DE69613170T2 - Akustische Oberflächenwellenanordnungen - Google Patents

Akustische Oberflächenwellenanordnungen

Info

Publication number
DE69613170T2
DE69613170T2 DE69613170T DE69613170T DE69613170T2 DE 69613170 T2 DE69613170 T2 DE 69613170T2 DE 69613170 T DE69613170 T DE 69613170T DE 69613170 T DE69613170 T DE 69613170T DE 69613170 T2 DE69613170 T2 DE 69613170T2
Authority
DE
Germany
Prior art keywords
acoustic wave
surface acoustic
wave arrangements
arrangements
wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69613170T
Other languages
English (en)
Other versions
DE69613170D1 (de
Inventor
Yasunobu Tsuji
Yutaka Taguchi
Keiji Onishi
Kazuo Eda
Katsuyuki Miyauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69613170D1 publication Critical patent/DE69613170D1/de
Publication of DE69613170T2 publication Critical patent/DE69613170T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders; Supports
    • H03H9/058Holders; Supports for surface acoustic wave devices
    • H03H9/059Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders; Supports
    • H03H9/0538Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders; Supports
    • H03H9/10Mounting in enclosures
    • H03H9/1064Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1071Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
DE69613170T 1995-03-28 1996-03-28 Akustische Oberflächenwellenanordnungen Expired - Fee Related DE69613170T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06982695A JP3301262B2 (ja) 1995-03-28 1995-03-28 弾性表面波装置

Publications (2)

Publication Number Publication Date
DE69613170D1 DE69613170D1 (de) 2001-07-12
DE69613170T2 true DE69613170T2 (de) 2001-09-27

Family

ID=13413961

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69613170T Expired - Fee Related DE69613170T2 (de) 1995-03-28 1996-03-28 Akustische Oberflächenwellenanordnungen

Country Status (4)

Country Link
US (1) US5699027A (de)
EP (1) EP0735671B1 (de)
JP (1) JP3301262B2 (de)
DE (1) DE69613170T2 (de)

