JPS5591817A - Vapor phase epitaxial growth method - Google Patents
Vapor phase epitaxial growth methodInfo
- Publication number
- JPS5591817A JPS5591817A JP16479378A JP16479378A JPS5591817A JP S5591817 A JPS5591817 A JP S5591817A JP 16479378 A JP16479378 A JP 16479378A JP 16479378 A JP16479378 A JP 16479378A JP S5591817 A JPS5591817 A JP S5591817A
- Authority
- JP
- Japan
- Prior art keywords
- purity
- impurity
- epitaxial growth
- buffer layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To maintain purity of a buffer layer, in the process of forming a multilayer epitaxial growth layer by allowing a high-purity buffer layer and an active layer of high-impurity-concentration on a crystal growth substrate, by arranging a high-purity jig on the crystal growth substrate.
CONSTITUTION: A GaAs semi-insulating substrate 3 which contains chromium impurity is installed in a quartz reacting pipe 1. By allowing an epitaxial growth in the condition that a quartz high-purity jig 7A is placed on this semi-insulating substrate keeping such an appropriate distance S as a gap of 0.5mm, a high-purity buffer layer is formed. And then, by removing the quartz jig 7 from the substrate 3 and also by introducing into a reacting pipe 1 sulfur gas, etc. as a source of impurity, a high-impurity-concentration acting layer is formed. It is possible in this manner to prevent adverse effect of the impurity adhered to inside of the reacting pipe 1 at the previous growth process even at the time when the epitaxial growth process is repeated, and therefore, it is always possible to obtain a buffer layer of high purity.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16479378A JPS5591817A (en) | 1978-12-28 | 1978-12-28 | Vapor phase epitaxial growth method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16479378A JPS5591817A (en) | 1978-12-28 | 1978-12-28 | Vapor phase epitaxial growth method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5591817A true JPS5591817A (en) | 1980-07-11 |
JPS5616534B2 JPS5616534B2 (en) | 1981-04-16 |
Family
ID=15800040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16479378A Granted JPS5591817A (en) | 1978-12-28 | 1978-12-28 | Vapor phase epitaxial growth method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5591817A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102618923B (en) * | 2012-04-11 | 2015-09-02 | 浙江金瑞泓科技股份有限公司 | A kind of accurate reduced pressure epitaxy growth method |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4946103A (en) * | 1972-09-14 | 1974-05-02 |
-
1978
- 1978-12-28 JP JP16479378A patent/JPS5591817A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4946103A (en) * | 1972-09-14 | 1974-05-02 |
Also Published As
Publication number | Publication date |
---|---|
JPS5616534B2 (en) | 1981-04-16 |
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