JPS55140799A - Gallium nitride crystal growing method - Google Patents
Gallium nitride crystal growing methodInfo
- Publication number
- JPS55140799A JPS55140799A JP4564179A JP4564179A JPS55140799A JP S55140799 A JPS55140799 A JP S55140799A JP 4564179 A JP4564179 A JP 4564179A JP 4564179 A JP4564179 A JP 4564179A JP S55140799 A JPS55140799 A JP S55140799A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- boat
- growing method
- gas
- gan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To grow a uniform GaN crystal of high quality on a sapphire substrate with high reproducibility by heat treating the substrate in a Ga halogenide atomsphere prior to crystal growth.
CONSTITUTION: Sapphire substrate 2 and boat 3 contg. metallic Ga 6 are placed in quartz reaction tube 1. Boat 3 is heated to about 850°C with electric furnace 4, and substrate 2 to about 850°C or above. Purified N2 gas contg. a little HX (X is Cl, Br or I) is introduced from one end 5 of tube 1. The introduced HX gas reacts with Ga 6 in boat 3 to form GaX vapor, which is then carried by N2 gas and activates the surface of substrate 2 to make it fit for GaN growth. By a Ga/HX/NH3/N2 system vapor phase growing method GaN in grown on substrate 2 thus heat treated at about 950°C or above for about 2min or more.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4564179A JPS5948793B2 (en) | 1979-04-13 | 1979-04-13 | Gallium nitride crystal growth method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4564179A JPS5948793B2 (en) | 1979-04-13 | 1979-04-13 | Gallium nitride crystal growth method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55140799A true JPS55140799A (en) | 1980-11-04 |
JPS5948793B2 JPS5948793B2 (en) | 1984-11-28 |
Family
ID=12724987
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4564179A Expired JPS5948793B2 (en) | 1979-04-13 | 1979-04-13 | Gallium nitride crystal growth method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5948793B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS627477A (en) * | 1985-07-04 | 1987-01-14 | Toyoda Gosei Co Ltd | Method for forming pattern to rubber molded product |
US9435350B2 (en) | 2009-04-07 | 2016-09-06 | Panasonic Intellectual Property Management Co., Ltd. | Air blowing device |
-
1979
- 1979-04-13 JP JP4564179A patent/JPS5948793B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS627477A (en) * | 1985-07-04 | 1987-01-14 | Toyoda Gosei Co Ltd | Method for forming pattern to rubber molded product |
JPH034266B2 (en) * | 1985-07-04 | 1991-01-22 | Toyoda Gosei Kk | |
US9435350B2 (en) | 2009-04-07 | 2016-09-06 | Panasonic Intellectual Property Management Co., Ltd. | Air blowing device |
Also Published As
Publication number | Publication date |
---|---|
JPS5948793B2 (en) | 1984-11-28 |
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