WO2010143321A1 - インプリント用モールドおよびその製造方法 - Google Patents

インプリント用モールドおよびその製造方法 Download PDF

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Publication number
WO2010143321A1
WO2010143321A1 PCT/JP2009/068383 JP2009068383W WO2010143321A1 WO 2010143321 A1 WO2010143321 A1 WO 2010143321A1 JP 2009068383 W JP2009068383 W JP 2009068383W WO 2010143321 A1 WO2010143321 A1 WO 2010143321A1
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WO
WIPO (PCT)
Prior art keywords
mold
crystalline polymer
surface layer
fine pattern
chain crystalline
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Application number
PCT/JP2009/068383
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English (en)
French (fr)
Japanese (ja)
Inventor
真一 仲野
伸一郎 河原
真二 松井
真 岡田
Original Assignee
ニッタ株式会社
兵庫県
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ニッタ株式会社, 兵庫県 filed Critical ニッタ株式会社
Priority to CN200980159699.3A priority Critical patent/CN102458800B/zh
Priority to KR1020117028874A priority patent/KR101355036B1/ko
Priority to JP2011518202A priority patent/JP5329661B2/ja
Publication of WO2010143321A1 publication Critical patent/WO2010143321A1/ja

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
    • B29C33/3842—Manufacturing moulds, e.g. shaping the mould surface by machining
    • B29C33/3857—Manufacturing moulds, e.g. shaping the mould surface by machining by making impressions of one or more parts of models, e.g. shaped articles and including possible subsequent assembly of the parts
    • B29C33/3878—Manufacturing moulds, e.g. shaping the mould surface by machining by making impressions of one or more parts of models, e.g. shaped articles and including possible subsequent assembly of the parts used as masters for making successive impressions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical

