JP2001267355A - ワイヤボンディング方法およびこのワイヤボンディング方法を用いた弾性表面波装置 - Google Patents

ワイヤボンディング方法およびこのワイヤボンディング方法を用いた弾性表面波装置

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Publication number
JP2001267355A
JP2001267355A JP2000075287A JP2000075287A JP2001267355A JP 2001267355 A JP2001267355 A JP 2001267355A JP 2000075287 A JP2000075287 A JP 2000075287A JP 2000075287 A JP2000075287 A JP 2000075287A JP 2001267355 A JP2001267355 A JP 2001267355A
Authority
JP
Japan
Prior art keywords
bonding
wire
electrode
acoustic wave
surface acoustic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000075287A
Other languages
English (en)
Inventor
Tadahiko Takada
忠彦 高田
Hisamitsu Kamenaga
久光 亀永
Shingo Iwasa
進吾 岩佐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP2000075287A priority Critical patent/JP2001267355A/ja
Priority to TW090105149A priority patent/TW503616B/zh
Priority to GB0105752A priority patent/GB2361888B/en
Priority to US09/801,384 priority patent/US6757946B2/en
Priority to KR1020010013143A priority patent/KR20010092326A/ko
Priority to FR0103623A priority patent/FR2808233B1/fr
Priority to CNB011117508A priority patent/CN1167116C/zh
Publication of JP2001267355A publication Critical patent/JP2001267355A/ja
Pending legal-status Critical Current

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/12—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding
    • B23K20/129—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding specially adapted for particular articles or workpieces
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    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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Abstract

