DE1196301B - Verfahren zur Herstellung mikrominiaturisierter, integrierter Halbleiteranordnungen - Google Patents
Verfahren zur Herstellung mikrominiaturisierter, integrierter HalbleiteranordnungenInfo
- Publication number
- DE1196301B DE1196301B DET27618A DET0027618A DE1196301B DE 1196301 B DE1196301 B DE 1196301B DE T27618 A DET27618 A DE T27618A DE T0027618 A DET0027618 A DE T0027618A DE 1196301 B DE1196301 B DE 1196301B
- Authority
- DE
- Germany
- Prior art keywords
- circuit elements
- microminiaturized
- german
- production
- semiconductor devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 title claims description 8
- 238000000926 separation method Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
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- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/98—Utilizing process equivalents or options
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Local Oxidation Of Silicon (AREA)
- Thyristors (AREA)
- Recrystallisation Techniques (AREA)
Description
BUNDESREPUBLIK DEUTSCHLAND
DEUTSCHES
PATENTAMT
AUSLEGESCHRIFT
3ES DEUTSCHEN
PATEKTAtIiIiS
Int. α.:
HOIl
Deutsche Kl.: 21g-11/02
Nummer:
Aktenzeichen:
Anmeldetag:
Auslegetag:
Aktenzeichen:
Anmeldetag:
Auslegetag:
T 27618 VIII c/21 g
5. Februar 1960
8. Juli 1965
5. Februar 1960
8. Juli 1965
Die Erfindung bezieht sich auf ein Verfahren zur Herstellung mikrominiaturisierter, integrierter Halbleiteranordnungen,
bei welchen eine Anzahl aktiver und/oder passiver elektrischer Schaltungselemente in
einem Halbleiterplättchen gebildet werden.
Zur Miniaturisierung von Schaltungsanordnungen ist bereits der theoretische Vorschlag bekannt, einen
Siliziumblock so zu dotieren und zu formen, daß er vier normalen Transistoren und vier Widerständen
äquivalent ist, wobei den Transistoren zwei Emitterzonen und zwei Kollektorzonen gemeinsam sind.
Weitere Widerstände und Kondensatoren sind unter Einfügung von isolierenden Schichten in Form von
Filmen unmittelbar so auf dem Siliziumblock gebildet, daß alle Schaltungselemente zusammen einen
Multivibrator bilden. Zu diesem Zweck sind parallel zu der Ober- und Unterseite des Siliziumblocks
zwei pn-Übergänge gebildet, die sich zu den Seitenflächen des Blocks erstrecken. Zur gegenseitigen
Trennung der einzelnen Transistoren und Widerstände sind Durchbohrungen von den Seitenflächen
her quer durch den Block sowie verschiedene Einschnitte gebildet, so daß schließlich die vier Ecken
des Blocks je einen Transistor darstellen, deren Kollektor- und Emitterzonen zum Teil durch stehengebliebene
Siliziumbrücken verbunden sind, welche die Rolle von Widerständen bilden. Zur Vervollständigung
der Schaltung sind Kontakte an den verschiedenen Flächen des Blocks, einschließlich der
Seitenflächen, sowie Verbindungsleiter zu den aufgebrachten filmförmigen Schaltungselementen angebracht.
Die bei diesem geplanten Multivibrator zur Trennung der Schaltungselemente erforderliche mechanische
Herstellung von Einschnitten und Durchbohrungen ist um so schwieriger, je kleiner die Abmessungen
des Halbleiterblocks sind. Der Miniaturisierung sind dadurch Grenzen gesetzt. Ferner ist die
Zahl der Schaltungselemente begrenzt, die auf diese Weise voneinander getrennt werden können, und die
zu trennenden Schaltungselemente müssen auch in bestimmter Anordnung vorliegen, damit die Einschnitte
und Durchbohrungen angebracht werden können, ohne daß die mechanische Festigkeit zu
sehr beeinträchtigt wird. Schließlich eignen sich solche mechanischen Bearbeitungsvorgänge, die von
verschiedenen Seiten aus an dem Halbleiterblock vorgenommen werden müssen, nur schlecht für eine
automatisierte Massenfertigung.
