TWI690010B - 可變間隙硬停止件的設計 - Google Patents

可變間隙硬停止件的設計 Download PDF

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TWI690010B
TWI690010B TW105115513A TW105115513A TWI690010B TW I690010 B TWI690010 B TW I690010B TW 105115513 A TW105115513 A TW 105115513A TW 105115513 A TW105115513 A TW 105115513A TW I690010 B TWI690010 B TW I690010B
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麥克 史墨塞
尙恩 惠利
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荷蘭商Ａｓｍ智慧財產控股公司
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Abstract

本案揭示一種用於加工半導體基板之反應系統。該反應系統包括：一基座，其用於固持該基板；以及一底板，其作為用於該反應系統之殼體的一部分。位於該基座上之一銷釘可與位於該底板上之一底板特徵件相互作用以導致該基座與該底板之間的一可變間隙。該底板特徵件可採取一系列台階、一楔或一研磨出的特徵之形式。

Description

可變間隙硬停止件的設計
本揭示案總體係關於半導體加工工具。更特定而言，本揭示內容係關於晶圓操縱機構，該晶圓操縱機構包含反應區域之基座及底板。
半導體加工通常涉及諸如電晶體、二極體及積體電路之裝置之在稱為基板之半導體材料薄件上之製造。半導體加工在反應區域中發生，其中氣體在基板上經過，從而導致在基板上之受控的材料沉積。基板藉由基座提升至反應區域中。
圖1例示此種先前技術反應系統100。反應系統100包括反應區域105及基板裝載區域110。反應區域105由反應區域殼體115及反應物分配系統120界定。反應物分配系統120經例示為噴淋頭氣流系統，但可為交叉流設計系統。將反應區域105與基板裝載區域110分開的為底板125。基板腔室殼體130界定基板裝載區域110。
在圖1中，反應系統100處於基板裝載模式中，因為基板135裝載於基座140之頂部上。基座140藉由運動元件145向上及向下移動。運動元件145亦可允許基座140及基板135之旋轉。此外，基板裝載機構150經建構來將基板135裝卸於基座140上。
沿基座140安置於各種點處的為一組墊155。墊155安置於 基座140與底板125之間。該等墊防止基座140與底板125之間的直接實體接觸。
圖2例示處於基板加工模式中之反應系統100。基板135藉由基座140及運動元件145移至反應區域105中。當反應系統100處於基板加工模式中時，基座140中之墊155將接觸底板125。
圖3展示墊155與底板125之間的接觸之放大視圖。間隙160在基板135之加工期間形成於基座140與底板125之間。間隙160之目的係允許反應區域內側與基座外側之間的流體連通。墊155之高度165可處於0.001吋(約25mm)與約0.05吋(約1275mm)之間的範圍內。當墊155接觸底板125時，間隙160將為墊155之超過基座表面140A的高度。
隨時間，在反應區域105中之繼續加工可導致反應性材料在基座140之墊155上或周圍之沉積。此沉積堆積可導致間隙160之大小之減小。因此，堆積可改變反應區域105內側與外側之流體動力學。此可導致在所加工之基板135中出現污染及缺陷之問題。
