 | Kyocera Corp | 太陽電池モジュール及びその製造方法 |
JP2008066695A (ja) * | 2006-08-09 | 2008-03-21 | Kyocera Corp | 太陽電池モジュールおよび太陽電池モジュールの製造方法 |
JP2013239716A (ja) * | 2006-09-06 | 2013-11-28 | Board Of Trustees Of The Univ Of Illinois | 2次元デバイスアレイ |
WO2009049572A1 (de) * | 2007-10-19 | 2009-04-23 | Solarwatt Ag | Leitungsverbinder für solarzellen von plattenförmigen solarmodulen |
US8334453B2 (en) * | 2007-12-11 | 2012-12-18 | Evergreen Solar, Inc. | Shaped tab conductors for a photovoltaic cell |
WO2010091680A2 (de) | 2009-02-16 | 2010-08-19 | Q-Cells Se | Solarzellenstring und solarmodul mit derartigen solarzellenstrings |
WO2010091680A3 (de) * | 2009-02-16 | 2011-09-15 | Q-Cells Se | Solarzellenstring und solarmodul mit derartigen solarzellenstrings |
CN102318084A (zh) * | 2009-02-16 | 2012-01-11 | Q-电池公司 | 太阳能电池串及由其组成的太阳能电池模组 |
CN102318084B (zh) * | 2009-02-16 | 2014-03-19 | Q-电池公司 | 太阳能电池串及由其组成的太阳能电池模组 |
JPWO2011016483A1 (ja) * | 2009-08-07 | 2013-01-10 | シャープ株式会社 | 太陽電池モジュール |
CN102473779A (zh) * | 2009-08-07 | 2012-05-23 | 夏普株式会社 | 太阳电池模块 |
WO2011016483A1 (ja) * | 2009-08-07 | 2011-02-10 | シャープ株式会社 | 太陽電池モジュール |
WO2012028537A3 (fr) * | 2010-08-30 | 2012-11-29 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Cellule photovoltaïque avec conducteurs discontinus |
US10453975B2 (en) | 2010-08-30 | 2019-10-22 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Photovoltaic cell having discontinuous conductors |
CN103797588A (zh) * | 2011-09-05 | 2014-05-14 | 迪睿合电子材料有限公司 | 太阳能电池模块的制造方法、太阳能电池模块和焊带的连接方法 |
CN104221161A (zh) * | 2012-03-23 | 2014-12-17 | 三洋电机株式会社 | 太阳能电池组件和太阳能电池组件的制造方法 |
US10084105B2 (en) | 2012-03-23 | 2018-09-25 | Panasonic Intellectual Property Management Co., Ltd. | Solar cell module and solar cell module manufacturing method |
WO2014033884A1 (ja) * | 2012-08-30 | 2014-03-06 | 三洋電機株式会社 | 太陽電池モジュールの配線材、太陽電池モジュール、及び太陽電池モジュールの製造方法 |
US9966487B2 (en) | 2015-12-14 | 2018-05-08 | Solarcity Corporation | Strain relief apparatus for solar modules |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2005098969A1 (ja) | 太陽電池及び太陽電池モジュール | |
JP2005302902A (ja) | 太陽電池及び太陽電池モジュール | |
EP2757591B1 (en) | Solar cell module | |
WO2009099179A1 (ja) | 太陽電池モジュール及び太陽電池 | |
JP2005252062A (ja) | 太陽電池装置 | |
JPH11312820A (ja) | 太陽電池モジュール及びその製造方法 | |
WO2010122935A1 (ja) | 配線シート、配線シート付き太陽電池セルおよび太陽電池モジュール | |
JP2009295940A (ja) | 太陽電池セルおよび太陽電池モジュール | |
JP2006080217A (ja) | 太陽電池及び太陽電池モジュール | |
JP2011077362A (ja) | 太陽電池セル及び太陽電池モジュール | |
JP5436697B2 (ja) | 太陽電池モジュールおよびその製造方法 | |
JP6064769B2 (ja) | 太陽電池モジュール及び太陽電池セル | |
JP3683700B2 (ja) | 太陽電池装置 | |
US10418503B2 (en) | Solar battery module and method for manufacturing solar battery module | |
EP2615647B1 (en) | Solar cell module | |
JP5035845B2 (ja) | 太陽電池および太陽電池モジュール | |
JP2009278011A (ja) | 太陽電池モジュール及び太陽電池セルの接続方法 | |
JP2000340812A (ja) | 太陽電池 | |
US9196775B2 (en) | Solar battery cell | |
JP4467466B2 (ja) | 太陽電池モジュールの製造方法 | |
JP2006278695A (ja) | 太陽電池モジュール | |
CN115498055A (zh) | 光伏组件及光伏组件制备方法 | |
RU2651642C1 (ru) | Фотоэлектрический преобразователь с самовосстанавливающимся контактом | |
JP6785964B2 (ja) | 太陽電池セルおよび太陽電池モジュール | |
JP5047340B2 (ja) | 太陽電池モジュールの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: DE |
|
122 | Ep: pct application non-entry in european phase |