DK104008C - Som en enhed udformet mikrominiaturehalvlederkredsløb. - Google Patents
Som en enhed udformet mikrominiaturehalvlederkredsløb.Info
- Publication number
- DK104008C DK104008C DK258465AA DK258465A DK104008C DK 104008 C DK104008 C DK 104008C DK 258465A A DK258465A A DK 258465AA DK 258465 A DK258465 A DK 258465A DK 104008 C DK104008 C DK 104008C
- Authority
- DK
- Denmark
- Prior art keywords
- semiconductor circuit
- unit designed
- microminiature semiconductor
- microminiature
- designed
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
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- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/98—Utilizing process equivalents or options
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Local Oxidation Of Silicon (AREA)
- Thyristors (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US791602A US3138743A (en) | 1959-02-06 | 1959-02-06 | Miniaturized electronic circuits |
US792840A US3138747A (en) | 1959-02-06 | 1959-02-12 | Integrated semiconductor circuit device |
US352380A US3261081A (en) | 1959-02-06 | 1964-03-16 | Method of making miniaturized electronic circuits |
Publications (1)
Publication Number | Publication Date |
---|---|
DK104008C true DK104008C (da) | 1966-03-21 |
Family
ID=27408060
Family Applications (7)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK258365AA DK104007C (da) | 1959-02-06 | 1960-02-05 | Mikrominiaturehalvlederapparat udformet som en enhed samt fremgangsmåde til fremstilling deraf. |
DK258465AA DK104008C (da) | 1959-02-06 | 1960-02-05 | Som en enhed udformet mikrominiaturehalvlederkredsløb. |
DK258165AA DK104006C (da) | 1959-02-06 | 1960-02-05 | Mikrominiaturehalvlederapparat. |
DK258265AA DK104470C (da) | 1959-02-06 | 1960-02-05 | Mikrominiaturehalvlederapparat udformet som en enhed. |
DK258565AA DK104185C (da) | 1959-02-06 | 1960-02-05 | Halvlederapparat. |
DK258665AA DK104005C (da) | 1959-02-06 | 1960-02-05 | Kondensator bestående af en elektrode med et derpå anbragt dielektrisk lag og et oven på det dielektriske lag liggende lag af ledende materiale samt fremgangsmåde til dens fremstilling. |
DK45460AA DK103790C (da) | 1959-02-06 | 1960-02-05 | Mikrominiaturehalvlederapparat og fremgangsmåde til fremstilling af et sådant. |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK258365AA DK104007C (da) | 1959-02-06 | 1960-02-05 | Mikrominiaturehalvlederapparat udformet som en enhed samt fremgangsmåde til fremstilling deraf. |
Family Applications After (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK258165AA DK104006C (da) | 1959-02-06 | 1960-02-05 | Mikrominiaturehalvlederapparat. |
DK258265AA DK104470C (da) | 1959-02-06 | 1960-02-05 | Mikrominiaturehalvlederapparat udformet som en enhed. |
DK258565AA DK104185C (da) | 1959-02-06 | 1960-02-05 | Halvlederapparat. |
DK258665AA DK104005C (da) | 1959-02-06 | 1960-02-05 | Kondensator bestående af en elektrode med et derpå anbragt dielektrisk lag og et oven på det dielektriske lag liggende lag af ledende materiale samt fremgangsmåde til dens fremstilling. |
DK45460AA DK103790C (da) | 1959-02-06 | 1960-02-05 | Mikrominiaturehalvlederapparat og fremgangsmåde til fremstilling af et sådant. |
Country Status (10)
Country | Link |