此外，墊155與底板125之間的繼續接觸可導致墊155之腐蝕。如圖3A所示，繼續接觸之結果為墊155之高度165’之減小以及間隙160’之減小。此將影響反應區域105內側與外側之流體動力學。
存在一種加工沉積堆積之行動方案。可將反應區域打開以及可將墊替換。此外，可將反應區域自身替換。然而，籍由此等步驟，可拆卸反應區域。該拆卸將發生於特定數量的循環或基板經加工之後。經由使用用以監視材料之沉積堆積如何發生之歷史資料來判定此數量。該拆卸通常不可行，因為其導致加工停工時間。
因此，理想的為，具有用於反應區域之佈置來解決歸咎於堆積而縮小間隙之問題而不用將反應區域拆卸。
根據本發明之至少一個實施方式，揭示反應系統。反應系統包括：基座；銷釘，其位於基座上；底板，其用於與基座相互作用；運動元件，其用於移動基座；以及底板特徵件，其位於底板上。基座與底板之間的相互作用導致基座與底板之間的可變間隙。可變間隙可基於銷釘之在底板特徵件上接觸之位置而調整。底板特徵件可採用以下形式中之至少一者：一系列台階、楔或研磨出的特徵。
根據本發明之至少一個實施方式，揭示底板總成。底板總成包括底板及位於底板上之底板特徵件。底板及底板特徵件經建構來與位於固持基板之基座上的銷釘相互作用，以使得銷釘與底板特徵件或底板之間的接觸位置將導致底板與基座之間的可變間隙。底板特徵件可採用以下形式中之至少一者：一系列台階、楔或研磨出的特徵。
出於概述本發明及在先前技術基礎上達成之優點之目的，已於此在上文描述本發明之某些目標及優點。當然，應理解，不必所有此類目標或優點可根據本發明之任何特定實施方式達成。因此，例如，熟習此項技術者將意識到，可以達成或優化如本文教示的一個優點或一組優點之方式實現或實行本發明，而不必達成如本文可教示或建議的其他目標或優點。
此等實施方式之全部旨在落入在此揭示之本發明的範疇內。參考隨附圖式，根據某些實施方式之以下詳細描述，此等及其他實施 方式對於熟習此項技術者而言將變得顯而易見，本發明不限於所揭示之任何一或多個特定實施方式。
A‧‧‧方向
B‧‧‧方向
C‧‧‧方向
X‧‧‧軸
100‧‧‧反應系統
105‧‧‧反應區域
110‧‧‧基板裝載區域
115‧‧‧反應區域殼體
120‧‧‧反應物分配系統
125‧‧‧底板
130‧‧‧基板腔室殼體
135‧‧‧基板
140‧‧‧基座
140A‧‧‧基座表面
145‧‧‧運動元件
150‧‧‧基板裝載機構
155‧‧‧墊
160‧‧‧間隙
160’‧‧‧間隙
165‧‧‧高度
165’‧‧‧高度
200‧‧‧反應系統
205‧‧‧反應區域
210‧‧‧基板裝載區域
215‧‧‧反應區域殼體
220‧‧‧反應物分配系統
225‧‧‧底板
225A‧‧‧下部表面
230‧‧‧基板裝載殼體
235‧‧‧基座
235A‧‧‧下部表面
240‧‧‧基板
245‧‧‧運動元件
250‧‧‧基板裝載機構
255‧‧‧底板特徵件
255A‧‧‧第一台階
255B‧‧‧第二台階
255C‧‧‧第三台階
260‧‧‧銷釘
270A‧‧‧間隙
270B‧‧‧間隙
270C‧‧‧間隙
270D‧‧‧間隙
300‧‧‧反應系統
305‧‧‧反應區域
310‧‧‧基板裝載區域
315‧‧‧反應區域殼體
325‧‧‧底板
325A‧‧‧下部表面
330‧‧‧基板裝載殼體
335‧‧‧基座
335A‧‧‧下部表面
340‧‧‧基板
345‧‧‧運動元件
350‧‧‧基板裝載機構
355‧‧‧底板特徵件
355A‧‧‧前邊緣
355B‧‧‧後邊緣
360‧‧‧銷釘
370A‧‧‧間隙
370B‧‧‧間隙
405‧‧‧反應區域
410‧‧‧基板裝載區域
415‧‧‧反應區域殼體
425‧‧‧底板
425A‧‧‧下部表面
430‧‧‧基板區域殼體
435‧‧‧基座
435A‧‧‧下部表面
440‧‧‧基板
445‧‧‧運動元件
455‧‧‧底板特徵件
455A‧‧‧垂直表面
455B‧‧‧頂表面
455C‧‧‧傾斜表面
