KR930006868A - 반도체 패키지 - Google Patents
반도체 패키지 Download PDFInfo
- Publication number
- KR930006868A KR930006868A KR1019910015864A KR910015864A KR930006868A KR 930006868 A KR930006868 A KR 930006868A KR 1019910015864 A KR1019910015864 A KR 1019910015864A KR 910015864 A KR910015864 A KR 910015864A KR 930006868 A KR930006868 A KR 930006868A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor package
- lead
- thickness
- semiconductor chip
- package according
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 239000003822 epoxy resin Substances 0.000 claims abstract 2
- 229920000647 polyepoxide Polymers 0.000 claims abstract 2
- 239000004642 Polyimide Substances 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 claims 1
- 238000004381 surface treatment Methods 0.000 claims 1
Classifications
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4835—Cleaning, e.g. removing of solder
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Abstract
본발명은 반도체 패키지에 관한 것으로서, 특히 반도체 칩에 직접 솔더링 또는 와이어 본딩되는 리드 프레임의 인너리드와 아우터리드의 두께를 각각 달리하여 소자의 경박 단소화에 기여할 수 있도록 한 것이다.
이를 위해, 본 발명은 반도체 칩(11)를 에폭시 수지(17)로 몰딩하여 그 외측으로 아우터리드(18)가 형성하도록 한 것에 있어서, 탭에 고정되는 인너리드(15)를 아우터리드(18)의 두께 보다 얇게 형성하여서된 반도체 패키지이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명의 테이프 캐리어 리드프레임의 구조를 나타낸 평면도,
제4도는 본 발명의 반도체 패키지 구조를 나타낸 종단면도,
제5도는 제3도의 "A"부 확대도,
제6도는 본발명의 다른 실시예.
Claims (5)
- 반도체 칩(11)을 에폭시 수지(17)로 몰딩하여 그 외측으로 아우터리드(18)가 형성되도록 한것에 있어서, 탭에 고정되는 아우터리드(18)를 인너리드(15)의 두께보다 두껍게 형성하여서된 반도체 패키지.
- 제1항에 있어서, 아우터리드(18)의 두께를 8-10mil로 하고, 인너리드(15)의 두께를 1mil로 하여서된 반도체 패키지.
- 제2항에 있어서, 아우터리드를 국부 플레이팅에 의하여 두껍게 형성하여서 된 반도체 패키지.
- 제1항 또는 제2항에 있어서, 탭의 인너리드(15)를 안쪽으로 끌어들임과 동시에 탭 부분도 안쪽으로 끌어들여 반도체 칩(11)의 윗부분을 탭이 커버하도록 된 LOC 형태의 반도체 패키지.
- 제1항 또는 제2항에 있어서, 폴리이미트 테이프 중 반도체 칩(11)에 붙는 부분을 MaOH나 HOK로 표면처리 하여서된 반도체 패키지.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910015864A KR930006868A (ko) | 1991-09-11 | 1991-09-11 | 반도체 패키지 |
DE4230030A DE4230030A1 (de) | 1991-09-11 | 1992-09-08 | Halbleitergehaeuse und verfahren zu dessen zusammenbau |
JP26563392A JP3535879B2 (ja) | 1991-09-11 | 1992-09-09 | 半導体パッケージアセンブリ方法 |
US08/308,624 US5619065A (en) | 1991-09-11 | 1994-09-19 | Semiconductor package and method for assembling the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910015864A KR930006868A (ko) | 1991-09-11 | 1991-09-11 | 반도체 패키지 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR930006868A true KR930006868A (ko) | 1993-04-22 |
Family
ID=19319827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910015864A KR930006868A (ko) | 1991-09-11 | 1991-09-11 | 반도체 패키지 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5619065A (ko) |
JP (1) | JP3535879B2 (ko) |
KR (1) | KR930006868A (ko) |
DE (1) | DE4230030A1 (ko) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3383081B2 (ja) * | 1994-07-12 | 2003-03-04 | 三菱電機株式会社 | 陽極接合法を用いて製造した電子部品及び電子部品の製造方法 |
FR2733630B1 (fr) * | 1995-04-27 | 1997-05-30 | Imphy Sa | Pattes de connexion pour composant electronique |
KR100214480B1 (ko) * | 1996-05-17 | 1999-08-02 | 구본준 | 반도체 패키지용 리드 프레임 |
DE19629767C2 (de) * | 1996-07-23 | 2003-11-27 | Infineon Technologies Ag | Anschlußrahmen für Halbleiter-Chips und Halbeiter-Modul |
US5902959A (en) * | 1996-09-05 | 1999-05-11 | International Rectifier Corporation | Lead frame with waffled front and rear surfaces |
US5796162A (en) * | 1996-09-17 | 1998-08-18 | Greatek Technology Co., Ltd. | Frames locking method for packaging semiconductor chip |
KR100214544B1 (ko) * | 1996-12-28 | 1999-08-02 | 구본준 | 볼 그리드 어레이 반도체 패키지 |
US5923081A (en) * | 1997-05-15 | 1999-07-13 | Micron Technology, Inc. | Compression layer on the leadframe to reduce stress defects |
JP3085278B2 (ja) * | 1998-05-01 | 2000-09-04 | 日本電気株式会社 | 半導体装置の製造方法および半導体製造装置 |
US6008074A (en) * | 1998-10-01 | 1999-12-28 | Micron Technology, Inc. | Method of forming a synchronous-link dynamic random access memory edge-mounted device |
JP2000188366A (ja) * | 1998-12-24 | 2000-07-04 | Hitachi Ltd | 半導体装置 |
US6239489B1 (en) | 1999-07-30 | 2001-05-29 | Micron Technology, Inc. | Reinforcement of lead bonding in microelectronics packages |
US6700210B1 (en) | 1999-12-06 | 2004-03-02 | Micron Technology, Inc. | Electronic assemblies containing bow resistant semiconductor packages |