Definitions

  • the present invention relates to an imprint mold and a method for manufacturing the same.
  • imprint lithography a film made of a curable resin composition is formed on the surface of a substrate, the surface of the film is pressed with a mold to transfer a fine pattern of the mold, and the film on which the fine pattern is transferred is cured to form a fine film. This is a method of forming a pattern on a substrate surface.
  • the mold fine pattern formed by imprint lithography corresponds to the fine pattern of the mold used, the importance of the mold in imprint lithography is high.
  • the mold fine pattern is usually subjected to a mold release treatment using a fluorine-containing self-assembled monolayer or the like.
  • Non-Patent Document 1 When imprint lithography is performed using a mold whose mold release process has deteriorated, not only the transfer accuracy is lowered, but the mold itself is also damaged.
  • EB electron beam
  • An object of the present invention is to provide an imprint mold having high releasability and easily reproducible and a method for producing the same.
  • the imprint mold of the present invention comprises a surface layer having a fine pattern on the surface, and a support layer that supports a back surface opposite to the surface of the surface layer, and the surface layer is made of a side chain crystalline polymer. .
  • the method for producing an imprint mold of the present invention includes a step of laminating a surface layer made of a side chain crystalline polymer on a support layer, and the surface of the surface layer is a master mold having a fine pattern, Pressurizing at a temperature equal to or higher than the melting point of the crystalline polymer, and then setting the temperature of the surface layer to a temperature lower than the melting point of the side chain crystalline polymer, peeling the master mold from the surface of the surface layer, and Transferring the pattern to the surface of the surface layer.
  • the fine pattern of the mold is made of a side chain crystalline polymer having excellent releasability, it is not necessary to perform a mold release treatment on the fine pattern of the mold. Therefore, it is not necessary to perform a re-molding process on the mold fine pattern as in the prior art, and the high throughput of the imprint lithography is not impaired.
  • a fine pattern of a mold is formed by thermally imprinting a master-type fine pattern on a side chain crystalline polymer. Since the thermal imprint on the side chain crystalline polymer can be performed at a relatively low temperature, the thermal imprint can be efficiently performed in a short time to obtain the mold of the present invention. In addition, the mold can be easily reproduced by repeatedly using the master mold.
  • FIG. 1 It is a schematic side view which shows one Embodiment concerning the mold for imprint of this invention.
  • A)-(d) is process drawing which shows the manufacturing method of the mold for imprint shown in FIG.
  • A)-(d) is process drawing which shows one Embodiment which manufactures a fine structure using the mold for imprint shown in FIG. It is a scanning electron micrograph of the imprint mold obtained in the example.
  • an imprint mold 10 includes a surface layer 1 and a support layer 5.
  • the surface layer 1 is made of a side chain crystalline polymer.
  • the side chain crystalline polymer is a polymer that crystallizes at a temperature below the melting point and exhibits fluidity at a temperature above the melting point. That is, the side chain crystalline polymer reversibly causes a crystalline state and a fluid state in response to a temperature change.
  • the surface layer 1 made of the side chain crystalline polymer has a fine pattern 2 formed on the surface 1a, and the fine pattern 2 is also made of a side chain crystalline polymer.
  • the side chain crystalline polymer in the crystalline state has high releasability. Therefore, the fine pattern 2 also has high releasability, and therefore it is not necessary to perform a conventional release treatment on the fine pattern 2.
  • the melting point means a temperature at which a specific portion of the polymer originally aligned in an ordered arrangement becomes disordered by an equilibrium process, and is measured by a differential thermal scanning calorimeter (DSC) at 10 ° C./min. It is a value obtained by measuring under conditions.
  • the mold 10 is used at a temperature below the melting point at which the side chain crystalline polymer is in a crystalline state. Therefore, the melting point is preferably 30 ° C. or higher, more preferably 50 to 60 ° C.
  • the melting point is too low, the temperature range in which the mold 10 can be used becomes narrow, which is not preferable.
  • the fine pattern 2 of the mold 10 is formed by thermal imprinting as will be described later. Therefore, if the melting point is too high, it is difficult to perform thermal imprinting, which is not preferable.
  • the melting point can be arbitrarily set to a predetermined value by changing the composition of the side chain crystalline polymer.
  • the composition of the side chain crystalline polymer is, for example, 20 to 100 parts by weight of a (meth) acrylate having a linear alkyl group having 16 or more carbon atoms and (meth) acrylate 0 having an alkyl group having 1 to 6 carbon atoms.
  • a (meth) acrylate having a linear alkyl group having 16 or more carbon atoms and (meth) acrylate 0 having an alkyl group having 1 to 6 carbon atoms.
  • examples thereof include a polymer obtained by polymerizing ⁇ 70 parts by weight and 0 to 10 parts by weight of a polar monomer.
  • Examples of the (meth) acrylate having a linear alkyl group having 16 or more carbon atoms include 16 to 16 carbon atoms such as cetyl (meth) acrylate, stearyl (meth) acrylate, eicosyl (meth) acrylate, and behenyl (meth) acrylate.
  • Examples of the (meth) acrylate having 22 linear alkyl groups include (meth) acrylate having an alkyl group having 1 to 6 carbon atoms, such as methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) ) Acrylate, hexyl (meth) acrylate and the like.
  • Examples of the polar monomer include carboxyl group-containing ethylenically unsaturated monomers such as acrylic acid, methacrylic acid, crotonic acid, itaconic acid, maleic acid and fumaric acid; 2 -Hydroxyethyl (meth) acrylate, 2 Hydroxypropyl (meth) acrylate, 2-hydroxyhexyl (meth) ethylenically unsaturated monomer having a hydroxyl group such as acrylate and the like, which may be used alone or in combination.
  • carboxyl group-containing ethylenically unsaturated monomers such as acrylic acid, methacrylic acid, crotonic acid, itaconic acid, maleic acid and fumaric acid
  • 2 -Hydroxyethyl (meth) acrylate 2 Hydroxypropyl (meth) acrylate