Families Citing this family (114)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2872056B2 (ja) * 1994-12-06 1999-03-17 日本電気株式会社 弾性表面波デバイス
JPH08288787A (ja) * 1995-04-10 1996-11-01 Canon Inc 弾性表面波素子装置、スペクトラム拡散通信装置およびこれを用いたシステム
EP0840369A4 (de) * 1995-06-30 2001-12-19 Toshiba Kk Elektronisches bauteil und herstellungsverfahren dafür
JP3924016B2 (ja) * 1995-11-08 2007-06-06 シチズンミヨタ株式会社 圧電振動子
US6172446B1 (en) * 1995-08-25 2001-01-09 Mitsui Chemicals, Inc. Piezoelectric oscillator component, structure for supporting piezoelectric oscillator and method of mounting piezoelectric oscillator
DE19548048C2 (de) * 1995-12-21 1998-01-15 Siemens Matsushita Components Elektronisches Bauelement, insbesondere mit akustischen Oberflächenwellen arbeitendes Bauelement (OFW-Bauelement)
JPH09232904A (ja) * 1996-02-28 1997-09-05 Oki Electric Ind Co Ltd Sawフィルタ用セラミックパッケージ
DE69718693T2 (de) * 1996-03-08 2003-11-27 Matsushita Electric Ind Co Ltd Elektronisches Bauteil und Herstellungsverfahren
US5875099A (en) * 1996-05-09 1999-02-23 Murata Manufacturing Co., Ltd. Electronic component
US5880553A (en) 1996-05-15 1999-03-09 Murata Manufacturing Co.,Ltd. Electronic component and method of producing same
JPH10150341A (ja) * 1996-09-19 1998-06-02 Murata Mfg Co Ltd 1ポート型弾性表面波装置
DE19649332C1 (de) * 1996-11-28 1998-01-22 Tele Quarz Gmbh Resonator mit Kristall
JP3570600B2 (ja) * 1997-01-14 2004-09-29 株式会社村田製作所 圧電部品およびその製造方法
JP3554133B2 (ja) * 1997-04-10 2004-08-18 松下電器産業株式会社 弾性表面波フィルタ
JP3275775B2 (ja) * 1997-05-16 2002-04-22 株式会社村田製作所 弾性表面波装置
JP3982876B2 (ja) * 1997-06-30 2007-09-26 沖電気工業株式会社 弾性表面波装置
JP3336913B2 (ja) * 1997-06-30 2002-10-21 株式会社村田製作所 電子部品のパッケージ構造
JP3196693B2 (ja) * 1997-08-05 2001-08-06 日本電気株式会社 表面弾性波装置およびその製造方法
US5955949A (en) * 1997-08-18 1999-09-21 X-Cyte, Inc. Layered structure for a transponder tag
US5939784A (en) * 1997-09-09 1999-08-17 Amkor Technology, Inc. Shielded surface acoustical wave package
JPH11127055A (ja) * 1997-10-23 1999-05-11 Murata Mfg Co Ltd 複合電子部品
JPH11239037A (ja) * 1998-02-20 1999-08-31 Nec Corp 弾性表面波装置
JP3514361B2 (ja) * 1998-02-27 2004-03-31 Tdk株式会社 チップ素子及びチップ素子の製造方法
JP2000058593A (ja) 1998-08-03 2000-02-25 Nec Corp 表面弾性波素子の実装構造及びその実装方法
FR2786959B1 (fr) * 1998-12-08 2001-05-11 Thomson Csf Composant a ondes de surface encapsule et procede de fabrication collective
JP2000252787A (ja) * 1998-12-28 2000-09-14 Toshiba Corp 弾性表面波装置および弾性表面波装置用の外囲器
JP3339450B2 (ja) * 1999-03-02 2002-10-28 株式会社村田製作所 表面波装置の製造方法
JP3351402B2 (ja) * 1999-04-28 2002-11-25 株式会社村田製作所 電子素子、弾性表面波素子、それらの実装方法、電子部品または弾性表面波装置の製造方法、および、弾性表面波装置
US6225692B1 (en) * 1999-06-03 2001-05-01 Cts Corporation Flip chip package for micromachined semiconductors
JP3539315B2 (ja) * 1999-06-22 2004-07-07 株式会社村田製作所 電子デバイス素子の実装方法、および弾性表面波装置の製造方法
JP3860364B2 (ja) * 1999-08-11 2006-12-20 富士通メディアデバイス株式会社 弾性表面波装置
US6404100B1 (en) * 1999-10-18 2002-06-11 Kabushiki Kaisha Toshiba Surface acoustic wave apparatus and method of manufacturing the same
JP3438689B2 (ja) * 1999-12-20 2003-08-18 株式会社村田製作所 圧電共振子及び圧電発振子
DE10063265A1 (de) * 1999-12-20 2001-07-05 Murata Manufacturing Co Äußeres Überzugsubstrat für ein elektronisches Bauteil und ein piezoelektrisches Resonanzbauteil
JP2001267355A (ja) * 2000-03-17 2001-09-28 Murata Mfg Co Ltd ワイヤボンディング方法およびこのワイヤボンディング方法を用いた弾性表面波装置
JP3435639B2 (ja) * 2000-04-13 2003-08-11 株式会社村田製作所 弾性表面波装置の製造方法及び弾性表面波装置
JP3467454B2 (ja) * 2000-06-05 2003-11-17 Necエレクトロニクス株式会社 半導体装置の製造方法
JP3386043B2 (ja) * 2000-08-09 2003-03-10 株式会社村田製作所 弾性表面波デバイス
JP4049239B2 (ja) * 2000-08-30 2008-02-20 Tdk株式会社 表面弾性波素子を含む高周波モジュール部品の製造方法
JP3438711B2 (ja) * 2000-09-06 2003-08-18 セイコーエプソン株式会社 圧電デバイス及びその製造方法
JP4137356B2 (ja) * 2000-09-07 2008-08-20 Tdk株式会社 表面弾性波素子を含む高周波モジュール部品の製造方法
US6710682B2 (en) * 2000-10-04 2004-03-23 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device, method for producing the same, and circuit module using the same
JP2002118486A (ja) * 2000-10-06 2002-04-19 Matsushita Electric Ind Co Ltd 高周波複合スイッチモジュール
EP2437400B1 (de) * 2000-11-01 2013-09-25 Hitachi Metals, Ltd. Hochfrequenzschaltmodul
