MY172115A - Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics - Google Patents

Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

Info

Publication number
MY172115A
MY172115A MYPI2012005126A MYPI2012005126A MY172115A MY 172115 A MY172115 A MY 172115A MY PI2012005126 A MYPI2012005126 A MY PI2012005126A MY PI2012005126 A MYPI2012005126 A MY PI2012005126A MY 172115 A MY172115 A MY 172115A
Authority
MY
Malaysia
Prior art keywords
stretchable
nanomembranes
semiconductors
electronic circuits
stretchable electronics
Prior art date
Application number
MYPI2012005126A
Other languages
English (en)
Inventor
John A Rogers
Matthew Meitl
Etienne Menard
Heung Cho Ko
Mark Stoykovich
Yugang Sun
Andrew Carlson
Won Mook Choi
Hanqing Jiang
Yonggang Huang
Ralph G Nuzzo
Keon Jae Lee
Seong Jun Kang
Zhengtao Zhu
Jong-Hyun Ahn
Hoon-Sik Kim
Dahl-Young Khang-
Original Assignee
Univ Illinois
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Illinois filed Critical Univ Illinois
Publication of MY172115A publication Critical patent/MY172115A/en

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    • B81—MICROSTRUCTURAL TECHNOLOGY
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    • H01L2924/30105—Capacitance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
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    • H05K1/0313—Organic insulating material
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    • H05K2201/01—Dielectrics
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    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
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    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/201—Integrated devices having a three-dimensional layout, e.g. 3D ICs
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Families Citing this family (172)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7557433B2 (en) 2004-10-25 2009-07-07 Mccain Joseph H Microelectronic device with integrated energy source
US7799699B2 (en) 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
JP2008502151A (ja) 2004-06-04 2008-01-24 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ 印刷可能半導体素子を製造して組み立てるための方法及びデバイス
US7521292B2 (en) 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US8217381B2 (en) 2004-06-04 2012-07-10 The Board Of Trustees Of The University Of Illinois Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
CN101517700B (zh) 2006-09-20 2014-04-16 伊利诺伊大学评议会 用于制造可转移半导体结构、器件和器件构件的松脱策略
CN105826345B (zh) 2007-01-17 2018-07-31 伊利诺伊大学评议会 通过基于印刷的组装制造的光学***
JP5743553B2 (ja) 2008-03-05 2015-07-01 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ 伸張可能及び折畳み可能な電子デバイス
US8470701B2 (en) 2008-04-03 2013-06-25 Advanced Diamond Technologies, Inc. Printable, flexible and stretchable diamond for thermal management
US7927976B2 (en) 2008-07-23 2011-04-19 Semprius, Inc. Reinforced composite stamp for dry transfer printing of semiconductor elements
WO2010036807A1 (en) 2008-09-24 2010-04-01 The Board Of Trustees Of The University Of Illinois Arrays of ultrathin silicon solar microcells
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US8097926B2 (en) 2008-10-07 2012-01-17 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US8372726B2 (en) 2008-10-07 2013-02-12 Mc10, Inc. Methods and applications of non-planar imaging arrays
EP2349440B1 (en) 2008-10-07 2019-08-21 Mc10, Inc. Catheter balloon having stretchable integrated circuitry and sensor array
