JPS649895A - Method for growing iii-v compound semiconductor crystal on si substrate - Google Patents

Method for growing iii-v compound semiconductor crystal on si substrate

Info

Publication number
JPS649895A
JPS649895A JP16569487A JP16569487A JPS649895A JP S649895 A JPS649895 A JP S649895A JP 16569487 A JP16569487 A JP 16569487A JP 16569487 A JP16569487 A JP 16569487A JP S649895 A JPS649895 A JP S649895A
Authority
JP
Japan
Prior art keywords
substrate
compound semiconductor
species containing
semiconductor crystal
gas species
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16569487A
Other languages
Japanese (ja)
Inventor
Taku Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP16569487A priority Critical patent/JPS649895A/en
Priority to US07/213,940 priority patent/US4840921A/en
Priority to EP88305944A priority patent/EP0297867B1/en
Priority to DE88305944T priority patent/DE3884682T2/en
Publication of JPS649895A publication Critical patent/JPS649895A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To form the titled superconductor crystal, having good crystallinity and capable of selective growth on a substrate, by alternately feeding a gas species containing In chloride and a gas species containing a group V constituent element onto a silicon substrate having a formed mask pattern. CONSTITUTION:An In source boat 12 is placed on the upstream side of a growth chamber 11 in the lower stage and a carrier gas and HCl gas are fed from the upstream side thereof to adsorb the formed In chloride on a silicon substrate 14 having a formed mask pattern. The substrate 14 is then moved to a growth chamber 13 in the upper stage and a gas species containing a group V constituent element is fed and adsorbed on the substrate 14. The above-mentioned operations are alternately repeated to carry out atomic layer epitaxial growth of a III-V compound semiconductor crystal on the substrate 14.
JP16569487A 1987-07-01 1987-07-01 Method for growing iii-v compound semiconductor crystal on si substrate Pending JPS649895A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP16569487A JPS649895A (en) 1987-07-01 1987-07-01 Method for growing iii-v compound semiconductor crystal on si substrate
US07/213,940 US4840921A (en) 1987-07-01 1988-06-30 Process for the growth of III-V group compound semiconductor crystal on a Si substrate
EP88305944A EP0297867B1 (en) 1987-07-01 1988-06-30 A process for the growth of iii-v group compound semiconductor crystal on a si substrate
DE88305944T DE3884682T2 (en) 1987-07-01 1988-06-30 Process for growing a III-V group compound semiconductor crystal on a Si substrate.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16569487A JPS649895A (en) 1987-07-01 1987-07-01 Method for growing iii-v compound semiconductor crystal on si substrate

Publications (1)

Publication Number Publication Date
JPS649895A true JPS649895A (en) 1989-01-13

Family

ID=15817270

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16569487A Pending JPS649895A (en) 1987-07-01 1987-07-01 Method for growing iii-v compound semiconductor crystal on si substrate

Country Status (1)

Country Link
JP (1) JPS649895A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5184539A (en) * 1991-12-02 1993-02-09 Meito Corporation Fryer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5184539A (en) * 1991-12-02 1993-02-09 Meito Corporation Fryer

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