BE530809A - - Google Patents
Info
- Publication number
- BE530809A BE530809A BE530809DA BE530809A BE 530809 A BE530809 A BE 530809A BE 530809D A BE530809D A BE 530809DA BE 530809 A BE530809 A BE 530809A
- Authority
- BE
- Belgium
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
- G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
- G21H1/06—Cells wherein radiation is applied to the junction of different semiconductor materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US761926XA | 1953-08-03 | 1953-08-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE530809A true BE530809A (de) |
Family
ID=22130499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE530809D BE530809A (de) | 1953-08-03 |
Country Status (2)
Country | Link |
---|---|
BE (1) | BE530809A (de) |
GB (1) | GB761926A (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2998534A (en) * | 1958-09-04 | 1961-08-29 | Clevite Corp | Symmetrical junction transistor device and circuit |
GB945740A (de) * | 1959-02-06 | Texas Instruments Inc | ||
BE590576A (de) * | 1959-05-06 | |||
FR2629639A1 (en) * | 1988-04-01 | 1989-10-06 | Balkanski Minko | Self-powered integrated component of the junction type and method for its manufacture |
US5396141A (en) * | 1993-07-30 | 1995-03-07 | Texas Instruments Incorporated | Radioisotope power cells |
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0
- BE BE530809D patent/BE530809A/xx unknown
-
1954
- 1954-07-08 GB GB20073/54A patent/GB761926A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB761926A (en) | 1956-11-21 |