JPS5710939A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5710939A JPS5710939A JP8567380A JP8567380A JPS5710939A JP S5710939 A JPS5710939 A JP S5710939A JP 8567380 A JP8567380 A JP 8567380A JP 8567380 A JP8567380 A JP 8567380A JP S5710939 A JPS5710939 A JP S5710939A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- ion injection
- film
- dielectric film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 150000002500 ions Chemical class 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 5
- 238000002347 injection Methods 0.000 abstract 4
- 239000007924 injection Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To anneal an ion injection layer on the surface of a semiconductor substrate uniformly by a method wherein layer rays are absorbed efficiently in a dielectric film formed on the surface of the substrate, and the dielectric film is heated. CONSTITUTION:An ion injection mask layer 5 is formed on the single crystal silicon semiconductor substrate 4, a window 5a is bored where ions are injected selectively, the impurity ions of boron, etc. are injected through the window, and the ion injection layer 6 is made up on the surface of the substrate 4. The mask layer 5 is removed by means of etching, the dielectric film 7 with uniform thickness consisting of a film such as a SiO2 film is built up on the substrate 4, a laser such as a CO2 laser having a wavelength at an absorption peak is irradiated to the dielectric film, the ion injection layer 6 is annealed by the heat and the layer 6 is activated. Accordingly, the optimum condition for annealing is determined by the power of the laser and the thickness of the film 7, and annealing can be uniformalized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8567380A JPS5710939A (en) | 1980-06-24 | 1980-06-24 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8567380A JPS5710939A (en) | 1980-06-24 | 1980-06-24 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5710939A true JPS5710939A (en) | 1982-01-20 |
Family
ID=13865337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8567380A Pending JPS5710939A (en) | 1980-06-24 | 1980-06-24 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5710939A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5911622A (en) * | 1982-07-13 | 1984-01-21 | Ushio Inc | Heating method |
| EP0432612A3 (en) * | 1989-12-09 | 1994-07-20 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Process for profiling the charge carriers life-time in a semiconductor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5510974A (en) * | 1978-07-12 | 1980-01-25 | Tomy Kogyo Co | Electric circuit switchgear of motor for luminous body movement support frame in game played by projecting shade of luminous body to screen and its baseball game |
-
1980
- 1980-06-24 JP JP8567380A patent/JPS5710939A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5510974A (en) * | 1978-07-12 | 1980-01-25 | Tomy Kogyo Co | Electric circuit switchgear of motor for luminous body movement support frame in game played by projecting shade of luminous body to screen and its baseball game |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5911622A (en) * | 1982-07-13 | 1984-01-21 | Ushio Inc | Heating method |
| EP0432612A3 (en) * | 1989-12-09 | 1994-07-20 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Process for profiling the charge carriers life-time in a semiconductor |
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