KR101047646B1 - 마스크 블랭크 및 그 제조방법 - Google Patents
마스크 블랭크 및 그 제조방법 Download PDFInfo
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- KR101047646B1 KR101047646B1 KR1020080065551A KR20080065551A KR101047646B1 KR 101047646 B1 KR101047646 B1 KR 101047646B1 KR 1020080065551 A KR1020080065551 A KR 1020080065551A KR 20080065551 A KR20080065551 A KR 20080065551A KR 101047646 B1 KR101047646 B1 KR 101047646B1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/40—Distributing applied liquids or other fluent materials by members moving relatively to surface
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
비교예 4 |
실시예 | 비교예 5 |
|||||
3 | 4 | 5 | 6 | 7 | |||
회전 속도 |
50 rpm |
100rpm |
150rpm |
200rpm |
300rpm |
450rpm |
500rpm |
기판내의 레지스트 필름 두께 균일성 |
115Å |
58Å |
49Å |
43Å |
40Å |
55Å |
108Å |
실시예 | 비교예 | |||||||
8 | 9 | 10 | 11 | 6 | 7 | 8 | 9 | |
주회전 속도 |
1200 rpm |
1400 rpm |
1750 rpm |
1900 rpm |
1000 rpm |
1000 rpm |
2000 rpm |
2000 rpm |
주회전 시간 |
3 sec |
2.5 sec |
1.5 sec |
1 sec |
1 sec |
5.5 sec |
1 sec |
4 sec |
기판내의 레지스트 필름 두께 균일성 |
90Å |
49Å |
48Å |
87Å |
280Å |
267Å |
123Å |
434Å |
실시예 | ||||||||
16 | 17 | 18 | 19 | 20 | 21 | 22 | 23 | |
주회전 속도 |
850 rpm |
850 rpm |
2000 rpm |
1850 rpm |
1700 rpm |
1000 rpm |
1350 rpm |
1500 rpm |
주회전 시간 |
6 sec |
15 sec |
5 sec |
12 sec |
7.5 sec |
12.5 sec |
13 sec |
15 sec |
건조 회전 속도 |
250 rpm |
250 rpm |
250 rpm |
250 rpm |
250 rpm |
250 rpm |
50 rpm |
450 rpm |
기판내의 레지스트 필름 두께 균일성 |
98Å |
87Å |
91Å |
85Å |
44Å |
49Å |
93Å |
90Å |
비교예 | ||||
10 | 11 | 12 | 13 | |
주회전 속도 |
850 rpm |
800 rpm |
2000 rpm |
2050 rpm |
주회전 시간 |
4 sec |
6 sec |
4 sec |
6 sec |
건조 회전 속도 |
250 rpm |
250 rpm |
150 rpm |
200 rpm |
기판내의 레지스트 필름 두께 균일성 |
198Å |
157Å |
212Å |
117Å |
Claims (9)
- 기판 사이즈가 6인치× 6인치인 사각형 기판상으로 레지스트액을 배분하는 단계;상기 기판으로 배분된 레지스트액이 퍼지도록 기판을 회전시키는 균일 코팅 단계; 및상기 기판상에 퍼진 레지스트액이 건조되도록 기판을 회전시키는 건조 단계를 포함하며,상기 균일 코팅 단계 및 건조 단계 동안, 상기 기판의 중심으로부터 상기 기판의 바깥 가장자리부로 기판의 상부표면을 따라 기류를 0.5~5m/sec의 속도로 발생시키고,상기 건조 단계에서의 기판 회전 속도는 상기 균일 코팅 단계에서의 기판 회전 속도보다 낮으며,상기 건조 단계에서의 기판 회전 속도는 150-300rpm인 것을 특징으로 하는 마스크 블랭크 제조방법.
- 제1항에 있어서, 상기 균일 코팅 단계에서의 기판 회전 속도는 850-2000rpm이고 기판 회전 시간은 1-10초인 것을 특징으로 하는 마스크 블랭크 제조방법.
- 제1항에 있어서, 상기 레지스트액은, 점도가 10mPa·s 이하인 것을 특징으로 하는 마스크 블랭크 제조방법.
- 제1항에 있어서, 상기 레지스트액은 평균 분자량이 100000 미만인 것을 특징으로 하는 마스크 블랭크 제조방법.
- 제1항에 있어서, 상기 기판은, 상기 기판 상에 마스크 패턴이 되는 박막을 형성한 박막 부착 기판인 것을 특징으로 하는 마스크 블랭크 제조 방법.
- 제1항 내지 제5항 중 어느 하나의 마스크 블랭크 제조방법을 사용하여 제조된 것을 특징으로 하는 마스크 블랭크.
- 제5항의 마스크 블랭크 제조 방법을 이용하여 제조된 마스크 블랭크의 상기 박막을 패터닝하고, 상기 기판상에 주 패턴과 보조 패턴을 가지는 마스크 패턴을 형성하는 것을 특징으로 하는 전사 마스크의 제조 방법.