Ziel der Erfindung ist die Schaffung eines Verfahrens, mit welchem die erforderliche Trennung
der Schaltungselemente von mikrominiaturisierten, integrierten Halbleiterschaltungsanordnungen ohne
Verfahren zur Herstellung mikrominiaturisierter, integrierter Halbleiteranordnungen
Anmelder:
Texas Instruments Incorporated,
Dallas, Tex. (V. St. A.)
Dallas, Tex. (V. St. A.)
Vertreter:
Dipl.-Ing. E. Prinz, Dr. rer. nat. G. Hauser
und Dipl.-Ing. G. Leiser, Patentanwälte,
München-Pasing, Ernsbergerstr. 19
und Dipl.-Ing. G. Leiser, Patentanwälte,
München-Pasing, Ernsbergerstr. 19
Als Erfinder benannt:
Jack St. Clair Kilby, Dallas, Tex. (V. St. A.)
Beanspruchte Priorität:
ao V. St. v. Amerika vom 6. Februar 1959 (791 602),
vom 12. Februar 1959 (792 840)
as mechanische Bearbeitung unter Anwendung von
Verfahrensschritten möglich ist, die mit den zur Herstellung der Schaltungselemente angewendeten Verfahrensschritten,
wie Maskierung und Diffusion vereinbar sind.
Nach der Erfindung wird dies dadurch erreicht, daß zur Abgrenzung des für jedes der Schaltungselemente
verwendeten Gebietes oder zur Schaffung der erforderlichen elektrischen Trennung zwischen
den Schaltungselementen in das Innere eines eigenleitenden Halbleiterplättchens Störstoffe an entsprechenden
Stellen eindiffundiert werden.
Bei dem erfindungsgemäßen Verfahren erfolgt die elektrische Trennung zwischen den Schaltungselementen im Innern des Halbleiterplättchens durch
den hohen Widerstand des eigenleitenden Halbleitermaterials, der nur an den die Schaltungselemente
bildenden Gebieten durch die eindiffundierten Störstoffe herabgesetzt wird. Es ist daher
möglich, eine beliebige Zahl von gleichartigen oder verschiedenartigen Schaltungselementen in beliebiger
Anordnung in einem einzigen Halbleiterplättchen zu bilden, ohne daß diese sich gegenseitig beeinflussen.
Die Bildung dieser Schaltungselemente durch Diffusionsverfahren eignet sich besonders für eine Massenfertigung
und erlaubt die Herstellung von integrierten Halbleiterschaltungsanordnungen von äußerst
kleinen Abmessungen mit großer Präzision.
509 599/300
Das erfindungsgemäße Verfahren wird beispielsweise so durchgeführt, daß von einem Plättchen aus
einkristallinem Halbleitermaterial mit Eigenleitfähigkeit ausgegangen wird. Ein Plättchen ist ein
Körper mit zwei im wesentlichen parallelen Hauptflächen, deren Abmessungen groß gegen die Dicke
des Plättchens sind. In diesem Plättchen werden Schaltungselemente an der einen Hauptfläche dadurch
abgegrenzt, daß der Widerstand des eigenleitenden Halbleitermaterials durch Eindiffundieren
von Störstoffen an den entsprechenden Stellen herabgesetzt wird. Auf diese Weise können beispielsweise
Stromwege niedrigeren Widerstands gebildet werden, welche die Rolle von elektrischen Widerständen
spielen und durch das sie umgebende eigenleitende Material von den anderen im gleichen HaIbleiterplättchen
gebildeten Schaltungselementen praktisch isoliert sind.
