JPS6155256B1 - - Google Patents

Info

Publication number
JPS6155256B1
JPS6155256B1 JP46103280A JP10328071A JPS6155256B1 JP S6155256 B1 JPS6155256 B1 JP S6155256B1 JP 46103280 A JP46103280 A JP 46103280A JP 10328071 A JP10328071 A JP 10328071A JP S6155256 B1 JPS6155256 B1 JP S6155256B1
Authority
JP
Japan
Prior art keywords
circuit
circuit elements
semiconductor
semi
thin plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP46103280A
Other languages
English (en)
Inventor
Jack S Kilby
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27408060&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS6155256(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPS6155256B1 publication Critical patent/JPS6155256B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/98—Utilizing process equivalents or options

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Thyristors (AREA)
  • Recrystallisation Techniques (AREA)

Description

【図面の簡単な説明】
第１図は本発明による一体化回路を説明する図
で、第２図は同じ関係で配置せられた第１図の一
体化回路の配線図を示す図である。
【発明の詳細な説明】
本発明は、主要な表面と裏面とを有する単一の
半導体薄板に、本質的に平面状に配置された複数
の回路素子と、この薄板の外部に接続が必要とさ
れる回路素子に対し電気的に接続された複数の引
出線とを有する電子回路用の半導体装置に関する
ものである。 本発明のある目的及び効果は、次のとおりであ
る。即ち、回路素子が半導体薄板の一面上の不活
性絶縁物質上に置かれた複数の導線により容易に
相互接続し得るように、半導体薄板の一面上に、
上記表面上で相互に距離的に離間された関係に形
成された回路素子を有する一体化回路にして、こ
れにより、上記回路素子とそれらの相互接続とを
単一の構造になし、コンパクトで機械的電気的に
安定な装置で、かつ高度の複雑さの回路の多様性
を可能ならしめたものである。 本発明に用いられる回路素子はＮ型もしくはＰ
型いづれか一つの型に導電型を示す単一半導体物
質の本体を使用して適当な導電型の拡散領域を形
成しその拡散領域と半導体との間或は拡散領域自
体間にＰ−Ｎ接合を形成することにより達成され
る。本発明の原理に依れば全電子回路の成分は以
降に詳細に説明される技術の適用に依り特徴づけ
られる様に本体に組立てられる。回路の成分が半
導体物質の本体の中に組合され且つその１部を形
成している事は注意さるべき事である。 本発明に依れば電子回路の能動及受動成分或い
は回路素子は半導体の薄板の一面或いはその近く
に形成される。 その結果、得られる回路は本質的に平面状に配
置されることになる。処理工程中に半導体材料薄
板の全形を行ない、拡散により希望の各種回路素
子を適当な関係で製造することが可能である。 本発明の効果は製造製作上満足なものであり且
つマスキング・エツチング及拡散の様な限定され
た両立性ある工程が一主面から成し得るので大量
生産に適する事であり、更に能動及受動回路素子
の電気的接続の能様が融通性に富み従つて回路が
多様多様に出来ると云う点にある。 更に本発明の他の目的及効果は従来の技術より
もより少ない工程を含む新規なる小型化電子回路
