JPS55111170A - Method of manufacturing semiconductor device - Google Patents
Method of manufacturing semiconductor deviceInfo
- Publication number
- JPS55111170A JPS55111170A JP1882979A JP1882979A JPS55111170A JP S55111170 A JPS55111170 A JP S55111170A JP 1882979 A JP1882979 A JP 1882979A JP 1882979 A JP1882979 A JP 1882979A JP S55111170 A JPS55111170 A JP S55111170A
- Authority
- JP
- Japan
- Prior art keywords
- silicon layer
- polycrystalline silicon
- impurity
- laser light
- metal film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To provide a source and a drain regions with a small junction depth without causing the exfoliation of polycrystalline silicon, by irradiating laser light for heat treatment as a polycrystalline silicon layer is coated with a metal film.
CONSTITUTION: A thick field insulating film 2, a gate insulating film 3 and polycrystalline silicon layer 4 doped with an impurity and provided on a semiconductor substrate 1. A metal film 5 of aluminum or the like is coated all over the polycrystalline silicon layer 4. Etching is performed for gate electrode wiring work. Ions of an impurity (such as arsenic) inverse in electroconductive type to the substrate 1 are injected into a source and a drain regions 7. Laser light 8 is irradiated to activate the injected impurity. Since the entry of the laser light 8 into the polycrystalline silicon layer 4 is prevented by the metal film 5 provided on the silicon layer 4 and having a high reflexibility, exfoliation due to overheating is preventd. A junction depth of 0.1μm or less can be set by applying injection energy of 50keV or less.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1882979A JPS55111170A (en) | 1979-02-20 | 1979-02-20 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1882979A JPS55111170A (en) | 1979-02-20 | 1979-02-20 | Method of manufacturing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55111170A true JPS55111170A (en) | 1980-08-27 |
Family
ID=11982446
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1882979A Pending JPS55111170A (en) | 1979-02-20 | 1979-02-20 | Method of manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55111170A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5621367A (en) * | 1979-07-27 | 1981-02-27 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5810831A (en) * | 1981-07-14 | 1983-01-21 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5842273A (en) * | 1981-09-07 | 1983-03-11 | Nec Corp | Manufacture of semiconductor device |
US5474940A (en) * | 1992-01-08 | 1995-12-12 | Sony Corporation | Method of fabricating a semiconductor device having shallow junctions in source-drain regions and a gate electrode with a low resistance silicide layer |
-
1979
- 1979-02-20 JP JP1882979A patent/JPS55111170A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5621367A (en) * | 1979-07-27 | 1981-02-27 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5810831A (en) * | 1981-07-14 | 1983-01-21 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH035057B2 (en) * | 1981-07-14 | 1991-01-24 | Fujitsu Ltd | |
JPS5842273A (en) * | 1981-09-07 | 1983-03-11 | Nec Corp | Manufacture of semiconductor device |
US5474940A (en) * | 1992-01-08 | 1995-12-12 | Sony Corporation | Method of fabricating a semiconductor device having shallow junctions in source-drain regions and a gate electrode with a low resistance silicide layer |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS56115525A (en) | Manufacture of semiconductor device | |
JPS5530846A (en) | Method for manufacturing fixed memory | |
JPS5567132A (en) | Method for manufacturing semiconductor device | |
JPS57196573A (en) | Manufacture of mos type semiconductor device | |
JPS55111170A (en) | Method of manufacturing semiconductor device | |
JPS5623781A (en) | Semiconductor device | |
JPS5585068A (en) | Preparation of semiconductor device | |
JPS5635434A (en) | Manufacturing of semiconductor device | |
JPS633447B2 (en) | ||
JPH0466379B2 (en) | ||
JPS5721824A (en) | Manufacture of semiconductor device | |
JPS5687364A (en) | Semiconductor device | |
JPS5552262A (en) | Mos semiconductor device | |
JPS55158680A (en) | Solar cell and manufacture thereof | |
JPS5511307A (en) | Method of manufacturing semiconductor integrated circuit | |
JPS5780768A (en) | Semiconductor device | |
JPS5710939A (en) | Manufacture of semiconductor device | |
JPS57138178A (en) | Field-defect semiconductor device | |
JPS5538082A (en) | Formation for buried layer of semiconductor device | |
JPS54134579A (en) | Mis semiconductor device | |
JPS54114081A (en) | Semiconductor integrated circuit device | |
JPS55102271A (en) | Method of fabricating semiconductor device | |
JPS5448182A (en) | Semiconductor integrated circuit device | |
JPS57136372A (en) | Manufacture of mos type field effect semiconductor device | |
JPS5445582A (en) | Manufacture for semiconductor device |