JPS5727999A - Vapor phase growing method for gan - Google Patents

Vapor phase growing method for gan

Info

Publication number
JPS5727999A
JPS5727999A JP9915080A JP9915080A JPS5727999A JP S5727999 A JPS5727999 A JP S5727999A JP 9915080 A JP9915080 A JP 9915080A JP 9915080 A JP9915080 A JP 9915080A JP S5727999 A JPS5727999 A JP S5727999A
Authority
JP
Japan
Prior art keywords
gan
substrates
inlet
temp
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9915080A
Other languages
Japanese (ja)
Inventor
Kiyoshi Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP9915080A priority Critical patent/JPS5727999A/en
Publication of JPS5727999A publication Critical patent/JPS5727999A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To make a grown GaN layer flat even by growth at alow temp. and to dope Zn uniformly by specifying the surface of each sapphire single crystal substrate on which GaN is grown and carrying out a specified pretreatment before introducing gases for growth.
CONSTITUTION: The range of (0001)C face ±2.5° is selected as the surface of each sapphire single crystal substrate 3 placed at the down stream side of a reaction tube 1. To pretreat the substrates 3 gaseous HCl is introduced into the tube 1 while keeping the substrates 3 at a temp. above the growing temp. For example, a Ga melt 2 placed at the upper stream side of the tube 1 and the substrates 3 are set to about 950°C and about 1,050°C, respectively. About 3.5l/min N2 is introduced from an inlet 6, and about 1.5l/min N2 and about 10cc/min gaseous HCl are introduced from an inlet 7. This pretreatment is carried out for about 15min. The melt 2 and the substrates 3 are then set to about 850°C and about 960°C, respectively, and by introducing about 5l/min N2 and about 1.5l/min gaseous NH3 from the inlet 6 and about 1.5l/min N2 and about 10W15cc/min gaseous HCl from the inlet 7, GaN is grown epitaxially.
COPYRIGHT: (C)1982,JPO&Japio
JP9915080A 1980-07-18 1980-07-18 Vapor phase growing method for gan Pending JPS5727999A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9915080A JPS5727999A (en) 1980-07-18 1980-07-18 Vapor phase growing method for gan

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9915080A JPS5727999A (en) 1980-07-18 1980-07-18 Vapor phase growing method for gan

Publications (1)

Publication Number Publication Date
JPS5727999A true JPS5727999A (en) 1982-02-15

Family

ID=14239653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9915080A Pending JPS5727999A (en) 1980-07-18 1980-07-18 Vapor phase growing method for gan

Country Status (1)

Country Link
JP (1) JPS5727999A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6252255B1 (en) * 1998-06-26 2001-06-26 Sharp Kabushiki Kaisha Crystal growth method for nitride semiconductor, nitride light emitting device, and method for producing the same
KR100472630B1 (en) * 2002-08-12 2005-03-10 엘지전자 주식회사 Apparatus for growing multi-substrate of Nitride chemical semiconductor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948793A (en) * 1982-09-13 1984-03-21 株式会社日立メデイコ Image display

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948793A (en) * 1982-09-13 1984-03-21 株式会社日立メデイコ Image display

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6252255B1 (en) * 1998-06-26 2001-06-26 Sharp Kabushiki Kaisha Crystal growth method for nitride semiconductor, nitride light emitting device, and method for producing the same
US6685773B2 (en) 1998-06-26 2004-02-03 Sharp Kabushiki Kaisha Crystal growth method for nitride semiconductor, nitride semiconductor light emitting device, and method for producing the same
KR100472630B1 (en) * 2002-08-12 2005-03-10 엘지전자 주식회사 Apparatus for growing multi-substrate of Nitride chemical semiconductor

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