---|---|
US (3) | US3138743A (de) |
JP (1) | JPS6155256B1 (de) |
AT (1) | AT247482B (de) |
CH (8) | CH410194A (de) |
DE (8) | DE1196299C2 (de) |
DK (7) | DK104007C (de) |
GB (14) | GB945749A (de) |
MY (14) | MY6900290A (de) |
NL (7) | NL6608451A (de) |
SE (1) | SE314440B (de) |
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DE1208012C2 (de) * | 1959-08-06 | 1966-10-20 | Telefunken Patent | Flaechentransistor fuer hohe Frequenzen mit einer Begrenzung der Emission des Emitters und Verfahren zum Herstellen |
US3202891A (en) * | 1960-11-30 | 1965-08-24 | Gen Telephone & Elect | Voltage variable capacitor with strontium titanate dielectric |
BE623677A (de) * | 1961-10-20 | |||
NL298196A (de) * | 1962-09-22 | |||
US3235945A (en) * | 1962-10-09 | 1966-02-22 | Philco Corp | Connection of semiconductor elements to thin film circuits using foil ribbon |
GB1047390A (de) * | 1963-05-20 | 1900-01-01 | ||
US3300832A (en) * | 1963-06-28 | 1967-01-31 | Rca Corp | Method of making composite insulatorsemiconductor wafer |
BE650116A (de) * | 1963-07-05 | 1900-01-01 | ||
US3290758A (en) * | 1963-08-07 | 1966-12-13 | Hybrid solid state device | |
US3264493A (en) * | 1963-10-01 | 1966-08-02 | Fairchild Camera Instr Co | Semiconductor circuit module for a high-gain, high-input impedance amplifier |
US3341755A (en) * | 1964-03-20 | 1967-09-12 | Westinghouse Electric Corp | Switching transistor structure and method of making the same |
US3323071A (en) * | 1964-07-09 | 1967-05-30 | Nat Semiconductor Corp | Semiconductor circuit arrangement utilizing integrated chopper element as zener-diode-coupled transistor |
US3274670A (en) * | 1965-03-18 | 1966-09-27 | Bell Telephone Labor Inc | Semiconductor contact |
US3430110A (en) * | 1965-12-02 | 1969-02-25 | Rca Corp | Monolithic integrated circuits with a plurality of isolation zones |
US3486085A (en) * | 1966-03-30 | 1969-12-23 | Intelligent Instr Inc | Multilayer integrated circuit structure |
US3562560A (en) * | 1967-08-23 | 1971-02-09 | Hitachi Ltd | Transistor-transistor logic |
US3521134A (en) * | 1968-11-14 | 1970-07-21 | Hewlett Packard Co | Semiconductor connection apparatus |
US4416049A (en) * | 1970-05-30 | 1983-11-22 | Texas Instruments Incorporated | Semiconductor integrated circuit with vertical implanted polycrystalline silicon resistor |
CA1007308A (en) * | 1972-12-29 | 1977-03-22 | Jack A. Dorler | Cross-coupled capacitor for ac performance tuning |
US4285001A (en) * | 1978-12-26 | 1981-08-18 | Board Of Trustees Of Leland Stanford Jr. University | Monolithic distributed resistor-capacitor device and circuit utilizing polycrystalline semiconductor material |
US4603372A (en) * | 1984-11-05 | 1986-07-29 | Direction De La Meteorologie Du Ministere Des Transports | Method of fabricating a temperature or humidity sensor of the thin film type, and sensors obtained thereby |
US5144158A (en) * | 1984-11-19 | 1992-09-01 | Fujitsu Limited | ECL latch circuit having a noise resistance circuit in only one feedback path |
FR2596922B1 (fr) * | 1986-04-04 | 1988-05-20 | Thomson Csf | Resistance integree sur un substrat semi-conducteur |
EP1211732A4 (de) * | 1999-08-30 | 2005-08-10 | Inst Biophysics Cn Acad Sci | Diode mit paarallelen platten |