US9119533B2 (en) 2008-10-07 2015-09-01 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
US9123614B2 (en) 2008-10-07 2015-09-01 Mc10, Inc. Methods and applications of non-planar imaging arrays
US9545285B2 (en) 2011-10-05 2017-01-17 Mc10, Inc. Cardiac catheter employing conformal electronics for mapping
KR101041139B1 (ko) * 2008-11-04 2011-06-13 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법 및 그를 포함하는 유기전계발광표시장치
WO2010056857A2 (en) * 2008-11-12 2010-05-20 Mc10, Inc. Extremely stretchable electronics
KR101736722B1 (ko) 2008-11-19 2017-05-17 셈프리어스 아이엔씨. 전단-보조 탄성 스탬프 전사에 의한 프린팅 반도체 소자
EP2386117A4 (en) * 2009-01-12 2017-12-27 Mc10, Inc. Methods and applications of non-planar imaging arrays
WO2010086034A1 (en) 2009-01-30 2010-08-05 Interuniversitair Microelektronica Centrum Vzw Stretchable electronic device
EP2430652B1 (en) 2009-05-12 2019-11-20 The Board of Trustees of the University of Illionis Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays
FR2947063B1 (fr) 2009-06-19 2011-07-01 Commissariat Energie Atomique Retroprojecteur
US8261660B2 (en) 2009-07-22 2012-09-11 Semprius, Inc. Vacuum coupled tool apparatus for dry transfer printing semiconductor elements
KR101077789B1 (ko) 2009-08-07 2011-10-28 한국과학기술원 Ｌｅｄ 디스플레이 제조 방법 및 이에 의하여 제조된 ｌｅｄ 디스플레이
KR101113692B1 (ko) 2009-09-17 2012-02-27 한국과학기술원 태양전지 제조방법 및 이에 의하여 제조된 태양전지
US9723122B2 (en) 2009-10-01 2017-08-01 Mc10, Inc. Protective cases with integrated electronics
US10918298B2 (en) 2009-12-16 2021-02-16 The Board Of Trustees Of The University Of Illinois High-speed, high-resolution electrophysiology in-vivo using conformal electronics
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
KR101405463B1 (ko) 2010-01-15 2014-06-27 그래핀스퀘어 주식회사 기체 및 수분 차단용 그래핀 보호막, 이의 형성 방법 및 그의 용도
US8450779B2 (en) * 2010-03-08 2013-05-28 International Business Machines Corporation Graphene based three-dimensional integrated circuit device
WO2011112931A1 (en) 2010-03-12 2011-09-15 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
EP2974673B1 (en) 2010-03-17 2017-03-22 The Board of Trustees of the University of Illionis Implantable biomedical devices on bioresorbable substrates
JP2013533754A (ja) * 2010-04-12 2013-08-29 タフツ・ユニバーシティ 絹電子部品
CA2813000C (en) * 2010-09-27 2018-09-04 Techtonic Pty Ltd Undulatory structures
CN102001622B (zh) * 2010-11-08 2013-03-20 中国科学技术大学 空气桥式纳米器件的制备方法
US9442285B2 (en) 2011-01-14 2016-09-13 The Board Of Trustees Of The University Of Illinois Optical component array having adjustable curvature
EP2681538B1 (en) 2011-03-11 2019-03-06 Mc10, Inc. Integrated devices to facilitate quantitative assays and diagnostics
TWI455341B (zh) * 2011-03-21 2014-10-01 Motech Ind Inc Method for manufacturing solar cells
US10189587B2 (en) * 2011-04-18 2019-01-29 Adidas Ag Process and apparatus for continuously encapsulating elongated components and encapsulated elongated components obtained
WO2012158709A1 (en) 2011-05-16 2012-11-22 The Board Of Trustees Of The University Of Illinois Thermally managed led arrays assembled by printing
US9159635B2 (en) 2011-05-27 2015-10-13 Mc10, Inc. Flexible electronic structure
EP2713863B1 (en) 2011-06-03 2020-01-15 The Board of Trustees of the University of Illionis Conformable actively multiplexed high-density surface electrode array for brain interfacing
CN102244015B (zh) * 2011-06-17 2012-12-19 华中科技大学 一种在预拉伸的弹性基板上进行柔性电子图案化的方法
