JPS56160400A - Growing method for gallium nitride - Google Patents

Growing method for gallium nitride

Info

Publication number
JPS56160400A
JPS56160400A JP6016180A JP6016180A JPS56160400A JP S56160400 A JPS56160400 A JP S56160400A JP 6016180 A JP6016180 A JP 6016180A JP 6016180 A JP6016180 A JP 6016180A JP S56160400 A JPS56160400 A JP S56160400A
Authority
JP
Japan
Prior art keywords
substrate
gallium
melt
tube
gallium nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6016180A
Other languages
Japanese (ja)
Inventor
Yoshimasa Oki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6016180A priority Critical patent/JPS56160400A/en
Publication of JPS56160400A publication Critical patent/JPS56160400A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To form an epitaxially grown uniform layer on the whole surface of a substrate pulled up from a mixed melt of bismuth and gallium by reacting gallium with ammonia on the free interface of the melt.
CONSTITUTION: The interior of a reaction tube 23 is filled with an atmosphere of an inert gas such as N2, and a quartz crucible 22 holding a mixed melt 21 of bismuth and gallium is set in the tube 23. A substrate 25 is then immersed in the melt 21, and after heating the whole tube 23 to a high temp., ammonia is added to the atmospheric gas. This state is kept for about 10min, and the substrate is pulled up at about 0.5mm/min rate to obtain a gallium nitride crystal having about 10μm thickness on the substrate surface.
COPYRIGHT: (C)1981,JPO&Japio
JP6016180A 1980-05-06 1980-05-06 Growing method for gallium nitride Pending JPS56160400A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6016180A JPS56160400A (en) 1980-05-06 1980-05-06 Growing method for gallium nitride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6016180A JPS56160400A (en) 1980-05-06 1980-05-06 Growing method for gallium nitride

Publications (1)

Publication Number Publication Date
JPS56160400A true JPS56160400A (en) 1981-12-10

Family

ID=13134145

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6016180A Pending JPS56160400A (en) 1980-05-06 1980-05-06 Growing method for gallium nitride

Country Status (1)

Country Link
JP (1) JPS56160400A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005064661A1 (en) * 2003-12-26 2005-07-14 Matsushita Electric Industrial Co., Ltd. Method for producing group iii nitride crystal, group iii nitride crystal obtained by such method, and group iii nitride substrate using same
JP2005206403A (en) * 2004-01-21 2005-08-04 Japan Science & Technology Agency Method for producing gallium-containing nitride single crystal
US7250640B2 (en) 1999-06-09 2007-07-31 Ricoh Company, Ltd. Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
JP2007191390A (en) * 2007-02-01 2007-08-02 Ricoh Co Ltd Group iii nitride crystal and group iii nitride crystal substrate
JP2010229031A (en) * 2010-07-08 2010-10-14 Ricoh Co Ltd Method of manufacturing group iii nitride substrate and group iii nitride crystal substrate
JP2011073968A (en) * 1999-06-09 2011-04-14 Ricoh Co Ltd Apparatus for producing crystal
JP2011088822A (en) * 2011-01-28 2011-05-06 Ricoh Co Ltd Method for producing group iii nitride crystal
JP2013129598A (en) * 2013-03-22 2013-07-04 Ricoh Co Ltd Method of producing group-iii nitride crystal
CN117165939A (en) * 2023-10-30 2023-12-05 苏州大学 Equipment and method for preparing nano gallium nitride film

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011073968A (en) * 1999-06-09 2011-04-14 Ricoh Co Ltd Apparatus for producing crystal
US9869033B2 (en) 1999-06-09 2018-01-16 Ricoh Company, Ltd. Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
US8591647B2 (en) 1999-06-09 2013-11-26 Ricoh Company, Ltd. Production of a GaN bulk crystal substrate and a semiconductor device formed thereon
US7250640B2 (en) 1999-06-09 2007-07-31 Ricoh Company, Ltd. Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
JP2013227221A (en) * 1999-06-09 2013-11-07 Ricoh Co Ltd Method for producing crystal of group iii nitride
US7508003B2 (en) 1999-06-09 2009-03-24 Ricoh Company, Ltd. Production of a GaN bulk crystal substrate and a semiconductor device formed thereon
WO2005064661A1 (en) * 2003-12-26 2005-07-14 Matsushita Electric Industrial Co., Ltd. Method for producing group iii nitride crystal, group iii nitride crystal obtained by such method, and group iii nitride substrate using same
JP4489446B2 (en) * 2004-01-21 2010-06-23 独立行政法人科学技術振興機構 Method for producing gallium-containing nitride single crystal
WO2005071143A1 (en) * 2004-01-21 2005-08-04 Japan Science And Technology Agency Process for producing single crystal of gallium-containing nitride
JP2005206403A (en) * 2004-01-21 2005-08-04 Japan Science & Technology Agency Method for producing gallium-containing nitride single crystal
JP2007191390A (en) * 2007-02-01 2007-08-02 Ricoh Co Ltd Group iii nitride crystal and group iii nitride crystal substrate
JP2010229031A (en) * 2010-07-08 2010-10-14 Ricoh Co Ltd Method of manufacturing group iii nitride substrate and group iii nitride crystal substrate
JP2011088822A (en) * 2011-01-28 2011-05-06 Ricoh Co Ltd Method for producing group iii nitride crystal
JP2013129598A (en) * 2013-03-22 2013-07-04 Ricoh Co Ltd Method of producing group-iii nitride crystal
CN117165939A (en) * 2023-10-30 2023-12-05 苏州大学 Equipment and method for preparing nano gallium nitride film

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