を提供することである。 更に本発明は本質的に電子回路の小型化に関す
るものである。又前述の様に本発明は適当に成形
されそして拡散されたｐ−ｎ接合を形成された半
導体物質の本体の利用と、中に組込まれるか上記
半導体物質の本体の部分を構成され得る色々な回
路素子或いは成分に対し設計された成分の利用を
企図している。 本発明の他の目的、特徴及び効果は次の詳細な
記述により明白であるが、ここには本発明の好ま
しい実施例を添付図面と共に説明する。 図面に就いて詳述すると、本発明の基本原理を
より明確に理解せしめるため、本発明の好ましい
実施例について詳述する。 本発明の原理を実施している一体化回路の特別
な説明は第１図に示されているがここで金の線は
半導体薄板の一主面上の絶縁不活性物質上に敷設
される。図に示す如く、拡散Ｐ−Ｎ接合を含む単
一の結晶半導体物質の薄板は、本質的にその薄板
の一面に形成された完全にして一体化されたマル
チバイブレーター電子回路を含むように、加工さ
れ成形されている。この薄板の諸区域は種々の区
域において果されている回路素子の機能を示す記
号を付せられている。第２図は、色々な回路機能
の配線図を、第１図の半導体薄板に占める関係に
於いて示している。この第１、第２図に示された
マルチバイブレーター回路は必要とされる工程技
術を説明するものとして示されている。 まづ、適当な比抵抗の半導体薄板（なるべくは
シリコン或いはゲルマニウムが望ましい）が一面
においてラツプ加工され磨かれる。この設計のた
めに３オーム・センチメートルのＰ型ゲルマニウ
ムが用いられた。この薄板は、それから表面上に
深さ約0.0178mmのｎ型の層を生成するアンチモニ
ー拡散工程を受ける。この薄板はそれから5.08×
2.03mmの適当な大きさにカツトされ、磨かれてい
ない表面は薄板に0.0635mmの厚さを与えるように
ラツプ加工される。 金張りコバル引出線５０が適当な位置に薄板に
合金化する事により接続される。コバルは鉄−ニ
ツケル−コバルト合金の商品名である。それから
金がトランジスタT1，T2のベース接続５３，５
４及び抵抗蓄電器C1R8，C2R3のコンタクト５
１，５２の如き、ｎ型区域とオーミツクな接触を
なす領域５１〜５４を設けるためにマスクを通し
て蒸着される。アルミニウムはｎ層と整流接触を
形成するトランジスタのエミツタ領域５６を備え
るべく、適当な形状をしたマスクを通して蒸着さ
れる。全回路素子は単一の拡散層に関して説明さ
れたが、二重の拡散構成を用いる事も全く可能で
ある。かくして、二重の拡散はｎ−ｐ−ｎ及びｐ
−ｎ−ｐ構造両方を形成する様に用いられるだろ
う。 それから、この薄板は、イーストマンコダツク
会社により出されているイーストマン光抵抗の如
き感光性抵抗或いはラツカーで被覆され、光に対
しネガを通して露光される。現像の後に残つてい
るラツカー像は、適当な形状に薄板をエツチする
ための抵抗として用いられる。特にこのエンチン
グは、R1とR2と回路の他の部分との間に分離を
与えるための薄板を通してのスロツトを形成し、
又予め計算された形状に全部の抵抗の領域を形成
する。 化学的エツチングか電気的エツチングのどちら
かが用い得るが、電気的エツチングの方がよいと
思われる。 この段階の次に光抵抗は溶剤で取り除かれ、メ
サ領域６０は同じ写真工程によりマスクされる。
この薄板は再びエツチング液に浸され、ｎ層は露
出された領域に於いて完全に取り除かれる。 これは化学的エツチングが良い様に思われる。
それから、その光抵抗は取り除かれる。 金の線７０はそれから接続を完全にするため適
当な領域に熱的に接合され、最終的な清浄化エツ
チングが施される。金の線７０を用いる代りに接
続は何か他の方法で行なわれてもよい。本発明の
実施例によれば酸化シリコンの如き絶縁不活性物
質が電気接続が行なわれる点を除いて完全に薄板
を被覆するか或いは電気的に接続されるべき点に
接合する選ばれた部分のみを被覆するかするため
にマスクを通して半導体回路薄板に蒸着される。
金の様な導電物質はそれから必要なる電気回路接
続を行なうために絶縁物質に被着される。 試験の後にこの回路は若し必要なら汚染から保
護するために密封されてもよい。完結の装置は過
去に提起された他の装置よりも大きさが数桁少な
い。必要なる組立段階が現在トランジスタを製造
するに用いられている組立に全く似ているので、
又必要なる段階が比較的少ないために、これらの