WO2013022853A1 (en) 2011-08-05 2013-02-14 Mc10, Inc. Catheter balloon methods and apparatus employing sensing elements
US9757050B2 (en) 2011-08-05 2017-09-12 Mc10, Inc. Catheter balloon employing force sensing elements
EP3470830A1 (en) 2011-09-01 2019-04-17 MC10 Inc. Electronics for detection of a condition of tissue
US9691873B2 (en) 2011-12-01 2017-06-27 The Board Of Trustees Of The University Of Illinois Transient devices designed to undergo programmable transformations
FR2985371A1 (fr) 2011-12-29 2013-07-05 Commissariat Energie Atomique Procede de fabrication d'une structure multicouche sur un support
US8492208B1 (en) 2012-01-05 2013-07-23 International Business Machines Corporation Compressive (PFET) and tensile (NFET) channel strain in nanowire FETs fabricated with a replacement gate process
CN102610534A (zh) * 2012-01-13 2012-07-25 华中科技大学 一种可伸缩rfid电子标签及其制造方法
CN104205365B (zh) 2012-03-19 2020-06-16 亮锐控股有限公司 磷光体施加前后发光器件的单个化
CN102610672A (zh) * 2012-03-23 2012-07-25 合肥工业大学 一种异质结型光电探测器及其制备方法
US9554484B2 (en) 2012-03-30 2017-01-24 The Board Of Trustees Of The University Of Illinois Appendage mountable electronic devices conformable to surfaces
US9247637B2 (en) 2012-06-11 2016-01-26 Mc10, Inc. Strain relief structures for stretchable interconnects
US9226402B2 (en) 2012-06-11 2015-12-29 Mc10, Inc. Strain isolation structures for stretchable electronics
KR20150031324A (ko) 2012-07-05 2015-03-23 엠씨10, 인크 유동 감지를 포함하는 카테터 장치
US9295842B2 (en) 2012-07-05 2016-03-29 Mc10, Inc. Catheter or guidewire device including flow sensing and use thereof
CN102903841B (zh) * 2012-09-18 2015-09-09 中国科学院宁波材料技术与工程研究所 一种温度控制的磁电子器件、其制备方法及应用
JP2016500869A (ja) 2012-10-09 2016-01-14 エムシー１０ インコーポレイテッドＭｃ１０，Ｉｎｃ． 衣類と一体化されたコンフォーマル電子回路
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
CN102983791A (zh) * 2012-10-26 2013-03-20 苏州大学 温差交流发电装置及其发电方法
KR102495290B1 (ko) 2012-12-28 2023-02-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102051519B1 (ko) 2013-02-25 2019-12-03 삼성전자주식회사 파이버 상에 형성된 박막 트랜지스터 및 그 제조 방법
AU2014250839B2 (en) 2013-04-12 2018-05-10 The Board Of Trustees Of The University Of Illinois Inorganic and organic transient electronic devices
US9706647B2 (en) * 2013-05-14 2017-07-11 Mc10, Inc. Conformal electronics including nested serpentine interconnects
US9372123B2 (en) 2013-08-05 2016-06-21 Mc10, Inc. Flexible temperature sensor including conformable electronics
CN105705093A (zh) 2013-10-07 2016-06-22 Mc10股份有限公司 用于感测和分析的适形传感器***
CN103560157B (zh) * 2013-11-19 2016-02-24 中国科学院上海微***与信息技术研究所 应变结构及其制作方法
KR102365120B1 (ko) 2013-11-22 2022-02-18 메디데이타 솔루션즈, 인코포레이티드 심장 활동 감지 및 분석용 등각 센서 시스템
JP6549150B2 (ja) 2014-01-06 2019-07-24 エムシー１０ インコーポレイテッドＭｃ１０，Ｉｎｃ． コンフォーマル電子デバイスの封入方法
CN106063392B (zh) 2014-03-04 2020-06-02 Mc10股份有限公司 电子器件的多部分柔性包封壳体
CN106062544B (zh) 2014-03-12 2020-07-07 Mc10股份有限公司 对测定变化的量化
CN103869607A (zh) * 2014-03-18 2014-06-18 无锡中微掩模电子有限公司 二元掩模铬金属膜去除方法
WO2015168273A1 (en) * 2014-05-02 2015-11-05 Synopsys, Inc. 3d tcad simulation
US10207916B2 (en) 2014-05-28 2019-02-19 3M Innovative Properties Company MEMS devices on flexible substrate
CN105431292B (zh) * 2014-07-11 2018-06-08 英特尔公司 可弯曲并且可拉伸的电子器件和方法
MY182253A (en) * 2014-07-20 2021-01-18 X Celeprint Ltd Apparatus and methods for micro-transfer-printing
KR102161644B1 (ko) 2014-08-20 2020-10-06 삼성디스플레이 주식회사 스트레쳐블 표시 패널 및 이를 포함하는 표시 장치
CN104153128B (zh) * 2014-08-26 2017-03-08 青岛大学 一种基于有序排列扭曲结构柔性可拉伸器件的制备方法
