KR870009468A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR870009468A
KR870009468A KR860009524A KR860009524A KR870009468A KR 870009468 A KR870009468 A KR 870009468A KR 860009524 A KR860009524 A KR 860009524A KR 860009524 A KR860009524 A KR 860009524A KR 870009468 A KR870009468 A KR 870009468A
Authority
KR
South Korea
Prior art keywords
semiconductor devices
ultraviolet
semiconductor
semiconductor chip
resin
Prior art date
Application number
KR860009524A
Other languages
English (en)
Other versions
KR900007758B1 (ko
Inventor
싱고 이께마
Original Assignee
시끼 모리야
미쓰비시전기 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 시끼 모리야, 미쓰비시전기 주식회사 filed Critical 시끼 모리야
Publication of KR870009468A publication Critical patent/KR870009468A/ko
Application granted granted Critical
Publication of KR900007758B1 publication Critical patent/KR900007758B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/18—Circuits for erasing optically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Semiconductor Memories (AREA)

Abstract

내용 없음

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 한 실시예에 의한 반도체 장치를 표시한 단면도.
제2도는 다른 실시예 장치를 표시하는 단면도.
제3도는 종래의 반복 소거 가능형의 자외선 소지형 반도체 장치의 조립단면도.

Claims (1)

  1. 자외선 소기형 반도체 기억장치를 탑제시킨 반도체 칩을 수지 밀봉하여서 되는 반도체 장치에 있어서 상기 반도체 칩의 와이어본딩용 전극부를 제외한 표면의 일부 또는 전부가 자외선 투과형 수지로 피복된 것을 특징으로 하는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860009524A 1986-03-14 1986-11-12 반도체 장치 KR900007758B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP57468 1986-03-14
JP61-57468 1986-03-14
JP5746886A JPH0783075B2 (ja) 1986-03-14 1986-03-14 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR870009468A true KR870009468A (ko) 1987-10-27
KR900007758B1 KR900007758B1 (ko) 1990-10-19

Family

ID=13056518

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860009524A KR900007758B1 (ko) 1986-03-14 1986-11-12 반도체 장치

Country Status (5)

Country Link
US (1) US4853761A (ko)
JP (1) JPH0783075B2 (ko)
KR (1) KR900007758B1 (ko)
DE (1) DE3708251A1 (ko)
GB (1) GB2189646B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5045918A (en) * 1986-12-19 1991-09-03 North American Philips Corp. Semiconductor device with reduced packaging stress
US5171716A (en) * 1986-12-19 1992-12-15 North American Philips Corp. Method of manufacturing semiconductor device with reduced packaging stress
JPH02105418A (ja) * 1988-10-14 1990-04-18 Mitsubishi Electric Corp 樹脂封止型半導体装置
JPH04261049A (ja) * 1991-01-31 1992-09-17 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP5147249B2 (ja) * 2007-01-31 2013-02-20 オンセミコンダクター・トレーディング・リミテッド 半導体装置の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3622419A (en) * 1969-10-08 1971-11-23 Motorola Inc Method of packaging an optoelectrical device
US4001872A (en) * 1973-09-28 1977-01-04 Rca Corporation High-reliability plastic-packaged semiconductor device
JPS55156343A (en) * 1979-05-25 1980-12-05 Hitachi Ltd Manufacture of semiconductor device
JPS56137658A (en) * 1980-03-31 1981-10-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
JPS5763831A (en) * 1980-10-06 1982-04-17 Nec Corp Semiconductor device
DE3125284A1 (de) * 1981-06-26 1983-01-13 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von bauelementen aus halbleiterscheiben
US4460915A (en) * 1981-12-28 1984-07-17 Intel Corporation Plastic package for radiation sensitive semiconductor devices
JPS58126645A (ja) * 1982-01-22 1983-07-28 Toshiba Corp 偏向ヨ−ク装置
US4574465A (en) * 1982-04-13 1986-03-11 Texas Instruments Incorporated Differing field oxide thicknesses in dynamic memory device
JPS58182837A (ja) * 1982-04-21 1983-10-25 Hitachi Ltd 樹脂封止半導体装置の製造方法
JPS59110174A (ja) * 1982-12-15 1984-06-26 Hitachi Ltd 固体撮像装置
JPS6083338A (ja) * 1983-10-14 1985-05-11 Oki Electric Ind Co Ltd Ｅｐｒｏｍ装置の製造方法
JPS6083337A (ja) * 1983-10-14 1985-05-11 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS6083351A (ja) * 1983-10-14 1985-05-11 Oki Electric Ind Co Ltd Ｅｐｒｏｍ装置

Also Published As

Publication number Publication date
KR900007758B1 (ko) 1990-10-19
GB2189646B (en) 1990-07-11
US4853761A (en) 1989-08-01
JPH0783075B2 (ja) 1995-09-06
DE3708251A1 (de) 1987-09-17
GB8706061D0 (en) 1987-04-15
GB2189646A (en) 1987-10-28
JPS62214649A (ja) 1987-09-21
DE3708251C2 (ko) 1992-06-04

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