DE102004047355A1 - Maskenrohlinge und Verfahren zu ihrer Herstellung - Google Patents
Maskenrohlinge und Verfahren zu ihrer Herstellung Download PDFInfo
- Publication number
- DE102004047355A1 DE102004047355A1 DE102004047355A DE102004047355A DE102004047355A1 DE 102004047355 A1 DE102004047355 A1 DE 102004047355A1 DE 102004047355 A DE102004047355 A DE 102004047355A DE 102004047355 A DE102004047355 A DE 102004047355A DE 102004047355 A1 DE102004047355 A1 DE 102004047355A1
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- resist
- resist solution
- resist film
- center
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 12
- 230000002093 peripheral effect Effects 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/40—Distributing applied liquids or other fluent materials by members moving relatively to surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Ein Verfahren zur Herstellung eines Maskenrohlings hat einen Resistfilmbildungsprozeß mit den folgenden Schritten: Abgeben einer Resistlösung, die ein Resistmaterial und ein Lösungsmittel enthält, auf ein quadratartiges Substrat und Drehen des Substrats, um die abgegebene Resistlösung über das Substrat zu verteilen und die Resistlösung auf dem Substrat zu trocknen, wodurch ein Resistfilm auf dem Substrat gebildet wird. Während das Substrat im Resistfilmbildungsprozeß (Resistbeschichtungsprozeß) gedreht wird, führt ein Absaugteil einen Absaugbetrieb durch, um einen Luftstrom entlang einer Oberseite des Substrats von der Mitte des Substrats zu einem Außenumfangsabschnitt des Substrats zu bewirken, so daß eine Lache der Resistlösung, die an einem Umfangsendabschnitt des Substrats gebildet wird, daran gehindert wird, zur Mitte des Substrats durch die Drehung des Substrats bewegt zu werden.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003-338533 | 2003-09-29 | ||
JP2003338533 | 2003-09-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE102004047355A1 true DE102004047355A1 (de) | 2005-04-28 |
DE102004047355B4 DE102004047355B4 (de) | 2022-03-10 |
Family
ID=34373315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102004047355.2A Expired - Fee Related DE102004047355B4 (de) | 2003-09-29 | 2004-09-29 | Verfahren zur Herstellung von Maskenrohlingen |
Country Status (6)
Country | Link |
---|---|
US (1) | US7674561B2 (de) |
JP (2) | JP2011040770A (de) |
KR (5) | KR20050031425A (de) |
CN (2) | CN100537053C (de) |
DE (1) | DE102004047355B4 (de) |
TW (2) | TWI387846B (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112005001588B4 (de) * | 2004-07-09 | 2021-02-25 | Hoya Corp. | Fotomaskenrohling, Fotomaskenherstellungsverfahren und Halbleiterbausteinherstellungsverfahren |
US7678511B2 (en) * | 2006-01-12 | 2010-03-16 | Asahi Glass Company, Limited | Reflective-type mask blank for EUV lithography |
KR100780814B1 (ko) * | 2006-08-16 | 2007-11-30 | 주식회사 에스앤에스텍 | 차폐판 및 이를 구비한 레지스트 코팅장치 |
JP5348866B2 (ja) * | 2007-09-14 | 2013-11-20 | Hoya株式会社 | マスクの製造方法 |
JP5393972B2 (ja) * | 2007-11-05 | 2014-01-22 | Hoya株式会社 | マスクブランク及び転写用マスクの製造方法 |
JP4663749B2 (ja) * | 2008-03-11 | 2011-04-06 | 大日本印刷株式会社 | 反射型マスクの検査方法および製造方法 |