US9899330B2 (en) 2014-10-03 2018-02-20 Mc10, Inc. Flexible electronic circuits with embedded integrated circuit die
US10297572B2 (en) 2014-10-06 2019-05-21 Mc10, Inc. Discrete flexible interconnects for modules of integrated circuits
USD781270S1 (en) 2014-10-15 2017-03-14 Mc10, Inc. Electronic device having antenna
US9398705B2 (en) * 2014-12-02 2016-07-19 Flextronics Ap, Llc. Stretchable printed electronic sheets to electrically connect uneven two dimensional and three dimensional surfaces
US9991326B2 (en) 2015-01-14 2018-06-05 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device comprising flexible substrate and light-emitting element
KR102356697B1 (ko) * 2015-01-15 2022-01-27 삼성디스플레이 주식회사 신축성 표시 장치 및 그의 제조 방법
KR102456698B1 (ko) 2015-01-15 2022-10-19 삼성디스플레이 주식회사 신축성 표시 장치
KR102320382B1 (ko) 2015-01-28 2021-11-02 삼성디스플레이 주식회사 전자 장치
US10477354B2 (en) 2015-02-20 2019-11-12 Mc10, Inc. Automated detection and configuration of wearable devices based on on-body status, location, and/or orientation
WO2016140961A1 (en) 2015-03-02 2016-09-09 Mc10, Inc. Perspiration sensor
KR102335807B1 (ko) * 2015-03-10 2021-12-08 삼성디스플레이 주식회사 표시 장치
KR102385327B1 (ko) * 2015-04-06 2022-04-12 삼성디스플레이 주식회사 플렉서블 표시 장치 및 이의 제조 방법
US10677647B2 (en) 2015-06-01 2020-06-09 The Board Of Trustees Of The University Of Illinois Miniaturized electronic systems with wireless power and near-field communication capabilities
EP3304130B1 (en) 2015-06-01 2021-10-06 The Board of Trustees of the University of Illinois Alternative approach to uv sensing
US10026721B2 (en) 2015-06-30 2018-07-17 Apple Inc. Electronic devices with soft input-output components
US9841548B2 (en) 2015-06-30 2017-12-12 Apple Inc. Electronic devices with soft input-output components
CN105049033B (zh) * 2015-07-01 2017-11-24 东南大学 基于砷化镓基低漏电流双悬臂梁开关的或非门
US10653332B2 (en) 2015-07-17 2020-05-19 Mc10, Inc. Conductive stiffener, method of making a conductive stiffener, and conductive adhesive and encapsulation layers
WO2017031129A1 (en) 2015-08-19 2017-02-23 Mc10, Inc. Wearable heat flux devices and methods of use
WO2017059215A1 (en) 2015-10-01 2017-04-06 Mc10, Inc. Method and system for interacting with a virtual environment
US10532211B2 (en) 2015-10-05 2020-01-14 Mc10, Inc. Method and system for neuromodulation and stimulation
DE102015014256B4 (de) 2015-11-05 2020-06-18 Airbus Defence and Space GmbH Mikroelektronisches Modul zur Reinigung einer Oberfläche, Modularray und Verfahren zur Reinigung einer Oberfläche
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants
WO2017085849A1 (ja) * 2015-11-19 2017-05-26 三井金属鉱業株式会社 誘電体層を有するプリント配線板の製造方法
CN105405983B (zh) * 2015-12-14 2017-05-10 吉林大学 具有周期性规则褶皱结构的可拉伸有机电致发光器件
CN106920800B (zh) * 2015-12-25 2019-07-23 昆山工研院新型平板显示技术中心有限公司 柔性显示器件及其形成方法
EP3420733A4 (en) 2016-02-22 2019-06-26 Mc10, Inc. SYSTEM, DEVICE AND METHOD FOR ACQUIRING ON THE BODY OF SENSOR AND CONCENTRATOR NODE COUPLED WITH SENSOR INFORMATION
US10277386B2 (en) 2016-02-22 2019-04-30 Mc10, Inc. System, devices, and method for on-body data and power transmission
KR102455039B1 (ko) * 2016-03-18 2022-10-17 삼성디스플레이 주식회사 신축성 디스플레이 장치
WO2017184705A1 (en) 2016-04-19 2017-10-26 Mc10, Inc. Method and system for measuring perspiration
ITUA20162943A1 (it) * 2016-04-27 2017-10-27 Pilegrowth Tech S R L Metodo per la fabbricazione industriale di una struttura a semiconduttore a ridotto incurvamento.