装置はコンパクトにして本来安価にして確実なる
ものである。 抵抗及び蓄電器の設計は分布された抵抗−蓄電
器回路素子を形成する様に結合される。これはｎ
型の導電型の拡散層を有するｐ型の導電型の薄板
は面上に広い面積のコンタクト５１，５２および
裏面に引出線５０を具備する。 トランジスタは1956年ベルシステム・テクニカ
ル・ジヤーナル第35巻23頁のリー（Lee）に依り
述べられている如く薄板上に形成され、コレクタ
ー領域、拡散ｐ−ｎ接合、ベース層、ベース層と
整流接合を形成するエミツタ接触体、ベース及び
コレクターの夫々の接触体を有する。 従つて、本発明の実施例によれば複数の回路素
子、T1，T2，C1R8及びC2R3は相互に距離的に離
間され、それぞれが上述の絶縁層の下で薄板の一
主面に終端している接合により画定されている薄
い領域を含んでいることが注目されるべきであ
る。 又、シリコン酸化物絶縁体は安定で大巾の温度
範囲にわたり装置の特性を破壊しないから、その
使用がベース及びエミツタの接続がなされる温度
範囲に融通性を与えることが明白であろう。 上述した回路設計は全部単一の物質、すなわち
半導体から形成され得る故に、それら全部を、拡
散ｐ−ｎ接合を含む単一結晶半導体薄板に適当な
回路及び適正な成分値をもつ様に一体化して形作
る事が可能である。 また、複数の回路素子は前述した様に半導体薄
板の一主面上に平板状に配置され、マスキング、
エツチング及び拡散の様な両立性ある工程が一主
面から成し得るので半導体装置の大量生産に適し
ている。更に複数の回路素子の接続が絶縁物質上
で行なうことができるので回路に融通性、多様性
があると共に大量生産に適している。 この方法で為され得る回路の組立ての複雑さに
は限界がない。しかし限られた空間に為され得る
成分の型及び値には限界がありこの発明は従来の
技術に対し著しい改良を与えたものである。この
技術に於ける利益が本発明により達せられたので
本発明に対し前以つて達成された最高の成分密度
の１立方フイート当り50万に比較して１立方フイ
ート当り３千万以上の成分密度まで達成すること
は可能である。 本発明は特別な実施例を以つて示したがここに
示唆した発明着想が実際離れる事なく変更及び変
型が可能であることは明白である。従つてこの様
な変更及び変型は発明の範囲の中に入ると思料す
る。
【特許請求の範囲】
１ 複数の回路素子を含み主要な表面及び裏面を
有する単一の半導体薄板と； 上記回路素子のうち上記薄板の外部に接続が必
要とされる回路素子に対し電気的に接続された複
数の引出線と； を有する電子回路用の半導体装置において、 (a) 上記の複数の回路素子は、上記薄板の種々の
区域に互に距離的に離間して形成されており、 (b) 上記の複数の回路素子は、上記薄板の上記主
要な表面に終る接合により画定されている薄い
領域をそれぞれ少くともひとつ含み； (c) 不活性絶縁物質とその上に被着された複数の
回路接続用導電物質とが、上記薄い領域の形成
されている上記主要な表面の上に形成されてお
り； (d) 上記互に距離的に離間した複数の回路素子中
の選ばれた薄い領域が、上記不活性絶縁物質上
の複数の上記回路接続用導電物質によつて電気
的に接続され、上記電子回路を達成する為に上
記複数の回路素子の間に必要なる電気回路接続
がなされており； (e) 上記電子回路が、上記複数の回路素子及び上
記不活性絶縁物質上の上記回路接続用導電物質
によつて本質的に平面状に配置されている； ことを特徴とする半導体装置。
JP46103280A 1959-02-06 1971-12-21 Pending JPS6155256B1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US791602A US3138743A (en) 1959-02-06 1959-02-06 Miniaturized electronic circuits
US792840A US3138747A (en) 1959-02-06 1959-02-12 Integrated semiconductor circuit device
US352380A US3261081A (en) 1959-02-06 1964-03-16 Method of making miniaturized electronic circuits