  • the polymerization method is not particularly limited, and for example, a solution polymerization method, a bulk polymerization method, a suspension polymerization method, an emulsion polymerization method and the like can be employed.
  • the monomer when the solution polymerization method is adopted, the monomer can be polymerized by mixing the monomer exemplified above in a solvent and stirring at about 40 to 90 ° C. for about 2 to 10 hours.
  • the weight average molecular weight of the side chain crystalline polymer is 100,000 or more, preferably 400,000 to 800,000. If the weight average molecular weight is too small, the strength of the fine pattern 2 may be lowered and easily damaged. On the other hand, if the weight average molecular weight is too large, even if the side chain crystalline polymer is heated to a temperature equal to or higher than the melting point, it becomes difficult to exhibit fluidity, and thus thermal imprinting becomes difficult.
  • the weight average molecular weight is a value obtained by measuring a side chain crystalline polymer by gel permeation chromatography (GPC) and converting the obtained measurement value to polystyrene.
  • the thickness of the surface layer 1 is suitably about 0.01 to 1,000 ⁇ m.
  • the thickness of the surface layer 1 means the thickness at which the distance between the front surface 1a and the back surface 1b opposite to the front surface 1a is the largest.
  • the fine pattern 2 is preferably a nano to micrometer scale.
  • the shape of the fine pattern 2 is not particularly limited, and a desired one can be adopted.
  • the support layer 5 supports the back surface 1 b of the surface layer 1 and imparts rigidity to the mold 10.
  • the material constituting the support layer 5 include silicon, silicone, and (SiO 2 ) glass.
  • the thickness of the support layer 5 is suitably about 10 to 1,000 ⁇ m.
  • the surface 5a of the support layer 5 that supports the surface layer 1 is subjected to a surface treatment.
  • a surface treatment includes corona discharge treatment, plasma treatment, blast treatment, chemical etching treatment, and primer treatment.
  • the surface layer 1 made of the side-chain crystalline polymer usually has UV transparency.
  • the support layer 5 is preferably made of a material having UV transparency. Thereby, since the mold 10 as a whole has UV transparency, the UV curable resin composition can be irradiated with UV through the mold 10.
  • the surface layer 1 made of a side chain crystalline polymer is laminated on the support layer 5.
  • the surface 5a of the support layer 5 on which the surface layer 1 is laminated is preferably roughened by surface treatment in order to improve adhesion with the surface layer 1.
  • the lamination is performed by applying a coating solution obtained by adding the side chain crystalline polymer to a solvent on the support layer 5 and drying it.
  • the coating can be generally performed with a knife coater, a roll coater, a calendar coater, a comma coater, or the like. Further, depending on the coating thickness and the viscosity of the coating solution, a gravure coater, a rod coater, a spin coater or the like can be used.
  • the surface layer 1 can be laminated by laminating the surface layer 1 formed into a sheet shape or a film shape by extrusion molding or calendering on the support layer 5 in addition to the above application.
  • the master mold 20 After laminating the surface layer 1 on the support layer 5, as shown in FIG. 2 (b), the master mold 20 is disposed above the surface layer 1.
  • the material constituting the master mold 20 is preferably a material having low affinity for the side chain crystalline polymer, and examples thereof include silicon, silicone, and (SiO 2 ) glass.
  • a fine pattern 21 is formed on the surface 20 a of the master mold 20 facing the surface 1 a of the surface layer 1.
  • the reverse pattern of the fine pattern 21 becomes the fine pattern 2 of the mold 10. Therefore, the fine pattern 21 has a shape opposite to the desired fine pattern 2.
  • the fine pattern 21 is preferably a nano to micrometer scale, and can be formed by EB lithography.
  • the master mold 20 is moved in the direction of arrow A, and the surface 1a of the surface layer 1 is pressurized with the master mold 20 as shown in FIG. This pressurization is performed at a temperature equal to or higher than the melting point of the side chain crystalline polymer. Thereby, the said side chain crystalline polymer will be in a fluid state, and the thermal imprint which transfers the fine pattern 21 of the master type
  • the pressurization temperature a temperature of the melting point + 10 ° C. to the melting point + 30 ° C. of the side chain crystalline polymer is preferable.
  • the said side chain crystalline polymer will be in an appropriate fluid state, the transcription
  • the pressurization temperature is too low, the flow state of the side chain crystalline polymer is lowered, and there is a possibility that the transfer accuracy by the master mold 20 is lowered.
  • the pressurization temperature is too high, the side-chain crystalline polymer is heated more than necessary, which is economically disadvantageous because it requires a lot of heat energy.
  • a heating means such as a heater is disposed on the back surface 20b opposite to the front surface 20a of the master mold 20, and the surface temperature of the fine pattern 21 is heated to a predetermined temperature by the heating means.
  • the atmospheric temperature can be adjusted to a temperature equal to or higher than the melting point of the side chain crystalline polymer.
  • a pressure of about 0.1 to 100 MPa and a pressurization time of about 5 to 300 seconds are preferable.
  • the temperature of the surface layer 1 is kept below the melting point of the side-chain crystalline polymer using a cooling means such as a fan while maintaining this state. Cooling. Thereby, the said side chain crystalline polymer will be in a crystalline state.
  • the master mold 20 is moved in the direction of arrow B, and the master mold 20 is peeled from the surface 1a of the surface layer 1 formed of the crystalline side chain crystalline polymer.
  • the side-chain crystalline polymer in the crystalline state has high releasability as described above. Therefore, the master mold 20 can be peeled off from the surface layer 1 without performing the mold release process on the fine pattern 21 of the master mold 20, and productivity can be improved.
  • the fine pattern 21 of the master mold 20 is transferred to the surface 1a of the surface layer 1, and the mold 10 having the fine pattern 2 opposite to the fine pattern 21 is obtained. Furthermore, if each process described above is repeated using the master mold 20, the mold 10 can be easily reproduced.