US6495398B1 (en) * 2001-01-05 2002-12-17 Clarisay, Incorporated Wafer-scale package for surface acoustic wave circuit and method of manufacturing the same
JP3414387B2 (ja) * 2001-03-09 2003-06-09 株式会社村田製作所 弾性表面波装置、通信装置
JP3612031B2 (ja) * 2001-03-29 2005-01-19 Tdk株式会社 高周波モジュール
JP3520414B2 (ja) * 2001-04-10 2004-04-19 株式会社村田製作所 弾性表面波装置およびその製造方法、通信装置
EP1296453B1 (de) * 2001-09-25 2008-11-12 TDK Corporation Gehäuse für integrierte Schaltung
US6750737B2 (en) * 2001-10-02 2004-06-15 Matsushita Electric Industrial Co., Ltd. High frequency switch and radio communication apparatus with layered body for saw filter mounting
US6621379B1 (en) 2001-11-29 2003-09-16 Clarisay, Incorporated Hermetic package for surface acoustic wave device and method of manufacturing the same
US6507097B1 (en) 2001-11-29 2003-01-14 Clarisay, Inc. Hermetic package for pyroelectric-sensitive electronic device and method of manufacturing the same
US6649446B1 (en) 2001-11-29 2003-11-18 Clarisay, Inc. Hermetic package for multiple contact-sensitive electronic devices and methods of manufacturing thereof
JP2003249840A (ja) 2001-12-18 2003-09-05 Murata Mfg Co Ltd 弾性表面波装置
JP2003283290A (ja) * 2002-01-21 2003-10-03 Murata Mfg Co Ltd 弾性表面波装置およびそれを有する通信装置
US6965168B2 (en) 2002-02-26 2005-11-15 Cts Corporation Micro-machined semiconductor package
SG121707A1 (en) 2002-03-04 2006-05-26 Micron Technology Inc Method and apparatus for flip-chip packaging providing testing capability
SG111935A1 (en) * 2002-03-04 2005-06-29 Micron Technology Inc Interposer configured to reduce the profiles of semiconductor device assemblies and packages including the same and methods
US6639150B1 (en) 2002-04-23 2003-10-28 Clarisay, Inc. Hermetic package for surface acoustic wave device having exposed device substrate contacts and method of manufacturing the same
US6734567B2 (en) * 2002-08-23 2004-05-11 Texas Instruments Incorporated Flip-chip device strengthened by substrate metal ring
KR100541084B1 (ko) * 2003-08-20 2006-01-11 삼성전기주식회사 표면 탄성파 필터 패키지 제조방법 및 그에 사용되는패키지 시트
JP2005167969A (ja) * 2003-11-14 2005-06-23 Fujitsu Media Device Kk 弾性波素子および弾性波素子の製造方法
US7385463B2 (en) * 2003-12-24 2008-06-10 Kyocera Corporation Surface acoustic wave device and electronic circuit device
JP4636018B2 (ja) * 2004-05-12 2011-02-23 株式会社大真空 圧電振動素子用パッケージ及び圧電振動子
JP2006238014A (ja) * 2005-02-24 2006-09-07 Kyocera Corp 弾性表面波素子実装基板及びそれを用いた高周波モジュール、通信機器
US7362038B1 (en) * 2005-04-18 2008-04-22 Amkor Technology, Inc. Surface acoustic wave (SAW) device package and method for packaging a SAW device
US20060238274A1 (en) * 2005-04-22 2006-10-26 Ycl Electronics Co., Ltd. Surface acoustic wave device
KR100691160B1 (ko) * 2005-05-06 2007-03-09 삼성전기주식회사 적층형 표면탄성파 패키지 및 그 제조방법
EP1892831B1 (de) * 2005-06-16 2012-08-29 Murata Manufacturing Co., Ltd. Piezoelektrische vorrichtung und herstellungsverfahren dafür
CN101361267B (zh) * 2006-01-18 2011-09-14 株式会社村田制作所 弹性表面波装置和弹性边界波装置
JP2011049664A (ja) * 2009-08-25 2011-03-10 Seiko Instruments Inc パッケージの製造方法、圧電振動子の製造方法、発振器、電子機器および電波時計
JP5595196B2 (ja) * 2010-09-16 2014-09-24 日本電波工業株式会社 圧電デバイス
JP6155551B2 (ja) * 2012-04-10 2017-07-05 セイコーエプソン株式会社 電子デバイス、電子機器および電子デバイスの製造方法
US9812350B2 (en) 2013-03-06 2017-11-07 Qorvo Us, Inc. Method of manufacture for a silicon-on-plastic semiconductor device with interfacial adhesion layer
US9583414B2 (en) 2013-10-31 2017-02-28 Qorvo Us, Inc. Silicon-on-plastic semiconductor device and method of making the same
KR101787329B1 (ko) * 2014-07-31 2017-10-18 스카이워크스 필터 솔루션즈 재팬 씨오., 엘티디. 탄성파 디바이스
US9503050B2 (en) 2014-07-31 2016-11-22 Skyworks Filter Solutions Japan Co., Ltd. Elastic wave devices
US9824951B2 (en) 2014-09-12 2017-11-21 Qorvo Us, Inc. Printed circuit module having semiconductor device with a polymer substrate and methods of manufacturing the same
US10085352B2 (en) 2014-10-01 2018-09-25 Qorvo Us, Inc. Method for manufacturing an integrated circuit package
US9530709B2 (en) 2014-11-03 2016-12-27 Qorvo Us, Inc. Methods of manufacturing a printed circuit module having a semiconductor device with a protective layer in place of a low-resistivity handle layer
