JPS5469062A - Vapor growth method for magnespinel - Google Patents

Vapor growth method for magnespinel

Info

Publication number
JPS5469062A
JPS5469062A JP13562777A JP13562777A JPS5469062A JP S5469062 A JPS5469062 A JP S5469062A JP 13562777 A JP13562777 A JP 13562777A JP 13562777 A JP13562777 A JP 13562777A JP S5469062 A JPS5469062 A JP S5469062A
Authority
JP
Japan
Prior art keywords
flow path
gas
vapor
magnespinel
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13562777A
Other languages
Japanese (ja)
Other versions
JPS5931985B2 (en
Inventor
Akira Osawa
Masaru Ihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13562777A priority Critical patent/JPS5931985B2/en
Publication of JPS5469062A publication Critical patent/JPS5469062A/en
Publication of JPS5931985B2 publication Critical patent/JPS5931985B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To manufacture the SOS device by growing the magnespinel via the liquid phase not by the vapor phase.
CONSTITUTION: The normal-temperature HCl has flowing the 1st flow path is introduced (4) to high-purity Al6c kept at 500W640°C in order to secure a contact to each other. Then H2 or the like is flowed to the 2nd flow path which is partitioned to avoid mixture with the HCl gas, and the heated vapor of Mg6b is carried. The CO2 gas is introduced (14) and mixed to the Mg vapor of the 2nd flow path as well as to the reaction gas of the 1st flow path and then sent toward subsftrate 10. The Si substrate 9 is kept at 1000W1270°C via board 9 of Mo or the like on quartz substrate 15 and then given a contact with the mixture gas. The growing (MgO) x (Al2O3)1 features more approximate linear expansion coefficient to Si than the sapphire, and the grid mismatching rate is reduced down to about 1/8 featuring the same cubic group as Si. Thus, the crystalline strain can be lowered to secure better characteristics.
COPYRIGHT: (C)1979,JPO&Japio
JP13562777A 1977-11-14 1977-11-14 Vapor phase growth method of magnespinel Expired JPS5931985B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13562777A JPS5931985B2 (en) 1977-11-14 1977-11-14 Vapor phase growth method of magnespinel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13562777A JPS5931985B2 (en) 1977-11-14 1977-11-14 Vapor phase growth method of magnespinel

Publications (2)

Publication Number Publication Date
JPS5469062A true JPS5469062A (en) 1979-06-02
JPS5931985B2 JPS5931985B2 (en) 1984-08-06

Family

ID=15156216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13562777A Expired JPS5931985B2 (en) 1977-11-14 1977-11-14 Vapor phase growth method of magnespinel

Country Status (1)

Country Link
JP (1) JPS5931985B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5864300A (en) * 1981-10-15 1983-04-16 Nec Corp Manufacture of thin film of aluminum oxide by vapor phase method
US5334250A (en) * 1989-11-02 1994-08-02 Sharp Kabushiki Kaisha Vapor deposition apparatus for using solid starting materials

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5864300A (en) * 1981-10-15 1983-04-16 Nec Corp Manufacture of thin film of aluminum oxide by vapor phase method
US5334250A (en) * 1989-11-02 1994-08-02 Sharp Kabushiki Kaisha Vapor deposition apparatus for using solid starting materials

Also Published As

Publication number Publication date
JPS5931985B2 (en) 1984-08-06

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