460‧‧‧銷釘
470A‧‧‧間隙
470B‧‧‧間隙
參考某些實施方式之圖式，本文揭示之本發明的此等及其他特徵、觀點及優點描述如下，其中該等圖式旨在例示而非限制本發明。
圖1為處於基板裝載模式中之先前技術反應系統之截面視圖。
圖2為處於基板加工模式中之先前技術反應系統之截面視圖。
圖3為如圖2所示之包括墊、基座及底板之先前技術反應系統的放大視圖。
圖3A為包括墊、基座及底板之先前技術反應系統的放大視圖。
圖4為根據本發明之一個實施方式之處於基板裝載模式中之反應系統的截面視圖。
圖5為根據本發明之一個實施方式之基座之頂部立面圖。
圖6為根據本發明之一個實施方式之底板之立面圖。
圖7為根據本發明之一個實施方式之基座及底板的立面圖。
圖8為根據本發明之一個實施方式之處於基板加工模式中之反應系統之截面視圖。
圖9為根據本發明之一個實施方式之如圖8所示之包括墊、基座及底板之反應系統的放大視圖。
圖10A-10D為根據本發明之一個實施方式之如圖8所示之包括墊、基座及底板之反應系統的放大截面視圖。
圖11為根據本發明之一個實施方式之處於基板裝載模式中之反應系統的截面視圖。
圖12為根據本發明之一個實施方式之底板之立面圖。
圖13為根據本發明之一個實施方式之如圖11所示之包括墊、基座及底板之反應系統的放大視圖。
圖14A-14B為根據本發明之一個實施方式之如圖11所示之包括墊、基座及底板之反應系統的側面透視圖。
圖15為根據本發明之一個實施方式之反應系統的放大視圖。
圖16A-16B為如圖15所示之反應系統的側面透視圖。
應瞭解，圖式中之元件為簡單及清晰例示並且未必按比例繪製。例如，圖式中之元件中之一些者的尺寸可相對於其他元件誇大以幫助加強對本揭示案之所例示之實施方式的理解。
雖然某些實施方式及實例在下文揭示，但熟習此項技術者將理解，本發明延伸超出具體揭示之實施方式及/或本發明之使用及其明顯的修改及等效物。因此，意圖在於，所揭示之本發明之範疇不應受限於如下所述之特定揭示的實施方式。
圖4例示根據本發明之至少一個實施方式之反應系統200。反應系統200包括反應區域205及基板裝載區域210。反應區域205藉由反 應區域殼體215、反應物分配系統220及底板225部分地界定。基板裝載區域210藉由基板裝載殼體230部分地界定。反應物分配系統220負責用於使氣體反應物在基板上經過以允許反應物材料之沉積。如圖所例示，反應物分配系統220為噴淋頭系統。然而，一般技藝人士將理解，交叉流系統可被反應物分配系統220的噴淋頭系統代替。
反應系統200亦包括基座235，基座235用於固持基板240。基座235具有下部表面235A。運動元件245將基座235與基板240兩者移至反應區域205中。此外，運動元件245經建構來旋轉基座235及基板240。此外，基板裝載機構250安置於基座內以便自基座235裝卸基板240。
位於底板225之下部表面225A上的為一組底板特徵件255。根據本發明之此實施方式，底板特徵件255經例示為具有一系列台階。該等台階之高度可處於0.001與0.05吋之間的範圍內。更佳地，該等台階之高度可處於0.004與0.012吋之間的範圍內。底板特徵件255將與嵌入基座235內之銷釘260接觸。
圖5例示根據本發明之至少一個實施方式之基座235及基板240。基座235經建構來固持基板240。此外，銷釘260安裝至基座235之下部表面235A中。雖然例示存在三個銷釘安裝在基座235中，但一般技藝人士將意識到，可使用任何數量的銷釘。在標題為「GAP MAINTENANCE FOR OPENING TO PROCESS CHAMBER」之美國專利第8,216,380號(White等人)中揭示一種示範性銷釘，該專利之內容於此以引用方式併入本文，該內容引用程度使得此種內容不與本揭示案衝突。銷釘260可具有之高度介於0.001吋(約25mm)與約0.05吋(約1275mm)之間。銷釘260亦可包含 Celazole®(聚苯并咪唑)墊，儘管其他材料亦為可能的。