US9960145B2 (en) 2015-03-25 2018-05-01 Qorvo Us, Inc. Flip chip module with enhanced properties
US9613831B2 (en) 2015-03-25 2017-04-04 Qorvo Us, Inc. Encapsulated dies with enhanced thermal performance
US20160343604A1 (en) 2015-05-22 2016-11-24 Rf Micro Devices, Inc. Substrate structure with embedded layer for post-processing silicon handle elimination
US10276495B2 (en) 2015-09-11 2019-04-30 Qorvo Us, Inc. Backside semiconductor die trimming
US10020405B2 (en) 2016-01-19 2018-07-10 Qorvo Us, Inc. Microelectronics package with integrated sensors
US10090262B2 (en) 2016-05-09 2018-10-02 Qorvo Us, Inc. Microelectronics package with inductive element and magnetically enhanced mold compound component
US10773952B2 (en) 2016-05-20 2020-09-15 Qorvo Us, Inc. Wafer-level package with enhanced performance
US10784149B2 (en) 2016-05-20 2020-09-22 Qorvo Us, Inc. Air-cavity module with enhanced device isolation
JP6556663B2 (ja) * 2016-05-26 2019-08-07 太陽誘電株式会社 弾性波デバイス
US10103080B2 (en) 2016-06-10 2018-10-16 Qorvo Us, Inc. Thermally enhanced semiconductor package with thermal additive and process for making the same
US10079196B2 (en) 2016-07-18 2018-09-18 Qorvo Us, Inc. Thermally enhanced semiconductor package having field effect transistors with back-gate feature
JP7035014B2 (ja) 2016-08-12 2022-03-14 コーボ ユーエス,インコーポレイティド 性能が強化されたウェハレベルパッケージ
SG11201901194SA (en) 2016-08-12 2019-03-28 Qorvo Us Inc Wafer-level package with enhanced performance
SG11201901196RA (en) 2016-08-12 2019-03-28 Qorvo Us Inc Wafer-level package with enhanced performance
US10109502B2 (en) 2016-09-12 2018-10-23 Qorvo Us, Inc. Semiconductor package with reduced parasitic coupling effects and process for making the same
US10090339B2 (en) 2016-10-21 2018-10-02 Qorvo Us, Inc. Radio frequency (RF) switch
US10749518B2 (en) 2016-11-18 2020-08-18 Qorvo Us, Inc. Stacked field-effect transistor switch
US10068831B2 (en) 2016-12-09 2018-09-04 Qorvo Us, Inc. Thermally enhanced semiconductor package and process for making the same
US10755992B2 (en) 2017-07-06 2020-08-25 Qorvo Us, Inc. Wafer-level packaging for enhanced performance
US10366972B2 (en) 2017-09-05 2019-07-30 Qorvo Us, Inc. Microelectronics package with self-aligned stacked-die assembly
US10784233B2 (en) 2017-09-05 2020-09-22 Qorvo Us, Inc. Microelectronics package with self-aligned stacked-die assembly
US11152363B2 (en) 2018-03-28 2021-10-19 Qorvo Us, Inc. Bulk CMOS devices with enhanced performance and methods of forming the same utilizing bulk CMOS process
DE102018207955B4 (de) * 2018-05-22 2023-05-17 Schweizer Electronic Ag Leiterplattenmodul mit integriertem leistungselektronischen Metall-Keramik-Modul sowie Verfahren zu dessen Herstellung
US10804246B2 (en) 2018-06-11 2020-10-13 Qorvo Us, Inc. Microelectronics package with vertically stacked dies
US11069590B2 (en) 2018-10-10 2021-07-20 Qorvo Us, Inc. Wafer-level fan-out package with enhanced performance
US10964554B2 (en) 2018-10-10 2021-03-30 Qorvo Us, Inc. Wafer-level fan-out package with enhanced performance
US11646242B2 (en) 2018-11-29 2023-05-09 Qorvo Us, Inc. Thermally enhanced semiconductor package with at least one heat extractor and process for making the same
US20200235066A1 (en) 2019-01-23 2020-07-23 Qorvo Us, Inc. Rf devices with enhanced performance and methods of forming the same
US11387157B2 (en) 2019-01-23 2022-07-12 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
KR20210129656A (ko) 2019-01-23 2021-10-28 코르보 유에스, 인크. Rf 반도체 디바이스 및 이를 형성하는 방법
US20200235040A1 (en) 2019-01-23 2020-07-23 Qorvo Us, Inc. Rf devices with enhanced performance and methods of forming the same
US11410897B2 (en) * 2019-06-27 2022-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure having a dielectric layer edge covering circuit carrier
US11646289B2 (en) 2019-12-02 2023-05-09 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US11923238B2 (en) 2019-12-12 2024-03-05 Qorvo Us, Inc. Method of forming RF devices with enhanced performance including attaching a wafer to a support carrier by a bonding technique without any polymer adhesive