KR101654515B1 (ko) * | 2009-07-01 | 2016-09-07 | 주식회사 에스앤에스텍 | 포토마스크 블랭크, 포토마스크 블랭크의 제조방법 및 포토마스크 |
CN101968606B (zh) * | 2009-07-27 | 2013-01-23 | 北京京东方光电科技有限公司 | 掩膜基板和边框胶固化*** |
KR102239197B1 (ko) * | 2012-09-13 | 2021-04-09 | 호야 가부시키가이샤 | 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법 |
KR102167485B1 (ko) * | 2012-09-13 | 2020-10-19 | 호야 가부시키가이샤 | 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법 |
CN106610568A (zh) * | 2015-10-27 | 2017-05-03 | 沈阳芯源微电子设备有限公司 | 一种涂胶显影工艺模块及该模块内环境参数的控制方法 |
JP6504996B2 (ja) * | 2015-11-04 | 2019-04-24 | 東京エレクトロン株式会社 | 塗布膜形成方法、塗布膜形成装置、及びコンピュータ読み取り可能な記録媒体 |
KR102513705B1 (ko) * | 2018-06-29 | 2023-03-24 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 및 포토마스크 |
CN112655074B (zh) * | 2018-09-10 | 2024-07-12 | 东京毅力科创株式会社 | 涂布膜形成方法以及涂布膜形成装置 |
JP7154572B2 (ja) * | 2018-09-12 | 2022-10-18 | Hoya株式会社 | マスクブランク、転写用マスク、及び半導体デバイスの製造方法 |
JP7202901B2 (ja) * | 2019-01-18 | 2023-01-12 | 東京エレクトロン株式会社 | 塗布膜形成方法及び塗布膜形成装置 |
TWI699580B (zh) * | 2019-03-07 | 2020-07-21 | 友達光電股份有限公司 | 陣列基板 |
Family Cites Families (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54153844A (en) * | 1978-05-23 | 1979-12-04 | Cho Lsi Gijutsu Kenkyu Kumiai | Rotary coating for resist |
JPS60123031A (ja) | 1983-12-08 | 1985-07-01 | Hoya Corp | レジスト塗布方法 |
JPS618480U (ja) * | 1984-06-18 | 1986-01-18 | 凸版印刷株式会社 | 回転塗布装置 |
JPS6295172A (ja) | 1985-10-21 | 1987-05-01 | Hitachi Ltd | 回転塗布装置 |
JPS63229169A (ja) | 1987-03-18 | 1988-09-26 | Hitachi Ltd | 塗布装置 |
JP2583239B2 (ja) * | 1987-06-16 | 1997-02-19 | 大日本印刷株式会社 | フォトマスク用基板等へのレジスト塗布方法およびスピンナチャック装置 |
DE68920380T2 (de) * | 1988-08-19 | 1995-05-11 | Hitachi Maxell | Aufzeichnungsmedium für optische Daten und Herstellungsgerät und -methode dafür. |
JP2505033B2 (ja) * | 1988-11-28 | 1996-06-05 | 東京応化工業株式会社 | 電子線レジスト組成物及びそれを用いた微細パタ―ンの形成方法 |
JPH02249225A (ja) * | 1989-03-22 | 1990-10-05 | Fujitsu Ltd | レジスト塗布装置 |
US4988464A (en) * | 1989-06-01 | 1991-01-29 | Union Carbide Corporation | Method for producing powder by gas atomization |
JPH0588367A (ja) * | 1991-09-30 | 1993-04-09 | Fujitsu Ltd | レジスト組成物とレジストパターンの形成方法 |
WO1994019396A1 (en) | 1992-02-12 | 1994-09-01 | Brewer Science, Inc. | Polymers with intrinsic light-absorbing properties |
US5691115A (en) * | 1992-06-10 | 1997-11-25 | Hitachi, Ltd. | Exposure method, aligner, and method of manufacturing semiconductor integrated circuit devices |
US5380609A (en) * | 1992-07-30 | 1995-01-10 | Dai Nippon Printing Co., Ltd. | Method for fabricating photomasks having a phase shift layer comprising the use of a positive to negative resist, substrate imaging and heating |
DE4400975C2 (de) * | 1993-01-14 | 2001-11-29 | Toshiba Kawasaki Kk | Verfahren zum Ausbilden von Mustern |
JPH06250380A (ja) * | 1993-02-26 | 1994-09-09 | Hoya Corp | 不要膜除去方法及びその装置並びに位相シフトマスクブランクの製造方法 |
JPH06267836A (ja) | 1993-03-15 | 1994-09-22 | Casio Comput Co Ltd | レジスト塗布方法およびその装置 |
JP3345468B2 (ja) * | 1993-07-05 | 2002-11-18 | ホーヤ株式会社 | 不要膜除去方法及びその装置並びに位相シフトマスクブランクス製造方法 |
KR960015081A (ko) | 1993-07-15 | 1996-05-22 | 마쯔모또 에이이찌 | 화학증폭형 레지스트 조성물 |
US5695817A (en) * | 1994-08-08 | 1997-12-09 | Tokyo Electron Limited | Method of forming a coating film |