圖6例示根據本發明之至少一個實施方式之與位於基座235上的銷釘260接觸之底板225之一側。安置於底板225之下部表面225A上的為複數個底板特徵件255。底板特徵件255經例示為具有第一台階255A、第二台階225B及第三台階255C。一般技藝人士將意識到，底板特徵件255之數量及定向可取決於銷釘260之數量而經修改及佈置。
圖7例示根據本發明之至少一個實施方式之當反應系統200處於基板加工模式時在底板225與基座235之間的覆蓋(示為虛線)。該覆蓋係如此以至位於基座235上之銷釘260與底板特徵件255之第一台階255A、第二台階255B或第三台階255C中之一者或底板225之下部表面225A接觸。可以想像，銷釘260與底板特徵件255之間的接觸出現於底板特徵件255之同一台階級處。此將允許基座235與底板225之間的間隙之一致的大小。基座235經建構來圍繞軸X沿方向A旋轉以使得銷釘260可在底板特徵件255上之不同位置處接觸底板225。藉由調整銷釘之位置來調整基座235與底板225之間的間隙之大小的製程稱為分度(indexing)。
圖8展示根據本發明之至少一個實施方式之處於基板加工模式中之反應系統200。在此模式中，運動元件245已將基座235及基板240提升至反應區域205中。因此，基座235上之銷釘260與底板225接觸。
圖9更詳細展示銷釘260之在底板225上之接觸。底板特徵件255展示為自底板225之底表面延伸。底板特徵件255具有接觸銷釘260之複數個表面。此等表面在圖10A-10D中詳細展示。
在圖10A中，銷釘260在底板225上接觸下部表面225A。 銷釘260與底板特徵件表面255A之間的接觸形成間隙270A。在間隙270A之此高度下，反應系統200可加工預定數量的基板240。例如，反應系統200可在銷釘260與下部表面225A接觸的情況下加工五千個基板。在此期間，來自沉積反應之材料可進入並堆積在間隙270A內，從而減小間隙270A之大小且潛在地導致基板240中之污染及缺陷。因此，反應系統200可針對縮小的間隙進行調整。
在分度製程中，運動元件245能夠在方向C上降低基座235並在方向B上將基座235向右移位，如圖10B所示。運動元件245可隨後將銷釘260放置為與底板特徵件255之第一台階255A接觸。此接觸之結果為間隙270B之形成。間隙270B將比間隙270A之大小更大。
在間隙270B之此高度下，反應系統200可加工預定數量的基板240。例如，反應系統200可在銷釘260與第一台階255A接觸的情況下加工五千個基板。在此期間，來自沉積反應之材料再次可進入間隙270B，從而減小間隙270B之大小且潛在地導致基板240中之污染及缺陷。
如圖10C所示，分度製程繼續，且運動元件245能夠在方向C上降低基座235，在方向B上將基座235向右移位，且接著將銷釘260放置為與第二台階255B接觸。此接觸之結果為間隙270C之形成。間隙270C將比間隙270B或間隙270A之大小更大。
在間隙270C之此高度下，反應系統200可加工預定數量的基板240。例如，反應系統200可在銷釘260與第二台階面255B接觸的情況下加工五千個基板。在此期間，來自沉積反應之材料再次可進入間隙270C，從而減小間隙270C之大小且潛在地導致基板240中之污染及缺陷。
如圖10D所示，在分度製程之另一步驟中，運動元件245能夠在方向C上降低基座235，在方向B上將基座235向右移位，且接著將銷釘260放置為與第三台階255C接觸。此接觸之結果為間隙270D之形成。間隙270D將比間隙270C、間隙270B或間隙270A之大小更大。