US10209602B2 (en) * 2016-05-31 2019-02-19 E Ink Corporation Stretchable electro-optic displays
US10002222B2 (en) * 2016-07-14 2018-06-19 Arm Limited System and method for perforating redundant metal in self-aligned multiple patterning
US10447347B2 (en) 2016-08-12 2019-10-15 Mc10, Inc. Wireless charger and high speed data off-loader
CN106229038B (zh) * 2016-09-07 2017-10-24 东华大学 一种基于多级结构石墨烯的可拉伸透明导电弹性体的制备方法
JP2018060932A (ja) * 2016-10-06 2018-04-12 ローム株式会社 Ｌｅｄパッケージ
CA3040514A1 (en) 2016-10-20 2018-04-26 Quantum Diamond Technologies Inc. Methods and apparatus for magnetic particle analysis using wide-field diamond magnetic imaging
JP2018078272A (ja) * 2016-10-31 2018-05-17 スリーエム イノベイティブ プロパティズ カンパニー 三次元形状熱伝導性成形体、及びその製造方法
CN106601933B (zh) * 2016-12-12 2018-02-23 吉林大学 一种具有规则褶皱结构的可拉伸电子器件的制备方法
EP3559668B1 (en) 2016-12-23 2023-07-19 Quantum Diamond Technologies Inc. Methods and apparatus for magnetic multi-bead assays
DE102017100053A1 (de) 2017-01-03 2018-07-05 Infineon Technologies Ag Rahmenmontage nach Folienexpansion
WO2018153421A2 (en) * 2017-02-24 2018-08-30 Flexucell Aps Light emitting transducer
JP2018179501A (ja) * 2017-04-03 2018-11-15 日本精工株式会社 近接覚センサ
EP3593423A4 (en) * 2017-04-12 2021-01-20 Sense Photonics, Inc. BEAM FORMING FOR ULTRA-SMALL VERTICAL RESONATOR SURFACE-EMITTING LASER (VCSEL) ARRAYS
US20180323239A1 (en) * 2017-05-03 2018-11-08 Innolux Corporation Display device
CN107248518B (zh) 2017-05-26 2020-04-17 京东方科技集团股份有限公司 光电传感器及其制作方法、显示装置
EP3639281A4 (en) * 2017-06-12 2021-04-21 3M Innovative Properties Company EXPANDABLE CONDUCTORS
EP3652786B1 (en) 2017-07-14 2022-08-03 King Abdullah University Of Science And Technology Flexible and stretchable imager, method of making a flexible and stretchable imager
ES2932362T3 (es) 2017-07-31 2023-01-18 Quantum Diamond Tech Inc Sistema sensor que comprende un cartucho de muestras que incluye una membrana flexible para soportar una muestra
CN107634054A (zh) * 2017-09-18 2018-01-26 天津大学 柔性衬底上硅纳米膜转数字逻辑反相器及其制作方法
US10205303B1 (en) * 2017-10-18 2019-02-12 Lumentum Operations Llc Vertical-cavity surface-emitting laser thin wafer bowing control
EP3709775A4 (en) * 2017-11-07 2021-08-04 Dai Nippon Printing Co., Ltd. EXTENSIBLE CIRCUIT SUBSTRATE AND ARTICLE
CN108009317A (zh) * 2017-11-09 2018-05-08 武汉大学 一种复合材料的热导率研究仿真和建模方法
WO2019096828A1 (en) 2017-11-15 2019-05-23 Smith & Nephew Plc Integrated sensor enabled wound monitoring and/or therapy dressings and systems
CN109859623B (zh) * 2017-11-30 2021-05-18 云谷（固安）科技有限公司 阵列基板及其制备方法及显示屏
KR101974575B1 (ko) * 2017-12-01 2019-05-02 포항공과대학교 산학협력단 싱크로트론 엑스선을 이용한 초소형 다중 경사 구조체 제조 방법
CN108417592A (zh) * 2018-02-12 2018-08-17 中国科学院半导体研究所 红外成像器件及其制备方法、仿生红外球面相机
KR102077306B1 (ko) * 2018-02-14 2020-02-13 광운대학교 산학협력단 실시간 당 모니터링 센서 시스템 및 저온 용액 공정에 기반한 당센서의 제조 방법
CN109346504B (zh) * 2018-09-30 2021-06-29 云谷（固安）科技有限公司 柔性显示面板及显示装置
CN109437091A (zh) * 2018-10-23 2019-03-08 中山大学 一种在弹性衬底上制备微纳结构的方法
CN111148364B (zh) * 2018-11-05 2021-01-26 北京梦之墨科技有限公司 一种柔性可拉伸电路及其制作方法
CN111556820A (zh) * 2018-12-10 2020-08-18 康宁公司 可动态弯折的汽车内部显示***