JPH0945611A (ja) | 1995-07-27 | 1997-02-14 | Dainippon Screen Mfg Co Ltd | 回転式基板塗布装置 |
US6165673A (en) | 1995-12-01 | 2000-12-26 | International Business Machines Corporation | Resist composition with radiation sensitive acid generator |
JPH09225375A (ja) | 1996-02-22 | 1997-09-02 | Seiko Epson Corp | スピンコーターヘッド |
JP3198915B2 (ja) * | 1996-04-02 | 2001-08-13 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料 |
TW344097B (en) | 1996-04-09 | 1998-11-01 | Tokyo Electron Co Ltd | Photoresist treating device of substrate and photoresist treating method |
JPH1028925A (ja) | 1996-07-19 | 1998-02-03 | Dainippon Screen Mfg Co Ltd | 塗布液塗布方法 |
JPH1090882A (ja) | 1996-09-17 | 1998-04-10 | Fuji Photo Film Co Ltd | 化学増幅型ポジレジスト組成物 |
JPH10154650A (ja) | 1996-11-25 | 1998-06-09 | Dainippon Screen Mfg Co Ltd | 塗布液塗布方法 |
US5962184A (en) | 1996-12-13 | 1999-10-05 | International Business Machines Corporation | Photoresist composition comprising a copolymer of a hydroxystyrene and a (meth)acrylate substituted with an alicyclic ester substituent |
US5773082A (en) | 1997-01-16 | 1998-06-30 | United Microelectronics Corp. | Method for applying photoresist on wafer |
JPH10286510A (ja) * | 1997-04-16 | 1998-10-27 | Fujitsu Ltd | レジスト塗布装置及びレジスト塗布方法 |
JPH1142460A (ja) * | 1997-07-28 | 1999-02-16 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
US5780105A (en) | 1997-07-31 | 1998-07-14 | Vanguard International Semiconductor Corporation | Method for uniformly coating a semiconductor wafer with photoresist |
JPH1149806A (ja) * | 1997-08-01 | 1999-02-23 | Nippon Zeon Co Ltd | (メタ)アクリル酸エステル共重合体の製造方法 |
WO1999024869A1 (fr) * | 1997-11-11 | 1999-05-20 | Nikon Corporation | Photomasque plaque de correction d'aberration, dispositif d'exposition et procede de fabrication de micro-dispositif |
US6162564A (en) | 1997-11-25 | 2000-12-19 | Kabushiki Kaisha Toshiba | Mask blank and method of producing mask |
JPH11345763A (ja) * | 1998-06-02 | 1999-12-14 | Nippon Foundry Inc | 半導体基板の処理装置 |
JP4317613B2 (ja) * | 1999-06-30 | 2009-08-19 | 株式会社エムテーシー | 基板保持装置 |
JP3602419B2 (ja) * | 1999-07-23 | 2004-12-15 | 株式会社半導体先端テクノロジーズ | レジスト塗布方法、レジスト塗布装置、マスクパターン形成方法および液晶基板のパターン形成方法 |
US6527860B1 (en) | 1999-10-19 | 2003-03-04 | Tokyo Electron Limited | Substrate processing apparatus |
JP4043163B2 (ja) * | 1999-12-24 | 2008-02-06 | エム・セテック株式会社 | 薬液塗布方法とその装置 |
JP2001228633A (ja) * | 2000-02-17 | 2001-08-24 | Matsushita Electric Ind Co Ltd | ホールパターンの形成方法 |
TWI228755B (en) * | 2000-02-17 | 2005-03-01 | Toshiba Corp | Chemical liquid processing apparatus and the method thereof |
JP3689301B2 (ja) | 2000-03-15 | 2005-08-31 | Hoya株式会社 | フォトマスクブランクの製造方法及び不要膜除去装置 |
US6327793B1 (en) | 2000-03-20 | 2001-12-11 | Silicon Valley Group | Method for two dimensional adaptive process control of critical dimensions during spin coating process |
JP2001274076A (ja) * | 2000-03-28 | 2001-10-05 | Toshiba Corp | マーク検出方法、露光方法及びパターン検査方法 |
EP1143300A1 (de) | 2000-04-03 | 2001-10-10 | Shipley Company LLC | Photoresistzusammensetzungen und ihre Verwendung |
JP2001305713A (ja) | 2000-04-25 | 2001-11-02 | Shin Etsu Chem Co Ltd | フォトマスク用ブランクス及びフォトマスク |