在間隙270D之此高度下，反應系統200可加工預定數量的基板240。例如，反應系統200可在銷釘260與底板特徵件表面255D接觸的情況下加工五千個基板。在此期間，來自沉積反應之材料再次可進入間隙270D，從而減小間隙270D之大小且潛在地導致基板240中之污染及缺陷。
圖11例示根據本發明之至少一個實施方式之反應系統300。反應系統300包括反應區域305及基板裝載區域310。反應區域305藉由反應區域殼體315、反應物分配系統320及底板325部分地界定。基板裝載區域310藉由基板裝載殼體330部分地界定。反應物分配系統320負責用於使氣體反應物在基板上經過以允許反應物材料之沉積。如圖所例示，反應物分配系統320為噴淋頭系統。然而，一般技藝人士將理解，交叉流系統可被反應物分配系統320的噴淋頭系統代替。
反應系統300亦包括基座335，基座335用於固持基板340。基座335具有下部表面335A。運動元件345將基座335與基板340兩者移至反應區域305中。此外，運動元件345經建構來旋轉基座335及基板340。此外，基板裝載機構350安置於基座內以便自基座335裝卸基板340。
位於底板325之下部表面325A上的為一組底板特徵件355。底板特徵件355經例示為一系列楔。該等楔之高度可處於0.001與0.05吋之間的範圍內。此外，可較佳為，楔之高度介於0.004與0.012吋之間。底板 特徵件355將與嵌入基座335之下部表面335A內之銷釘360接觸。
圖12例示根據本發明之至少一個實施方式之與位於基座335上的銷釘360接觸之底板325之一側。安置於底板325之下部表面325A上的為複數個底板特徵件355。底板特徵件355經佈置以允許底板325與基座335之間的一致的間隙。一般技藝人士將意識到，底板特徵件355之數量可取決於銷釘360之數量而經修改及佈置。
圖13展示根據本發明之至少一個實施方式之處於基板加工模式中之反應系統300。在此模式中，運動元件345已提升基座335，以使得基座335上之銷釘360與底板325之下部表面325A接觸。底板特徵件355具有前邊緣355A及後邊緣355B。
在圖14A中例示根據本發明之至少一個實施方式之分度製程。銷釘360在底板325上接觸底板表面325A。銷釘360與底板表面325A之間的接觸形成間隙270A。在間隙370A之此高度下，反應系統300可加工預定數量的基板340。例如，反應系統300可在銷釘360與底板表面325A接觸的情況下加工五千個基板。在此期間，來自沉積反應之材料可進入並堆積在間隙370A內，從而減少間隙370A之大小且潛在地導致基板340中之污染及缺陷。因此，反應系統300可能必須針對縮小的間隙進行調整。
運動元件345能夠在方向C上降低基座335並在方向B上將基座335向右移位。運動元件345可隨後將銷釘360放置為與底板特徵件355之前邊緣355A接觸，如圖14B所示。此接觸之結果為間隙370B之形成。間隙370B將比間隙370A之大小更大。
在間隙370B之此高度下，反應系統300可加工預定數量的 基板340。例如，反應系統300可在銷釘360與前邊緣355A接觸的情況下加工五千個基板。在此期間，來自沉積反應之材料再次可進入間隙370B，從而減小間隙370B之大小且潛在地導致基板340中之污染及缺陷。本發明之至少一個實施方式能夠允許銷釘360降低並移位以使得銷釘360將與底板特徵件355之後邊緣355B接觸。此佈置將潛在地避免對反應系統之不必要的停機之需要。
圖15例示根據本發明之至少一個實施方式之反應系統。反應系統包括反應區域405及基板裝載區域410。反應區域405由反應區域殼體415及底板425界定。基板裝載區域由基板區域殼體430界定。
基座435固持基板440並將基板440升舉至反應區域405中。基座435藉由運動元件445移動。銷釘460安裝於基座435之下部表面435A內。銷釘460與底板425相互作用，底板425具有下部表面425A。一系列底板特徵件455在下部表面425A內自底板425研磨或雕刻出。底板特徵件455具有頂表面455B及傾斜表面455C。
