JPS5911622A - Heating method - Google Patents
Heating methodInfo
- Publication number
- JPS5911622A JPS5911622A JP12052782A JP12052782A JPS5911622A JP S5911622 A JPS5911622 A JP S5911622A JP 12052782 A JP12052782 A JP 12052782A JP 12052782 A JP12052782 A JP 12052782A JP S5911622 A JPS5911622 A JP S5911622A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- light
- psg
- molecular state
- carbon dioxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims description 9
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 229910002092 carbon dioxide Inorganic materials 0.000 claims abstract description 10
- 239000001569 carbon dioxide Substances 0.000 claims abstract description 10
- 230000007704 transition Effects 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 239000005365 phosphate glass Substances 0.000 abstract 4
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000003245 working effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 31
- 230000000694 effects Effects 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【発明の詳細な説明】 本発明は半導体ウェハーの加熱方法に関する。[Detailed description of the invention] The present invention relates to a method of heating a semiconductor wafer.
半導体ウェハー、例えばシリコンウェハーの基板を使っ
てＩ、ＳＩなどを生産する場合、その基板は、生産工程
の途中で種々の目的をもって加熱される。When producing I, SI, etc. using a substrate of a semiconductor wafer, for example a silicon wafer, the substrate is heated for various purposes during the production process.
例えば、不純物の深部拡散、電気活性化、アニール、保
膿膜や絶縁膜の形成等々であり、種々の加熱方法、加熱
条件の研究が盛んにおこなわれている。この加熱の多く
は半導体ウエノ・−の全域を昇温させるものであるが、
できれば、半導体ウエノ・−の一部分、指定された所定
区域のみ昇温させて加熱処理したい場合も多い。For example, deep diffusion of impurities, electrical activation, annealing, formation of a purulent retention film or an insulating film, etc., and various heating methods and heating conditions are being actively researched. Most of this heating is to raise the temperature of the entire area of the semiconductor wafer.
If possible, it is often desired to perform heat treatment by raising the temperature of only a portion of the semiconductor wafer, a designated predetermined area.
上記のように指定された所定区域のみ加熱したい場合、
従来は、所定区域に指向するよう制御された細い電子線
ビーム、レーザービームを照射することによって行なわ
れるが、「位置合せ」が非常に難かしい欠点がある。If you want to heat only the specified area as above,
Conventionally, this has been done by irradiating a narrow electron beam or laser beam that is controlled to be directed to a predetermined area, but this has the disadvantage that "alignment" is extremely difficult.
本発明は、所定区域のみ加熱するための加熱方法であっ
て、位置合せが極めて簡単であり、作業性、生産性の点
でも非常にすぐれた新規な加熱方法を提供することを目
的としており、その特徴は、ガリウム、ガリウム砒素、
ゲルマニウム、シリコン等の、９７１ｍ〜１１μｍの波
長の光を透す材料を基板とした半導体ウエノ・−の表面
の所定区域に、リン系ガラスＰＳＧのように、９μｍ〜
１１μｍの波長の光をよく吸入する膜を設け、
炭酸ガスレーザーにおける炭酸ガスの分子状態の遷移Σ
言（００°１）→Σ；（１０°０）もしくはΣ′、（ｏ
ｏｏｌ）→Σ；（０２°０）から放出される光を照射す
ることによって前記膜を昇温せしめ、前記半導体ウェハ
ーの６所定区域を選択的に加熱することにある。The present invention aims to provide a novel heating method for heating only a predetermined area, which is extremely easy to align, and has excellent workability and productivity. Its characteristics are gallium, gallium arsenide,
A semiconductor substrate made of a material such as germanium or silicon that transmits light with a wavelength of 971 m to 11 μm is applied to a predetermined area on the surface of a semiconductor wafer having a wavelength of 9 μm to 11 μm, such as phosphorous glass PSG.
A film that absorbs light with a wavelength of 11 μm is installed to detect the transition Σ of the molecular state of carbon dioxide gas in a carbon dioxide laser.
(00°1) → Σ; (10°0) or Σ′, (o
The method involves raising the temperature of the film by irradiating it with light emitted from oool)→Σ;(02°0), thereby selectively heating six predetermined areas of the semiconductor wafer.
