JPS5591817A - Vapor phase epitaxial growth method - Google Patents

Vapor phase epitaxial growth method

Info

Publication number
JPS5591817A
JPS5591817A JP16479378A JP16479378A JPS5591817A JP S5591817 A JPS5591817 A JP S5591817A JP 16479378 A JP16479378 A JP 16479378A JP 16479378 A JP16479378 A JP 16479378A JP S5591817 A JPS5591817 A JP S5591817A
Authority
JP
Japan
Prior art keywords
purity
impurity
epitaxial growth
buffer layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16479378A
Other languages
Japanese (ja)
Other versions
JPS5616534B2 (en
Inventor
Junji Komeno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16479378A priority Critical patent/JPS5591817A/en
Publication of JPS5591817A publication Critical patent/JPS5591817A/en
Publication of JPS5616534B2 publication Critical patent/JPS5616534B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To maintain purity of a buffer layer, in the process of forming a multilayer epitaxial growth layer by allowing a high-purity buffer layer and an active layer of high-impurity-concentration on a crystal growth substrate, by arranging a high-purity jig on the crystal growth substrate.
CONSTITUTION: A GaAs semi-insulating substrate 3 which contains chromium impurity is installed in a quartz reacting pipe 1. By allowing an epitaxial growth in the condition that a quartz high-purity jig 7A is placed on this semi-insulating substrate keeping such an appropriate distance S as a gap of 0.5mm, a high-purity buffer layer is formed. And then, by removing the quartz jig 7 from the substrate 3 and also by introducing into a reacting pipe 1 sulfur gas, etc. as a source of impurity, a high-impurity-concentration acting layer is formed. It is possible in this manner to prevent adverse effect of the impurity adhered to inside of the reacting pipe 1 at the previous growth process even at the time when the epitaxial growth process is repeated, and therefore, it is always possible to obtain a buffer layer of high purity.
COPYRIGHT: (C)1980,JPO&Japio
JP16479378A 1978-12-28 1978-12-28 Vapor phase epitaxial growth method Granted JPS5591817A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16479378A JPS5591817A (en) 1978-12-28 1978-12-28 Vapor phase epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16479378A JPS5591817A (en) 1978-12-28 1978-12-28 Vapor phase epitaxial growth method

Publications (2)

Publication Number Publication Date
JPS5591817A true JPS5591817A (en) 1980-07-11
JPS5616534B2 JPS5616534B2 (en) 1981-04-16

Family

ID=15800040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16479378A Granted JPS5591817A (en) 1978-12-28 1978-12-28 Vapor phase epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS5591817A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102618923B (en) * 2012-04-11 2015-09-02 浙江金瑞泓科技股份有限公司 A kind of accurate reduced pressure epitaxy growth method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946103A (en) * 1972-09-14 1974-05-02

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946103A (en) * 1972-09-14 1974-05-02

Also Published As

Publication number Publication date
JPS5616534B2 (en) 1981-04-16

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