JP3712047B2 (ja) | 2000-08-14 | 2005-11-02 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP3768786B2 (ja) | 2000-08-15 | 2006-04-19 | 株式会社ルネサステクノロジ | ホトマスクの製造方法、ホトマスクブランクスの製造方法およびホトマスクの再生方法 |
JP2002090978A (ja) * | 2000-09-12 | 2002-03-27 | Hoya Corp | 位相シフトマスクブランクの製造方法、及び位相シフトマスクブランクの製造装置 |
JP3914386B2 (ja) | 2000-12-28 | 2007-05-16 | 株式会社ルネサステクノロジ | フォトマスク、その製造方法、パターン形成方法および半導体装置の製造方法 |
JP2002357905A (ja) * | 2001-03-28 | 2002-12-13 | Sumitomo Chem Co Ltd | レジスト組成物 |
JP3642316B2 (ja) * | 2001-06-15 | 2005-04-27 | 日本電気株式会社 | 化学増幅レジスト用単量体、化学増幅レジスト用重合体、化学増幅レジスト組成物、パターン形成方法 |
KR100894244B1 (ko) * | 2001-07-13 | 2009-04-20 | 교와 핫꼬 케미칼 가부시키가이샤 | 에테르 화합물의 제조법 |
TW591341B (en) | 2001-09-26 | 2004-06-11 | Shipley Co Llc | Coating compositions for use with an overcoated photoresist |
JP3607903B2 (ja) * | 2001-09-28 | 2005-01-05 | Hoya株式会社 | マスクブランク、不要膜除去方法及びその装置、並びにマスクブランク及びマスクの製造方法 |
WO2003077570A1 (en) | 2002-03-12 | 2003-09-18 | Welgate Corp. | Method and device for providing information of unfinished call |
JP4118585B2 (ja) * | 2002-04-03 | 2008-07-16 | Hoya株式会社 | マスクブランクの製造方法 |
JP3973103B2 (ja) * | 2003-03-31 | 2007-09-12 | Hoya株式会社 | マスクブランクスの製造方法 |
JP4029215B2 (ja) | 2004-03-24 | 2008-01-09 | 株式会社村田製作所 | 位相調整回路およびこれを備えた発振器 |
-
2004
- 2004-09-24 CN CNB2004100118724A patent/CN100537053C/zh active Active
- 2004-09-24 CN CN2006101727019A patent/CN1983028B/zh active Active
- 2004-09-24 KR KR1020040077049A patent/KR20050031425A/ko not_active Application Discontinuation
- 2004-09-29 TW TW093129331A patent/TWI387846B/zh active
- 2004-09-29 DE DE102004047355.2A patent/DE102004047355B4/de not_active Expired - Fee Related
- 2004-09-29 TW TW097117082A patent/TWI391779B/zh active
- 2004-09-29 US US10/951,696 patent/US7674561B2/en active Active
-
2007
- 2007-03-30 KR KR1020070031715A patent/KR20070039909A/ko not_active Application Discontinuation
- 2007-03-30 KR KR1020070031697A patent/KR100976977B1/ko active IP Right Grant
-
2008
- 2008-07-07 KR KR1020080065551A patent/KR101047646B1/ko active IP Right Grant
-
2010
- 2010-06-18 KR KR1020100058019A patent/KR101045177B1/ko active IP Right Grant
- 2010-09-22 JP JP2010211759A patent/JP2011040770A/ja active Pending
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2015
- 2015-03-23 JP JP2015059236A patent/JP2015111312A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2011040770A (ja) | 2011-02-24 |
US7674561B2 (en) | 2010-03-09 |
TW200517786A (en) | 2005-06-01 |
KR101045177B1 (ko) | 2011-06-30 |
CN100537053C (zh) | 2009-09-09 |
TWI391779B (zh) | 2013-04-01 |
KR100976977B1 (ko) | 2010-08-23 |
KR20080075816A (ko) | 2008-08-19 |
DE102004047355B4 (de) | 2022-03-10 |
KR20050031425A (ko) | 2005-04-06 |
KR20100085003A (ko) | 2010-07-28 |
KR20070039909A (ko) | 2007-04-13 |
TW200837492A (en) | 2008-09-16 |
JP2015111312A (ja) | 2015-06-18 |
US20050069787A1 (en) | 2005-03-31 |
TWI387846B (zh) | 2013-03-01 |
KR101047646B1 (ko) | 2011-07-07 |
KR20070039908A (ko) | 2007-04-13 |
CN1983028A (zh) | 2007-06-20 |
CN1605397A (zh) | 2005-04-13 |
CN1983028B (zh) | 2012-07-25 |
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