Publications (1)

Publication Number Publication Date
JPS6155256B1 true JPS6155256B1 (ja) 1986-11-27

Family

ID=27408060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46103280A Pending JPS6155256B1 (ja) 1959-02-06 1971-12-21

Country Status (10)

Country Link
US (3) US3138743A (ja)
JP (1) JPS6155256B1 (ja)
AT (1) AT247482B (ja)
CH (8) CH410194A (ja)
DE (8) DE1196299C2 (ja)
DK (7) DK104007C (ja)
GB (14) GB945749A (ja)
MY (14) MY6900290A (ja)
NL (7) NL6608451A (ja)
SE (1) SE314440B (ja)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208012C2 (de) * 1959-08-06 1966-10-20 Telefunken Patent Flaechentransistor fuer hohe Frequenzen mit einer Begrenzung der Emission des Emitters und Verfahren zum Herstellen
US3202891A (en) * 1960-11-30 1965-08-24 Gen Telephone & Elect Voltage variable capacitor with strontium titanate dielectric
BE623677A (ja) * 1961-10-20
NL298196A (ja) * 1962-09-22
US3235945A (en) * 1962-10-09 1966-02-22 Philco Corp Connection of semiconductor elements to thin film circuits using foil ribbon
GB1047390A (ja) * 1963-05-20 1900-01-01
US3300832A (en) * 1963-06-28 1967-01-31 Rca Corp Method of making composite insulatorsemiconductor wafer
BE650116A (ja) * 1963-07-05 1900-01-01
US3290758A (en) * 1963-08-07 1966-12-13 Hybrid solid state device
US3264493A (en) * 1963-10-01 1966-08-02 Fairchild Camera Instr Co Semiconductor circuit module for a high-gain, high-input impedance amplifier
US3341755A (en) * 1964-03-20 1967-09-12 Westinghouse Electric Corp Switching transistor structure and method of making the same
US3323071A (en) * 1964-07-09 1967-05-30 Nat Semiconductor Corp Semiconductor circuit arrangement utilizing integrated chopper element as zener-diode-coupled transistor
US3274670A (en) * 1965-03-18 1966-09-27 Bell Telephone Labor Inc Semiconductor contact
US3430110A (en) * 1965-12-02 1969-02-25 Rca Corp Monolithic integrated circuits with a plurality of isolation zones
US3486085A (en) * 1966-03-30 1969-12-23 Intelligent Instr Inc Multilayer integrated circuit structure
US3562560A (en) * 1967-08-23 1971-02-09 Hitachi Ltd Transistor-transistor logic
US3521134A (en) * 1968-11-14 1970-07-21 Hewlett Packard Co Semiconductor connection apparatus
