JPS57111016A - Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer - Google Patents
Manufacture of gallium phosphide arsenide mixed crystal epitaxial waferInfo
- Publication number
- JPS57111016A JPS57111016A JP18902280A JP18902280A JPS57111016A JP S57111016 A JPS57111016 A JP S57111016A JP 18902280 A JP18902280 A JP 18902280A JP 18902280 A JP18902280 A JP 18902280A JP S57111016 A JPS57111016 A JP S57111016A
- Authority
- JP
- Japan
- Prior art keywords
- mixed crystal
- gallium phosphide
- phosphide arsenide
- arsenide mixed
- ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To obtain the wafer with extremely uniform thickness without lowering luminous efficiency by making the ratio of galluium as a gas for gaseous phase growth and arsenic and phosphorus proper. CONSTITUTION:A gallium phosphide arsenide mixed crystal rate varying layer, a gallium phosphide arsenide mixed crystal rate fixed layer and a gallium phosphide arsenide mixed crystal rate fixed layer containing an isoelectronic trap are formed successively onto a single crystal substrate through a gaseous phase epitaxial growth method, and the gallium phosphide arsenide mixed crystal epitaxial wafer is manufactured. The ratio (Ga)/(As+P) of the component concentration of gallium as the gas for the gaseous phase growth of the mixed crystal rate fixed layer containing the isoelectronic trap to the component concentration of phosphorus and arsenic is made within a range of 1.5-5 at that time, and the ratio (Ga)/(As+P) is made within a range of 0.3-1 when growing other layers.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18902280A JPS57111016A (en) | 1980-12-26 | 1980-12-26 | Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18902280A JPS57111016A (en) | 1980-12-26 | 1980-12-26 | Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57111016A true JPS57111016A (en) | 1982-07-10 |
JPS6347135B2 JPS6347135B2 (en) | 1988-09-20 |
Family
ID=16233986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18902280A Granted JPS57111016A (en) | 1980-12-26 | 1980-12-26 | Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57111016A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4756792A (en) * | 1985-09-09 | 1988-07-12 | Mitsubishi Monsanto Chemical Co., Ltd. | Method for vapor-phase epitaxial growth of a single crystalline-, gallium arsenide thin film |
-
1980
- 1980-12-26 JP JP18902280A patent/JPS57111016A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4756792A (en) * | 1985-09-09 | 1988-07-12 | Mitsubishi Monsanto Chemical Co., Ltd. | Method for vapor-phase epitaxial growth of a single crystalline-, gallium arsenide thin film |
Also Published As
Publication number | Publication date |
---|---|
JPS6347135B2 (en) | 1988-09-20 |
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