  • a microstructure is manufactured using the mold 10 by taking as an example a case where a UV curable resin composition is used as the curable resin composition.
  • a film 52 is formed on the surface of the substrate 51.
  • Examples of the material constituting the substrate 51 include silicon, (SiO 2 ) glass, and the like, polyethylene, polyethylene terephthalate, polypropylene, polyester, polyamide, polyimide, polycarbonate, ethylene vinyl acetate copolymer, ethylene ethyl acrylate copolymer, Examples include synthetic resins such as ethylene polypropylene copolymer and polyvinyl chloride.
  • the substrate 51 preferably has flexibility, and its thickness is, for example, about 50 to 300 ⁇ m, preferably about 100 to 150 ⁇ m.
  • the coating 52 is made of a UV curable resin composition.
  • the UV curable resin composition is cured by being irradiated with UV (ultraviolet rays), and various known ones can be adopted.
  • the coating film 52 may be formed by adding a UV curable resin composition to a predetermined solvent to obtain a coating solution, coating the coating solution on the surface of the substrate 51, and drying the coating solution.
  • the application can be performed by, for example, spin coating, slit coating, spray coating, roller coating, or the like.
  • the thickness of the uncured film 52 is, for example, about 0.01 to 1000 ⁇ m, preferably about 0.01 to 500 ⁇ m.
  • the mold 10 After forming the film 52 on the surface of the substrate 51, the mold 10 is disposed above the film 52 as shown in FIG. This arrangement is performed so that the fine pattern 2 of the mold 10 faces the coating 52. Next, the mold 10 is moved in the direction of arrow C, and the surface of the film 52 is pressurized with the mold 10 as shown in FIG. Thereby, the fine pattern 2 of the mold 10 is transferred to the film 52.
  • the pressure is about 0.1 to 100 MPa, and the pressurizing time is about 5 to 300 seconds.
  • Curing of the film 52 onto which the fine pattern 2 has been transferred is performed by irradiating the film 52 in a state where the surface of the film 52 is pressed with the mold 10, that is, in the state shown in FIG.
  • the UV irradiation direction is not particularly limited as long as the coating 52 can be irradiated with UV. That is, when the substrate 51 has UV transparency, the coating 52 may be irradiated with UV from the back side of the substrate 51. Further, when the support layer 5 of the mold 10 is made of a material having UV transparency, the entire mold 10 has UV transparency as described above. Can be irradiated with UV.
  • the mold 10 is moved in the direction of arrow D, and the mold 10 is peeled from the cured film 53.
  • the fine pattern 2 of the mold 10 is not subjected to release treatment, but the fine pattern 2 has high release properties for the above-described reason, and therefore the load applied to the cured film 53 at the time of peeling is small. Therefore, when the mold 10 is peeled from the cured film 53, the microstructure 50 composed of the cured film 53 to which the fine pattern 2 is transferred with excellent accuracy and the substrate 51 is obtained.
  • the thickness of the cured film 53 is, for example, about 0.01 to 1000 ⁇ m, preferably about 0.01 to 500 ⁇ m.
  • the remaining film 54 is removed by, for example, oxygen reactive ion etching, and the surface of the substrate 51 is exposed between the adjacent cured films 53 and 53, and then the cured film 53 is used as a mask. Etching can be performed, or aluminum or the like can be lifted off and used for wiring or the like.
  • the UV curable resin composition is described as an example of the curable resin composition.
  • a thermoplastic resin composition such as polymethyl methacrylate (PMMA) is used. Things can also be used.
  • the said embodiment demonstrated the case where hardening of the film
  • the weight average molecular weight is a value obtained by measuring the copolymer with GPC and converting the obtained measurement value into polystyrene. Moreover, the said melting
  • the imprint mold concerning this invention was produced.
  • Each member used is as follows.
  • Surface layer The side chain crystalline polymer obtained in the synthesis example was used.
  • Support layer 625 ⁇ m thick silicon was used.
  • the surface of the support layer that supports the surface layer was dry-etched as a surface treatment.
  • the dry etching process was performed with SF 6 gas.
  • Master mold A mold made of silicon having a nanometer-scale fine pattern formed on the surface by EB lithography was used.
  • the master pattern has a fine pattern in which a plurality of ridges are arranged in parallel.
  • the ridges have a width of 490 nm and a pitch interval of 180 nm.
  • the fine pattern of the master mold was not subjected to mold release treatment.
  • the pressurizing conditions are as follows. Pressure temperature: 70 ° C. (melting point of side chain crystalline polymer + 15 ° C.) Pressure: 5MPa Pressurization time: 60 seconds In addition, adjustment of the said pressurization temperature was performed by arrange
  • the mold was produced as follows. First, the surface layer was laminated
  • a master mold was placed above the surface layer (see FIG. 2 (b)), and the surface of the surface layer was pressurized with the master mold under the pressure condition (see FIG. 2 (c)). While maintaining the pressurized state by the master mold, the temperature of the surface layer was cooled to room temperature (23 ° C.), which is lower than the melting point of the side chain crystalline polymer, using a fan. And the master type
  • the micropattern of the obtained mold was observed with a scanning electron microscope (magnification: 12,000 times). The result is shown in FIG.
  • the reverse pattern of the master type fine pattern is accurately transferred onto the surface of the surface layer of the mold. More specifically, it can be seen that a plurality of ridges 30 having a width d1 of 180 nm are juxtaposed at a pitch interval d2 of 490 nm.
  • a fine pattern of a mold can be formed by thermally (nano) imprinting a master type fine pattern on a side chain crystalline polymer.
  • the master-type fine pattern does not need to be subjected to a mold release process and is excellent in productivity. If the obtained mold is used, it is expected that imprint lithography can be performed without performing mold release treatment on the fine pattern of the mold.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
PCT/JP2009/068383 2009-06-08 2009-10-27 インプリント用モールドおよびその製造方法 WO2010143321A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200980159699.3A CN102458800B (zh) 2009-06-08 2009-10-27 压印用模具及其制造方法
KR1020117028874A KR101355036B1 (ko) 2009-06-08 2009-10-27 임프린트용 몰드 및 그 제조 방법
JP2011518202A JP5329661B2 (ja) 2009-06-08 2009-10-27 インプリント用モールドおよびその製造方法

