JPS573799A - Vapor phase growing method of compound semiconductor - Google Patents
Vapor phase growing method of compound semiconductorInfo
- Publication number
- JPS573799A JPS573799A JP7738980A JP7738980A JPS573799A JP S573799 A JPS573799 A JP S573799A JP 7738980 A JP7738980 A JP 7738980A JP 7738980 A JP7738980 A JP 7738980A JP S573799 A JPS573799 A JP S573799A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reaction
- gaas
- tube
- carrier gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To set the specific gravity of a carrier gas at an intermediate value between those of He and Ne and mass-produce a uniform wafer at a low cost in the vapor phase growing step of a compound semiconductor, e.g. GaAs, by the disproportionation reaction, by adding an inert gas He to the carrier gas.
CONSTITUTION: A high-frequency induction heating coil 2 is divided into plural parts and provided in the long direction around a horizontal reaction tube 1, and a source holding member 7 is provided in the reaction tube 1. Ga or GaAs metal is placed on the member 7 as a source 8. GaAs substrates 9 and 9' are set in the upper and the lower parts of the reaction tube 1, and AsCl3 or GaCl gas is introduced from a reaction gas introductory tube 3. In this case, a mixed gas containing N2 essentially, a very small amount of H2 and further He is introduced from a tube 4 as a carrier gas for the reaction gas. The specific gravity of the carrier gas is adjusted to an intermediate value between those of He and Ne to reduce the difference between the epitaxial growth rate and the impurity concentration between the plural substrates 9 and 9' provided at the upper and the lower parts of the reaction tube 1. Thus, the epitaxial growing step is carried out by the disproportionation reaction with high productivity to give a semiconductor, e.g. GaAs.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7738980A JPS573799A (en) | 1980-06-09 | 1980-06-09 | Vapor phase growing method of compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7738980A JPS573799A (en) | 1980-06-09 | 1980-06-09 | Vapor phase growing method of compound semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS573799A true JPS573799A (en) | 1982-01-09 |
Family
ID=13632528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7738980A Pending JPS573799A (en) | 1980-06-09 | 1980-06-09 | Vapor phase growing method of compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS573799A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06114119A (en) * | 1992-10-02 | 1994-04-26 | Mitsugi Iwasa | Emergency ladder equipment |
-
1980
- 1980-06-09 JP JP7738980A patent/JPS573799A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06114119A (en) * | 1992-10-02 | 1994-04-26 | Mitsugi Iwasa | Emergency ladder equipment |
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