JPS5788099A - Vapor phase growing method for compound semiconductor - Google Patents

Vapor phase growing method for compound semiconductor

Info

Publication number
JPS5788099A
JPS5788099A JP16360180A JP16360180A JPS5788099A JP S5788099 A JPS5788099 A JP S5788099A JP 16360180 A JP16360180 A JP 16360180A JP 16360180 A JP16360180 A JP 16360180A JP S5788099 A JPS5788099 A JP S5788099A
Authority
JP
Japan
Prior art keywords
crystal
substrate
dummy
vapor phase
plates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16360180A
Other languages
Japanese (ja)
Other versions
JPS59480B2 (en
Inventor
Osamu Aoki
Masaharu Nogami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16360180A priority Critical patent/JPS59480B2/en
Publication of JPS5788099A publication Critical patent/JPS5788099A/en
Publication of JPS59480B2 publication Critical patent/JPS59480B2/en
Expired legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain a buffer layer having a uniform thickness on a substrate crystal having arbitrary area and shape with high reproducibility by regulating the distance between the substrate crystal and a crystal for a dummy and placing dummy plates at both sides of the substrate crystal in the direction of a gaseous flow in a growing method using both the crystals set opposite to each other.
CONSTITUTION: A substrate crystal is set opposite to other substrate crystal (a crystal for a dummy) different from or equal to the former crystal in crystal orientation, and a semiconductor of a compound of IIIWV group elements is grown on the former crystal in a vapor phase. At this time, the distance (y) between the crystal substrate 21 and the crystal substrate 22 for the dummy is regulated to ≤10mm, and dummy plates 24 are placed opposite to each other along both sides of the substrate 21 in the upper stream direction of a gaseous flow in a reaction tube 23 so that at least one of the substrates 21, 22 is held between the plates 24.
COPYRIGHT: (C)1982,JPO&Japio
JP16360180A 1980-11-20 1980-11-20 Vapor phase growth method for compound semiconductors Expired JPS59480B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16360180A JPS59480B2 (en) 1980-11-20 1980-11-20 Vapor phase growth method for compound semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16360180A JPS59480B2 (en) 1980-11-20 1980-11-20 Vapor phase growth method for compound semiconductors

Publications (2)

Publication Number Publication Date
JPS5788099A true JPS5788099A (en) 1982-06-01
JPS59480B2 JPS59480B2 (en) 1984-01-06

Family

ID=15777018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16360180A Expired JPS59480B2 (en) 1980-11-20 1980-11-20 Vapor phase growth method for compound semiconductors

Country Status (1)

Country Link
JP (1) JPS59480B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107998A (en) * 1982-12-07 1984-06-22 Fujitsu Ltd Crystal growth method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107998A (en) * 1982-12-07 1984-06-22 Fujitsu Ltd Crystal growth method
JPH039077B2 (en) * 1982-12-07 1991-02-07 Fujitsu Ltd

Also Published As

Publication number Publication date
JPS59480B2 (en) 1984-01-06

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