JPS57130435A - Annealing method of matter by light beam - Google Patents
Annealing method of matter by light beamInfo
- Publication number
- JPS57130435A JPS57130435A JP1654481A JP1654481A JPS57130435A JP S57130435 A JPS57130435 A JP S57130435A JP 1654481 A JP1654481 A JP 1654481A JP 1654481 A JP1654481 A JP 1654481A JP S57130435 A JPS57130435 A JP S57130435A
- Authority
- JP
- Japan
- Prior art keywords
- matter
- vessel
- film
- scarcely
- irradiate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000137 annealing Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 abstract 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 abstract 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 abstract 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 abstract 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000002745 absorbent Effects 0.000 abstract 2
- 239000002250 absorbent Substances 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- -1 ethyldiamine Chemical compound 0.000 abstract 1
- 235000011187 glycerol Nutrition 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To unify a radiating beam when an oxide or a nitride adhered on the surface of a semiconductor is made to be irradiated with light beam to be annealed by a method wherein the beam is made to irradiate through a matter having the same refractive index with the oxide or the nitride and being sufficiently thicker than wave length of the beam and being scarcely absorbent of the beam. CONSTITUTION:When annealing is to be performed by irradiating laser beam 11 on an SiO2 or Si3N4 film 21 formed in the prescribed shape on a semiconductor substrate 20, a transparent vessel 40 is arranged on the substrate 20, and the beam 11 is made to irradiate passing through the prescribed matter filled up in the vessel. In this constitution, the matter having nearly the same refractive index with the film 21, being sufficiently thicker than wave length of the beam and being scarcely absorbent of the beam is selected as the matter to be filled up in the vessel 40. As the matter to be used for that purpose, any of ethylbenzene, ethyldiamine, benzene, toluene, glycerin, chloroform, etc., is selected. Accordingly uniform irradiation of the beam can be attained on the whole surface irrelevant to thickness of the film 21.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1654481A JPS57130435A (en) | 1981-02-05 | 1981-02-05 | Annealing method of matter by light beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1654481A JPS57130435A (en) | 1981-02-05 | 1981-02-05 | Annealing method of matter by light beam |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57130435A true JPS57130435A (en) | 1982-08-12 |
| JPS628011B2 JPS628011B2 (en) | 1987-02-20 |
Family
ID=11919200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1654481A Granted JPS57130435A (en) | 1981-02-05 | 1981-02-05 | Annealing method of matter by light beam |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57130435A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62149881A (en) * | 1985-12-24 | 1987-07-03 | Canon Inc | Apparatus for forming deposited film |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02130708U (en) * | 1989-03-31 | 1990-10-29 | ||
| JPH0340007U (en) * | 1989-08-28 | 1991-04-17 | ||
| JP5326183B2 (en) * | 2005-10-14 | 2013-10-30 | 澁谷工業株式会社 | Laser annealing method |
-
1981
- 1981-02-05 JP JP1654481A patent/JPS57130435A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62149881A (en) * | 1985-12-24 | 1987-07-03 | Canon Inc | Apparatus for forming deposited film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS628011B2 (en) | 1987-02-20 |
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