圖16A例示根據本發明之至少一個實施方式之根據分度製程在銷釘460與底板特徵件455之間的相互作用。銷釘460碰觸底板特徵件455之頂表面455B，頂表面455B亦具有垂直表面455A。垂直表面455A之高度可處於0.001與0.05吋之間的範圍內。此外，可較佳為，垂直表面455A之高度介於0.004與0.012吋之間。
當銷釘460碰觸頂表面455B時，底板425之下部表面425A碰觸或幾乎碰觸到基座435之下部表面435A。此導致底板425與基座435之間存在很小或沒有間隙470A。由此極小間隙470A產生之益處為判定底 板425與基座435之間的對準之方式。此外，小間隙470A將亦充當判定是否底板425或基座435或兩者為平坦的而不遭受任何翹曲效應。
圖16A中展示之佈置將導致自反應區域405至基板裝載區域410中的非常低的氣體壓力洩漏率。因此，若在銷釘460碰觸頂表面455B時發生高洩漏率，則此將充當一警告，項反應系統之操作機構警告在系統中之一部分中存在潛在系統誤差。
在籍由處於圖16A所示之佈置中的反應系統加工若干基板之後，基座435可移動以使得銷釘460碰觸底板特徵件455中之另一部分。此移動在圖16B中展示，正如基座435經由運動元件445之輔助在方向B上移動。該移動致使銷釘460射至底板特徵件455之傾斜表面455C上。因此，底板425與基座435之間的間隙470B之大小增大。歸咎於自反應區域405至基板裝載區域410中之氣體壓力的洩漏率應歸咎於增大的間隙大小而為更大的。在沿方向B之額外移動潛在地導致射至底板425之下部表面425A上的銷釘460的情況下，可在此位置中加工其他基板。
所示及所述之特定實行方案說明本發明及其最佳方式且不旨在以任何其他方式限制觀點及實行方案之範疇。實際上，為了簡潔起見，可能不詳細描述習知製造、連接、製備及系統之其他功能性觀點。此外，在各種圖式中展示之連接線旨在表示示範性功能關係及/或各種元件之間的實體耦接。許多替代或額外的功能關係或實體連接可存在於實際系統中，及/或在一些實施方式中可能不存在。
應理解，本文所述之組態及/或方法在性質上為示範性的，且此等特定實施方式或實例不應在限制意義上考慮，因為許多變型為可能 的。本文所述之專用程序或方法可表示任何數量的加工策略中之一或多者。因此，所例示之各種行為可以所例示之序列、以其他序列進行，或在一些情況下得以忽略。
本揭示案之標的包括本文揭示之各種製程、系統及組態，及其他特徵、功能、行為及/或屬性的所有新穎及非顯而易見的組合及子組合以及其任何及所有等效物。
200:反應系統
205:反應區域
210:基板裝載區域
215:反應區域殼體
220:反應物分配系統
225:底板
225A:下部表面
230:基板裝載殼體
235:基座
235A:下部表面
240:基板
245:運動元件
250:基板裝載機構
255:底板特徵件
260:銷釘

Claims (18)

  1. 一種反應系統，其包含：一基座，其經建構以固持一待加工之基板；一銷釘，其係嵌入該基座內；一反應區域之一底板，該底板在該基座之周邊處與該基座相互作用；一運動元件，其經建構以旋轉該基座及該基板；以及一底板特徵件，其係位於該底板上；其中當該銷釘接觸該底板特徵件時，一間隙形成於該基座與該底板之間；其中該間隙之一大小可根據該銷釘之在該底板特徵件上之接觸之一位置而調整；且其中該底板特徵件包含一系列台階。
  2. 如申請專利範圍第1項之反應系統，其中該等系列台階之一高度係介於0.001與0.05吋之間的範圍內。
  3. 如申請專利範圍第2項之反應系統，其中該等系列台階之一高度係介於0.004與0.012吋之間的範圍內。