KR100368930B1 (ko) * | 2001-03-29 | 2003-01-24 | 한국과학기술원 | 반도체 기판 위에 높이 떠 있는 3차원 금속 소자, 그 회로모델, 및 그 제조방법 |
US7415421B2 (en) * | 2003-02-12 | 2008-08-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for implementing an engineering change across fab facilities |
US7297589B2 (en) | 2005-04-08 | 2007-11-20 | The Board Of Trustees Of The University Of Illinois | Transistor device and method |
US7741971B2 (en) * | 2007-04-22 | 2010-06-22 | James Neil Rodgers | Split chip |
JP2009231891A (ja) * | 2008-03-19 | 2009-10-08 | Nec Electronics Corp | 半導体装置 |
US8786355B2 (en) * | 2011-11-10 | 2014-07-22 | Qualcomm Incorporated | Low-power voltage reference circuit |
US9900943B2 (en) | 2016-05-23 | 2018-02-20 | On-Bright Electronics (Shanghai) Co., Ltd. | Two-terminal integrated circuits with time-varying voltage-current characteristics including phased-locked power supplies |
CN105979626B (zh) | 2016-05-23 | 2018-08-24 | 昂宝电子(上海)有限公司 | 包括锁相电源的具有时变电压电流特性的双端子集成电路 |
US10872950B2 (en) | 2016-10-04 | 2020-12-22 | Nanohenry Inc. | Method for growing very thick thermal local silicon oxide structures and silicon oxide embedded spiral inductors |
US11325093B2 (en) | 2020-01-24 | 2022-05-10 | BiologIC Technologies Limited | Modular reactor systems and devices, methods of manufacturing the same and methods of performing reactions |
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US2935668A (en) * | 1951-01-05 | 1960-05-03 | Sprague Electric Co | Electrical capacitors |
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DE1672315U (de) * | 1952-07-29 | 1954-02-25 | Licentia Gmbh | Gleichrichter aus einem halbleitermaterial, das mit hoher stromdichte belastet werden kann. |
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US2994834A (en) * | 1956-02-29 | 1961-08-01 | Baldwin Piano Co | Transistor amplifiers |
US2916408A (en) * | 1956-03-29 | 1959-12-08 | Raytheon Co | Fabrication of junction transistors |
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US2897295A (en) * | 1956-06-28 | 1959-07-28 | Honeywell Regulator Co | Cascaded tetrode transistor amplifier |
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DE1040700B (de) * | 1956-11-16 | 1958-10-09 | Siemens Ag | Verfahren zur Herstellung eines Diffusionstransistors |
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US2910634A (en) * | 1957-05-31 | 1959-10-27 | Ibm | Semiconductor device |
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GB800221A (en) * | 1957-09-10 | 1958-08-20 | Nat Res Dev | Improvements in or relating to semi-conductor devices |
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-
0
- GB GB945740D patent/GB945740A/en active Active
- GB GB945742D patent/GB945742A/en active Active
- GB GB945747D patent/GB945747A/en active Active
-
1959
- 1959-02-06 US US791602A patent/US3138743A/en not_active Expired - Lifetime
- 1959-02-12 US US792840A patent/US3138747A/en not_active Expired - Lifetime
-
1960
- 1960-02-02 GB GB32744/63A patent/GB945749A/en not_active Expired
- 1960-02-02 GB GB3836/63A patent/GB945738A/en not_active Expired
- 1960-02-02 GB GB27542/63A patent/GB945746A/en not_active Expired
- 1960-02-02 GB GB28005/60D patent/GB945748A/en not_active Expired
- 1960-02-02 GB GB27541/63A patent/GB945745A/en not_active Expired