US4416049A (en) * 1970-05-30 1983-11-22 Texas Instruments Incorporated Semiconductor integrated circuit with vertical implanted polycrystalline silicon resistor
CA1007308A (en) * 1972-12-29 1977-03-22 Jack A. Dorler Cross-coupled capacitor for ac performance tuning
US4285001A (en) * 1978-12-26 1981-08-18 Board Of Trustees Of Leland Stanford Jr. University Monolithic distributed resistor-capacitor device and circuit utilizing polycrystalline semiconductor material
US4603372A (en) * 1984-11-05 1986-07-29 Direction De La Meteorologie Du Ministere Des Transports Method of fabricating a temperature or humidity sensor of the thin film type, and sensors obtained thereby
US5144158A (en) * 1984-11-19 1992-09-01 Fujitsu Limited ECL latch circuit having a noise resistance circuit in only one feedback path
FR2596922B1 (fr) * 1986-04-04 1988-05-20 Thomson Csf Resistance integree sur un substrat semi-conducteur
EP1211732A4 (en) * 1999-08-30 2005-08-10 Inst Biophysics Cn Acad Sci PARALLEL PLATE DIODE
KR100368930B1 (ko) * 2001-03-29 2003-01-24 한국과학기술원 반도체 기판 위에 높이 떠 있는 3차원 금속 소자, 그 회로모델, 및 그 제조방법
US7415421B2 (en) * 2003-02-12 2008-08-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for implementing an engineering change across fab facilities
US7297589B2 (en) 2005-04-08 2007-11-20 The Board Of Trustees Of The University Of Illinois Transistor device and method
US7741971B2 (en) * 2007-04-22 2010-06-22 James Neil Rodgers Split chip
JP2009231891A (ja) * 2008-03-19 2009-10-08 Nec Electronics Corp 半導体装置
US8786355B2 (en) * 2011-11-10 2014-07-22 Qualcomm Incorporated Low-power voltage reference circuit
US9900943B2 (en) 2016-05-23 2018-02-20 On-Bright Electronics (Shanghai) Co., Ltd. Two-terminal integrated circuits with time-varying voltage-current characteristics including phased-locked power supplies
CN105979626B (zh) 2016-05-23 2018-08-24 昂宝电子（上海）有限公司 包括锁相电源的具有时变电压电流特性的双端子集成电路
US10872950B2 (en) 2016-10-04 2020-12-22 Nanohenry Inc. Method for growing very thick thermal local silicon oxide structures and silicon oxide embedded spiral inductors
US11325093B2 (en) 2020-01-24 2022-05-10 BiologIC Technologies Limited Modular reactor systems and devices, methods of manufacturing the same and methods of performing reactions