(57)【要約】 【課題】電極面を構成するタンタル膜への接合性を向上
させ、タンタル膜上に追加の電極を設けなくても直接ボ
ンディングが可能なワイヤボンディング方法を提供す
る。 【解決手段】２つの接続電極間をワイヤで接続するワイ
ヤボンディング方法であって、少なくとも一方の接続電
極がタンタルで形成され、この接続電極に対して破断荷
重が２１ｇ以上または破断応力が２９０Ｎ／ｍｍ2 以上
の金属線よりなるボンディングワイヤで超音波ワイヤボ
ンディングを行なう。これにより、超音波エネルギーが
タンタル膜よりなる接続電極とボンディングワイヤとの
接合面に効果的に印加され、接合強度が大幅に向上す
る。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は２つの接続電極間を
ワイヤで接続するワイヤボンディング方法およびこのワ
イヤボンディング方法を用いた弾性表面波装置に関する
ものである。
【０００２】
【従来の技術】従来より、離間した接続電極間を電気的
に接続する方法として、ワイヤボンディング方法が広く
使用されている。ボンディング電極の表面は酸化膜で覆
われているので、ボンディングワイヤを接合するために
は酸化膜を除去する必要がある。超音波ワイヤボンディ
ング法では、超音波振動がボンディングワイヤに与えら
れるため、ボンディングワイヤがボンディング電極上で
摺動することにより、表面酸化膜が破壊され、活性化さ
れた金属面が現れる。そして、塑性流動と摩擦熱による
温度上昇のために局部溶融、拡散などが生じて金属結合
による接合が行なわれる。
【０００３】
【発明が解決しようとする課題】電極をタンタルのよう
に基板より比重の大きな電極材料で構成することによっ
て、ＳＨ型の表面波（ラブ波等）を用いた弾性表面波素
子が提案されている。ところが、ボンディング電極が硬
いタンタル膜で形成されている場合には、塑性流動が起
こりにくく、ボンディングワイヤの方が柔らかいため
に、超音波エネルギーがボンディングワイヤの塑性流動
（変形）に多く伝えられ、接触面にはあまり伝わらな
い。そのため、ボンディングワイヤの変形量が大きい
が、ボンディング電極との接合は不十分な状態となる。
その結果、ワイヤ不着やワイヤ引張り強度の低下などが
発生する問題があった。
【０００４】その対策として、タンタル膜上にＡｕやＡ
ｌ（Ａｌ合金を含む）の電極を設け、この電極上にワイ
ヤボンディングを行なう方法が提案されている。しか
し、この方法では、追加の電極膜を形成する必要がある
ため、工程数の増加およびコスト上昇を招く欠点があっ
た。
【０００５】そこで、本発明の目的は、電極面を構成す
るタンタル膜への接合性を向上させ、タンタル膜上に追
加の電極を設けなくても直接ボンディングが可能なワイ
ヤボンディング方法を提供することにある。他の目的
は、上記ワイヤボンディング方法を用いて接合力が高
く、電気的信頼性の高い弾性表面波装置を提供すること
にある。
【０００６】
【課題を解決するための手段】前記目的を達成するた
め、請求項１に記載の発明は、２つの接続電極間をワイ
ヤで接続する超音波ワイヤボンディング方法において、
少なくとも一方の接続電極がタンタルで形成され、前記
ワイヤとして破断荷重が２１ｇ以上の金属線、または破
断応力が２９０Ｎ／ｍｍ2 以上の金属線を用いることを
特徴とするワイヤボンディング方法を提供する。
【０００７】本発明では、ボンディングワイヤに高強度
な（破断応力が大きい）ワイヤを使用することで、塑性
変形を抑え、超音波エネルギーをタンタル膜との接合面
に効果的に印加することができる。そのため、ボンディ
ングワイヤとタンタル膜との金属結合による強い接合が
行なわれ、ボンディングワイヤをタンタル膜へ直接接合
することができる。
【０００８】ボンディングワイヤとしては、破断荷重が
アルミニウム合金線、特にＡｌ−Ｓｉワイヤを用いるの
が望ましい。アルミニウムに微量のＳｉを添加すること
で、破断荷重を大幅に向上させることができる。
【０００９】本発明のワイヤボンディング方法を弾性表
面波装置に適用するのが望ましい。すなわち、素子載置
面を有するパッケージと、前記パッケージの素子載置面
に固定された弾性表面波素子とを備え、弾性表面波素子
が圧電基板と、圧電基板の上面側に形成されたＩＤＴ電
極およびボンディング電極とを有し、弾性表面波素子の
ボンディング電極とパッケージの外部接続用電極とが超
音波ワイヤボンディング法により接続された弾性表面波
装置である。弾性表面波素子のＩＤＴ電極およびボンデ
ィング電極がタンタルで構成され、ボンディングワイヤ
として破断荷重が２１ｇ以上の金属線または破断応力が
２９０Ｎ／ｍｍ2 以上の金属線を使用する。これによ
り、ボンディングワイヤとタンタル膜よりなるボンディ
ング電極との高い接合強度を得ることができ、落下衝撃
などが作用しても、ボンディングワイヤがボンディング
電極から外れるのを防止できる。
【００１０】
【発明の実施の形態】図１は本発明にかかるワイヤボン
ディング方法を用いた弾性表面波装置の一例を示す。こ
の弾性表面波装置は、素子載置面２ａを有するパッケー
ジ１と、パッケージ１の素子載置面２ａに固定された弾
性表面波素子１０とを備えている。パッケージ１は、セ
ラミック等の底板２および側壁部４，５，６を積層する
ことによりキャビティ形状に形成したものであり、その
内部から外部へ延びるように外部接続用電極７，８が形
成されている。この実施例では、外部接続用電極７，８
はＡｕ，Ｃｕ，Ａｌなどよりなり、外部接続用電極７，
８の電極パッド７ａ，８ａが側壁部４の上面に形成され
ている。側壁部６の上面にはセラミックや金属などの蓋
板９が、接着、シーム溶接、ロウ付などによって固定さ
れ、内部が気密封止されている。なお、パッケージ１は
キャビティ形状に限るものではなく、平板状の基板の上
