JPS55140799A - Gallium nitride crystal growing method - Google Patents

Gallium nitride crystal growing method

Info

Publication number
JPS55140799A
JPS55140799A JP4564179A JP4564179A JPS55140799A JP S55140799 A JPS55140799 A JP S55140799A JP 4564179 A JP4564179 A JP 4564179A JP 4564179 A JP4564179 A JP 4564179A JP S55140799 A JPS55140799 A JP S55140799A
Authority
JP
Japan
Prior art keywords
substrate
boat
growing method
gas
gan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4564179A
Other languages
Japanese (ja)
Other versions
JPS5948793B2 (en
Inventor
Yoshimasa Oki
Yukio Toyoda
Atsuyuki Kobayashi
Isamu Akasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4564179A priority Critical patent/JPS5948793B2/en
Publication of JPS55140799A publication Critical patent/JPS55140799A/en
Publication of JPS5948793B2 publication Critical patent/JPS5948793B2/en
Expired legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To grow a uniform GaN crystal of high quality on a sapphire substrate with high reproducibility by heat treating the substrate in a Ga halogenide atomsphere prior to crystal growth.
CONSTITUTION: Sapphire substrate 2 and boat 3 contg. metallic Ga 6 are placed in quartz reaction tube 1. Boat 3 is heated to about 850°C with electric furnace 4, and substrate 2 to about 850°C or above. Purified N2 gas contg. a little HX (X is Cl, Br or I) is introduced from one end 5 of tube 1. The introduced HX gas reacts with Ga 6 in boat 3 to form GaX vapor, which is then carried by N2 gas and activates the surface of substrate 2 to make it fit for GaN growth. By a Ga/HX/NH3/N2 system vapor phase growing method GaN in grown on substrate 2 thus heat treated at about 950°C or above for about 2min or more.
COPYRIGHT: (C)1980,JPO&Japio
JP4564179A 1979-04-13 1979-04-13 Gallium nitride crystal growth method Expired JPS5948793B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4564179A JPS5948793B2 (en) 1979-04-13 1979-04-13 Gallium nitride crystal growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4564179A JPS5948793B2 (en) 1979-04-13 1979-04-13 Gallium nitride crystal growth method

Publications (2)

Publication Number Publication Date
JPS55140799A true JPS55140799A (en) 1980-11-04
JPS5948793B2 JPS5948793B2 (en) 1984-11-28

Family

ID=12724987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4564179A Expired JPS5948793B2 (en) 1979-04-13 1979-04-13 Gallium nitride crystal growth method

Country Status (1)

Country Link
JP (1) JPS5948793B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS627477A (en) * 1985-07-04 1987-01-14 Toyoda Gosei Co Ltd Method for forming pattern to rubber molded product
US9435350B2 (en) 2009-04-07 2016-09-06 Panasonic Intellectual Property Management Co., Ltd. Air blowing device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS627477A (en) * 1985-07-04 1987-01-14 Toyoda Gosei Co Ltd Method for forming pattern to rubber molded product
JPH034266B2 (en) * 1985-07-04 1991-01-22 Toyoda Gosei Kk
US9435350B2 (en) 2009-04-07 2016-09-06 Panasonic Intellectual Property Management Co., Ltd. Air blowing device

Also Published As

Publication number Publication date
JPS5948793B2 (en) 1984-11-28

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