- 삭제
- 삭제
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JPJP-P-2003-00338533 | 2003-09-29 | ||
JP2003338533 | 2003-09-29 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020040077049A Division KR20050031425A (ko) | 2003-09-29 | 2004-09-24 | 마스크 블랭크 및 그 제조방법 |
Related Child Applications (1)
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KR1020100058019A Division KR101045177B1 (ko) | 2003-09-29 | 2010-06-18 | 마스크 블랭크 및 그 제조방법 |
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Publication Number | Publication Date |
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KR20080075816A KR20080075816A (ko) | 2008-08-19 |
KR101047646B1 true KR101047646B1 (ko) | 2011-07-07 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020040077049A KR20050031425A (ko) | 2003-09-29 | 2004-09-24 | 마스크 블랭크 및 그 제조방법 |
KR1020070031715A KR20070039909A (ko) | 2003-09-29 | 2007-03-30 | 마스크 블랭크 및 그 제조방법 |
KR1020070031697A KR100976977B1 (ko) | 2003-09-29 | 2007-03-30 | 마스크 블랭크 및 그 제조방법 |
KR1020080065551A KR101047646B1 (ko) | 2003-09-29 | 2008-07-07 | 마스크 블랭크 및 그 제조방법 |
KR1020100058019A KR101045177B1 (ko) | 2003-09-29 | 2010-06-18 | 마스크 블랭크 및 그 제조방법 |
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KR1020040077049A KR20050031425A (ko) | 2003-09-29 | 2004-09-24 | 마스크 블랭크 및 그 제조방법 |
KR1020070031715A KR20070039909A (ko) | 2003-09-29 | 2007-03-30 | 마스크 블랭크 및 그 제조방법 |
KR1020070031697A KR100976977B1 (ko) | 2003-09-29 | 2007-03-30 | 마스크 블랭크 및 그 제조방법 |
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KR1020100058019A KR101045177B1 (ko) | 2003-09-29 | 2010-06-18 | 마스크 블랭크 및 그 제조방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7674561B2 (ko) |
JP (2) | JP2011040770A (ko) |
KR (5) | KR20050031425A (ko) |
CN (2) | CN100537053C (ko) |
DE (1) | DE102004047355B4 (ko) |
TW (2) | TWI387846B (ko) |
Families Citing this family (17)
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DE112005001588B4 (de) * | 2004-07-09 | 2021-02-25 | Hoya Corp. | Fotomaskenrohling, Fotomaskenherstellungsverfahren und Halbleiterbausteinherstellungsverfahren |
US7678511B2 (en) * | 2006-01-12 | 2010-03-16 | Asahi Glass Company, Limited | Reflective-type mask blank for EUV lithography |
KR100780814B1 (ko) * | 2006-08-16 | 2007-11-30 | 주식회사 에스앤에스텍 | 차폐판 및 이를 구비한 레지스트 코팅장치 |
JP5348866B2 (ja) * | 2007-09-14 | 2013-11-20 | Hoya株式会社 | マスクの製造方法 |
JP5393972B2 (ja) * | 2007-11-05 | 2014-01-22 | Hoya株式会社 | マスクブランク及び転写用マスクの製造方法 |
JP4663749B2 (ja) * | 2008-03-11 | 2011-04-06 | 大日本印刷株式会社 | 反射型マスクの検査方法および製造方法 |
KR101654515B1 (ko) * | 2009-07-01 | 2016-09-07 | 주식회사 에스앤에스텍 | 포토마스크 블랭크, 포토마스크 블랭크의 제조방법 및 포토마스크 |
CN101968606B (zh) * | 2009-07-27 | 2013-01-23 | 北京京东方光电科技有限公司 | 掩膜基板和边框胶固化*** |
KR102239197B1 (ko) * | 2012-09-13 | 2021-04-09 | 호야 가부시키가이샤 | 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법 |
KR102167485B1 (ko) * | 2012-09-13 | 2020-10-19 | 호야 가부시키가이샤 | 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법 |
CN106610568A (zh) * | 2015-10-27 | 2017-05-03 | 沈阳芯源微电子设备有限公司 | 一种涂胶显影工艺模块及该模块内环境参数的控制方法 |
JP6504996B2 (ja) * | 2015-11-04 | 2019-04-24 | 東京エレクトロン株式会社 | 塗布膜形成方法、塗布膜形成装置、及びコンピュータ読み取り可能な記録媒体 |
KR102513705B1 (ko) * | 2018-06-29 | 2023-03-24 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 및 포토마스크 |
CN112655074B (zh) * | 2018-09-10 | 2024-07-12 | 东京毅力科创株式会社 | 涂布膜形成方法以及涂布膜形成装置 |
JP7154572B2 (ja) * | 2018-09-12 | 2022-10-18 | Hoya株式会社 | マスクブランク、転写用マスク、及び半導体デバイスの製造方法 |
JP7202901B2 (ja) * | 2019-01-18 | 2023-01-12 | 東京エレクトロン株式会社 | 塗布膜形成方法及び塗布膜形成装置 |
TWI699580B (zh) * | 2019-03-07 | 2020-07-21 | 友達光電股份有限公司 | 陣列基板 |
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JP2011040770A (ja) | 2011-02-24 |
US7674561B2 (en) | 2010-03-09 |
TW200517786A (en) | 2005-06-01 |
KR101045177B1 (ko) | 2011-06-30 |
CN100537053C (zh) | 2009-09-09 |
TWI391779B (zh) | 2013-04-01 |
KR100976977B1 (ko) | 2010-08-23 |
KR20080075816A (ko) | 2008-08-19 |
DE102004047355B4 (de) | 2022-03-10 |
KR20050031425A (ko) | 2005-04-06 |
KR20100085003A (ko) | 2010-07-28 |
KR20070039909A (ko) | 2007-04-13 |
TW200837492A (en) | 2008-09-16 |
JP2015111312A (ja) | 2015-06-18 |
US20050069787A1 (en) | 2005-03-31 |
TWI387846B (zh) | 2013-03-01 |
KR20070039908A (ko) | 2007-04-13 |
CN1983028A (zh) | 2007-06-20 |
DE102004047355A1 (de) | 2005-04-28 |
CN1605397A (zh) | 2005-04-13 |
CN1983028B (zh) | 2012-07-25 |
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