JPS5723232A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5723232A JPS5723232A JP9839980A JP9839980A JPS5723232A JP S5723232 A JPS5723232 A JP S5723232A JP 9839980 A JP9839980 A JP 9839980A JP 9839980 A JP9839980 A JP 9839980A JP S5723232 A JPS5723232 A JP S5723232A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- type layers
- heat
- irradiated
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 6
- 238000000137 annealing Methods 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000002349 favourable effect Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To simplify annealing of the reverse conductive layer of a semiconductor device by a method wherein ion implantation is performed selectively in a substrate through an insulating film to provide the reverse conductive layer, and an infrared laser beam is irradiated from the back of the substrate to heat the insulating film. CONSTITUTION:Ion implantation is performed on the P type Si substrate 1 through the gate oxide film 3 making a gate electrode 5 as a mask to form N type layers 6, 7. Then CO2 laser beam of 10.6mum wave length is irradiated from the back of the substrate 1 to heat the oxide film 3 through the substrate, and the adjoining N type layers 6, 7 are annealed by heat conduction. By this constitution, because the substrate is not heated on the whole, rediffusion of impurity in the N type layers 6, 7 is not generated, channel length in accordance with the design can be obtained easily, and annealing process can be simplified. After then it is covered with traditional PSG, and when an opening is formed and an electrode is provided, the device having favorable characteristic can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9839980A JPS5723232A (en) | 1980-07-18 | 1980-07-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9839980A JPS5723232A (en) | 1980-07-18 | 1980-07-18 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5723232A true JPS5723232A (en) | 1982-02-06 |
Family
ID=14218751
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9839980A Pending JPS5723232A (en) | 1980-07-18 | 1980-07-18 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5723232A (en) |
-
1980
- 1980-07-18 JP JP9839980A patent/JPS5723232A/en active Pending
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