に弾性表面波素子１０を固定し、素子を覆うようにキャ
ップを基板上に接着することにより、内部を気密封止し
てもよい。
【００１１】弾性表面波素子１０は、接着剤３を介して
パッケージ１の素子載置面２ａに固定されている。弾性
表面波素子１０はＳＨ型表面波を用いたものであり、タ
ンタル酸リチウム、ニオブ酸リチウム、水晶などの圧電
材料よりなる圧電基板１１と、その上面に形成されたタ
ンタル膜よりなるＩＤＴ電極１２およびボンディング電
極１３，１４とで構成されている。ボンディング電極１
３，１４とパッケージ１の電極パッド７ａ，８ａとが、
ボンディングワイヤ２０，２１を介して超音波ワイヤボ
ンディング法によって接続されている。ボンディングワ
イヤ２０，２１は、破断荷重が２１ｇ以上の金属線より
なり、この実施例では直径３０μｍのＡｌ−Ｓｉ合金製
のワイヤを用いた。
【００１２】なお、ボンディングワイヤの直径が３０μ
ｍで破断荷重が２１ｇ以上とすると、その破断応力は次
のようになる。すなわち、直径が３０μｍのワイヤの断
面積Ｓは、 Ｓ＝π×（０．０３）2 ／４ｍｍ2 であるから、 破断応力＝２１／Ｓ ≒２９０Ｎ／ｍｍ2 となる。したがって、２９０Ｎ／ｍｍ2 以上の破断応力
を有する金属材料であれば、たとえ直径３０μｍより細
いワイヤを使用しても、適切なワイヤボンディングを行
なうことができる。
【００１３】上記構成よりなる弾性表面波装置における
ワイヤボンディング方法について説明する。この実施例
では、１次ボンディングを弾性表面波素子１０のボンデ
ィング電極１３，１４に対して行い、２次ボンディング
をパッケージ１の電極パッド７ａ，８ａに対して行な
う。ボンディングワイヤ２０，２１を１次ボンディング
する際、ボンディング電極１３，１４がタンタル膜より
なるため、ボンディング電極１３，１４とボンディング
ワイヤ２０，２１との強い接合力が得られない場合があ
る。すなわち、ボンディング電極１３，１４は硬いタン
タル膜で形成されているので、Ａｕワイヤのような柔ら
かなボンディングワイヤを用いたのでは、ボンディング
ワイヤの塑性変形のみが起こり、ボンディング電極１
３，１４との接合面に超音波エネルギーが効率よく伝わ
らず、十分な接合力が得られない。ところが、本発明で
は、破断荷重が２１ｇ以上の高強度のボンディングワイ
ヤ２０，２１を使用したので、ボンディングワイヤ２
０，２１の塑性変形が抑制され、超音波エネルギーがボ
ンディングワイヤ２０，２１とボンディング電極１３，
１４との接合面に効果的に作用する。そのため、ボンデ
ィングワイヤ２０，２１とボンディング電極１３，１４
との間で超音波振動による摺動が起こり、その摩擦熱に
よって局部溶融、拡散などが生じ、金属結合による強い
接合が行なわれる。なお、上記実施例では、１次ボンデ
ィングを弾性表面波素子１０のボンディング電極１３，
１４に対して行い、２次ボンディングをパッケージ１の
電極パッド７ａ，８ａに対して行なったが、これとは逆
に、１次ボンディングを電極パッド７ａ，８ａに対して
行い、２次ボンディングをボンディング電極１３，１４
に対して行なってもよい。
【００１４】図２はボンディングワイヤの硬さを変えて
接合性を評価したものである。接合強度にはワイヤ引張
り試験を採用し、その引張り強度とワイヤ破断モードと
を調査した。破断モード剥がれ（ボンディング電極とボ
ンディングワイヤとの界面で破断したもの）の発生率が
高いほど、接合状態が悪いことを示している。図２から
判るように、ワイヤ破断荷重が２１ｇ以上になると、破
断モード剥がれの発生がなくなり、引張り強度も高くな
っている。このことから、接合状態が良好であることが
判る。なお、この評価では、ボンディングワイヤとして
直径３０μｍのＡｌ−１％Ｓｉワイヤを使用し、ボンデ
ィングツールはインライングルーブ形状のものを使用し
た。
【００１５】上記実施例では、本発明のワイヤボンディ
ング方法を弾性表面波装置に適用したが、タンタル膜よ
りなる接続電極を備えた電子部品であれば、適用可能で
あることは勿論である。タンタル膜よりなる接続電極
は、電子部品素子側に限らず、パッケージ側に設けても
よい。また、タンタル膜よりなる接続電極は１次側ある
いは２次側のいずれであってもよいが、１次側に本発明
のボンディング方法を適用すれば、超音波エネルギーを
十分に印加できるので、望ましい。
【００１６】
【発明の効果】以上の説明で明らかなように、本発明に
よれば、タンタル膜よりなる接続電極に対して、破断荷
重が２１ｇ以上または破断応力が２９０Ｎ／ｍｍ2 以上
の高強度のボンディングワイヤを用いて超音波ワイヤボ
ンディングするようにしたので、ボンディングワイヤの
塑性変形を抑え、超音波エネルギーを接続電極とボンデ
ィングワイヤとの接合面に効果的に印加でき、接合力を
高めることができる。また、タンタル膜上にＡｕやＡｌ
などの追加的な電極を形成する必要がなく、工程数を削
減でき、コストを低減できるという効果を有する。
【図面の簡単な説明】
【図１】本発明にかかるワイヤボンディング方法を用い
た弾性表面波装置の一例の断面図である。
【図２】ワイヤ破断荷重に対する引張り強度と破断モー
ド剥がれの発生率との関係を示す図である。
【符号の説明】
１ パッケージ ７，８ 外部接続用電極 ７ａ，８ａ 電極パッド １０ 弾性表面波素子 １２ ＩＤＴ電極 １３，１４ ボンディング電極 ２０，２１ ボンディングワイヤ
───────────────────────────────────────────────────── フロントページの続き (72)発明者 岩佐 進吾 京都府長岡京市天神２丁目26番10号 株式 会社村田製作所内 Ｆターム(参考） 5F044 AA07 EE04 FF03 FF05 5J097 AA24 AA32 FF03 GG07 HA04 JJ01 KK01 KK10

Claims (6)

    【特許請求の範囲】
  1. 【請求項１】２つの接続電極間をワイヤで接続する超音
    波ワイヤボンディング方法において、少なくとも一方の
    接続電極がタンタルで形成され、前記ワイヤとして破断
    荷重が２１ｇ以上の金属線、または破断応力が２９０Ｎ
    ／ｍｍ2 以上の金属線を用いることを特徴とするワイヤ
    ボンディング方法。
  2. 【請求項２】前記ワイヤは破断荷重がアルミニウム合金
    線であることを特徴とする請求項１に記載のワイヤボン
    ディング方法。
  3. 【請求項３】前記ワイヤはＡｌ−Ｓｉワイヤであること
    を特徴とする請求項２に記載のワイヤボンディング方
    法。
  4. 【請求項４】素子載置面を有するパッケージと、前記パ
    ッケージの素子載置面に固定された弾性表面波素子とを
    備え、前記弾性表面波素子が圧電基板と、圧電基板の上
    面側に形成されたＩＤＴ電極およびボンディング電極と
    を有し、弾性表面波素子のボンディング電極とパッケー
    ジの外部接続用電極とが超音波ワイヤボンディング法に
    より接続された弾性表面波装置において、前記弾性表面
    波素子のＩＤＴ電極およびボンディング電極はタンタル
    からなり、ボンディングワイヤとして破断荷重が２１ｇ
    以上の金属線、または破断応力が２９０Ｎ／ｍｍ2 以上
    の金属線を使用したことを特徴とする弾性表面波装置。
  5. 【請求項５】前記ボンディングワイヤはアルミニウム合
    金線であることを特徴とする請求項４に記載の弾性表面
    波装置。
  6. 【請求項６】前記ボンディングワイヤはＡｌ−Ｓｉワイ
    ヤであることを特徴とする請求項５に記載の弾性表面波
    装置。
JP2000075287A 2000-03-17 2000-03-17 ワイヤボンディング方法およびこのワイヤボンディング方法を用いた弾性表面波装置 Pending JP2001267355A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2000075287A JP2001267355A (ja) 2000-03-17 2000-03-17 ワイヤボンディング方法およびこのワイヤボンディング方法を用いた弾性表面波装置
TW090105149A TW503616B (en) 2000-03-17 2001-03-06 Wire bonding method, surface acoustic wave apparatus and method for producing surface acoustic wave apparatus
GB0105752A GB2361888B (en) 2000-03-17 2001-03-08 Wire bonding method, surface acoustic wave apparatus and method for producing surface acoustic wave apparatus
US09/801,384 US6757946B2 (en) 2000-03-17 2001-03-08 Wire bonding method
KR1020010013143A KR20010092326A (ko) 2000-03-17 2001-03-14 와이어 본딩 방법, 탄성표면파 장치 및 탄성표면파 장치의제조 방법
FR0103623A FR2808233B1 (fr) 2000-03-17 2001-03-16 Procede de liaison par fils, et appareil a ondes acoustiques de surface
CNB011117508A CN1167116C (zh) 2000-03-17 2001-03-19 引线接合法、声表面波设备和声表面波设备的制造方法