CN109671869B (zh) * 2018-12-12 2020-06-16 武汉华星光电半导体显示技术有限公司 复合膜层的制作方法及显示器件
CN109637366B (zh) * 2018-12-28 2020-10-09 厦门天马微电子有限公司 治具和显示模组的弯折方法
CN111724676B (zh) * 2019-03-21 2022-09-02 昆山工研院新型平板显示技术中心有限公司 可拉伸导线及其制作方法和显示装置
CN110393507B (zh) * 2019-08-01 2020-12-25 清华大学 柔性可延展电子器件的结构设计及其制造方法
CN110797148B (zh) * 2019-10-08 2021-07-30 上海交通大学 适用于无绝缘线圈的超导带材、无绝缘线圈及其制备方法
CN110683508B (zh) * 2019-10-18 2023-05-23 北京元芯碳基集成电路研究院 一种碳纳米管平行阵列的制备方法
CN110808295B (zh) * 2019-11-11 2021-04-23 重庆中易智芯科技有限责任公司 一种三维电致伸缩收集电极的半导体探测器及其制备方法
CN110697646A (zh) * 2019-11-22 2020-01-17 上海幂方电子科技有限公司 一种电子皮肤及其制备方法
US11062936B1 (en) 2019-12-19 2021-07-13 X Display Company Technology Limited Transfer stamps with multiple separate pedestals
CN111063658B (zh) * 2019-12-30 2020-09-29 清华大学 柔性可延展的电子器件的制造方法
US20230119125A1 (en) * 2020-02-12 2023-04-20 Rayleigh Solar Tech Inc. High performance perovskite solar cells, module design, and manufacturing processes therefor
GB2593864B (en) * 2020-02-28 2023-01-04 X Fab France Sas Improved transfer printing for RF applications
CN112967971B (zh) * 2020-05-27 2023-04-18 重庆康佳光电技术研究院有限公司 一种Micro-LED的转移基板及其制备方法
KR102393781B1 (ko) * 2020-07-07 2022-05-04 서울대학교산학협력단 유연 소자
CN112133198B (zh) * 2020-09-29 2022-04-22 厦门天马微电子有限公司 可拉伸显示面板及可拉伸显示装置
CN112606585B (zh) * 2020-12-02 2022-05-31 潍坊歌尔微电子有限公司 器件转印处理方法及微型麦克风防尘装置转印处理方法
KR102591096B1 (ko) * 2020-12-15 2023-10-18 연세대학교 산학협력단 인장 변형을 이용한 광 검출기 제조 방법, 이에 의해 제조되는 광 검출기, 및 그 제조 장치
KR102553142B1 (ko) * 2021-06-25 2023-07-06 경희대학교 산학협력단 감도 향상 구조를 갖는 전도성 고분자 복합재 기반 압저항 압력센서 및 그 제조방법
KR102582188B1 (ko) * 2021-07-22 2023-09-26 한국과학기술원 레이저 커팅된 플라스틱 기판을 활용한 신축 유기 발광 다이오드 및 그 제작 방법
CN113542755B (zh) * 2021-07-27 2022-06-21 展讯通信（上海）有限公司 二维楔形遮罩的产生方法及***
WO2023023976A1 (zh) * 2021-08-25 2023-03-02 京东方科技集团股份有限公司 射频微电子机械开关、射频装置
CN114286513B (zh) * 2021-11-30 2024-02-06 通元科技(惠州)有限公司 一种非对称预应力消除型led背板及其制作方法
CN114355489B (zh) * 2022-01-13 2023-05-16 西华大学 一种基于dmd数字光刻的曲面复眼透镜及其制备方法
KR20230112256A (ko) 2022-01-20 2023-07-27 공주대학교 산학협력단 물결 모양 배선 및 이의 제조방법
WO2023137539A1 (en) * 2022-01-21 2023-07-27 Decorby Raymond Monolithic optical pressure sensors and transducers
WO2023187834A1 (en) * 2022-03-30 2023-10-05 Council Of Scientific And Industrial Research Method for fabricating silicon chip carriers using wet bulk micromachining for ir detector applications

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5763864A (en) * 1980-09-29 1982-04-17 Messerschmitt Boelkow Blohm Solar battery mechanism
US4766670A (en) * 1987-02-02 1988-08-30 International Business Machines Corporation Full panel electronic packaging structure and method of making same
US5086785A (en) * 1989-08-10 1992-02-11 Abrams/Gentille Entertainment Inc. Angular displacement sensors
US5475514A (en) 1990-12-31 1995-12-12 Kopin Corporation Transferred single crystal arrayed devices including a light shield for projection displays
US5375397B1 (en) * 1993-06-22 1998-11-10 Robert J Ferrand Curve-conforming sensor array pad and method of measuring saddle pressures on a horse