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JP2009-137553 2009-06-08
JP2009137553 2009-06-08

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WO2010143321A1 true WO2010143321A1 (ja) 2010-12-16

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KR (1) KR101355036B1 (ko)
CN (1) CN102458800B (ko)
TW (1) TWI461277B (ko)
WO (1) WO2010143321A1 (ko)

Cited By (5)

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JP2010265340A (ja) * 2009-05-12 2010-11-25 Nitta Ind Corp チャッキング用粘着シートおよびチャッキング用粘着テープ
JP2011001520A (ja) * 2009-06-22 2011-01-06 Nitta Corp モールド固定用粘着シートおよびモールド固定用粘着テープ
JP2012143915A (ja) * 2011-01-10 2012-08-02 Scivax Kk インプリント用型
JP2014220454A (ja) * 2013-05-10 2014-11-20 ニッタ株式会社 インプリント用レジスト材およびそれを用いた微細構造の製造方法
WO2022217954A1 (zh) * 2021-04-16 2022-10-20 深圳先进技术研究院 微纳结构制作方法及微纳结构制作装置

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JP7245973B2 (ja) * 2019-02-04 2023-03-27 パナソニックＩｐマネジメント株式会社 パターンの形成方法および装置
CN110316694B (zh) * 2019-07-09 2022-03-15 嘉兴学院 一种具有微纳米形态模具的加工方法

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JP2010265340A (ja) * 2009-05-12 2010-11-25 Nitta Ind Corp チャッキング用粘着シートおよびチャッキング用粘着テープ
JP2011001520A (ja) * 2009-06-22 2011-01-06 Nitta Corp モールド固定用粘着シートおよびモールド固定用粘着テープ
JP2012143915A (ja) * 2011-01-10 2012-08-02 Scivax Kk インプリント用型
JP2014220454A (ja) * 2013-05-10 2014-11-20 ニッタ株式会社 インプリント用レジスト材およびそれを用いた微細構造の製造方法
WO2022217954A1 (zh) * 2021-04-16 2022-10-20 深圳先进技术研究院 微纳结构制作方法及微纳结构制作装置

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