US6384487B1 (en) | 1999-12-06 | 2002-05-07 | Micron Technology, Inc. | Bow resistant plastic semiconductor package and method of fabrication |
DE10321257B4 (de) * | 2003-05-06 | 2006-04-27 | Infineon Technologies Ag | Optische oder optoelektronische Anordnung mit mindestens einem auf einem Metallträger angeordneten optoelektronischen Bauelement |
US20050281056A1 (en) * | 2004-05-25 | 2005-12-22 | Loomis Jason A | Ornament lighting apparatus |
DE102004057485B4 (de) * | 2004-11-29 | 2007-10-18 | Infineon Technologies Ag | Leistungshalbleiterbauelement und Verfahren zu dessen Herstellung |
US20090045491A1 (en) * | 2007-08-15 | 2009-02-19 | Advanced Semiconductor Engineering, Inc. | Semiconductor package structure and leadframe thereof |
US8334467B2 (en) * | 2009-06-17 | 2012-12-18 | Lsi Corporation | Lead frame design to improve reliability |
WO2012108011A1 (ja) * | 2011-02-09 | 2012-08-16 | 三菱電機株式会社 | パワー半導体モジュール |
US9287200B2 (en) * | 2013-06-27 | 2016-03-15 | Freescale Semiconductor, Inc. | Packaged semiconductor device |
JP6392654B2 (ja) | 2014-02-04 | 2018-09-19 | エイブリック株式会社 | 光センサ装置 |
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DD82790A (ko) * | ||||
DE2037666A1 (de) * | 1970-07-29 | 1972-02-03 | Siemens Ag | Verfahren zum Kontaktieren eines mit mehreren Elektroden versehenen Halbleiterkörpers mit Hilfe eines aus einem Metallblech hergestellten Systems von elektrischen Zuleitungen |
US3778685A (en) * | 1972-03-27 | 1973-12-11 | Nasa | Integrated circuit package with lead structure and method of preparing the same |
US4210926A (en) * | 1977-12-07 | 1980-07-01 | Siemens Aktiengesellschaft | Intermediate member for mounting and contacting a semiconductor body |
JPS55156343A (en) * | 1979-05-25 | 1980-12-05 | Hitachi Ltd | Manufacture of semiconductor device |
JPS56150830A (en) * | 1980-04-25 | 1981-11-21 | Hitachi Ltd | Semiconductor device |
JPS607747A (ja) * | 1983-06-27 | 1985-01-16 | Nec Corp | 樹脂封止型半導体装置 |
DE3511999A1 (de) * | 1985-04-02 | 1986-10-02 | Wieland-Werke Ag, 7900 Ulm | Verwendung einer kupfer-titan-kobalt-legierung als werkstoff fuer elektronische bauteile |
US4711700A (en) * | 1985-07-03 | 1987-12-08 | United Technologies Corporation | Method for densifying leadframe conductor spacing |
GB2178895B (en) * | 1985-08-06 | 1988-11-23 | Gen Electric Co Plc | Improved preparation of fragile devices |
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JPS6331149A (ja) * | 1986-07-25 | 1988-02-09 | Fujitsu Ltd | 半導体装置 |
JPS63148670A (ja) * | 1986-12-12 | 1988-06-21 | Texas Instr Japan Ltd | リ−ドフレ−ム材 |
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KR960006710B1 (ko) * | 1987-02-25 | 1996-05-22 | 가부시기가이샤 히다찌세이사꾸쇼 | 면실장형 반도체집적회로장치 및 그 제조방법과 그 실장방법 |
US5270570A (en) * | 1988-10-10 | 1993-12-14 | Lsi Logic Products Gmbh | Lead frame for a multiplicity of terminals |
DE69010546T2 (de) * | 1989-04-17 | 1995-02-09 | Matsushita Electric Ind Co Ltd | Hochfrequenz-Halbleiteranordnung. |
JP2712618B2 (ja) * | 1989-09-08 | 1998-02-16 | 三菱電機株式会社 | 樹脂封止型半導体装置 |
DE3939527A1 (de) * | 1989-10-28 | 1991-05-02 | Aatec Assembling Automations T | Band aus metall zur verwendung in der halbleiterfertigung und verfahren zu seiner herstellung |
US5136367A (en) * | 1990-08-31 | 1992-08-04 | Texas Instruments Incorporated | Low cost erasable programmable read only memory package |
JPH05102364A (ja) * | 1991-10-11 | 1993-04-23 | Rohm Co Ltd | 電子部品用リードフレームの製造方法 |
US5221858A (en) * | 1992-02-14 | 1993-06-22 | Motorola, Inc. | Tape automated bonding (TAB) semiconductor device with ground plane and method for making the same |
-
1991
- 1991-09-11 KR KR1019910015864A patent/KR930006868A/ko not_active Application Discontinuation
-
1992
- 1992-09-08 DE DE4230030A patent/DE4230030A1/de not_active Ceased
- 1992-09-09 JP JP26563392A patent/JP3535879B2/ja not_active Expired - Lifetime
-
1994
- 1994-09-19 US US08/308,624 patent/US5619065A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5619065A (en) | 1997-04-08 |
JPH05226562A (ja) | 1993-09-03 |
JP3535879B2 (ja) | 2004-06-07 |
DE4230030A1 (de) | 1993-03-18 |
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