JPS551137A - Gaseous phase epitaxial breeding of monocrystalline layer of gallium arsenate - Google Patents
Gaseous phase epitaxial breeding of monocrystalline layer of gallium arsenateInfo
- Publication number
- JPS551137A JPS551137A JP7434178A JP7434178A JPS551137A JP S551137 A JPS551137 A JP S551137A JP 7434178 A JP7434178 A JP 7434178A JP 7434178 A JP7434178 A JP 7434178A JP S551137 A JPS551137 A JP S551137A
- Authority
- JP
- Japan
- Prior art keywords
- ascl
- gaseous phase
- introducing
- phase epitaxial
- breeding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To make good reproduction of the gaseous phase epitaxial substrates os GaAs with higher carrier concentration than 1015/cm2 of which substrates the main surface is inclined in 0W5° with (100) surface toward main axis.
CONSTITUTION: A substrate having a surface inclined in 2° with (100) surface is placed on a holder 13, and rotated at 10 rpm. Further, said substrate is etched by introducing 16 refined H2 at 4 lit./min., raising the temperature of ovens 11 and 14 to 860°C and 750°C respectively, and introducing saturated H2 at 10cm3/min. HCl is generated through the process consisting of encasing AsCl3 supplying H2 at 500cm3/ min. to the bubbler 3 kept at 15°C, and introducing AsCl3 into a reaction pipe 5 whose temperature is set to 880°C previously. The H2 containing HCl is led to the surface of Ga in a boat 10 after removing As therefrom with a filter 8. The H2 supplied at 300cm3/min. is saturated with the AsCl3 supplied at 4.2 × 10-6 mol/ min., and introduced 15 into a reactor 9. At this time, Ga/As is set to 0.5W10. In this condition, the good reproduction of a desired epitaxial layer can be made.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7434178A JPS551137A (en) | 1978-06-20 | 1978-06-20 | Gaseous phase epitaxial breeding of monocrystalline layer of gallium arsenate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7434178A JPS551137A (en) | 1978-06-20 | 1978-06-20 | Gaseous phase epitaxial breeding of monocrystalline layer of gallium arsenate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS551137A true JPS551137A (en) | 1980-01-07 |
Family
ID=13544313
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7434178A Pending JPS551137A (en) | 1978-06-20 | 1978-06-20 | Gaseous phase epitaxial breeding of monocrystalline layer of gallium arsenate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS551137A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61261300A (en) * | 1985-05-15 | 1986-11-19 | Mitsubishi Monsanto Chem Co | Single crystal substrate of gallium arsenide |
JPS6291494A (en) * | 1985-10-16 | 1987-04-25 | Res Dev Corp Of Japan | Method and device for growing compound semiconductor single crystal |
-
1978
- 1978-06-20 JP JP7434178A patent/JPS551137A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61261300A (en) * | 1985-05-15 | 1986-11-19 | Mitsubishi Monsanto Chem Co | Single crystal substrate of gallium arsenide |
JPH0465037B2 (en) * | 1985-05-15 | 1992-10-16 | Mitsubishi Kasei Horitetsuku Kk | |
JPS6291494A (en) * | 1985-10-16 | 1987-04-25 | Res Dev Corp Of Japan | Method and device for growing compound semiconductor single crystal |
JPH0319198B2 (en) * | 1985-10-16 | 1991-03-14 | Shingijutsu Jigyodan |
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