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2493199A (en) * 1947-08-15 1950-01-03 Globe Union Inc Electric circuit component
US2660624A (en) * 1949-02-24 1953-11-24 Rca Corp High input impedance semiconductor amplifier
DE833366C (de) * 1949-04-14 1952-06-30 Siemens & Halske A G Halbleiterverstaerker
US2662957A (en) * 1949-10-29 1953-12-15 Eisler Paul Electrical resistor or semiconductor
US2680220A (en) * 1950-06-09 1954-06-01 Int Standard Electric Corp Crystal diode and triode
US2935668A (en) * 1951-01-05 1960-05-03 Sprague Electric Co Electrical capacitors
US2629802A (en) * 1951-12-07 1953-02-24 Rca Corp Photocell amplifier construction
US2842723A (en) * 1952-04-15 1958-07-08 Licentia Gmbh Controllable asymmetric electrical conductor systems
US2667607A (en) * 1952-04-26 1954-01-26 Bell Telephone Labor Inc Semiconductor circuit element
BE519804A (ja) * 1952-05-09
DE1672315U (de) * 1952-07-29 1954-02-25 Licentia Gmbh Gleichrichter aus einem halbleitermaterial, das mit hoher stromdichte belastet werden kann.
US2748041A (en) * 1952-08-30 1956-05-29 Rca Corp Semiconductor devices and their manufacture
US2663830A (en) * 1952-10-22 1953-12-22 Bell Telephone Labor Inc Semiconductor signal translating device
BE525202A (ja) * 1952-12-19
BE525823A (ja) * 1953-01-21
BE526156A (ja) * 1953-02-02
US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices
US2816228A (en) * 1953-05-21 1957-12-10 Rca Corp Semiconductor phase shift oscillator and device
BE530809A (ja) * 1953-08-03
US2976426A (en) * 1953-08-03 1961-03-21 Rca Corp Self-powered semiconductive device
DE1011081B (de) * 1953-08-18 1957-06-27 Siemens Ag Zu einem Bauelement zusammengefasste Widerstandskondensator-Kombination
BE553173A (ja) * 1954-05-10
US2713644A (en) * 1954-06-29 1955-07-19 Rca Corp Self-powered semiconductor devices
US2998550A (en) * 1954-06-30 1961-08-29 Rca Corp Apparatus for powering a plurality of semi-conducting units from a single radioactive battery
US2831787A (en) * 1954-07-27 1958-04-22 Emeis
US2847583A (en) * 1954-12-13 1958-08-12 Rca Corp Semiconductor devices and stabilization thereof
NL110715C (ja) * 1954-12-16 1900-01-01
US2824977A (en) * 1954-12-24 1958-02-25 Rca Corp Semiconductor devices and systems
US2836776A (en) * 1955-05-07 1958-05-27 Nippon Electric Co Capacitor
US2877358A (en) * 1955-06-20 1959-03-10 Bell Telephone Labor Inc Semiconductive pulse translator
US2915647A (en) * 1955-07-13 1959-12-01 Bell Telephone Labor Inc Semiconductive switch and negative resistance
US2889469A (en) * 1955-10-05 1959-06-02 Rca Corp Semi-conductor electrical pulse counting means
NL251064A (ja) * 1955-11-04
NL109817C (ja) * 1955-12-02
US2922937A (en) * 1956-02-08 1960-01-26 Gen Electric Capacitor and dielectric material therefor
US2994834A (en) * 1956-02-29 1961-08-01 Baldwin Piano Co Transistor amplifiers
US2916408A (en) * 1956-03-29 1959-12-08 Raytheon Co Fabrication of junction transistors
BE556337A (ja) * 1956-04-03
BE556305A (ja) * 1956-04-18
US2967952A (en) * 1956-04-25 1961-01-10 Shockley William Semiconductor shift register
US2814853A (en) * 1956-06-14 1957-12-03 Power Equipment Company Manufacturing transistors
US2897295A (en) * 1956-06-28 1959-07-28 Honeywell Regulator Co Cascaded tetrode transistor amplifier
US2944165A (en) * 1956-11-15 1960-07-05 Otmar M Stuetzer Semionductive device powered by light
DE1040700B (de) * 1956-11-16 1958-10-09 Siemens Ag Verfahren zur Herstellung eines Diffusionstransistors
US2866140A (en) * 1957-01-11 1958-12-23 Texas Instruments Inc Grown junction transistors
US2910634A (en) * 1957-05-31 1959-10-27 Ibm Semiconductor device
NL228981A (ja) * 1957-06-25
GB800221A (en) * 1957-09-10 1958-08-20 Nat Res Dev Improvements in or relating to semi-conductor devices
US3022472A (en) * 1958-01-22 1962-02-20 Bell Telephone Labor Inc Variable equalizer employing semiconductive element
US3038085A (en) * 1958-03-25 1962-06-05 Rca Corp Shift-register utilizing unitary multielectrode semiconductor device
US3005937A (en) * 1958-08-21 1961-10-24 Rca Corp Semiconductor signal translating devices
US2995686A (en) * 1959-03-02 1961-08-08 Sylvania Electric Prod Microelectronic circuit module
US3070466A (en) * 1959-04-30 1962-12-25 Ibm Diffusion in semiconductor material