  4. 一種反應系統，其包含：一基座，其經建構以固持一待加工之基板；一銷釘，其係嵌入該基座內；一反應區域之一底板，該底板在該基座之周邊處與該基座相互作用；一運動元件，其經建構以旋轉該基座及該基板；以及一底板特徵件，其係位於該底板上； 其中當該銷釘接觸該底板特徵件時，一間隙形成於該基座與該底板之間；其中該間隙之一大小可根據該銷釘之在該底板特徵件上之接觸之一位置而調整，且其中該底板特徵件包含一楔。
  5. 如申請專利範圍第4項之反應系統，其中該楔之一高度係介於0.001與0.05吋之間的範圍內。
  6. 如申請專利範圍第5項之反應系統，其中該楔之一高度係介於0.004與0.012吋之間的範圍內。
  7. 一種反應系統，其包含：一基座，其經建構以固持一待加工之基板；一銷釘，其係嵌入該基座內；一反應區域之一底板，該底板在該基座之周邊處與該基座相互作用；一運動元件，其經建構以旋轉該基座及該基板；以及一底板特徵件，其係位於該底板上；其中當該銷釘接觸該底板特徵件時，一間隙形成於該基座與該底板之間；其中該間隙之一大小可根據該銷釘之在該底板特徵件上之接觸之一位置而調整，且其中該底板特徵件係藉由來自該底板之一部分研磨出而產生，從而導致該底板特徵件包含一垂直表面、一水平表面及一傾斜表面。
  8. 如申請專利範圍第7項之反應系統，其中該底板特徵件之該垂直表面之一高度係介於0.001與0.05吋之間的範圍內。
  9. 如申請專利範圍第8項之反應系統，其中該底板特徵件之該垂直表 面之一高度係介於0.004與0.012吋之間的範圍內。
  10. 如申請專利範圍第1~8項中任一項之反應系統，其中該銷釘與該底板特徵件之該水平表面之間的一接觸導致該底板與該基座之間的該間隙之最小化。
  11. 一種底板總成，其包含：一底板，其經建構以界定其中一反應發生之一區域；以及一底板特徵件，其係安置於該底板上；其中該底板特徵件經建構以與位於固持一基板之一基座上的一銷釘相互作用；以及其中該銷釘之在該底板特徵件上之一接觸在介於該底板與該基座之間產生一間隙，該間隙之大小取決於該接觸相對於該底板特徵件之一位置；且其中該底板特徵件包含一台階。
  12. 如申請專利範圍第11項之底板總成，其中該台階之一高度係介於0.004與0.012吋之間的範圍內。
  13. 一種底板總成，其包含：一底板，其經建構以界定其中一反應發生之一區域；以及一底板特徵件，其係安置於該底板上；其中該底板特徵件經建構以與位於固持一基板之一基座上的一銷釘相互作用；以及其中該銷釘之在該底板特徵件上之一接觸在介於該底板與該基座之間產生一間隙，該間隙之大小取決於該接觸相對於該底板特徵件之一位置，且其中該底板特徵件包含一楔。
  14. 如申請專利範圍第13項之底板總成，其中該楔之一高度係介於0.004與0.012吋之間的範圍內。
  15. 一種底板總成，其包含：一底板，其經建構以界定其中一反應發生之一區域；以及一底板特徵件，其係安置於該底板上；其中該底板特徵件經建構以與位於固持一基板之一基座上的一銷釘相互作用；以及其中該銷釘之在該底板特徵件上之一接觸在介於該底板與該基座之間產生一間隙，該間隙之大小取決於該接觸相對於該底板特徵件之一位置，且其中該底板特徵件係藉由來自該底板之一部分研磨出而產生，從而導致該底板特徵件包含一垂直表面、一水平表面及一傾斜表面。
  16. 如申請專利範圍第15項之底板總成，其中該底板特徵件之該垂直表面之一高度係介於0.004與0.012吋之間的範圍內。
  17. 如申請專利範圍第15項之底板總成，其中該銷釘與該底板特徵件之該水平表面之間的一接觸導致介於該底板與該基座之間的該間隙之最小化。
  18. 如申請專利範圍第17項之底板總成，其中介於該底板與該基座之間的該間隙之該最小化提供該底板總成或該基座之一翹曲狀態的一指示。
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