以下図面を参照しながら本発明の一実施例を説明する。An embodiment of the present invention will be described below with reference to the drawings.
図において、１は、直径１０ｃｒｎの大ビームで光全放
射する炭酸ガスレーザー、２はその電源であシ、ビーム
の正面には最大直径４インチ級のシリコンウェハー３を
配置する。ウェハー３は、ウェハ一台４に植立されたピ
ン４α上に配置され、ウェハ一台４やピン４αの昇温に
よるウェハー３への悪影響はできるだけさけるよう配慮
しである。ウェハー３の表面には、マスキングを利用し
て所定の区域のみリン系ガラスＰＳＧを蒸着してあり、
この蒸着膜の厚みは大体１．２μｍである。In the figure, 1 is a carbon dioxide laser that emits all light with a large beam with a diameter of 10 crn, 2 is its power source, and a silicon wafer 3 with a maximum diameter of 4 inches is placed in front of the beam. The wafers 3 are placed on pins 4α planted on each wafer 4, and care is taken to avoid adverse effects on the wafers 3 due to temperature rise of the wafers 4 and the pins 4α as much as possible. On the surface of the wafer 3, phosphorus glass PSG is deposited only in predetermined areas using masking.
The thickness of this deposited film is approximately 1.2 μm.
上記炭酸ガスレーザーからは、発振条件を変えてやれば
、分子状態Σ言（００°１）から分子状態Σ；（１ｏ０
ｏ）への遷移によって生ずる、中心波長１０，６μｍ及
びその近傍の光を放出させたり、分子状態Σ言（００°
１）から分子状態Σ；（０２°０）への遷移によって生
ずる、中心波長９．６μｍ及びその近傍の光を放出させ
たりすることができ、上記状態で、炭酸ガスレーザーを
１０４Ｗ で約１秒間発振させ、シリコンウェハー上で
の１０．６μｍ及びその近傍の光の照射強度を約８０Ｗ
／−にすると、上記ＰＳＧは約１０００ ｔＺ’程にな
り、ＰＳＧとシリコンウェハーの面接触を通しての伝熱
でＰＳＧ膜でお＼われている所定の部分のみ数秒間約９
００Ｃに昇温できる。当然ガから、１回の発振照射で前
記温度に昇温させても良いし、２回以上の連発の発振照
射でも良い。ところで、ウェハー ゛は、所定の区
域以外も前記強度の光を受けるが、幸なことにシリコン
ウェハーは、９μｍ〜１１μｍの光を透過してしまうの
で殆んど昇温しない。したがって、ウェハ一台の方が上
記強度の光を受けることになるから、適度に遠ざけるか
もしくは冷却機構つきの方が良い場合がある。簡単には
、表面４ｂを球状もしくは粗面の反射面としておき、受
けた光が散乱されるようにしておく。From the above carbon dioxide laser, by changing the oscillation conditions, the molecular state Σ (00°1) can be changed from the molecular state Σ; (1o0
o), emitting light with a center wavelength of 10.6 μm and its vicinity, or changing the molecular state Σ(00°
It is possible to emit light with a center wavelength of 9.6 μm and its vicinity, which is generated by the transition from 1) to the molecular state Σ; (02°0). oscillate, and the irradiation intensity of light at 10.6 μm and its vicinity on the silicon wafer is approximately 80 W.
/-, the above-mentioned PSG becomes about 1000 tZ', and heat transfer through surface contact between the PSG and the silicon wafer causes only the predetermined portion covered with the PSG film to heat for several seconds at about 9 tZ'.
The temperature can be raised to 00C. Naturally, the temperature may be raised to the above temperature by one oscillation irradiation, or two or more consecutive oscillation irradiations may be performed. Incidentally, the wafer receives the above-mentioned intensity of light in areas other than the predetermined areas, but fortunately, silicon wafers transmit light of 9 μm to 11 μm, so the temperature hardly rises. Therefore, since a single wafer receives the above-mentioned intensity of light, it may be better to keep the wafer away from the wafer or to provide a cooling mechanism. Simply, the surface 4b is made into a spherical or rough reflecting surface so that the received light is scattered.