Also Published As

Publication number Publication date
MY6900293A (en) 1969-12-31
DK104470C (da) 1966-05-23
CH415867A (fr) 1966-06-30
MY6900302A (en) 1969-12-31
GB945741A (en) 1964-01-08
CH410201A (fr) 1966-03-31
DE1439754A1 (de) 1969-12-04
DK104007C (da) 1966-03-21
CH410194A (fr) 1966-03-31
MY6900284A (en) 1969-12-31
DK103790C (da) 1966-02-21
NL6608451A (ja) 1970-07-23
DE1196300B (de) 1965-07-08
GB945738A (en) 1964-01-08
MY6900283A (en) 1969-12-31
CH415869A (fr) 1966-06-30
SE314440B (ja) 1969-09-08
US3138743A (en) 1964-06-23
GB945749A (en) 1964-01-08
CH380824A (fr) 1964-08-14
MY6900285A (en) 1969-12-31
NL6608449A (ja) 1970-07-23
US3261081A (en) 1966-07-19
NL6608447A (ja) 1970-07-23
GB945744A (en) 1964-01-08
MY6900315A (en) 1969-12-31
DK104185C (da) 1966-04-18
MY6900291A (en) 1969-12-31
GB945739A (en) 1964-01-08
DE1196301B (de) 1965-07-08
DK104005C (da) 1966-03-21
DK104006C (da) 1966-03-21
GB945745A (en) 1964-01-08
NL6608448A (ja) 1970-07-23
GB945746A (en) 1964-01-08
MY6900301A (en) 1969-12-31
NL6608446A (ja) 1970-07-23
MY6900300A (en) 1969-12-31
NL134915C (ja) 1972-04-17
GB945737A (en) 1964-01-08
MY6900290A (en) 1969-12-31
CH415868A (fr) 1966-06-30
DE1196297C2 (de) 1974-01-17
MY6900296A (en) 1969-12-31
CH387799A (fr) 1965-02-15
NL6608452A (ja) 1970-07-23
DE1439754B2 (de) 1972-04-13
DE1196296B (de) 1965-07-08
AT247482B (de) 1966-06-10
MY6900292A (en) 1969-12-31
MY6900286A (en) 1969-12-31
DE1196295B (de) 1965-07-08
GB945734A (en) 1964-01-08
DE1196299C2 (de) 1974-03-07
NL6608445A (ja) 1970-07-23
GB945740A (ja)
DE1196299B (de) 1965-07-08
GB945742A (ja)
MY6900287A (en) 1969-12-31
GB945743A (en) 1964-01-08
DE1196298B (de) 1965-07-08
GB945748A (en) 1964-01-08
US3138747A (en) 1964-06-23
GB945747A (ja)
CH416845A (fr) 1966-07-15
DK104008C (da) 1966-03-21
DE1196297B (de) 1965-07-08

Similar Documents

Publication Publication Date Title
JPS6155256B1 (ja)
US3388301A (en) Multichip integrated circuit assembly with interconnection structure
US3256587A (en) Method of making vertically and horizontally integrated microcircuitry
US3059158A (en) Protected semiconductor device and method of making it
US3404321A (en) Transistor body enclosing a submerged integrated resistor
US3566214A (en) Integrated circuit having a plurality of circuit element regions and conducting layers extending on both of the opposed common major surfaces of said circuit element regions
US3590479A (en) Method for making ambient atmosphere isolated semiconductor devices
US3697828A (en) Geometry for a pnp silicon transistor with overlay contacts
US3310711A (en) Vertically and horizontally integrated microcircuitry
US3659162A (en) Semiconductor integrated circuit device having improved wiring layer structure
US3581166A (en) Gold-aluminum leadout structure of a semiconductor device
JP2940306B2 (ja) ヘテロ接合バイポーラトランジスタ集積回路装置およびその製造方法
US3643138A (en) Semiconductor device
ES368134A1 (es) Un procedimiento de fabricacion de dispositivos semiconduc-tores.
JP2824329B2 (ja) 可変容量ダイオード装置
JPS58170062A (ja) 半導体装置
JP2757864B2 (ja) 半導体装置
JPH0110937Y2 (ja)
JPH069208B2 (ja) 半導体装置
JP2910456B2 (ja) マスタースライス方式集積回路装置
JP2924223B2 (ja) 熱電対素子
JPH0380564A (ja) 半導体集積回路装置及びその製造方法
JPH01143248A (ja) 半導体集積回路装置
JPH088263B2 (ja) 抵抗内蔵型トランジスタ
JPH0130307B2 (ja)