JPS5469062A - Vapor growth method for magnespinel - Google Patents
Vapor growth method for magnespinelInfo
- Publication number
- JPS5469062A JPS5469062A JP13562777A JP13562777A JPS5469062A JP S5469062 A JPS5469062 A JP S5469062A JP 13562777 A JP13562777 A JP 13562777A JP 13562777 A JP13562777 A JP 13562777A JP S5469062 A JPS5469062 A JP S5469062A
- Authority
- JP
- Japan
- Prior art keywords
- flow path
- gas
- vapor
- magnespinel
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To manufacture the SOS device by growing the magnespinel via the liquid phase not by the vapor phase.
CONSTITUTION: The normal-temperature HCl has flowing the 1st flow path is introduced (4) to high-purity Al6c kept at 500W640°C in order to secure a contact to each other. Then H2 or the like is flowed to the 2nd flow path which is partitioned to avoid mixture with the HCl gas, and the heated vapor of Mg6b is carried. The CO2 gas is introduced (14) and mixed to the Mg vapor of the 2nd flow path as well as to the reaction gas of the 1st flow path and then sent toward subsftrate 10. The Si substrate 9 is kept at 1000W1270°C via board 9 of Mo or the like on quartz substrate 15 and then given a contact with the mixture gas. The growing (MgO) x (Al2O3)1 features more approximate linear expansion coefficient to Si than the sapphire, and the grid mismatching rate is reduced down to about 1/8 featuring the same cubic group as Si. Thus, the crystalline strain can be lowered to secure better characteristics.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13562777A JPS5931985B2 (en) | 1977-11-14 | 1977-11-14 | Vapor phase growth method of magnespinel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13562777A JPS5931985B2 (en) | 1977-11-14 | 1977-11-14 | Vapor phase growth method of magnespinel |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5469062A true JPS5469062A (en) | 1979-06-02 |
JPS5931985B2 JPS5931985B2 (en) | 1984-08-06 |
Family
ID=15156216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13562777A Expired JPS5931985B2 (en) | 1977-11-14 | 1977-11-14 | Vapor phase growth method of magnespinel |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5931985B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5864300A (en) * | 1981-10-15 | 1983-04-16 | Nec Corp | Manufacture of thin film of aluminum oxide by vapor phase method |
US5334250A (en) * | 1989-11-02 | 1994-08-02 | Sharp Kabushiki Kaisha | Vapor deposition apparatus for using solid starting materials |
-
1977
- 1977-11-14 JP JP13562777A patent/JPS5931985B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5864300A (en) * | 1981-10-15 | 1983-04-16 | Nec Corp | Manufacture of thin film of aluminum oxide by vapor phase method |
US5334250A (en) * | 1989-11-02 | 1994-08-02 | Sharp Kabushiki Kaisha | Vapor deposition apparatus for using solid starting materials |
Also Published As
Publication number | Publication date |
---|---|
JPS5931985B2 (en) | 1984-08-06 |
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