JPS5727999A - Vapor phase growing method for gan - Google Patents
Vapor phase growing method for ganInfo
- Publication number
- JPS5727999A JPS5727999A JP9915080A JP9915080A JPS5727999A JP S5727999 A JPS5727999 A JP S5727999A JP 9915080 A JP9915080 A JP 9915080A JP 9915080 A JP9915080 A JP 9915080A JP S5727999 A JPS5727999 A JP S5727999A
- Authority
- JP
- Japan
- Prior art keywords
- gan
- substrates
- inlet
- temp
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To make a grown GaN layer flat even by growth at alow temp. and to dope Zn uniformly by specifying the surface of each sapphire single crystal substrate on which GaN is grown and carrying out a specified pretreatment before introducing gases for growth.
CONSTITUTION: The range of (0001)C face ±2.5° is selected as the surface of each sapphire single crystal substrate 3 placed at the down stream side of a reaction tube 1. To pretreat the substrates 3 gaseous HCl is introduced into the tube 1 while keeping the substrates 3 at a temp. above the growing temp. For example, a Ga melt 2 placed at the upper stream side of the tube 1 and the substrates 3 are set to about 950°C and about 1,050°C, respectively. About 3.5l/min N2 is introduced from an inlet 6, and about 1.5l/min N2 and about 10cc/min gaseous HCl are introduced from an inlet 7. This pretreatment is carried out for about 15min. The melt 2 and the substrates 3 are then set to about 850°C and about 960°C, respectively, and by introducing about 5l/min N2 and about 1.5l/min gaseous NH3 from the inlet 6 and about 1.5l/min N2 and about 10W15cc/min gaseous HCl from the inlet 7, GaN is grown epitaxially.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9915080A JPS5727999A (en) | 1980-07-18 | 1980-07-18 | Vapor phase growing method for gan |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9915080A JPS5727999A (en) | 1980-07-18 | 1980-07-18 | Vapor phase growing method for gan |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5727999A true JPS5727999A (en) | 1982-02-15 |
Family
ID=14239653
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9915080A Pending JPS5727999A (en) | 1980-07-18 | 1980-07-18 | Vapor phase growing method for gan |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5727999A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6252255B1 (en) * | 1998-06-26 | 2001-06-26 | Sharp Kabushiki Kaisha | Crystal growth method for nitride semiconductor, nitride light emitting device, and method for producing the same |
KR100472630B1 (en) * | 2002-08-12 | 2005-03-10 | 엘지전자 주식회사 | Apparatus for growing multi-substrate of Nitride chemical semiconductor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5948793A (en) * | 1982-09-13 | 1984-03-21 | 株式会社日立メデイコ | Image display |
-
1980
- 1980-07-18 JP JP9915080A patent/JPS5727999A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5948793A (en) * | 1982-09-13 | 1984-03-21 | 株式会社日立メデイコ | Image display |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6252255B1 (en) * | 1998-06-26 | 2001-06-26 | Sharp Kabushiki Kaisha | Crystal growth method for nitride semiconductor, nitride light emitting device, and method for producing the same |
US6685773B2 (en) | 1998-06-26 | 2004-02-03 | Sharp Kabushiki Kaisha | Crystal growth method for nitride semiconductor, nitride semiconductor light emitting device, and method for producing the same |
KR100472630B1 (en) * | 2002-08-12 | 2005-03-10 | 엘지전자 주식회사 | Apparatus for growing multi-substrate of Nitride chemical semiconductor |
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