JPS56160400A - Growing method for gallium nitride - Google Patents
Growing method for gallium nitrideInfo
- Publication number
- JPS56160400A JPS56160400A JP6016180A JP6016180A JPS56160400A JP S56160400 A JPS56160400 A JP S56160400A JP 6016180 A JP6016180 A JP 6016180A JP 6016180 A JP6016180 A JP 6016180A JP S56160400 A JPS56160400 A JP S56160400A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- gallium
- melt
- tube
- gallium nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To form an epitaxially grown uniform layer on the whole surface of a substrate pulled up from a mixed melt of bismuth and gallium by reacting gallium with ammonia on the free interface of the melt.
CONSTITUTION: The interior of a reaction tube 23 is filled with an atmosphere of an inert gas such as N2, and a quartz crucible 22 holding a mixed melt 21 of bismuth and gallium is set in the tube 23. A substrate 25 is then immersed in the melt 21, and after heating the whole tube 23 to a high temp., ammonia is added to the atmospheric gas. This state is kept for about 10min, and the substrate is pulled up at about 0.5mm/min rate to obtain a gallium nitride crystal having about 10μm thickness on the substrate surface.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6016180A JPS56160400A (en) | 1980-05-06 | 1980-05-06 | Growing method for gallium nitride |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6016180A JPS56160400A (en) | 1980-05-06 | 1980-05-06 | Growing method for gallium nitride |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56160400A true JPS56160400A (en) | 1981-12-10 |
Family
ID=13134145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6016180A Pending JPS56160400A (en) | 1980-05-06 | 1980-05-06 | Growing method for gallium nitride |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56160400A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005064661A1 (en) * | 2003-12-26 | 2005-07-14 | Matsushita Electric Industrial Co., Ltd. | Method for producing group iii nitride crystal, group iii nitride crystal obtained by such method, and group iii nitride substrate using same |
JP2005206403A (en) * | 2004-01-21 | 2005-08-04 | Japan Science & Technology Agency | Method for producing gallium-containing nitride single crystal |
US7250640B2 (en) | 1999-06-09 | 2007-07-31 | Ricoh Company, Ltd. | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate |
JP2007191390A (en) * | 2007-02-01 | 2007-08-02 | Ricoh Co Ltd | Group iii nitride crystal and group iii nitride crystal substrate |
JP2010229031A (en) * | 2010-07-08 | 2010-10-14 | Ricoh Co Ltd | Method of manufacturing group iii nitride substrate and group iii nitride crystal substrate |
JP2011073968A (en) * | 1999-06-09 | 2011-04-14 | Ricoh Co Ltd | Apparatus for producing crystal |
JP2011088822A (en) * | 2011-01-28 | 2011-05-06 | Ricoh Co Ltd | Method for producing group iii nitride crystal |
JP2013129598A (en) * | 2013-03-22 | 2013-07-04 | Ricoh Co Ltd | Method of producing group-iii nitride crystal |
CN117165939A (en) * | 2023-10-30 | 2023-12-05 | 苏州大学 | Equipment and method for preparing nano gallium nitride film |
-
1980
- 1980-05-06 JP JP6016180A patent/JPS56160400A/en active Pending
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011073968A (en) * | 1999-06-09 | 2011-04-14 | Ricoh Co Ltd | Apparatus for producing crystal |
US9869033B2 (en) | 1999-06-09 | 2018-01-16 | Ricoh Company, Ltd. | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate |
US8591647B2 (en) | 1999-06-09 | 2013-11-26 | Ricoh Company, Ltd. | Production of a GaN bulk crystal substrate and a semiconductor device formed thereon |
US7250640B2 (en) | 1999-06-09 | 2007-07-31 | Ricoh Company, Ltd. | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate |
JP2013227221A (en) * | 1999-06-09 | 2013-11-07 | Ricoh Co Ltd | Method for producing crystal of group iii nitride |
US7508003B2 (en) | 1999-06-09 | 2009-03-24 | Ricoh Company, Ltd. | Production of a GaN bulk crystal substrate and a semiconductor device formed thereon |
WO2005064661A1 (en) * | 2003-12-26 | 2005-07-14 | Matsushita Electric Industrial Co., Ltd. | Method for producing group iii nitride crystal, group iii nitride crystal obtained by such method, and group iii nitride substrate using same |
JP4489446B2 (en) * | 2004-01-21 | 2010-06-23 | 独立行政法人科学技術振興機構 | Method for producing gallium-containing nitride single crystal |
WO2005071143A1 (en) * | 2004-01-21 | 2005-08-04 | Japan Science And Technology Agency | Process for producing single crystal of gallium-containing nitride |
JP2005206403A (en) * | 2004-01-21 | 2005-08-04 | Japan Science & Technology Agency | Method for producing gallium-containing nitride single crystal |
JP2007191390A (en) * | 2007-02-01 | 2007-08-02 | Ricoh Co Ltd | Group iii nitride crystal and group iii nitride crystal substrate |
JP2010229031A (en) * | 2010-07-08 | 2010-10-14 | Ricoh Co Ltd | Method of manufacturing group iii nitride substrate and group iii nitride crystal substrate |
JP2011088822A (en) * | 2011-01-28 | 2011-05-06 | Ricoh Co Ltd | Method for producing group iii nitride crystal |
JP2013129598A (en) * | 2013-03-22 | 2013-07-04 | Ricoh Co Ltd | Method of producing group-iii nitride crystal |
CN117165939A (en) * | 2023-10-30 | 2023-12-05 | 苏州大学 | Equipment and method for preparing nano gallium nitride film |
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