上記の局所的加熱方法は、炭酸ガスレーザーから放射さ
れる１０．６μｍ及びその近傍の波長の光を、処理すべ
き半導体ウェハーの直径なみにした太き照
なビームで全面随射をするものであるから、局所的に指
定された区域の昇温とは言え、事実上、位置合せ作業は
不要であり、加熱時間も上記の通シ、数秒間程度ででき
るので、生産性、作業性共に著しく高い。また、多少時
間はか＼るが連続発振させたｎ口いビームを、ウェハー
全域を走査させても指定された所定の部分のみ加熱でき
、この場合も、ウェハー全面照射と同様なので正確な位
置合せなどは事実上不要である。The above-mentioned local heating method involves irradiating light with a wavelength of 10.6 μm or around 10.6 μm emitted from a carbon dioxide laser over the entire surface using a thick, bright beam with a diameter equal to the diameter of the semiconductor wafer to be processed. Therefore, even if the temperature is to be raised locally in a designated area, there is virtually no need for positioning work, and the heating time can be completed in just a few seconds, so productivity and work efficiency are significantly improved. expensive. Also, although it takes some time, even if the continuously oscillated n-shaped beam scans the entire wafer, it is possible to heat only a designated area, and in this case, it is the same as irradiating the entire wafer, so accurate alignment is possible. etc. are virtually unnecessary.
ところで上記実施例では、半導体ウエノ・−としてシリ
コンウェハーを示したが、ガリウム、ガリウム砒素、ゲ
ルマニウムなども９μｍ〜１１μｍの波長の光をよく透
過させるので、これらが基板であってもシリコンウェハ
ーの場合と同様な効果が得られる。また加熱光は、当然
ながら９．６μｍ及びその近傍の光でも同様な効果が得
られる。加熱処理が済んだ後のＰＳＧは、そのま＼絶縁
膜や保膿膜として利用しても良いし、不要であれば通常
のエツチング処理により除去しても良い。By the way, in the above embodiment, a silicon wafer is shown as a semiconductor wafer, but gallium, gallium arsenide, germanium, etc. also transmit light with a wavelength of 9 μm to 11 μm well, so even if these are used as a substrate, a silicon wafer can also be used. A similar effect can be obtained. Furthermore, as a matter of course, the same effect can be obtained with heating light having a wavelength of 9.6 μm or around 9.6 μm. After the heat treatment, the PSG may be used as is as an insulating film or a purulent film, or if unnecessary, it may be removed by normal etching.
本発明は以上の実施例の説明からも理解されるように、
ガリウム、ガリウム砒素、ゲルマニウム、シリコンなど
のような半導体ウェハーが、９μｍ〜１１．０ｍの波長
の光をよく透過すること、及びＰＳＧのようなガラスが
逆に９μＦＭ〜１１μｍの波長の光を吸収するところに
着目し、上記半導体ウエノ・−の所定の区域Ｋ ＰＳＧ
の膜を設けておき、炭噛ガスレーザーからの１０．６μ
ｍ及びその近傍の波長の光もしくは９．６μｍ及びその
近傍の光でＰＳＧの膜を加熱し、半導体ウェハーとＰＳ
Ｇの接触面を経由した伝達でウェハーの所定区域を選択
的に、局所的に加熱するものであるから、従来の局所的
加熱方法に比べ著しく生産性が高い。As understood from the description of the above embodiments, the present invention includes:
Semiconductor wafers such as gallium, gallium arsenide, germanium, silicon, etc. transmit light with a wavelength of 9 μm to 11.0 m well, and glasses such as PSG, on the contrary, absorb light with a wavelength of 9 μFM to 11 μm. Focusing on this, a predetermined area K PSG of the semiconductor substrate
A film of 10.6μ from a charcoal gas laser is provided.
The PSG film is heated with light at a wavelength of m and its vicinity, or light at a wavelength of 9.6 μm and its vicinity, and the semiconductor wafer and the PSG film are heated.
Since predetermined areas of the wafer are selectively and locally heated by transmission of G through the contact surface, productivity is significantly higher than conventional local heating methods.