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1281810C (en) * 1984-02-20 1991-03-19 Stephen P. Rogerson Mounting of saw devices
JPS62173813A (ja) * 1986-01-28 1987-07-30 Alps Electric Co Ltd 弾性表面波素子
JPS62173814A (ja) * 1986-01-28 1987-07-30 Alps Electric Co Ltd 弾性表面波素子搭載ユニツト
DE3609461A1 (de) * 1986-03-20 1987-09-24 Siemens Ag Elektroakustischer wandler
JPH0456510A (ja) * 1990-06-26 1992-02-24 Clarion Co Ltd 弾性表面波装置
JP2673993B2 (ja) * 1990-07-02 1997-11-05 日本無線株式会社 表面弾性波装置
US5208504A (en) * 1990-12-28 1993-05-04 Raytheon Company Saw device and method of manufacture
JPH05327394A (ja) * 1992-05-27 1993-12-10 Japan Radio Co Ltd 弾性表面波素子のフェースダウン実装用パッケージ
US5459368A (en) * 1993-08-06 1995-10-17 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device mounted module

Also Published As

Publication number Publication date
EP0735671B1 (de) 2001-06-06
US5699027A (en) 1997-12-16
EP0735671A1 (de) 1996-10-02
DE69613170D1 (de) 2001-07-12
JP3301262B2 (ja) 2002-07-15
JPH08265096A (ja) 1996-10-11

Similar Documents

Publication Publication Date Title
DE69613170T2 (de) Akustische Oberflächenwellenanordnungen
DE69516106D1 (de) Akustische Oberflächenwellenanordnung
DE69513904D1 (de) Akustische Oberflächenwellenanordnung
DE69735746D1 (de) Akustische Oberflächenwellenanordnung
DE69619741T2 (de) Akustisches Oberflächenwellenfilter
DE69814205D1 (de) Akustische Oberflächenwellenanordnung
DE69620524T2 (de) Oberflächenwellenfilter
DE69614463D1 (de) Akustische Oberflächenwellenanordnung
DE69636897D1 (de) Akustischer Oberflächenwellenfilter
DE69841878D1 (de) Akustische Oberflächenwellenanordnung
DE69716238D1 (de) Akustische oberflächenwellenanordnung
DE69611771D1 (de) Akustische Oberflächenwellenanordnung
DE69321799D1 (de) Akustische Oberflächenwellenanordnung
DE69522066T2 (de) Akustische Oberflächenwellenanordnung
DE69617286D1 (de) Akustische Oberflächenwellenanordnung
DE69842149D1 (de) Akustische Oberflächenwellenanordnung
DE69305758D1 (de) Akustische Oberflächenwellenanordnung
DE69625734T2 (de) Akustischer Oberflächenwellenfilter
DE69723957D1 (de) Akustische oberflächenwellenanordnung
DE69632710D1 (de) Akustische oberflächenwellenanordnung
DE69522065D1 (de) Akustische Oberflächenwellenanordnung
DE69423062T2 (de) Akustische Oberflächenwellenanordnung
DE69406618D1 (de) Akustische Oberflächenwellenanordnung
DE69733237D1 (de) Akustische Oberflächenwellenanordnung
DE69635332D1 (de) Akustisches oberflächenwellenfilter

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee