AT247482B - Kondensator und Verfahren zu seiner Herstellung - Google Patents

Kondensator und Verfahren zu seiner Herstellung

Info

Publication number
AT247482B
AT247482B AT926861A AT926861A AT247482B AT 247482 B AT247482 B AT 247482B AT 926861 A AT926861 A AT 926861A AT 926861 A AT926861 A AT 926861A AT 247482 B AT247482 B AT 247482B
Authority
AT
Austria
Prior art keywords
capacitor
capacitors
silicon
dielectric layer
semiconductor
Prior art date
Application number
AT926861A
Other languages
English (en)
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27408060&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=AT247482(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of AT247482B publication Critical patent/AT247482B/de

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
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    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
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    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
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Description


   <Desc/Clms Page number 1> 
 



  Kondensator und Verfahren zu seiner Herstellung 
Die Erfindung betrifft einen Kondensator mit einer Dielektrikum-Schichte auf einem seiner Beläge und mit einem leitenden Belag, welcher auf der Dielektrikum-Schichte aufliegt, sowie ein Verfahren zur Herstellung dieses Kondensators. 



   Ziel der Erfindung ist es, einen Kondensator zu schaffen, der wesentlich kleiner, kompakter und viel zuverlässiger ist als die Kondensatoren der bisherigen Art. Gemäss der Erfindung wird dies dadurch erreicht, dass der erstgenannte Belag aus einem Einkristall-Halbleitermaterial besteht, welches aus der Gruppe, die im wesentlichen von Silizium, Germanium und intermetallischen Legierungen gebildet ist, ausgewählt ist, und dass die Dielektrikum-Schichte aus einem Siliziumoxyd besteht. 



   Gemäss einem weiteren Merkmal der Erfindung kann der erstgenannte Belag ein Bereich eines Halb- 
 EMI1.1 
 render Teil einer kompletten elektronischen Schaltung, die sich auf einem einzelnen Halbleiterkörper befindet, wie dies in der Patentschrift Nr. 226 274 beschrieben ist. 



   Gegenstand der Erfindung ist auch ein Verfahren zur Herstellung eines derartigen Kondensators, wobei der erstgenannte Belag von Silizium gebildet   ist ;   dieses Verfahren ist dadurch gekennzeichnet, dass die Dielektrikum-Schichte durch Oberflächen-Oxydieren des Siliziumkörpers erzeugt wird. Auf diese Weise kann der Kondensator schneller und besser als die bisher üblichen Kondensatoren hergestellt werden. 



   Es ist an sich bereits bekanntgeworden, ein Dielektrikum aus Siliziumoxyd anzuwenden, jedoch ist die gleichzeitige Anwendung einer Schicht aus einem Oxyd des Siliziums als Dielektrikum und eines Halbleitermaterials als zweiter Belag eines Kondensators demgegenüber nicht nur neu, sondern es ergeben sich hiedurch auch nicht zu erwartende Vorteile verschiedenster Art, wie sie später noch dargelegt werden sollen. 



   Im folgenden wird die Erfindung an Hand der Zeichnungen genauer erläutert, welche bevorzugte Ausführungsformen der Erfindung darstellt. Hiebei zeigt Fig. 1 einen nicht unter das Schutzbegehren fallenden Halbleiter-Kondensator und Fig. 2 zeigt einen   Halbleiterkondensator   gemäss einer Verwirklichungsform der Erfindung. 



   Wie in Fig. 1 gezeigt wird, wird der Kondensator durch die Verwendung eines   pn-Überganges   erhalten. Ein Halbleiterplättchen 15 der p-Leitfähigkeitstype weist eine eindiffundierte Schicht 16 der   n-Leitfähigkeitstype   auf und besitzt an seinen gegenüberliegenden Seiten ohmische Kontakte 17. 



  Die Kapazität C eines diffundierten Überganges ist gegeben durch den Ausdruck 
 EMI1.2 
 

 <Desc/Clms Page number 2> 

 hierin bedeutet A die Flache des Überganges in   cm2, s   ist die Dielektrizitätskonstante, q ist die elektrische Ladung, a ist der Gradient der Dichte der Verunreinigungen und V ist die ange- legte Spannung. 



   Bei dem in Fig. 2 gezeigten Kondensator wird die Kapazität in einem Halbleiter-Einkristallkörper auf die im folgenden beschriebene Art erhalten. In Fig. 2 ist ein Körper 15a aus halbleitendem Mate- rial der n-oder der p-Leitfähigkeitstype gezeigt, welcher die eine Platte des Kondensators bildet. Auf den Halbleiterkörper 15a ist eine   Schichte   18 aufgedampft, welche das Dielektrikum für den Kon- densator bildet. 