図は本発明加熱方法の一実施例の要部の説明図であって
、１は炭酸ガスレーザー、２は電源、３ハシ’）コンウ
ェハー、４はウェハ一台を示す。The figure is an explanatory view of the main parts of an embodiment of the heating method of the present invention, in which 1 shows a carbon dioxide laser, 2 shows a power source, 3 shows a condensed wafer, and 4 shows one wafer.
Claims (1)
、９μｆｆ１〜１１μｍの波長の光を透す材料を基板と
した半導体ウェハーの表面の所定区域に、リン系ガラス
ＰＳＧのように、９μｍ〜１１μｍの波長の光をよく吸
入する材料の膜を設け、 炭酸ガスレーザーにおける炭酸ガスの分子状態の遷移Σ
：（００°１）→Σ；（１０°０）もしくはΣ：（００
°１）→Σ、（０２°０）から放出される光を照射する
ととによって前記膜を昇温せしめ、前記半導体ウエノ・
−の所定区域を選択的に加熱することを特徴とする半導
体ウェハーの加熱方法。[Claims] In a predetermined area of the surface of a semiconductor wafer whose substrate is a material such as gallium, gallium arsenide, germanium, silicon, etc. that transmits light with a wavelength of 9 μff1 to 11 μm, a 9 μm thick film such as phosphorus glass PSG is applied. A film made of a material that absorbs light with a wavelength of ~11 μm is provided to detect the transition Σ of the molecular state of carbon dioxide gas in a carbon dioxide laser.
:(00°1)→Σ;(10°0) or Σ:(00
By irradiating the light emitted from °1)→Σ, (02°0), the temperature of the film is increased by
- A method for heating a semiconductor wafer, comprising selectively heating a predetermined area of the semiconductor wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12052782A JPS5911622A (en) | 1982-07-13 | 1982-07-13 | Heating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12052782A JPS5911622A (en) | 1982-07-13 | 1982-07-13 | Heating method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5911622A true JPS5911622A (en) | 1984-01-21 |
Family
ID=14788466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12052782A Pending JPS5911622A (en) | 1982-07-13 | 1982-07-13 | Heating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5911622A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5710939A (en) * | 1980-06-24 | 1982-01-20 | Sony Corp | Manufacture of semiconductor device |
-
1982
- 1982-07-13 JP JP12052782A patent/JPS5911622A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5710939A (en) * | 1980-06-24 | 1982-01-20 | Sony Corp | Manufacture of semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2007015388A1 (en) | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus | |
| US6570134B2 (en) | Heat treatment device of the light irradiation type and heat treatment process of the irradiation type | |
| JPS5939031A (en) | Method of reflowing phosphosilicate glass | |
| EP0124261B1 (en) | Process for producing monocrystalline layer on insulator | |
| JPS58223320A (en) | Diffusing method for impurity | |
| US4443493A (en) | Laser induced flow glass materials | |
| JP3777285B2 (en) | Saw wire | |
| US4549064A (en) | Laser treatment of silicon nitride | |
| JPH04167985A (en) | Method for cutting off wafer | |
| JPS5911622A (en) | Heating method | |
| JPH03253025A (en) | Substrate to be worked and anisotropic etching of silicon | |
| US4431900A (en) | Laser induced flow Ge-O based materials | |
| JPH04118190A (en) | Method for dividing wafer | |
| JPS59103346A (en) | Method of selectively heating insulator layer on semiconductor device | |
| JPS61116820A (en) | Annealing method for semiconductor | |
| GB2166379A (en) | Method of cutting metal by laser | |
| JP3528734B2 (en) | Lamp unit of light irradiation type heat treatment equipment | |
| JP6757953B2 (en) | Surface processing method, structure manufacturing method | |
| US4745258A (en) | Apparatus for laser-cutting metal interconnections in a semiconductor device | |
| JP2851280B2 (en) | Micro lens and manufacturing method thereof | |
| JP2003059855A (en) | Light irradiation-type heating treatment device | |
| JP4468643B2 (en) | Cutting method | |
| JPH0153577B2 (en) | ||
| JPS59121832A (en) | Method for heating semiconductor wafer by photo irradiation | |
| JPS61199638A (en) | Method for formation of insulating film |