Claims (1)
- Patentanspruch:Verfahren zur Herstellung mikrominiaturisierter, integrierter Halbleiteranordnungen, bei welchem eine Anzahl aktiver und/oder passiver elektrischer Schaltungselemente in einem HaIbleiterplättchen gebildet werden, dadurch gekennzeichnet, daß zur Abgrenzung des für jedes der Schaltungselemente verwendeten Gebietes oder zur Schaffung der erforderlichen elektrischen Trennung zwischen den Schaltungselementen in das Innere eines eigenleitenden Halbleiterplättchens Störstoffe an entsprechenden Stellen eindiffundiert werden.In Betracht gezogene Druckschriften:Deutsche Auslegeschriften Nr. 1 011 081, 1040 700;deutsche Patentschriften Nr. 833 366, 949 422; deutsches Gebrauchsmuster Nr. 1 672 315;britische Patentschriften Nr. 736 289, 761926, 805 207; ■■-·■belgische Patentschrift Nr. 550 586;USA.-Patentschriften Nr. 2 493 199, 2 629 802, 2 660 624, 2 662 957, 2 663 806, 2 663 830, 2 667 607, 2 680 220, 2 709 232, 2 735 948, 2 748 041, 2 816 228, 2 817 048,2 713 644,
2 824 977,2 836 776, 2 754 431, 2 847 583,2 856 544, 2 858 489, 2 878 147, 2 897 295, 2 910 634, 2 915 647, 2 916 408, 2 922 937, 2 935 668, 2 944 165, 2 967 952, 2 976 426,2 994 834, 2 995 686, 2 998 550, 3 005 937,3 022 472, 3 038 085, 3 070 466;Electronic & Radio Engineer, November S. 429;Aviation Week, April 8, 1957, S. 86 bis 94; Instruments & Automation, April 1957, S. 667 bis 668;
a5 Electronics, 7. 8. 1959, S. 110 bis 111; »Proceedings of an International Symposium onElectronic Components« by Dummer, S.4, Fig. 19, Royal Radar Establishment Malvern, England, bis 26. September 1957, veröffentlicht im United Kingdom August 1958;Control Engineering, Februar 1958, S. 31/32, »Army develops printed Transistors«.509 599/300 6.65 © Bandesdruckerei Berlin
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US791602A US3138743A (en) | 1959-02-06 | 1959-02-06 | Miniaturized electronic circuits |
US792840A US3138747A (en) | 1959-02-06 | 1959-02-12 | Integrated semiconductor circuit device |
US352380A US3261081A (en) | 1959-02-06 | 1964-03-16 | Method of making miniaturized electronic circuits |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1196301B true DE1196301B (de) | 1965-07-08 |
Family
ID=27408060
Family Applications (8)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19601196299D Expired DE1196299C2 (de) | 1959-02-06 | 1960-02-05 | Mikrominiaturisierte, integrierte halbleiterschaltungsanordnung und verfahren zu ihrer herstellung |
DET27618A Pending DE1196301B (de) | 1959-02-06 | 1960-02-05 | Verfahren zur Herstellung mikrominiaturisierter, integrierter Halbleiteranordnungen |
DET27617A Pending DE1196300B (de) | 1959-02-06 | 1960-02-05 | Mikrominiaturisierte, integrierte Halbleiter-schaltungsanordnung |
DE1960T0027614 Expired DE1196297C2 (de) | 1959-02-06 | 1960-02-05 | Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung |
DET17835A Pending DE1196295B (de) | 1959-02-06 | 1960-02-05 | Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung |
DET27615A Pending DE1196298B (de) | 1959-02-06 | 1960-02-05 | Verfahren zur Herstellung einer mikrominiaturisierten, integrierten Halbleiterschaltungsanordnung |
DET27613A Pending DE1196296B (de) | 1959-02-06 | 1960-02-05 | Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung |
DE19641439754 Pending DE1439754B2 (de) | 1959-02-06 | 1964-12-02 | Kondensator und verfahren zu seiner herstellung |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19601196299D Expired DE1196299C2 (de) | 1959-02-06 | 1960-02-05 | Mikrominiaturisierte, integrierte halbleiterschaltungsanordnung und verfahren zu ihrer herstellung |
Family Applications After (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DET27617A Pending DE1196300B (de) | 1959-02-06 | 1960-02-05 | Mikrominiaturisierte, integrierte Halbleiter-schaltungsanordnung |
DE1960T0027614 Expired DE1196297C2 (de) | 1959-02-06 | 1960-02-05 | Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung |
DET17835A Pending DE1196295B (de) | 1959-02-06 | 1960-02-05 | Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung |
DET27615A Pending DE1196298B (de) | 1959-02-06 | 1960-02-05 | Verfahren zur Herstellung einer mikrominiaturisierten, integrierten Halbleiterschaltungsanordnung |
DET27613A Pending DE1196296B (de) | 1959-02-06 | 1960-02-05 | Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung |
DE19641439754 Pending DE1439754B2 (de) | 1959-02-06 | 1964-12-02 | Kondensator und verfahren zu seiner herstellung |
Country Status (10)
Country | Link |
---|---|
US (3) | US3138743A (de) |
JP (1) | JPS6155256B1 (de) |
AT (1) | AT247482B (de) |
CH (8) | CH410194A (de) |
DE (8) | DE1196299C2 (de) |
DK (7) | DK104007C (de) |
GB (14) | GB945749A (de) |
MY (14) | MY6900290A (de) |
NL (7) | NL6608451A (de) |
SE (1) | SE314440B (de) |
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BE623677A (de) * | 1961-10-20 | |||
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0
- GB GB945740D patent/GB945740A/en active Active
- GB GB945742D patent/GB945742A/en active Active
- GB GB945747D patent/GB945747A/en active Active
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1959
- 1959-02-06 US US791602A patent/US3138743A/en not_active Expired - Lifetime
- 1959-02-12 US US792840A patent/US3138747A/en not_active Expired - Lifetime
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1960
- 1960-02-02 GB GB32744/63A patent/GB945749A/en not_active Expired
- 1960-02-02 GB GB3836/63A patent/GB945738A/en not_active Expired
- 1960-02-02 GB GB27542/63A patent/GB945746A/en not_active Expired
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- 1960-02-02 GB GB27541/63A patent/GB945745A/en not_active Expired
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- 1960-02-02 GB GB5691/62A patent/GB945737A/en not_active Expired
- 1960-02-02 GB GB27540/63A patent/GB945744A/en not_active Expired
- 1960-02-02 GB GB3633/60A patent/GB945734A/en not_active Expired
- 1960-02-02 GB GB27197/63A patent/GB945741A/en not_active Expired
- 1960-02-05 DE DE19601196299D patent/DE1196299C2/de not_active Expired
- 1960-02-05 DK DK258365AA patent/DK104007C/da active
- 1960-02-05 DK DK258465AA patent/DK104008C/da active
- 1960-02-05 DE DET27618A patent/DE1196301B/de active Pending
- 1960-02-05 DE DET27617A patent/DE1196300B/de active Pending
- 1960-02-05 DK DK258165AA patent/DK104006C/da active
- 1960-02-05 DK DK258265AA patent/DK104470C/da active
- 1960-02-05 DE DE1960T0027614 patent/DE1196297C2/de not_active Expired
- 1960-02-05 DK DK258565AA patent/DK104185C/da active
- 1960-02-05 DE DET17835A patent/DE1196295B/de active Pending
- 1960-02-05 DK DK258665AA patent/DK104005C/da active
- 1960-02-05 DE DET27615A patent/DE1196298B/de active Pending
- 1960-02-05 DE DET27613A patent/DE1196296B/de active Pending
- 1960-02-05 DK DK45460AA patent/DK103790C/da active
- 1960-02-06 CH CH131460A patent/CH410194A/fr unknown
- 1960-02-06 CH CH738764A patent/CH380824A/fr unknown
- 1960-02-06 AT AT926861A patent/AT247482B/de active
- 1960-02-06 CH CH291263A patent/CH387799A/fr unknown
- 1960-02-06 CH CH738664A patent/CH415867A/fr unknown
- 1960-02-06 CH CH738564A patent/CH416845A/fr unknown
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1964
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- 1964-06-23 SE SE763964A patent/SE314440B/xx unknown
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1966
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- 1966-06-17 NL NL6608449A patent/NL6608449A/xx unknown
- 1966-06-17 NL NL6608446A patent/NL6608446A/xx unknown
- 1966-06-17 NL NL6608445A patent/NL6608445A/xx unknown
- 1966-06-17 NL NL6608447A patent/NL6608447A/xx unknown
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1969
- 1969-12-31 MY MY1969290A patent/MY6900290A/xx unknown
- 1969-12-31 MY MY1969285A patent/MY6900285A/xx unknown
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- 1969-12-31 MY MY1969292A patent/MY6900292A/xx unknown
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1971
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