JPS55127016A - Manufacturing of semiconductor device - Google Patents

Manufacturing of semiconductor device

Info

Publication number
JPS55127016A
JPS55127016A JP3442579A JP3442579A JPS55127016A JP S55127016 A JPS55127016 A JP S55127016A JP 3442579 A JP3442579 A JP 3442579A JP 3442579 A JP3442579 A JP 3442579A JP S55127016 A JPS55127016 A JP S55127016A
Authority
JP
Japan
Prior art keywords
substrate
impurity
solution
disc
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3442579A
Other languages
Japanese (ja)
Inventor
Masao Tamura
Nobuyoshi Kashu
Masanobu Miyao
Osamu Okura
Takashi Tokuyama
Yoshitomo Sasaki
Kazuo Ito
Masayoshi Saito
Tomokuni Mitsuishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3442579A priority Critical patent/JPS55127016A/en
Publication of JPS55127016A publication Critical patent/JPS55127016A/en
Pending legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To effect the accurate control of impurity atom concentration and profile with simple processes by a method wherein a thin layer containing impurity is formed on the surface of the semiconductor substrate by use of the solution including the impurity to be doped, and the impurity is diffused into the substrate by irradiating the laser beam thereon.
CONSTITUTION: When a Si substrate 1 is immersed into solution 4 containing impurity upon the rotation of a disc 3, the solution 4 contacts with the surface of the substrate 1 and adheres thereon. In this occasion, as the substrate 1 is rotated, the solution layer formed on the surface of the substrate 1 becomes very thin and uniform. When the disc 3 is further rotated and the substrate 1 including the thin layer thereon reaches to the predetermined position, the rotation is stopped and then laser beam 5 is irradiated on the substrate 1. After irradiating the laser beam, the disc 3 and the substrate 1 are rotated again, and the above process is repeated successively. By so doing, it becomes possible to effect the accurate control of impurity atom concentration and profile with simple processes.
COPYRIGHT: (C)1980,JPO&Japio
JP3442579A 1979-03-26 1979-03-26 Manufacturing of semiconductor device Pending JPS55127016A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3442579A JPS55127016A (en) 1979-03-26 1979-03-26 Manufacturing of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3442579A JPS55127016A (en) 1979-03-26 1979-03-26 Manufacturing of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55127016A true JPS55127016A (en) 1980-10-01

Family

ID=12413846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3442579A Pending JPS55127016A (en) 1979-03-26 1979-03-26 Manufacturing of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55127016A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61179578A (en) * 1984-09-28 1986-08-12 テキサス　インスツルメンツ　インコ−ポレイテツド Making of field effect transistor
US4666557A (en) * 1984-12-10 1987-05-19 Ncr Corporation Method for forming channel stops in vertical semiconductor surfaces
JPS62226671A (en) * 1986-03-24 1987-10-05 エバラ　ソーラー　インコーポレイテッド Formation of semiconductor junction
JPS63169024A (en) * 1987-01-05 1988-07-13 Nec Corp Impurity doping method
CN101996870A (en) * 2009-08-07 2011-03-30 索尼公司 Doping method and method for manufacturing semiconductor device
JP2016201492A (en) * 2015-04-13 2016-12-01 富士電機株式会社 Impurity introduction device, impurity introduction method and manufacturing method of semiconductor element

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61179578A (en) * 1984-09-28 1986-08-12 テキサス　インスツルメンツ　インコ−ポレイテツド Making of field effect transistor
US4666557A (en) * 1984-12-10 1987-05-19 Ncr Corporation Method for forming channel stops in vertical semiconductor surfaces
JPS62226671A (en) * 1986-03-24 1987-10-05 エバラ　ソーラー　インコーポレイテッド Formation of semiconductor junction
JPS63169024A (en) * 1987-01-05 1988-07-13 Nec Corp Impurity doping method
CN101996870A (en) * 2009-08-07 2011-03-30 索尼公司 Doping method and method for manufacturing semiconductor device
JP2016201492A (en) * 2015-04-13 2016-12-01 富士電機株式会社 Impurity introduction device, impurity introduction method and manufacturing method of semiconductor element

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