JPS6425520A - Vapor growth method for compound semiconductor - Google Patents

Abstract

PURPOSE:To simplify a piping system as an MOVPE apparatus and to make it possible to form a semiconductor at a low cost, by mounting a semiconductor substrate in a susceptor without exposing the substrate to a reacting gas stream when reacting gas is changed, sliding the susceptor after the gas stream is stabilized, exposing the semiconductor substrate to the reacting gas, and performing epitaxial growing. CONSTITUTION:Reacting gas flows through a VENT line 13 by way of a three-way valve 12. Only H2 gas is introduced through a line 11. A substrate 2 is set at a substrate holder part 15 of a susceptor 14. The substrate is covered with a susceptor 16 in a fitting manner. Even if the reacting gas is introduced through a line 10 in this state, the material hardly grows on the semiconductor substrate 2. During this period, a mass flow 9 is adjusted to 2.0l/min. The inside of a furnace core tube 8 is kept at constant pressure and gas stream. Thereafter, the susceptor 14 is pushed to the upstream side of the gas stream with a manipulating rod 17. The semiconductor substrate 2 is exposed to the mixed gas of the reacting gas and carrier gas. Thus an excellent epitaxial film is obtained. The periphery of the semiconductor substrate 2 is formed as a planar shape. The upstream sides of the susceptors 14 and 16 in the gas stream are tapered. Thus the disturbance of the gas stream is prevented.