JPS5622700A - Mixed crystal growing method - Google Patents

Mixed crystal growing method

Info

Publication number
JPS5622700A
JPS5622700A JP9574479A JP9574479A JPS5622700A JP S5622700 A JPS5622700 A JP S5622700A JP 9574479 A JP9574479 A JP 9574479A JP 9574479 A JP9574479 A JP 9574479A JP S5622700 A JPS5622700 A JP S5622700A
Authority
JP
Japan
Prior art keywords
gaas
gaalas
layer
substrate
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9574479A
Other languages
Japanese (ja)
Inventor
Yasuo Seki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9574479A priority Critical patent/JPS5622700A/en
Publication of JPS5622700A publication Critical patent/JPS5622700A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To grow a high quality mixed crystal of GaAlAs crystal, etc. by introducing vapor of an organometallic compound of Al in the vapor phase epitaxial growth of GaAs using Ga and AsCl3 as starting materials.
CONSTITUTION: In case of the double heteroepitaxial growth of GaAlAs and GaAs, Ga 12 saturated with As and substrate GaAs 13 are heated to each predetermined temp. By opening valves 2, 3, H2 gas is fed to AsCl3 saturator 9 kept at 0°C at a predetermined flow rate with flow meter 7 to start the epitaxial growth of GaAs on substrate 13. When GaAs of a required thickness is grown, valves 5, 6 are opened to introduce 18 vapor of an Al-contg. compound into reaction tube 11 with flow meter 8 through Al(CH3)3 saturator 10 kept at 25°C. After growing a GaAlAs layer of a predetermined thickness of substrate 13, on the layer a GaAs layer is grown again to grow a GaAlAs-GaAs double heteroepitaxial layer.
COPYRIGHT: (C)1981,JPO&Japio
JP9574479A 1979-07-27 1979-07-27 Mixed crystal growing method Pending JPS5622700A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9574479A JPS5622700A (en) 1979-07-27 1979-07-27 Mixed crystal growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9574479A JPS5622700A (en) 1979-07-27 1979-07-27 Mixed crystal growing method

Publications (1)

Publication Number Publication Date
JPS5622700A true JPS5622700A (en) 1981-03-03

Family

ID=14145992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9574479A Pending JPS5622700A (en) 1979-07-27 1979-07-27 Mixed crystal growing method

Country Status (1)

Country Link
JP (1) JPS5622700A (en)

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