   Es ist erforderlich, dass die Schichte 18 eine entsprechende Dielektrizitätskonstante aufweist und ohne jeden (chemischen) Einfluss auf den Halbleiterkörper 15a ist, wenn sie mit diesem in Berührung kommt. Siliziumoxyd wurde als brauchbares Material für eine solche Dielektrizitätsschichte 18 er- kannt und kann durch Aufdampfen oder durch thermischeOxydationsverfahren auf den Körper 15a auf- gebracht werden. Das Plättchen 19 bildet die andere Platte des Kondensators und ist durch Aufdampfen eines leitenden Materials auf die Schichte 18 gebildet. 



   Gold und Aluminium wurden als zur Herstellung des Plättchens 19 brauchbar befunden. Ein ohmscher Kontakt 17a ist am Körper des Halbleitermaterials 15a   vorgesehen, während die   Verbin- dung zum Plättchen 19 durch irgendeinen elektrischen Kontakt (nicht gezeigt) hergestellt werden kann. 



   Kondensatoren, die in der an Hand der Fig. 2 beschriebenen Weise hergestellt sind, zeigen viel stabilere Eigenschaften als Kondensatoren, die nur durch einen Übergang gebildet sind, wie etwa der Kondensator, der in Fig. 1 gezeigt ist und durch einen pn-Übergang gebildet ist. Weiters können Kon- densatoren gemäss Fig. 2 auch als einzelnes Schaltelement oder Einzelteil erzeugt werden. Als weiterer Vorteil solcher Kondensatoren ergibt sich, dass sie auch in einem bestimmten Gebiet eines Körpers von halbleitendem Material, angrenzend an andere Schaltelemente oder Einzelteile, gebildet werden können, so dass eine komplette elektrische Schaltung, solche Kondensatoren mit eingeschlossen, auf einem einzigen Körper von halbleitendem Material hergestellt werden kann. 



   Bei einem Kondensator des Aufbaues nach Fig.1 können sich Ladungsträger an den einander gegen- überliegenden Seiten des   pn- Überganges ansammeln   und hiedurch den Effekt der Kapazität hervorbringen. 



  Wie aus Fig. 1 hervorgeht, sind derartige Kondensatoren aber auch Dioden und müssen dementsprechend innerhalb der Schaltung richtig polarisiert sein. Nichtpolarisierte Kondensatoren können so hergestellt werden, dass zwei solcher Übergänge gegenpolig hintereinandergeschaltet werden ("Rücken an Rücken"). 



   Wenngleich polarisierte Kondensatoren eine ausgeprägte Spannungsabhängigkeit zeigen, so ist diese Abhängigkeit   in einem wenn auch geringerem Ausmass   bei geringen Spannungen auch in der nicht-polarisierten Konfiguration vorhanden. 



   Obwohl die Erfindung an Hand von bestimmten Ausführungsformen gezeigt und erläutert worden ist, ist es klar, dass Abänderungen möglich sind, ohne den Rahmen der Erfindung zu verlassen. Derartige Ver- änderungen und Modifikationen fallen   natürlich   in das Gebiet der Erfindung. 



    PATENTANSPRÜCHE :    
1. Kondensator mit einer Dielektrikum-Schichte auf einem seiner Beläge und mit einem leitenden Belag, welcher auf der Dielektrikum-Schichte aufliegt, dadurch gekennzeichnet, dass der erstgenannte Belag aus einem Einkristall-Halbleitermaterial besteht, welches aus der Gruppe, die im   wesentlichen von Silizium, Germanium u : id intermetallischen Legierungen gebildet ist, ausgewählt   ist, und dass die Dielektrikum-Schichte aus einem Siliziumoxyd besteht.

Claims (1)

  1. 2. Kondensator nach Anspruch 1, dadurch gekennzeichnet, dass der erstgenannte Belag ein Bereich eines Halbleiter-Einkristallkörpers ist, welcher zumindest noch ein weiteres Schaltelement in sich oder auf sich trägt.
    3. Verfahren zur Herstellung eines Kondensators nach einem oder beiden der vorhergehenden Ansprüche, wobei der erstgenannte Belag von Silizium gebildet ist, dadurch gekennzeichnet, dass die Dielektrikum-Schichte durch Oberflächen-Oxydieren des Siliziumkörpers gebildet wird.
AT926861A 1959-02-06 1960-02-06 Kondensator und Verfahren zu seiner Herstellung AT247482B (de)

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US791602A US3138743A (en) 1959-02-06 1959-02-06 Miniaturized electronic circuits
US792840A US3138747A (en) 1959-02-06 1959-02-12 Integrated semiconductor circuit device
US352380A US3261081A (en) 1959-02-06 1964-03-16 Method of making miniaturized electronic circuits

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MY6900287A (en) 1969-12-31

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