JPS649895A - Method for growing iii-v compound semiconductor crystal on si substrate - Google Patents
Method for growing iii-v compound semiconductor crystal on si substrateInfo
- Publication number
- JPS649895A JPS649895A JP16569487A JP16569487A JPS649895A JP S649895 A JPS649895 A JP S649895A JP 16569487 A JP16569487 A JP 16569487A JP 16569487 A JP16569487 A JP 16569487A JP S649895 A JPS649895 A JP S649895A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- compound semiconductor
- species containing
- semiconductor crystal
- gas species
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To form the titled superconductor crystal, having good crystallinity and capable of selective growth on a substrate, by alternately feeding a gas species containing In chloride and a gas species containing a group V constituent element onto a silicon substrate having a formed mask pattern. CONSTITUTION:An In source boat 12 is placed on the upstream side of a growth chamber 11 in the lower stage and a carrier gas and HCl gas are fed from the upstream side thereof to adsorb the formed In chloride on a silicon substrate 14 having a formed mask pattern. The substrate 14 is then moved to a growth chamber 13 in the upper stage and a gas species containing a group V constituent element is fed and adsorbed on the substrate 14. The above-mentioned operations are alternately repeated to carry out atomic layer epitaxial growth of a III-V compound semiconductor crystal on the substrate 14.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16569487A JPS649895A (en) | 1987-07-01 | 1987-07-01 | Method for growing iii-v compound semiconductor crystal on si substrate |
US07/213,940 US4840921A (en) | 1987-07-01 | 1988-06-30 | Process for the growth of III-V group compound semiconductor crystal on a Si substrate |
EP88305944A EP0297867B1 (en) | 1987-07-01 | 1988-06-30 | A process for the growth of iii-v group compound semiconductor crystal on a si substrate |
DE88305944T DE3884682T2 (en) | 1987-07-01 | 1988-06-30 | Process for growing a III-V group compound semiconductor crystal on a Si substrate. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16569487A JPS649895A (en) | 1987-07-01 | 1987-07-01 | Method for growing iii-v compound semiconductor crystal on si substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS649895A true JPS649895A (en) | 1989-01-13 |
Family
ID=15817270
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16569487A Pending JPS649895A (en) | 1987-07-01 | 1987-07-01 | Method for growing iii-v compound semiconductor crystal on si substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS649895A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5184539A (en) * | 1991-12-02 | 1993-02-09 | Meito Corporation | Fryer |
-
1987
- 1987-07-01 JP JP16569487A patent/JPS649895A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5184539A (en) * | 1991-12-02 | 1993-02-09 | Meito Corporation | Fryer |
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