JPH08298334A (ja) * 1995-04-26 1996-11-12 Mitsubishi Electric Corp 太陽電池板
US6784023B2 (en) * 1996-05-20 2004-08-31 Micron Technology, Inc. Method of fabrication of stacked semiconductor devices
DE19637626A1 (de) * 1996-09-16 1998-03-26 Bosch Gmbh Robert Flexible Leiterbahnverbindung
FR2786037B1 (fr) * 1998-11-16 2001-01-26 Alstom Technology Barre de conduction electrique de type blinde pour poste electrique haute tension
US6150602A (en) * 1999-05-25 2000-11-21 Hughes Electronics Corporation Large area solar cell extended life interconnect
US6413790B1 (en) * 1999-07-21 2002-07-02 E Ink Corporation Preferred methods for producing electrical circuit elements used to control an electronic display
JP2001352089A (ja) * 2000-06-08 2001-12-21 Showa Shell Sekiyu Kk 熱膨張歪み防止型太陽電池モジュール
US6743982B2 (en) * 2000-11-29 2004-06-01 Xerox Corporation Stretchable interconnects using stress gradient films
GB0029312D0 (en) * 2000-12-01 2001-01-17 Philips Corp Intellectual Pty Flexible electronic device
JP2004519719A (ja) * 2001-03-06 2004-07-02 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 表示装置
US7273987B2 (en) * 2002-03-21 2007-09-25 General Electric Company Flexible interconnect structures for electrical devices and light sources incorporating the same
JP3980918B2 (ja) * 2002-03-28 2007-09-26 株式会社東芝 アクティブマトリクス基板及びその製造方法、表示装置
JP2003323741A (ja) 2002-04-30 2003-11-14 National Institute Of Advanced Industrial & Technology 光学的メモリ
US20050227389A1 (en) * 2004-04-13 2005-10-13 Rabin Bhattacharya Deformable organic devices
US7465678B2 (en) * 2003-03-28 2008-12-16 The Trustees Of Princeton University Deformable organic devices
US7491892B2 (en) * 2003-03-28 2009-02-17 Princeton University Stretchable and elastic interconnects
GB0323285D0 (en) * 2003-10-04 2003-11-05 Koninkl Philips Electronics Nv Device and method of making a device having a patterned layer on a flexible substrate
WO2005098969A1 (ja) * 2004-04-08 2005-10-20 Sharp Kabushiki Kaisha 太陽電池及び太陽電池モジュール
US7521292B2 (en) * 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
JP2008502151A (ja) * 2004-06-04 2008-01-24 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ 印刷可能半導体素子を製造して組み立てるための方法及びデバイス
US7629691B2 (en) * 2004-06-16 2009-12-08 Honeywell International Inc. Conductor geometry for electronic circuits fabricated on flexible substrates
FR2875339B1 (fr) * 2004-09-16 2006-12-08 St Microelectronics Sa Transistor mos a grille deformable
US20060132025A1 (en) * 2004-12-22 2006-06-22 Eastman Kodak Company Flexible display designed for minimal mechanical strain
US20060160943A1 (en) * 2005-01-18 2006-07-20 Weir James P Water-based flock adhesives for thermoplastic substrates
CN2779218Y (zh) * 2005-02-01 2006-05-10 广德利德照明有限公司 一种管状led装饰灯的连接导线
TWI427802B (zh) * 2005-06-02 2014-02-21 Univ Illinois 可印刷半導體結構及製造和組合之相關方法
JP7099160B2 (ja) 2018-08-10 2022-07-12 住友電気工業株式会社 光ファイバの製造方法
US11394720B2 (en) 2019-12-30 2022-07-19 Itron, Inc. Time synchronization using trust aggregation

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