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JP2000075287A JP2001267355A (ja) 2000-03-17 2000-03-17 ワイヤボンディング方法およびこのワイヤボンディング方法を用いた弾性表面波装置

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JP (1) JP2001267355A (ja)
KR (1) KR20010092326A (ja)
CN (1) CN1167116C (ja)
FR (1) FR2808233B1 (ja)
GB (1) GB2361888B (ja)
TW (1) TW503616B (ja)

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* Cited by examiner, † Cited by third party
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JP2001267355A (ja) * 2000-03-17 2001-09-28 Murata Mfg Co Ltd ワイヤボンディング方法およびこのワイヤボンディング方法を用いた弾性表面波装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3507033A (en) * 1965-01-06 1970-04-21 Western Electric Co Ultrasonic bonding method
US3959747A (en) * 1975-04-30 1976-05-25 Rca Corporation Metallized lithium niobate and method of making
JPS6159760A (ja) 1984-08-30 1986-03-27 Mitsubishi Metal Corp 半導体装置の結線用Ａｌ合金極細線
GB2177639B (en) * 1985-07-08 1988-12-29 Philips Electronic Associated Ultrasonic wire bonder and method of manufacturing a semiconductor device therewith
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FR2714200B1 (fr) * 1993-11-25 1996-12-27 Fujitsu Ltd Dispositif à onde acoustique de surface et son procédé de fabrication.
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JP3301262B2 (ja) * 1995-03-28 2002-07-15 松下電器産業株式会社 弾性表面波装置
JP3308759B2 (ja) * 1995-04-10 2002-07-29 日本電気株式会社 弾性表面波装置
JPH09298442A (ja) * 1996-03-08 1997-11-18 Tdk Corp 弾性表面波装置及びその製造方法
DE69718693T2 (de) * 1996-03-08 2003-11-27 Matsushita Electric Ind Co Ltd Elektronisches Bauteil und Herstellungsverfahren
JP3464106B2 (ja) 1996-11-28 2003-11-05 京セラ株式会社 弾性表面波装置
JP3339350B2 (ja) * 1997-02-20 2002-10-28 株式会社村田製作所 弾性表面波装置
KR100502776B1 (ko) * 1997-08-04 2005-07-25 후고벤스 알루미늄 발츠프로두크테 게엠베하 브레이징 용도 및 용접 구조체용 고강도 알루미늄-마그네슘-아연-실리콘 합금, 그 용접 구조체와 브레이징 구조체 및 그 사용방법
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JP2001267355A (ja) * 2000-03-17 2001-09-28 Murata Mfg Co Ltd ワイヤボンディング方法およびこのワイヤボンディング方法を用いた弾性表面波装置

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Publication number Publication date
FR2808233A1 (fr) 2001-11-02
GB2361888A (en) 2001-11-07
FR2808233B1 (fr) 2006-05-19
CN1167116C (zh) 2004-09-15
GB0105752D0 (en) 2001-04-25
GB2361888B (en) 2002-04-24
US6757946B2 (en) 2004-07-06
US20010022484A1 (en) 2001-09-20
CN1317876A (zh) 2001-10-17
KR20010092326A (ko) 2001-10-24
TW503616B (en) 2002-09-21

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