- 1960-02-02 GB GB27326/63A patent/GB945743A/en not_active Expired
- 1960-02-02 GB GB27195/63A patent/GB945739A/en not_active Expired
- 1960-02-02 GB GB5691/62A patent/GB945737A/en not_active Expired
- 1960-02-02 GB GB27540/63A patent/GB945744A/en not_active Expired
- 1960-02-02 GB GB3633/60A patent/GB945734A/en not_active Expired
- 1960-02-02 GB GB27197/63A patent/GB945741A/en not_active Expired
- 1960-02-05 DE DE19601196299D patent/DE1196299C2/de not_active Expired
- 1960-02-05 DK DK258365AA patent/DK104007C/da active
- 1960-02-05 DK DK258465AA patent/DK104008C/da active
- 1960-02-05 DE DET27618A patent/DE1196301B/de active Pending
- 1960-02-05 DE DET27617A patent/DE1196300B/de active Pending
- 1960-02-05 DK DK258165AA patent/DK104006C/da active
- 1960-02-05 DK DK258265AA patent/DK104470C/da active
- 1960-02-05 DE DE1960T0027614 patent/DE1196297C2/de not_active Expired
- 1960-02-05 DK DK258565AA patent/DK104185C/da active
- 1960-02-05 DE DET17835A patent/DE1196295B/de active Pending
- 1960-02-05 DK DK258665AA patent/DK104005C/da active
- 1960-02-05 DE DET27615A patent/DE1196298B/de active Pending
- 1960-02-05 DE DET27613A patent/DE1196296B/de active Pending
- 1960-02-05 DK DK45460AA patent/DK103790C/da active
- 1960-02-06 CH CH131460A patent/CH410194A/fr unknown
- 1960-02-06 CH CH738764A patent/CH380824A/fr unknown
- 1960-02-06 AT AT926861A patent/AT247482B/de active
- 1960-02-06 CH CH291263A patent/CH387799A/fr unknown
- 1960-02-06 CH CH738664A patent/CH415867A/fr unknown
- 1960-02-06 CH CH738564A patent/CH416845A/fr unknown
- 1960-02-06 CH CH738964A patent/CH415869A/fr unknown
- 1960-02-06 CH CH70665A patent/CH410201A/fr unknown
- 1960-02-06 CH CH738864A patent/CH415868A/fr unknown
-
1964
- 1964-03-16 US US352380A patent/US3261081A/en not_active Expired - Lifetime
- 1964-06-23 SE SE763964A patent/SE314440B/xx unknown
- 1964-12-02 DE DE19641439754 patent/DE1439754B2/de active Pending
-
1966
- 1966-06-17 NL NL6608451A patent/NL6608451A/xx unknown
- 1966-06-17 NL NL6608449A patent/NL6608449A/xx unknown
- 1966-06-17 NL NL6608446A patent/NL6608446A/xx unknown
- 1966-06-17 NL NL6608445A patent/NL6608445A/xx unknown
- 1966-06-17 NL NL6608447A patent/NL6608447A/xx unknown
- 1966-06-17 NL NL6608452A patent/NL134915C/xx active
- 1966-06-17 NL NL6608448A patent/NL6608448A/xx unknown
-
1969
- 1969-12-31 MY MY1969290A patent/MY6900290A/xx unknown
- 1969-12-31 MY MY1969285A patent/MY6900285A/xx unknown
- 1969-12-31 MY MY1969284A patent/MY6900284A/xx unknown
- 1969-12-31 MY MY1969292A patent/MY6900292A/xx unknown
- 1969-12-31 MY MY1969286A patent/MY6900286A/xx unknown
- 1969-12-31 MY MY1969291A patent/MY6900291A/xx unknown
- 1969-12-31 MY MY1969287A patent/MY6900287A/xx unknown
- 1969-12-31 MY MY1969315A patent/MY6900315A/xx unknown
- 1969-12-31 MY MY1969300A patent/MY6900300A/xx unknown
- 1969-12-31 MY MY1969283A patent/MY6900283A/xx unknown
- 1969-12-31 MY MY1969293A patent/MY6900293A/xx unknown
- 1969-12-31 MY MY1969296A patent/MY6900296A/xx unknown
- 1969-12-31 MY MY1969301A patent/MY6900301A/xx unknown
- 1969-12-31 MY MY1969302A patent/MY6900302A/xx unknown
-
1971
- 1971-12-21 JP JP46103280A patent/JPS6155256B1/ja active Pending
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