JPS5788099A - Vapor phase growing method for compound semiconductor - Google Patents
Vapor phase growing method for compound semiconductorInfo
- Publication number
- JPS5788099A JPS5788099A JP16360180A JP16360180A JPS5788099A JP S5788099 A JPS5788099 A JP S5788099A JP 16360180 A JP16360180 A JP 16360180A JP 16360180 A JP16360180 A JP 16360180A JP S5788099 A JPS5788099 A JP S5788099A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- substrate
- dummy
- vapor phase
- plates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain a buffer layer having a uniform thickness on a substrate crystal having arbitrary area and shape with high reproducibility by regulating the distance between the substrate crystal and a crystal for a dummy and placing dummy plates at both sides of the substrate crystal in the direction of a gaseous flow in a growing method using both the crystals set opposite to each other.
CONSTITUTION: A substrate crystal is set opposite to other substrate crystal (a crystal for a dummy) different from or equal to the former crystal in crystal orientation, and a semiconductor of a compound of IIIWV group elements is grown on the former crystal in a vapor phase. At this time, the distance (y) between the crystal substrate 21 and the crystal substrate 22 for the dummy is regulated to ≤10mm, and dummy plates 24 are placed opposite to each other along both sides of the substrate 21 in the upper stream direction of a gaseous flow in a reaction tube 23 so that at least one of the substrates 21, 22 is held between the plates 24.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16360180A JPS59480B2 (en) | 1980-11-20 | 1980-11-20 | Vapor phase growth method for compound semiconductors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16360180A JPS59480B2 (en) | 1980-11-20 | 1980-11-20 | Vapor phase growth method for compound semiconductors |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5788099A true JPS5788099A (en) | 1982-06-01 |
JPS59480B2 JPS59480B2 (en) | 1984-01-06 |
Family
ID=15777018
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16360180A Expired JPS59480B2 (en) | 1980-11-20 | 1980-11-20 | Vapor phase growth method for compound semiconductors |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59480B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59107998A (en) * | 1982-12-07 | 1984-06-22 | Fujitsu Ltd | Crystal growth method |
-
1980
- 1980-11-20 JP JP16360180A patent/JPS59480B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59107998A (en) * | 1982-12-07 | 1984-06-22 | Fujitsu Ltd | Crystal growth method |
JPH039077B2 (en) * | 1982-12-07 | 1991-02-07 | Fujitsu Ltd |
Also Published As
Publication number | Publication date |
---|---|
JPS59480B2 (en) | 1984-01-06 |
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